CN107331661A - A kind of cmos compatible hygrosensor and its manufacture method - Google Patents
A kind of cmos compatible hygrosensor and its manufacture method Download PDFInfo
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- CN107331661A CN107331661A CN201710486283.9A CN201710486283A CN107331661A CN 107331661 A CN107331661 A CN 107331661A CN 201710486283 A CN201710486283 A CN 201710486283A CN 107331661 A CN107331661 A CN 107331661A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000010410 layer Substances 0.000 claims description 245
- 239000000758 substrate Substances 0.000 claims description 34
- 239000011241 protective layer Substances 0.000 claims description 17
- 238000005468 ion implantation Methods 0.000 claims description 5
- -1 PAD metals Chemical class 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 206010057040 Temperature intolerance Diseases 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000008543 heat sensitivity Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermistors And Varistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a kind of cmos compatible hygrosensor and its manufacture method, by using road metal interconnecting layer after PAD layers or top layer with layer preset for make electrode PAD metals buried regions or top layer after road metal buried regions, the thermistor formation hygrosensor through injection doping or online doping treatment is made thereon again, therefore eliminate and independent electrode layer and thermal resistor layer are set after CMOS on road circuit, not only reduce thickness of detector (volume), and the step of technique makes is reduced, so as to reduce cost.Present invention process is simple, and completely compatible with CMOS technology, while using highly sensitive thermistor, can form high performance sensor.
Description
Technical field
, can be complete with CMOS technology more particularly, to one kind the present invention relates to semiconductor integrated circuit processing technique field
Complete compatible hygrosensor and its manufacture method.
Background technology
In recent years, with the development of integrated circuit processing technique, realizing the integrated technology of hygrosensor turns into a weight
The trend wanted.
At present, CMOS hygrosensors are typically to make the temperature sensing based on bandgap (band gap) using cmos circuit
Device circuit.Because hygrosensor circuit is to be made in chip substrate to be connected as a single entity with substrate, therefore with hot conduction property,
So as to which external temperature is transmitted into sensor circuit come sense temperature by the metal being arranged on substrate.
CMOS hygrosensors are integrated on the same chip by temperature-sensing element and peripheral circuit, so as to be detected with conventional temperature
Device, which is compared, multiple advantages such as small volume, low in energy consumption, good output.
Existing CMOS hygrosensors typically make on a chip substrate electrode and thermistor, utilizes metal electrode
As the heat conduction medium between hygrosensor thermistor and external environment condition, therefore thermistor can be according to metal electrode
Temperature under temperature change, accurate reflection external environment condition.
However, existing CMOS hygrosensors are when carrying out electrode and thermistor making, it usually needs after CMOS
Independent electrode layer and thermal resistor layer are set on road circuit, then passes through again and graphical further forms electrode and temperature-sensitive electricity
Resistance, thus thickness of detector (volume) is not only added, and the step of technique makes is added, so as to cause the increase of cost.
The content of the invention
It is an object of the invention to the drawbacks described above for overcoming prior art presence, there is provided a kind of cmos compatible temperature sensing
Device and its manufacture method, realize the diminution of device volume and the simplification of technique.
To achieve the above object, technical scheme is as follows：
A kind of cmos compatible hygrosensor, includes from bottom to top：
Substrate, the substrate is provided with the preceding road devices of CMOS；
Road metal interconnecting layer after CMOS is provided with rear track media layer on substrate, the rear track media layer；
PAD is provided with top layer dielectric layer on rear track media layer, the top layer dielectric layer；
Wherein, electrode is additionally provided with the top layer dielectric layer or rear track media layer, the electrode surface is covered with temperature-sensitive electricity
Resistance, the thermistor is exposed to top layer dielectric layer surface by temperature-sensitive window.
Preferably, in addition to：Protective layer in top layer dielectric layer, the thermistor is also exposed by temperature-sensitive window
In protective layer.
Preferably, the electrode is set with PAD with layer.
Preferably, the electrode is set with road metal interconnecting layer after the top layer in rear road metal interconnecting layer with layer.
A kind of manufacture method of above-mentioned cmos compatible hygrosensor, comprises the following steps：
One substrate is provided, the preceding road devices of CMOS are formed in the substrate；
Track media layer after being formed over the substrate, forms road metal interconnecting layer after CMOS in track media layer in the rear；
Top layer dielectric layer is formed on track media layer in the rear, PAD layers, the PAD are formed in the top layer dielectric layer
Layer includes PAD metal levels and PAD metal buried regions；
Protective layer is formed in the top layer dielectric layer；
Etch-protecting layer, stops at PAD metal buried regions, forms temperature-sensitive window；
Graphical PAD metal buried regions, forms electrode pattern；
Thermal resistor layer is formed on electrode pattern surface, and graphically forms thermistor；
Graphical PAD metal levels, form PAD.
Preferably, before forming thermal resistor layer on electrode pattern surface, first with NH3Or H2Or other reproducibility gas
Body carries out the removal of surface of metal electrode oxide layer.
Preferably, it is graphical to be formed before thermistor, ion implantation doping processing first is carried out to thermal resistor layer.
A kind of manufacture method of above-mentioned cmos compatible hygrosensor, comprises the following steps：
One substrate is provided, the preceding road devices of CMOS are formed in the substrate；
Track media layer after being formed over the substrate, forms road metal interconnecting layer after CMOS in track media layer in the rear,
Including road metal interconnecting layer after the top layer in road metal interconnecting layer in the rear with road metal buried regions after layer formation top layer；
Top layer dielectric layer is formed on track media layer in the rear, PAD layers are formed in the top layer dielectric layer；
Protective layer is formed in the top layer dielectric layer；
Etch-protecting layer, stops at metal buried regions in road after top layer, forms temperature-sensitive window；
Road metal buried regions after graphical top layer, forms electrode pattern；
Thermal resistor layer is formed on electrode pattern surface, and graphically forms thermistor；
Graphical PAD metal levels, form PAD.
Preferably, before forming thermal resistor layer on electrode pattern surface, first with NH3Or H2Or other reproducibility gas
Body carries out the removal of surface of metal electrode oxide layer.
Preferably, it is graphical to be formed before thermistor, ion implantation doping processing first is carried out to thermal resistor layer.
It can be seen from the above technical proposal that the present invention is pre- with layer by using road metal interconnecting layer after PAD layers or top layer
If road metal buried regions after the PAD metals buried regions or top layer for making electrode, then visited making thermistor formation temperature thereon
Device is surveyed, therefore eliminates independent electrode layer and thermal resistor layer is set after CMOS on road circuit, device is not only reduced
Thickness (volume), and the step of technique makes is reduced, so as to reduce cost.Present invention process is simple, and with CMOS works
Skill is completely compatible, while using highly sensitive thermistor, can form high performance sensor.
Brief description of the drawings
Fig. 1 is a kind of cmos compatible hygrosensor structural representation of first embodiment of the invention；
Fig. 2 is the CMOS compatibilities that Fig. 1 is made according to a kind of manufacture method of cmos compatible hygrosensor of the present invention
Hygrosensor structure when PAD layers formed PAD metal buried regions when structural representation；
Fig. 3 is a kind of cmos compatible hygrosensor structural representation of second embodiment of the invention；
Fig. 4 is the CMOS compatibilities that Fig. 3 is made according to a kind of manufacture method of cmos compatible hygrosensor of the present invention
Hygrosensor structure when after top layer road metal interconnecting layer formation top layer after road metal buried regions when structural representation.
Embodiment
The invention provides a kind of cmos compatible hygrosensor, the hygrosensor is at least to have from bottom to top
Substrate, rear track media layer, the sandwich construction of top layer dielectric layer；The substrate is provided with the preceding road devices of CMOS, the rear track media
It is provided with layer in road metal interconnecting layer after CMOS, the top layer dielectric layer and is provided with PAD.Wherein, the top layer dielectric layer or rear road
Electrode is additionally provided with dielectric layer, the electrode surface is covered with thermistor, and the thermistor is exposed to by temperature-sensitive window
Top layer dielectric layer surface.
Electrode in top layer dielectric layer or rear track media layer, can be omitted in after CMOS on road circuit and set by the present invention
Independent electrode layer and thermal resistor layer, therefore thickness of detector (volume) can be reduced, the step of technique makes is reduced, is reduced into
This, and form high performance sensor using highly sensitive thermistor.
Below in conjunction with the accompanying drawings, the embodiment to the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents the structure of the present invention in order to illustrate, spy, not according to general scale, and has carried out part to the structure in accompanying drawing
Amplification, deformation and simplified processing, therefore, should avoid being understood in this, as limitation of the invention.
In embodiment of the invention below, referring to Fig. 1, Fig. 1 is one kind of first embodiment of the invention
Cmos compatible hygrosensor structural representation.As shown in figure 1, a kind of cmos compatible hygrosensor of the present invention, from
Include on down：Substrate 10, rear track media layer 11, top layer dielectric layer 12 and protective layer 13, form sandwich construction.
Refer to Fig. 1.Substrate 10 can be using conventional silicon substrate；The substrate 10 is provided with as hygrosensor periphery
The preceding road devices of CMOS of a circuit part, include the grid 21 of each transistor.Over the substrate 10 provided with rear track media layer 11；It is described
Afterwards provided with road metal interconnecting layer 20 after the CMOS communicated with the preceding road devices of CMOS in track media layer 11；For example, it may include multilayer gold
Belong to interconnection line.Top layer dielectric layer 12 is provided with rear track media layer 11；PAD18 is provided with the top layer dielectric layer；The CMOS
Road metal interconnecting layer 20 is connected by through hole 19 with PAD18 afterwards, and realizes by PAD the extraction of signal.The top surface of the PAD18
Exposed to the surface of protective layer 13.
Refer to Fig. 1.The electrode 17 of hygrosensor is additionally provided with the top layer dielectric layer 12；Also, the electrode
17 can be set with PAD18 with layer.So, so that it may electrode is formed with the pre-buried PAD metals buried regions of layer using in PAD, so that nothing
Independent electrode layer must be set after CMOS on road circuit again, therefore the general thickness (volume) of device can be reduced, and reduced
The increase of the process fabrication steps brought by number of plies increase.
On the surface of the electrode 17 covered with thermistor 16, thermistor perceives external environment condition by metal electrode
Temperature.The thermistor 16 can be exposed to top layer dielectric layer table by the temperature-sensitive window 15 formed on the surface of top layer dielectric layer 12
Face.The thermistor can be made using the non-crystalline silicon or vanadium oxide of such as negative temperature coefficient.The thermistor can also be used
The doped amorphous silicon or vanadium oxide of negative temperature coefficient make, and its negative temperature coefficient is about -3% or so, thus can be had higher
Heat sensitivity and precision.
Refer to Fig. 1.Layer protective layer 13 can be set in top layer dielectric layer 12, the material such as silica can be used
Make.The opening as a temperature-sensitive window part is also formed with the protection layer, thus the thermistor 16 can pass through temperature-sensitive
Window 15 is exposed to protective layer.
The opening 14 drawn for PAD is equally also formed with protective layer 13.
Below by embodiment and accompanying drawing, to a kind of system of above-mentioned cmos compatible hygrosensor of the present invention
The method of making is described in detail.
A kind of manufacture method of above-mentioned cmos compatible hygrosensor of the present invention, comprises the following steps：
Refer to Fig. 1.One substrate 10, such as bulk silicon substrate are provided；First, formed in the substrate 10 before CMOS
Road device, including the grid 21 to form each transistor is made over the substrate.
Then, track media layer 11 after deposition is formed on the substrate 10, and make shape in track media layer 11 in the rear
Road metal interconnecting layer 20 and via layer after into CMOS.Wherein, road metal interconnecting layer and via layer may include multiple layer metal after CMOS
Interconnection line and the through hole 19 between each layer interconnection line.
Then, deposition forms top layer dielectric layer 12 on track media layer 11 in the rear, and in the top layer dielectric layer 12
Form PAD layers 18 ' and 17 '.Wherein, except needing in addition to the described PAD layers PAD metal level 18 ' formed for making PAD, also
The vacant position beyond PAD can be utilized in same layer, the PAD metals buried regions 17 ' for making electrode is preset, as shown in Figure 2.
Then, deposition forms protective layer 13, such as silicon dioxide layer of protection in the top layer dielectric layer 12.
Please continue to refer to Fig. 1.Then, protective layer 13 is patterned using photoetching and etching technics, and utilizes PAD gold
Category buried regions 17 ' is used as etching barrier layer；By etch-protecting layer, make etching stopping in PAD metal buried regions, so as to be formed and PAD
The opening that metal buried regions is communicated, the temperature-sensitive window 15 of ambient temperature is experienced as detector electrodes.
Next, using photoetching and etching technics, continuation is patterned to PAD metals buried regions 17 ', forms electrode figure
Shape 17.
After electrode pattern is formed, above-mentioned device can be moved into CVD process cavities (or PVD chamber), first with NH3Or
Person H2Gas, or other reducibility gas, are removed to the oxide layer that the surface of metal electrode 17 is present；Then, regrowth
Such as low temperature amorphous silicon layers (or vanadium oxide layer), thermistor layer film is formed on the surface of electrode pattern 17；Then, can be to heat
Quick resistive layer carries out ion implantation doping processing, and temperature-sensitive is used as by the non-crystalline silicon (or vanadium oxide) of ion implanting formation doping
Resistive layer.Can also be in CVD techniques, by being adulterated online to the thermistor layer film in growth course, to be formed
The thermal resistor layer of doping.Afterwards, thermal resistor layer is patterned, forms thermistor 16.
Finally, by the opening 14 that PAD is drawn that is used for formed on the protection layer, PAD metal levels are patterned, shape
Into PAD18, and complete the manufacturing process of device.
Referring to Fig. 3, Fig. 3 is a kind of cmos compatible hygrosensor structural representation of second embodiment of the invention.
As shown in figure 3, be with the cmos compatible hygrosensor structure difference of above-described embodiment, in the present embodiment, electrode
24 are provided in rear track media layer 11, and road metal interconnecting layer is set with layer after the top layer in Bing Yuhou roads metal interconnecting layer 20
(as soon as when only Ceng Hou roads metal interconnecting layer, being set with the Ceng Hou roads metal interconnecting layer with layer).So, so that it may using on top
Ceng Hou roads metal interconnecting layer 20 forms electrode 24 with road metal buried regions after the pre-buried top layer of layer, so that without the road after CMOS again
Independent electrode layer is set on circuit, therefore the general thickness (volume) of device can be reduced, and reduces the band because of number of plies increase
The increase of the process fabrication steps come.Meanwhile, thermistor 23 can be by the surface of top layer dielectric layer 12 and the table of protective layer 13
The temperature-sensitive window 22 that face is formed is exposed to protective layer, can have higher heat sensitivity and precision.The present embodiment its
His structure can be identical with the cmos compatible hygrosensor structure of Fig. 1 embodiments, repeats no more.
The manufacture method and CMOS in above-mentioned Fig. 1 of cmos compatible hygrosensor are simultaneous in a kind of above-mentioned Fig. 3 of the present invention
The difference of the manufacture method of the hygrosensor of appearance is, in the present embodiment, because electrode 24 is provided in rear track media
In layer 11, road metal interconnecting layer is set with layer after the top layer in Bing Yuhou roads metal interconnecting layer 20, therefore, after manufacturing road metal
After top layer in interconnection layer 20 during road metal interconnecting layer, in addition it is also necessary to road metal after the top layer in road metal interconnecting layer 20 in the rear
Interconnection layer forms road metal buried regions 24 ' after default top layer with layer, as shown in Figure 4.
Afterwards, as etching barrier layer, by etch-protecting layer 13, etching is made using road metal buried regions 24 ' after top layer
Stop at road metal buried regions 24 ' after top layer, thus formed with the opening that road metal buried regions is communicated after top layer, be used as detector electrodes
Experience the temperature-sensitive window 22 of ambient temperature.Then, by being patterned to road metal buried regions 24 ' after top layer, electricity is formed
Pole figure shape 24, and thermistor 23 is formed on electrode pattern surface, as shown in Figure 3.Other manufacturing steps of the present embodiment can
It is identical with the manufacture method of the cmos compatible hygrosensor of Fig. 1 embodiments, repeat no more.
In summary, the present invention is preset for making electrode by using road metal interconnecting layer after PAD layers or top layer with layer
PAD metals buried regions or top layer after road metal buried regions, then making thermistor formation hygrosensor thereon, therefore eliminating
Independent electrode layer and thermal resistor layer are set after CMOS on road circuit, thickness of detector (volume) is not only reduced, and
The step of technique makes is reduced, so as to reduce cost.Present invention process is simple, and completely compatible with CMOS technology, simultaneously
Using highly sensitive thermistor, high performance sensor can be formed.
Above-described is only the preferred embodiments of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly be should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of cmos compatible hygrosensor, it is characterised in that include from bottom to top：
Substrate, the substrate is provided with the preceding road devices of CMOS；
Road metal interconnecting layer after CMOS is provided with rear track media layer on substrate, the rear track media layer；
PAD is provided with top layer dielectric layer on rear track media layer, the top layer dielectric layer；
Wherein, electrode is additionally provided with the top layer dielectric layer or rear track media layer, the electrode surface is covered with thermistor, institute
State thermistor and top layer dielectric layer surface is exposed to by temperature-sensitive window.
2. cmos compatible hygrosensor according to claim 1, it is characterised in that also include：Located at top layer medium
Protective layer on layer, the thermistor is also exposed to protective layer by temperature-sensitive window.
3. cmos compatible hygrosensor according to claim 2, it is characterised in that the electrode is set with PAD with layer
Put.
4. cmos compatible hygrosensor according to claim 2, it is characterised in that the electrode and rear road metal are mutual
Even road metal interconnecting layer is set with layer after the top layer in layer.
5. a kind of manufacture method of cmos compatible hygrosensor as claimed in claim 3, it is characterised in that including following
Step：
One substrate is provided, the preceding road devices of CMOS are formed in the substrate；
Track media layer after being formed over the substrate, forms road metal interconnecting layer after CMOS in track media layer in the rear；
Top layer dielectric layer is formed on track media layer in the rear, PAD layers, the PAD layers of bag are formed in the top layer dielectric layer
Include PAD metal levels and PAD metal buried regions；
Protective layer is formed in the top layer dielectric layer；
Etch-protecting layer, stops at PAD metal buried regions, forms temperature-sensitive window；
Graphical PAD metal buried regions, forms electrode pattern；
Thermal resistor layer is formed on electrode pattern surface, and graphically forms thermistor；
Graphical PAD metal levels, form PAD.
6. the manufacture method of cmos compatible hygrosensor according to claim 5, it is characterised in that in electrode pattern
Surface is formed before thermal resistor layer, first with NH3Or H2Or other reducibility gas carry out surface of metal electrode oxide layer
Remove.
7. the manufacture method of cmos compatible hygrosensor according to claim 5, it is characterised in that graphical to be formed
Before thermistor, ion implantation doping processing first is carried out to thermal resistor layer.
8. a kind of manufacture method of cmos compatible hygrosensor as claimed in claim 4, it is characterised in that including following
Step：
One substrate is provided, the preceding road devices of CMOS are formed in the substrate；
Track media layer after being formed over the substrate, forms road metal interconnecting layer after CMOS in track media layer in the rear, including
Road metal interconnecting layer forms road metal buried regions after top layer with layer after the top layer in road metal interconnecting layer in the rear；
Top layer dielectric layer is formed on track media layer in the rear, PAD layers are formed in the top layer dielectric layer；
Protective layer is formed in the top layer dielectric layer；
Etch-protecting layer, stops at metal buried regions in road after top layer, forms temperature-sensitive window；
Road metal buried regions after graphical top layer, forms electrode pattern；
Thermal resistor layer is formed on electrode pattern surface, and graphically forms thermistor；
Graphical PAD metal levels, form PAD.
9. the manufacture method of cmos compatible hygrosensor according to claim 8, it is characterised in that in electrode pattern
Surface is formed before thermal resistor layer, first with NH3Or H2Or other reducibility gas carry out surface of metal electrode oxide layer
Remove.
10. the manufacture method of cmos compatible hygrosensor according to claim 8, it is characterised in that graphical shape
Into before thermistor, ion implantation doping processing first is carried out to thermal resistor layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114112055A (en) * | 2021-03-26 | 2022-03-01 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
| CN117174777A (en) * | 2023-10-26 | 2023-12-05 | 北京北方高业科技有限公司 | Absorption plate structure of amorphous silicon infrared detector and process method |
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| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| US20140097516A1 (en) * | 2012-10-10 | 2014-04-10 | Nxp B.V. | High-voltage integrated metal capacitor and fabrication method |
| CN104617095A (en) * | 2015-01-29 | 2015-05-13 | 江西师范大学 | Complementary metal oxide semiconductor (CMOS) gas sensor and forming method thereof |
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2017
- 2017-06-23 CN CN201710486283.9A patent/CN107331661B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| US20140097516A1 (en) * | 2012-10-10 | 2014-04-10 | Nxp B.V. | High-voltage integrated metal capacitor and fabrication method |
| CN104617095A (en) * | 2015-01-29 | 2015-05-13 | 江西师范大学 | Complementary metal oxide semiconductor (CMOS) gas sensor and forming method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114112055A (en) * | 2021-03-26 | 2022-03-01 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
| CN114112055B (en) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | Infrared detector based on CMOS technology and preparation method thereof |
| CN117174777A (en) * | 2023-10-26 | 2023-12-05 | 北京北方高业科技有限公司 | Absorption plate structure of amorphous silicon infrared detector and process method |
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