CN101623537A - Preparation method of spherical flexible microelectrode - Google Patents
Preparation method of spherical flexible microelectrode Download PDFInfo
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- CN101623537A CN101623537A CN200910055955A CN200910055955A CN101623537A CN 101623537 A CN101623537 A CN 101623537A CN 200910055955 A CN200910055955 A CN 200910055955A CN 200910055955 A CN200910055955 A CN 200910055955A CN 101623537 A CN101623537 A CN 101623537A
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Abstract
The invention discloses a preparation method of a spherical flexible microelectrode, which belongs to the field of biomedical engineering. The preparation method comprises the steps of preparing a protruding cylindrical photoresist on a substrate, then forming a spherical protruding point by carrying out high-temperature hot melting reflux on the photoresist, depositing a layer of polymer thin film on the substrate with the spherical protruding point, depositing a metal thin film on the polymer thin film and graphing, forming a metal electrode point and a guide wire, further depositing the polymer thin film on a metal electrode layer, using different masks for graphing electrode points with different exposed opening shapes and opening degrees, exposing a welding point and obtaining the spherical flexible microelectrode with different opening shapes and opening degrees. The different opening shapes and the degrees of the microelectrode prepared by the preparation method can meet the demands of different physiological tissues on different current densities and be conductive to recovering functions of the physiological tissues after stimulation by the microelectrode.
Description
Technical field
What the present invention relates to is a kind of microelectrode preparation method of biomedical engineering field, specifically is a kind of preparation method of spherical flexible microelectrode.
Background technology
The local nerve paralysis causes the forfeiture of some position physiological function of human body as blind, apoplexy etc.Secular suitable stimulation helps to help the patient to recover physiological function to nerve to use microelectrode.Being based on based on the nerve prosthesis of nerve stimulation and treatment at present uses microelectrode that central authorities and bypass nervous system are carried out secular stimulation.Its application comprises the upper and lower extremities prosthese, the bladder prosthese, retina and cerebral cortex prosthese, cochlea and auditory brainstem prosthese, retina and cerebral cortex vision prosthesis, cortex writes down cognitive sub controlling unit, vagal stimulation treatment epilepsy and depression, deep brain stimulation treatment essential tremor, parkinsonism, myodystonia etc.
In various prosthesis systems, being used for the microelectrode that N﹠M stimulates is a very important part, and the performance of electrode is directly connected to the effect of stimulation of electric pulse to neurocyte.At present, the electrode that being used for neurocyte stimulates has multiple resemblance, and is hemispherical as column, tip-like.Different physiological tissues required different electric current density when electricity irritation, and there is material impact in the geometric jacquard patterning unit surface zone (GSA) of microelectrode to electric current density, so single electrode can't satisfy the requirement of different tissues to different electric current densities with the contact surface geometric jacquard patterning unit surface zone of physiological tissue.
Find by prior art documents, Jian Wu, William C.Tang is at Nano/MicroEngineered and Molecular Systems, 2007.NEMS ' 07.2nd IEEE InternationalConference on 16-19 Jan.2007 Page (s): write articles " Microfabrication ofHigh-Density Microelectrode Arrays for Peripheral Intraneural Applications " on the 1085-1088.(" microfabrication high-density microelectrode permutation is application in the nerve in peripheral " Nano/micron engineering and molecular system international conference).Microelectrode opening shape and the opening angle mentioned in this article are single, are unfavorable for the requirement of required different electric current densities when satisfying different physiological tissues stimulates, and are unfavorable for the recovery of post-stimulatory physiological function.
Summary of the invention
The present invention is directed to the prior art above shortcomings, a kind of preparation method of spherical flexible microelectrode is provided, required different electric current densities when satisfying the stimulation of different physiological tissues in the time of can making microelectrode carry out electricity irritation in vivo, thereby improve effect of stimulation, help the recovery of tissue physiology's function.
The present invention is achieved by the following technical solutions: the cylindric photoresist that at first prepares projection on substrate, form spherical salient point by high temperature hot melt backflow photoresist then, having deposition one layer of polymeric thin film on the substrate of spherical salient point, depositing metal films and graphical metal electrode point and the lead of forming on thin polymer film, deposited polymer thin film on metal electrode layer again, use different mask plate patternsization to expose the opening shape electrode points different with opening angle, and expose solder joint, obtain having the hemisphere jut flexible micro-electrode of different openings shape and opening angle.
The present invention includes following steps:
The first step, cleaning silicon chip substrate and on silicon chip substrate splash-proofing sputtering metal as adhesion coating;
Described metal layer thickness is
Its effect is to guarantee that follow-up photoresist and substrate can be good at adhering to, and prevents that subsequent technique photoresist small column from coming off.Splash-proofing sputtering metal will consider that follow-up hot melt refluxing stage is not by high-temperature oxydation simultaneously.
Second the step, at layer on surface of metal spin coating photoresist, make the cylindrical projection structure by photoetching treatment then;
Described spin coating is meant that described photoresist was AZ4620 with 700 rev/mins speed spin coating photoresist 60 seconds.
Described photoetching treatment is meant: exposed in the position that scribbles photoresist, adopt the AZ-400K developing liquid developing to remove the photoresist of exposure area in 180 seconds then.
The 3rd silicon chip substrate that goes on foot, will scribble photoresist places baking oven to melt photoresist, makes the photoresist salient point of the surface formation hemispherical dome structure of silicon chip substrate;
Described fusing photoresist is meant oven temperature is set at 175 ℃～185 ℃ that fusing time is 20～30 minutes.
The 4th step, at the surface deposition Parylene of photoresist salient point the lapping of going to the bottom as the microelectrode array of preparation, make the integument of going to the bottom;
The thickness of the described integument of going to the bottom is 5～20 μ m.
The 5th the step, on the integument of going to the bottom sputter gold, platinum or yttrium oxide element electrode layer, and carry out the secondary spin coating on the surface of electrode layer, exposed in the position that scribbles photoresist then, and the photoresist of removal exposure area, and adopt ion milling process to remove the metal level that exposes, make some electrode points and lead;
The sputter thickness of described gold, platinum or yttrium oxide element electrode layer is 0.3～0.5 μ m.
Described secondary spin coating is meant with 3000 rev/mins speed spin coating photoresist 60 seconds.
Described removal exposure area is meant adopted the AZ-400K developing liquid developing 150 seconds.
Described ion milling process is removed the metal level that exposes and is meant employing ion beam milling machine engraving erosion 5～20 minutes.
The 6th step, at the upper base integument of electrode points and conductive line surfaces deposition Parylene as the microelectrode array of preparation;
The thickness of described upper base integument is 5～20 μ m.
The 7th step, spin coating photoresist use different mask plate patternsization to expose the pairing top of the opening shape electrode points different with opening angle window, and etch polymers is exposed electrode tip;
Described mask version is shaped as circle, rectangle, triangle and annular.
Described opening angle is 0 °～90 °.
Described spin coating photoresist is meant that spin coating photoresist AZ4620 with 3000 rev/mins rotating speed spin coating 60 seconds, develops after exposure, developing time is 150 seconds.
Etch polymers is carried out in being meant with reactive ion etching of described etch polymers.
The 8th step, removal photoresist are peeled off electrode from substrate, discharge electrode, make flexible micro-electrode.
Described removal photoresist is meant and adopted the AZ-400K developing liquid developing 150 seconds.
Compared with prior art, the present invention prepare the hemispherical microelectrode of gained increased electrode and neurocyte contact area, can make the more abundant of electrode and cells contacting, reduced the impedance between electrode and the target; The present invention simultaneously prepares gained microelectrode different openings shape and angle, satisfies the demand of different physiological tissues to different electric current densities, helps the recovery that microelectrode stimulates back physiological tissue function.
Description of drawings
Fig. 1 is embodiment 1 sketch map.
Fig. 2 is embodiment 2 sketch maps.
Fig. 3 is embodiment 3 sketch maps.
Fig. 4 is embodiment 4 sketch maps.
The specific embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment one: as shown in Figure 1, present embodiment comprises: metal electrode 1 and polymeric layer 2, wherein: metal electrode 1 external packets of hemisphere shape is covered with polymeric layer 2, is provided with top window 3 on polymeric layer 2.
The diameter of described metal electrode 1 is 50 μ m, and this metal electrode is that gold is made; Described polymeric layer 2 is a Parylene.
Present embodiment is prepared by following steps:
The first step, cleaning silicon chip substrate, sputter chromium on silicon chip substrate is made thickness and is
Metal level;
Second step, at layer on surface of metal with 700 rev/mins speed AZ4620 photoresist 60 seconds, expose then, and adopt the AZ-400K developing liquid developing to remove the exposure area photoresist in 180 seconds, obtain miniature cylinder;
The 3rd silicon chip substrate that goes on foot, will scribble photoresist places 180 ℃ of baking ovens fusings 25 minutes, makes the photoresist salient point of the surface formation hemispherical dome structure of silicon chip substrate;
The 4th step, be the parylene layer of 5～20 μ m, make the integument of going to the bottom at the surface deposition thickness of photoresist salient point;
The 5th the step, sputter thickness is the gold element electrode layer of 0.5 μ m on the integument of going to the bottom, and carried out secondary spin coating photoresist 60 seconds with 3000 rev/mins speed on the surface of electrode layer, exposed in the position that scribbles photoresist then, the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made electrode points and lead;
Described photoresist is AZ4620.
The 6th step, electrode points and conductive line surfaces once more deposit thickness be the parylene layer of 5～20 μ m, as the upper base integument of microelectrode array;
The 7th step, carried out three spin coating photoresists 60 seconds with 3000 rev/mins speed on the surface of upper base integument, adopt the mask version to be exposed in the position that scribbles photoresist then, and the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made the top window;
Described photoresist is AZ4620.
The 8th step, by etch processes remove the upper base integument successively and the integument of going to the bottom to expose electrode tip, adopt the AZ-400K developer solution to remove photoresist at last, and spherical flexible microelectrode peeled off from silicon chip substrate.
Embodiment two: as shown in Figure 2, present embodiment comprises: metal electrode 1 and polymeric layer 2, wherein: metal electrode 1 external packets of hemisphere shape is covered with polymeric layer 2, is provided with top window 3 on polymeric layer 2.
The diameter of described metal electrode 1 is 50 μ m, and this metal electrode is that gold is made; Described polymeric layer 2 is a Parylene; Window 3 used mask versions in described top are rectangle.
Present embodiment is prepared by following steps:
The first step, cleaning silicon chip substrate, sputter chromium on silicon chip substrate is made thickness and is
Metal level;
Second step, at layer on surface of metal with 700 rev/mins speed AZ4620 photoresist 60 seconds, expose then, and adopt the AZ-400K developing liquid developing to remove the exposure area photoresist in 180 seconds, obtain miniature cylinder;
The 3rd silicon chip substrate that goes on foot, will scribble photoresist places 180 ℃ of baking ovens fusings 25 minutes, makes the photoresist salient point of the surface formation hemispherical dome structure of silicon chip substrate;
The 4th step, be the parylene layer of 5～20 μ m, make the integument of going to the bottom at the surface deposition thickness of photoresist salient point;
The 5th the step, sputter thickness is the gold element electrode layer of 0.5 μ m on the integument of going to the bottom, and carried out secondary spin coating photoresist 60 seconds with 3000 rev/mins speed on the surface of electrode layer, exposed in the position that scribbles photoresist then, the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made electrode points and lead;
Described photoresist is AZ4620.
The 6th step, electrode points and conductive line surfaces once more deposit thickness be the parylene layer of 5～20 μ m, as the upper base integument of microelectrode array;
The 7th step, carried out three spin coating photoresists 60 seconds with 3000 rev/mins speed on the surface of upper base integument, adopt the mask version to be exposed in the position that scribbles photoresist then, and the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made the top window;
Described photoresist is AZ4620.
The 8th step, by etch processes remove the upper base integument successively and the integument of going to the bottom to expose electrode tip, adopt the AZ-400K developer solution to remove photoresist at last, and spherical flexible microelectrode peeled off from silicon chip substrate.
Embodiment three: as shown in Figure 3, present embodiment comprises: metal electrode 1 and polymeric layer 2, wherein: metal electrode 1 external packets of hemisphere shape is covered with polymeric layer 2, is provided with top window 3 on polymeric layer 2.
The diameter of described metal electrode 1 is 50 μ m, and this metal electrode is that gold is made; Described polymeric layer 2 is a Parylene.
Present embodiment is prepared by following steps:
The first step, cleaning silicon chip substrate, sputter chromium on silicon chip substrate is made thickness and is
Metal level;
Second step, at layer on surface of metal with 700 rev/mins speed AZ4620 photoresist 60 seconds, expose then, and adopt the AZ-400K developing liquid developing to remove the exposure area photoresist in 180 seconds, obtain miniature cylinder;
The 3rd silicon chip substrate that goes on foot, will scribble photoresist places 180 ℃ of baking ovens fusings 25 minutes, makes the photoresist salient point of the surface formation hemispherical dome structure of silicon chip substrate;
The 4th step, be the parylene layer of 5～20 μ m, make the integument of going to the bottom at the surface deposition thickness of photoresist salient point;
The 5th the step, sputter thickness is the gold element electrode layer of 0.5 μ m on the integument of going to the bottom, and carried out secondary spin coating photoresist 60 seconds with 3000 rev/mins speed on the surface of electrode layer, exposed in the position that scribbles photoresist then, the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made electrode points and lead;
Described photoresist is AZ4620.
The 6th step, electrode points and conductive line surfaces once more deposit thickness be the parylene layer of 5～20 μ m, as the upper base integument of microelectrode array;
The 7th step, carried out three spin coating photoresists 60 seconds with 3000 rev/mins speed on the surface of upper base integument, adopt the mask version to be exposed in the position that scribbles photoresist then, and the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made the top window;
Described photoresist is AZ4620.
The 8th step, by etch processes remove the upper base integument successively and the integument of going to the bottom to expose electrode tip, adopt the AZ-400K developer solution to remove photoresist at last, and spherical flexible microelectrode peeled off from silicon chip substrate.
Embodiment four: as shown in Figure 4, present embodiment comprises: metal electrode 1 and polymeric layer 2, wherein: metal electrode 1 external packets of hemisphere shape is covered with polymeric layer 2, is provided with top window 3 on polymeric layer 2.
The diameter of described metal electrode 1 is 50 μ m, and this metal electrode is that gold is made; Described polymeric layer 2 is a Parylene;
The opening angle that present embodiment prepares the gained microelectrode is that α is 45 °, and described microelectrode opening angle α is meant the angle of the centre of sphere line of the covering arc two-end-point of polymeric layer and microelectrode.
Present embodiment is prepared by following steps:
The first step, cleaning silicon chip substrate, sputter chromium on silicon chip substrate is made thickness and is
Metal level;
Second step, at layer on surface of metal with 700 rev/mins speed AZ4620 photoresist 60 seconds, expose then, and adopt the AZ-400K developing liquid developing to remove the exposure area photoresist in 180 seconds, obtain miniature cylinder;
The 3rd silicon chip substrate that goes on foot, will scribble photoresist places 180 ℃ of baking ovens fusings 25 minutes, makes the photoresist salient point of the surface formation hemispherical dome structure of silicon chip substrate;
The 4th step, be the parylene layer of 5～20 μ m, make the integument of going to the bottom at the surface deposition thickness of photoresist salient point;
The 5th the step, sputter thickness is the gold element electrode layer of 0.5 μ m on the integument of going to the bottom, and carried out secondary spin coating photoresist 60 seconds with 3000 rev/mins speed on the surface of electrode layer, exposed in the position that scribbles photoresist then, the photoresist that adopts the AZ-400K developing liquid developing to remove the exposure area in 150 seconds is made electrode points and lead;
Described photoresist is AZ4620.
The 6th step, electrode points and conductive line surfaces once more deposit thickness be the parylene layer of 5～20 μ m, as the upper base integument of microelectrode array;
The 7th step, carried out three spin coating photoresists 60 seconds with 3000 rev/mins speed on the surface of upper base integument, adopt the mask version to be exposed in the position that scribbles photoresist then, and adopt the photoresist of AZ-400K developing liquid developing removal in 150 seconds exposure area to make the top window, and make microelectrode have the certain opening angle;
Described photoresist is AZ4620.
The 8th step, by etch processes remove the upper base integument successively and the integument of going to the bottom to expose electrode tip, adopt the AZ-400K developer solution to remove photoresist at last, and spherical flexible microelectrode peeled off from silicon chip substrate.
Claims (11)
1, a kind of preparation method of spherical flexible microelectrode is characterized in that, may further comprise the steps:
The first step, cleaning silicon chip substrate and on silicon chip substrate splash-proofing sputtering metal as adhesion coating;
Second the step, at layer on surface of metal spin coating photoresist, make the cylindrical projection structure by photoetching treatment then;
The 3rd silicon chip substrate that goes on foot, will scribble photoresist places baking oven to melt photoresist, makes the photoresist salient point of the surface formation hemispherical dome structure of silicon chip substrate;
The 4th step, at the surface deposition Parylene of photoresist salient point the lapping of going to the bottom as the microelectrode array of preparation, make the integument of going to the bottom;
The 5th the step, on the integument of going to the bottom sputter gold element electrode layer, and carry out the secondary spin coating on the surface of electrode layer, and exposed in the position that scribbles photoresist then, remove the photoresist of exposure area, and adopt ion milling process to remove the metal level that exposes, make some electrode points and lead;
The 6th step, at the upper base integument of electrode points and conductive line surfaces deposition Parylene as the microelectrode array of preparation;
The 7th step, spin coating photoresist use different mask plate patternsization to expose the pairing top of the opening shape electrode points different with opening angle window, and etch polymers is exposed electrode tip;
The 8th step, removal photoresist are peeled off electrode from substrate, discharge electrode, make flexible micro-electrode.
2, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described microelectrode opening angle is meant the angle of the centre of sphere line of the covering arc two-end-point of polymeric layer and microelectrode, and this opening angle is 0 °～90 °.
3, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described metal layer thickness is
Its effect is to guarantee that follow-up photoresist and substrate can be good at adhering to, and prevents that subsequent technique photoresist small column from coming off.Splash-proofing sputtering metal will consider that follow-up hot melt refluxing stage is not by high-temperature oxydation simultaneously.
4, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described spin coating is meant that described photoresist was AZ4620 with 700 rev/mins speed spin coating photoresist 60 seconds.
5, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described photoetching treatment is meant: exposed in the position that scribbles photoresist, adopt the AZ-400K developing liquid developing to remove the photoresist of exposure area in 180 seconds then.
6, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described spin coating photoresist is meant that spin coating photoresist AZ4620 with 3000 rev/mins rotating speed spin coating 60 seconds, develops after exposure, and developing time is 150 seconds.
7, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described fusing photoresist is meant oven temperature is set at 175 ℃～185 ℃ that fusing time is 20～30 minutes.
8, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, the thickness of the described integument of going to the bottom is 5～20 μ m.
9, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, the sputter thickness of described gold element electrode layer is 0.3～0.5 μ m.
10, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, described secondary spin coating is meant with 3000 rev/mins speed spin coating photoresist 60 seconds.
11, the preparation method of spherical flexible microelectrode according to claim 1 is characterized in that, the thickness of described upper base integument is 5～20 μ m.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569107A (en) * | 2011-12-15 | 2012-07-11 | 上海交通大学 | Preparation method of elastic contact interconnection structure of chip and electrode |
| CN105675682A (en) * | 2015-12-28 | 2016-06-15 | 中国人民大学 | Size-controllable nanowire microelectrode, preparation method and application thereof |
| CN104055598B (en) * | 2014-06-25 | 2016-09-07 | 上海交通大学 | Implantable flexible nervus of piscine organism robot and preparation method thereof |
| CN112675423A (en) * | 2020-12-23 | 2021-04-20 | 北京印刷学院 | Electric stimulation microelectrode and preparation method thereof |
-
2009
- 2009-08-06 CN CN200910055955A patent/CN101623537A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569107A (en) * | 2011-12-15 | 2012-07-11 | 上海交通大学 | Preparation method of elastic contact interconnection structure of chip and electrode |
| CN102569107B (en) * | 2011-12-15 | 2014-04-30 | 上海交通大学 | Preparation method of elastic contact interconnection structure of chip and electrode |
| CN104055598B (en) * | 2014-06-25 | 2016-09-07 | 上海交通大学 | Implantable flexible nervus of piscine organism robot and preparation method thereof |
| CN105675682A (en) * | 2015-12-28 | 2016-06-15 | 中国人民大学 | Size-controllable nanowire microelectrode, preparation method and application thereof |
| CN105675682B (en) * | 2015-12-28 | 2019-03-26 | 中国人民大学 | A kind of nano wire microelectrode and the preparation method and application thereof that size is controllable |
| CN112675423A (en) * | 2020-12-23 | 2021-04-20 | 北京印刷学院 | Electric stimulation microelectrode and preparation method thereof |
| CN112675423B (en) * | 2020-12-23 | 2023-08-11 | 北京印刷学院 | Electrical stimulation microelectrode and preparation method thereof |
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