CN106711271B - Surpass three frequency band near infrared absorption devices of surface texture based on semiconductor - Google Patents
Surpass three frequency band near infrared absorption devices of surface texture based on semiconductor Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Microelectronics & Electronic Packaging (AREA)
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
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Abstract
The invention discloses the three frequency band near infrared absorption devices for surpassing surface texture based on semiconductor, belong to Meta Materials field.The absorber is successively made of substrate, metallic diaphragm and the super surface texture layer of semiconductor from bottom to top, and the super surface texture layer is made of semiconductor grain array and semiconductor film.The present invention can fully absorb the electromagnetic wave for being incident on body structure surface by the geometric dimension and lattice period of the rational design super surface texture of semiconductor.This absorber for surpassing surface based on semiconductor has that structure is simple, near infrared band absorbs, and the characteristics of there are three absorption peak, the semiconductor material used in this external structure, which as electromagnetic wave absorption function layer not only overcomes conventional metals resonating member single size and can only generate the limitation of single resonance absorbing peak but also be also convenient for expanding such absorber, generates the application prospect with fields such as collection and electromagnetic energy absorptions in Photoelectric Detection, photoelectric conversion, light induced electron and thermoelectron.
Description
Technical field
The present invention relates to the fields such as Meta Materials, nanophotonics and photoelectric material, and in particular to a kind of super based on semiconductor
Three frequency band near infrared absorption devices of surface texture.
Background technique
In electromagnetic spectrum, infrared band is usually divided into near-infrared (0.76μm~2.5 μM), infrared in by (2.5μm
~25 μAnd far infrared (25 m)μm~1000 μM) three frequency ranges.Hydric group near infrared spectrum and organic molecule (O-H,
N-H, C-H) vibration sum of fundamental frequencies it is consistent with the uptake zone of frequencys multiplication at different levels, pass through scanning sample near infrared spectrum, available sample
The characteristic information of organic molecule hydric group in product, and using near-infrared spectrum technique analysis sample have easily and fast, it is high
The advantages that effect, accurate and cost is relatively low, does not destroy sample, does not consume chemical reagent, free from environmental pollution.In addition, near-infrared frequency range
Also there is boundless application in the fields such as photodetection and light-sensitive device.The principle of photodetector be caused by radiation by
Irradiation material electric conductivity changes.Photodetector has extensive use in military and national economy every field.Currently, red
Outer photodetector series just includes Ge detector, InGaAs detector, InAs detector, PbS detector, PbSe detection
Numerous photodetectors such as device, InSb detector, HgCdTe detector.Therefore, near-infrared frequency range is carried out in conjunction with semiconductor material
Light absorption research have very important realistic meaning.
Electromagnetism Meta Materials (Metamaterial) refer to some with extraordinary physical property not available for natural material
Artificial composite material, structure of the material on key physical scale design for oldered array." Meta Materials " packet developed so far
It includes: " left-handed material " and " super magnetic material " etc..
The super surface of electromagnetism (Metasurface) is the latest development direction of nearly one or two years artificial electromagnetic Meta Materials research and grinds
Study carefully one of hot spot, it be a kind of ultra-thin two-dimension array plane constructed by metamaterial structure unit, it can be achieved that electromagnetic wave phase,
The flexible and Effective Regulation of the characteristics such as polarization mode, communication mode.Negative refraction, polarization rotation, convergence imaging can be achieved and propagate
The novel physics effects such as wave direction surface wave conversion.Enrich unique physical characteristic and the flexible modulation ability to electromagnetic wave in super surface
Make it that there is important answer in numerous areas such as stealth technology, antenna technology, infrared detector part, optoelectronic function devices
Use prospect.
Meta Materials electromagnetic wave absorber was proposed and in 2008 micro- by the Landy seminar of boston, U.S.A institute at first
Wave frequency section is verified (volume 100, page 207402 (2008) of " Physical Review Letters ").It is double by utilizing
The medium substrate that bread is covered with metal constitutes face type double-layer structure, and upper layer is split ring resonator (Split-Ring
Resonators), bottom is notch metal wire (Cut-Wire), and the two constitutes resonance ring structure, so that being incident on the absorber
Electromagnetic wave in structure is formed wherein to resonate and absorbs consumption, to achieve the purpose that perfect absorption, near 11.5GHz
Realize nearly 88% absorption efficiency.But such structure can only absorb the electromagnetic wave of single polarization, and intermediate medium insulating film layer
For dielectric materials.Hereafter, researchers at home and abroad propose more metal-dielectric-metal stratiform resonance metamaterial structures,
Realize the performances such as unrelated, the more absorption peaks of polarization and broadband.But these researchs are concentrated mainly on microwave, Terahertz and visible
Optical band, and work is rarely reported in the absorber of near-infrared frequency range.Near-infrared frequency range absorber can be used as photodetector/
The absorptive unit of transmitter, or reduce as coating material the spurious emissions of electromagnetic wave, however it is nearly all existing close red
Only one absorption band of outer absorber.However in selective infrared filter, multi-way detecting array and biochemistry
In the application such as molecule and ion detection technology, it is desirable that the characteristic that there is absorber multiband to absorb.Currently, meta-material absorber is past
The Asia that different sizes are constructed toward the various sizes of array of structures using two kinds or more or in a resonating member is single
Meta structure system, each size array or dimension cells have respective resonant frequency, and different resonant frequencies are superimposed on frequency spectrum
It can realize that two-band or multiband absorb.But this absorber structure design complexity, repeatability are poor.This makes at present
Application of most of near infrared absorption device in terms of infrared detector part, optoelectronic function is restricted, therefore
The near infrared absorption device that we are badly in need of a kind of multiband based on the simply such as single resonance system of structure, absorb by force.In addition, several
Existing all electromagnetic wave absorbers include that semiconductor material is all free of in the absorber metamaterial structure of near-infrared frequency range, than
Such as, the medium in the different absorbers for absorbing frequency range, metamaterial structure or insulating film layer are all common silica, oxygen
The low dielectric media of change aluminium and magnesium fluoride etc. (" Advanced Materials ", volume 24, the OP98 pages；"Laser
Photonics Reviews ", volume 8, page 495).And semiconductor material and the absorber ability based on semiconductor material
Light induced electron and other photoelectric respones can really be effectively realized, it may be said that the absorber based on semiconductor material is to realize electricity
Electro-magnetic wave absorption device is in photoelectric functional device and the integrated necessary condition for waiting fields application.Therefore, we are badly in need of a kind of based on partly leading
The near infrared absorption device of body material.
In the recent period, the optics similar to metal Meta Materials resonance characteristics can be formed using semiconductor grain building resonating member
Behavior (" Science ", volume 354, the aag2472 pages).For example, by constructing two using the micro-nano-scale spherical structure of silicon
The super surface (" Nature Communication ", volume 3, page 664) of array is tieed up, the such system of experimental verification is very strong
Electrically and magnetically resonance response.However, how to break through fault of construction of the existing electromagnetic wave absorber in terms of semiconductor material missing and
Absorber of the building based on semiconductor material electromagentic resonance characteristic is the Science and Technology bottle that current domestic and international researcher is faced
Neck.
Summary of the invention
For the deficiency of above-mentioned meta-material absorber, the purpose of the invention is to provide a kind of work in near-infrared frequency range
The three frequency band absorbers for surpassing surface texture based on semiconductor, it is intended to introduce semiconductor material, utilize semi-conductor electricity magnetic resonance special
Property, simplify absorptive unit structure and increases absorption peak number.
The purpose of the present invention is what is be achieved through the following technical solutions:
Surpass three frequency band near infrared absorption devices of surface texture based on semiconductor, it includes substrate, metallic diaphragm, semiconductor film
Layer, semiconductor grain, it is characterised in that: set gradually substrate, metallic diaphragm, semiconductor film and semiconductor from bottom to top
Grain, the semiconductor film and semiconductor grain form the super surface texture layer of semiconductor；The wherein semiconductor film lower surface
Connection interlaced area with metallic diaphragm is direct physical contact, and the connection of several semiconductor grains and semiconductor film is handed over
Wrong region is direct physical contact, and the super surface texture layer of the metallic diaphragm, semiconductor is cooperatively formed with three frequency band near-infrareds
The structure of absorption characteristic, by adjusting the geometric parameter of the super surface texture of semiconductor and period and the semiconductor material of elementary cell
Expect attribute, regulate and control near-infrared frequency range absorption spectrum range, increases absorption peak number.
The cyclic array pattern of the semiconductor grain composition is arranged in semiconductor film upper surface.
The material of the super surface texture layer of semiconductor is monocrystalline silicon, polysilicon, nanocrystal silicon, GaAs, indium phosphide, two
Titanium oxide, indium arsenide or germanium etc..
The material of the metallic diaphragm is the metal materials such as silver, aluminium, copper or gold.
The structure of the semiconductor grain is the structures such as cube shaped and cuboid.
The semiconductor film thickness is in 10-100 nm range.
The material of the substrate is the materials such as glass, silicon wafer, flexible material such as dimethyl silicone polymer and polymer.
The period of the absorber unit lattice is 0.5 ~ 2.5μm。
The pattern form size of the semiconductor grain is identical, and the size of semiconductor grain includes that length and width high scope is
0.35~2.2 μm。
The absorber structure can include ion sputtering process and magnetron sputtering method and lithographic technique by physical deposition methods
Including laser etching techniques etc..
Three frequency band near infrared absorption devices of the invention have the advantages that
1, the super surface texture of semiconductor constituted by using semiconductor grain array and semiconductor film is as close red
The absorbed layer of outer light is effectively prevented being constructed based on metallic particles in the metal that meta-material absorber can not overcome and be damaged in ohm
The bad interference of the fuel factors such as consumption and the concussion of free electron collective.
2, by using semiconductor grain construction schedule array structure, it is based on this height of structure symmetry, is greatly dropped
The sensibility of the low incident polarization angle to incidence wave, so that the three band electromagnetic wave perfections for realizing random polarization angle are inhaled
It receives.
3, it by the way that different resonance modes can be provided using semiconductor grain itself, is generated altogether to realize in different frequency range
Vibration absorbs, and generates multiband and absorbs.
4, relative to existing meta-material absorber, absorption peak point of the invention occurs in near-infrared frequency range；
5, structure is simple, and easily prepared and realization is integrated；
6, the semiconductor grain resonating member based on single size generates three narrow band spectrum absorption characteristics, in infrared spy
The fields such as survey, infrared imaging and heat radiator are with a wide range of applications；
7, the super surface texture of semiconductor constituted by using semiconductor grain array and semiconductor film is as close red
The absorbed layer of outer light, be conducive to using in semiconductor material photoelectric characteristic carry out near infrared light electro-detection and light induced electron etc.
The application of aspect.
8, all there is perfect assimilation effect for the electromagnetic infrared wave of different polarization characteristic, is easy to be well adapted for complexity
Electromagnetic environment.
Detailed description of the invention
It is explained further with reference to the accompanying drawing and the content that the present invention will be described in detail.But the following drawings is only the present invention
Idealized embodiments schematic diagram, wherein the structure in order to clearly show device involved in the present invention, to wherein selected
The thickness of the super surface texture layer region of semiconductor has carried out appropriate amplification, but it should not be considered as strictly reflecting as schematic diagram
The proportionate relationship of geometric dimension.In addition, embodiment shown in the present invention also should not be considered limited to area shown in figure
The specific shape in domain.In general, following attached drawing is schematical, be should not be considered as limiting the scope of the invention.
Fig. 1 is the three frequency band near infrared absorption devices for surpassing surface texture in an optional embodiment of the invention based on semiconductor
Structural schematic diagram；
Fig. 2 is the three frequency band near infrared absorption devices for surpassing surface texture in an optional embodiment of the invention based on semiconductor
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, metallic diaphragm with a thickness of 100nm, semiconductor film with a thickness of
30nm.Semiconductor grain is silicon pros body structure, side length 450nm, high 20nm.Silicon pros volume array is triangle arrangement, week
Phase size is 800nm.
Fig. 3 is the three frequency band near infrared absorption devices for surpassing surface texture in an optional embodiment of the invention based on semiconductor
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, metallic diaphragm with a thickness of 100nm, semiconductor film with a thickness of
40nm.Semiconductor grain is silicon pros body structure, side length 450nm, high 20nm.Silicon pros volume array is triangle arrangement, week
Phase size is 800nm.
Fig. 4 is the three frequency band near infrared absorption devices for surpassing surface texture in an optional embodiment of the invention based on semiconductor
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, metallic diaphragm with a thickness of 100nm, semiconductor film with a thickness of
30nm.Semiconductor grain is silicon pros body structure, side length 400nm, high 20nm.Silicon pros volume array is triangle arrangement, week
Phase size is 750nm.
Fig. 5 is the three frequency band near infrared absorption devices for surpassing surface texture in an optional embodiment of the invention based on semiconductor
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, metallic diaphragm with a thickness of 100nm, semiconductor film with a thickness of
30nm.Semiconductor grain is silicon pros body structure, side length 500nm, high 20nm.Silicon pros volume array is triangle arrangement, week
Phase size is 850nm.
Fig. 6 is that the three frequency band near infrared absorption devices for surpassing surface texture based on semiconductor in an optional embodiment of the invention exist
Light absorption figure under different incident light polarization angles.Single crystal of semiconductor material silicon, metal material be silver, metallic diaphragm with a thickness of
100nm, semiconductor film is with a thickness of 30nm.Semiconductor grain is silicon pros body structure, side length 450nm, high 20nm.Silicon is just
Cube array is triangle arrangement, and period size is 800nm.
Fig. 7 is the three frequency band near infrared absorption devices for surpassing surface texture in an optional embodiment of the invention based on semiconductor
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, metallic diaphragm with a thickness of 100nm, semiconductor film with a thickness of
30nm.Semiconductor grain is silicon pros body structure, side length 450nm, high 20nm.Silicon pros volume array is triangle arrangement, week
Phase size is 800nm.Super surface covering layer of transparent electrode material (tin indium oxide (being commonly called as ITO)) of semiconductor, the covering of ito film layer
On super surface texture, with a thickness of 50nm.
Marked in the figure: 1, substrate, 2, metallic diaphragm, 3, semiconductor film, 4, semiconductor grain.
Specific embodiment
Technical solution of the present invention is described further below with reference to embodiment, however, it is not limited to this, all to this
Inventive technique scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered
Within the protection scope of the present invention.
Material of the electromagnetic wave absorptivity close to 100% is difficult to find that in nature, so using super surface in conjunction with semiconductor
The electromagentic resonance characteristic of material realizes that perfect electro-magnetic wave absorption is particularly important.By the geometry knot for designing super surface absorber
Structure parameter and the suitable semiconductor material of selection, can make super surface absorber generate strong electromagentic resonance mode, make it and enter
Radio magnetic wave generates very strong coupling, and then realizes reflectivityRIt is 0；Simultaneously because the metallic diaphragm of absorber bottom is not
Light transmission, so the transmissivity of super surface absorberTIt also is 0.According to absorptivity calculation formulaA=1-R-T, available absorptivity
Reach 100%, realizes perfect absorb.
The present invention is intended to provide a kind of three frequency band near infrared absorption devices for surpassing surface texture based on semiconductor, from bottom to top according to
Secondary setting substrate 1, metallic diaphragm 2, semiconductor film 3 and semiconductor grain 4, the semiconductor film 3 and 4 groups of semiconductor grain
Surpass surface texture layer at semiconductor；Wherein 3 lower surface of semiconductor film and the connection interlaced area of metallic diaphragm 2 are direct
The connection interlaced area of physical contact, several semiconductor grains 4 and semiconductor film 3 is direct physical contact, the gold
Category film layer 2, the super surface texture layer of semiconductor cooperatively form the structure with three frequency band near infrared absorption characteristics, are partly led by adjusting
The geometric parameter of the super surface texture of body and period and the semiconductor material properties of elementary cell, regulation near-infrared frequency range absorb frequency
Spectral limit increases absorption peak number.
Aforesaid substrate 1 can be selected but be not limited to the hard such as silicon wafer, glass, plastics, stainless steel or flexible substrate, be used to support
Light perfection absorber based on the super surface texture of metallic diaphragm-semiconductor.
Aforementioned metal film layer 2 can use one layer of continuous metallic film, material can be selected but be not limited to gold, silver, copper,
Aluminium, platinum etc., thickness is preferably in 50nm or more, especially 50nm-200nm.
Aforesaid semiconductor film layer 3 be preferably high refractive index dielectric material film, for example, can be selected but be not limited to monocrystalline silicon,
Polysilicon, nanocrystal silicon, GaAs, indium phosphide, titanium dioxide, indium arsenide or germanium etc..
As one of preferred embodiment, at least aforesaid semiconductor particle 4 is arranged by cube shaped semiconductor resonating member
And constitute periodic micro nano structure.
The super superficial layer of aforesaid semiconductor and metallic diaphragm constitute the structure absorbed with three frequency band light perfections together.Further
, by regulating and controlling the refractive index and geometric parameter on the super surface of aforesaid semiconductor, the composite junction of metallic diaphragm and the super surface of semiconductor
The lattice period of structure, array can be worked with optimization design in the complete light absorber structure of different frequency range.For example, as preferable
One of application scheme, the size that can optimize the semiconductor grain in absorber structure by Numerical Aanlysis Methods of Electromagnetic Field is big
Small and array cycle parameter, so that optical resonance spectrum and incoming electromagnetic wave spectrum that semiconductor grain array generates are in frequency
It is overlapped on domain, to obtain strong resonance coupling, inhibits reflection loss, obtained nearly 100% light perfection and absorb.
Technical solution of the present invention is described in detail below with reference to several preferred embodiments and relevant drawings:
Embodiment 1: being the three frequency band near infrared absorption devices that the present embodiment surpasses surface texture based on semiconductor shown in refering to fig. 1
Schematic diagram comprising set gradually be made of substrate 1, metallic diaphragm 2, the super surface texture layer of semiconductor from bottom to top, metal
Material is silver, and single crystal of semiconductor material silicon, metallic diaphragm 2 and 3 thickness of semiconductor film are respectively 100nm and 30nm.Semiconductor
Particle 4 is silicon pros body structure, side length 450nm, high 20nm.Silicon pros volume array is triangle arrangement, and period size is
800nm.As shown in fig.2, the absorber absorptivity presents 3 light with wavelength change near infrared band as the result is shown
Absorption peak, maximum light absorption rate is up to 99% in 3 optical absorption peaks and minimum absorptivity has also exceeded 98%.
Embodiment 2: refering to the three frequency band near infrared absorption devices for shown in Fig. 3 being the present embodiment based on semiconductor and surpassing surface texture
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, and metallic diaphragm 2 is with a thickness of 100nm, 3 thickness of semiconductor film
For 40nm.Semiconductor grain 4 is silicon pros body structure, side length 450nm, high 20nm.Silicon pros volume array is triangle arrangement,
Period size is 800nm.It can be concluded that, although the semiconductor film thickness in absorber increases, 3 frequency band light are complete from figure
Beauty, which absorbs, to be still maintained, and maximum light absorption rate has reached 99%.
Embodiment 3: refering to the three frequency band near infrared absorption devices for shown in Fig. 4 being the present embodiment based on semiconductor and surpassing surface texture
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, and metallic diaphragm 2 is with a thickness of 100nm, 3 thickness of semiconductor film
For 30nm.Semiconductor grain 4 is silicon pros body structure, side length 400nm, high 20nm.Silicon pros volume array is triangle arrangement,
Period size is 750nm.From scheming it can be found that by the semiconductor grain size and lattice period in regulation absorber,
For example small semiconductor square and small array period are used, 3 frequency band light perfections absorption has still appeared in spectrally,
Maximum light absorption rate has also reached 99%.
Embodiment 4: refering to the three frequency band near infrared absorption devices for shown in Fig. 5 being the present embodiment based on semiconductor and surpassing surface texture
Light absorption figure.Single crystal of semiconductor material silicon, metal material are silver, and metallic diaphragm 2 is with a thickness of 100nm, 3 thickness degree of semiconductor film
For 30nm.Semiconductor grain 4 is silicon pros body structure, side length 500nm, high 20nm.Silicon pros volume array is triangle arrangement,
Period size is 850nm.From scheming it can be found that by increasing semiconductor grain size and lattice period in absorber,
3 frequency band light perfections absorption has still appeared in spectrally, and maximum light absorption rate has approached 100%.In addition, before compared to regulation
Structural parameters, such as embodiment 1, third long-wave band absorption peak by original spectrum position 992nm red shift to 1015nm, simultaneously
Spectral absorption is then remained at more than 99%.
Embodiment 5: refering to the three frequency band near infrared absorption devices for shown in Fig. 6 being the present embodiment based on semiconductor and surpassing surface texture
Light absorption figure under different incident light polarization angles.Single crystal of semiconductor material silicon, metal material are silver, 2 thickness of metallic diaphragm
For 100nm, semiconductor film 3 is with a thickness of 30nm.Semiconductor grain 4 is silicon pros body structure, side length 450nm, high 20nm.
Silicon pros volume array is triangle arrangement, and period size is 800nm.It is upper it can be found that absorber is in different incident light polarizations from figure
Original 3 frequency band light perfection absorption characteristic is maintained under angle, shows that the absorber is insensitive to polarization angle, is adapted to multiple
Strays magnetic biasing is shaken in environment.
Embodiment 6: refering to the three frequency band near infrared absorption devices for shown in Fig. 7 being the present embodiment based on semiconductor and surpassing surface texture
The absorption figure of light.Single crystal of semiconductor material silicon, metal material are silver, and metallic diaphragm 2 is with a thickness of 100nm, 3 thickness of semiconductor film
For 30nm.Semiconductor grain 4 is silicon pros body structure, side length 450nm, high 20nm.Silicon pros volume array is triangle arrangement,
Period size is 800nm.It is that (tin indium oxide (is commonly called as 50nm transparent electrode material that the super surface of semiconductor, which covers a layer thickness,
ITO)).Absorption spectrum shows that the absorber can still keep 3 frequency band light absorptions, 3 light absorptions in one layer of conductive film layer of covering
Maximum light absorption rate is up to 99% in peak and minimum absorptivity has also exceeded 96%, show the absorber be easy to and transparent electrode material into
It row connection and integrates and keeps light perfection sink effect, consequently facilitating expanding such absorber in photoelectric functional material and device
Using, such as including constructing infrared photoelectric detector and electro-optical modulation unit etc..
Claims (9)
1. a kind of three frequency band near infrared absorption devices for surpassing surface texture based on semiconductor, including substrate, metallic diaphragm, semiconductor film
Layer, semiconductor grain, it is characterised in that: set gradually substrate, metallic diaphragm, semiconductor film and semiconductor from bottom to top
Grain, the semiconductor film and semiconductor grain form the super surface texture layer of semiconductor；The wherein semiconductor film lower surface
Connection interlaced area with metallic diaphragm is direct physical contact, the connection ecotone of the semiconductor grain and semiconductor film
Domain is direct physical contact, and the super surface texture layer of the metallic diaphragm, semiconductor is cooperatively formed with three frequency band near infrared absorptions
The structure of characteristic, by adjusting the geometric parameter of the super surface texture of semiconductor and period and the semiconductor material category of elementary cell
Property, regulate and control near-infrared frequency range absorption spectrum range, increases absorption peak number；The cyclic array figure of the semiconductor grain composition
Case is arranged in semiconductor film upper surface.
2. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The material of the super surface texture layer of semiconductor be monocrystalline silicon, polysilicon, nanocrystal silicon, GaAs, indium phosphide, titanium dioxide,
Indium arsenide or germanium.
3. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The material of the metallic diaphragm is silver, aluminium, copper or golden metal material.
4. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The structure of the semiconductor grain is cube shaped and cuboid structure.
5. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The semiconductor film thickness is in 10-100nm range.
6. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The material of the substrate is any one of glass, silicon wafer, dimethyl silicone polymer and polymer material.
7. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The period of the absorber unit lattice is 0.5~2.5 μm.
8. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
The pattern form size of the semiconductor grain is identical, the size of semiconductor grain include length and width high scope be 0.35~
2.2μm。
9. the three frequency band near infrared absorption devices according to claim 1 for surpassing surface texture based on semiconductor, it is characterised in that:
Its thickness of the metallic diaphragm is 50nm-200nm.
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