CN107402068B - It is a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer - Google Patents
It is a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer Download PDFInfo
- Publication number
- CN107402068B CN107402068B CN201710533167.8A CN201710533167A CN107402068B CN 107402068 B CN107402068 B CN 107402068B CN 201710533167 A CN201710533167 A CN 201710533167A CN 107402068 B CN107402068 B CN 107402068B
- Authority
- CN
- China
- Prior art keywords
- layer
- zinc oxide
- nanometer line
- metal nanometer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 63
- 239000002184 metal Substances 0.000 title claims abstract description 63
- 239000000463 material Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002086 nanomaterial Substances 0.000 claims abstract description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000002070 nanowire Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001548 drop coating Methods 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 9
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000001027 hydrothermal synthesis Methods 0.000 abstract 1
- 238000003980 solgel method Methods 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 12
- BEAZKUGSCHFXIQ-UHFFFAOYSA-L zinc;diacetate;dihydrate Chemical compound O.O.[Zn+2].CC([O-])=O.CC([O-])=O BEAZKUGSCHFXIQ-UHFFFAOYSA-L 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 8
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 8
- 239000004246 zinc acetate Substances 0.000 description 8
- 235000013904 zinc acetate Nutrition 0.000 description 8
- PQYUGUXEJHLOIL-UHFFFAOYSA-N diethoxysilyl triethyl silicate Chemical compound C(C)O[SiH](O[Si](OCC)(OCC)OCC)OCC PQYUGUXEJHLOIL-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 4
- 239000004312 hexamethylene tetramine Substances 0.000 description 4
- 229960004011 methenamine Drugs 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000003643 water by type Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 230000010148 water-pollination Effects 0.000 description 2
- 241001614291 Anoplistes Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer, includes plane and two kinds of structures of " sandwich " type.Plane ultraviolet light transducer includes substrate, metal nanometer line layer, nano zinc oxide material layer；" sandwich " structure includes top electrode layer.It by spray deposited one layer of metal nanometer line conductive film is substrate first on flexible, transparent substrate when preparation, then the crystal seed of one layer of zinc oxide is grown on metal nanometer line/substrate that mask plate covers with sol-gel method, using hydrothermal reaction at low temperature, as active layer, extraction electrode lead device is made in growth of zinc oxide nano material layer on metal nanometer line again.The features such as light transmittance of Ultraviolet sensor proposed by the present invention is greater than 50%, has good sensitivity in the case where 0.5V operates voltage, and has simple process and low cost, be easy to large scale preparation.
Description
Technical field
The invention belongs to nano material preparation and application sensory fields, are related to a kind of based on metal nanometer line/zinc oxide nano
The preparation method of flexible, the transparent ultraviolet light transducer of rice structure.
Background technique
Ultraviolet light transducer has the characteristics that high sensitivity, high response speed, service life length, little power consumption, in security protection, certainly
Dynamicization control, environmental monitoring and biomedicine etc. are widely used.As a kind of semiconductor material with wide forbidden band, zinc oxide
Material, especially nano zinc oxide material have preferable photoelectric respone to ultraviolet light, are a kind of ideal ultraviolet light transducers
Material.Traditionally generally it is grown in the rigid substrates such as silicon wafer, ITO applied to the zinc oxide active material of ultraviolet light transducer
Particle, nano wire, nano-rod film, there is the problems such as with the poor adhesive force of substrate, the poor continuity of film, uneven distribution.This
Outside, rigid substrate device is also difficult to meet the following wearable electronic to the need of the flexibilities and the transparency such as resistant to bending, stretching
It asks.
Summary of the invention
The purpose of the present invention is to provide a kind of flexible, transparent ultraviolet light transducers, for having resistant to bending, tension
Stretch the wearable electronic with transparent demand.
Technical solution provided by the invention is a kind of based on the ultraviolet light sensing of metal nanometer line/nano zinc oxide material
Device, including flexibility, transparent substrate, the metal nanometer line layer being deposited on substrate, the oxidation prepared on metal nanometer line layer
Point electrode is arranged on metal nanometer line layer in zinc nano material layer.
Further, top electrode layer is prepared on nano zinc oxide material layer, point electrode is located on top electrode layer.
Further, above-mentioned top electrode layer be the metal nanometer line deposited on nano zinc oxide material layer by mask plate or
Metal film layer.
Preferably, above-mentioned substrate can be PET, PDMS, PI.
The present invention furthermore provide it is a kind of prepare it is above-mentioned based on metal nanometer line/nano zinc oxide material ultraviolet light pass
The method of sensor, comprising the following steps:
S1: one layer of metal nanometer line layer is deposited with spraying technology on flexible substrates, the thickness of metal nanometer line layer is in 5-
50 μm, sheet resistance is less than 25 Ω .sq–1；
S2: fixing mask plate on the metal nanometer line substrate prepared, in drop coating seed-solution above, deposits one layer
Zinc oxide films film layer is obtained inserting the film for referring to electrode shape, be subsequently placed in the beaker of hot bath, using containing as seed layer
Substrate is inserted vertically into reaction solution and is fixed by the alkaline reaction solution of zinc ion；
S3: reacting 1-8h in 70-95 DEG C of water-bath, cleans up substrate with deionized water after reaction, is placed in baking oven
Middle drying, obtains zinc oxide array；
S4: depositing point electrode on metal nanometer line layer 2, obtains to the ultraviolet zinc-oxide nano sensing for having fine susceptibility
Device.
Process comprising a preparation top electrode layer after step 3, particular content are as follows: by above-mentioned zinc oxide nanowire/
Metal nanometer line/PET sample mask film covering plate, patterning spraying silver nanowire layer or evaporated metal layer, are put into drying box and do
After dry, above one layer be top electrode layer, obtain " sandwich " type ultraviolet light transducer.
Seed-solution is the ethanol solution of Zinc diacetate dihydrate, methanol, polyvinyl alcohol, concentration 0.008M.
The Zinc diacetate dihydrate (zinc nitrate hexahydrate) and six Asias that alkaline solution containing zinc ion is 0.03-0.05M
Tetramine aqueous solution.
Compared with prior art, beneficial effects of the present invention:
1, the light transmittance of Ultraviolet sensor of the invention is greater than 50%, has in the case where 0.5V operates voltage good sensitive
Degree.
2, original sensing capabilities can also be kept not decay after mechanical deflection 100 times.
3, the features such as there is simple process and low cost, be easy to large scale preparation.
Detailed description of the invention
Fig. 1 is the schematic diagram of plane Ultraviolet sensor.
Fig. 2 is the schematic diagram of " sandwich " structure ultraviolet light transducer.
Wherein: 1 is substrate, and 2 be metal nanometer line layer, and 3 be nano structure of zinc oxide layer, and 5 be top electrode, and 4,6 be point electricity
Pole.
Specific embodiment
The present invention is further detailed with reference to the accompanying drawings and examples
Embodiment 1
Referring to attached drawing 1, the preparation process of plane ultraviolet light transducer is as follows:
(1) substrate processing: by plasma treated its surface impurity of removing of PET substrate, increase hydrophily.
(2) deposition of metal nanometer line layer: the alcohol dispersion liquid of metal nanometer line is sprayed at PET substrate and deposits to form gold
Belong to nano wire film；The dry close annealing of steaming sky by film at 100 DEG C, it is desirable that sheet resistance is less than 25 .sq -1 Ω, light transmittance
Greater than 80%.
(3) preparation of zinc oxide nanowire layer:
1) weighing Zinc diacetate dihydrate, methanol, polyvinyl alcohol, by the molar ratio of 1:1:1 to be dissolved in ethyl alcohol (ethanol) molten
The zinc acetate solution that concentration is 0.008M is configured in liquid.
2) it takes a certain amount of above-mentioned zinc acetate solution drop coating on metal nanometer line/PET substrate that mask plate covers, is put into
30min is dried in 100 DEG C of baking ovens, obtains metal nanometer line/PET sample that surface has zinc oxide crystal seed.
3) Zinc diacetate dihydrate, hexamethylene tetramine equimolar are dissolved in deionized water, are made into 0.01-0.05M
Zinc diacetate dihydrate solution；Metal nanometer line/PET substrate by surface with zinc oxide crystal seed is placed in zinc nitrate solution
In, 1-3h is reacted at 75-90 DEG C；Sample is taken out, mask plate is removed, is rinsed with a large amount of deionized waters, until substrate surface does not have
To get zinc oxide nanowire/metal nanometer line/PET sample until zinc oxide attachment.
(4) plane ultraviolet light transducer is constructed: by above-mentioned patterned zinc oxide nanowire/metal nanometer line/PET
The metal nanometer line part extraction electrode conducting wire of sample is to get plane ultraviolet light transducer；
In above-described embodiment, substrate can also use PEDS, PI.
Zinc oxide film can also use zinc-oxide nano column.Zinc oxide film nano-pillar preparation process are as follows:
1) weighing Zinc diacetate dihydrate, methanol, polyvinyl alcohol, by the molar ratio of 1:1:1 to be dissolved in ethyl alcohol (ethanol) molten
The zinc acetate solution that concentration is 0.008M is configured in liquid.
2) it takes a certain amount of above-mentioned zinc acetate solution drop coating on metal nanometer line/PET substrate that mask plate covers, is put into
30min is dried in 100 DEG C of baking ovens, obtains metal nanometer line/PET sample that surface has zinc oxide crystal seed.
3) zinc nitrate hexahydrate, hexamethylene tetramine equimolar are dissolved in deionized water, are made into 0.03-0.08M
Zinc nitrate solution；Metal nanometer line/PET substrate by surface with zinc oxide crystal seed is placed in zinc nitrate solution, 80-95
3-5h is reacted at DEG C；Sample is taken out, mask plate is removed；It is rinsed with a large amount of deionized waters, until substrate surface does not have zinc oxide attached
Until object to get zinc oxide nanowire/metal nanometer line/PET sample.
Zinc oxide film can also use zinc oxide nano mitron.The preparation process of zinc oxide film nanotube are as follows:
1) weighing Zinc diacetate dihydrate, methanol, polyvinyl alcohol, by the molar ratio of 1:1:1 to be dissolved in ethyl alcohol (ethanol) molten
The zinc acetate solution that concentration is 0.08M is configured in liquid.
2) it takes a certain amount of above-mentioned zinc acetate solution drop coating on metal nanometer line/PET substrate that mask plate covers, is put into
30min is dried in 100 DEG C of baking ovens, obtains metal nanometer line/PET sample that surface has zinc oxide crystal seed.
3) zinc nitrate hexahydrate, hexamethylene tetramine equimolar are dissolved in deionized water, are made into 0.05-0.1M's
Zinc nitrate solution；Metal nanometer line/PET substrate by surface with zinc oxide crystal seed is placed in zinc nitrate solution, and 80-95 DEG C
Lower reaction 5-8h；And purity oxygen (50sccm) is constantly blasted during the reaction.Sample is taken out, mask plate is removed；With a large amount of
Deionized water is rinsed, to get zinc oxide nanowire/metal nanometer line/PET until substrate surface does not have zinc oxide attachment
Sample.
When it is implemented, the combination of substrate and zinc oxide film can also have variation below: for example, substrate uses PEDS,
Zinc oxide film uses zinc-oxide nano column；Substrate uses PEDS, and zinc oxide film uses zinc oxide nano mitron；Substrate uses PI, oxygen
Change zinc layers and uses zinc-oxide nano column；Substrate uses PI, and zinc oxide film uses zinc oxide nano mitron.
Referring to attached drawing 2, the preparation process of " sandwich " type ultraviolet light transducer is as follows:
(1) substrate processing: by plasma treated its surface impurity of removing of PET substrate, increase hydrophily.
(2) metal nanometer line layer deposits: the alcohol dispersion liquid of metal nanometer line being sprayed at PET substrate and deposits to form metal
Nano wire film；The dry close annealing of steaming sky by film at 100 DEG C, it is desirable that for sheet resistance less than 25 .sq -1 Ω, light transmittance is big
In 80%.
(3) prepared by zinc oxide nanowire layer:
1) weighing Zinc diacetate dihydrate, methanol, polyvinyl alcohol, by the molar ratio of 1:1:1 to be dissolved in ethyl alcohol (ethanol) molten
The zinc acetate solution that concentration is 0.008M is configured in liquid.
2) it takes a certain amount of above-mentioned zinc acetate solution drop coating on metal nanometer line/PET substrate that mask plate covers, is put into
30min is dried in 100 DEG C of baking ovens, obtains metal nanometer line/PET sample that surface has zinc oxide crystal seed.
3) Zinc diacetate dihydrate, hexamethylene tetramine equimolar are dissolved in deionized water, are made into 0.01-0.05M
Zinc diacetate dihydrate solution；Metal nanometer line/PET substrate by surface with zinc oxide crystal seed is placed in zinc nitrate solution
In, 1-3h is reacted at 75-90 DEG C；Sample is taken out, mask plate is removed, is rinsed with a large amount of deionized waters, until substrate surface does not have
To get zinc oxide nanowire/metal nanometer line/PET sample until zinc oxide attachment.
(4) " sandwich " type ultraviolet light transducer is constructed: by above-mentioned zinc oxide nanowire/metal nanometer line/PET sample
Mask film covering plate, patterning spraying silver nanowire layer or evaporated metal layer, obtain " sandwich " type ultraviolet light transducer.
In above-mentioned preparation process, PEDS, PI is can be used in substrate.Zinc-oxide nano column, oxidation can be used in zinc oxide film
Zinc nanotube.
When it is implemented, the combination of substrate and zinc oxide film can also have variation below: for example, substrate uses PEDS,
Zinc oxide film uses zinc-oxide nano column；Substrate uses PEDS, and zinc oxide film uses zinc oxide nano mitron；Substrate uses PI, oxygen
Change zinc layers and uses zinc-oxide nano column；Substrate uses PI, and zinc oxide film uses zinc oxide nano mitron.
Claims (5)
1. a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer, which is characterized in that including flexible, saturating
Bright substrate 1, the flexibility being deposited on substrate, transparent metal nano wire layer 2, the zinc oxide prepared on metal nanometer line layer 2
Point electrode 4 is arranged on metal nanometer line layer 2 for layer of nanomaterial 3.
2. as described in claim 1 based on metal nanometer line/nano zinc oxide material ultraviolet light transducer, feature exists
In flexible, transparent metal nano wire layer is directly grown in flexible, transparent metal by spraying preparation, nano zinc oxide material layer
On nano wire.
3. as described in claim 1 based on metal nanometer line/nano zinc oxide material ultraviolet light transducer, feature exists
In the top electrode layer be flexibility, transparent metal nano wire or the metal deposited on nano zinc oxide material layer by mask plate
Film layer, point electrode are located on top electrode layer.
4. as described in claim 1 based on metal nanometer line/nano zinc oxide material ultraviolet light transducer, feature exists
In the substrate be PET, PDMS, PI.
5. a kind of prepare as described in claim 1 based on metal nanometer line/nano zinc oxide material ultraviolet light transducer
Method, it is characterised in that comprise the steps of:
S1: on flexible substrates with spraying technology deposit one layer of metal nanometer line layer, the thickness of metal nanometer line layer at 5-50 μm,
Sheet resistance is less than 25 Ω .sq–1；
S2: fixing mask plate on the metal nanometer line substrate prepared, in drop coating seed-solution above, deposits one layer of oxidation
Zinc film layer as seed layer, obtain insert refer to electrode shape film, be subsequently placed in the beaker of hot bath, using containing zinc from
Substrate is inserted vertically into reaction solution and is fixed by the alkaline reaction solution of son；
S3: reacting 1-8h in 70-95 DEG C of water-bath, cleans up substrate with deionized water after reaction, is placed in baking oven and dries
It is dry, obtain zinc oxide array；
S4: depositing point electrode on metal nanometer line layer 2, obtains to the ultraviolet zinc-oxide nano sensor for having fine susceptibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710533167.8A CN107402068B (en) | 2017-07-03 | 2017-07-03 | It is a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710533167.8A CN107402068B (en) | 2017-07-03 | 2017-07-03 | It is a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107402068A CN107402068A (en) | 2017-11-28 |
| CN107402068B true CN107402068B (en) | 2019-02-19 |
Family
ID=60404851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710533167.8A Active CN107402068B (en) | 2017-07-03 | 2017-07-03 | It is a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107402068B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267488B (en) * | 2017-12-21 | 2020-08-11 | 南京邮电大学 | Gas sensor based on copper oxide/zinc oxide heterostructure and preparation method thereof |
| CN108630766B (en) * | 2018-03-29 | 2020-03-24 | 佛山市顺德区中山大学研究院 | Flexible ultraviolet light detector and preparation method thereof |
| CN108649094B (en) * | 2018-05-14 | 2020-08-14 | 南京邮电大学 | Ultraviolet light detector with Cu/CuI/ZnO structure and preparation method thereof |
| CN109341513B (en) * | 2018-11-06 | 2020-06-02 | 广州大学 | Flexible strain electronic sensor with bacteria adhesion prevention function and preparation method thereof |
| CN115784295A (en) * | 2022-11-28 | 2023-03-14 | 哈尔滨工业大学（深圳） | Zinc oxide with three-dimensional hybrid structure and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120108370A (en) * | 2011-03-24 | 2012-10-05 | 성균관대학교산학협력단 | Transparent zno nanostructure-based ultraviolet photodectors and fire monitoring apparatus using transparent zno nanostructure-based ultraviolet photodectors |
| CN106057960A (en) * | 2016-06-28 | 2016-10-26 | 兰建龙 | Heterojunction array based ultraviolet detector and manufacturing method thereof |
| CN106057956A (en) * | 2016-06-27 | 2016-10-26 | 浙江大学 | Ionic-liquid-gel-electrolyte-based quasi-solid flexible self-powered ZnO-based ultraviolet detector and preparation method thereof |
| CN106409975A (en) * | 2016-11-17 | 2017-02-15 | 北京工业大学 | Customizable high-gain ZnO nanowire array UV detector and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9954125B2 (en) * | 2013-11-12 | 2018-04-24 | Forwarding Technology Ltd | Light spot position detector with an array of nanorods |
-
2017
- 2017-07-03 CN CN201710533167.8A patent/CN107402068B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120108370A (en) * | 2011-03-24 | 2012-10-05 | 성균관대학교산학협력단 | Transparent zno nanostructure-based ultraviolet photodectors and fire monitoring apparatus using transparent zno nanostructure-based ultraviolet photodectors |
| CN106057956A (en) * | 2016-06-27 | 2016-10-26 | 浙江大学 | Ionic-liquid-gel-electrolyte-based quasi-solid flexible self-powered ZnO-based ultraviolet detector and preparation method thereof |
| CN106057960A (en) * | 2016-06-28 | 2016-10-26 | 兰建龙 | Heterojunction array based ultraviolet detector and manufacturing method thereof |
| CN106409975A (en) * | 2016-11-17 | 2017-02-15 | 北京工业大学 | Customizable high-gain ZnO nanowire array UV detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107402068A (en) | 2017-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107402068B (en) | It is a kind of based on metal nanometer line/nano zinc oxide material ultraviolet light transducer | |
| CN106205774B (en) | A kind of electrocondution slurry and transparent conducting coating | |
| Mani et al. | Selective detection of ammonia using spray pyrolysis deposited pure and nickel doped ZnO thin films | |
| WO2019086038A1 (en) | Conductive fabric and preparation method therefor | |
| CN109580723B (en) | Preparation method of flexible humidity sensor and product | |
| US8722442B2 (en) | Nitrogen-doped transparent graphene film and manufacturing method thereof | |
| Lee et al. | Fabrication of tin oxide film by sol–gel method for photovoltaic solar cell system | |
| CN106910551B (en) | A kind of plating metal enhancing transparent conductive film and preparation method thereof | |
| US20140069488A1 (en) | Conductive member, method of producing the same, touch panel, and solar cell | |
| CN105989911B (en) | A kind of graphene and metal nanometer line composite transparent conductive plastic film and preparation method and application | |
| CN107316708A (en) | The preparation method of the peelable resin compounded transparent conductive film of nano silver wire | |
| Kwon et al. | Enhancement of the benzene-sensing performance of Si nanowires through the incorporation of TeO2 heterointerfaces and Pd-sensitization | |
| CN104508609A (en) | Method of manufacturing a transparent tactile surface and tactile surface obtained by such a method | |
| CN108707997A (en) | Redox graphene coats the preparation method of copper nano-wire conducing composite material | |
| CN106152930A (en) | A kind of highly sensitive flexible wearable strain transducer and low-cost production's method thereof | |
| Duan et al. | Fabrication of flexible Al-doped ZnO films via sol–gel method | |
| CN109244158A (en) | A kind of gallium oxide field effect transistor day blind detector and its manufacture craft | |
| KR101500192B1 (en) | Transparent conductive films including graphene layer and mathod for manufacturing the same | |
| CN107610814B (en) | Transparent electrode based on ultrathin metal grid and preparation method thereof | |
| Klochko et al. | Efficient biodegradable flexible hydrophobic thermoelectric material based on biomass-derived nanocellulose film and copper iodide thin nanostructured layer | |
| Nishi et al. | Gallium-doped zinc oxide nanoparticle thin films as transparent electrode materials with high conductivity | |
| CN108267488B (en) | Gas sensor based on copper oxide/zinc oxide heterostructure and preparation method thereof | |
| CN108007990B (en) | One kind being based on WO3ZnO nano column biosensor of@Au nuclear shell structure quantum point and preparation method thereof | |
| CN107103944A (en) | A kind of oriented alignment method of metal nanometer line | |
| CN107731352B (en) | Flexible electronic glass transparent conductive oxide film circuit preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 210003 new model road 66, Gulou District, Nanjing, Jiangsu Applicant after: Nanjing Post & Telecommunication Univ. Address before: 210023 9 Wen Yuan Road, Qixia District, Nanjing, Jiangsu. Applicant before: Nanjing Post & Telecommunication Univ. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20171128 Assignee: Nanjing Yipu Advanced Materials Research Institute Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2021980007198 Denomination of invention: A UV sensor based on metal nanowires / ZnO nanomaterials Granted publication date: 20190219 License type: Common License Record date: 20210802 |
|
| EE01 | Entry into force of recordation of patent licensing contract |