CN107396466A - Electric slurry and preparation method thereof, thick film circuit chip thermal source and preparation method thereof - Google Patents
Electric slurry and preparation method thereof, thick film circuit chip thermal source and preparation method thereof Download PDFInfo
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- CN107396466A CN107396466A CN201710532724.4A CN201710532724A CN107396466A CN 107396466 A CN107396466 A CN 107396466A CN 201710532724 A CN201710532724 A CN 201710532724A CN 107396466 A CN107396466 A CN 107396466A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
Abstract
The present invention relates to one kind to prepare thick film circuit electric slurry, including solid phase components and organic solvent carriers；Wherein, the weight of solid phase components and organic solvent carriers ratio is 65~90：35~10, the solid phase components include graphene or graphene oxide and at least one rare earth oxide.It is provided by the invention to prepare thick film circuit electric slurry, micro graphene or graphite alkenes particle are distributed in thick film circuit layer and thick film dielectric layer by it, the fine grid of carbon micro Nano material of formation then improves the electrical property of thick film circuit, hot property, chemical property and the thermal conductivity at hot interface in a thickness direction the order of magnitude, and the heat dispersion and mechanical strength of high-power thick-film integrated circuit greatly improved.
Description
Technical field
The present invention relates to one kind to prepare high-power thick-film integrated circuit electric slurry, and especially one kind prepares thick film circuit
Chip thermal source electric slurry.
Background technology
In intelligent electric-heating source domain, thick film circuit is typically divided into cryotronics slurry with electric slurry：65-250 DEG C, in
Warm electron slurry：250-600 DEG C and high-temperature electronic slurry：600-1200℃.600-1200 DEG C of thick film circuit of high temperature heat source, is intelligence
The high-end level of energy technology of heat source.Low-temperature heat source application is wider, and the frequency of middle temperature-heat-source application is not high, high temperature heat source due to
Technical sophistication, difficulty are big, are mostly extraordinary application.
Although recently during the last ten years, universal electric slurry in China's is quickly grown, mainly with conductor paste (such as silver paste, aluminium
Slurry) based on, the positive silver wherein in silver paste is more by external import.Namely China still can not preferably meet universal electric slurry at present
Application demand, the application demand of special electronic slurry is even more to be difficult to meet.
Drawbacks described above is that those skilled in the art it is expected to overcome.
The content of the invention
(1) technical problems to be solved
In order to solve the above mentioned problem of prior art, the present invention provides one kind and prepares thick film circuit electric slurry, and it will
Micro graphene or graphite alkenes particle is distributed in thick film circuit layer and thick film dielectric layer, is situated between in thick film circuit layer and thick film
Improve to the fine grid number magnitude of carbon micro Nano material formed in matter layer the electrical property of thick film circuit, hot property, chemically
Can and the thermal conductivity at hot interface, heat dispersion and the machinery that high-power thick-film integrated circuit greatly improved are strong in a thickness direction
Degree.
(2) technical scheme
In a first aspect, in order to achieve the above object, the main technical schemes that the present invention uses include：
One kind prepares thick film circuit electric slurry, including solid phase components and organic solvent carriers；Wherein, solid phase components and
The weight ratio of organic solvent carriers is 65~90：35~10, the solid phase components are comprising graphene or graphene oxide and extremely
A kind of few rare earth oxide.
Specifically, in the electric slurry, the solid phase components include function phase powder and microcrystalline glass powder, the work(
The graphene or the graphene oxide can be included in phase powder, the graphene is graphene powder, the graphite oxide
Alkene is graphene oxide powder；One kind at least one rare earth oxide is included in the microcrystalline glass powder.
Specifically, in the electric slurry, the rare earth oxide in the microcrystalline glass powder is La2O3。
Specifically, in the electric slurry, the graphene powder and described at least one are included in the function phase powder
One or more in kind rare earth oxide.
Preferably, in the electric slurry, the rare earth oxide in the function phase powder is RuO2And Y2O3。
Specifically, in the electric slurry, the particle diameter of the function phase powder is less than 3 μm.
Specifically, in the electric slurry, the organic solvent carriers are by main solvent, thickener, surfactant, thixotroping
One or more in agent, gelling agent, diluent, which are mixed with, to be formed, and its viscosity is 150-280mPas.
Preferably, in the electric slurry, the viscosity of the electric slurry is 168~289mPas.
As one embodiment of the present of invention, in the electric slurry,
The weight of the solid phase components and organic solvent carriers ratio is 65~85：35~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 75~55：25~45；
The function phase powder includes aluminium powder, palladium powder and graphene powder, and its weight ratio is：75~79：15~
40.5：10~0.5；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its
Weight ratio is：20~60：5~35：10~35：10~30：1~10：0.3~8.
As another embodiment of the present invention, in the electric slurry,
The weight of the solid phase components and organic solvent carriers ratio is 65~85：35~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 75~55：25~45；
The function phase powder includes RuO2Powder, Y2O3Powder, CuO powders and graphene powder, its weight ratio are 75
~59：15~40.5：10~0.5：1~10；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its
Weight ratio is：20~60：5~35：10~35：10~30：1~10：0.3~8.
As another embodiment of the present invention, in the electric slurry,
The weight of the solid phase components and organic solvent carriers ratio is 70~90：30~10；
The weight ratio of the function phase powder and the microcrystalline glass powder is 99.4~0.6：0.6~6；
The function phase powder includes aluminium powder, palladium powder and graphene powder, and its weight ratio is：0.6~10：99~
82：0.4~8；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its
Weight ratio is：20~60：5~35：10~35：10~30：1~15：0.3~15.
As another embodiment of the present invention, in the electric slurry,
The weight of the solid phase components and organic solvent carriers ratio is 65~35：85~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 99~90：1~10；
The function phase powder is graphene oxide powder；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Co2O3、B2O3And La2O3, its
Weight ratio is：30~65：5~26：15~38：0.05~6：2~16：0.3~15.
Second aspect, the invention provides a kind of method for the electric slurry for preparing and illustrating in the first aspect, including：
Step 1) prepares function phase powder
The each component included by function phase powder is weighed in proportion；
Step 2) prepares microcrystalline glass powder
Each oxide component that microcrystalline glass powder is included is weighed in proportion, and weighs appropriate Nucleating Agent；After weighing
Each component and Nucleating Agent it is well mixed after melting, smelting temperature is 800~1200 degrees Celsius, and small in peak value insulation 1~5
When；Glass dregs are obtained after water quenching；Grind the glass dregs 2~4 hours, obtain the devitrified glass that particle mean size is less than or equal to 5 μm
Powder；
Step 3) prepares organic solvent carriers
The one or more in main solvent, thickener, surfactant, thixotropic agent and gelling agent are weighed by weight, will
Each dispensing after weighing, which is placed in 80~100 DEG C of water, to be dissolved a few hours, and adjusts the content of thickener and diluent, is glued
Spend the organic solvent carriers for 150~280mPas；
Step 4) prepares electric slurry
Function phase powder, microcrystalline glass powder and organic solvent carriers are weighed in proportion, function phase powder after weighing,
Grind 1~3 hour after microcrystalline glass powder and organic solvent carriers mixing and roll mixing, adjustment thickener and diluent contain
Amount, obtain the electric slurry that viscosity is 168~289mPas.
The third aspect, based on the electric slurry illustrated in first aspect, present invention also offers a kind of thick film circuit chip
Thermal source, including：
Substrate；
It is successively set on the thick film dielectric layer and thick film circuit layer of the substrate surface, thick film dielectric layer and the thick film electricity
Road floor comprises at least one group, and the thick film circuit layer includes at least one predetermined function thick film circuit and at least one thick film electricity
Pole；The predetermined function thick film circuit includes thick-film resistor circuit；
The thick-film resistor circuit is prepared by the electric slurry for being used to prepare thick-film resistor circuit illustrated in first aspect
Form；
The thick membrane electrode is prepared by the electric slurry for being used to prepare thick membrane electrode illustrated in first aspect；
The thick film dielectric layer is prepared by the electric slurry for being used to prepare thick film dielectric layer illustrated in first aspect.
Preferably, the predetermined function thick film circuit also includes thick-film thermistor circuit；
The thick-film thermistor circuit is used to prepare thick-film thermistor electric circuit electronics technical slurry by what is illustrated in first aspect
Material is prepared.
Preferably, the substrate is in plane or curved surface；
Thick film dielectric layer and the thick film circuit layer is including multigroup, and each group is stacked or the light in same plane or curved surface
Sliding splicing ground is set；
At least one predetermined function thick-film resistor circuit provides at least one predetermined heat source temperature.
Preferably, the surface of the substrate or it is internally provided with water channel.
Fourth aspect, present invention also offers a kind of method for the chip thermal source for preparing and illustrating in a third aspect, including：
Step 1)：The substrate for being provided with water channel is prepared using quick molding method；
Step 2)：The electric slurry illustrated in the first aspect is printed on by substrate surface using screen printing technique and burnt
Knot.
5th aspect, present invention also offers a kind of method for the chip thermal source for preparing and illustrating in a third aspect, including：
Step 1)：The electric slurry illustrated in the first aspect is prepared into by green band using the tape casting, and 80~150
Dried 30~50 minutes in machine at DEG C, obtain thickness as 0.01~2mm porcelain band raw embryo；Described in laser cutting and/or punch process
Porcelain band raw embryo, obtains ceramic chips；
Step 2)：Ceramic chips are pasted onto on substrate with bonding agent, the substrate for being pasted with ceramic chips is placed in high temperature insostatic pressing (HIP)
In machine, it is sintered in nitrogen argon atmospher by temperature curve.
(3) beneficial effect
The present invention provides one kind and prepares thick film circuit electric slurry, and it divides micro graphene or graphite alkenes particle
It is scattered in thick film circuit layer and thick film dielectric layer, the carbon micro Nano material formed in thick film circuit layer and thick film dielectric layer is fine
Improve to grid number magnitude electrical property, hot property, chemical property and the heat conduction at hot interface in a thickness direction of thick film circuit
Rate, the heat dispersion and mechanical strength of high-power thick-film integrated circuit greatly improved.
The method provided by the invention for preparing electric slurry, good manufacturability, production efficiency are high.
Chip thermal source provided by the invention, can be provided in multiple planes or curved surface gradient distribution or cross direction profiles it is more
Individual predetermined heat source temperature region；Chip heat source temperature field provided by the invention is uniform, thermal response is fast, power density is big, temperature model
Wide, compact-sized, energy-conserving and environment-protective and safe and reliable are enclosed, a kind of fossil energy such as coal burning boiler, thermo oil boiler, gas boiler is may replace, is
Health, green, cleaning, efficient thermal source.
The method provided by the invention for preparing chip thermal source, easy to operate, good manufacturability, production efficiency are high.
Brief description of the drawings
Fig. 1 is the successively decomposing schematic representation of the chip thermal source for being provided with water channel of one embodiment of the invention；
Fig. 2 is the part sectioned view of the substrate of the chip thermal source for being provided with water channel of one embodiment of the invention.
【Description of reference numerals】
1：Substrate；
2：Insulating barrier；
3：Zone of heating；
4：Coating；
5：Binding post；
6：Water channel；
A：First group of water channel；
B：Second group of water channel.
Embodiment
In order to preferably explain the present invention, in order to understand, below in conjunction with the accompanying drawings, by embodiment, to this hair
It is bright to be described in detail.
The embodiment of the present invention prepares thick film circuit electric slurry, including solid phase components and organic solvent carriers；Wherein,
The weight of solid phase components and organic solvent carriers ratio is 65~90：35~10, the solid phase components include graphene or oxidation stone
Black alkene and at least one rare earth oxide.
The thick film circuit electric slurry for preparing of the embodiment of the present invention disperses micro graphene or graphite alkenes particle
Into thick film circuit layer and thick film dielectric layer, the fine net of carbon micro Nano material that is formed in thick film circuit layer and thick film dielectric layer
Improve the electrical property of thick film circuit, hot property, chemical property and the thermal conductivity at hot interface in a thickness direction the lattice order of magnitude,
The heat dispersion and mechanical strength of high-power thick-film integrated circuit greatly improved.
Specifically, in the electric slurry, the solid phase components include function phase powder and microcrystalline glass powder, the work(
The graphene or the graphene oxide can be included in phase powder, the graphene is graphene powder, the graphite oxide
Alkene is graphene oxide powder；One kind at least one rare earth oxide is included in the microcrystalline glass powder.
Graphene or graphene oxide are added in the formula of electric slurry, the compatibility, wettability, heat of slurry can be made
Performance, electrical property, chemical property, manufacturability, adaptivity are significantly increased.Find that graphene proportioning dosage exists in experiment
Between 0.3%~10%, below 3 μm of solid phase powder particle diameter, micron-sized powder accounts for 65%, performance when nanometer grade powder accounts for 35%
Most preferably.And nanoscale graphite alkene powder constituents are higher, high warm performance, electric conductivity, heat conductivility, chemical property are better.
In view of graphene cost, optimum ratio dosage is between 0.3%~10%.
Specifically, in the electric slurry, the rare earth oxide in the microcrystalline glass powder is La2O3。
Rare-earth elements of lanthanum is applied in devitrified glass, may replace the Calcium compounds in devitrified glass, micro- so as to substitute or reduce
Calcium composition in crystal glass, realize the purpose of devitrified glass finished product loss of weight.
Specifically, in the electric slurry, in the function phase powder can include the graphene powder and it is described extremely
One or more in a kind of few rare earth oxide.
Preferably, in the electric slurry, the rare earth oxide in the function phase powder is RuO2And Y2O3。
Specifically, in the electric slurry, the organic solvent carriers are by main solvent, thickener, surfactant, thixotroping
One or more in agent, gelling agent, diluent, which are mixed with, to be formed, and its viscosity is 150-280mPas.
Specifically, the organic solvent carriers are by terpinol, ATBC, ethyl cellulose, NC Nitroncellulose, hydrogen
One or more in change castor oil, lecithin and butyl carbitol, which are mixed with, to be formed.
Preferably, in the electric slurry, the viscosity of the electric slurry is 168~289mPas.
As one embodiment of the present of invention, in the electric slurry for preparing thick-film resistor circuit,
The weight of the solid phase components and organic solvent carriers ratio is 65~85：35~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 75~55：25~45；
The function phase powder includes aluminium powder, palladium powder and graphene powder, and its weight ratio is：75~79：15~
40.5：10~0.5；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its
Weight ratio is：20~60：5~35：10~35：10~30：1~10：0.3~8.
In the specific implementation, TiO can also be included in the microcrystalline glass powder2And ZrO2, its weight ratio is 1~8：1~
10。
In the specific implementation, in the electric slurry, the organic solvent carriers include following components：Terpinol, lemon
Lemon acid tributyl, ethyl cellulose, NC Nitroncellulose, hydrogenated castor oil and lecithin, its weight ratio are：68~78：2~18：
0.4~9：0.4~9：0.1~6：0.1~6.
As another embodiment of the present invention, in the electric slurry for preparing thick-film thermistor circuit,
The weight of the solid phase components and organic solvent carriers ratio is 65~85：35~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 75~55：25~45；
The function phase powder includes RuO2Powder, Y2O3Powder, CuO powders and graphene powder, its weight ratio are 75
~59：15~40.5：10~0.5：1~10；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its
Weight ratio is：20~60：5~35：10~35：10~30：1~10：0.3~8.
In the specific implementation, TiO can also be included in the microcrystalline glass powder2And ZrO2, its weight ratio is 1~8：1~
10。
In the specific implementation, in the electric slurry, the organic solvent carriers include following components：Terpinol, lemon
Lemon acid tributyl, ethyl cellulose, NC Nitroncellulose, hydrogenated castor oil and lecithin, its weight ratio are：68~78：2~18：
0.4~9：0.4~9：0.1~6：0.1~6.
As another embodiment of the present invention, in the electric slurry for preparing thick membrane electrode,
The weight of the solid phase components and organic solvent carriers ratio is 70~90：30~10；
The weight ratio of the function phase powder and the microcrystalline glass powder is 99.4~0.6：0.6~6；
The function phase powder includes aluminium powder, palladium powder and graphene powder, and its weight ratio is：0.6~10：99~
82：0.4~8；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its
Weight ratio is：20~60：5~35：10~35：10~30：1~15：0.3~15.
In the specific implementation, TiO can also be included in the microcrystalline glass powder2And ZrO2, its weight ratio is 1~10：1
~10.
In the specific implementation, in the electric slurry, the organic solvent carriers include following components：Terpinol, lemon
Lemon acid tributyl, ethyl cellulose, NC Nitroncellulose, hydrogenated castor oil and lecithin, its weight ratio are：60~98：10~30：
2~10：1~5：0.1~5：0.1~5.
As another embodiment of the present invention, in the electric slurry for preparing thick film dielectric layer,
The weight of the solid phase components and organic solvent carriers ratio is 65~35：85~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 99~90：1~10；
The function phase powder is graphene oxide powder；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Co2O3、B2O3And La2O3, its
Weight ratio is：30~65：5~26：15~38：0.05~6：2~16：0.3~15.
In the specific implementation, TiO can also be included in the microcrystalline glass powder2And ZrO2, its weight ratio is 1~10：1
~10.
In the specific implementation, in the electric slurry, the organic solvent carriers include following components：Butyl card must
Alcohol, ATBC, ethyl cellulose, NC Nitroncellulose, hydrogenated castor oil and lecithin, its weight ratio are：66~89：5
~15：0.5~10：0.1~5：0.1~5.
Second aspect, the method for the electric slurry that the preparation of the embodiment of the present invention illustrates in the first aspect, including：
Step 1) prepares function phase powder
The each component included by function phase powder is weighed in proportion；
Step 2) prepares microcrystalline glass powder
Each oxide component that microcrystalline glass powder is included is weighed in proportion, and weighs appropriate Nucleating Agent；After weighing
Each component and Nucleating Agent it is well mixed after melting, smelting temperature is 800~1200 degrees Celsius, and small in peak value insulation 1~5
When；Glass dregs are obtained after water quenching；Grind the glass dregs 2~4 hours, obtain the devitrified glass that particle mean size is less than or equal to 5 μm
Powder；
Step 3) prepares organic solvent carriers
The one or more in main solvent, thickener, surfactant, thixotropic agent and gelling agent are weighed in proportion, will be claimed
Each dispensing after taking, which is placed in 80~100 DEG C of water, to be dissolved a few hours, and adjusts the content of thickener and diluent, obtains viscosity
For 150~280mPas organic solvent carriers；
Step 4) prepares electric slurry
Function phase powder, microcrystalline glass powder and organic solvent carriers are weighed in proportion, function phase powder after weighing,
Grind 1~3 hour after microcrystalline glass powder and organic solvent carriers mixing and roll mixing, adjustment thickener and diluent contain
Amount, obtain the electric slurry that viscosity is 168~289mPas.
The method for preparing electric slurry of the embodiment of the present invention, good manufacturability, production efficiency are high.
The third aspect, based on the electric slurry illustrated in first aspect, the thick film circuit chip thermal source of the embodiment of the present invention,
Including：
Substrate；
It is successively set on the thick film dielectric layer and thick film circuit layer of the substrate surface, thick film dielectric layer and the thick film electricity
Road floor comprises at least one group, and the thick film circuit layer includes at least one predetermined function thick film circuit and at least one thick film electricity
Pole；The predetermined function thick film circuit includes thick-film resistor circuit；
The thick-film resistor circuit is prepared by the electric slurry for being used to prepare thick-film resistor circuit illustrated in first aspect
Form；
The thick membrane electrode is prepared by the electric slurry for being used to prepare thick membrane electrode illustrated in first aspect；
The thick film dielectric layer is prepared by the electric slurry for being used to prepare thick film dielectric layer illustrated in first aspect.
When it is implemented, the substrate can be metal substrate or non-metal base plate.Non-metal base plate can be ceramic base
Plate, crystallite glass substrate and polymer composite substrate etc..Specifically, it can be following all kinds of ceramics：Aluminum oxide, nitridation
Aluminium, carborundum, aluminium silicon carbide.Devitrified glass can be then high thermal conductivity coefficient rare earth oxide microcrystalline glass in series.Macromolecule is compound
Material substrate is then primarily referred to as Kapton flexible base board.
Preferably, the predetermined function thick film circuit also includes thick-film thermistor circuit；
The thick-film thermistor circuit is used to prepare thick-film thermistor electric circuit electronics technical slurry by what is illustrated in first aspect
Material is prepared.
It should be noted that the R-T curves of thick-film thermistor circuit are linear, it is used as in thick film circuit chip thermal source
Feedback circuit, the closed-loop control of chip heat source temperature is realized, can further lift the performance and quality of thermal source.
Preferably, the substrate is in plane or curved surface；
Thick film dielectric layer and the thick film circuit layer is including multigroup, and each group is stacked or the light in same plane or curved surface
Sliding splicing ground is set；
At least one predetermined function thick-film resistor circuit provides at least one predetermined heat source temperature.
When for heating water load, the thick film circuit chip thermal source of the embodiment of the present invention is set on the surface of substrate or inside
It is equipped with least one set of water channel.Water channel is arranged on substrate surface, simply, conveniently, mounting process is good first.By water channel integrally
It is arranged on inside substrate, also water channel and substrate becomes one formula so that water load directly contacts with substrate, can be obvious
Heat transfer efficiency is improved, reduces the thermal losses in pipe fitting；In addition, decrease number of parts so that more compact structure.
Significantly improve heat transfer efficiency, and more compact structure.
Specifically, the water channel of substrate surface is arranged on, silica gel pipe fitting, metal tube or ceramic pipe fitting can be used.
It is construed as, water channel here is the path that water load flows through.
In all multi-heat sources, coal thermal source, oily thermal source, gas thermal source are the disposable energy, belong to high temperature heat source category.High temperature heat source
Atmospheric environment is caused to deteriorate, haze, Lovell Ninos in distress, disaster frequency are raw, and iceberg is melted, sea level rise, the rise of earth surface temperature,
Disruption of ecological balance, threaten human survival.
Now, most influence human lives is highly energy-consuming traditional heat source-electrothermal tube, and its core is resistance wire, resistance wire
It is the technology of U.S.'s the '30s.Known, electrothermal tube category thermal inertia element, heat source temperature is high, the thermal efficiency is low, service life, peace
It is undisputable fact that overall coefficient, which enjoys query,.
The chip thermal source of the embodiment of the present invention, gradient distribution or cross direction profiles can be provided in multiple planes or curved surface
Multiple predetermined heat source temperature regions；Chip heat source temperature field provided by the invention is uniform, thermal response is fast, power density is big, temperature
Scope is wide, compact-sized, energy-conserving and environment-protective and safe and reliable, may replace a kind of fossil energy such as coal burning boiler, thermo oil boiler, gas boiler,
It is health, green, cleaning, efficient thermal source.
Fourth aspect, the method for the chip thermal source that the preparation of the embodiment of the present invention illustrates in a third aspect, including：
Step 1)：The substrate for being provided with water channel is prepared using quick molding method；
Step 2)：The electric slurry illustrated in the first aspect is printed on by substrate surface using screen printing technique and burnt
Knot.
When it is implemented, according to substrate material, the quick molding method that can be selected includes 3D printing technique, injection etc..
3D printing technique is applied in thick film circuit production, and multigroup water channel, Ke Yiti can be flexibly set inside substrate
The consistency of " film ", uniformity in high thick film circuit, the integrated level for the chip thermal source being prepared, hot property, electrical property, temperature control
Performance is more excellent compared with other molding modes.
The method for preparing chip thermal source of the embodiment of the present invention, it is with short production cycle, energy consumption is low, energy-saving material-saving, product quality
Excellent and process stabilizing.
5th aspect, present invention also offers a kind of method for the chip thermal source for preparing and illustrating in a third aspect, including：
Step 1)：The electric slurry illustrated in the first aspect is prepared into by green band using the tape casting, and 80~150
Dried 30~50 minutes in machine at DEG C, obtain thickness as 0.01~2mm porcelain band raw embryo；Described in laser cutting and/or punch process
Porcelain band raw embryo, obtains ceramic chips；
Step 2)：Ceramic chips are pasted onto on substrate with bonding agent, the substrate for being pasted with ceramic chips is placed in high temperature insostatic pressing (HIP)
In machine, it is sintered in nitrogen argon atmospher by temperature curve.
Specifically, bonding agent can be glass cement or silica gel.High temperature insostatic pressing (HIP) (hot isostatic pressing, referred to as
HIP it is) a kind of to integrate high temperature, the process production techniques of high pressure.Under the collective effect of HTHP, workpiece is sintered
All directions are balanced to be pressurized.The consistency of film forming is high, uniformity is good, excellent performance.With it is with short production cycle, process is few, energy consumption is low,
The features such as spillage of material is small.
Chip thermal source for including thick film circuit as shown by Fig. 1 to 2, in the chip thermal source, metal substrate 1
It is orderly arranged outside each insulating barrier 2, zone of heating 3 and coating 4.Zone of heating 3 is thick-film resistor circuit layer, and it is connected with thick membrane electrode
Connect；Zone of heating 3 can also include thermistor feedback circuit.A side opening of the thick membrane electrode close to substrate 1；Binding post 5 with
Thick membrane electrode is connected.
Specifically, insulating barrier 2 and coating 4 are prepared by the electric slurry for preparing thick film dielectric layer.Water channel 6
The inside of substrate 1 is arranged on, the fluid in water channel is heated by zone of heating 3.Specifically, water channel 6 refers to including sparse dotted line in Fig. 2
The first group of water channel A shown and second group of water channel B of intensive dotted line instruction, water channel 6 is arranged on inside metal tubular substrate, is 3D
Printing integrated chemical conversion type.
It should be appreciated that the successively decomposing schematic representation that what is provided in Fig. 1 be provided with the chip thermal source of water channel is not used to refer to
Show or limit the assembly method of the chip thermal source.
Using the Thermistor of the embodiment of the present invention, the electrical property such as table for the thick-film thermistor circuit being prepared
Listed by 1.
The electrical property of the thick-film thermistor of table 1
Using the Thermistor of the embodiment of the present invention, the thick-film thermistor being prepared using method for printing screen
The physical function parameter of circuit is as listed in table 2.
The physical function parameter electrical property of the thick-film thermistor circuit of table 2 (by taking silk screen print method as an example)
The technical principle of the present invention is described above in association with embodiment.These descriptions are intended merely to explain the present invention
Principle, and limiting the scope of the invention can not be construed in any way.Based on explanation herein, art technology
Personnel, which need not pay creative work, can associate the other embodiments of the present invention, and these modes fall within this hair
Within bright protection domain.
Claims (19)
1. one kind prepares thick film circuit electric slurry, it is characterised in that including solid phase components and organic solvent carriers；Wherein,
The weight of solid phase components and organic solvent carriers ratio is 65~90：35~10, the solid phase components include graphene or oxidation stone
Black alkene and at least one rare earth oxide.
2. electric slurry according to claim 1, it is characterised in that the solid phase components include function phase powder and crystallite
Glass powder, the graphene or the graphene oxide is included in the function phase powder, the graphene is Graphene powder
Body, the graphene oxide are graphene oxide powder；At least one rare-earth oxidation is included in the microcrystalline glass powder
One kind in thing.
3. electric slurry according to claim 2, it is characterised in that the rare earth oxide in the microcrystalline glass powder is
La2O3。
4. electric slurry according to claim 2, it is characterised in that the Graphene powder is included in the function phase powder
One or more in body and at least one rare earth oxide.
5. electric slurry according to claim 4, it is characterised in that the rare earth oxide in the function phase powder is
RuO2And Y2O3。
6. electric slurry according to claim 2, it is characterised in that the particle diameter of the function phase powder is less than 3 μm.
7. according to the electric slurry any one of claim 1-3, it is characterised in that the organic solvent carriers are molten by leading
One or more in agent, thickener, surfactant, thixotropic agent, gelling agent, diluent, which are mixed with, to be formed, and its viscosity is
150-280mPas。
8. according to the electric slurry any one of claim 1-3, it is characterised in that the viscosity of the electric slurry is
168~289mPas.
9. the electric slurry according to Claims 2 or 3, it is characterised in that
The weight of the solid phase components and organic solvent carriers ratio is 65~85：35~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 75~55：25~45；
The function phase powder includes aluminium powder, palladium powder and graphene powder, and its weight ratio is：75~79：15~40.5：
10~0.5；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its weight
Than for：20~60：5~35：10~35：10~30：1~10：0.3~8.
10. the electric slurry according to claim 4 or 5, it is characterised in that
The weight of the solid phase components and organic solvent carriers ratio is 65~85：35~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 75~55：25~45；
The function phase powder includes RuO2Powder, Y2O3Powder, CuO powders and graphene powder, its weight ratio be 75~
59：15~40.5：10~0.5：1~10；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its weight
Than for：20~60：5~35：10~35：10~30：1~10：0.3~8.
11. the electric slurry according to Claims 2 or 3, it is characterised in that
The weight of the solid phase components and organic solvent carriers ratio is 70~90：30~10；
The weight ratio of the function phase powder and the microcrystalline glass powder is 99.4~0.6：0.6~6；
The function phase powder includes aluminium powder, palladium powder and graphene powder, and its weight ratio is：0.6~10：99~82：
0.4~8；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Bi2O3、B2O3And La2O3, its weight
Than for：20~60：5~35：10~35：10~30：1~15：0.3~15.
12. the electric slurry according to Claims 2 or 3, it is characterised in that
The weight of the solid phase components and organic solvent carriers ratio is 65~35：85~15；
The weight ratio of the function phase powder and the microcrystalline glass powder is 99~90：1~10；
The function phase powder is graphene oxide powder；
Following oxide component is included in the microcrystalline glass powder：SiO2、Al2O3、CaO、Co2O3、B2O3And La2O3, its weight
Than for：30~65：5~26：15~38：0.05~6：2~16：0.3~15.
A kind of 13. method for preparing the electric slurry as any one of claim 9-12, it is characterised in that including：
Step 1) prepares function phase powder
The each component included by function phase powder is weighed in proportion；
Step 2) prepares microcrystalline glass powder
Each oxide component that microcrystalline glass powder is included is weighed in proportion, and weighs appropriate Nucleating Agent；It is each after weighing
Melting after component and Nucleating Agent are well mixed, smelting temperature are 800~1200 degrees Celsius, and are incubated 1~5 hour in peak value；Water
Glass dregs are obtained after quenching；Grind the glass dregs 2~4 hours, obtain the microcrystalline glass powder that particle mean size is less than or equal to 5 μm；
Step 3) prepares organic solvent carriers
The one or more in main solvent, thickener, surfactant, thixotropic agent and gelling agent are weighed in proportion, after weighing
Each dispensing be placed in 80~100 DEG C of water and dissolve 3~6 hours, and adjust the content of thickener and diluent, obtaining viscosity is
150~280mPas organic solvent carriers；
Step 4) prepares electric slurry
Function phase powder, microcrystalline glass powder and organic solvent carriers are weighed in proportion, function phase powder, crystallite after weighing
Grind 1~3 hour after glass powder and organic solvent carriers mixing and roll mixing, and adjust containing for thickener and diluent
Amount, obtain the electric slurry that viscosity is 168~289mPas.
A kind of 14. thick film circuit chip thermal source, it is characterised in that including：
Substrate；
It is successively set on the thick film dielectric layer and thick film circuit layer of the substrate surface, thick film dielectric layer and the thick film circuit layer
Including at least one group, the thick film circuit layer includes at least one predetermined function thick film circuit and at least one thick membrane electrode；Institute
Stating predetermined function thick film circuit includes thick-film resistor circuit；
The thick-film resistor circuit is prepared by electric slurry as claimed in claim 9；
The thick membrane electrode is prepared by the electric slurry described in claim 11；
The thick film dielectric layer is prepared by the electric slurry described in claim 12.
15. chip thermal source according to claim 14, it is characterised in that the predetermined function thick film circuit also includes thick film
Thermosensitive resistor and circuit；
The thick-film thermistor circuit is prepared by electric slurry as claimed in claim 10.
16. chip thermal source according to claim 14, it is characterised in that the substrate is in plane or curved surface；
Thick film dielectric layer and the thick film circuit layer is including multigroup, and each group is stacked or the smooth spelling in same plane or curved surface
Ground connection is set；
At least one predetermined function thick-film resistor circuit provides at least one predetermined heat source temperature.
17. chip thermal source according to claim 16, it is characterised in that the surface of the substrate is internally provided with water
Road.
A kind of 18. method for preparing chip thermal source any one of claim 14 to 17, it is characterised in that including：
Step 1)：The substrate for being provided with water channel is prepared using quick molding method；
Step 2)：Electric slurry as any one of claim 9-12 is printed on by substrate table using screen printing technique
Face simultaneously sinters.
A kind of 19. method for preparing chip thermal source any one of claim 14 to 17, it is characterised in that including：
Step 1)：Electric slurry as any one of claim 9-12 is prepared into by green band using the tape casting, and
Dried 30~50 minutes in machine at 80~150 DEG C, obtain thickness as 0.01~2mm porcelain band raw embryo；Laser cutting and/or punching press add
Porcelain band raw embryo, obtains ceramic chips described in work；
Step 2)：Ceramic chips are pasted onto on substrate with bonding agent, the substrate for being pasted with ceramic chips is placed in hot isostatic press,
It is sintered in nitrogen argon atmospher by temperature curve.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110149737A (en) * | 2018-02-12 | 2019-08-20 | 深圳市天合顺微电子有限公司 | A kind of flexible heater element of selfreparing and preparation method thereof |
| CN110519870A (en) * | 2018-05-21 | 2019-11-29 | 中南大学 | A kind of graphene/lowpriced metal alloy conductive material, resistance slurry, heater and its preparation and application |
| CN110690010A (en) * | 2019-10-18 | 2020-01-14 | 泰阳电子(东莞)有限公司 | Preparation method of rare earth high-temperature carbon paste for microcrystalline glass plate |
| CN110996411A (en) * | 2019-12-06 | 2020-04-10 | 武汉新能源研究院有限公司 | Graphene modified inorganic non-metal thick film heating material and preparation method thereof |
| CN111215745A (en) * | 2020-02-19 | 2020-06-02 | 南京理工大学 | Variable process defect control method for laser consolidation conductive slurry |
| CN111935857A (en) * | 2020-08-13 | 2020-11-13 | 联想万像(深圳)科技有限公司 | Resistance slurry and ceramic heating plate using same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202652562U (en) * | 2012-06-11 | 2013-01-02 | 佛山市海辰科技有限公司 | Curved surface printing rare earth thick film circuit intelligent electrical thermal element |
| CN103716924A (en) * | 2013-12-26 | 2014-04-09 | 王克政 | Rare earth thick film circuit electric heating chip and manufacturing technology thereof |
| CN203632890U (en) * | 2013-12-26 | 2014-06-04 | 王克政 | Aluminum bronze Cu+ composite backing rear earth thick film circuit intelligent electrothermal chip |
| CN104318979A (en) * | 2014-09-19 | 2015-01-28 | 王晨 | Composite-material-based thick-film circuit rare earth electrode slurry and preparation process thereof |
| CN104827857A (en) * | 2015-04-03 | 2015-08-12 | 王晨 | Electric vehicle intelligent heater system with PTCR-xthm electric heating chip as heat source |
| CN105472791A (en) * | 2015-12-23 | 2016-04-06 | 东莞珂洛赫慕电子材料科技有限公司 | Rare earth-doped semiconductor infrared radiation thick-film electronic paste and preparation method therefor |
-
2017
- 2017-07-03 CN CN201710532724.4A patent/CN107396466A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202652562U (en) * | 2012-06-11 | 2013-01-02 | 佛山市海辰科技有限公司 | Curved surface printing rare earth thick film circuit intelligent electrical thermal element |
| CN103716924A (en) * | 2013-12-26 | 2014-04-09 | 王克政 | Rare earth thick film circuit electric heating chip and manufacturing technology thereof |
| CN203632890U (en) * | 2013-12-26 | 2014-06-04 | 王克政 | Aluminum bronze Cu+ composite backing rear earth thick film circuit intelligent electrothermal chip |
| CN104318979A (en) * | 2014-09-19 | 2015-01-28 | 王晨 | Composite-material-based thick-film circuit rare earth electrode slurry and preparation process thereof |
| CN104827857A (en) * | 2015-04-03 | 2015-08-12 | 王晨 | Electric vehicle intelligent heater system with PTCR-xthm electric heating chip as heat source |
| CN105472791A (en) * | 2015-12-23 | 2016-04-06 | 东莞珂洛赫慕电子材料科技有限公司 | Rare earth-doped semiconductor infrared radiation thick-film electronic paste and preparation method therefor |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110149737A (en) * | 2018-02-12 | 2019-08-20 | 深圳市天合顺微电子有限公司 | A kind of flexible heater element of selfreparing and preparation method thereof |
| CN110149737B (en) * | 2018-02-12 | 2023-01-17 | 冯嘉俊 | Self-repairing flexible heating element and preparation method thereof |
| CN110519870A (en) * | 2018-05-21 | 2019-11-29 | 中南大学 | A kind of graphene/lowpriced metal alloy conductive material, resistance slurry, heater and its preparation and application |
| CN110519870B (en) * | 2018-05-21 | 2020-06-26 | 中南大学 | Graphene/base metal alloy conductive material, resistance paste, heating element, preparation and application thereof |
| CN110690010A (en) * | 2019-10-18 | 2020-01-14 | 泰阳电子(东莞)有限公司 | Preparation method of rare earth high-temperature carbon paste for microcrystalline glass plate |
| CN110996411A (en) * | 2019-12-06 | 2020-04-10 | 武汉新能源研究院有限公司 | Graphene modified inorganic non-metal thick film heating material and preparation method thereof |
| CN111215745A (en) * | 2020-02-19 | 2020-06-02 | 南京理工大学 | Variable process defect control method for laser consolidation conductive slurry |
| CN111935857A (en) * | 2020-08-13 | 2020-11-13 | 联想万像(深圳)科技有限公司 | Resistance slurry and ceramic heating plate using same |
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