CN107342052B - 用于oled显示设备的像素驱动电路 - Google Patents
用于oled显示设备的像素驱动电路 Download PDFInfo
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Abstract
本发明提供了一种用于OLED显示设备的像素驱动电路。该像素驱动电路采用4T2C的像素结构,以在OLED显示设备在关机或者开机时检测到驱动薄膜晶体管的阈值电压以及有机发光二极管的开启电压,并在正常工作显示时将该检测到的阈值电压和有机发光二极管的开启电压补偿到数据信号中,从而消除驱动薄膜晶体管的阈值电压对有机发光二极管的驱动电流的影响,进而提高OLED显示设备显示画面的质量。
Description
技术领域
本发明属于显示技术领域,具体地讲,涉及一种用于OLED显示设备的像素驱动电路。
背景技术
近年来,有机发光二极管(Organic Light-Emitting Diode,OLED)显示设备成为国内外非常热门的新兴平面显示设备产品,这是因为OLED显示设备具有自发光、广视角、短反应时间、高发光效率、广色域、低工作电压、薄厚度、可制作大尺寸与可挠曲的显示设备及制程简单等特性,而且它还具有低成本的潜力。
在OLED显示设备中,通常利用薄膜晶体管(TFT)搭配电容存储信号来控制OLED的亮度灰阶表现。为了达到定电流驱动的目的,每个像素至少需要两个TFT和一个储存电容来构成,即2T1C模式。图1是现有的OLED显示设备的像素驱动电路的电路图。参照图1,现有的OLED显示设备的像素驱动电路包括两个薄膜晶体管(TFT)和一个电容器,具体地,包括一个开关TFT T1、一个驱动TFT T2和一个存储电容器Cst。OLED的驱动电流由驱动TFT T2控制,其电流大小为:IOLED=k(Vgs-Vth)2,其中,k为驱动TFT T2的本征导电因子,由驱动TFT T2本身特性决定,Vth为驱动TFT T2的阈值电压,Vgs为驱动TFT T2的栅极和源极之间的电压。由于长时间的操作,驱动TFT T2的阈值电压Vth会发生漂移,因此会导致OLED的驱动电流变化,从而使得OLED显示设备出现显示不良,进而影响显示画面的质量。
发明内容
为了解决上述现有技术的问题,本发明的目的在于提供一种能够消除驱动薄膜晶体管的阈值电压对有机发光二极管的驱动电流的影响的用于OLED显示设备的像素驱动电路及OLED显示设备。
根据本发明的一方面,提供了一种用于OLED显示设备的像素驱动电路,所述像素驱动电路包括:第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容器、第二电容器及有机发光二极管;所述第一薄膜晶体管的栅极电性连接于第一节点,且其源极电性连接于第二节点,且其漏极电性连接于直流电源正极;所述第二薄膜晶体管的栅极接入第二扫描信号,且其漏极电性连接于第一节点;所述第三薄膜晶体管的栅极接入第一扫描信号,且其源极电性连接于第二节点;所述第四薄膜晶体管的栅极接入第三扫描信号,且其漏极电性连接于第二节点;所述第一电容器的一端电性连接于第一节点,且其另一端电性连接于第二节点;所述第二电容器的一端电性连接于第二节点,且其另一端电性连接于低电位的参考信号;所述有机发光二极管的阳极电性连接于所述第三薄膜晶体管的漏极,且其阴极电性连接于直流电源负极;当所述OLED显示设备关机或者开机时,所述第二薄膜晶体管的源极接入第一数据信号,所述第四薄膜晶体管的源极接入初始化信号或者电压探测器,所述电压探测器用于探测所述第一薄膜晶体管的阈值电压以及所述有机发光二极管的开启电压,并分别生成阈值电压信号和开启电压补偿信号;当所述OLED显示设备正常工作显示时,所述第二薄膜晶体管的源极接入由所述阈值电压信号、所述开启电压补偿信号和原始数据信号组合形成的第二数据信号;其中,所述初始化信号和所述第一数据信号具有恒定低电位,所述原始数据信号具有单脉冲高电位。
进一步地,当所述OLED显示设备关机或者开机时,所述像素驱动电路执行复位操作、阈值电压感测操作和开启电压感测操作。
进一步地,当所述像素电路执行复位操作时,所述第一扫描信号为低电位,所述第二扫描信号和所述第三扫描信号为高电位,所述第四薄膜晶体管的源极接入所述初始化信号。
进一步地,当所述像素电路执行阈值电压感测操作时,所述第一扫描信号为低电位,所述第二扫描信号和所述第三扫描信号为高电位,所述第四薄膜晶体管的源极接入所述电压探测器。
进一步地,当所述像素电路执行开启电压感测操作时,所述第一扫描信号和所述第三扫描信号为高电位,所述第二扫描信号为低电位,所述第四薄膜晶体管的源极接入所述电压探测器。
进一步地,当所述OLED显示设备正常工作显示时,所述像素驱动电路执行复位操作、阈值电压检测操作、阈值电压补偿操作及驱动发光操作。
进一步地,当所述像素驱动电路执行复位操作时,所述第一扫描信号和所述第二扫描信号为高电位,所述第三扫描信号为低电位,所述第二数据信号为低电位的参考信号、所述阈值电压信号和所述开启电压补偿信号之和。
进一步地,当所述像素驱动电路执行阈值电压检测操作时,所述第一扫描信号和所述第三扫描信号为低电位,所述第二扫描信号为高电位,所述第二数据信号为低电位的参考信号、所述阈值电压信号和所述开启电压补偿信号之和。
进一步地,当所述像素驱动电路执行阈值电压补偿操作时,所述第一扫描信号和所述第三扫描信号为低电位,所述第二扫描信号为高电位,所述第二数据信号为高电位的显示数据信号、所述阈值电压信号和所述开启电压补偿信号之和。
进一步地,当所述像素驱动电路执行驱动发光操作,所述第一扫描信号为高电位,所述第二扫描信号和所述第三扫描信号为低电位,所述第二数据信号为低电位的参考信号、所述阈值电压信号和所述开启电压补偿信号之和。
本发明的有益效果:本发明的OLED显示设备在关机或者开机时检测到驱动薄膜晶体管的阈值电压以及有机发光二极管的开启电压,并在正常工作显示时将该检测到的阈值电压以及有机发光二极管的开启电压补偿到原始数据信号中,从而消除驱动薄膜晶体管的阈值电压对有机发光二极管的驱动电流的影响,进而提高OLED显示设备显示画面的质量。
附图说明
通过结合附图进行的以下描述,本发明的实施例的上述和其它方面、特点和优点将变得更加清楚,附图中:
图1是现有的OLED显示设备的像素驱动电路的电路图;
图2是根据本发明的实施例的有机发光二极管显示设备的架构图;
图3是根据本发明的实施例的有机发光二极管显示设备的像素驱动电路的电路图;
图4是根据本发明的实施例的像素驱动电路在关机或开机时的各工作阶段的时序图;
图5A至图5C是根据本发明的实施例的像素驱动电路在关机或开机时的工作过程图;
图6是根据本发明的实施例的像素驱动电路在正常工作显示时的各工作阶段的时序图;
图7A至图7D是根据本发明的实施例的像素驱动电路在正常工作显示时的工作过程图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中,为了清楚器件,夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
图2是根据本发明的实施例的有机发光二极管显示设备的架构图。
参照图2,根据本发明的实施例的有机发光二极管显示设备包括:显示面板100、扫描驱动器200和数据驱动器300。需要说明的是,根据本发明的是实力的有机发光二极管显示设备还可以包括其他合适的器件,诸如控制扫描驱动器200和数据驱动器300的时序控制器以及提供电源正极电压和电源负极电压的电源电压产生器等。
具体地,显示面板100包括:阵列排布的多个像素PX、N条扫描线G1至GN、M条数据线D1至DM。扫描驱动器200连接到扫描线G1至GN,并驱动扫描线G1至GN。数据驱动器300连接到数据线D1至DM,并驱动数据线D1至DM。
扫描驱动器200能够向每个像素PX提供一个或者多个扫描信号,之后将会描述。数据驱动器300能够向每个像素PX提供数据信号,之后也将会描述。
每个像素PX包括像素驱动电路。以下将对根据本发明的实施例的像素驱动电路(即像素PX的像素结构)进行详细描述。
图3是根据本发明的实施例的有机发光二极管显示设备的像素结构的等效电路图。
参照图3,根据本发明的实施例的有机发光二极管显示设备的每个像素PX都具有4T2C像素结构,所述4T2C像素结构包括有机发光二极管OLED、第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第一电容器C1和第二电容器C2。
第一薄膜晶体管T1的栅极电性连接于第一节点a,且其源极电性连接于第二节点b,且其漏极电性连接于直流电源正极Vdd。
第二薄膜晶体管T2的栅极接入第二扫描信号Scan2,且其漏极电性连接于第一节点a。
第三薄膜晶体管T3的栅极接入第一扫描信号Scan1,且其源极电性连接于第二节点b。
第四薄膜晶体管T4的栅极接入第三扫描信号Scan3,且其漏极电性连接于第二节点b。
第一电容器C1的一端电性连接于第一节点a,且其另一端电性连接于第二节点b。
第二电容器C2的一端电性连接于第二节点b,且其另一端电性连接于参考电压端VREF,其中该参考电压端VREF提供低电位为Vref的参考信号。
有机发光二极管OLED的阳极电性连接于第三薄膜晶体管T3的漏极,且其阴极电性连接于直流电源负极Vss。
其中,第一薄膜晶体管T1为驱动薄膜晶体管。
当有机发光二极管显示设备关机或者开机(或者关机后或开机后的预定时间内)时,第二薄膜晶体管T2的源极接入第一数据信号DATA1,第四薄膜晶体管T4的源极接入初始化信号INI或者电压探测器400,该电压探测器400用于探测第一薄膜晶体管T1的阈值电压Vth和有机发光二极管OLED的开启电压Voled,并根据阈值电压Vth生成阈值电压信号且根据有机发光二极管OLED的开启电压Voled生成开启电压补偿信号,该开启电压补偿信号的电压为ΔVoled,具体地的工作过程将在下面描述。需要说明的是,开启电压补偿信号的电压ΔVoled低于开启电压Voled。
当有机发光二极管显示设备正常工作显示(即开机后(或者开机后的预定时间之后)到关机前的时间内)时,第二薄膜晶体管T2的源极接入由所述阈值电压信号、原始数据信号和开启电压补偿信号组合形成的第二数据信号DATA2。
在本实施例中,初始化信号INI和第一数据信号DATA1具有恒定低电位,所述原始数据信号具有单脉冲高电位。
具体地,第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3及第四薄膜晶体管T4均为低温多晶硅薄膜晶体管、氧化物半导体薄膜晶体管或非晶硅薄膜晶体管。
第一扫描信号Scan1、第二扫描信号Scan2、第三扫描信号Scan2、初始化信号INI、第一数据信号DATA1及所述原始数据信号均通过外部时序控制器(未示出)产生。
以下将对根据本发明的实施例的像素驱动电路在关机或者开机时的工作原理进行详细描述。在本实施例中,采用了4T2C像素结构的根据本发明的实施例的像素驱动电路在关机或者开机时执行复位操作(即复位阶段)、阈值电压感测操作(即阈值电压感测阶段)和开启电压感测操作(即开启电压感测阶段)。图4是根据本发明的实施例的像素驱动电路在关机或开机时的各工作阶段的时序图;图5A至图5C是根据本发明的实施例的像素驱动电路在关机或开机时的工作过程图。在图5A至图5C中,薄膜晶体管上的叉符号(×)表示该薄膜晶体管处于截止状态。
在复位阶段,参照图4和图5A,第一扫描信号Scan1为低电位,第二扫描信号Scan2和第三扫描信号Scan3为高电位,第一数据信号DATA1为低电位VA,第四薄膜晶体管T4的源极接入初始化信号INI,第一初始化信号INI为低电位Vini;此时,第三薄膜晶体管T3截止,而第二薄膜晶体管T2和第四薄膜晶体管T4均导通,第一节点a的电压Va=VA,第二节点b的电压Vb=Vini,使Vini=VA,从而完成初始化。
在阈值电压感测阶段,参照图4和图5B,第一扫描信号Scan1为低电位,第二扫描信号Scan2和第三扫描信号Scan3均为高电位,第一数据信号DATA1为低电位VA,第四薄膜晶体管T4的源极接入电压探测器400;此时,第三薄膜晶体管T3截止,而第二薄膜晶体管T2和第四薄膜晶体管T4均导通,第一节点a的电压Va=VA,第二节点b的电压Vb=VA-Vth,从而电压探测器400探测到的电压为VA-Vth,其中Vth为第一薄膜晶体管T1的阈值电压。进一步地,电压探测器400经由其内部的计算,例如利用电压VA减去其探测到的电压,从而得到阈值电压Vth。之后,电压探测器400将其得到的阈值电压Vth进行反馈,并反馈给原始数据信号,具体将在下面描述。
在开启电压感测阶段,参照图4和图5C,第二扫描信号Scan2为低电位,第一扫描信号Scan1和第三扫描信号Scan3均为高电位,第四薄膜晶体管T4的源极接入电压探测器400;此时,第二薄膜晶体管T2截止,而第三薄膜晶体管T3和第四薄膜晶体管T4均导通,有机发光二极管OLED发光,第二节点b的电压Vb=Voled,其中Voled为有机发光二极管OLED的开启电压,从而电压探测器400探测到的电压为Voled。进一步地,电压探测器400经由其内部的计算,例如利用探测到电压Voled减去参考信号的电压Vref和阈值电压Vth,或者利用探测到的电压Voled减去在OLED显示设备正常工作时进行初始化操作时得到的有机发光二极管的开启电压(即在下面的复位阶段获取的第二节点b的电压),从而得到开启电压补偿信号的电压ΔVoled。
以下将对根据本发明的实施例的像素驱动电路在正常工作显示时的工作原理进行详细描述。在本实施例中,采用了4T2C像素结构的根据本发明的实施例的像素驱动电路在正常工作显示时执行复位操作(即复位阶段)、阈值电压检测操作(即阈值电压件测阶段)、阈值电压补偿操作(即阈值电压补偿阶段)及驱动发光操作(即驱动发光阶段)。图6是根据本发明的实施例的像素驱动电路在正常工作显示时的各工作阶段的时序图;图7A至图7D是根据本发明的实施例的像素驱动电路在正常工作显示时的工作过程图。在图7A至图7D中,薄膜晶体管上的叉符号(×)表示该薄膜晶体管处于截止状态。
在复位阶段,参照图6和图7A,第一扫描信号Scan1和第二扫描信号Scan2为高电位,第三扫描信号Scan3为低电位,第二数据信号DATA2为低电位Vref的参考信号、电压为ΔVoled的开启电压补偿信号与电压为Vth的阈值电压信号之和;此时,第四薄膜晶体管T4截止,第二薄膜晶体管T2与第三薄膜晶体管T3导通,第二数据信号DATA2经第二薄膜晶体管T2写入第一节点a(即第一薄膜晶体管T1的栅极),第二节点b的电压Vb为有机发光二极管OLED的开启电压Voled,有机发光二极管OLED发光。
在该复位阶段中:
Vg=Va=Vref+Vth+ΔVoled
Vs=Vb=Voled
其中,Vg表示第一薄膜晶体管T1的栅极电位,Va表示第一节点a的电位,Vs表示第一薄膜晶体管T1的源极电位,Vb表示第二节点b的电位,Voled为有机发光二极管OLED的开启电压,Vth表示第一薄膜晶体管T1的阈值电压,ΔVoled为开启电压补偿信号的电压。
在阈值电压检测阶段,参照图6和图7B,第一扫描信号Scan1和第三扫描信号为低电位,第二扫描信号Scan2为高电位,第二数据信号DATA2为低电位Vref的参考信号、电压为ΔVoled的开启电压补偿信号与电压为Vth的阈值电压信号之和;此时,第二薄膜晶体管T2导通,而第三薄膜晶体管T3和第四薄膜晶体管T4截止,第一节点a即第一薄膜晶体管T1的栅极依然写入第二数据信号DATA2,第二节点b即第一薄膜晶体管T1的源极电位转变为Vref+ΔVoled。
在该阈值电压检测阶段中:
Vg=Va=Vref+Vth+ΔVoled
Vs=Vb=Vref+ΔVoled
在阈值电压补偿阶段,参照图6和图7C,第一扫描信号Scan1和第三扫描信号Scan3为低电位,第二扫描信号Scan2为高电位,第二数据信号DATA2为高电位为Vdata的显示数据信号、电压为ΔVoled的开启电压补偿信号与电压为Vth的阈值电压信号之和;此时,第三薄膜晶体管T3与第四薄膜晶体管T4截止,第二薄膜晶体管T2导通,第二数据信号DATA2经过第二薄膜晶体管T2向写入第一节点a即第一薄膜晶体管T1的栅极,第二节点b即第一薄膜晶体管T1的源极电位转变为Vref+ΔVoled+ΔV,ΔV为显示数据信号高电位Vdata对第一薄膜晶体管T1的源极电位即第二节点b的电位所产生的影响,其与第一薄膜晶体管的阈值电压Vth无关。
在该阈值电压补偿阶段中:
Vg=Va=Vdata+Vth+ΔVoled
Vs=Vb=Vref+ΔV+ΔVoled
这样,第一薄膜晶体管T1的栅极电压Vg与源极电压Vs之间的差值Vgs为:
Vgs=Vg-Vs=Vdata+Vth-Vref-ΔV
在驱动发光阶段,参照图6和图7D,第一扫描信号Scan1为高电位,第二扫描信号Scan2和第三扫描信号Scan3为低电位,第二数据信号DATA2为低电位Vref的参考信号、电压为ΔVoled的开启电压补偿信号与电压为Vth的阈值电压信号之和;此时,第二薄膜晶体管T2和第三薄膜晶体管T3导通,第四薄膜晶体管T4截止,第一节点a即第一薄膜晶体管T1的栅极电位与第二节点b即第一薄膜晶体管T1的源极电位之间的压差Vgs保持不变。
进一步地,流经有机发光二极管OLED的电流I表示为:
I=K(Vgs-Vth)2=K(Vdate-Vref-ΔV+Vth-Vth)2=K(Vdate-Vref-ΔV)2,
其中,K表示第一薄膜晶体管T1的本征导电因子,由第一薄膜晶体管T1本身特性决定。
因此,在流经有机发光二极管OLED的电流I的表达式中,电流I与第一薄膜晶体管T1的阈值电压Vth无关,这样可以消除第一薄膜晶体管T1的阈值电压Vth漂移引起的画面显示不良现象。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (6)
1.一种用于OLED显示设备的像素驱动电路,其特征在于,所述像素驱动电路包括:第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第一电容器、第二电容器及有机发光二极管;
所述第一薄膜晶体管的栅极电性连接于第一节点,且其源极电性连接于第二节点,且其漏极电性连接于直流电源正极;
所述第二薄膜晶体管的栅极接入第二扫描信号,且其漏极电性连接于第一节点;
所述第三薄膜晶体管的栅极接入第一扫描信号,且其源极电性连接于第二节点;
所述第四薄膜晶体管的栅极接入第三扫描信号,且其漏极电性连接于第二节点;
所述第一电容器的一端电性连接于第一节点,且其另一端电性连接于第二节点;
所述第二电容器的一端电性连接于第二节点,且其另一端电性连接于低电位的参考信号;
所述有机发光二极管的阳极电性连接于所述第三薄膜晶体管的漏极,且其阴极电性连接于直流电源负极;
当所述OLED显示设备关机或者开机时,所述第二薄膜晶体管的源极接入第一数据信号,所述第四薄膜晶体管的源极接入初始化信号或者电压探测器,所述电压探测器用于探测所述第一薄膜晶体管的阈值电压以及所述有机发光二极管的开启电压,并分别生成阈值电压信号和开启电压补偿信号;
当所述OLED显示设备正常工作显示时,所述第二薄膜晶体管的源极接入由所述阈值电压信号、所述开启电压补偿信号和原始数据信号组合形成的第二数据信号;
其中,所述初始化信号和所述第一数据信号具有恒定低电位,所述原始数据信号具有单脉冲高电位;
其中,当所述OLED显示设备关机或者开机时,所述像素驱动电路顺序执行复位操作、阈值电压感测操作和开启电压感测操作;
其中,当所述OLED显示设备关机或者开机时,且所述像素驱动电路执行复位操作时,所述第一扫描信号为低电位,所述第二扫描信号和所述第三扫描信号为高电位,所述第四薄膜晶体管的源极接入所述初始化信号;
其中,当所述OLED显示设备关机或者开机时,且所述像素驱动电路执行阈值电压感测操作时,所述第一扫描信号为低电位,所述第二扫描信号和所述第三扫描信号为高电位,所述第四薄膜晶体管的源极接入所述电压探测器;
其中,当所述OLED显示设备关机或者开机时,且所述像素驱动电路执行开启电压感测操作时,所述第一扫描信号和所述第三扫描信号为高电位,所述第二扫描信号为低电位,所述第四薄膜晶体管的源极接入所述电压探测器。
2.根据权利要求1所述的像素驱动电路,其特征在于,当所述OLED显示设备正常工作显示时,所述像素驱动电路执行复位操作、阈值电压检测操作、阈值电压补偿操作及驱动发光操作。
3.根据权利要求2所述的像素驱动电路,其特征在于,当所述OLED显示设备正常工作显示时,且所述像素驱动电路执行复位操作时,所述第一扫描信号和所述第二扫描信号为高电位,所述第三扫描信号为低电位,所述第二数据信号为低电位的参考信号、所述阈值电压信号和所述开启电压补偿信号之和。
4.根据权利要求3所述的像素驱动电路,其特征在于,当所述OLED显示设备正常工作显示时,且所述像素驱动电路执行阈值电压检测操作时,所述第一扫描信号和所述第三扫描信号为低电位,所述第二扫描信号为高电位,所述第二数据信号为低电位的参考信号、所述阈值电压信号和所述开启电压补偿信号之和。
5.根据权利要求4所述的像素驱动电路,其特征在于,当所述OLED显示设备正常工作显示时,且所述像素驱动电路执行阈值电压补偿操作时,所述第一扫描信号和所述第三扫描信号为低电位,所述第二扫描信号为高电位,所述第二数据信号为高电位的显示数据信号、所述阈值电压信号和所述开启电压补偿信号之和。
6.根据权利要求5所述的像素驱动电路,其特征在于,当所述OLED显示设备正常工作显示时,且所述像素驱动电路执行驱动发光操作,所述第一扫描信号为高电位,所述第二扫描信号和所述第三扫描信号为低电位,所述第二数据信号为低电位的参考信号、所述阈值电压信号和所述开启电压补偿信号之和。
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US15/766,865 US10431157B2 (en) | 2017-08-18 | 2017-09-14 | OLED display device and pixel driving circuit thereof |
PCT/CN2017/101767 WO2019033487A1 (zh) | 2017-08-18 | 2017-09-14 | 用于oled显示设备的像素驱动电路及oled显示设备 |
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US10068529B2 (en) | 2016-11-07 | 2018-09-04 | International Business Machines Corporation | Active matrix OLED display with normally-on thin-film transistors |
CN107863067A (zh) * | 2017-12-05 | 2018-03-30 | 京东方科技集团股份有限公司 | 显示装置、像素电路及其补偿方法和补偿装置 |
CN109920373B (zh) * | 2017-12-13 | 2021-05-18 | 京东方科技集团股份有限公司 | 电路驱动补偿方法、电路驱动方法及装置、显示装置 |
KR102513208B1 (ko) * | 2017-12-22 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 패널, 표시 장치, 입출력 장치, 정보 처리 장치 |
CN110033733B (zh) * | 2019-04-19 | 2021-11-23 | 深圳市华星光电半导体显示技术有限公司 | Oled显示面板及其驱动方法 |
CN110520923B (zh) * | 2018-09-20 | 2022-05-13 | 京东方科技集团股份有限公司 | 具有时间共享信号线的像素电路、像素补偿方法和显示设备 |
CN109584801A (zh) * | 2018-12-14 | 2019-04-05 | 云谷(固安)科技有限公司 | 像素电路、显示面板、显示装置及驱动方法 |
CN110189697B (zh) * | 2019-06-25 | 2021-11-02 | 深圳市华星光电半导体显示技术有限公司 | 像素驱动电路及显示面板 |
CN110310603A (zh) * | 2019-07-09 | 2019-10-08 | 京东方科技集团股份有限公司 | 一种像素驱动电路及其驱动方法、显示面板、显示装置 |
CN110322836A (zh) * | 2019-07-22 | 2019-10-11 | 深圳市华星光电半导体显示技术有限公司 | 像素驱动电路及显示面板 |
US11176887B2 (en) * | 2019-10-10 | 2021-11-16 | Samsung Display Co., Ltd. | Display apparatus and method of driving the same |
CN111292694B (zh) * | 2020-02-18 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | 像素驱动电路及其驱动方法、显示面板 |
CN111312171B (zh) * | 2020-03-02 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | 一种像素驱动电路、oled显示面板及显示装置 |
US11315516B2 (en) | 2020-03-23 | 2022-04-26 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of driving pixel driving circuit solving problems of greater power consumption of blue phase liquid crystal panel |
CN111445852A (zh) * | 2020-05-06 | 2020-07-24 | Oppo广东移动通信有限公司 | 像素补偿电路、显示装置及补偿方法 |
CN114495822A (zh) * | 2021-12-27 | 2022-05-13 | 昆山国显光电有限公司 | 像素电路及其驱动方法和显示面板 |
CN114639341B (zh) * | 2022-02-28 | 2023-04-21 | 长沙惠科光电有限公司 | 像素驱动电路、显示面板和驱动方法 |
CN114783376A (zh) * | 2022-04-01 | 2022-07-22 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
CN115775534A (zh) * | 2022-11-24 | 2023-03-10 | 惠科股份有限公司 | 像素驱动电路、时序控制方法和显示面板 |
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