CN107434239A - A kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method - Google Patents
A kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method Download PDFInfo
- Publication number
- CN107434239A CN107434239A CN201710613928.0A CN201710613928A CN107434239A CN 107434239 A CN107434239 A CN 107434239A CN 201710613928 A CN201710613928 A CN 201710613928A CN 107434239 A CN107434239 A CN 107434239A
- Authority
- CN
- China
- Prior art keywords
- thin film
- electrode
- film electrode
- artificial cochlea
- parylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/02—Details
- A61N1/04—Electrodes
- A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode
- A61N1/0526—Head electrodes
- A61N1/0541—Cochlear electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/06—Bio-MEMS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0107—Sacrificial metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Heart & Thoracic Surgery (AREA)
- Biomedical Technology (AREA)
- Cardiology (AREA)
- Radiology & Medical Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Otolaryngology (AREA)
- Prostheses (AREA)
Abstract
The invention discloses a kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method.Including：The thin film electrode array uses linear structure, and electrode shape is circle in thin film planar, has convex shape perpendicular to in-plane electrode；The size of electrode designs according to the requirement of artificial cochlea's exciting current with electrode material charge density safety value in thin film electrode array, wherein, electrode centers spacing >=150 μm, each electrode exposed area diameter >=70 μm.Present invention introduces MEMS micro-processing technology, the electrode density of electrod-array is improved, reduces the processing cost of manual processing.
Description
Technical field
The present invention relates to medicine equipment, Bio-MEMS (Micro-electromechanical Systems, micro-electro-mechanical systems
System), artificial cochlea electrode array technique field, more particularly to a kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and
Processing method.
Background technology
Auditorily handicapped is a kind of common disease, for the middle deaf patient of severe phonosensitive nerve, is responsible for the machinery of lymph
Conversion of motion is the damage of hair cell of electric signal.Artificial cochlea to corresponding site nerve by directly imposing electric excitation, instead of hair
The function of cell recovers the auditory function of patient so as to realize.Traditional artificial cochlea mainly includes two parts：First portion
It is external sonication module to divide, and completes the collection of sound, handles and transmits energy and control signal, including wheat to implant part
Gram wind, digital signal processor, power amplifier, radiofrequency launcher, antenna, power supply etc., respectively after ear, the portion such as subcutaneously
Position.The second part is implant system, the electrod-array of artificial cochlea, as the actuating station of artificial cochlea, completes energy and control
The reception of signal processed, the application of electrode multi-path choice and electric excitation.System includes antenna, radio frequency receiver, the control electricity of sealing
Road, electrod-array etc..
The basilar membrane of people has frequency topology distribution, i.e., different basilar memebrane positions, is dispersed with perception different frequency
The nerve of acoustical signal, therefore the multi-channel electrode by being distributed in different zones encourages, and can realize the separation of sound frequency, this
It is the operation principle of artificial cochlea electrode array.
The electrod-array of artificial cochlea should possess enough flexibilities, and meet implantation position, i.e., be implanted into cochlea by oeil de boeuf
The physical dimension constraint of tympanic canal.Electrode points use the design of non-penetration type to protect the basilar memebrane of cochlea.In theory, have more
The electrod-array of passage and number of electrodes, using the teaching of the invention it is possible to provide higher frequency resolution.Current commercial artificial cochlea electrode array uses
Traverse design is wound, electrod-array section is circle, and using silica gel as carrier, platinum is according to alloy as wire, and platinum is as electrode.
In correlation technique, artificial cochlea electrode array, because the design of wound form wire, its cross-sectional diameter is relatively
Greatly, the number of electrode is limited, and caused deficiency is the density deficiency of electrode, the excitation lack of resolution that can be provided, plants
Tissue damage is more likely caused during entering；Meanwhile electrod-array is related to more manual processing operation, cost is higher.
With the development of micro-processing technology, MEMS is continued to bring out and applied in every field.In Bio-MEMS field,
The appearance of MEMS microelectrodes provides interface for the interaction scenarios of many electroneurographic signals.It is small, electric that MEMS microelectrodes possess size
The characteristics of pole density is high, MEMS microelectrode arrays use membrane structure more, and flexible higher, it can be applied to electric excitation environment,
Electrical signal collection is can also be applied to, application value is extensive.
During MEMS electrode designs, for the MEMS device design of artificial cochlea electrode array, such as：Silicon substrate people
Work cochlear electrode array, but its silicon base rigidity is larger, is not easy to be implanted into；Flexible electrode battle array based on Parylene material
Row, technique are related to secondary metals and peel off (titanium and platinum) and three times parylene deposition；Based on dimethyl silicone polymer
(PDMS) polymeric material, but be related in process engineering and liquid metal is expelled to the behaviour by hand such as flexible polymer film through hole
Make.
In addition MEMS thin film electrode arrays are also widely used in other medical fields such as brain electro-detection, retina detection and
Skin irritatin and detection.Such as：Existing flexible retina microelectrode employs individual layer Parylene as substrate, has circle
Raised electrode pattern, it is related to electroplating technology in its technique and lead plane and Parylene plane is made even, process complexity
Height, individual layer Parylene also lack separation layer；In addition, also bed die of the research and utilization silicon as electrode protrusion, is a kind of hard
Matter micropin designs, and is more suitable for thrust-type contact scene.
The content of the invention
It is contemplated that at least solves one of technical problem in above-mentioned correlation technique to a certain extent.
Therefore, it is an object of the present invention to propose a kind of MEMS thin film electrode arrays that can be applied to artificial cochlea,
MEMS micro-processing technology is introduced, improves the electrode density of electrod-array, than existing artificial cochlea electrode array-processing method more
It is inexpensive and more efficient.
To achieve these goals, one aspect of the present invention discloses a kind of MEMS membrane electrodes that can be applied to artificial cochlea
Array, including：Using linear structure, electrode shape is circle in thin film planar, has projection perpendicular to in-plane electrode
Shape；The size of electrode is according to the requirement of artificial cochlea's exciting current and electrode material charge density safety value in thin film electrode array
Design, wherein, electrode centers spacing >=150 μm, each electrode exposed area diameter >=70 μm.
In addition, the MEMS thin film electrode arrays according to the above embodiment of the present invention that can be applied to artificial cochlea can also have
There is technical characteristic additional as follows：
Further, making the material of the thin film electrode array includes：The making material of substrate and separation layer includes poly-
Paraxylene, the making material of adhesion layer include Titanium, and the making material of lead and exciting electrode includes metal platinum.
Further, the thickness of thin film electrode array is 5~20 μm, and the electrode of the thin film electrode array has 3-D out
Platform pattern, height of projection is in 1~15 μ m
It is another object of the present invention to propose a kind of adding for MEMS thin film electrode arrays that can be applied to artificial cochlea
Work method.
To achieve these goals, another aspect of the present invention discloses a kind of MEMS thin-film electros that can be applied to artificial cochlea
The processing method of pole array, the thin film electrode array are to include can be applied to artitificial ear described in any of the above-described embodiment
The MEMS thin film electrode arrays of snail, including：S1：Standard cleaning is carried out to silicon chip, sputtered aluminum is as sacrificial layer material；S2：Institute
State spin coating positive photoresist and photoetching on aluminium；S3：Deposit first layer Parylene；S4：In the first layer Parylene
It is upper to utilize negtive photoresist stripping technology patterned metal layer.S5：Deposit second layer Parylene；S6：In second strata to two
Spin coating positive photoresist and photoetching on toluene.S7：Etched using oxygen plasma resist remover, until completely sudden and violent in electrode area platinum
Dew；S8：Spin coating thickness positive photoresist and photoetching；S9：Lost using oxygen plasma etch machine engraving, until the aluminium outside device edge is sacrificial
Domestic animal layer is completely exposed；S10：Removed photoresist and discharged, form thin film electrode array.
The processing method of the MEMS thin film electrode arrays that can be applied to artificial cochlea of the embodiment of the present invention, electrode pass through light
Photoresist forms three-dimensional boss pattern, using new intermetallic composite coating side as mould in a manner of low cost and high technology stability
Formula, by way of a step stripping, form lead and electrode.Using new device delivery mode, release process complexity is reduced,
Add process yield.
In addition, the processing side of the MEMS thin film electrode arrays according to the above embodiment of the present invention that can be applied to artificial cochlea
Method can also have technical characteristic additional as follows：
Further, in step s 2, by using photoresist as mould, and sunk using the good conformal of Parylene
Product feature, forms boss pattern on mould.
Further, in step s 4, peeled off by negtive photoresist, form titanium/platinum metal layer, thin film electrode array minimum feature
It it is 15 μm with cabling spacing.
Further, in step S6 into S9, the etching to Parylene is completed using two step photoetching, respectively exposure electricity
Pole position and device edge, after second of photoetching during graphical device edge, photoresist is played in etching with discharging
The effect of guard electrode material in journey.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment
Substantially and it is readily appreciated that, wherein：
Fig. 1 is the structure of the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea
Figure；
Fig. 2 is the technique stream of the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea
Cheng Tu；
Fig. 3 is the technique stream of the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea
Journey explanation figure；
Fig. 4 is that the device of the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea is real
Thing figure；
Fig. 5 is the scanning electricity of the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea
Mirror figure；
Fig. 6 is the scanning electron microscope (SEM) photograph of electrode according to an embodiment of the invention.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
Below in conjunction with the accompanying drawing description MEMS thin film electrode arrays that can be applied to artificial cochlea according to embodiments of the present invention
And processing method.
Fig. 1 is the structure of the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea
Figure.
As shown in figure 1, the MEMS thin film electrode arrays according to an embodiment of the invention that can be applied to artificial cochlea, bag
Include：In conjunction with shown in Fig. 5, thin film electrode array uses linear structure, in conjunction with shown in Fig. 6, electrode shape in thin film planar
For circle, there is convex shape perpendicular to in-plane electrode.The size of electrode swashs according to artificial cochlea in thin film electrode array
Current requirements and electrode material charge density safety value is encouraged to design, wherein, with reference to shown in Fig. 1 (c), the μ of electrode centers spacing >=150
M, each electrode exposed area diameter >=70 μm.
In certain embodiments, with reference to shown in Fig. 1 (c), making the material of thin film electrode array includes：Substrate and separation layer
Making material include Parylene (Parylene), such as c-type Parylene (Parylene C), the making of adhesion layer
Material includes Titanium (Titantum, Ti), and the making material of lead and exciting electrode includes metal platinum (Platinum, Pt).
It has the charge density upper limit of good bio-compatibility and safety.
In conjunction with shown in Fig. 1 (a) and Fig. 4, parylene film electrode array length can be 16mm, big in cochlea
It can be 360 ° to cause corner.The top cross-sectional width of electrod-array can be 0.7mm, and bottom cross-sectional width can be
1.2mm.Electrod-array can be distributed 16 electrodes, in different electrode design parameters, electrode cable width >=15 μm, between wire
Away from >=15 μm.
In certain embodiments, the thickness of thin film electrode array is 5~20 μm, and the electrode of the thin film electrode array has
There is three-dimensional boss pattern, height of projection is in 1~15 μ m.
With reference to shown in Fig. 2 and Fig. 3, the technique of film processed electrod-array, wherein, thin film electrode array is to include above-mentioned
Described in one embodiment based on the micro-machined thin film electrode arrays of MEMS, including：
S1：Standard cleaning is carried out to silicon chip, sputtered aluminum is as sacrificial layer material.
As an example, with reference to shown in Fig. 2 (a), device fabrication carries out standard cleaning, Ran Hou to four cun of silicon chips first
Its front sputtering 500nm aluminium is as sacrificial layer material.500nm thickness can ensure that the surface smoothness of aluminium is also easy to resulting devices
Undercutting of the corrosive liquid to sacrificial layer material during release.
S2：Spin coating positive photoresist and photoetching on aluminium.
Specifically, in step s 2, by using photoresist as mould, and sunk using the good conformal of Parylene
Product feature, forms boss pattern on mould.
As an example, with reference to shown in Fig. 2 (b) and Fig. 2 (c), hot plate 110 DEG C of drying 3mins, the μ of spin coating 2.2 on aluminium
M (700rpm, 9s/2000rpm, 40s) positive photoresist, wherein, the model of positive photoresist can be AZ601, expose, and show
Shadow, nitrogen gun are dried up, and moulds of the 5mins as electrode is dried after 110 DEG C of hot plate.
S3：Deposit first layer Parylene.
As an example, as shown in Fig. 2 (d), silicon chip is placed in (the Specialty Coating of PDS 2010
System, Indianapolis, IN, U.S) equipment vacuum intracavitary, substrate of the 5 μm of c-type Parylenes of deposition as device
Layer.
S4：Negtive photoresist stripping technology patterned metal layer is utilized on the first layer Parylene.
In certain embodiments, in step s 4, peeled off by negtive photoresist, form titanium/platinum metal layer, thin film electrode array is most
Small line width and cabling spacing are 15 μm.
As an example, as shown in Fig. 2 (e), Fig. 2 (f), Fig. 2 (g), Fig. 2 (h), 110 DEG C of hot plate dries 3mins,
2.7 μm of spin coating (700rpm, 9s/3000rpm 40s) negative photoresist on first layer Parylene, can be NR9-
3000PY, 110 DEG C of 1min 30s of front baking, exposure, 110 DEG C of 1min 45s of middle baking, development, nitrogen gun drying, do not dry afterwards, utilize oxygen
Plasma degumming machine gluing 30s (500W, 50sccm), sputtered titanium 20nm, platinum 200nm, soaked afterwards in RR41 strippers
20mins completes metal-stripping.
S5：Deposit second layer Parylene.
As an example, as shown in Fig. 2 (i), using oxygen plasma resist remover gluing 30s (500W, 50sccm) and to the greatest extent
Silicon chip is again placed in the equipment vacuum intracavitary of PDS 2010, separation layer of the 1 μm of c-type Parylene of deposition as device soon.
S6：Spin coating positive photoresist and photoetching on second layer Parylene.
As an example, as shown in Fig. 2 (j), Fig. 2 (k), 110 DEG C of hot plate dries 3mins, spin coating positive photoresist
AZ601 2.2 μm (700rpm, 9s/2000rpm, 40s), expose, development, nitrogen gun drying, dry 5mins after 110 DEG C of hot plate.
S7：Etched using oxygen plasma resist remover, until being completely exposed in electrode area platinum.
As an example, as shown in Fig. 2 (l), Parylene 20mins is etched using oxygen plasma resist remover
(500W, 50sccm), until being completely exposed in electrode area platinum, it need not be removed photoresist after the completion of etching.
S8：Spin coating thickness positive photoresist and photoetching.
As an example, as shown in Fig. 2 (m), Fig. 2 (n), 110 DEG C of hot plate dries 3mins, spin coating positive photoresist
(700rpm, 9s/3000rpm, 40s, twice spin coating, pre-bake temperature are 95 DEG C to 13.5 μm of AZ4620, time 9mins/
12mins), expose, development, dry 10mins after 110 DEG C of hot plates.
S9：Lost using oxygen plasma etch machine engraving, until the aluminum sacrificial layer outside device edge is completely exposed.
As an example, as shown in Fig. 2 (o), Inductively Coupled Plasma (ICP) oxygen plasma is utilized
Body etching machine etching Parylene 5 times, each 2mins (400W/200W, 20sccm 1Pa).Until the aluminium outside device edge
Sacrifice layer is completely exposed.
It is emphasized that place step S6 completes the etching to Parylene into S9, using two step photoetching, respectively
Exposure electrode position and device edge, after second of photoetching during graphical device edge, photoresist play in etching and
The effect of guard electrode material during release.Specifically, the etching of Parylene is carried out in two steps in technological process,
As shown in Fig. 2 (o), the photoresist of electrode surface is avoided that is exposed to metal surface in oxygen plasma environment for a long time, avoids
Potential destruction of the bombardment by ions to electrode material, meanwhile, as shown in Fig. 2 (p), photoresist be able to can be protected in dispensing device
Electrode surface, and dissolved while release.Entirety is opened, although this design adds processing step, is improved
Technology stability and yield rate.
S10：Removed photoresist and discharged, form thin film electrode array.
As an example, as shown in Fig. 2 (p), by silicon chip as 20mins in stripper, after device comes off, using anti-
Sour tweezers, gripping device afterbody are placed in cleaning in deionized water, and the device electrode exposure after cleaning is face-up, is placed in filter paper and dries in the air
It is dry.
Further, the device after release, be placed in 150 DEG C of oxygen-free environment baking oven heat and dry 12h, enhancing parylene layer it
Between adhesiveness, and curing structure.
Relative to Traditional Man cochlear electrode array, the MEMS thin-film electros that can be applied to artificial cochlea of the embodiment of the present invention
The processing method of pole array, improves process efficiency, reduces process costs.In addition other membrane electrode techniques are compared, are originally set
The electrode of meter is used as mould by photoresist, and three-dimensional boss pattern is formed in a manner of low cost and high technology stability, uses
New intermetallic composite coating mode, by way of a step stripping, lead and electrode are formed, using new device delivery mode, is reduced
Release process complexity, adds process yield.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the invention, " multiple " are meant that at least two, such as two, three
It is individual etc., unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be machinery
Connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, can be two elements
Internal connection or the interaction relationship of two elements, limited unless otherwise clear and definite.For the ordinary skill people of this area
For member, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the different embodiments or example and the feature of different embodiments or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (7)
- A kind of 1. MEMS thin film electrode arrays that can be applied to artificial cochlea, it is characterised in that including：The thin film electrode array uses linear structure, and electrode shape is circle in thin film planar, perpendicular to thin film planar side There is raised pattern to electrode；The size of electrode is according to the requirement of artificial cochlea's exciting current and electrode material charge density safety value in thin film electrode array Design, wherein, electrode centers spacing >=150 μm, each electrode exposed area diameter >=70 μm.
- 2. the MEMS thin film electrode arrays according to claim 1 that can be applied to artificial cochlea, it is characterised in that make institute Stating the material of thin film electrode array includes：The making material of substrate and separation layer includes Parylene (Parylene), adhesion The making material of layer includes Titanium (Titanium, Ti), and the making material of lead and exciting electrode includes metal platinum (Platinum, Pt).
- 3. the MEMS thin film electrode arrays according to claim 1 that can be applied to artificial cochlea, it is characterised in that thin-film electro The thickness of pole array is 5~20 μm, and the electrode of the thin film electrode array has a three-dimensional boss pattern, height of projection 1~ 15 μ ms.
- A kind of 4. processing method for the MEMS thin film electrode arrays that can be applied to artificial cochlea, it is characterised in that the thin-film electro Pole array is to include the MEMS thin film electrode arrays that can be applied to artificial cochlea described in the claims any one of 1-3, bag Include：S1：Standard cleaning is carried out to silicon chip, sputtered aluminum is as sacrificial layer material；S2：Spin coating positive photoresist and photoetching on the aluminium；S3：Deposit first layer Parylene；S4：Negtive photoresist stripping technology patterned metal layer is utilized on the first layer Parylene；S5：Deposit second layer Parylene；S6：Spin coating positive photoresist and photoetching on the second layer Parylene.S7：Etched using oxygen plasma resist remover, until being completely exposed in electrode area platinum；S8：Spin coating positive photoresist and photoetching；S9：Lost using oxygen plasma etch machine engraving, until the aluminum sacrificial layer outside device edge is completely exposed；S10：Removed photoresist and discharged, form thin film electrode array.
- 5. the processing method of the MEMS thin film electrode arrays according to claim 4 that can be applied to artificial cochlea, its feature It is, in step s 2, by using photoresist as mould, and using the good conformal deposition feature of Parylene, in mould Boss pattern is formed on son.
- 6. the processing method of the MEMS thin film electrode arrays according to claim 4 that can be applied to artificial cochlea, its feature It is, in step s 4, is peeled off by negtive photoresist, forms titanium/platinum metal layer, thin film electrode array minimum feature and cabling spacing are 15μm。
- 7. the processing method of the MEMS thin film electrode arrays according to claim 4 that can be applied to artificial cochlea, its feature It is, place step S6 completes the etching to Parylene into S9, using two step photoetching, exposes electrode position and device respectively Part edge, after second of photoetching during graphical device edge, photoresist, which plays, to be etched with protecting electricity during release The effect of pole material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710613928.0A CN107434239A (en) | 2017-07-25 | 2017-07-25 | A kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710613928.0A CN107434239A (en) | 2017-07-25 | 2017-07-25 | A kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107434239A true CN107434239A (en) | 2017-12-05 |
Family
ID=60459664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710613928.0A Pending CN107434239A (en) | 2017-07-25 | 2017-07-25 | A kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107434239A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108261605A (en) * | 2018-02-13 | 2018-07-10 | 山东大学 | A kind of flexible single-layer conductive micro structures artificial cochlea electrode and production method |
| CN109095435A (en) * | 2018-08-02 | 2018-12-28 | 北京大学 | A kind of three-dimensional all-metal micro-cavity structure surface phasmon array-processing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101149559A (en) * | 2007-10-18 | 2008-03-26 | 上海交通大学 | Method for preparing ball-shaped bump biological microelectrode array |
| US20100145422A1 (en) * | 2008-11-14 | 2010-06-10 | The Regents Of The University Of Michigan | Method for manufacturing an implantable electronic device |
| CN101884530A (en) * | 2010-07-14 | 2010-11-17 | 中国科学院半导体研究所 | Flexible probe electrode used for recording electric signal of neural activity and implanting tool thereof |
| CN103829938A (en) * | 2012-11-26 | 2014-06-04 | 中国科学院电子学研究所 | Microelectrode array implantation type chip and manufacturing method thereof |
| CN104548335A (en) * | 2014-12-26 | 2015-04-29 | 武汉格林泰克科技有限公司 | Implantable flexible array electrode used for organism and preparation method of implantable flexible array electrode |
| US20170080216A1 (en) * | 2014-05-28 | 2017-03-23 | Koninklijke Philips N.V. | Method of manufacturing a flexible conductive track arrangement, flexible conductive track arrangement and neurostimulation system |
-
2017
- 2017-07-25 CN CN201710613928.0A patent/CN107434239A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101149559A (en) * | 2007-10-18 | 2008-03-26 | 上海交通大学 | Method for preparing ball-shaped bump biological microelectrode array |
| US20100145422A1 (en) * | 2008-11-14 | 2010-06-10 | The Regents Of The University Of Michigan | Method for manufacturing an implantable electronic device |
| CN101884530A (en) * | 2010-07-14 | 2010-11-17 | 中国科学院半导体研究所 | Flexible probe electrode used for recording electric signal of neural activity and implanting tool thereof |
| CN103829938A (en) * | 2012-11-26 | 2014-06-04 | 中国科学院电子学研究所 | Microelectrode array implantation type chip and manufacturing method thereof |
| US20170080216A1 (en) * | 2014-05-28 | 2017-03-23 | Koninklijke Philips N.V. | Method of manufacturing a flexible conductive track arrangement, flexible conductive track arrangement and neurostimulation system |
| CN104548335A (en) * | 2014-12-26 | 2015-04-29 | 武汉格林泰克科技有限公司 | Implantable flexible array electrode used for organism and preparation method of implantable flexible array electrode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108261605A (en) * | 2018-02-13 | 2018-07-10 | 山东大学 | A kind of flexible single-layer conductive micro structures artificial cochlea electrode and production method |
| CN109095435A (en) * | 2018-08-02 | 2018-12-28 | 北京大学 | A kind of three-dimensional all-metal micro-cavity structure surface phasmon array-processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108751116B (en) | Warping type flexible electrode for bioelectricity recording or electric stimulation and preparation method thereof | |
| CN100534404C (en) | Artificial retina neural flexible microelectrode array chips and processing method thereof | |
| EP2587994B1 (en) | Helical core ear implant electrode | |
| EP3148634B1 (en) | Method of manufacturing a flexible conductive track arrangement, flexible conductive track arrangement and neurostimulation system | |
| US20150267314A1 (en) | Cochlear electrode array | |
| EP2525867B1 (en) | Electrode array and method of fabrication | |
| WO2018209872A1 (en) | Multi-layer, flexible artificial auditory nerve stimulation electrode and manufacturing method thereof | |
| CN105854183B (en) | A kind of acoustic-electric mixed excitation artificial cochlear implant actuating station | |
| CN107434239A (en) | A kind of MEMS thin film electrode arrays that can be applied to artificial cochlea and processing method | |
| Tooker et al. | Biocomplatible parylene neurocages | |
| US20200360685A1 (en) | Flexible single-sided conductive microstructure artificial cochlea electrode and production method | |
| US8165697B2 (en) | Electrode-bearing guide and cochlear implant | |
| CN106182975A (en) | A kind of artificial cochlea electrode based on liquid metal and preparation method thereof | |
| JP4221357B2 (en) | Electrode structure, manufacturing method and use thereof | |
| CN109273367B (en) | The manufacturing method of metallic film conducting wire | |
| US10639472B2 (en) | Process for manufacturing an implant for focal electrical stimulation of a nervous structure | |
| EP3017843B1 (en) | Transmodiolar electrode array and a manufacturing method | |
| CN101623537A (en) | Preparation method of spherical flexible microelectrode | |
| JP2011160984A (en) | Visual sense regeneration assisting apparatus | |
| Choi et al. | Highly inclined electrodeposited metal lines using an excimer laser patterning technique | |
| KR20030035758A (en) | Flexible electrode equipment for cochlear implant | |
| KR101247660B1 (en) | Method for fabricating frequency separating apparatus for cochlear implant using growing nanowires | |
| CN102569107A (en) | Preparation method of elastic contact interconnection structure of chip and electrode | |
| WO2003041092A1 (en) | Thin flexible conductors | |
| Volckaerts et al. | Technology developments to initiate a next generation of cochlear implants |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171205 |