CN107403846A - Method for implementing electroplating process on transparent conductive film of solar cell - Google Patents
Method for implementing electroplating process on transparent conductive film of solar cell Download PDFInfo
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- CN107403846A CN107403846A CN201710095674.8A CN201710095674A CN107403846A CN 107403846 A CN107403846 A CN 107403846A CN 201710095674 A CN201710095674 A CN 201710095674A CN 107403846 A CN107403846 A CN 107403846A
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- barrier layer
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000009713 electroplating Methods 0.000 title claims abstract description 27
- 230000008569 process Effects 0.000 title claims abstract description 27
- 239000010410 layer Substances 0.000 claims abstract description 198
- 230000004888 barrier function Effects 0.000 claims abstract description 104
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052802 copper Inorganic materials 0.000 claims abstract description 62
- 239000010949 copper Substances 0.000 claims abstract description 62
- 239000011241 protective layer Substances 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims description 53
- 239000011248 coating agent Substances 0.000 claims description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 238000007747 plating Methods 0.000 claims description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the field of solar cells, and discloses a method for implementing an electroplating process on a transparent conductive film of a solar cell, which comprises the following steps: forming a barrier layer on the transparent conductive film; forming a first mask on the barrier layer, wherein the first mask partially covers the barrier layer; etching the barrier layer to remove the portion not covered by the first mask and leave the portion covered by the first mask; removing the first mask to expose the remaining barrier layer; forming a second mask over the transparent conductive film, wherein the second mask has an opening exposing at least a portion of the remaining barrier layer; electroplating the barrier layer in the opening to form a copper layer; electroplating on the copper layer to form a protective layer; and removing the second shield after the protective layer is formed. The method of the invention can accurately control and define the metal electrode structure pattern, and the finally formed metal electrode structure can not be eroded by the etchant.
Description
Technical field
The present invention relates to area of solar cell, in particular it relates to which a kind of method for implementing electroplating process, more particularly has
On a kind of in the method for implementing electroplating process on nesa coating, can be used for forming the electrode of solar cell.This technology
Feature is that the mode for making collocation electroplating process is shielded using two benches, accurately controls and define metal electrode structure figure
Shape, which can effectively avoid producing so-called " undercutting " (undercut) now because of the lateral etches of etchant in manufacturing process
As causing barrier layer can not accurately etch desired pattern, therefore, the metal electrode structure ultimately formed also will not be by
The erosion of etchant.
Background technology
In the case where fossil energy shortage and demand for energy are growing day by day, the renewable sources of energy (Renewable
Energy) be developed into one of very important problem in recent years.The renewable sources of energy refer to forever continuous and free of contamination natural energy source,
Such as solar energy, wind energy, water conservancy energy, tide energy or raw mass-energy etc., the wherein exploitation of solar energy is even more in recent years in the energy
A quite important and welcome ring in the research of exploitation, and solar cell is then one kind can convert the solar into electric energy
Device.
Known silicon wafer solar cell consists predominantly of：For converting light energy into the substrate of electric energy, and for passing
The front electrode and backplate of electrical conduction current.Foregoing front electrode can pass through plating or screen painting with backplate in manufacture
Mode formed.
Reference picture 1, which show a kind of structure of conventional solar cell.Conventional solar cell includes monocrystalline
Or polycrystalline silicon substrate 110, the doping type of the silicon substrate 110 can be N-type.Silicon substrate 110 is with smooth surface 111 and relatively
In the back side 112 of the smooth surface 111.Respectively formed with essential amorphous silicon hydride (i a-Si on smooth surface 111 and the back side 112:H)
Layer 121 and 122.Formed with the P+ hydrogenated amorphous silicon layers from 110 different doping types of silicon substrate on essential hydrogenated amorphous silicon layer 121
130 are used as emitter-base bandgap grading, to form p-n junction (p-n junction).On essential hydrogenated amorphous silicon layer 122 formed with silicon substrate
The N+ hydrogenated amorphous silicon layers 140 of 110 identical doping types are as back surface field (Back SurfaceField；BSF).In P+ hydrogen
Change on amorphous silicon layer 130 and N+ hydrogenated amorphous silicon layers 140 respectively formed with nesa coating 151 and 152, e.g. with tin indium oxide
(Indium Tin Oxide；ITO nesa coating made of).Formed with front electrode 170 on nesa coating 151, and
Then formed with backplate 180 on nesa coating 152.
Reference picture 2, it shows the thin portion structure of the front electrode 170 of above-mentioned Fig. 1 solar cell.If front electrode
170 are formed with plating mode, and it can include barrier layer (barrier layer) 171, layers of copper 172 and protective layer 173.
Barrier layer 171 is deposited on nesa coating 151, for preventing the copper of layers of copper 172 from diffusing to silicon substrate 110.Layers of copper 172 is
Plating is on barrier layer 171, and protective layer 173 is then formed in layers of copper 172, to prevent layers of copper 172 from aoxidizing.
The method for making above-mentioned front electrode 170, it is first in a manner of sputter or physical vapour deposition (PVD) etc. in nesa coating
One layer of continuous nickel dam or titanium layer are deposited on 151, is used for forming barrier layer 171 for follow-up.Afterwards, in above-mentioned nickel dam or titanium layer
The shielding of upper deposit patterned, the shielding have the opening of patterning, correspond to position of the layers of copper 172 on barrier layer 171.Again
By shield be immersed in acidity copper-contained electroplating liquid, with shield it is intraoral on nickel dam or titanium layer plating form layers of copper 172.In copper
After layer 172 is formed, the mode by the use of plating forms tin layers or silver layer in layers of copper 172 and is used as protective layer 173.Followed by alkali
Property solution remove shielding, allow nickel dam or titanium layer to expose.Etchant is then utilized, e.g. acidic etching liquid or oxidant is to nickel
Layer or titanium layer are etched, to remove the other parts of continuous nickel dam or titanium layer outside the underface of layers of copper 172, that is, nickel dam
Or titanium layer it is exposed below layers of copper 172 outside part be removed, the part for being only located at the lower section of layers of copper 172 is retained, then
Form the barrier layer 171 of front electrode 170.
However, above-mentioned can also touch to form barrier layer 171 to etchant used in nickel dam or titanium layer etching
Early established layers of copper 172 and protective layer 173 and cause to corrode, and nickel dam or titanium layer be located at the part of the underface of layers of copper 172
So-called " undercutting " (undercut) phenomenon can be produced because of the lateral etches of etchant, cause barrier layer 171 accurate
Ground forms desired pattern.
In view of this, it is just in need to propose a kind of scheme, to solve the above problems.
The content of the invention
The present invention provides a kind of in the method for implementing electroplating process on solar cell nesa coating.
In a first aspect, the invention provides it is a kind of on solar cell nesa coating implement electroplating process method,
Including：In forming barrier layer on nesa coating；Shielded in forming first on the barrier layer, wherein the first shielding local complexity
The barrier layer；The barrier layer is etched, to remove not by the part of the first shielding covering, and by first screen under residual
Cover the part of covering；First shielding is removed, to expose the barrier layer of the residual；In forming the second screen on the nesa coating
Cover, wherein the secondary shielding has opening, exposes at least a portion of the barrier layer of the residual；Barrier layer in the opening
Upper plating forms layers of copper；Protective layer is formed in plating in the layers of copper；And remove the secondary shielding after the protective layer is formed.
The method in implementation electroplating process on solar cell nesa coating described according to a first aspect of the present invention,
After layers of copper is electroplated and formed, any etch process is not undergone again, therefore layers of copper will not be by etchant with protective layer
Erosion.In addition, etch process is implemented before layers of copper and protective layer are formed, therefore the selection of etchant need not be taken into consideration and be
It is no to corrode layers of copper and protective layer, in this way, the species for having higher rate of etch to barrier layer may be selected in the etchant used, with
Accelerate etching speed.
Second aspect, the invention provides it is a kind of on solar cell nesa coating implement electroplating process method,
Including：In forming barrier layer on nesa coating；In forming the first shielding on the barrier layer, wherein first shielding, which has, opens
Mouth, expose at least a portion of the barrier layer；Plating forms layers of copper on barrier layer in the opening；Electroplated in the layers of copper
Form protective layer；First shielding is removed after the protective layer is formed；Secondary shielding is formed to cover the protective layer and the layers of copper；
The barrier layer is etched, to remove the part not covered by the secondary shielding；And second screen is removed after the etching
Cover.
The method in implementation electroplating process on solar cell nesa coating described according to a second aspect of the present invention,
Layers of copper and protective layer are covered by secondary shielding, therefore will not be corroded by etchant.In addition, because layers of copper and protective layer will not
Etchant is touched, therefore the selection of etchant need not be taken into consideration whether layers of copper and protective layer can be corroded, in this way, the erosion used
The species that agent may be selected to have barrier layer higher rate of etch is carved, to accelerate etching speed.
In order to which above and other objects of the present invention, feature and advantage can be become apparent from, it will hereafter coordinate appended diagram, in detail
Carefully it is described as follows.In addition, in the explanation of the present invention, identical component system is represented with identical symbol, is first stated clearly in this.
Brief description of the drawings
Accompanying drawing is for providing a further understanding of the present invention, and a part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is a kind of schematic diagram of conventional solar battery structure.
Fig. 2 is the partial enlarged drawing of Fig. 1 part A.
Fig. 3 a to Fig. 3 g-3 depict being electroplated in implementation on solar cell nesa coating for the first aspect of the present invention
The method of processing procedure.
Fig. 4 a to Fig. 4 g depict being made in implementation plating on solar cell nesa coating for the second aspect of the present invention
The method of journey.
Description of reference numerals
The smooth surface of 110 silicon substrate 111
112 back side, 121 essential hydrogenated amorphous silicon layer
The 122 essential P+ hydrogenated amorphous silicon layers of hydrogenated amorphous silicon layer 130
The nesa coating of 140 N+ hydrogenated amorphous silicon layers 151
The front electrode of 152 nesa coating 170
The layers of copper of 171 barrier layer 172
The backplate of 173 protective layer 180
The barrier layer of 210 nesa coating 220
The side of 221 top surface 223
The top surface of 230 layers of copper 231
The protective layer of 233 side 240
291 first 292 secondary shieldings of shielding
295 310 nesa coatings of opening
The layers of copper of 320 barrier layer 330
The side of 331 top surface 333
340 protective layers 391 first shield
392 secondary shieldings 395 are open
Embodiment
The embodiment of the present invention is described in detail below.It is it should be appreciated that described herein specific
Embodiment is merely to illustrate and explain the present invention, and is not intended to limit the invention.
The end points of disclosed scope and any value are not limited to the accurate scope or value herein, these scopes or
Value should be understood to comprising the value close to these scopes or value.For number range, between the endpoint value of each scope, respectively
It can be combined with each other between the endpoint value of individual scope and single point value, and individually between point value and obtain one or more
New number range, these number ranges should be considered as specific open herein.
In a first aspect, the invention provides it is a kind of on solar cell nesa coating implement electroplating process method,
Including：
In forming barrier layer on nesa coating；
In forming the first shielding on the barrier layer, wherein the first shielding local complexity barrier layer；
The barrier layer is etched, to remove not by the part of the first shielding covering, and by first screen under residual
Cover the part of covering；
First shielding is removed, to expose the barrier layer of the residual；
In forming secondary shielding on the nesa coating, wherein the secondary shielding has opening, exposes the resistance of the residual
At least a portion of barrier layer；
Plating forms layers of copper on barrier layer in the opening；
Protective layer is formed in plating in the layers of copper；And
The secondary shielding is removed after the protective layer is formed.
Preferably, the barrier layer of residual has top surface, and the secondary shielding covers at least marginal portion of the top surface.
According to a kind of preferred embodiment, the barrier layer of residual has top surface and the plural number being connected with the top surface
Individual side, at least a portion of a plurality of sides are not covered in by the secondary shielding.
According to another preferred embodiment, the barrier layer of residual has top surface and is connected with the top surface
A plurality of sides, a plurality of sides are covered in by the secondary shielding completely.
Preferably, the nesa coating is made of with tin indium oxide.
Preferably, the barrier layer includes nickel or titanium.
Preferably, the protective layer includes tin or silver.
The electric in implementing on solar cell nesa coating of the first aspect of the present invention is described in detail below in conjunction with accompanying drawing
The method for plating processing procedure.
Reference picture 3a to Fig. 3 g-3, it is shown in first aspect present invention implements on solar cell nesa coating
The method of electroplating process.First, there is provided nesa coating 210, and in one layer of continuous barrier of deposition on the nesa coating 210
Layer 220.In a preferred embodiment, nesa coating 210 can be with tin indium oxide (Indium Tin Oxide；
ITO nesa coating made of), and continuous barrier layer 220 can be the metal levels such as nickel dam or titanium layer, can be with sputter or thing
Physical vapor deposition (Physical Vapor Deposition；) etc. PVD mode forms and (refers to Fig. 3 a).
Referring to Fig. 3 b, the then shielding of deposition first 291 on barrier layer 220, first shielding 291 is local complexity barrier
Layer 220, that is, at least a portion of the covering barrier layer 220 of the first shielding 291, and expose the other parts of barrier layer 220.Need
It is noted that the first shielding 291 is exemplified by one in the first aspect of the present invention, but it is not limited with one.
Referring to Fig. 3 c, the barrier layer 220 covered with the first shielding 291 is etched afterwards, makes barrier layer 220 not by the
The part of the covering of one shielding 291 is etched, and is only remained down by the part of the covering of the first shielding 291, that is, barrier layer 220 exists
Part immediately below the first shielding 291 is retained, and the part outside immediately below the first shielding 291 is etched
Fall.In a preferred embodiment, the etchant such as acidic etching liquid or oxidant can be used to covered with the first shielding 291
Barrier layer 220 carry out wet etching (wet etching).It should be noted that the material for forming the first shielding 291 is will be to this
Etchant has higher etching selectivity (etch selectivity), to prevent the first shielding 291 to be etched excessively, because
And barrier layer 220 accurately can not be etched into desired pattern.
Referring to Fig. 3 d, the first shielding 291 is removed using alkaline solution afterwards, to expose the barrier layer 220 of residual.
Referring to Fig. 3 e-1,3e-2,3e-3, secondary shielding 292 is deposited on nesa coating 210 afterwards.And secondary shielding
292 set-up mode, can at least there are following three kinds of forms：The first form is, as shown in Fig. 3 e-1, secondary shielding 292 has
There are opening 295, and the institute that the opening 295 exposes the whole top surface 221 of residual barrier layer 220 and is connected with the top surface 221
There are a plurality of sides 223.Second of form is, as shown in Fig. 3 e-2, the opening 295 of secondary shielding 292 exposes residual barrier
The whole top surface 221 of layer 220, but secondary shielding 292 has covered all sides 223 of residual barrier layer 220, that is, residual resistance
The whole top surface 221 of barrier layer 220 exposes, but all sides 223 are covered in by secondary shielding 292.The third form is such as to scheme
Shown in 3e-3, the opening 295 of secondary shielding 292 exposes the portion top surface 221 of residual barrier layer 220, and secondary shielding 292 hides
All sides 223 of residual barrier layer 220 have been covered, that is, the middle body of the residual top surface 221 of barrier layer 220 exposes, but
The marginal portion of top surface 221 and all sides 223 are all covered in by secondary shielding 292.In addition to above-mentioned three kinds of forms, second
Shielding 292 also only can locally cover in the side 223 of residual barrier layer 220, and opening 295 exposes residual barrier layer 220
Part or whole top surface 221.
Referring to Fig. 3 f-1,3f-2,3f-3, electroplating process is then carried out, barrier layer 220 will be remained and be immersed in acid cupric electricity
In plating solution, to form layers of copper 230 on residual barrier layer 220 in the opening 295 of secondary shielding 292, after the layers of copper 230 is formed
There can be the top surface 231 of protrusion.And then tin layers or silver layer are formed on the top surface 231 of layers of copper 230 using the mode of plating
As protective layer (cappinglayer) 240, to prevent layers of copper 230 from aoxidizing.
Finally, secondary shielding 292 is removed using alkaline solution, forms the structure as shown in Fig. 3 g-1,3g-2 or 3g-3,
Wherein, the content shown in Fig. 3 g-1,3g-2 and 3g-3 is the most end form by the step shown in Fig. 3 e-1,3e-2 and 3e-3 respectively
Into structure.
It is described on solar cell nesa coating according to a first aspect of the present invention compared with foregoing conventional method
Implement the method for electroplating process, after the plating of layers of copper 230 is formed, do not undergo any metal etch process, therefore copper again
Layer 230 will not be corroded with protective layer 240 by etchant.In addition, because etch process is in layers of copper 230 and protective layer 240
Implement before being formed, therefore the selection of etchant need not be taken into consideration layers of copper 230 and protective layer 240 whether can be corroded, in this way, making
Etchant can select the species for having higher rate of etch to barrier layer 220, to accelerate etching speed.
Especially, formed by the step shown in Fig. 3 e-1,3f-1 in the structure as shown in Fig. 3 g-1, protective layer 240
In addition to forming the top surface 231 in layers of copper 230, the side 233 of layers of copper 230 is also covered in, therefore can further prevent copper
Layer 230 aoxidizes.
Second aspect, the invention provides it is a kind of on solar cell nesa coating implement electroplating process method,
Including：
In forming barrier layer on nesa coating；
Shielded in forming first on the barrier layer, wherein, first shielding has opening, exposes the barrier layer at least
A part；
Plating forms layers of copper on barrier layer in the opening；
Protective layer is formed in plating in the layers of copper；
First shielding is removed after the protective layer is formed；
Secondary shielding is formed to cover the protective layer and the layers of copper；
The barrier layer is etched, to remove the part not covered by the secondary shielding；And
The secondary shielding is removed after the etching.
Preferably, in the second aspect, the nesa coating is made of with tin indium oxide.
Preferably, in the second aspect, the barrier layer includes nickel or titanium.
Preferably, in the second aspect, the protective layer includes tin or silver.
The electric in implementing on solar cell nesa coating of the second aspect of the present invention is described in detail below in conjunction with accompanying drawing
The method for plating processing procedure.
Reference picture 4a to Fig. 4 g, which show described in second aspect of the present invention in real on solar cell nesa coating
The method for applying electroplating process.First, there is provided nesa coating 310, and continuously hindered in depositing one layer on the nesa coating 310
Barrier layer 320.In a preferred embodiment, nesa coating 310 can be with nesa coating made of tin indium oxide,
And continuous barrier layer 320 can be the metal levels such as nickel dam or titanium layer, can be formed in a manner of sputter or physical vapour deposition (PVD) etc.
(referring to Fig. 4 a).
Fig. 4 b are referred to, the shielding of deposition first 391 on barrier layer 320 afterwards, first shielding 391 has opening 395,
Expose at least a portion of barrier layer 320.It should be noted that opening 395 is in being with one in the second aspect of the present invention
Exemplified by individual, but it is not limited with one.
Referring to Fig. 4 c, electroplating process is then carried out, barrier layer 320 is immersed in the copper-contained electroplating liquid of acidity, with first
Layers of copper 330 is formed in the opening 395 of shielding 391 on barrier layer 320, the layers of copper 330 there can be the top surface of protrusion after being formed
331.And then tin layers or silver layer are formed on the top surface 331 of layers of copper 330 as protective layer 340 by the use of the mode of plating, to prevent
Only layers of copper 330 aoxidizes.
Referring to Fig. 4 d, the first shielding 391 is removed using alkaline solution afterwards.
Referring to Fig. 4 e, secondary shielding 392 is deposited on protective layer 340 afterwards, so that protective layer 340 and layers of copper is completely covered
330 side 333, and cover to the part barrier layer 320 on the side of layers of copper 330.
Referring to Fig. 4 f, the barrier layer 320 covered with secondary shielding 392 is etched afterwards, make barrier layer 320 not by
The part that secondary shielding 392 covers is etched, and under remaining the part that is covered by secondary shielding 392 and protective layer 340 with
Layers of copper 330.In a preferred embodiment, the etchant such as acidic etching liquid or oxidant can be used to covered with the second screen
The barrier layer 320 for covering 392 carries out wet etching.It should be noted that the material for forming secondary shielding 392 is that to have to the etchant
There is higher etching selectivity, to prevent secondary shielding 392 to be etched excessively, thus accurately can not etch barrier layer 320
Go out desired pattern.
Finally, secondary shielding 392 is removed using alkaline solution, forms structure as shown in figure 4g.
Compared with foregoing conventional method, according to a second aspect of the present invention described in solar cell nesa coating
The upper method for implementing electroplating process, layers of copper 330 and protective layer 340 are covered by secondary shielding 392, therefore will not be by etchant
Erosion.In addition, because layers of copper 330 and protective layer 340 will not touch etchant, therefore the selection of etchant need not be taken into consideration and be
It is no to corrode layers of copper 230 and protective layer 240, in this way, the etchant used may be selected have higher rate of etch to barrier layer 320
Species, to accelerate etching speed.
According to of the present invention in the method for implementing electroplating process on solar cell nesa coating, can be used to form
The electrode of solar cell, such as the front electrode 170 of solar cell shown in Fig. 1 is formed, but not limited to this.
Although the present invention illustrates the present invention before by the preferred embodiment of first aspect and second aspect
In on solar cell nesa coating implement electroplating process method, however, this is not intended to limit the invention.It is any
Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the invention, when can make it is various more
Dynamic and modification.Therefore protection scope of the present invention should be defined by what the scope described in claim defined.
Claims (11)
1. it is a kind of in the method for implementing electroplating process on solar cell nesa coating, including：
In forming a barrier layer on a nesa coating；
In forming one first shielding on the barrier layer, wherein the first shielding local complexity barrier layer；
The barrier layer is etched, to remove not by the part of the first shielding covering, and covered under remaining by first shielding
The part of lid；
First shielding is removed, to expose the barrier layer of the residual；
In forming a secondary shielding on the nesa coating, wherein the secondary shielding has an opening, exposes the resistance of the residual
At least a portion of barrier layer；
Plating forms a layers of copper on barrier layer in the opening；
A protective layer is formed in plating in the layers of copper；And
The secondary shielding is removed after the protective layer is formed.
2. according to the method for claim 1, wherein, the barrier layer of the residual has a top surface, and the secondary shielding covers in
An at least marginal portion for the top surface.
3. according to the method for claim 1, wherein, the barrier layer of the residual has a top surface and is connected with the top surface
A plurality of sides, at least a portion of a plurality of sides are not covered in by the secondary shielding.
4. according to the method for claim 1, wherein, the barrier layer of the residual has a top surface and is connected with the top surface
A plurality of sides, a plurality of sides are covered in by the secondary shielding completely.
5. according to the method for claim 1, wherein, the nesa coating is made of with tin indium oxide.
6. according to the method for claim 1, wherein, the barrier layer includes nickel or titanium.
7. according to the method for claim 1, wherein, the protective layer includes tin or silver.
8. it is a kind of in the method for implementing electroplating process on solar cell nesa coating, including：
In forming barrier layer on a nesa coating；
Shielded in forming one first on the barrier layer, wherein, first shielding has opening, exposes at least the one of the barrier layer
Part；
Plating forms a layers of copper on barrier layer in the opening；
A protective layer is formed in plating in the layers of copper；
First shielding is removed after the protective layer is formed；
A secondary shielding is formed to cover the protective layer and the layers of copper；
The barrier layer is etched, to remove the part not covered by the secondary shielding；And
The secondary shielding is removed after the etching.
9. according to the method for claim 8, wherein, the nesa coating is made of with tin indium oxide.
10. according to the method for claim 8, wherein, the barrier layer includes nickel or titanium.
11. according to the method for claim 8, wherein, the protective layer includes tin or silver.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105115394A TWI587540B (en) | 2016-05-18 | 2016-05-18 | Method of performing plating process on transparent conductive film for solar cells |
| TW105115394 | 2016-05-18 |
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| Publication Number | Publication Date |
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| CN107403846A true CN107403846A (en) | 2017-11-28 |
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| CN201710095674.8A Pending CN107403846A (en) | 2016-05-18 | 2017-02-22 | Method for implementing electroplating process on transparent conductive film of solar cell |
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| Country | Link |
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| JP (1) | JP2017208524A (en) |
| CN (1) | CN107403846A (en) |
| TW (1) | TWI587540B (en) |
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| CN108400175A (en) * | 2018-01-24 | 2018-08-14 | 苏州太阳井新能源有限公司 | A kind of heterojunction solar battery and preparation method with electroplated electrode |
| CN108649077A (en) * | 2018-06-21 | 2018-10-12 | 苏州太阳井新能源有限公司 | A kind of two-sided galvanic metallization solar battery sheet of no main grid, production method and methods for using them |
| CN109402571A (en) * | 2018-11-01 | 2019-03-01 | 厦门建霖健康家居股份有限公司 | A method of production local transparent electroplated product is combined by semidry method and shielding |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115132856B (en) * | 2021-03-24 | 2024-02-13 | 浙江爱旭太阳能科技有限公司 | Manufacturing method of battery electrode and solar battery |
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Also Published As
| Publication number | Publication date |
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| TWI587540B (en) | 2017-06-11 |
| JP2017208524A (en) | 2017-11-24 |
| TW201742261A (en) | 2017-12-01 |
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