CN107452589A - Plasma processing apparatus and method of plasma processing - Google Patents
Plasma processing apparatus and method of plasma processing Download PDFInfo
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- CN107452589A CN107452589A CN201710327016.7A CN201710327016A CN107452589A CN 107452589 A CN107452589 A CN 107452589A CN 201710327016 A CN201710327016 A CN 201710327016A CN 107452589 A CN107452589 A CN 107452589A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
There is provided it is a kind of do not expand ion can distribution control ion energy, stably maintain in the environment of low pressure and low plasma density the plasma processing apparatus and method of plasma processing of plasma.Plasma processing apparatus (10) has process container (12), carrier group generating unit (62) and lower electrode (LE).Carrier group generating unit (62) generates carrier group, the carrier group includes the different multiple carrier waves of frequency in a frequency domain, and the amplitude waveform being alternately present in the time domain by the first peak fractions second peak fractions smaller than the absolute value of the first peak fractions with absolute value represents.Lower electrode (LE) is using carrier group come the generation plasma in process container (12).
Description
Technical field
Each aspect of the present invention and embodiment are related to a kind of plasma processing apparatus and method of plasma processing.
Background technology
In the past, it is known that a kind of that plasma is generated in process container using the RF power generated by high frequency electric source
Plasma processing apparatus.In addition, also a kind of skill that the different multiple RF powers of frequency are generated by multiple high frequency electric sources
Art.
Patent document 1：Japanese Unexamined Patent Publication 2012-15534 publications
The content of the invention
Problems to be solved by the invention
However, the situation of plasma is being generated in process container using the RF power generated by high frequency electric source
Under, the problem of being difficult to stably maintain plasma in the environment of low pressure and low plasma density be present.For example, in order to
Plasma is maintained in the environment of low pressure, considers to make the RF power increase generated by high frequency electric source.When RF power increase
When, the electric field increase in process container, therefore the ionization that plasma be present accelerates so as to which plasma density is excessively increased
Worry.
On the other hand, in order to suppress the excessive increase of plasma density, after plasma generates (igniting), consider
RF power is set to be reduced to the small value of value when generating (igniting) than plasma.However, following worry be present：Make high-frequency electrical
In the case that power is reduced, the electric field in process container declines, therefore can not ensure enough electric fields for maintaining plasma,
So as to plasma disappearance.At this point, in order to pass through conventional CCP (Capacitively Coupled Plasma：Electric capacity
Coupled plasma) type plasma device obtains high ion energy, it is necessary to make frequency be low frequency, but another side, ion can
Distribution significantly broadens, it is difficult to suppress ion can distribution control ion energy exactly.
The solution used to solve the problem
Disclosed plasma processing apparatus has in one embodiment：Process container；Carrier group generating unit, it is used
In generation carrier group, the carrier group includes the different multiple carrier waves of frequency, passes through the first peak fractions in the time domain in a frequency domain
Second peak fractions smaller than the absolute value of first peak fractions are alternately present with absolute value amplitude waveform represents；With
And plasma generating unit, it generates plasma using the carrier group in the process container.
The effect of invention
By a mode of disclosed plasma processing apparatus, following effect is played：, can by controlling waveform
By ion can absolute value and ion can distributed controll obtain it is narrow, so as in the environment of low pressure and low plasma density
Stably maintain plasma.
Brief description of the drawings
Fig. 1 is the figure for showing the plasma processing apparatus involved by first embodiment.
Fig. 2 is the block diagram for the configuration example for showing the carrier group generating unit in first embodiment.
Fig. 3 is the figure of one of the waveform for showing the carrier group in frequency domain.
Fig. 4 is the figure of one of the waveform for showing the carrier group in time domain.
Fig. 5 be for illustrate the amplitude of corresponding with the centre frequency fc of carrier group carrier wave with the center except carrier group
The figure of the ratio between the amplitude of carrier wave beyond the corresponding carrier waves of frequency fc.
Fig. 6 is to show the variation corresponding to the difference Δ P than Ao/Ac, the first peak fractions P1 and the second peak fractions P2
Figure.
Fig. 7 is to show the variation corresponding to the difference Δ P than Ao/Ac, the first peak fractions P1 and the second peak fractions P2
Figure.
Fig. 8 is to show the variation corresponding to the difference Δ P than Ao/Ac, the first peak fractions P1 and the second peak fractions P2
Figure.
Fig. 9 is the figure for the variation for showing the dutycycle corresponding to number N, the first peak fractions P1.
Figure 10 is the figure for the variation for showing the dutycycle corresponding to number N, the first peak fractions P1.
Figure 11 is to show the time interval corresponding to frequency interval Δ f, two the first peak fractions P1 adjacent to each other
The figure of Δ T variation.
Figure 12 is to show the time interval corresponding to frequency interval Δ f, two the first peak fractions P1 adjacent to each other
The figure of Δ T variation.
Figure 13 is the figure for illustrating the effect based on carrier group.
Figure 14 is the flow chart of the method for plasma processing involved by first embodiment.
Figure 15 is for illustrating the effect (plasma based on the plasma processing apparatus involved by first embodiment
Maintenance) figure.
Figure 16 is for illustrating effect (the ion energy based on the plasma processing apparatus involved by first embodiment
Distribution) figure.
Figure 17 is the figure for illustrating variation 1.
Figure 18 is the figure for illustrating variation 1.
Figure 19 is the figure for illustrating variation 2.
Figure 20 is the figure for illustrating variation 2.
Figure 21 is the figure for showing the plasma processing apparatus involved by second embodiment.
Figure 22 is the figure for showing the carrier group generating unit in second embodiment.
Figure 23 is the figure of one of the frequency of carrier wave for showing to be generated by each generative circuit.
Figure 24 is the figure of one of the synthesis for showing carrier wave.
Figure 25 is the figure of one of the waveform for the electric signal for showing the carrier group per N number of carrier wave.
Figure 26 is the figure of one of the waveform of the electric signal for the carrier group for showing each frequency interval Δ f.
Figure 27 is to show to make the amplitude of carrier wave there occurs the one of the waveform of the electric signal of the carrier group in the case of change
Figure.
Figure 28 A are to show the figure of specify one to carrier wave.
Figure 28 B are to show the figure of specify one to carrier wave.
Figure 28 C are to show the figure of specify one to carrier wave.
Figure 28 D are to show the figure of specify one to carrier wave.
Figure 29 is the figure of one for showing the electric power to lower electrode supply.
Figure 30 is to show one can occur in the case of carrying out the plasma etching of high depth-to-width ratio the problem of
Figure.
Figure 31 is the figure of one for showing the voltage to lower electrode supply.
Figure 32 is the figure of one of the contact hole for showing the high depth-to-width ratio that plasma etching goes out.
Figure 33 A are the figures for illustrating the relation between dutycycle and etch-rate.
Figure 33 B are the figures for illustrating the relation between dutycycle and power supply capacity.
Figure 34 is the figure of one for showing the voltage to lower electrode supply.
Figure 35 is the figure of one of the comparative result for showing etch-rate.
Description of reference numerals
10：Plasma processing apparatus；12：Process container；30：Upper electrode；62；Carrier group generating unit；71：Waveform number
According to generating unit；72：Quantization portion；73：Inverse fourier transform portion；78：Modulation portion；100：Carrier group generating unit；102：Directionality
Coupler；104：Adaptation；110：Generative circuit；111：Signal generator；112：Phase shifter；113：Power amplifier；115：
Export synthesizer；LE：Lower electrode；Cnt：Control unit.
Embodiment
Below, plasma processing apparatus disclosed in the present application and corona treatment are explained referring to the drawings
The embodiment of method.In addition, it is set in the drawings to same or equivalent part mark identical mark.In addition, not
Limit present embodiment disclosed invention.Can be to each embodiment rightly in the range of contradicting process content
It is combined.
(first embodiment)
Fig. 1 is the figure for showing the plasma processing apparatus involved by first embodiment.At plasma shown in Fig. 1
Reason device 10 is configured to use capacitance coupling plasma (CCP：Capacitively Coupled Plasma) plasma
Body processing unit.Plasma processing apparatus 10 possesses substantially cylindric process container 12.The inner wall surface of process container 12
Such as formed by the aluminium after being anodized.The safety ground of process container 12.
Substantially cylindric support 14 is provided with the bottom of process container 12.Support 14 is for example by insulating materials shape
Into.Support 14 extends in process container 12 from the bottom of process container 12 along vertical.In addition, in process container 12
It is provided with mounting table PD.Mounting table PD supported portion 14 supports.
Mounting table PD keeps wafer W in its upper surface.Mounting table PD has lower electrode LE and electrostatic chuck ESC.Bottom
Electrode LE includes the first plate 18a and the second plate 18b.First plate 18a and the second plate 18b such as metals as aluminium are formed, and are in
Substantially disc-shape.Second plate 18b is arranged on the first plate 18a, is electrically connected with the first plate 18a.
Electrostatic chuck ESC is provided with the second plate 18b.Electrostatic chuck ESC has as the electrode configuration of conducting film
Construction between a pair of insulating barriers or insulating trip.Dc source 22 is electrically connected via switch 23 with electrostatic chuck ESC electrode
Connect.Electrostatic chuck ESC adsorbs by means of the electrostatic force such as Coulomb force caused by the DC voltage from dc source 22
Wafer W.Thus, electrostatic chuck ESC can keep wafer W.
On the second plate 18b peripheral part focusing ring is configured with a manner of the edge and electrostatic chuck ESC that surround wafer W
FR.Focusing ring FR is set to improve the uniformity of etching.Focusing ring FR by the material of the film according to etch target and
The material suitably selected is formed, such as can be formed by quartz.
Refrigerant flow path 24 is internally provided with the second plate 18b.Refrigerant flow path 24 forms thermoregulation mechanism.From setting
Put the cooling unit in the outside of process container 12 and supply refrigerant to refrigerant flow path 24 via pipe arrangement 26a.It is fed into
The refrigerant of refrigerant flow path 24 returns to cooling unit via pipe arrangement 26b.Like this, in a manner of making refrigerant circulation to
Refrigerant flow path 24 supplies refrigerant.By controlling the temperature of the refrigerant, the wafer supported by electrostatic chuck ESC can be controlled
W temperature.
In addition, gas feed line road 28 is provided with plasma processing apparatus 10.Gas feed line road 28 is to electrostatic
Such as He gases of the heat-conducting gas from heat-conducting gas supply mechanism are supplied between chuck ESC upper surface and the wafer W back side.
In addition, plasma processing apparatus 10 possesses upper electrode 30.Upper electrode 30 is in mounting table PD top, with this
Mounting table PD is configured in opposite directions.Lower electrode LE and upper electrode 30 are arranged to substantially parallel to one another.In the upper electrode 30 with
The processing space S for carrying out corona treatment to wafer W is provided between portion electrode LE.
Upper electrode 30 is supported in the top of process container 12 via insulating properties shading member 32.In addition, top is electric
Pole 30 is connected with GND.In one embodiment, upper electrode 30 can be configured to the upper surface away from mounting table PD i.e. wafer
Put the distance variable in the vertical in face.Upper electrode 30 can include battery lead plate 34 and electrode support 36.Battery lead plate 34
Towards processing space S, the battery lead plate 34 is provided with multiple gas discharge hole 34a.The battery lead plate 34 is in one embodiment
Formed by silicon.
Electrode support 36 supports battery lead plate 34 in a manner of loading and unloading battery lead plate 34 freely, and the electrode support 36 for example can
Enough conductive materials as aluminium are formed.The electrode support 36 can have water-cooling structure.In electrode support 36
Portion is provided with gas diffusion chamber 36a.The multiple gas communication hole 36b connected with gas discharge hole 34a are from gas diffusion chamber 36a
Extend downwards.In addition, formed with for processing gas directional later exhaust diffuser casing 36a gas to be led on electrode support 36
Entrance 36c, gas supply pipe 38 is connected with gas introduction port 36c.
On gas supply pipe 38 gas source group 40 is connected with via valve group 42 and flow controller group 44.Gas source group
40 include fluorocarbon gas source, rare gas source and oxygen (O2) source of the gas these multiple gas sources.Fluorocarbon gas example
As being to include C4F6Gas and C4F8The gas of at least one of gas gas.In addition, rare gas is to include Ar gases, He
The gas of at least one of various rare gas gas as gas.
Valve group 42 includes multiple valves, and flow controller group 44 includes multiple flow controls as mass flow controller
Device.Multiple gas sources of gas source group 40 respectively via valve group 42 corresponding valve and flow controller group 44 corresponding flow
Controller and be connected with gas supply pipe 38.
In addition, in plasma processing apparatus 10, deposit is detachably provided with along the inwall of process container 12
Shielding part 46.Deposit shielding part 46 is also disposed on the periphery of support 14.Deposit shielding part 46 prevents from etching secondary product
(deposit) is attached to process container 12, can be by coating Y on aluminium2O3Deng ceramics and form.
Exhaustion plate 48 is provided between the bottom side of process container 12 and the side wall of support 14 and process container 12.Row
Gas plate 48 for example can be by coating Y on aluminium2O3Deng ceramics and form.In the lower section of the exhaustion plate 48 and process container
Exhaust outlet 12e is provided with 12.On exhaust outlet 12e exhaust apparatus 50 is connected with via blast pipe 52.Exhaust apparatus 50 has
There are the vavuum pumps such as turbomolecular pump, the space in process container 12 can be depressurized to desired vacuum.In addition, handling
The feeding that wafer W is provided with the side wall of container 12 sends out mouth 12g, and the feeding is sent out mouth 12g and can opened by gate valve 54
Close.
In addition, plasma processing apparatus 10 has carrier group generating unit 62, amplifier 64 and adaptation as shown in Figure 1
66。
Carrier group generating unit 62 generates carrier group.The carrier group generated by carrier group generating unit 62 includes frequency in a frequency domain
Different multiple carrier waves.In addition, the carrier group generated by carrier group generating unit 62 in the time domain by the first peak fractions with absolutely
Amplitude waveform that second peak fractions smaller than the absolute value of the first peak fractions to value are alternately present represents.On by carrier wave
The detailed content for the carrier group that group's generating unit 62 generates, is described below.
Carrier group generating unit 62 has Wave data generating unit 71, quantization portion 72, inverse fourier transform portion as shown in Figure 2
73、D(Digital：Numeral)/A (Analog：Simulation) converter section 74,75, LPF (Low Pass Filter：Low pass filter)
76th, 77 and modulation portion 78.In addition, Fig. 2 is the block diagram for the configuration example for showing the carrier group generating unit in first embodiment.
Wave data generating unit 71 generates Wave data.Wave data generating unit 71 for example obtains from input unit (not shown)
Take in the parameter (such as frequency, phase etc.) of generation Wave data, Wave data is generated using accessed parameter.And
And Wave data generating unit 71 exports generated Wave data to quantization portion 72.
Quantization portion 72 carries out quantization to the Wave data inputted from Wave data generating unit 71.Inverse fourier transform
Portion 73 carries out inverse fourier transform to having carried out quantized Wave data by quantization portion 72, thus by the same phase of Wave data
Component data (I datum：In-Phase component：In-phase component) and negative phase sequence component data (Q data：Quadrature
component：Quadrature component) separation.The I datum and Q data for the Wave data isolated by inverse fourier transform portion 73 are by D/A
Converter section 74,75 carries out D/A conversions, and modulation portion 78 is input to via LPF 76,77.
The reference carrier that modulation portion 78 differs 90 ° using the I datum and Q data of Wave data each other to phase is adjusted
System, thus generates above-mentioned carrier group.Specifically, modulation portion 78 has PLL (Phase Locked Loop：Phaselocked loop) shake
Swing device 81, phase shifter 82, multiplier 83,84 and adder 85.
PLL oscillators 81 generate reference carrier, and the reference carrier generated is output into phase shifter 82 and multiplier 83.Move
Phase device 82 makes 90 ° of the phase offset of the reference carrier inputted from PLL oscillators 81, the reference carrier after 90 ° by phase offset
It is output to multiplier 84.The I datum inputted from LPF 76 and the benchmark inputted from PLL oscillators 81 are transported ripple phase by multiplier 83
Multiply.Multiplier 84 will be multiplied from the Q data that LPF 77 is inputted with the reference carrier inputted from phase shifter 82.Adder 85 is by multiplication
The multiplied result of device 83 is added with the multiplied result of multiplier 84, thus generates carrier group.
Here, illustrate one of the generation processing of the carrier group in carrier group generating unit 62 using numerical expression.By waveform number
The Wave data generated according to generating unit 71 is in advance by digitized symbol rank.Certain moment t Wave data X (t) is by with following formula
(1) represent.
X (t)=A (t) cos (ω t+ θ0)…(1)
Wherein, A (t)：Certain moment t amplitude, ω：Angular speed, θ0：Initial phase.
Above-mentioned formula (1) is deployed using addition theorem, exported with following formula (2).
X (t)=A (t) cos ω tcos θ0-A(t)sinωt·sinθ0…(2)
Wave data X (t) I datum I (t) with following formula (3) by being shown.In addition, Wave data X (t) Q data Q (t) by
Shown with following formula (4).
I (t)=A (t) cos θ 0 ... (3)
Q (t)=A (t) sin θs0…(4)
By above-mentioned formula (2)~(4), export with following formula (5).
X (t)=I (t) cos ω t-Q (t) sin ω t ... (5)
Above-mentioned formula (5) means that all Wave data X (t) can be represented by I datum I (t) and Q data Q (t).
In carrier group generating unit 62, quantization is carried out to Wave data X (t) by quantization portion 72 first, then, by Fu
Vertical leaf inverse transformation portion 73 carries out inverse fourier transform, thus separates I datum I (t) with Q data Q (t).Then, changed by D/A
The each I datum I (t) in 74,75 pairs of portion and each Q data Q (t) carry out the backward LPF for only passing through low frequency component of D/A conversions respectively
76th, 77 input.On the other hand, based on the reference carrier that the centre frequency (fc) is vibrated by the PLL oscillators 81 of modulation portion 78
(such as microwave) generation phase differs 90 ° of two reference carrier cos ω t ,-sin ω t each other.Then, in modulation portion 78,
Using the I datum I (t) that is exported from LPF 76,77 and Q data Q (t) phase is differed each other 90 ° reference carrier cos ω t ,-
Sin ω t are modulated, thus generation conveyance wave group.That is, I datum I (t) is multiplied by reference carrier (cos ω t), make Q data Q
(t) reference carrier (- sin ω t) is multiplied by, the two multiplied results are added, thus generate carrier group.
Return to Fig. 1 explanation.Amplifier 64 amplifies the carrier group generated by carrier group generating unit 62, via adaptation
66 and to lower electrode LE supply amplification after carrier group.Adaptation 66 makes the output impedance and load side of carrier group generating unit 62
The input resistant matching of (lower electrode LE Side).In addition, amplifier 64 needs to be linear high amplifier so that amplitude can be occurred
The waveform of change amplifies without distortion.In addition, for amplifier 64 and adaptation 66, it is expected that frequency is special in the frequency band of the present invention
Property good and phase distortion it is few.
In the plasma processing apparatus 10 so formed, from the gas discharge hole of the battery lead plate 34 of upper electrode 30
34a imports gas into process container 12.In addition, supplied via amplifier 64 and adaptation 66 to lower electrode LE by carrier wave
The carrier group that group's generating unit 62 generates.When supplying carrier group to lower electrode LE, lower electrode LE and upper electrode 30 it
Between processing space S in form electric field.The gas being imported into process container 12 passes through the electric field quilt that is formed in space S is handled
It is plasmarized, generate plasma in space S is handled.Now, lower electrode LE is used as using carrier group to hold in processing
The plasma generating unit of generation plasma plays function in device 12.
In addition, in one embodiment, plasma processing apparatus 10 can also possess control unit Cnt.The control unit
Cnt is the computer for possessing processor, storage part, input unit, display device etc., controls each of plasma processing apparatus 10
Portion.In control unit Cnt, operator can be instructed for managing plasma processing unit 10 using input unit
Input operation etc., in addition, by display device, can visually show the working condition of plasma processing apparatus 10.
Also, in control unit Cnt storage part, preserve for processor to the various places that are performed in plasma processing apparatus 10
Manage the control program that is controlled and for making each portion of plasma processing apparatus 10 perform processing according to treatment conditions
Program, handle processing procedure.
Then, the detailed content of carrier group generated by carrier group generating unit 62 is illustrated using Fig. 3~Figure 12.Fig. 3 is
The figure of one of the waveform of the carrier group in frequency domain is shown.Fig. 4 is the figure of one of the waveform for showing the carrier group in time domain.This
Outside, in figure 3, transverse axis represents frequency, and the longitudinal axis represents amplitude.In addition, in Fig. 4, transverse axis represents the time, the longitudinal axis represents amplitude.
In addition, in figs. 3 and 4, it is set to amplitude and is normalized.
Carrier group shown in Fig. 3 includes the different multiple carrier wave f1~f7 of frequency in a frequency domain.Multiple carrier wave f1~f7's
Number N is 7.In addition, the centre frequency fc of carrier group is set as 13.56MHz.In addition, multiple carrier wave f1~f7 amplitude phase
Together.In addition, multiple carrier wave f1~f7 frequency interval Δ f is 10kHz, on carrier wave f1~f7 initial phase, it is set as
90 ° are differed between adjacent carrier wave successively.The frequency band of the carrier group is 13.56MHz ± 30kHz (bandwidth 60kHz).Shown in Fig. 3
The waveform of carrier group be converted into the waveform shown in Fig. 4 in the time domain.That is, the carrier group shown in Fig. 4 passes through in the time domain
The amplitude that the one peak fractions P1 and absolute value second peak fractions P2 smaller than the first peak fractions P1 absolute value is alternately present
Waveform (hereinafter, appropriately referred to as " amplitude waveform ") represents.Hereinafter, the characteristic as amplitude waveform is said in the following order
It is bright：(1) first peak fractions P1 and the second peak fractions P2 difference Δ P, (2) first peak fractions P1 time of occurrence T1 is relative
In the ratio between the first peak fractions P1 time of occurrence T1 and the second peak fractions P2 time of occurrence T2 summation and (3) that
This two adjacent the first peak fractions P1 time interval Δ T.
The difference Δ P of the first peak fractions P1 and the second peak fractions P2 in amplitude waveform are according in multiple carrier wave f1~f7
The centre frequency fc with carrier group corresponding to carrier wave amplitude with carrier wave corresponding with the centre frequency fc except carrier group with
The ratio between outer amplitude of carrier wave and change.
Fig. 5 be for illustrate the amplitude of corresponding with the centre frequency fc of carrier group carrier wave with the center except carrier group
The figure of the ratio between the amplitude of carrier wave beyond the corresponding carrier waves of frequency fc.As shown in figure 5, the centre frequency with carrier group can be made
The amplitude Ac of carrier wave f4 corresponding to fc is the same as the amplitude with the carrier wave in addition to the corresponding carrier wave f4 of the centre frequency fc of carrier group
The ratio between value Ao Ao/Ac is changed.Such as make to be used to generate in Wave data generating unit 71 using input unit (not shown)
The parameter of Wave data changes, and thus makes to change than Ao/Ac.
Fig. 6~Fig. 8 is to show the difference Δ P corresponding to than Ao/Ac, the first peak fractions P1 and the second peak fractions P2
The figure of variation.In fig. 6, it is illustrated that than Ao/Ac be 0.05 in the case of the first peak fractions P1 and the second peak fractions P2 it
Poor Δ P.In FIG. 7, it is shown that than Ao/Ac be 0.1 in the case of the first peak fractions P1 and the second peak fractions P2 difference Δ
P.In fig. 8 it is shown that than Ao/Ac be 0.2 in the case of the first peak fractions P1 and the second peak fractions P2 difference Δ P.This
Outside, in fig. 4 it is shown that than Ao/Ac be 1 in the case of the first peak fractions P1 and the second peak fractions P2 difference Δ P.Such as figure
It is bigger than Ao/Ac shown in 4 and Fig. 6~Fig. 8, the difference Δ P of the first peak fractions P1 and the second peak fractions P2 in amplitude waveform
It is bigger.
In addition, appearance of the time of occurrence T1 of the first peak fractions P1 in amplitude waveform relative to the first peak fractions P1
The ratio between time T1 and the second peak fractions P2 time of occurrence T2 summation becomes according to multiple carrier wave f1~f7 number N
It is dynamic.Hereinafter, by the time of occurrence T1 of the first peak fractions P1 in amplitude waveform relative to the first peak fractions P1 appearance when
Between the ratio between T1 and the second peak fractions P2 time of occurrence T2 summation be referred to as " the first peak fractions P1 dutycycle ".Such as profit
The parameter for being used to generate Wave data in Wave data generating unit 71 is changed with input unit (not shown), thus
Change multiple carrier wave f1~f7 number N.
Fig. 9 and Figure 10 is the figure for the variation for showing the dutycycle corresponding to number N, the first peak fractions P1.In Fig. 9
In, show number N be 3 in the case of the first peak fractions P1 time of occurrence T1 and the second peak fractions P2 time of occurrence
T2.In fig. 10, it is illustrated that number N be 13 in the case of the first peak fractions P1 time of occurrence T1 and the second peak fractions P2
Time of occurrence T2.In addition, in fig. 4 it is shown that number N be 7 in the case of the first peak fractions P1 time of occurrence T1 and
Second peak fractions P2 time of occurrence T2.As shown in Fig. 4, Fig. 9 and Figure 10, number N is more, the first peak value in amplitude waveform
Part P1 time of occurrence T1 is fewer, and number N is more, and the time of occurrence T2 of the second peak fractions P2 in amplitude waveform is more.
That is, number N is more, and the first peak fractions P1 dutycycle is smaller.
In addition, the time interval Δ T of two the first peak fractions P1 adjacent to each other in amplitude waveform is according to multiple loads
Ripple f1~f7 frequency interval Δ f and change.Such as make Wave data generating unit 71 using input unit (not shown)
In be used for generate the parameter modification of Wave data, thus change multiple carrier wave f1~f7 frequency interval Δ f.
Figure 11 and Figure 12 be show corresponding to frequency interval Δ f, two the first peak fractions P1 adjacent to each other when
Between interval delta T variation figure.In fig. 11, show frequency interval Δ f be 50kHz in the case of adjacent to each other two the
One peak fractions P1 time interval Δ T.In fig. 12, it is adjacent to each other in the case of showing frequency interval Δ f for 100kHz
Two the first peak fractions P1 time interval Δ T.In addition, in fig. 4 it is shown that in the case that frequency interval Δ f is 10kHz
Two the first peak fractions P1 adjacent to each other time interval Δ T.As shown in Fig. 4, Figure 11 and Figure 12, multiple carrier wave f1~
F7 frequency interval Δ f is bigger, and the time interval Δ T of two the first peak fractions P1 adjacent to each other in amplitude waveform is got over
It is small.
Figure 13 is the figure for illustrating the effect of carrier group.In the amplitude wave of the carrier group generated by carrier group generating unit 62
In shape, as shown in figure 13, the first peak fractions P1 and the absolute value second peak value portion smaller than the first peak fractions P1 absolute value
P2 is divided to be alternately present.Moreover, the appearance based on the first peak fractions P1, forms " plasma igniting peak in process container 12
It is worth electric field ".So-called " plasma igniting peak value electric field " is the electric field for producing the electric discharge needed for plasma generation (igniting).When
When " plasma igniting peak value electric field " is formed in the process container 12, the ionization of the plasma based on electric discharge accelerates, wait from
Daughter density moment increases.On the other hand, the appearance based on the second peak fractions P2, " plasma is formed in process container 12
Body maintains electric field ".So-called " plasma maintenance electric field " refers to produce the electric field for maintaining the electric discharge needed for plasma, with " etc.
Gas ions igniting peak value electric field " is compared, and absolute value is small.When forming " plasma maintenance electric field " in process container 12, base
It is suppressed in the ionization of the plasma of electric discharge, so as to suppress the increase of plasma density.Generated by carrier group generating unit 62
Carrier group make to be alternatively formed " plasma igniting peak value electric field " and " plasma maintenance electric field " in process container 12.By
This, avoids the excessively increased situation of plasma density and ensures enough electric fields for maintaining plasma.
Then, using Figure 14 come illustrate to have used the grade of the plasma processing apparatus 10 involved by first embodiment from
Daughter processing method.Figure 14 is the flow chart of the method for plasma processing involved by first embodiment.
As shown in figure 14, the carrier group generating unit 62 of plasma processing apparatus 10 generates carrier group (step S101).Carry
The carrier group that wave group generating unit 62 is generated includes the different multiple carrier waves of frequency in a frequency domain.In addition, carrier group generating unit 62
The carrier group generated in the time domain by the first peak fractions and absolute value it is smaller than the absolute value of the first peak fractions second
Amplitude waveform that peak fractions are alternately present represents.
Lower electrode LE is using carrier group come the generation plasma (step S102) in process container 12.
Plasma processing apparatus 10 (step S103 is negative) in the case where continuing with, makes processing return to step
S101, (step S103 is affirmative), end processing in the case where end is handled.
Plasma processing apparatus 10 according to involved by first embodiment, generation pass through the first peak value portion in the time domain
The carrier group for dividing the amplitude waveform being alternately present with the second peak fractions to represent, using the carrier group come in process container 12
Generate plasma.Therefore, it is possible to make to be alternatively formed " plasma igniting peak value electric field " and " plasma in process container 12
Body maintains electric field ", thus avoid the excessively increased situation of plasma density and ensure for maintaining the enough of plasma
Electric field.As a result, it can stably maintain plasma under low pressure and low plasma density.Also, it can also improve
The controlling of distribution to ion energy.
Then, the effect based on the plasma processing apparatus 10 involved by first embodiment is illustrated using Figure 15
(maintenance of plasma).Figure 15 is for illustrating the effect based on the plasma processing apparatus involved by first embodiment
The figure of (maintenance of plasma).In fig.15, transverse axis represents pressure [Torr], and the longitudinal axis represents plasma density [ions/
cm3].In addition, in fig.15, region 501 is represented in the conventional of the RF power generated using having used by high frequency electric source
The region of plasma is maintained in the case of plasma processing apparatus.In addition, in fig.15, region 502 represents using
The region of plasma is maintained in the case of plasma processing apparatus 10 involved by first embodiment.
As shown in figure 15, only it is more than 5 [mTorr] and plasma in pressure in conventional plasma processing apparatus
Volume density is 1E+10 [ions/cm3] more than in the environment of maintain plasma.On the other hand, involved by first embodiment
Plasma processing apparatus 10 in, be less than 5 [mTorr] and plasma density in pressure and be less than 1E+10 [ions/cm3]
Also plasma is maintained under environment.That is, in the plasma processing apparatus 10 involved by first embodiment, compared to
Past plasma processing apparatus, it can stably maintain plasma under low pressure and low plasma density.
Then, the effect based on the plasma processing apparatus 10 involved by first embodiment is illustrated using Figure 16
(distribution of ion energy).Figure 16 is for illustrating the effect based on the plasma processing apparatus involved by first embodiment
The figure of (distribution of ion energy).In figure 16, transverse axis represents the energy (hereinafter referred to as " ion to ion incident wafer W
Can "), the longitudinal axis represents the probability of occurrence to ion incident wafer W.In addition, in figure 16, curve map 511 shows to utilize use
Ion in the case of the conventional plasma processing apparatus of the RF power generated by high frequency electric source can distribution.Separately
Outside, in figure 16, in the case that curve map 512 shows make use of the plasma processing apparatus 10 involved by first embodiment
Ion can distribution.
As shown in figure 16, in conventional plasma processing apparatus, the peak value of the probability of occurrence of ion is dispersed in ion
Near the minimum value and maximum of energy.On the other hand, in the plasma processing apparatus 10 involved by first embodiment, from
The peak value of the probability of occurrence of son is concentrated near specific ion energy.That is, at the plasma involved by first embodiment
Manage in device 10, compared to conventional plasma processing apparatus, it is possible to increase the controlling of the distribution to ion energy.
More than, the plasma processing apparatus 10 according to involved by first embodiment, generation passes through first in the time domain
The amplitude waveform that peak fractions and the second peak fractions are alternately present is held using the carrier group in processing come the carrier group that represents
Generation plasma in device 12.Therefore, it is possible to make to be alternatively formed in process container 12 " plasma igniting peak value electric field " with
" plasma maintenance electric field ", thus avoid the excessively increased situation of plasma density and ensure for maintaining plasma
Enough electric fields.As a result, it can stably maintain plasma under low pressure and low plasma density.Also, also can
Enough controllings for improving the distribution to ion energy.
In addition, public technology is not limited to above-mentioned embodiment, can be carried out in the range of the purport of the present invention
Various modifications.
In the above-described embodiment, show that Wave data generating unit 71 generates a Wave data and the basis of modulation portion 78
The example of one Wave data generation carrier group, but public technology is not limited to this.For example, it is also possible to as shown in figure 17, ripple
Graphic data generating unit 71 generates first waveform data in the very first time, the second time generation after the first time and first wave
The second different Wave data of graphic data.In this case, modulation portion 78 is as shown in figure 18 in the very first time according to first waveform
Data generate carrier group, and carrier group is generated according to the second Wave data in the second time.In Figure 18 example, according to first wave
The carrier group that graphic data is generated passes through the first peak fractions P1 and absolute value of the absolute value than the first peak fractions in the time domain
Amplitude waveform that the second small P1 peak fractions P2 is alternately present represents.Thus, in the very first time, based on the first peak fractions
P1 appearance, " plasma igniting peak value electric field " is formed in the process container 12, based on the second peak fractions P2 appearance,
" plasma maintenance electric field " is formed in process container 12.On the other hand, the carrier group generated according to the second Wave data exists
Handed in time domain by the 4th the 3rd peak fractions P3 and absolute value smaller than the 3rd peak fractions P3 absolute value peak fractions P4
Represented for the amplitude waveform of appearance.3rd peak fractions P3 absolute value is bigger than the first peak fractions P1 absolute value.Thus,
In the second time, based on the 3rd peak fractions P3 appearance, lower electrode LE, which is applied, makes what is accelerated to ion incident wafer W
Electric power, i.e. " ion acceleration electric power ".In addition, Figure 17 and Figure 18 are the figures for illustrating variation 1.
In addition, for example, Wave data generating unit 71 can also generate by first waveform data and with first as shown in figure 19
The synthetic waveform data that the second different Wave data of Wave data is synthesized into are used as Wave data.In this case,
Modulation portion 78 generates the first peak fractions P1 with absolute value than the first peak fractions P1 according to synthetic waveform data as shown in figure 20
Small the second carrier group that peak fractions P2 is alternately present and the 3rd peak fractions P3 occurs at any time of absolute value.3rd
Peak fractions P3 absolute value is bigger than the first peak fractions P1 absolute value.In Figure 20 example, based on the first peak fractions
P1 appearance, " plasma igniting peak value electric field " is formed in the process container 12, based on the second peak fractions P2 appearance,
" plasma maintenance electric field " is formed in process container 12.In addition, the appearance based on the 3rd peak fractions P3, to lower electrode LE
Apply electric power, i.e. " the ion acceleration electric power " for making to accelerate to ion incident wafer W.In addition, Figure 19 and Figure 20 are to be used to illustrate
The figure of variation 2.
In addition, in the above-described embodiment, show the load generated to lower electrode LE supplies by carrier group generating unit 62
The example of wave group, but public technology is not limited to this.For example, carrier group can also supply to upper electrode 30.When to top
When electrode 30 supplies carrier group, electric field is formed in the processing space S between lower electrode LE and upper electrode 30.It is imported into place
Gas in reason container 12 is in plasma by handling the electric field formed in space S, so as to raw in processing Kong Inter S
Into plasma.Now, upper electrode 30 is as the plasma for generating plasma in process container 12 using carrier group
Body generating unit plays function.
(second embodiment)
Then, second embodiment is illustrated.Figure 21 is shown at the plasma involved by second embodiment
Manage the figure of device.Plasma processing apparatus 10 involved by second embodiment is and the first embodiment institute shown in Fig. 1
The same structure of plasma processing apparatus 10 being related to, therefore identical part mark identical is marked and omitted
It is bright, mainly different parts is illustrated.
In the plasma processing apparatus 10 involved by second embodiment, instead of carrier group generating unit 62, amplifier
64 and adaptation 66, and there is carrier group generating unit 100, directional coupler 102 and adaptation 104.
Carrier group generating unit 100 generates carrier group.For example, carrier group generating unit 100 is generated the different multiple electricity of frequency
The carrier group that signal is synthesized into.The carrier group generated by carrier group generating unit 100 includes different more of frequency in a frequency domain
Individual carrier wave.In addition, the carrier group generated by carrier group generating unit 100 is in the time domain by the first peak fractions and absolute value than the
Amplitude waveform that the second small peak fractions of the absolute values of one peak fractions are alternately present represents.On by carrier group generating unit
The detailed content of the carrier group of 100 generations, is described below.
Figure 22 is the figure for showing the carrier group generating unit in second embodiment.As shown in figure 22, in carrier group generating unit
The multiple generative circuits 110 for the electric signal for generating each carrier wave are provided with 100.For example, in Figure 22 example, in carrier group
Seven generative circuits 110 are set side by side with generating unit 100.In addition, the number of generative circuit 110 is not limited to seven.Carrier wave
Group's generating unit 100 generates carrier group based on the control from control unit Cnt.For example, carrier group generating unit 100 is from control unit
Cnt obtains the parameter for the specified carrier wave generated by each generative circuit 110 (for example, the magnifying power of frequency, phase, amplitude
Deng), generate carrier group using the parameter got.
Generative circuit 110 has signal generator 111, phase shifter 112 and power amplifier 113 respectively.Signal occurs
Device 111 is connected with phase shifter 112.In addition, signal generator 111 is grounded.Signal generator 111 generates the telecommunications of carrier wave respectively
Number.For example, signal generator 111 generates the signal for the frequency specified by parameter respectively.Signal generator 111 is to phase shifter 112
Export the electric signal of generation.Phase shifter 112 is connected with power amplifier 113.Phase shifter 112 makes the electric signal of the carrier wave of input
Phase shifts.For example, phase shifter 112 makes the backward work(of amount that the phase offset of the electric signal of the carrier wave of input is specified by parameter
Rate amplifier 113 exports.Power amplifier 113 with by the magnifying power that parameter is specified will the carrier wave of input electric signal amplification after it is defeated
Go out.
Carrier group generating unit 100 has output synthesizer 115.The power amplifier 113 of each generative circuit 110 closes with output
Grow up to be a useful person 115 connections.Output synthesizer 115 is transfused to the electric signal of the carrier wave after being amplified by each power amplifier 113.Output synthesis
Device 115 synthesizes the electric signal of the carrier wave after being amplified by each power amplifier 113 to generate carrier group.Export synthesizer 115 to
The electric signal of the carrier group of the output generation of directional coupler 102.
Directional coupler 102 exports the electric signal of the carrier group inputted to adaptation 104.Alternatively, it is also possible to be, side
Tropism coupler 102 connects test section (not shown) to utilize test section to flowing to adaptation 104 from directional coupler 102
The level of electric signal, waveform are detected, and testing result is notified to control unit Cnt.Can also be that control unit Cnt is based on being led to
The testing result known is come to for specifying the parameter of the carrier wave generated by each generative circuit 110 to be controlled such that carrier group turns into
Desired state.
The electric signal for the carrier group that adaptation 104 has inputted to lower electrode LE supplies.Adaptation 104 generates to carrier group
The input impedance of the output impedance and load side (lower electrode LE sides) of the side of portion 100 is matched.Preferably, adaptation 104
It is the adaptation of the corresponding broadband type of frequency band of the carrier group with passing through.In addition, power amplifier 113 needs to be linear high
Amplifier is amplified without distortion with the waveform that amplitude can change.In addition, for phase shifter 112, directional coupler 102
And adaptation 104, it is expected that frequency characteristic is good in the frequency band of the present invention and phase distortion is few.
Here, one that the generation of the carrier group in explanation carrier group generating unit 100 is handled.In carrier group generating unit 100
In, the different carrier wave of frequency is generated with defined frequency interval Δ f using each generative circuit 110.Figure 23 is shown by each generation
The figure of one of the frequency of the carrier wave of circuit evolving.In fig 23, transverse axis represents frequency, and the longitudinal axis represents amplitude.Amplitude represents logical
Cross the power of the electric power of carrier wave supply.In fig 23, centre frequency fc is set to 13.56MHz, shows the seven of frequency interval Δ f
Individual carrier wave f1~f7 frequency.Each generative circuit 110 generates carrier wave f1~f7 of each frequency shown in Figure 23.In addition, generation
The number N of carrier wave is not limited to 7, then can be any number as long as below the number of generative circuit 110 and to be multiple.Close
The change of carrier group, is described below caused by being changed in the number N and frequency interval Δ f for making carrier wave.
Each phase shifter 112 makes the phase of the electric signal of the carrier wave of input shift.For example, each phase shifter 112 makes input
Carrier wave electric signal relative to the electric signal of the carrier wave of adjacent frequency offset in order as defined in after the cycle to power amplification
Device 113 exports.Preferably, it is specified that be comparable to will be all obtained from phase corresponding with a cycle divided by integer cycle
The phase of phase.In the present embodiment, the cycle of skew is for example set to 90 °.Each phase shifter 112 makes the electric signal of the carrier wave of input
Exported relative to after the adjacent 90 ° of phases of carrier shift of the small side of frequency to power amplifier 113.For example, by carrier wave
In the case that f1 phase is set to 0 °, the phase offset for making carrier wave f2 is 90 °.The phase offset for making carrier wave f3 is 180 °.Make load
Ripple f4 phase offset is 270 °.The phase offset for making carrier wave f5 is 0 °.The phase offset for making carrier wave f6 is 90 °.Make carrier wave f7
Phase offset be 0 °.In addition it is also possible to it is to occur by being amplified by power amplifier 113 and the phase of electric signal
In the case of skew, each phase shifter 112 takes the offset of the phase in power amplifier 113 into account, by power amplification
Device 113 is amplified laggard line displacement so that offset turns into the defined cycle.For example, it is also possible to it is, by power amplifier 113
In the offset of phase control unit Cnt storage part is pre-stored within as control information, control unit Cnt is believed using correction
Cease to specify the corresponding phase of the offset after offset with subtracting the phase in power amplifier 113 to each phase shifter 112
Skew, dephased using each phase shifter 112 corresponding with subtracting the offset after the offset in power amplifier 113
Amount.
Output synthesizer 115 synthesizes the electric signal of the carrier wave after being amplified by each power amplifier 113.Figure 24 is to show to carry
The figure of one of the synthesis of ripple.In addition, in fig. 24, in order that explanation is simple and shows to close three carrier waves 120,121,122
Into situation.In fig. 24, transverse axis represents the time, and the longitudinal axis represents amplitude.In fig. 24, frequency interval Δ f frequency is shown not
Same carrier wave 120,121,122 and the composite wave 130 for being synthesized into carrier wave 120,121,122.Due to carrier wave 120,121,
122 resonance, amplitude at the overlapping part of peak value of the composite wave 130 on the equidirectional of the amplitude of carrier wave 120,121,122
Increase.For example, the amplitude of the amplitude ratio carrier wave 120,121,122 at peak fractions 131 of composite wave 130 is big.In addition, composite wave
130 at the small partly overlapping part of the amplitude of carrier wave 120,121,122, amplitude is in a different direction at overlapping part
Amplitude reduces.For example, the amplitude of the amplitude ratio carrier wave 120,121,122 at peak fractions 132 of composite wave 130 is small.
The number N of the carrier wave of synthesis is more, and the peak-peak of composite wave 130 is bigger.In addition, by making frequency interval Δ f
Change to make the cycle of the appearance peak-peak of composite wave 130 change.
Here, the change to the waveform of the electric signal of the carrier group based on the carrier wave to be synthesized illustrates.First,
Change to the waveform of the electric signal of carrier group caused by the number N of carrier wave change illustrates.Figure 25 is to show every N
The figure of one of the waveform of the electric signal of the carrier group of individual carrier wave.Figure 25 example shows centre frequency fc being set to
13.56MHz, frequency interval Δ f is set to 100KHz, the situation for changing the number N of carrier wave.Figure 25 bottom is that show will be individual
Count frequency, the curve map of amplitude of each carrier wave f in the case that N is set to 1 (CW), 3,5,7,13.Song on Figure 25 bottom
Line chart, transverse axis represent frequency, and the longitudinal axis represents amplitude.In addition, each carrier wave f frequency, phase is shown in the bottom of each curve map.Separately
Outside, shown the waveform of the electric signal of the carrier groups being synthesized into of the carrier wave f shown in bottom on Figure 25 top.On Figure 25
Top curve map, transverse axis represent the time, the longitudinal axis represent amplitude.
Number N is that 1 (CW) waveform is frequency fc carrier wave, therefore without generation resonance.On the other hand, number N is
3rd, 5,7,13 waveform occurs the big peak fractions of amplitude and the small peak fractions of amplitude due to the resonance of carrier wave in the time domain.
In addition, the cycle that the big peak value of amplitude occurs is the cycle with frequency interval Δ f identicals 100KHz.
Then, the change to the waveform of the electric signal of carrier group caused by the change as frequency interval Δ f illustrates.Figure
26 be the figure of one of the waveform of the electric signal for the carrier group for showing each frequency interval Δ f.Figure 26 example is shown center
Frequency fc is set to 13.56MHz, carrier wave f is set to seven (f1~f7), the feelings for changing carrier wave f1~f7 frequency interval Δ f
Condition.Figure 26 bottom is in the case of showing carrier wave f1~f7 frequency interval Δ f being set to 50KHz, 100KHz, 500KHz
Carrier wave f1~f7 frequency, the curve map of amplitude.On the curve map of Figure 26 bottom, transverse axis represents frequency, and the longitudinal axis represents to shake
Width.In addition, each carrier wave f frequency, phase is shown in the bottom of each curve map.In addition, show to set centre frequency fc in CW
For the amplitude of 13.56MHz carrier wave.In addition, show carrier wave f1~f7 shown in bottom being synthesized on Figure 26 top
Carrier group electric signal waveform.On the curve map on Figure 26 top, transverse axis represents the time, and the longitudinal axis represents amplitude.
CW waveform is frequency fc carrier wave, therefore without generation resonance.On the other hand, frequency interval Δ f is set to
50KHz, 100KHz, 500KHz waveform occur the big peak fractions of amplitude in the time domain due to the resonance of carrier wave and amplitude is small
Peak fractions.In addition, the cycle that the big peak value of amplitude occurs is and the frequency interval Δ f identical cycles.
Then, the change to the waveform of the electric signal of carrier group caused by the change as the amplitude of carrier wave illustrates.Figure
27 be to show to make the amplitude of carrier wave there occurs the figure of the one of the waveform of the electric signal of the carrier group in the case of change.Figure 27's
Example shows centre frequency fc being set to 13.56MHz, frequency interval Δ f is set into 100KHz, carrier wave is set to seven f1~f7
And the feelings for making carrier wave f1~f3, f5~f7 amplitude be changed relative to the amplitude of the carrier wave f4 as centre frequency fc
Condition.On the curve map on Figure 27 top, transverse axis represents frequency, and the longitudinal axis represents amplitude.Shown in Figure 27 bottom by relative to
Carrier wave f1~f3, the f5~f7 amplitude of carrier wave f4 amplitude are set to X=0,0.2 (20%), 0.5 (50%), 0.8 (80%), 1
(100%) by the waveform of the electric signal of carrier wave f1~f7 carrier groups being synthesized into.On the curve map of Figure 27 bottom,
Transverse axis represents the time, and the longitudinal axis represents amplitude.
X=0 (CW) waveform is frequency fc carrier wave, therefore without generation resonance.On the other hand, X=0.2,0.5,
0.8 waveform occurs the big peak fractions of amplitude and the small peak fractions of amplitude due to the resonance of carrier wave in the time domain.In addition,
X is bigger, and the difference of the amplitude between the big peak fractions of amplitude and the small peak fractions of amplitude is bigger.In addition, the ripple on X=1
Shape, because carrier wave f1~f7 is identical amplitude, therefore it is the waveform same with Figure 26 N=7.
So, the waveform of the electric signal of carrier group is changed by the carrier wave to be synthesized.Control unit Cnt can
By controlling the parameter for designated carrier set to carrier group generating unit 100, generated to change in carrier group generating unit 100
The number N of the generative circuit 110 of carrier wave, the frequency of the carrier wave generated by each generative circuit 110, phase in phase shifter 112
The magnifying power of offset, carrier wave in power amplifier 113, so as to change the waveform of carrier group.Figure 28 A~Figure 28 D are to show
To the figure of specify one of carrier wave.In addition, 13 generation electricity in carrier group generating unit 100 are shown in Figure 28 A~Figure 28 D
The condition of the carrier wave f1~f13 generated by each generative circuit 110 in the case that road 110 is arranged side by side.Figure 28 A are shown centre frequency
Fc is set to 13.56MHz, number N is set to 13, frequency interval Δ f is set to 100KHz in the case of carrier wave f1~f13 bar
Part.Figure 28 B show the feelings that centre frequency fc is set into 13.56MHz, number N is set to 7, frequency interval Δ f is set to 10KHz
The condition of carrier wave f1~f13 under condition.Figure 28 C show centre frequency fc being set to 13.56MHz, number N are set to 13, by frequently
Rate interval delta f be set to 10KHz in the case of carrier wave f1~f13 condition.Figure 28 D show centre frequency fc being set to
13.56MHz, number N is set to 10, frequency interval Δ f is set to 10KHz in the case of carrier wave f1~f13 condition." connect
On/off is opened " represent by generate carrier wave generative circuit 110 be set to generate carrier wave on-state still will generate carrier wave generation
Circuit 110 is set to not generate the off-state of carrier wave." frequency [MHz] " represents the frequency of the carrier wave of generation." initial phase [°] "
Represent the phase that make carrier shift." relative power " represents the relative power of carrier wave.Relative power is bigger, and carrier wave is more put
Greatly, amplitude is bigger.
Carrier group generating unit 100 passes through multiple carrier waves for will being correspondingly generated with the parameter set by control unit Cnt
Electric signal synthesizes and it is carried out resonance, to generate in the time domain by the first peak fractions and absolute value than the first peak fractions
The amplitude waveform that is alternately present of small the second peak fractions of absolute value come the carrier group that represents.
In the plasma processing apparatus 10 so formed, from the gas squit hole of the battery lead plate 34 of upper electrode 30
34a imports gas into process container 12.In addition, the carrier group generated by carrier group generating unit 100 is via directional coupler
102 and adaptation 104 and to lower electrode LE supply.When to lower electrode LE supply carrier group when, lower electrode LE with it is upper
Electric field is formed in processing space S between portion's electrode 30.The gas in process container 12 is imported into due to the shape in space S is handled
Into electric field and be in plasma, so as to generating plasma in space S is handled.Now, lower electrode LE is as use
Carrier group plays function come the plasma generating unit of generation plasma in process container 12.
So, the plasma processing apparatus 10 involved by second embodiment is generated in the time domain by the first peak value portion
The carrier group for dividing the amplitude waveform being alternately present with the second peak fractions to represent, using the carrier group come in process container 12
Generate plasma.Therefore, it is possible to be alternatively formed " plasma igniting peak value electric field " and " plasma in process container 12
Maintain electric field ", thus, it is possible to avoid the excessively increased state of affairs of plasma density and be able to ensure that for maintaining plasma
Enough electric fields.As a result, it can stably maintain plasma under low pressure and low plasma density.Further, it is possible to
The controlling of the distribution to ion is set to improve.
In addition, the carrier group generating unit 100 involved by second embodiment is different with defined frequency interval generation frequency
Carrier wave, make the different carrier wave of the frequency of generation phase respectively in order skew as defined in the cycle, by the frequency after phase offset
The different carrier wave synthesis of rate, thus generates carrier group.Thus, carrier group generating unit 100 can generate make the first peak fractions and
The amplitude of second peak fractions, the interval of the first peak fractions and the second peak fractions, the first peak fractions and next first
The various waveforms of the interval occurred of peak fractions change.
In addition, in recent years, in the plasma etching of the substrates such as wafer W, the depth being etched is required due to miniaturization
Spend the processing relative to the deep high-aspect-ratio of the width of opening.In the situation for the plasma etching for carrying out this high-aspect-ratio
Under, it is necessary to make the bottom of the contact hole of ion arrival high-aspect-ratio in plasma processing apparatus.In plasma processing apparatus
In, such as in the RF power that the fixation of amplitude shown in Figure 29 is continuously supplied from power supply to lower electrode LE carry out plasma
In the case of etching, if making to increase so that ion reaches the bottom of contact hole, sometimes to the electric power P0 that lower electrode LE is supplied
Problems with can occur.In addition, Figure 29 is the figure of one for showing the electric power to lower electrode supply.
Figure 30 be show carry out high-aspect-ratio plasma etching in the case of can occur the problem of the figure of one.
In the plasma etching of high-aspect-ratio, when making to increase to the voltage that lower electrode LE is supplied, further speed up ion,
Therefore the retrogressing that mask occurs be present.In addition, the discharge characteristic of the contact hole of high-aspect-ratio is deteriorated.Therefore, contacting
The bottom in hole is adhered to the reaction product of generation or is discharged even if reaction product and can also be divided by plasma again
Solve and adhere to again, thus occur to block (Clogging) at contact hole sometimes, attenuate (Necking).In addition, only have
Directive ion reaches the bottom of contact hole, therefore there is a situation where powered due to the electric charge of ion at the bottom of contact hole.
Accordingly, there exist ion bending and the situation of (Twisting) of being distorted at contact hole due to powered.
These problems can be by being improved from power supply to lower electrode LE with pulse type supply electric power.For example, such as
Shown in Figure 31, the RF power PA fixed to lower electrode LE with pulse type supply amplitude carries out plasma etching.In addition,
Figure 31 is the figure of one for showing the voltage to lower electrode supply.Consider that the improved mechanism is as follows.Supply electric power PA's
Period tonInterior, the ion of high speed reaches the bottom of contact hole.On the other hand, the t during not supply electric power PAOFFIt is interior, plasma
Thinning, the possibility that reaction product is decomposed by plasma is low, and deposit is made due to reaction product in contact hole
Side wall accumulation or make the possibility step-down of contact hole plug.In addition, in period tOFF, make powered due to the electric charge of ion
Situation relax, therefore ion is difficult to bend.Thus, as shown in figure 32, the plasma of the contact hole of high-aspect-ratio can be carried out
Body etches.In addition, Figure 32 is the figure of one of the contact hole of high-aspect-ratio obtained from showing to carry out plasma etching.
But in period tOFF, not to lower electrode LE supply electric powers, therefore without etching.Therefore, in plasma
In processing unit, in the case of to lower electrode LE with pulse type supply electric power, when reducing dutycycle, under etch-rate
Drop.If for example, the dutycycle of the electric power supplied to lower electrode LE is set into 10%, 90% time is in bottom
The state that electrode LE electric power disconnects.Thus, when dutycycle is set into 10%, what is worked in plasma etching is effective
Electric power can be changed into 1/10.Therefore, etch-rate declines.It is identical with the situation to the continuous supply electric powers of lower electrode LE in order to obtain
The etch-rate of degree is, it is necessary to make active power identical.For example, in the case where dutycycle is set into 10%, in order that effectively
Electric power is identical, it is desirable to be able to supplies the power supply of 10 times of electric power.Figure 33 A are to illustrate the relation between dutycycle and etch-rate
Figure.In Figure 33 A, transverse axis represents dutycycle, and the longitudinal axis represents etch-rate.Figure 33 B are illustrated between dutycycle and power supply capacity
Relation figure.In Figure 33 B, transverse axis represents dutycycle, and the longitudinal axis represents power supply capacity.By the transverse axis shown in Figure 33 A and Figure 33 B
Dutycycle be set to more that then dutycycle is smaller on the right side.As shown in Figure 33 A dotted line 140, when declining dutycycle, etching speed
Rate declines.Therefore, shown in the solid line 141 such as Figure 33 B, the decline with dutycycle accordingly makes power supply capacity increase general
In the case that active power is maintained fixed, etch-rate can be maintained as shown in Figure 33 A solid line 142.
Plasma processing apparatus can be by improving to height from power supply to lower electrode LE with pulse type supply electric power
The problem of when contact hole of depth-to-width ratio is etched.But from power supply to lower electrode LE with the feelings of pulse type supply electric power
Under condition, plasma processing apparatus needs the big power supply of capacity.For example, in the electricity using the pulse type that dutycycle is set to 10%
Power realizes the situation to the situation identical active power of the continuous supply electric powers of lower electrode LE with the power supply of the capacity from 1KW
Under, plasma processing apparatus needs the power supply of 10KW capacity.In addition, plasma processing apparatus is even in having used for example
In the case of the power supply of 10KW capacity, if dutycycle is set into 5%, active power is changed into 500W.On power supply, capacity
Bigger cost is tremendous to be increased, and size is also bigger.
On the other hand, the carrier group of the carrier group generating unit 62 of above-mentioned first embodiment and second embodiment generates
Portion 100 can be generated in the time domain by the first peak fractions and absolute value second peak smaller than the absolute value of the first peak fractions
The amplitude waveform that value part is alternately present, therefore being capable of systematic function and pulse type as described above come the carrier group that represents
The same waveform of waveform.Particularly, the carrier group generating unit 100 of second embodiment can generate the life of carrier wave by changing
The frequency of number N, the carrier wave generated by each generative circuit 110 into circuit 110, the offset of the phase in phase shifter 112, work(
The magnifying power of carrier wave in rate amplifier 113 generates the waveform close with the waveform of pulse type.In addition, above-mentioned first implements
The carrier group generating unit 62 of mode and the carrier group generating unit 100 of second embodiment are by the way that multiple carrier waves are synthesized, even if not
Increase generates the power supply capacity of each generative circuit 110 of each carrier wave, also being capable of the big carrier group of generating amplitude.
Figure 34 is the figure of one for showing the voltage to lower electrode supply.On Figure 34 top, show electric to bottom
The situation (dutycycle=100%) of the continuous supply high frequency electric power of pole LE and dutycycle is set to 50%, 30%, 10% come with pulse
To the waveform of the lower electrode LE electric signals supplied in the case of shape supply high frequency electric power.In addition, dutycycle is set to 50%,
30%th, in the case of 10%, the capacity of respective electric power is made to increase and amplitude increase.In addition, in Figure 34 bottom, show center
Frequency fc is set to 13.56MHz, frequency interval Δ f is set to 100KHz, the number N of carrier wave is set to 1 (CW), 3,5,7,13
In the case of to lower electrode LE supply carrier group electric signal waveform.On Figure 34 each curve map, transverse axis represents the time,
The longitudinal axis represents amplitude.The function of number N=3 waveform and the function phase of the waveform for the pulse type that dutycycle is 50% are same.Number N
The function of=5 waveform and the function phase of the waveform for the pulse type that dutycycle is 30% are same.The function of number N=13 waveform with
Dutycycle is that the function phase of the waveform of 10% pulse type is same.
Then, during to the carrier group of the carrier group generating unit 100 using second embodiment carrying out plasma etching
One of result illustrate.Figure 35 is the figure of one of the comparative result for showing etch-rate.Figure 35 example shows pin
Etch-rate in the case of carrying out plasma etching to SiO2 wafer W.In Figure 35, transverse axis represents frequency interval Δ f,
The longitudinal axis represents etch-rate.Show by line 150 centre frequency fc being set to 13.56MHz, the number N by carrier wave in Figure 35
Etch-rate in the case of being set to 7, make frequency interval Δ f change and carrying out plasma etching respectively.In addition, scheming
151 shown period t by a dotted line in the waveform for the pulse type that dutycycle is 30% in 35onThe appearance cycle be set to and frequency
Etch-rate in the case of cycle corresponding to interval delta f and respectively progress plasma etching.As shown in figure 35, second implements
The carrier group generating unit 100 of mode can obtain the etch-rate same with the waveform of pulse type.
So, the carrier group generating unit 100 involved by second embodiment is different with defined frequency interval generation frequency
Carrier wave, make the different carrier wave of the frequency of generation phase respectively in order skew as defined in the cycle, by the frequency after phase offset
The different carrier wave synthesis of rate, thus generates carrier group.Thus, even if without using the big power supply of capacity, carrier group generating unit 100
It can be carried by the way that carrier wave to be synthesized to the function identical of the waveform come systematic function Yu the pulse type for having used the big power supply of capacity
The electric signal of wave group.In addition, carrier group generating unit 100 can also be without using the big power supply of capacity, therefore can be by power supply cost
Reduce, additionally it is possible to make the compact in size of power supply.
In addition, in the above-described embodiment, occur can with controls of the control unit Cnt to parameter correspondingly each signal
The frequency for the carrier wave that device 111 is generated, the offset of phase based on each phase shifter 112 and based on each power amplifier 113
Carrier wave magnifying power change in case of be illustrated, but be not limited to this.Each signal can also be sent out
The frequency for the carrier wave that raw device 111 is generated, the offset of the phase based on each phase shifter 112 and based on each power amplifier
The magnifying power of 113 carrier wave is identified as fixing.For example, it is also possible to be, each signal generator 111 is set by centre frequency fc
For 13.56MHz, respectively with defined frequency interval Δ f (for example, frequency interval Δ f) regularly generates carrier wave f electric signal.
Alternatively, it is also possible to be, each phase shifter 112 makes frequency regularly be offset relative in the adjacent carrier wave of the small side of frequency respectively
90 ° of phases.Alternatively, it is also possible to be, each power amplifier 113 amplifies carrier wave with defined magnifying power respectively.
In addition, in the above-described embodiment, the carrier wave f generated by carrier group generating unit 100 number is set to odd number
In case of be illustrated, but be not limited to this.Carrier wave f number can also be even number.In this case, such as
By make frequency relative to centre frequency it is symmetrical in a manner of generate carrier wave f.For example, centre frequency fc is being set to 13.56MHz, incited somebody to action
In the case that frequency interval Δ f is set to 100KHz and generates four carrier wave f1~f4, carrier wave f1 frequency is 13.41MHz.Carrier wave
F2 frequency is 13.51MHz.Carrier wave f3 frequency is 13.61MHz.Carrier wave f4 frequency is 13.71MHz.
In addition, in the above-described embodiment, to use CCP as exemplified by the plasma processing apparatus 10 of plasma source
It is illustrated, but plasma source is not limited to CCP, can also use inductively coupled plasma (ICP：Inductively
Coupled Plasma (inductively coupled plasma)).In the case of ICP is used as plasma source, supplied to ICP with antenna
To the carrier group generated by carrier group generating unit 62.Using being supplied with the ICP of carrier group with antenna come in process container 12
Form induction field.Moreover, using induction field come the generation plasma in process container 12.Now, ICP by the use of antenna as
Using carrier group function is played come the plasma generating unit of the generation plasma in process container 12.
Claims (11)
1. a kind of plasma processing apparatus, it is characterised in that have：
Process container；
Carrier group generating unit, it is used to generate carrier group, and the carrier group includes the different multiple carrier waves of frequency in a frequency domain, when
Replace by the first peak fractions second peak fractions smaller than the absolute value of first peak fractions with absolute value in domain
Existing amplitude waveform represents；And
Plasma generating unit, it generates plasma using the carrier group in the process container.
2. plasma processing apparatus according to claim 1, it is characterised in that
The difference of first peak fractions and second peak fractions in the amplitude waveform is according in the multiple carrier wave
The amplitude of carrier wave corresponding with the centre frequency of the carrier group carried with corresponding with the centre frequency except the carrier group
The ratio between amplitude of carrier wave beyond ripple and change.
3. plasma processing apparatus according to claim 1 or 2, it is characterised in that
The time of occurrence of first peak fractions in the amplitude waveform relative to first peak fractions appearance when
Between and the ratio between the summations of time of occurrence of second peak fractions changed according to the number of the multiple carrier wave.
4. the plasma processing apparatus according to any one of claims 1 to 3, it is characterised in that
The time interval of two first peak fractions adjacent to each other in the amplitude waveform is according to the multiple carrier wave
Frequency interval and change.
5. the plasma processing apparatus according to any one of Claims 1 to 4, it is characterised in that
The carrier group generating unit has：
Wave data generating unit, it is used to generate Wave data；
Quantization portion, it is used to carry out quantization to the Wave data；
Inverse fourier transform portion, it by the quantized Wave data to carrying out inverse fourier transform, thus by the ripple
The in-phase component data of graphic data and quadrature component data separating；And
Modulation portion, it differs 90 ° to phase each other using the in-phase component data and quadrature component data of the Wave data
Reference carrier be modulated, thus generate the carrier group.
6. plasma processing apparatus according to claim 5, it is characterised in that
The Wave data generating unit generates first waveform data, the second time after the very first time in the very first time
Generation second Wave data different from the first waveform data,
The modulation portion generates the carrier group in the very first time according to the first waveform data, in second time
The carrier group is generated according to second Wave data.
7. plasma processing apparatus according to claim 5, it is characterised in that
The Wave data generating unit is generated first waveform data and the second waveform number different from the first waveform data
It is used as the Wave data according to the synthetic waveform data being synthesized into,
The modulation portion passes through first peak fractions and described second in the time domain according to synthetic waveform data generation
The carrier group that the amplitude waveform that peak fractions are alternately present and the 3rd peak fractions occur at any time represents.
8. the plasma processing apparatus according to any one of Claims 1 to 4, it is characterised in that
The carrier group generating unit has：
Carrier wave generating unit, it is respectively with the different carrier wave of defined frequency interval generation frequency；
Offset portion, it makes as defined in the phase of the different carrier wave of the frequency that the carrier wave generating unit generates is offset respectively in order
Cycle；And
Combining unit, its by will have been carried out by the offset portion the different carrier wave of the frequency after phase offset synthesize it is described to generate
Carrier group.
9. plasma processing apparatus according to claim 8, it is characterised in that
The offset portion makes the phase of the different carrier wave of the frequency be respectively relative in the adjacent carrier wave of the small side of frequency
90 ° of phase offset.
10. plasma processing apparatus according to claim 8, it is characterised in that
The carrier group generating unit also has enlarging section, and the enlarging section is used for after having carried out phase offset by the offset portion
The different carrier wave amplification of frequency,
The offset portion makes the phase offset of the different carrier wave of frequency with subtracting the load based on the enlarging section from the defined cycle
Measured corresponding to offset after the offset of the phase of ripple,
The combining unit is by the way that the different carrier wave of the frequency after being amplified by the enlarging section is synthesized to generate the carrier group.
A kind of 11. method of plasma processing, it is characterised in that
Carrier group is generated, the carrier group includes the different multiple carrier waves of frequency, passes through the first peak value portion in the time domain in a frequency domain
Divide the amplitude waveform expression that second peak fractions smaller than the absolute value of first peak fractions with absolute value are alternately present,
Plasma is generated in process container using the carrier group.
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| JP6797273B2 (en) * | 2019-02-05 | 2020-12-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
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| CN1270684A (en) * | 1997-09-17 | 2000-10-18 | 东京电子株式会社 | System and method for monitoring and controlling gas plasma process |
| JP2007035597A (en) * | 2005-07-29 | 2007-02-08 | Hitachi High-Technologies Corp | Plasma treatment device and treatment method |
| CN101156314A (en) * | 2005-04-04 | 2008-04-02 | 东京毅力科创株式会社 | Microwave generating apparatus and microwave generating method |
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| WO1999014394A1 (en) * | 1997-09-17 | 1999-03-25 | Tokyo Electron Limited | Device and method for detecting and preventing arcing in rf plasma systems |
| EP1023771B1 (en) * | 1997-09-17 | 2007-01-17 | Tokyo Electron Limited | Electrical impedance matching system and method |
| US7405521B2 (en) | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| JP6512962B2 (en) * | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | Plasma processing system |
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| CN1270684A (en) * | 1997-09-17 | 2000-10-18 | 东京电子株式会社 | System and method for monitoring and controlling gas plasma process |
| CN101156314A (en) * | 2005-04-04 | 2008-04-02 | 东京毅力科创株式会社 | Microwave generating apparatus and microwave generating method |
| JP2007035597A (en) * | 2005-07-29 | 2007-02-08 | Hitachi High-Technologies Corp | Plasma treatment device and treatment method |
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| CN110061819A (en) * | 2018-01-19 | 2019-07-26 | 华为技术有限公司 | A kind of method for transmitting signals |
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