CN107353893A - 一种含芴环结构的四苯基乙烯有机电致发光材料及其有机发光器件 - Google Patents

一种含芴环结构的四苯基乙烯有机电致发光材料及其有机发光器件 Download PDF

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CN107353893A
CN107353893A CN201710568882.5A CN201710568882A CN107353893A CN 107353893 A CN107353893 A CN 107353893A CN 201710568882 A CN201710568882 A CN 201710568882A CN 107353893 A CN107353893 A CN 107353893A
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tetraphenylethylene
structure containing
compound
fluorenes ring
organic material
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孙可
孙可一
蔡辉
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Changchun Haipurunsi Technology Co Ltd
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Changchun Haipurunsi Technology Co Ltd
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Abstract

本发明提供一种含芴环结构的四苯基乙烯有机电致发光材料和有机发光器件，属于有机光电材料技术领域。解决现有技术中有机光电材料发光效率低、驱动电压高等发光性能差的技术问题。实验结果表明，采用本发明所述一种含芴环结构的四苯基乙烯有机电致发光材料制备的有机发光器件，发光效率最高可达19.4cd/A，驱动电压最低为5.5V，是一种优异的OLED材料。

Description

一种含芴环结构的四苯基乙烯有机电致发光材料及其有机发 光器件
技术领域
本发明涉及有机光电材料技术领域，具体涉及一种含芴环结构的四苯基乙烯有机电致发光材料及其有机发光器件。
背景技术
在OLED的研究中，有机材料的选择起着决定性的作用。四苯基乙烯合成简单，可以进行结构修饰的位点有很多。利用四苯基乙烯作为母核，连接常见的发光基团，可以大幅度减缓分子之间由于过度聚集导致的荧光淬灭问题，在有机电致材料方面具有很好的应用前景。芴类化合物是一类重要的主体材料，由于其具有的刚性结构，因此材料的玻璃化转化温度和热稳定性均较高。
OLED中用到的有机材料主要有空穴注入材料、空穴传输材料、发光材料、电子传输材料及电子注入材料等，而主体材料是发光层的主要材料。一般地说，所有的空穴或电子传输型主体材料掺杂客发光体形成发光层，激子复合区域会选择性地偏上某一边，从而导致器件效率与光色的改变，甚为严重的可能会引起三重态之间的能量淬灭，导致高亮度下发光效率滚降严重。此外，器件的驱动电压较高，也不甚理想。
发明内容
有鉴于此，本发明的目的在于提供一种含芴环结构的四苯基乙烯有机电致发光材料及其有机发光器件，本发明化合物以四苯基乙烯为母核，得到一种电致发光材料。采用本发明所述一种含芴环结构的四苯基乙烯有机电致发光材料制备的有机发光器件，具有更高的发光效率，及更低的驱动电压。
本发明首先提供了一种基于以四苯基乙烯为母核的有机发光材料，其结构通式如I所示：
其中，R1，R2独立的选自取代或未取代的C1-C20的脂肪族烃基、取代或未取代的C6-C50芳基、取代或未取代的C7-C50芳烷基、取代或未取代的C4-C50的芳香族杂环基。
优选的，所述的一种含芴环结构的四苯基乙烯的有机电致发光材料，其特征在于，R1，R2独立的选自取代或未取代的C1-C10的烷基、取代或未取代的C6-C30芳基、取代或未取代的C4-C50的芳香族杂环基。
优选的，所述的一种基于以四苯基乙烯为母核的有机发光材料，选自如下结构：
本发明还提供一种含芴环结构的四苯基乙烯有机电致发光材料制备的发光器件，包括第一电极、第二电极和置于所述两电极之间的一个或多个有机化合物层，至少一个有机化合物层包含至少一种含芴环结构的四苯基乙烯有机电致发光材料。
优选的，所述有机化合物层包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层中的至少一层。
本发明的有益效果：
本发明提供一种含芴环结构的四苯基乙烯有机电致发光材料制备的发光器件，本发明以四苯基乙烯为母核，得到一种含芴环结构的四苯基乙烯有机电致发光材料。
与现有技术相比，本发明的一种含芴环结构的四苯基乙烯有机电致发光材料制备的发光器件，发光效率最高可达19.4cd/A，驱动电压为5.5V，是一种优异的OLED材料。
具体实施方式
下面将结合本发明实施例的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明首先提供一种含芴环结构的四苯基乙烯有机电致发光材料，结构通式如I所示：
其中，R1，R2独立的选自取代或未取代的C1-C20的脂肪族烃基、取代或未取代的C6-C50芳基、取代或未取代的C7-C50芳烷基、取代或未取代的C4-C50的芳香族杂环基。
优选的，所述的一种含芴环结构的四苯基乙烯的有机电致发光材料，其特征在于，R1，R2独立的选自取代或未取代的C1-C10的烷基、取代或未取代的C6-C30芳基、取代或未取代的C4-C50的芳香族杂环基。
最优的，所述的一种含芴环结构的四苯基乙烯有机电致发光材料，其特征在于，选自如下结构：
本发明所述一种含芴环结构的四苯基乙烯有机电致发光材料的制备方法，包括所示的原料通过如下路线反应生成式I所示的一种含芴环结构的四苯基乙烯有机电致发光材料：
其中，R1，R2独立的选自取代或未取代的C1-C20的脂肪族烃基、取代或未取代的C6-C50芳基、取代或未取代的C7-C50芳烷基、取代或未取代的C4-C50的芳香族杂环基。
本发明对上述各类反应的反应条件没有特殊要求，以本领域技术人员熟知的此类反应的常规条件即可。本发明对上述各类反应中所采用的原料的来源没有特别的限制，可以为市售产品或采用本领域技术人员所熟知的制备方法制备得到。其中，所述R1，R2的选择同上所述，在此不再赘述。
本发明还提供一种含芴环结构的四苯基乙烯有机电致发光材料制备的有机器件，所述有机发光器件为本领域技术人员所熟知的有机发光器件即可。本发明所述有机发光器件包括第一电极、第二电极和置于两电极之间的一个或多个有机化合物层，至少一个有机化合物层包含至少一种本发明所述的一种含芴环结构的四苯基乙烯有机电致发光材料。所述有机化合物层优选包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层与电子注入层中的至少一层，优选所述的发光层中含有本发明所述的一种含芴环结构的四苯基乙烯有机电致发光材料。
实施例1：化合物1的制备
Step1，将100mmol 2-溴联苯溶解在无水THF中，降温到-78摄氏度，缓慢滴加2.5当量正丁基锂，反应2h，加入1当量的9，10-蒽醌的THF溶液。在缓慢升温至室温反应3h。反应完成后，加入大量水，有白色产品析出，过滤，滤饼经由柱层析得到产品89mmol 1-1。
Step2，将89mmol 1-1溶解在甲苯和冰醋酸的混合溶液中，回流反应2h。反应后将溶剂旋干，得到的粗品经由柱层析，得到1-2 72mmol。
Step3，取1-2 72mmol，100mmol 4-溴苯甲酮，4当量的锌粉，加入三口瓶中，氮气置换三次，在氮气保护下加入THF溶剂，冷却到-78℃，滴加2当量的TiCl4，滴加完毕后，缓慢升温至室温，逐渐加热到80℃，回流反应12h。反应完毕后，逐渐滴加饱和碳酸钠水溶液，直到有大量白色固体析出。过滤，粗品经由柱层析得到白色产品40mmol 1-3。
Step4，取40mmol 1-3，加入1当量的二甲胺盐酸盐，120mmol叔丁醇钾，0.4mmolPd2(dba)3，甲苯，氩气置换三次，加入0.8mmol三叔丁基膦，再次氩气置换三次，回流温度下反应10h，粗产品经由柱层析，得到产品32mmol化合物1。
实施例2：化合物2的制备
同实施例1，将Step4中的二甲胺盐酸盐替换为哌啶。
实施例3：化合物8的合成
同实施例1，将Step4中的二甲胺盐酸盐替换为二苯胺。
实施例4：化合物9的合成
同实施例1，将Step4中的二甲胺盐酸盐替换为咔唑。
实施例5：化合物10的合成
化合物10-0的合成
Step0，取100mmol化合物吲哚并[3,2-b]咔唑，加入1当量的溴苯，300mmol叔丁醇钾，1mmol Pd2(dba)3，甲苯，氩气置换三次，加入2mmol三叔丁基膦，再次氩气置换三次，回流温度下反应10h，粗产品经由柱层析，得到产品82mmol化合物10-0。
Step1，将100mmol 2-溴联苯溶解在无水THF中，降温到-78摄氏度，缓慢滴加2.5当量正丁基锂，反应2h，加入1当量的9，10-蒽醌的THF溶液。在缓慢升温至室温反应3h。反应完成后，加入大量水，有白色产品析出，过滤，滤饼经由柱层析得到产品89mmol 1-1。
Step2，将89mmol 1-1溶解在甲苯和冰醋酸的混合溶液中，回流反应2h。反应后将溶剂旋干，得到粗品经由柱层析，得到1-2 72mmol。
Step3，取1-2 72mmol，100mmol 4,4'-二溴苯甲酮，4当量的锌粉，加入三口瓶中，氮气置换三次，在氮气保护下加入THF溶剂，冷却到-78℃，滴加2当量的TiCl4，滴加完毕后，缓慢升温至室温，逐渐加热到80℃，回流反应12h。反应完毕后，逐渐滴加饱和碳酸钠水溶液，直到有大量白色固体析出。过滤，粗品经由柱层析得到白色产品40mmol 1-3。
Step4，取40mmol 1-3，加入1当量的10-0，120mmol叔丁醇钾，0.4mmol Pd2(dba)3，甲苯，氩气置换三次，加入0.8mmol三叔丁基膦，再次氩气置换三次，回流温度下反应10h，粗产品经由柱层析，得到产品32mmol化合物10。
实施例6：化合物15的合成
化合物15-0的合成
Step0，取100mmol二苯并[b,d]噻吩-2-胺，加入1当量的二苯并[b,d]噻吩-2-溴，300mmol叔丁醇钾，1mmol Pd2(dba)3，甲苯，氩气置换三次，加入2mmol三叔丁基膦，再次氩气置换三次，回流温度下反应10h，粗产品经由柱层析，得到产品82mmol化合物15-0。
其余步骤参考实施例1，Step4中的二甲胺盐酸盐替换为15-0。
实施例7：化合物16的合成
合成方法同实施例6。Step4中的15-0替换为：
实施例8：化合物18的合成
合成方法同实施例6。Step4中的15-0替换为：
实施例9：化合物19的合成
合成方法同实施例6。Step4中的15-0替换为：
实施例10：化合物28的合成
合成方法同实施例1。Step4中的二甲胺盐酸盐替换为：
实施例11：化合物29的合成
合成方法同实施例1。Step4中的二甲胺盐酸盐替换为：
实施例12：化合物31的合成
合成方法同实施例1。Step4中的二甲胺盐酸盐替换为：
实施例13：化合物40的合成
化合物40-0的合成：
Step0，取100mmol的苯胺盐酸盐，加入1当量的1-溴-4-(苯磺酰基)苯，300mmol叔丁醇钾，1mmol Pd2(dba)3，甲苯，氩气置换三次，加入2mmol三叔丁基膦，再次氩气置换三次，回流温度下反应10h，粗产品经由柱层析，得到产品82mmol化合物40-0。
其余步骤参考实施例1，Step4中的二甲胺盐酸盐替换为40-0。
实施例14：化合物42的合成
合成方法同实施例1。Step4中的二甲胺盐酸盐替换为：
实施例15：化合物44的合成
合成方法同实施例1。Step4中的二甲胺盐酸盐替换为：
实施例16：化合物46的合成
合成方法同实施例1。Step4中的二甲胺盐酸盐替换为：
本发明实施例制备得到的含芴环结构的四苯基乙烯有机电致发光材料的FD-MS值见表1所示。
表1本发明实施例制备的化合物FD-MS值
化合物 FD-MS
1 M/z:577.03，C44H35N(577.28)
2 M/z:605.14，C46H39N(605.31)
8 M/z:701.36，C54H39N(701.31)
9 M/z:699.09，C54H37N(699.29)
10 M/z:864.15，C66H44N2(864.35)
15 M/z:913.19，C66H43NS2(913.28)
16 M/z:881.53，C66H43NO2(881.33)
18 M/z:1031.32，C78H53N3(1031.42)
19 M/z:933.05，C72H55N(933.43)
28 M/z:715.18，C54H37NO(715.29)
29 M/z:731.38，C54H37NS(731.26)
31 M/z:741.33，C57H43N(741.34)
40 M/z:825.15，C60H43NOS(825.31)
42 M/z:901.03，C66H48NOP(901.35)
44 M/z:868.18，C66H48N2(868.38)
46 M/z:702.73，C53H38N2(702.30)
对比应用实施例1：
取ITO透明玻璃为阳极，超声清洗后干燥至于真空腔中，抽真空至5×10-5Pa，在上述阳极基板上真空蒸镀NPB作为空穴传输层，蒸镀速率为0.1nm/s，蒸镀厚度为70nm。在空穴传输层上真空蒸镀TAPC/FIrpic作为发光层，掺杂浓度为10wt％，蒸镀速率为0.005nm/s，蒸镀厚度为30nm。在发光层上真空蒸镀Alq3作为电子传输层，蒸镀速率为0.01nm/s，蒸镀厚度为50nm。在电子传输层上真空蒸镀Al层作为阴极，厚度为200nm。
应用实例1：
取ITO透明玻璃为阳极，超声清洗后干燥至于真空腔中，抽真空至5×10-5Pa，在上述阳极基板上真空蒸镀NPB作为空穴传输层，蒸镀速率为0.1nm/s，蒸镀厚度为70nm。在空穴传输层上真空蒸镀化合物1/FIrpic作为发光层，掺杂浓度为10wt％，蒸镀速率为0.005nm/s，蒸镀厚度为30nm。在发光层上真空蒸镀Alq3作为电子传输层，蒸镀速率为0.01nm/s，蒸镀厚度为50nm。在电子传输层上真空蒸镀Al层作为阴极，厚度为200nm。
应用实例2：
将应用实施例1中的化合物1换成化合物2。测量该器件的发光性能，结果见表2。
应用实例3：
将应用实施例1中的化合物1换成化合物8。测量该器件的发光性能，结果见表2。
应用实例4：
将应用实施例1中的化合物1换成化合物9。测量该器件的发光性能，结果见表2。
应用实例5：
将应用实施例1中的化合物1换成化合物10。测量该器件的发光性能，结果见表2。
应用实例6：
将应用实施例1中的化合物1换成化合物15。测量该器件的发光性能，结果见表2。
应用实例7：
将应用实施例1中的化合物1换成化合物16。测量该器件的发光性能，结果见表2。
应用实例8：
将应用实施例1中的化合物1换成化合物18。测量该器件的发光性能，结果见表2。
应用实例9：
将应用实施例1中的化合物1换成化合物19。测量该器件的发光性能，结果见表2。
应用实例10：
将应用实施例1中的化合物1换成化合物28。测量该器件的发光性能，结果见表2。
应用实例11：
将应用实施例1中的化合物1换成化合物29。测量该器件的发光性能，结果见表2。
应用实例12：
将应用实施例1中的化合物1换成化合物31。测量该器件的发光性能，结果见表2。
应用实例13：
将应用实施例1中的化合物1换成化合物40。测量该器件的发光性能，结果见表2。
应用实例14：
将应用实施例1中的化合物1换成化合物42。测量该器件的发光性能，结果见表2。
应用实例15：
将应用实施例1中的化合物1换成化合物44。测量该器件的发光性能，结果见表2。
应用实例16：
将应用实施例1中的化合物1换成化合物46。测量该器件的发光性能，结果见表2。
测量实施例1：对比样品以及样品的发光性能
对比样品以及样品是采用Keithley SMU235，PR650评价发光效率和驱动电压，结果列于表2中：
表2本发明实施例制备的发光器件的发光特性
以上可以看出，本发明的一种含芴环结构的四苯基乙烯有机电致发光材料在电致发光器件中进行应用，发光效率最高可达19.4cd/A，驱动电压最低为5.5V，较大的提高了器件的发光效率，是性能良好的有机发光材料。
虽然本发明用示范性实施方案进行了特别的描述，但应该理解在不偏离权利要求所限定的本发明的精神与范围的情况下，本领域普通技术人员可对其进行各种形式和细节上的改变。

Claims (5)

1.一种含芴环结构的四苯基乙烯有机电致发光材料，其结构通式如I所示：
其中，R1，R2独立的选自取代或未取代的C1-C20的脂肪族烃基、取代或未取代的C6-C50芳基、取代或未取代的C7-C50芳烷基、取代或未取代的C4-C50的芳香族杂环基中的一种。
2.根据权利要求1所述的一种含芴环结构的四苯基乙烯的有机电致发光材料，其特征在于，R1，R2独立的选自取代或未取代的C1-C10的烷基、取代或未取代的C6-C30芳基、取代或未取代的C4-C50的芳香族杂环基中的一种。
3.根据权利要求1或2所述的一种含芴环结构的四苯基乙烯有机电致发光材料，其特征在于，选自如下结构：
4.一种含芴环结构的四苯基乙烯有机电致发光材料的有机发光器件，包括第一电极、第二电极和置于所述两电极之间的一个或多个有机化合物层，其特征在于，至少一个有机化合物层包含至少一种如权利要求1～3任意一项中所述的一种含芴环结构的四苯基乙烯有机电致发光材料。
5.根据权利要求4所述的一种含芴环结构的四苯基乙烯有机电致发光材料制备的有机发光器件，其特征在于，所述有机化合物层包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层中的至少一层。
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