CN107295738A - A kind of plasma processing apparatus - Google Patents
A kind of plasma processing apparatus Download PDFInfo
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- CN107295738A CN107295738A CN201610221384.9A CN201610221384A CN107295738A CN 107295738 A CN107295738 A CN 107295738A CN 201610221384 A CN201610221384 A CN 201610221384A CN 107295738 A CN107295738 A CN 107295738A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus.The plasma processing apparatus includes cavity and radio-frequency power supply, cavity is grounded, liner is set in inside cavities, and be connected with cavity, radio-frequency power supply is used to apply radio-frequency power into cavity, to carry out corona treatment, radio-frequency power is by plasma and the cavity formation radio frequency path of ground connection, also include impedance ground adjustment unit, impedance ground adjustment unit is connected in series between liner and cavity, or, impedance ground adjustment unit is connected in series between cavity and ground, the impedance ground for adjusting radio frequency path.The plasma processing apparatus can adjust the impedance ground of radio frequency path, the impedance ground of radio frequency path is set to reach minimum value, so as to reduce the loss of radio-frequency power, it also avoid simultaneously and High-frequency Interference electromagnetic wave introduced in cavity, and then effective utilization of radio-frequency power is realized, while further improves the interference free performance of cavity and the stability of plasmoid.
Description
Technical field
The present invention relates to plasma treatment technique field, in particular it relates to a kind of plasma processing apparatus.
Background technology
Plasma is widely used in the production process of semiconductor devices.In plasma process system, radio-frequency power supply transmits RF energy to reaction chamber by coalignment, the gas with certain air pressure is excited into plasma by RF energy in reaction chamber, contain substantial amounts of electronics in the plasma excited, ion, the atom of excitation state, molecule and free radical isoreactivity particle, these active particles and be placed in cavity and expose to the open air the wafer under plasma environment interaction, wafer material surface is set to occur various physical and chemical reactions, so that material surface performance changes, complete the etching or other technical process of wafer.
The plasma apparatus being widely used at present is inductive coupling plasma generator (ICP).In inductively coupled plasma (ICP) generating means, radio-frequency power makes gas generation ionization form plasma by inductance-coupled coil.This mode can obtain highdensity plasma, and simple in construction, low cost under relatively low operating air pressure.Radio frequency source (decision plasma density) and chip bench radio frequency source (particle direction and energy on chip are incided in decision) independent control that can simultaneously to generation plasma.
Conventional inductance coupled plasma device is as shown in Figure 1, power is loaded onto on the outer ring and inner ring of inductance-coupled coil 8 by wherein upper radio-frequency power supply 13 by the first adaptation 6 and current distribution unit 7, process gas is entered in reaction chamber 1 (liner in reaction chamber 1 is not marked) by the nozzle 10 installed on quartz medium window 9, the RF energy on inductance-coupled coil 8 is coupled in chamber 1 by medium window 9 simultaneously, produce plasma 14, act on chip 15, chip 15 is placed in the top of electrostatic chuck 16, RF energy is loaded onto on electrostatic chuck 16 by lower radio-frequency power supply 17 by the second adaptation 12, so as to carry out the processing of chip 15.
The plasma that Fig. 2 is shown in Fig. 1 produces the side section rough schematic view of chamber; focusing ring 18 is placed at the top edges of electrostatic chuck 16; the top flange of the liner 111 of chamber 1 is in contact with side with the cavity 110 of chamber 1; cavity 110 is grounded; in plasma produces loop with playing important radio frequency; liner 111 can constrain plasma 14 simultaneously, and the protection inwall of chamber 1 is not etched with bottom.The inside of chamber 1 produces plasma 14 upper radio-frequency power and lower radio-frequency power are loaded simultaneously when, two radio frequency paths that radio-frequency power is formed by plasma 14 indicated in Fig. 2 simultaneously above and below, first arrow 19 represents that upper radio-frequency power is loaded onto after inductance-coupled coil 8 and is coupled in chamber 1 to produce plasma 14 by quartz medium window 9, and then form upper radio frequency path with the ground connection of liner 111 by plasma 14, radio-frequency power is loaded onto after bottom electrode (electrostatic chuck 16) under the second arrow 20 is represented simultaneously passes through radio frequency path under plasma 14 is formed with the ground connection of liner 111 by capacity coupled mode.
Liner 111 is connected with the cavity 110 of chamber 1 in Fig. 2, and cavity 110 is grounded, as radio frequency important in radio frequency path up and down.Typically require that impedance ground is zero in preferable radio frequency path, impedance ground should be as far as possible small in actual application, and the mode that liner is grounded in above-mentioned plasma chamber introduces extra ground capacity C, sheaths space-charge region can be produced between plasma 14 and liner 111, the sheaths region forms a potential difference, as shown in Figure 3 and Figure 4, the region can be equivalent to an electric capacity C, so as to introduce an impedance valueImpedance ground, the impedance ground value non-zero.Due to the presence of the radio frequency impedance ground value, so that in actual application radio-frequency power eventually through radio frequency when with the presence of corresponding power attenuation, electric capacity C presence may introduce other high-frequency electromagnetic wave interference simultaneously, so as to influence the stability and state of plasma in chamber.
The content of the invention
There is provided a kind of plasma processing apparatus for above-mentioned technical problem present in prior art by the present invention.The plasma processing apparatus can adjust the impedance ground of radio frequency path, minimum value can be reached under the conditions of a variety of plasma-treating technologies by making the impedance ground of radio frequency path, so as to reduce the loss of radio-frequency power, it also avoid simultaneously and High-frequency Interference electromagnetic wave introduced in cavity, and then effective utilization of radio-frequency power is realized, while further improves the interference free performance of cavity and the stability of plasmoid.
The present invention provides a kind of plasma processing apparatus, including cavity, liner and radio-frequency power supply, the cavity ground connection, the liner is set in the inside cavities, and be connected with the cavity, the radio-frequency power supply is used to apply radio-frequency power into the cavity, to carry out corona treatment, the radio-frequency power is by the plasma and the cavity formation radio frequency path of ground connection, also include impedance ground adjustment unit, the impedance ground adjustment unit is connected in series between the liner and the cavity, or, the impedance ground adjustment unit is connected in series between the cavity and ground, impedance ground for adjusting the radio frequency path.
Preferably, the impedance ground adjustment unit includes at least one variable inductance.
Preferably, the impedance ground adjustment unit includes at least one fixed inductance.
Preferably, the total inductance value of the impedance ground adjustment unitWherein, f is the frequency of the radio-frequency power supply, and c is the capacitance of the equivalent capacity formed between the plasma and the liner.
Preferably, the variable inductance includes scalable inductance coil and adjusting rod, the axial length of the scalable inductance coil is adjusted by the adjusting rod, so as to adjust the inductance value of the variable inductance.
Preferably, the impedance ground adjustment unit is connected in series between the liner and the cavity, the two ends of the scalable inductance coil connect the liner and the cavity respectively, the two ends of the adjusting rod are connected with the liner and the chamber activities respectively, the adjusting rod can adjust the spacing between the liner and the cavity, so that the axial length of the scalable inductance coil changes with the change of spacing between the liner and the cavity.
Preferably, the variable inductance includes 5-10.
Preferably, the radio-frequency power supply includes the first radio-frequency power supply and the second radio-frequency power supply, and first radio-frequency power supply is used to make to produce the plasma in the cavity；Second radio-frequency power supply is used to attract the plasma in the cavity.
Preferably, the frequency of the radio-frequency power supply includes 400KHz, 2MHz, 13MHz, 27MHz, 40MHz or 60MHz.
Preferably, the plasma processing apparatus is inductance coupling plasma processing device or capacitance coupling plasma processing unit.
Beneficial effects of the present invention：Plasma processing apparatus provided by the present invention, by setting impedance ground adjustment unit, the impedance ground of radio frequency path can be adjusted, minimum value can be reached under the conditions of a variety of plasma-treating technologies by making the impedance ground of radio frequency path, so as to reduce the loss of radio-frequency power, it also avoid simultaneously and High-frequency Interference electromagnetic wave introduced in cavity, and then realize effective utilization of radio-frequency power, while further improves the interference free performance of cavity and the stability of plasmoid.
Brief description of the drawings
Fig. 1 is the structural representation of inductance coupled plasma device in the prior art；
Fig. 2 is the structure sectional view that Fig. 1 plasmas produce chamber；
Fig. 3 is the plasma device plasma sheaths area potential image in Fig. 1；
Fig. 4 is the equivalent circuit diagram in Fig. 1 plasma sheaths area；
Fig. 5 is the structural representation of the plasma processing unit of the embodiment of the present invention 1；
Fig. 6 is the structural representation of inductance series arm in impedance ground adjustment unit in Fig. 5；
Fig. 7 is the impedance ground equivalent circuit diagram of the first radio frequency path and the second radio frequency path in the embodiment of the present invention 1；
Fig. 8 is the structural representation of variable inductance in the embodiment of the present invention 2；
Fig. 9 is the structural representation of the plasma processing unit of the embodiment of the present invention 3.
Description of reference numerals therein：
1. chamber；11. inductance series arm；110. cavity；111. liner；2. radio-frequency power supply；21. the first radio-frequency power supply；22. the second radio-frequency power supply；3. impedance ground adjustment unit；31. scalable inductance coil；32. adjusting rod；4. substrate；5. base station；6. the first adaptation；7. current distribution unit；8. inductance-coupled coil；9. medium window；10. nozzle；12. the second adaptation；13. on radio-frequency power supply；14. plasma；15. chip；16. electrostatic chuck；17. lower radio-frequency power supply；18. focusing ring；19. the first arrow；20. the second arrow；L. fixed inductance；C. electric capacity；H. the axial length of scalable inductance coil.
Embodiment
To make those skilled in the art more fully understand technical scheme, a kind of plasma processing apparatus provided by the present invention is described in further detail with reference to the accompanying drawings and detailed description.
Embodiment 1：
The present embodiment provides a kind of plasma processing apparatus, as shown in Figure 5, including cavity 110 and radio-frequency power supply 2, cavity 110 is grounded, liner 111 is set in the inner side of cavity 110, and be connected with cavity 110, radio-frequency power supply 2 is used to apply radio-frequency power into cavity 110, to carry out corona treatment, radio-frequency power is by plasma 14 and the formation radio frequency path of cavity 110 of ground connection, also include impedance ground adjustment unit 3, impedance ground adjustment unit 3 is connected in series between liner 111 and cavity 110, the impedance ground for adjusting radio frequency path.
By setting impedance ground adjustment unit 3, the impedance ground of radio frequency path can be adjusted, minimum value can be reached under the conditions of a variety of plasma-treating technologies by making the impedance ground of radio frequency path, so as to reduce the loss of radio-frequency power, it also avoid simultaneously and High-frequency Interference electromagnetic wave introduced in cavity 110, and then effective utilization of radio-frequency power is realized, while further improves the interference free performance of cavity 110 and the stability of the state of plasma 14.
In the present embodiment, radio-frequency power supply 2 includes the first radio-frequency power supply 21 and the second radio-frequency power supply 22, and the first radio-frequency power supply 21 is arranged at the top of cavity 110, for radio-frequency power is applied inside cavity 110, so as to produce plasma 14 in cavity 110.In the present embodiment, power is loaded onto on inductance-coupled coil 8 by the first radio-frequency power supply 21 by the first adaptation 6 and current distribution unit 7, process gas is entered in cavity 110 by the nozzle 10 installed on quartz medium window 9, the RF energy on inductance-coupled coil 8 is coupled in cavity 110 by medium window 9 simultaneously, the process gas entered in cavity 110 is set to ionize to form plasma 14, this mode can obtain highdensity plasma 14 under relatively low operating air pressure, and plasma 14 acts on the substrate 4 being placed on base station 5.Wherein, the radio-frequency power of the first radio-frequency power supply 21 output forms the first radio frequency path by the plasma 14 in cavity 110 and the ground connection of cavity 110.Second radio-frequency power supply 22 is arranged at the lower section of cavity 110, and radio-frequency power is applied on the base station 5 to the pending substrate 4 of carrying inside cavity 110.In the present embodiment, RF energy is loaded onto on base station 5 by the second radio-frequency power supply 22 by the second adaptation 12, second radio-frequency power supply 22 can make to produce back bias voltage on base station 5, to attract the plasma 14 in cavity 110, so that the plasma 14 in cavity 110 can be well handled substrate 4.Wherein, the radio-frequency power of the second radio-frequency power supply 22 output forms the second radio frequency path by the plasma 14 in cavity 110 and the ground connection of cavity 110.
It should be noted that in plasma processing apparatus, the first radio-frequency power supply 21 and the second radio-frequency power supply 22 can also only set one of them.
In the present embodiment, impedance ground adjustment unit 3 includes at least one fixed inductance L, fixed inductance L is multiple in the present embodiment, multiple fixed inductance L are connected in series in multiple different inductance series arms respectively, as shown in Figure 5, inductance series arm is provided with six, and six inductance series arms are connected in series in the diverse location between cavity 110 and substrate 111 respectively, and six inductance series arms are connected in parallel with each other.Be illustrated in figure 6 multiple fixed inductances (such as L1, L2 ... Ln) in each inductance series arm is connected in series structure.Wherein, after impedance ground adjustment unit 3 is accessed, the impedance ground equivalent circuit of first radio frequency path and the second radio frequency path is as shown in Figure 7, electric capacity C in Fig. 7 is the equivalent capacity of the sheaths space-charge region formed in cavity 110 between plasma 14 and liner 111, and impedance ground adjustment unit 3 is connected in series to form series resonant circuit after accessing with electric capacity C.The impedance ground value of the series resonant circuit isBy the total inductance value of the fixed inductance L quantity regulated ground impedance adjustment unit 3 accessed in regulated ground impedance adjustment unit 3, the impedance ground that the series resonant circuit can be made is zero, by being derived to formula (1), when the total inductance value of impedance ground adjustment unit 3 isWhen, the impedance ground of the series resonant circuit is zero, in formula (2), and f is the frequency of radio-frequency power supply 2, and c is the capacitance of the equivalent capacity formed between plasma 14 and liner 111.
It should be noted that the number of the fixed inductance L in each inductance series arm is determined according to the size of the sheath layer capacitance formed at its link position between plasma 14 and liner 111.It is of course also possible to connect a fixed inductance L between cavity 110 and liner 111, it is adjusted by the impedance ground formed between fixed inductance L plasmas 14 and liner 111, it is zero to make the impedance ground between plasma 14 and liner 111.
In the present embodiment, it is preferred that the setting number of inductance series arm is 5-10 in impedance ground adjustment unit 3.By being connected in series multiple fixed inductance L in multiple inductance series arms, the total inductance value for finally making impedance ground adjustment unit 3 is.
It should be noted that, the number of inductance in the present embodiment needs to be determined according to the different technology conditions of plasma-treating technology, due under different process conditions, the state of plasma 14 is different with flux, the voltage of the sheaths space-charge region thus formed is also differed, equivalent capacitance C is also different, therefore under different plasma process conditions, need the total inductance value by adjusting impedance ground adjustment unit 3 accordingly, adjust fixed inductance L number, so that by equivalent capacity C and total inductance L-shaped into series resonant circuit impedance ground value it is minimum (being such as zero).
In the present embodiment, the frequency of radio-frequency power supply 2 can be any frequencies such as 400KHz, 2MHz, 13MHz, 27MHz, 40MHz or 60MHz.
In the present embodiment, plasma processing apparatus is inductance coupling plasma processing device or capacitance coupling plasma processing unit.
Embodiment 2：
The present embodiment provides a kind of plasma processing apparatus, unlike embodiment 1, and impedance ground adjustment unit includes at least one variable inductance, and the inductance value of variable inductance can adjust change.
In the present embodiment, variable inductance includes multiple.Preferably, variable inductance includes 5-10.Multiple variable inductances are respectively connected between cavity and liner, and multiple variable inductances are connected in parallel each other.It should be noted that can also be that an inductance series arm is formed after multiple variable inductances are connected in series, the inductance series arm is connected between cavity and liner；Multiple inductance series arms can be connected between cavity and liner, multiple inductance series arms are connected in parallel each other.
It is further to note that each inductance value of variable inductance or the inductance value of each inductance series arm are determined according to the size of the sheath layer capacitance formed at its link position between plasma and liner.It is of course also possible to connect a variable inductance between cavity and liner, it is adjusted by the impedance ground formed between the variable inductance plasma and liner, it is zero to make the impedance ground between plasma and liner.
As shown in figure 8, variable inductance includes scalable inductance coil 31 and adjusting rod 32, the axial length h of scalable inductance coil 31 is adjusted by adjusting rod 32, so as to adjust the inductance value of variable inductance.In the present embodiment, impedance ground adjustment unit 3 is connected in series between liner 111 and cavity 110, the two ends of scalable inductance coil 31 connect liner 111 and cavity 110 respectively, the two ends of adjusting rod 32 are flexibly connected with liner 111 and cavity 110 respectively, adjusting rod 32 can adjust the spacing between liner 111 and cavity 110, so that the axial length h of scalable inductance coil 31 changes with the change of spacing between liner 111 and cavity 110.
Wherein, the calculation formula of the scalable inductance value of inductance coil 31 is：
Wherein, μ 0 is space permeability, and μ s are the relative permeability of the scalable inner core of inductance coil 31, μ s=1 during air core coil, n are coil turn, and S represents the sectional area of coil, h is the axial length of coil, and coefficient k depends on the radius R and axial length h of coil ratio.
Because the calculation formula of the scalable inductance value of inductance coil 31 is understood, when the axial length h increases of scalable inductance coil 31, inductance value L reduces, when the axial length h of scalable inductance coil 31 reduces, inductance value L increases therewith, the regulation of variable inductance inductance value can be achieved in the axial length h for thus adjusting scalable inductance coil 31 by adjusting rod 32, so as to finally realize that the impedance ground value for the series resonant circuit that the electric capacity formed between plasma and liner 111 and variable inductance are formed is minimum.
In the present embodiment, adjusting rod 32 uses lock-screw, one end of lock-screw is threadedly coupled with liner 111, cavity 110 offers screwed hole in the position corresponding with the other end of lock-screw, when the other end using torque adjusting lock-screw enters the depth in screwed hole, spacing between liner 111 and cavity 110 correspondingly changes, so that scalable inductance coil 31 is compressed or stretched, and then the axial length h of scalable inductance coil 31 is decreased or increased, then realize the regulation to variable inductance inductance value；After regulation is suitable, one end of lock-screw is locked by locking nut, you can lock-screw is fixed.
It is further to note that the regulation to variable inductance inductance value can also be adjusted by the regulation of sectional area or coil turn to formula (3) coil, the regulative mode in the present embodiment is not limited only to.
The other structures of the present embodiment plasma processing unit and setting are in the same manner as in Example 1, and here is omitted.
Embodiment 3：
The present embodiment provides a kind of plasma processing apparatus, and unlike embodiment 1-2, as shown in figure 9, impedance ground adjustment unit 3 is connected in series between cavity 110 and ground.
In the present embodiment, cavity 110 is woven with ground by copper, and impedance ground adjustment unit 3 is connected between cavity 110 and copper braid over braid.By the way that impedance ground adjustment unit 3 is connected in series between cavity 110 and copper braid over braid, the regulation to radio frequency path impedance ground equally can be realized.
The other structures of the present embodiment plasma processing unit and setting are identical with any one in embodiment 1-2, and here is omitted.
Embodiment 1-3 beneficial effect：Plasma processing apparatus provided in embodiment 1-3, by setting impedance ground adjustment unit, the impedance ground of radio frequency path can be adjusted, minimum value can be reached under the conditions of a variety of plasma-treating technologies by making the impedance ground of radio frequency path, so as to reduce the loss of radio-frequency power, it also avoid simultaneously and High-frequency Interference electromagnetic wave introduced in cavity, and then effective utilization of radio-frequency power is realized, while further improves the interference free performance of cavity and the stability of plasmoid.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the illustrative embodiments that use, but the invention is not limited in this.For those skilled in the art, without departing from the spirit and substance in the present invention, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of plasma processing apparatus, including cavity, liner and radio-frequency power supply,
The cavity ground connection, the liner is set in the inside cavities, and connects with the cavity
Connect, the radio-frequency power supply be used for apply radio-frequency power into the cavity, with carry out etc. from
Daughter is handled, and the radio-frequency power is by the plasma and the cavity shape of ground connection
Into radio frequency path, it is characterised in that also including impedance ground adjustment unit, the ground connection
Impedance adjustment unit is connected in series between the liner and the cavity, or, it is described
Impedance ground adjustment unit is connected in series between the cavity and ground, described for adjusting
The impedance ground of radio frequency path.
2. plasma processing apparatus according to claim 1, it is characterised in that
The impedance ground adjustment unit includes at least one variable inductance.
3. plasma processing apparatus according to claim 1, it is characterised in that
The impedance ground adjustment unit includes at least one fixed inductance.
4. the plasma processing apparatus according to Claims 2 or 3, its feature
It is, the total inductance value of the impedance ground adjustment unitWherein, f
For the frequency of the radio-frequency power supply, formed between the c plasmas and the liner
The capacitance of equivalent capacity.
5. plasma processing apparatus according to claim 2, it is characterised in that
The variable inductance includes scalable inductance coil and adjusting rod, is adjusted by the adjusting rod
The axial length of the scalable inductance coil is saved, so as to adjust the electricity of the variable inductance
Inductance value.
6. plasma processing apparatus according to claim 5, it is characterised in that
The impedance ground adjustment unit is connected in series between the liner and the cavity, institute
The two ends for stating scalable inductance coil connect the liner and the cavity, the tune respectively
The two ends of pole are connected with the liner and the chamber activities respectively, the adjusting rod energy
The spacing between the liner and the cavity is adjusted, so that the scalable inductance coil
Axial length change with the change of spacing between the liner and the cavity.
7. plasma processing apparatus according to claim 2, it is characterised in that
The variable inductance includes 5-10.
8. plasma processing apparatus according to claim 1, it is characterised in that
The radio-frequency power supply includes the first radio-frequency power supply and the second radio-frequency power supply, first radio frequency
Power supply is used to make to produce the plasma in the cavity；Second radio-frequency power supply is used
The plasma in the attraction cavity.
9. plasma processing apparatus according to claim 1, it is characterised in that
The frequency of the radio-frequency power supply includes 400KHz, 2MHz, 13MHz, 27MHz, 40MHz
Or 60MHz.
10. plasma processing apparatus according to claim 1, its feature exists
In the plasma processing apparatus is inductance coupling plasma processing device or electricity
Hold coupled plasma processing unit.
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| CN110911262B (en) * | 2019-11-12 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Inductively coupled plasma system |
| CN117272770A (en) * | 2023-10-07 | 2023-12-22 | 北京航空航天大学 | Analysis method for gap radio frequency discharge characteristics of fuel system based on parameterized model |
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