CN107359112B - Manufacturing method of P-type double-sided crystalline silicon battery - Google Patents
Manufacturing method of P-type double-sided crystalline silicon battery Download PDFInfo
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- CN107359112B CN107359112B CN201710649732.7A CN201710649732A CN107359112B CN 107359112 B CN107359112 B CN 107359112B CN 201710649732 A CN201710649732 A CN 201710649732A CN 107359112 B CN107359112 B CN 107359112B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000002002 slurry Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 239000007787 solid Substances 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000007888 film coating Substances 0.000 abstract description 2
- 238000009501 film coating Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a P-type double-sided crystalline silicon battery, which comprises the steps of firstly carrying out double-sided texturing on a silicon wafer by utilizing a traditional texturing process, then adopting a slurry printing process and a chain type horizontal diffusion process which take a solid impurity source as a main component, then carrying out double-sided film coating, double-sided printing of a front silver electrode and sintering. Compared with the conventional double-sided battery, the double-sided battery preparation process adopting the method of the invention is simpler, especially the double-sided printing process and the chained diffusion process, ensures that different diffusion sources at the edges are not doped with each other, and simultaneously reduces the leakage rate of the finished battery; compared with the traditional tubular diffusion process, the diffusion time of the chained diffusion process is greatly shortened, and the production efficiency is improved.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a manufacturing method of a P-type double-sided crystalline silicon cell.
Background
In order to improve the battery conversion efficiency, new double-sided batteries have been produced in recent years. The conventional preparation of the P-type double-sided battery has a complicated double-sided diffusion process, the surface of the first diffusion needs to be protected from contamination while the second diffusion is carried out on the double sides, and more operation processes are needed to obtain the expected effect. Due to the limitation of the process, the crystalline silicon double-sided solar cell cannot be applied to production in a large quantity.
The chinese patent application No. 201310466393.0 discloses a method for manufacturing a P-type double-sided solar cell, but the diffusion process in the technical scheme in the patent application adopts a liquid diffusion source and a tubular diffusion, and the production efficiency is low.
Disclosure of Invention
The invention aims to provide a manufacturing method of a P-type double-sided crystalline silicon battery, which aims to solve the problems in the prior art, so that the manufacturing process of the P-type double-sided crystalline silicon battery is simple and is suitable for large-scale production and use.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides a manufacturing method of a P-type double-sided crystalline silicon battery, which is characterized by comprising the following steps of: the method comprises the following steps:
A. alkali texturing is carried out on the two sides of the silicon wafer;
B. printing boron slurry containing solid impurity boron oxide on the back of the textured silicon wafer, wherein the boron slurry is 0.5-1mm away from the edge of the silicon wafer, and the thickness of the boron slurry is 0.1-0.5 mm;
C. performing horizontal chain type diffusion on the silicon wafer with the boron paste printed on the back surface;
D. carrying out alkali cleaning on the back of the silicon wafer subjected to horizontal chain type diffusion by using a mixed solution of 10-15% of potassium hydroxide and 1-5% of hydrogen peroxide;
E. acid cleaning the silicon wafer subjected to alkali cleaning by using a mixed solution of 10-15% of hydrofluoric acid and 10-15% of hydrochloric acid;
F. printing phosphorus slurry containing P2O5 solid impurities on the front surface of the silicon chip after acid cleaning, wherein the distance between the phosphorus slurry and the edge of the silicon chip is 0.5-1mm, and the thickness of the phosphorus slurry is 0.1-0.5 mm;
G. performing horizontal chain type diffusion on the silicon wafer printed with the phosphorus paste;
H. carrying out acid cleaning on the silicon wafer subjected to horizontal chain type diffusion by using 10% -15% hydrochloric acid solution, and then cleaning and drying by using deionized water;
I. plating silicon nitride antireflection films on the two sides of the dried silicon wafer;
J. printing positive silver electrodes on the two sides of the silicon wafer;
K. and sintering the silicon wafer.
Preferably, in the step C, the horizontal chain type diffusion adopts a roller way type chain type diffusion furnace, the roller way type chain type diffusion furnace is divided into a drying area, a diffusion area and a cooling area, the temperature of the diffusion area is 850-; the temperature of the cooling zone is 150 ℃ and 250 ℃, and the belt speed is 50-100 m/min; the sheet resistance of boron diffusion is 80-100 omega.
Preferably, in the step G, the horizontal chain type diffusion adopts a roller way type chain type diffusion furnace, the roller way type chain type diffusion furnace is divided into a drying area, a diffusion area and a cooling area, the temperature of the diffusion area is 750-900 ℃, and the diffusion time is 10-45 min; the temperature of the cooling zone is 150 ℃ and 250 ℃, and the belt speed is 50-100 m/min; the sheet resistance of the phosphorus diffusion is 80-100 omega.
Preferably, in the step I, the thickness of the antireflection film is 70 to 90nm, and the refractive index is 2.00 to 2.10; the thickness of the back-face and front-face antireflection film is 70-90nm, and the refractive index is 2.00-2.10.
The invention discloses the following technical effects:
according to the invention, the silicon wafer is subjected to double-sided texturing by using a traditional texturing process, then printing on the surface of the silicon wafer by using a solid impurity diffusion source and double-sided diffusion by using a chain type horizontal diffusion process, and then double-sided film coating and double-sided printing of a positive silver electrode are carried out. Compared with the conventional double-sided battery, the double-sided battery preparation process adopting the method of the invention is simpler, and particularly, the printing process and the chain type diffusion process of the silicon chip surface by the solid impurity diffusion source effectively ensure that different diffusion sources at the edge are not doped with each other, and simultaneously reduce the leakage rate of the finished battery; compared with the traditional tubular diffusion process, the diffusion time of the chained diffusion process is greatly shortened, the square resistance of the silicon wafer is more uniform, the continuous production is realized, and the production efficiency is improved.
Detailed Description
The following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present invention will be described in further detail with reference to specific embodiments in order to make the above objects, features and advantages more apparent and understandable.
The invention provides a manufacturing method of a P-type double-sided crystalline silicon battery, which comprises the following steps:
A. alkali texturing is carried out on the two sides of the silicon wafer;
B. printing boron slurry containing solid impurity boron oxide on the back of the textured silicon wafer, wherein the boron slurry is 0.5-1mm away from the edge of the silicon wafer, and the thickness of the boron slurry is 0.1-0.5 mm;
C. performing horizontal chain type diffusion on the silicon wafer with the boron paste printed on the back surface; the horizontal chain type diffusion adopts a roller way type chain type diffusion furnace, the roller way type chain type diffusion furnace is divided into a drying area, a diffusion area and a cooling area, the temperature of the diffusion area is 850-950 ℃, and the diffusion time is 10-45 min; the temperature of the cooling zone is 150 ℃ and 250 ℃, and the belt speed is 50-100 m/min; the sheet resistance of boron diffusion is 80-100 omega.
D. Carrying out alkali cleaning on the back of the silicon wafer subjected to horizontal chain type diffusion by using a mixed solution of 10-15% of potassium hydroxide and 1-5% of hydrogen peroxide;
E. acid cleaning the silicon wafer subjected to alkali cleaning by using a mixed solution of 10-15% of hydrofluoric acid and 10-15% of hydrochloric acid;
F. printing phosphorus slurry containing P2O5 solid impurities on the front surface of the silicon chip after acid cleaning, wherein the distance between the phosphorus slurry and the edge of the silicon chip is 0.5-1mm, and the thickness of the phosphorus slurry is 0.1-0.5 mm;
G. performing horizontal chain type diffusion on the silicon wafer printed with the phosphorus paste; the horizontal chain type diffusion adopts a roller way type chain type diffusion furnace, the roller way type chain type diffusion furnace is divided into a drying area, a diffusion area and a cooling area, the temperature of the diffusion area is 750-900 ℃, and the diffusion time is 10-45 min; the temperature of the cooling zone is 150 ℃ and 250 ℃, and the belt speed is 50-100 m/min; the sheet resistance of the phosphorus diffusion is 80-100 omega.
H. Carrying out acid cleaning on the silicon wafer subjected to horizontal chain type diffusion by using 10% -15% hydrochloric acid solution, and then cleaning and drying by using deionized water;
I. plating silicon nitride antireflection films on the two sides of the dried silicon wafer; in the step I, the thickness of the antireflection film is 70-90nm, and the refractive index is 2.00-2.10; the thickness of the antireflection film on the back and the front is 70-90nm, and the refractive index is 2.00-2.10.
J. Printing positive silver electrodes on the two sides of the silicon wafer;
K. and sintering the silicon wafer.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solutions of the present invention can be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are within the scope of the present invention defined by the claims.
Claims (4)
1. A manufacturing method of a P-type double-sided crystalline silicon battery is characterized by comprising the following steps: the method comprises the following steps:
A. alkali texturing is carried out on the two sides of the silicon wafer;
B. printing boron slurry containing solid impurity boron oxide on the back of the textured silicon wafer, wherein the boron slurry is 0.5-1mm away from the edge of the silicon wafer, and the thickness of the boron slurry is 0.1-0.5 mm;
C. carrying out horizontal chain type diffusion on the silicon wafer with the boron slurry printed on the back surface by adopting a roller way type chain type diffusion furnace;
D. carrying out alkali cleaning on the back of the silicon wafer subjected to horizontal chain type diffusion by using a mixed solution of 10-15% of potassium hydroxide and 1-5% of hydrogen peroxide;
E. acid cleaning the silicon wafer subjected to alkali cleaning by using a mixed solution of 10-15% of hydrofluoric acid and 10-15% of hydrochloric acid;
F. will contain P2O5Printing phosphorus slurry of solid impurities on the front surface of the acid-cleaned silicon wafer, wherein the distance between the phosphorus slurry and the edge of the silicon wafer is 0.5-1mm, and the thickness of the phosphorus slurry is 0.1-0.5 mm;
G. carrying out horizontal chain type diffusion on the silicon wafer printed with the phosphorus slurry by adopting a roller way type chain type diffusion furnace;
H. carrying out acid cleaning on the silicon wafer subjected to horizontal chain type diffusion by using 10% -15% hydrochloric acid solution, and then cleaning and drying by using deionized water;
I. plating silicon nitride antireflection films on the two sides of the dried silicon wafer;
J. printing positive silver electrodes on the two sides of the silicon wafer;
K. and sintering the silicon wafer.
2. The method for manufacturing a P-type double-sided crystalline silicon battery according to claim 1, characterized in that: in the step C, the horizontal chain type diffusion adopts a roller way type chain type diffusion furnace, the roller way type chain type diffusion furnace is divided into a drying area, a diffusion area and a cooling area, the temperature of the diffusion area is 850-; the temperature of the cooling zone is 150 ℃ and 250 ℃, and the belt speed is 50-100 m/min; the sheet resistance of boron diffusion is 80-100 omega.
3. The method for manufacturing a P-type double-sided crystalline silicon battery according to claim 1, characterized in that: in the step G, the horizontal chain type diffusion adopts a roller way type chain type diffusion furnace, the roller way type chain type diffusion furnace is divided into a drying area, a diffusion area and a cooling area, the temperature of the diffusion area is 750-; the temperature of the cooling zone is 150 ℃ and 250 ℃, and the belt speed is 50-100 m/min; the sheet resistance of the phosphorus diffusion is 80-100 omega.
4. The method for manufacturing a P-type double-sided crystalline silicon battery according to claim 1, characterized in that: in the step I, the thickness of the double-sided silicon nitride antireflection film is 70-90nm, and the refractive index is 2.00-2.10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710649732.7A CN107359112B (en) | 2017-08-02 | 2017-08-02 | Manufacturing method of P-type double-sided crystalline silicon battery |
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| CN201710649732.7A CN107359112B (en) | 2017-08-02 | 2017-08-02 | Manufacturing method of P-type double-sided crystalline silicon battery |
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| CN107359112A CN107359112A (en) | 2017-11-17 |
| CN107359112B true CN107359112B (en) | 2021-06-01 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109616554A (en) * | 2018-12-13 | 2019-04-12 | 杭州海莱德智能科技有限公司 | A kind of chain type diffusion system |
| CN109950347A (en) * | 2019-04-02 | 2019-06-28 | 河北大学 | A kind of preparation method of double-side cell |
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| CN103811588A (en) * | 2014-01-26 | 2014-05-21 | 晶澳太阳能有限公司 | Double-faced diffusion technology of solar battery |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
| JP2016006885A (en) * | 2012-01-10 | 2016-01-14 | 日立化成株式会社 | Method for manufacturing substrate for solar cell and method for manufacturing solar cell element |
| CN106057951A (en) * | 2016-07-27 | 2016-10-26 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Double-sided solar cell based on P type silicon substrate and preparation method thereof |
| CN106098807A (en) * | 2016-06-27 | 2016-11-09 | 泰州乐叶光伏科技有限公司 | A kind of N-type crystalline silicon solar battery structure and preparation method thereof |
| CN106653942A (en) * | 2016-11-28 | 2017-05-10 | 内蒙古日月太阳能科技有限责任公司 | N-type monocrystalline silicon double-sided cell manufacturing method |
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- 2017-08-02 CN CN201710649732.7A patent/CN107359112B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016006885A (en) * | 2012-01-10 | 2016-01-14 | 日立化成株式会社 | Method for manufacturing substrate for solar cell and method for manufacturing solar cell element |
| CN103811588A (en) * | 2014-01-26 | 2014-05-21 | 晶澳太阳能有限公司 | Double-faced diffusion technology of solar battery |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
| CN106098807A (en) * | 2016-06-27 | 2016-11-09 | 泰州乐叶光伏科技有限公司 | A kind of N-type crystalline silicon solar battery structure and preparation method thereof |
| CN106057951A (en) * | 2016-07-27 | 2016-10-26 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Double-sided solar cell based on P type silicon substrate and preparation method thereof |
| CN106653942A (en) * | 2016-11-28 | 2017-05-10 | 内蒙古日月太阳能科技有限责任公司 | N-type monocrystalline silicon double-sided cell manufacturing method |
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