CN107359135A - Transfer bonding structure of integrated device and preparation method thereof in Terahertz antenna sheet - Google Patents
Transfer bonding structure of integrated device and preparation method thereof in Terahertz antenna sheet Download PDFInfo
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- CN107359135A CN107359135A CN201610302700.5A CN201610302700A CN107359135A CN 107359135 A CN107359135 A CN 107359135A CN 201610302700 A CN201610302700 A CN 201610302700A CN 107359135 A CN107359135 A CN 107359135A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
The preparation method of the transfer bonding structure of integrated device in a kind of Terahertz antenna sheet, including step：(1) cushion, barrier layer, n-type GaAs layers and GaAs cryospheres are made successively on a SI-substrate；(2) the GaAs cryospheres are bonded with a polymer substrate；(3) SI-substrate and cushion are peeled off；(4) barrier layer is peeled off.Integrated device on transfer bonding structure prepared by the above method and the piece comprising the structure is also provided.Integrated device containing said structure can reduce THz wave loss, improve utilization ratio, realize that it is detected to micro-example and liquid sample.
Description
Technical field
The invention belongs to semiconductor materials and devices technical field, further to a kind of Terahertz antenna
The transfer bonding structure of integrated device on piece, with and preparation method thereof, and include the transfer bonding junction
Integrated device in the Terahertz antenna sheet of structure.
Background technology
Terahertz (terahertz, THz) radiation refer to frequency 0.1~10THz (wavelength 30~
3000 μm) between electromagnetic wave, its electromagnetic radiation region between millimeter wave and infrared ray,
Low-frequency range overlaps mutually with millimeter wave, and is then intersected in high band with infrared ray.Residing for THz wave
Specific position determines that it shows a series of special natures different from other frequency range electromagnetic waves, makes
It all has great scientific value and a wide application prospect in many aspects, such as radar imagery,
Material analysis, environmental monitoring and Large Copacity communication etc..The peculiar property of THz wave mainly has following
Several respects：Transient state, it is easy to carry out various materials time-resolved research, and effectively suppresses the back of the body
The interference of scape radiated noise；Broadband property, be advantageous in a wide range of interior analysis material spectral quality；Terahertz
Hereby ripple has very strong interaction with polar molecule, available for environmental monitoring and gas analysis, detection
X ray, visible ray and infrared ray not detectable material internal defect and cache；THz wave
Photon energy it is relatively low, lossless safety detection can be carried out；With " fingerprint " characteristic, research material exists
The spectrum of Terahertz frequency range has very important significance for the structure and property for disclosing material.In view of
The characteristic of above Terahertz, determine it in physics, chemistry, information science, astronomy and biology
Deng basic research field, and all have in technical fields such as communication, safety and material process and weigh very much
The scientific value wanted and wide application prospect.
Mono- important application of THz is the terahertz time-domain spectroscopy system of free space radiation
(Terahertz-Time-Domain-Spectroscopy, THz-TDS), it is to utilize femtosecond laser
Photoconductive material or electrooptical material are excited, after the terahertz pulse launched is focused, irradiation
Onto sample, terahertz pulse is modulated by sample, and the terahertz pulse for carrying sample message gathers again
It is burnt on detector, completed by controlling the time delay of detection light and pump light to whole Terahertz
Coherent measurement of the pulse in time domain.Then Fourier transformation is carried out to the terahertz time-domain spectrum of drafting,
Finally obtain the frequency domain information of sample.It grinds semiconductor, medicine, biomolecule, spectroscopy etc.
Study carefully and play an important role.But existing free space THz-TDS systems are there is many defects,
It is required that detected sample it is too big, spectral resolution is low, and system dimension is big, and the absorption of air reclaimed water subtracts
Weak THz ripples.And existing free space THz-TDS can effectively be made up by being integrated in Terahertz antenna sheet
Deficiency.
The generation of Terahertz and receiving terminal are integrated into same substrate by integrated device in Terahertz antenna sheet
On, connected between pumping area and detecting area with metal waveguide, when the femto-second laser pulse of certain wavelength
When focusing on the low temperature GaAs photoconductivity switching of pumping area, terahertz pulse is inspired, pulse is led to
Waveguide transmission is crossed to detecting area, so as to complete the coherent detection to terahertz pulse.Sample is placed in waveguide
Above transmission line, frequency spectrum is completed by the disappearance field interactions of testing sample and waveguide transmission line
Measurement.Because its device length is well below diffraction limit, so few to sample size requirement.Due to pump
Pu does not have to not only so collimate Terahertz light path but also can be with receiving on the same chip
The size and weight of overall instrument are largely reduced, consequently facilitating realizing more small-sized portable set
It is standby.
The content of the invention
In view of this, it is an object of the present invention to propose integrated device in a kind of Terahertz antenna sheet
Shift bonding structure and its preparation technology.
To achieve the above object, according to an aspect of the present invention, there is provided collect in a kind of Terahertz antenna sheet
Into the preparation method of the transfer bonding structure of device, including step：
(1) made successively on a SI-substrate cushion, barrier layer, n-type GaAs layers and
GaAs cryospheres；
(2) the GaAs cryospheres are bonded with a polymer substrate；
(3) SI-substrate and cushion are peeled off；
(4) barrier layer is peeled off.
According to the specific embodiment of the present invention, the material of the SI-substrate and cushion is
GaAs。
According to the specific embodiment of the present invention, the material on the barrier layer is Al0.9Ga0.1As。
According to the specific embodiment of the present invention, each layer uses molecular beam epitaxy in step (1)
Make.
According to the specific embodiment of the present invention, temperature is when the GaAs cryospheres make
200-500℃。
According to the specific embodiment of the present invention, bonding is thermocompression bonding described in step (2).
According to the specific embodiment of the present invention, step (3) is specially：First by containing HNO3
Corrosive liquid is gentle to SI-substrate to be rushed layer and is quickly peeled off, and then use contains NH3Corrosive liquid pair
SI-substrate and cushion continue to peel off, and finally use and contain C3H8O7Corrosive liquid shelled at a slow speed
From.
According to the specific embodiment of the present invention, step (4) is specially：Using containing the molten of HCl
Liquid peels off the barrier layer.
According to an aspect of the present invention, there is provided the transfer bonding of integrated device in a kind of Terahertz antenna sheet
Structure, including：
Polymer substrate；
GaAs cryospheres, it is bonded in the polymer substrate；
N-type GaAs layers, it is arranged on the GaAs cryospheres.
According to an aspect of the present invention, there is provided integrated device in a kind of Terahertz antenna sheet, including the above
Described transfer bonding structure.
Pass through above-mentioned technical proposal, the beneficial effects of the present invention are：
(1) by integrated device in Terahertz antenna sheet, the application field of terahertz light spectroscopy is expanded,
And laid the foundation for the chip of terahertz time-domain spectroscopy system, have broad application prospects；
(2) by the way that the low temperature GaAs material for being used as photoconductivity switching of epitaxial growth is efficiently transferred to
In substrate, THz wave loss is reduced, utilization ratio is improved, ensures the progress of subsequent technique；
(3) realization of the invented technology technology, be advantageous to integrated device in Terahertz antenna sheet and prepare
Realization, realize that it is detected to micro-example and liquid sample.
Brief description of the drawings
Fig. 1 is the epitaxial material structure schematic diagram of a specific embodiment of the invention；
Fig. 2 is that the epitaxial material of a specific embodiment of the invention is bonded schematic diagram；
Fig. 3 is the stripping technology flow chart of a specific embodiment of the invention.
Fig. 4 is that the transfer of a specific embodiment of the invention is bonded structural representation.
Embodiment
In the present invention, the position term such as " on ", " under " only represents the phase between each layer and/or substrate
To relation, it can overturn or rotate on the whole, and above-mentioned term is not intended to limit the present invention.
According to the general plotting of invention, there is provided the transfer bonding of integrated device in a kind of Terahertz antenna sheet
The preparation method of structure, it is characterised in that including step：
(1) made successively on a SI-substrate cushion, barrier layer, n-type GaAs layers and
GaAs cryospheres；
(2) the GaAs cryospheres are bonded with a polymer substrate；
(3) SI-substrate and cushion are peeled off；
(4) barrier layer is peeled off.
For the photoconductivity switching of the photoconductivity switching structure, preferably pumping area of integrated device, when
When the femto-second laser pulse of certain wavelength is focused on the construction of switch, terahertz pulse, arteries and veins are inspired
Punching is by waveguide transmission to detecting area, to complete the coherent detection to terahertz pulse.
Concrete technology and set-up mode in step (1) is as follows：
Selection for SI-substrate, can prepare GaAs cryospheres in the prior art to commonly use
SI-substrate material, preferable material are GaAs materials.Preferable substrate thickness is 200-500
μm, it is further preferred for 300-400 μm.
For cushion, it is used to be deposited on SI-substrate, so that its surfacing, in favor of
Follow-up depositing operation, preferable material is similar or identical with SI-substrate material, more preferably
Using GaAs material.For the depositional mode of cushion, its depositing operation can be chemical vapor deposition
Product method, more preferred is deposited using molecular beam epitaxy, and the control of its depositing temperature exists
550-700℃.The deposit thickness of preferable cushion is 30-300nm, further preferred deposition of thick
Degree is between 50-200nm.
For barrier layer, its role is in subsequent technique, when peeling off SI-substrate and cushion,
Corrosion of the chemical stripping corrosive liquid to internal material is prevented, protects cryosphere and n-type GaAs layers.It is excellent
The material of choosing is AlGaAs, further preferred for Al0.9Ga0.1As.For the deposition on barrier layer
Mode, its depositing operation can be chemical gaseous phase depositing process, also preferably heavy with the cushion
Product mode is identical, and more preferred is deposited using molecular beam epitaxy, and the control of its depositing temperature exists
550-700℃.The deposit thickness on preferable barrier layer is 60nm-6 μm, further preferred deposition
Thickness is between 80nm-5 μm.
For n-type GaAs layers, it acts on the growth for being advantageous for subsequent material.For n-type GaAs
The depositional mode of layer, its depositing operation can be physical gas-phase deposite method, also preferably delay with described
Rush that the depositional mode of layer is identical, more preferred is deposited using molecular beam epitaxy, and it deposits temperature
Degree control is at 550-700 DEG C.The deposit thickness of preferable n-type GaAs layers is 0.5-5 μm, enters one
Preferable deposit thickness is walked between 1-3 μm.
For GaAs cryospheres, its depositing temperature is less than other layers of underlayer temperature, using molecular beam
Epitaxy low temperature depositing, its carrier lifetime is short, and electron-hole recombinations speed is fast, corresponding concussion electricity
The change frequency of stream is in Terahertz rank, so as to outwards give off THz wave.
Concrete technology and set-up mode in step (2) is as follows：
For polymer substrate, the preferably relatively low material of dielectric constant, to reduce to THz wave
Damage, specifically can for example select cyclic olefin polymer or polyimides, preferable substrate size is
1-2cm2, and heat resisting temperature shows cleaning, smooth, no marking, to ensure hot pressing at 60-180 DEG C
The realization of bonding.
For bonding pattern, preferably utilize intermolecular force by cryosphere thermocompression bonding in polymer
On substrate, to realize effective transmission of the THz wave on piece in waveguiding structure.
Concrete technology and set-up mode in step (3) is as follows：
First by containing HNO3Corrosive liquid is gentle to SI-substrate to be rushed layer and is quickly peeled off, then
Using containing NH3Corrosive liquid it is gentle to SI-substrate rush layer and continue to peel off, finally using containing C3H8O7
Corrosive liquid peeled off at a slow speed.
For example, quick peel off uses HNO3, H2O2, H2O (preferred proportion 1: 2: 1) corrosive liquid
The layer that rushes gentle to SI-substrate carries out fast erosion, and corrosion rate is preferably about at 20 DEG C or so
5-9μm/min.Continue to peel off and use NH3·H2O, H2O2Corrosive liquid SI-substrate is eased up
Rush layer to carry out continuing to corrode, corrosion rate is preferably in 20 DEG C or so about 4-7 μm/min.Peel off at a slow speed
Use C3H8O7·H2O, H2O2(preferable ratio 3: 1) corrosive liquid is gentle to SI-substrate 10
Rush layer 20 to be corroded at a slow speed, corrosion rate is about 30-80nm/min at 20 DEG C or so, so that half
Dielectric substrate 10, cushion 20 corrode completely.
Concrete technology and set-up mode in step (4) is as follows：
Preferable that barrier layer is corroded using the corrosive liquid containing HCl, preferable corrosion rate exists
20 DEG C or so about 80-150nm/min.
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific reality
Example is applied, and referring to the drawings, the present invention is described in further detail.It is following referring to the drawings to this hair
The explanation of bright embodiment is intended to explain the present general inventive concept of the present invention, without should be understood
To limit a kind of of the present invention.
Refer to shown in Fig. 1, the present embodiment provides integrated device in a kind of Terahertz antenna sheet first
Epitaxial material structure, including：
One SI-substrate 10, the thickness of the SI-substrate 10 is 300-400 μm；
One cushion 20, it is produced on SI-substrate 10, and the thickness of cushion 20 exists
Between 50-200nm, grow this layer and may be such that substrate surface is smooth；
One Al0.9Ga0.1As barrier layers 30, it is produced on 20, and thickness is 80nm-5 μm.This resistance
Barrier effectively stops the n-type GaAs layers 40 and cryosphere 50 that corrosion corrosion is mentioned as follows；
One n-type GaAs layers 40, it is produced on 30, thickness 100-150nm；
One cryosphere 50, it is produced on 40, and thickness is 1-3 μm, between 200-500 DEG C
Grown in temperature range, this layer material is as photoconductivity switching.The carrier lifetime of this cryosphere 50
Short, electron-hole recombinations speed is fast, the change frequency of corresponding concussion electric current in Terahertz rank, from
And it can outwards give off THz wave.
Above-described SI-substrate 10, cushion 20, the material of cryosphere 50 are GaAs.
Except cryosphere 50, remaining layer growth temperature is 550-700 DEG C.Wherein, Al0.9Ga0.1As barrier layers
30th, n-type GaAs layers 40, cryosphere 50, collectively constitute epitaxial material 60.Grow this epitaxial material
60 method is molecular beam epitaxy (molecular beam epitaxy, MBE) method.
Refer to shown in Fig. 2, the present embodiment then provides integrated device in a kind of Terahertz antenna sheet
Epitaxial material is bonded, and it is thermocompression bonding to be bonded method used, including：
One polymer substrate 70, the backing material be cyclic olefin polymer (Cyclo-olefin polymer,
COP), the relatively low material of the dielectric constant such as polyimides, size 1-2cm2, to reduce to Terahertz
Ripple is lost.And heat resisting temperature shows cleaning, smooth, no marking, to ensure hot pressing at 60-180 DEG C
The realization of bonding；
One epitaxial material 60, size 6-8mm2.Will under conditions of 50-200kPa, 50-200 DEG C
SI-substrate 10 in this epitaxial material 60 is face-up.Cryosphere 50 and polymer substrate 70 are tight
Contiguity is touched, and using intermolecular force thermocompression bonding in polymer substrate 70, to realize terahertz
Hereby effective transmission of the ripple on piece in waveguiding structure.
Refer to shown in Fig. 3, the present embodiment provides a kind of extension of integrated device in Terahertz antenna sheet
Material stripping technology.After the structure that epitaxial material 60 is well bonded with polymer substrate 70 is obtained,
Stripping technology is carried out, to realize the transfer of epitaxial material 60.This technique in four steps, uses
HNO3-NH3·H2O-C3H8O7·H2O-H2O2- HCl corrosion systems, including：
The first step, use HNO3∶H2O2∶H2O=1: 2: 1 corrosive liquid is gentle to SI-substrate 10
Rush layer 20 and carry out fast erosion, corrosion rate is in 20 DEG C or so about 5-9 μm/min.This corrosive liquid
To SI-substrate 10, cushion 20 and Al0.9Ga0.1The corrosion on As barrier layers 30 is almost without selection
Property.
Second step, use NH3·H2O∶H2O2Corrosive liquid to SI-substrate 10 and cushion 20
Carry out continuing to corrode, corrosion rate is in 20 DEG C or so about 4-7 μm/min.This corrosive liquid is to semi-insulating
Substrate 10, cushion 20 and Al0.9Ga0.1The etch selectivities on As barrier layers 30 are poor.
3rd step, uses C3H8O7·H2O∶H2O2=3: 1 corrosive liquid is gentle to SI-substrate 10
Rush layer 20 to be corroded at a slow speed, corrosion rate is about 30-80nm/min at 20 DEG C or so, so that half is exhausted
Edge substrate 10, cushion 20 corrode completely.Wherein, C3H8O7·H2O is by C3H8O7·H2O is brilliant
Body and H2O equivalent, which fully dissolves, to be formulated.This corrosive liquid is to SI-substrate 10, cushion 20
And Al0.9Ga0.1The corrosion selection ratio about 60-80 on As barrier layers 30.Can effectively it erode semi-insulating
Substrate 10, cushion 20, leave Al0.9Ga0.1As barrier layers 30.
4th step, uses HCI: H2O=2: 1 corrosive liquid is to Al0.9Ga0.1As barrier layers 30 carry out corruption
Erosion, corrosion rate is in 20 DEG C or so about 80-150nm/min.This corrosive liquid is to Al0.9Ga0.1As hinders
Barrier 30 and preferable to the selectivity of n-type GaAs layers 40, cryosphere 50, can effectively by
Al0.9Ga0.1As barrier layers 30 are corroded completely, retain n-type GaAs layers 40, cryosphere 50.
The step of the above four corrosion need under 20 DEG C or so isoperibols homogeneous corrosion.Four steps corrosion more than completing,
The epitaxial material stripping technology integrated in Terahertz antenna sheet is completed, can obtain n-type GaAs layers
40th, cryosphere 50 is bonded in smooth, the clean structure in the upper surface of polymer substrate 70 (referring to Fig. 4
It is shown), to carry out subsequent technique.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out
It is further described, it should be understood that the specific embodiment of the present invention is the foregoing is only,
It is not intended to limit the invention, within the spirit and principles of the invention, any modification for being made,
Equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
1. the preparation method of the transfer bonding structure of integrated device in a kind of Terahertz antenna sheet, it is special
Sign is to include step：
(1) made successively on a SI-substrate cushion, barrier layer, n-type GaAs layers and
GaAs cryospheres；
(2) the GaAs cryospheres are bonded with a polymer substrate；
(3) SI-substrate and cushion are peeled off；
(4) barrier layer is peeled off.
2. preparation method according to claim 1, it is characterised in that the SI-substrate
Material with cushion is GaAs.
3. preparation method according to claim 1, it is characterised in that the material on the barrier layer
Expect for Al0.9Ga0.1As。
4. preparation method according to claim 1, it is characterised in that each layer in step (1)
Made using molecular beam epitaxy.
5. preparation method according to claim 4, it is characterised in that the GaAs cryospheres
Temperature is 200-500 DEG C during making.
6. preparation method according to claim 1, it is characterised in that described in step (2)
It is bonded as thermocompression bonding.
7. preparation method according to claim 1, it is characterised in that step (3) is specially：
First by containing HNO3Corrosive liquid is gentle to SI-substrate to be rushed layer and is quickly peeled off, and is then used
Containing NH3Corrosive liquid it is gentle to SI-substrate rush layer and continue to peel off, finally using containing C3H8O7's
Corrosive liquid is peeled off at a slow speed.
8. preparation method according to claim 1, it is characterised in that step (4) is specially：
The barrier layer is peeled off using the solution containing HCl.
A kind of 9. transfer bonding structure of integrated device in Terahertz antenna sheet, it is characterised in that including：
Polymer substrate；
GaAs cryospheres, it is bonded in the polymer substrate；
N-type GaAs layers, it is arranged on the GaAs cryospheres.
10. integrated device in a kind of Terahertz antenna sheet, it is characterised in that including described in claim 9
Transfer bonding structure.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0922998A (en) * | 1995-07-04 | 1997-01-21 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US6541803B1 (en) * | 2000-04-21 | 2003-04-01 | The United States Of America As Represented By The Secretary Of The Army | High-speed high electron mobility transistor photodetector using low temperature gallium arsenide |
| CN101661942A (en) * | 2008-08-25 | 2010-03-03 | 佳能株式会社 | Terahertz wave generating device and apparatus using the same |
| JP2010210543A (en) * | 2009-03-12 | 2010-09-24 | Seiko Epson Corp | Sensor unit, terahertz spectral measurement apparatus, and terahertz spectral measurement method |
| CN102110594A (en) * | 2010-12-20 | 2011-06-29 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on GaAs and Si |
| CN102110595A (en) * | 2010-12-20 | 2011-06-29 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on InGaAs and GaAs |
| US20110188525A1 (en) * | 2008-06-13 | 2011-08-04 | Julien Claudon | Terahertz wave emission laser device |
| CN102570307A (en) * | 2012-02-02 | 2012-07-11 | 中国科学院上海微***与信息技术研究所 | Single-mode large-power THz quantum cascade laser (QCL) and manufacturing technology thereof |
| CN102810814A (en) * | 2012-08-02 | 2012-12-05 | 中国航天科工集团第二研究院二〇三所 | Waveguide technique for multiplex terahertz pulses |
| CN103219291A (en) * | 2013-05-02 | 2013-07-24 | 中国科学院半导体研究所 | Method for preparing cavity type memory based on quantum dots |
| CN103278893A (en) * | 2013-05-30 | 2013-09-04 | 中国科学院西安光学精密机械研究所 | Terahertz wave emitting/receiving integration module |
| CN103633559A (en) * | 2013-12-05 | 2014-03-12 | 中国科学院半导体研究所 | High-power low-divergence-angle semiconductor terahertz vertical plane emitting laser |
| CN104247054A (en) * | 2011-11-04 | 2014-12-24 | 普林斯顿大学 | Light emitting diodes, fast photo-electron source and photodetectors with scaled nanostructures and nanoscale metallic photonic cavity and antenna, and method of making same |
-
2016
- 2016-05-09 CN CN201610302700.5A patent/CN107359135A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0922998A (en) * | 1995-07-04 | 1997-01-21 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US6541803B1 (en) * | 2000-04-21 | 2003-04-01 | The United States Of America As Represented By The Secretary Of The Army | High-speed high electron mobility transistor photodetector using low temperature gallium arsenide |
| US20110188525A1 (en) * | 2008-06-13 | 2011-08-04 | Julien Claudon | Terahertz wave emission laser device |
| CN101661942A (en) * | 2008-08-25 | 2010-03-03 | 佳能株式会社 | Terahertz wave generating device and apparatus using the same |
| JP2010210543A (en) * | 2009-03-12 | 2010-09-24 | Seiko Epson Corp | Sensor unit, terahertz spectral measurement apparatus, and terahertz spectral measurement method |
| CN102110595A (en) * | 2010-12-20 | 2011-06-29 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on InGaAs and GaAs |
| CN102110594A (en) * | 2010-12-20 | 2011-06-29 | 中国科学院半导体研究所 | Method for performing low-temperature metal bonding on GaAs and Si |
| CN104247054A (en) * | 2011-11-04 | 2014-12-24 | 普林斯顿大学 | Light emitting diodes, fast photo-electron source and photodetectors with scaled nanostructures and nanoscale metallic photonic cavity and antenna, and method of making same |
| CN102570307A (en) * | 2012-02-02 | 2012-07-11 | 中国科学院上海微***与信息技术研究所 | Single-mode large-power THz quantum cascade laser (QCL) and manufacturing technology thereof |
| CN102810814A (en) * | 2012-08-02 | 2012-12-05 | 中国航天科工集团第二研究院二〇三所 | Waveguide technique for multiplex terahertz pulses |
| CN103219291A (en) * | 2013-05-02 | 2013-07-24 | 中国科学院半导体研究所 | Method for preparing cavity type memory based on quantum dots |
| CN103278893A (en) * | 2013-05-30 | 2013-09-04 | 中国科学院西安光学精密机械研究所 | Terahertz wave emitting/receiving integration module |
| CN103633559A (en) * | 2013-12-05 | 2014-03-12 | 中国科学院半导体研究所 | High-power low-divergence-angle semiconductor terahertz vertical plane emitting laser |
Non-Patent Citations (7)
| Title |
|---|
| DAVID C. HAYS: "SELECTIVE ETCHING OF COMPOUND SEMICONDUCTORS", 《A THESIS PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE》 * |
| L. DESPLANQUE ET AL: "Generation and detection of terahertz pulses using post-process bonding of low-temperature-grow GaAs and AlGaAs", 《APPLIED PHYSICS LETTERS》 * |
| STEVEN M. MARAZITA ET AL: "Integrated GaAs Schottky Mixers by Spin-on-Dielectric Wafer Bonding", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
| 仝召民等: "基于 GaAs AlAs腐蚀自停止的新型水听器工艺", 《纳米技术与精密工程》 * |
| 左剑，张亮亮，巩辰，张存林: "太赫兹片上***和基于微纳结构的太赫兹超宽谱源的研究进展", 《物理学报》 * |
| 张煦: "《光纤通信技术词典》", 28 February 1990 * |
| 李乃平: "《微电子器件工艺》", 31 August 1995 * |
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