CN106629578A - Infrared detector with microbridge structure and production method thereof - Google Patents
Infrared detector with microbridge structure and production method thereof Download PDFInfo
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- CN106629578A CN106629578A CN201710080817.8A CN201710080817A CN106629578A CN 106629578 A CN106629578 A CN 106629578A CN 201710080817 A CN201710080817 A CN 201710080817A CN 106629578 A CN106629578 A CN 106629578A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
Abstract
The invention provides an infrared detector with microbridge structures and a production method thereof. The infrared detector comprises a base, wherein metal interconnection layers are formed in the surface of the base; the graphical microbridge structures which are partially suspended above the base, wherein the microbridge structures comprises bridge legs and bridge beams, the support beams are electrically connected with the metal interconnection layers, and the bridge beams are suspended and tilt upwards; and graphical infrared sensitive layers which are partially suspended above the microbridge structures, wherein the infrared sensitive layers are electrically connected with the bridge beams of the microbridge structures and are supported by the bridge beams. The yield of the infrared detector is improved and the relatively high performance is achieved.
Description
Technical field
The present invention relates to Infrared Detectors technical field, more particularly to a kind of Infrared Detectors with micro-bridge structure and its
Manufacture method.
Background technology
MEMS (MEMS) is a kind of technology for realizing small integrated device or system.It adopts integrated circuit
Or the proprietary technique for manufacturing batch of MEMS is manufactured, device or system dimension are at several microns to several millimeters.These devices (or
System) micro-scale structures can be sensed, control and drive, and effect is produced on a macroscopic scale.Last decade MEMS product
Have been widely used the various aspects of daily life, including accelerometer, pressure sensor, the intelligence of safe automobile air bag
Infrared Detectors of micro-microphone, gyroscope, ink jet-print head and non-brake method on energy electronic product etc..MEMS product is general
Comprising IC process circuits and MEMS structure two parts.Because MEMS technology is according to the difference of product, micro fabrication difference is very big,
It is poor with the IC chip processing compatibility of standard, so being difficult to realize scale integrated production always in early days.
At present, Infrared Detectors is usually basic in the ROIC (readout circuit chip) of the CMOS technology production using standard
On integrated MEMS structure again, obtain cavity structure using releasing sacrificial layer, perceived using sensitive material (non-crystalline silicon and vanadium oxide)
Absorb infrared temperature change and be converted to electric signal, the function of infrared detection is realized with this.Current Infrared Detectors is main
Developing direction improves the image resolution ratio of detector to reduce pixel structure size and increasing array sizes, expands infrared acquisition
The range of application of device, this makes the level of MEMS manufacturing process become the principal element of limit product performance.Little pixel structure
The stress that film can be reduced mismatches and strengthens detector sensitivity and resolution ratio；In addition, for identical array scale,
Little pixel structure means less detector and Lens, such that it is able to reduce the weight and chi of infrared thermal imagery instrument system
It is very little, increase the portability of thermal infrared imager.
Reduce infrared detector pixel dimensional directions on, when pixel it is little to 17 μm -15 μm after, main design starts to examine
Consider the MEMS structure of multilayer.One of which thinking is to be placed on centre into one layer by micro-bridge structure is individually designed, so can be increased most
The effective absorbing area of upper strata infrared absorption layer.Due to two-layer through hole in the Infrared Detectors technical process of this pair of sacrifice layer
Structure causes the infrared absorption layer surface texture of the superiors complicated, is easily caused levels after sacrifice layer release and connects in through hole
Touch, finally result in the failure of microbridge heat insulation, reduce yield.
Therefore, existing infrared detector structure and manufacture craft need further raising.
The content of the invention
The technical problem to be solved is to provide a kind of Infrared Detectors with micro-bridge structure and its manufacturer
Method.
In order to solve the above problems, the invention provides a kind of Infrared Detectors with micro-bridge structure, including：Substrate,
Metal interconnecting layer is formed with the substrate surface；Part is suspended on the patterned micro-bridge structure above the substrate, described
Micro-bridge structure includes bridge leg and bridge, and the bridge leg is electrically connected with the metal interconnecting layer, and the bridge is hanging and is upturned；
Part is suspended on patterned infrared sensitive layer above micro-bridge structure, and the bridge of the infrared sensitive layer and the micro-bridge structure
Beam is electrically connected, by the supporting bridge.
Optionally, metallic reflector is also formed with the substrate surface, the bridge is suspended on the metallic reflector
Top.
Optionally, the micro-bridge structure include the first stressor layers, the second stressor layers and positioned at first stressor layers with
Electrode layer between second stressor layers, the electrode layer is electrically connected with the metal interconnecting layer, infrared sensitive layer.
Optionally, the micro-bridge structure also includes being located at the electrical connection of electrode layer and metal interconnecting layer and infrared-sensitive
Electrode anchor point at layer and the electrical connection of bridge, the part electrode anchor point positioned between electrode layer and metal interconnecting layer, part
The electrode anchor point is located between electrode layer and the first stressor layers.
Optionally, the material of first stressor layers is one or more in silica, silicon nitride or silicon oxynitride；Institute
The material for stating the second stressor layers is one or more in silica, silicon nitride or silicon oxynitride.
Optionally, the infrared sensitive layer include lower floor's protective layer, upper strata protective layer and positioned at lower floor's protective layer,
Infrared sensitive thin film and electric connection layer between the protective layer of upper strata, the electric connection layer connects the infrared sensitive thin film and microbridge
Structure.
Optionally, the material of the infrared sensitive thin film is non-crystalline silicon or vanadium oxide；The material of lower floor's protective layer is
One or more in silica, silicon nitride or silicon oxynitride；The material of the upper strata protective layer is silica, silicon nitride or nitrogen
One or more in silica.
Optionally, the plan view shape of the bridge of the micro-bridge structure is S-shaped.
A kind of manufacture method of the Infrared Detectors with micro-bridge structure is also provided, including：Substrate, the substrate table are provided
Metal interconnecting layer is formed with face；Formed to have in the first sacrifice layer, first sacrifice layer in the substrate surface and be located at institute
State the first through hole on metal interconnecting layer surface；Formed graphically in the first through hole inner wall surface and the first sacrificial layer surface
Micro-bridge structure, the micro-bridge structure includes bridge leg and bridge, and the bridge leg is located in first through hole, with the metal interconnecting layer
Electrical connection, the bridge is located at the first sacrificial layer surface, is connected with the bridge leg, and the bridge has warping stress；Form the
Two sacrifice layers, second sacrifice layer covers the first sacrifice layer and micro-bridge structure, and with the positioned at the bridge surface
Two through holes；The figure above micro-bridge structure is formed on the second through-hole wall surface and second sacrificial layer surface
The infrared sensitive layer of change, the infrared sensitive layer is electrically connected with the bridge of the micro-bridge structure；Remove first sacrifice layer and
Second sacrifice layer so that the bridge is upturned under itself stress, so as to raise the infrared sensitive layer.
Optionally, the material of first sacrifice layer and the second sacrifice layer is non-crystalline silicon.
Optionally, the patterned micro-bridge structure includes the first stressor layers, electrode layer and the second stressor layers；The figure
The forming method of the micro-bridge structure of change includes：Forming first in the first through hole inner wall surface and the first sacrificial layer surface should
The dead-wood bed of material；The first stress material layer is etched along the first through hole, the metal interconnecting layer of first through hole bottom is exposed
Surface；Form the electrode material layer for covering the first stress material layer and metal interconnecting layer；Formed and cover the electrode material
Second stress material layer of layer；The second stress material layer, electrode material layer and the first stress material layer are etched, figure is formed
The micro-bridge structure of change.
Optionally, also include：Before the electrode material layer is formed, in the first stress material layer surface electricity is formed
Pole anchor point, the part electrode anchor point is located in first through hole and is electrically connected with metal interconnecting layer, and the part electrode anchor point is located at
First sacrifice layer top.
Optionally, the infrared sensitive layer includes：Lower floor's protective layer, upper strata protective layer and positioned at the lower floor protection
Graphical infrared sensitive thin film and electric connection layer between layer, upper strata protective layer, the electric connection layer connection is described graphical red
Outer sensitive thin film and micro-bridge structure；The forming method of the patterned infrared sensitive layer includes：In second through-hole wall
Surface and second sacrificial layer surface sequentially form lower floor's protected material bed of material, positioned at lower floor's protection materials layer surface
Patterned infrared sensitive thin film；Along infrared sensitive thin film, lower floor's protected material bed of material and second described in second via etch
Stressor layers, expose partial electrode layer surface；Form the electrical connection material layer of connection infrared sensitive thin film and electrode layer；Formation is covered
The upper strata protected material bed of material of the lid electrical connection material layer and infrared sensitive thin film；Etch the upper strata protected material bed of material, be electrically connected
Material layer, infrared sensitive thin film and lower floor's protected material bed of material are connect, the infrared sensitive layer is formed.
Optionally, first sacrifice layer and the second sacrifice layer are removed using xenon difluoride gas etching.
In the manufacture method of the Infrared Detectors with micro-bridge structure of the present invention, form logical with first in substrate surface
First sacrifice layer in hole, then the micro-bridge structure with warping stress is formed on the first sacrifice layer so that micro-bridge structure and substrate
Metal interconnecting layer connection, then the micro-bridge structure surface formed with the second through hole the second sacrifice layer, second sacrifice
Infrared sensitive layer is formed on layer, first sacrifice layer and the second sacrifice layer is then taken out, cavity is formed so that micro-bridge structure exists
Warpage under stress, raises infrared sensitive layer, so as to improve the thickness of hole cavity, and, it is to avoid infrared sensitive layer it is hanging
Part contacts with micro-bridge structure, improves the performance and yield of Infrared Detectors.Also, in the case where cavity thickness is certain, can
To reduce the thickness of the first sacrifice layer and the second sacrifice layer, so as to reduce the deep width of the first through hole in sacrifice layer, the second through hole
Than, the difficulty of each material layer depositions of reduction, and the size of the first through hole and the second through hole can be reduced, further reduce
The size of Infrared Detectors.
The Infrared Detectors with micro-bridge structure of the present invention has the micro-bridge structure of a warpage, raises infrared sensitive layer,
So that the cavity thickness in Infrared Detectors is larger, be conducive to improving the performance of Infrared Detectors, and, it is to avoid it is infrared quick
The overhanging portion of sense layer is contacted with micro-bridge structure, improves the yield of Infrared Detectors.
Description of the drawings
Fig. 1 shows for the flow process of the manufacture method of the Infrared Detectors with micro-bridge structure of the embodiment of the invention
It is intended to；
Fig. 2～Figure 16 is the manufacture process of the Infrared Detectors with micro-bridge structure of the embodiment of the invention
Structural representation；
Figure 17 is the plan view shape schematic diagram of the micro-bridge structure of the embodiment of the invention.
Specific embodiment
Below in conjunction with the accompanying drawings to the present invention provide the Infrared Detectors with micro-bridge structure and its manufacture method it is concrete
Embodiment elaborates.
Fig. 1 is refer to, is the manufacture method of the Infrared Detectors with micro-bridge structure of the embodiment of the invention
Flow process.
The manufacture method of the Infrared Detectors includes：
Step S101：Substrate is provided, in the substrate surface metal interconnecting layer is formed with.
Step S102：Formed to have in the first sacrifice layer, first sacrifice layer in the substrate surface and be located at the gold
The first through hole of category interconnection layer surfaces.
Step S103：Patterned microbridge knot is formed in the first through hole inner wall surface and the first sacrificial layer surface
Structure, the micro-bridge structure includes bridge leg and bridge, and the bridge leg is located in first through hole, electrically connects with the metal interconnecting layer,
The bridge is located at the first sacrificial layer surface, is connected with the bridge leg, and the bridge has warping stress.
Step S104：The second sacrifice layer is formed, second sacrifice layer covers the first sacrifice layer and micro-bridge structure, and has
There is the second through hole positioned at the bridge surface.
Step S105：Formed on the second through-hole wall surface and second sacrificial layer surface and be located at micro-bridge structure
The patterned infrared sensitive layer of top, the infrared sensitive layer is electrically connected with the bridge of the micro-bridge structure.
Step S106：Remove first sacrifice layer and the second sacrifice layer so that the bridge is under itself stress
It is upturned, so as to raise the infrared sensitive layer.
Fig. 2～16 are refer to, in being the embodiment of the invention, the manufacture of the Infrared Detectors with micro-bridge structure
During structural representation.
Refer to Fig. 2, there is provided substrate 100, the substrate 100 is formed with metal interconnecting layer 131 in surface.
In a detailed embodiment, the substrate 100 includes the first subbase bottom 110 and positioned at the first subbase bottom
Reading circuit is formed with the second subbase bottom 120 on 110 surfaces, the first subbase bottom 110；In the second subbase bottom 120
It is formed with the interconnection structure of connection reading circuit, including metal level 121, tungsten through hole 122, pad 123, and positioned at the second subbase
The metal interconnecting layer 131 on the surface of bottom 120.
Metal interconnecting layer 131 at two are shown, subsequently the formation two on the metal interconnecting layer 131 at two respectively in Fig. 2
Micro-bridge structure.In other specific embodiments, the array of metal interconnecting layer 131 is formed with the surface of the substrate 100, is subsequently existed
Micro-bridge structure array is formed in substrate 100.
Metallic reflector 132 is also formed in the same layer of the metal interconnecting layer 131, the metallic reflector 132 is to specific
The reflectivity of the infrared light of wavelength (such as 8 μm～14 μm) is more than 90%.It is described in a specific embodiment of the present invention
Metallic reflector 132 can be Al, Ti or Ta, be formed using physical gas-phase deposition, other interconnection metals be mutually linked as Ti or
TiN。
The substrate 100 also includes being deposited on the protective layer 130 on the surface of the second subbase bottom 120, the protective layer 130
Material be silica or silicon nitride, the protective layer 130 can be formed using chemical vapor deposition method, for example with wait from
Daughter strengthens the method for chemical vapor deposition (PECVD) and prepares, and realizes the flat of surface by CMP process, and
So that the thickness of the protective layer 130 is as far as possible thin.The main purpose of the protective layer 130 is to realize the table of metallic reflector 132
Face planarizes, it is easy to the photoetching of follow-up MEMS (MEMS) structure and etching.In a specific embodiment party of the present invention
In formula, the thickness of the protective layer 130 can be
Fig. 3 is refer to, is formed on the surface of the substrate 100 and is had in first sacrifice layer 200, first sacrifice layer 200
Positioned at the first through hole 201 on the surface of the metal interconnecting layer 131.
The material of first sacrifice layer 200 can be the non-crystalline silicon of non-crystalline silicon or doping.Plasma can be adopted
Strengthen the first sacrifice layer 200 described in chemical vapor deposition (PECVD) process deposits.The material of first sacrifice layer 200 and its
His dielectric layer material, for example silica, silicon nitride or silicon oxynitride etc. are with higher etching selection ratio.
After first sacrifice layer 200 is deposited, first sacrifice layer 200 is entered using the method for photoetching, etching
Row etching, forms first through hole 201, and the first through hole 201 is located on metal interconnecting layer 131.Dry etching can be adopted
Technique is performed etching to first sacrifice layer 200, to form the first through hole 201.
Subsequently, patterned micro-bridge structure, institute are formed in the first through hole inner wall surface and the first sacrificial layer surface
Micro-bridge structure is stated including bridge leg and bridge, the bridge leg is located in first through hole, electrically connects with the metal interconnecting layer, the bridge
Beam is located at the first sacrificial layer surface, is connected with the bridge leg, and the bridge has warping stress.
Fig. 4 is refer to, in the inwall of the first through hole 201 and the surface of the first sacrifice layer 200 the first stress material is formed
Layer 202.
The material of the first stress material layer 202 can be the one kind or several in silica, silicon nitride or silicon oxynitride
Kind, can be single or multiple lift structure.Formed using plasma reinforced chemical vapour deposition technique, by adjusting the deposition work
Each technological parameter in skill, adjusts the stress of the first stress material layer 202.
Fig. 5 is refer to, along the first through hole 201 the first stress material layer 202 is etched, expose first through hole
The surface of metal interconnecting layer 131 of 201 bottoms.
Continue the first stress material layer 202 and protective layer 130 for etching the bottom of first through hole 201, with the gold
Category interconnection layer 131 forms the first sub-through hole 203 as stop-layer, exposes metal interconnecting layer 131, and be easy to be subsequently formed is micro-
Bridge construction is formed with the metal interconnecting layer 131 and electrically connected.
Fig. 6 is refer to, on the surface of the first stress material layer 202 electrode anchor point layer 204, the electrode anchor point layer are formed
Full first sub-through hole 203 (refer to Fig. 5) of 204 fillings, electrically connects with the metal interconnecting layer 131.
The material of the electrode anchor point layer 204 is Ti or TiN, can form the electrode using physical gas-phase deposition
Anchor point layer 204.
Fig. 7 is refer to, the electrode anchor point layer 204 is etched, electrode anchor point 204a and electrode anchor point 204b is formed.Electrode anchors
Point 204a is located at the first sub-through hole 203 of the side wall of first through hole 201 and filling；Electrode anchor point 204b is located at the first sacrifice layer 200
On.
Fig. 8 is refer to, the electrode material for covering described electrode anchor point 204a, 204b and the first stress material layer 202 is formed
Layer 205.The material of the electrode material layer 205 is Ti or TiN, is formed using physical gas-phase deposition, for example with sputtering
Technique.Very low in view of the necessary thermal conductivity of micro-bridge structure as Infrared Detectors, the thickness of the electrode material layer 205 will use up
Amount is thin, to reduce the thermal conductivity of the electrode material layer 205, in a specific embodiment of the present invention, and the electrode material
The thickness of the bed of material 205 can be
In another embodiment of the present invention, it is also possible to directly in the surface shape of the first stress material layer 202
Into electrode material layer 205, directly electrically connected with metal interconnecting layer 131 by the electrode material layer 205, it is described without being formed
Electrode anchor point 204a, 204b.
Fig. 9 is refer to, on the surface of the electrode material layer 205 the second stress material layer is formed, and etch described second
Stress material layer, the stress material layer 202 of electrode material layer 205 and first, form patterned micro-bridge structure.
According to the micro-bridge structure figure for designing, Patterned masking layer is formed in the second stress material layer surface, adopted
The second stress material layer, the stress material layer 202 of electrode material layer 205 and first are etched with dry etch process, is formed micro-
Bridge construction, the micro-bridge structure includes that the second stressor layers 206a, electrode layer 205a, anchor point layer 204a and 204b and first should
Power layer 202a.In other specific embodiments of the present invention, the micro-bridge structure can also only include second stressor layers
206a, electrode layer 205a and the first stressor layers 202a.
The micro-bridge structure includes bridge leg and bridge structure, and the bridge leg is located in first through hole 201, mutual with the metal
Even layer 131 is electrically connected, and the bridge is located at the surface of the first sacrifice layer 200, is connected with the bridge leg, and there is the bridge warpage to answer
Power.
The material of second stressor layers 206a can be one or more in silica, silicon nitride or silicon oxynitride,
It can be single or multiple lift structure.Formed using plasma reinforced chemical vapour deposition technique, can be by the adjustment deposition
Each technological parameter in technique, adjusts the stress in second stressor layers 206a.
In first stressor layers 202a and the second stressor layers 206a answer power cooperation so that the micro-bridge structure have stick up
Transverse stress, the warping stress can make the bridge upwards when the bridge does not receive other materials layer adhesive attraction
Warpage.
Figure 10 is refer to, the second sacrifice layer 300 for covering the first sacrifice layer 200 and micro-bridge structure is formed.
The material of second sacrifice layer 300 can be the non-crystalline silicon of non-crystalline silicon or doping.Plasma can be adopted
Strengthen the second sacrifice layer 300 described in chemical vapor deposition (PECVD) process deposits.The material of second sacrifice layer 300 and its
His dielectric layer material, for example silica, silicon nitride or silicon oxynitride etc. are with higher etching selection ratio.
Due to the presence of the first through hole 201, the deposition speed of the second sacrifice layer 300 in the first through hole 201
Rate causes second sacrifice layer 300 to there is depression in the top of first through hole 201 less than the sedimentation rate at other positions, and
Thickness of the thickness of the second sacrifice layer 300 in first through hole 201 less than the second sacrifice layer 300 at other positions.
Figure 11 is refer to, second sacrifice layer 300 is etched, is formed in second sacrifice layer 300 positioned at microbridge knot
The second through hole 301 above structure bridge；Again on the inner wall surface of the second through hole 301 and the surface of the second sacrifice layer 300 successively
Form the lower floor protected material bed of material 302, positioned at the patterned infrared sensitive thin film 303 of lower floor's protection materials layer surface.
Second sacrifice layer 300 is performed etching using the method for photoetching, etching, forms the second through hole 301, described the
Two through holes 301 are located at bridge top, are preferably located at the electrode anchor point 204b tops.Can be using dry etch process to institute
State the second sacrifice layer 300 to perform etching, to form second through hole 301.
The material of lower floor's protected material bed of material 302 can be the one kind or several in silica, silicon nitride or silicon oxynitride
Kind, can be single or multiple lift structure.Lower floor's protected material can be formed using plasma reinforced chemical vapour deposition technique
The bed of material 302, in order to improve INFRARED ABSORPTION filter, the thickness of lower floor's protected material bed of material 302 is as far as possible thin, and by adjusting deposition
Technological parameter in technique so that 302 stress of lower floor's protected material bed of material are less or do not have, it is to avoid warpage occurs, affects red
Absorption of the outer sensitive thin film 303 to infrared light.
The material of the infrared sensitive thin film 303 is the thin-film material with high temperature coefficient of resistance (TCR), such as amorphous
Silicon or vanadium oxide etc..In a specific embodiment of the present invention, the material of the infrared sensitive thin film 303 is the non-of doping
Crystal silicon, is mainly formed using plasma reinforced chemical vapour deposition technique, and non-crystalline silicon is doped can be reduced resistivity and make an uproar
Sound；In another embodiment of the present invention, the material of the infrared sensitive thin film 303 is vanadium oxide, can adopt thing
Physical vapor deposition technique is formed, for example with sputtering technology.
Figure 12 is refer to, the infrared sensitive thin film 303 is patterned, form graphical infrared sensitive thin film
303a。
Figure 13 is refer to, along second through hole 301 the graphical infrared sensitive thin film 303a, lower floor's protected material are etched
Stressor layers 206a of the bed of material 302 and second, form the second sub-through hole 304 positioned at the lower section of the second through hole 301, expose partial electrode
Layer 205a surfaces.
In the specific embodiment of the present invention, second through hole 301 is located at electrode anchor point 204b tops, because
This, the metal layer thickness of the bottom of the second through hole 301 is larger, so as to reduce the etching for etching second sub-through hole 304
The difficulty of terminal, it is to avoid cut through metal level.
Figure 14 is refer to, the electrical connection material layer 305 of connection infrared sensitive thin film 303a and electrode layer 205a is formed.It is described
The electrode layer 205a of the lower section of the second through hole 301 is connected with the electrical connection material layer 305, and the electrical connection material layer 305 is filled
Full second sub-through hole 304.The material of electrical connection material layer 305 can be Ti or TiN, can adopt physical vapour deposition (PVD) work
Skill is formed after the electrical connection material layer 305 for covering infrared sensitive thin film 303a and the lower floor protected material bed of material 302, to the electricity
Connecting material layer 305 is patterned.
Figure 15 is refer to, the upper strata protected material for covering the electrical connection material layer 305 and infrared sensitive thin film 303a is formed
The bed of material；Etch the upper strata protected material bed of material, electrical connection material layer 305, infrared sensitive thin film 303a and lower floor's protected material bed of material
302, form the infrared sensitive layer.The infrared sensitive layer includes：Lower floor protective layer 302a, upper strata protective layer 306a and position
Graphical infrared sensitive thin film 303a and electric connection layer between lower floor's protective layer 302a, upper strata protective layer 306a
305a, the electric connection layer 305a connects the graphical infrared sensitive thin film 303a and micro-bridge structure.
The material of the upper strata protective layer 306a can be one or more in silica, silicon nitride or silicon oxynitride,
It can be single or multiple lift structure.The upper strata protection materials can be formed using plasma reinforced chemical vapour deposition technique
Layer, in order to improve INFRARED ABSORPTION filter, the thickness of the upper strata protected material bed of material is as far as possible thin, and by adjustment depositing operation
Technological parameter so that the upper strata protection materials ply stress is less or does not have, it is to avoid warpage occurs, affects infrared sensitive thin film
Absorptions of the 303a to infrared light.
Further, after the infrared sensitive layer is formed, also sacrifice including etching second sacrifice layer 300, first
In layer 200 and substrate 100, formation exposes the third through-hole 401 on the surface of the pad 123.
Figure 16 is refer to, the sacrifice layer 300 of the first sacrifice layer 200 and second is removed so that the bridge should at itself
It is upturned under power effect, so as to raise the infrared sensitive layer.
The sacrifice layer 300 of first sacrifice layer 200 and second is removed, is formed and is located between micro-bridge structure 210 and substrate 100
The first cavity, and the second cavity between infrared sensitive layer 310 and micro-bridge structure 210.The micro-bridge structure 210 with
The first cavity between substrate 100 plays conductive heat insulating function as chamber, the micro-bridge structure 210 is thermally isolated；It is described infrared quick
The second cavity between sense layer 310 and micro-bridge structure 210 improves the efficiency of INFRARED ABSORPTION as INFRARED ABSORPTION resonant cavity, described
Infrared sensitive layer 310 is used as infrared absorption layer.Infrared sensitive thin film 303a in infrared sensitive layer 310 absorbs infrared light, will be red
External signal is converted to electric signal, and by electric connection layer 305a micro-bridge structure 210 is passed to, by the electrode in micro-bridge structure 210
Layer 205a passes to the metal interconnecting layer 131 in substrate 100, is read by the reading circuit in substrate 100, so as to realize infrared letter
Number detection.
Selective etch technique can be adopted, it is sacrificial that such as dry etch process removes first sacrifice layer 200 and second
Domestic animal layer 300, in a specific embodiment of the present invention, using xenon difluoride gas etching first sacrifice layer is removed
200 and second sacrifice layer 300.The material and the first stressor layers 202a of the sacrifice layer 300 of first sacrifice layer 200 and second,
Two stressor layers 206a, lower floor protective layer 302a are compared with upper strata protective layer 306a, with higher etching ratio, therefore, in etching
During, first stressor layers 202a, the second stressor layers 206a can play protection to the metal level in micro-bridge structure 210 and make
With same lower floor's protective layer 302a and upper strata protective layer 306a also can be played to the metal level in infrared sensitive layer 310
Protective effect.
Due to having warping stress in first stressor layers 202a and the second stressor layers 206a, the first sacrifice layer is being discharged
200 and second after sacrifice layer 300, due to the bridge of the micro-bridge structure 210 it is hanging, in first stressor layers 202a and the
Under the stress of two stressor layers 206a, there is warpage in the bridge of the micro-bridge structure 210 so that one end lift of the bridge
Height, so that the infrared sensitive layer 310 being connected with the bridge is elevated, so as to improve the first cavity and the second cavity
Thickness.In the case where the first cavity and the second cavity thickness for needing is certain, etching reduces needing the first sacrifice layer of deposition
With the thickness of the second sacrifice layer, so as to reduce in the first sacrifice layer formed first through hole and the second sacrifice layer in formed
The depth-to-width ratio of the second through hole and recess, so as to reduce filling the film of the first through hole, the second through hole and recess
Deposition difficulty, and then the first through hole, the size of the second through hole can be further reduced, realize smaller size of infrared acquisition
Device.
The stress of adjustment first stressor layers 202a and the second stressor layers 206a can be passed through, the micro-bridge structure is adjusted
210 warpage degree.In another specific embodiment, the graphic structure of adjustment micro-bridge structure 210 can also be passed through, adjust institute
The internal stress of micro-bridge structure 210 is stated, so as to adjust warpage degree.Figure 17 is refer to, is the microbridge knot in a specific embodiment
The schematic top plan view of structure 210, the bridge 502 is located at the bridge leg 501 of micro-bridge structure and the connection of micro-bridge structure infrared sensitive layer
Between place 503, the plan view shape of the bridge 502 is S types so that have larger stress in bridge 502, and stress be difficult by
Release.Change the shape of the bridge 502, it is also possible to make the stress in the bridge 502 change, so as to change the bridge
Hogging of beam degree.Such design is readily available all qualified micro-bridge structure of warpage degree, electrical property, mechanical performance, drop
The low difficulty of process exploitation, also improves the compatibility of detector and CMOS technology.
Because the infrared sensitive layer 310 is elevated, between the infrared sensitive layer 310 and micro-bridge structure to it is second empty
Chamber thickness increase, due to surface indentation of second sacrifice layer 200 above first through hole under caused infrared sensitive layer 310
The distance between heavy part and micro-bridge structure 210 improve, it is to avoid the micro-bridge structure that infrared sensitive layer 310 goes out with first through hole
The possibility of 210 contacts, so as to ensure that heat insulation between the two, greatly improves the yield of release process.
The specific embodiment of the present invention also provides a kind of Infrared Detectors with micro-bridge structure.
Figure 16 is refer to, is the structural representation of the Infrared Detectors with micro-bridge structure.
The Infrared Detectors includes：Substrate 100, the substrate 100 is formed with metal interconnecting layer 131 in surface；Part
The patterned micro-bridge structure 210 of the top of the substrate 100 is suspended on, the micro-bridge structure 210 includes bridge leg and bridge, described
Bridge leg is electrically connected with the metal interconnecting layer 131, and the bridge is hanging and is upturned；Part is suspended on micro-bridge structure 210
The patterned infrared sensitive layer 310 of side, and the infrared sensitive layer 310 electrically connects with the bridge of the micro-bridge structure 210, by
The supporting bridge.
In a detailed embodiment, the substrate 100 includes the first subbase bottom 110 and positioned at the first subbase bottom
Reading circuit is formed with the second subbase bottom 120 on 110 surfaces, the first subbase bottom 110；In the second subbase bottom 120
It is formed with the interconnection structure of connection reading circuit, including metal level 121, tungsten through hole 122, pad 123, and positioned at the second subbase
The metal interconnecting layer 131 on the surface of bottom 120.Also there is the third through-hole 401 for exposing the surface of pad 123 in the substrate 100.
Metallic reflector 132 is also formed with the surface of the substrate 100, the bridge is suspended on the metallic reflector
132 tops.The metallic reflector 132 is to the reflectivity of the infrared light of specific wavelength (such as 8 μm～14 μm) more than 90%.
In a specific embodiment of the present invention, the metallic reflector 132 can be Al, Ti or Ta, using physical vapour deposition (PVD)
Technique is formed, and other interconnection metals are mutually linked as Ti or TiN.The substrate 100 also includes being deposited on the table of the second subbase bottom 120
The protective layer 130 in face, the material of the protective layer 130 is silica or silicon nitride.
The micro-bridge structure 210 includes the first stressor layers 202a, the second stressor layers 206a and positioned at first stress
Electrode layer 205a between layer 202a and the second stressor layers 206a, it is the electrode layer 205a and the metal interconnecting layer 131, infrared quick
Sense layer 310 is electrically connected.The material of the electrode layer 205a can be Ti or TiN.The thickness of the electrode layer 205a is as far as possible thin,
To reduce the thermal conductivity of the electrode layer 205a, in a specific embodiment of the present invention, the electrode layer 205a thickness
Can be
In this specific embodiment, further, the micro-bridge structure 210 also includes being located at electrode layer 205a and metal
Electrode anchor point at the electrical connection of interconnection layer 131 and at the electrical connection of infrared sensitive layer 310 and bridge, the part electrode anchors
Point 204a be located between electrode layer 205a and metal interconnecting layer 131, the part electrode anchor point 204b be located at electrode layer 205a with
Between first stressor layers 202a.The material of electrode the anchor point 204a and 204b is Ti or TiN.
The material of first stressor layers 202a is one or more in silica, silicon nitride or silicon oxynitride, can be with
For single or multiple lift structure；The material of second stressor layers 206a be silica, silicon nitride or silicon oxynitride in one kind or
It is various, can be single or multiple lift structure.First stressor layers 202a and the second stressor layers 206a have warping stress, make institute
The bridge for stating micro-bridge structure 210 keeps warpage, to raise the infrared sensitive layer 310 so that the infrared sensitive layer 310 is hanging
Part and the increase of the distance between micro-bridge structure 210, it is to avoid the infrared sensitive layer 310 is contacted with micro-bridge structure 210, causes heat
Failure of insulation, affects the performance of Infrared Detectors.Also, between the overhanging portion of the infrared sensitive layer 310 and micro-bridge structure 210
Distance increase, also improve the thickness of the second cavity between infrared sensitive layer 310 and micro-bridge structure 210, described second is empty
Chamber is conducive to improving INFRARED ABSORPTION efficiency as INFRARED ABSORPTION resonant cavity, thickness increase.The warpage of the micro-bridge structure 310, also makes
The first cavity thickness obtained between micro-bridge structure 210 and substrate 100 is larger, and first cavity is got over as chamber, thickness is thermally isolated
Greatly, effect is thermally isolated better.
The infrared sensitive layer 310 includes lower floor protective layer 302a, upper strata protective layer 306a and protects positioned at the lower floor
Infrared sensitive thin film 303a and electric connection layer 305a between sheath 302a, upper strata protective layer 306a, the electric connection layer 305a
Connect the infrared sensitive thin film 303a and micro-bridge structure 210.The specific electric connection layer 305a is connected with electrode layer 205a.
The material of the infrared sensitive thin film 303a is non-crystalline silicon or vanadium oxide；The material of lower floor's protective layer 302a is
One or more in silica, silicon nitride or silicon oxynitride, can be single or multiple lift structure；The upper strata protective layer 306a
Material be silica, silicon nitride or silicon oxynitride in one or more, can be single or multiple lift structure.The upper strata is protected
The stress of sheath 306a and lower floor protective layer 302a is less or does not have, it is to avoid the infrared sensitive layer 310 occurs warpage, affects institute
State absorption of the infrared sensitive layer 310 to infrared light.
Figure 17 is refer to, in this specific embodiment, the bridge 502 of the micro-bridge structure 210 is located at micro-bridge structure
Between the junction 503 of bridge leg 501 and micro-bridge structure 210 and infrared sensitive layer 310, the plan view shape of the bridge 502 is S
Type so that there is larger stress in bridge 502, and stress is difficult to be released.Change the shape of the bridge 502, it is also possible to
The stress in the bridge 502 is set to change, so as to change the warpage degree of the bridge.In other concrete realities of the present invention
In applying mode, the micro-bridge structure 210 can also be other figures, so that micro-bridge structure 210 has different internal stress, from
And adjust the warpage degree of the bridge.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, and these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (14)
1. a kind of Infrared Detectors with micro-bridge structure, it is characterised in that include：
Substrate, in the substrate surface metal interconnecting layer is formed with；
Part is suspended on the patterned micro-bridge structure above the substrate, and the micro-bridge structure includes bridge leg and bridge, described
Bridge leg is electrically connected with the metal interconnecting layer, and the bridge is hanging and is upturned；
Part is suspended on the patterned infrared sensitive layer above micro-bridge structure, and the infrared sensitive layer and the micro-bridge structure
Bridge electrical connection, by the supporting bridge.
2. the Infrared Detectors with micro-bridge structure according to claim 1, it is characterised in that in the substrate surface also
Metallic reflector is formed with, the bridge is suspended on the metallic reflector top.
3. the Infrared Detectors with micro-bridge structure according to claim 1, it is characterised in that the micro-bridge structure includes
First stressor layers, the second stressor layers and the electrode layer between first stressor layers and the second stressor layers, the electrode
Layer is electrically connected with the metal interconnecting layer, infrared sensitive layer.
4. the Infrared Detectors with micro-bridge structure according to claim 3, it is characterised in that the micro-bridge structure is also wrapped
Include the electrode anchor point at the electrical connection of electrode layer and metal interconnecting layer and at the electrical connection of infrared sensitive layer and bridge, portion
The electrode anchor point is divided to be located between electrode layer and metal interconnecting layer, the part electrode anchor point is located at electrode layer and the first stress
Between layer.
5. the Infrared Detectors with micro-bridge structure according to claim 3, it is characterised in that first stressor layers
Material is one or more in silica, silicon nitride or silicon oxynitride；The material of second stressor layers is silica, nitridation
One or more in silicon or silicon oxynitride.
6. the Infrared Detectors with micro-bridge structure according to claim 1 or 3, it is characterised in that the infrared-sensitive
Layer includes that lower floor's protective layer, upper strata protective layer and the infrared-sensitive between lower floor's protective layer, upper strata protective layer are thin
Film and electric connection layer, the electric connection layer connects the infrared sensitive thin film and micro-bridge structure.
7. the Infrared Detectors with micro-bridge structure according to claim 6, it is characterised in that the infrared sensitive thin film
Material be non-crystalline silicon or vanadium oxide；The material of lower floor's protective layer is the one kind in silica, silicon nitride or silicon oxynitride
Or it is several；The material of the upper strata protective layer is one or more in silica, silicon nitride or silicon oxynitride.
8. the Infrared Detectors with micro-bridge structure according to claim 1, it is characterised in that the bridge of the micro-bridge structure
The plan view shape of beam is S-shaped.
9. a kind of manufacture method of the Infrared Detectors with micro-bridge structure, it is characterised in that include：
Substrate is provided, in the substrate surface metal interconnecting layer is formed with；
Formed in the first sacrifice layer, first sacrifice layer in the substrate surface and had positioned at the metal interconnecting layer surface
First through hole；
Patterned micro-bridge structure, the micro-bridge structure are formed in the first through hole inner wall surface and the first sacrificial layer surface
Including bridge leg and bridge, the bridge leg is located in first through hole, electrically connects with the metal interconnecting layer, and the bridge is located at first
Sacrificial layer surface, is connected with the bridge leg, and the bridge has warping stress；
The second sacrifice layer is formed, second sacrifice layer covers the first sacrifice layer and micro-bridge structure, and with positioned at the bridge
Second through hole on beam surface；
Form graphical above micro-bridge structure on the second through-hole wall surface and second sacrificial layer surface
Infrared sensitive layer, the infrared sensitive layer electrically connects with the bridge of the micro-bridge structure；
Remove first sacrifice layer and the second sacrifice layer so that the bridge is upturned under itself stress, so as to
Raise the infrared sensitive layer.
10. the manufacture method of the Infrared Detectors with micro-bridge structure according to claim 9, it is characterised in that described
The material of the first sacrifice layer and the second sacrifice layer is non-crystalline silicon.
The manufacture method of 11. Infrared Detectors with micro-bridge structure according to claim 9, it is characterised in that described
Patterned micro-bridge structure includes the first stressor layers, electrode layer and the second stressor layers；The formation of the patterned micro-bridge structure
Method includes：The first stress material layer is formed in the first through hole inner wall surface and the first sacrificial layer surface；Along described
First stress material layer described in one via etch, exposes the metal interconnecting layer surface of first through hole bottom；Formed and cover described
The electrode material layer of the first stress material layer and metal interconnecting layer；Form the second stress material for covering the electrode material layer
Layer；The second stress material layer, electrode material layer and the first stress material layer are etched, patterned micro-bridge structure is formed.
The manufacture method of 12. Infrared Detectors with micro-bridge structure according to claim 11, it is characterised in that also wrap
Include：Before the electrode material layer is formed, in the first stress material layer surface electrode anchor point, the part electrode are formed
Anchor point is located in first through hole and is electrically connected with metal interconnecting layer, and the part electrode anchor point is located at the first sacrifice layer top.
The manufacture method of 13. Infrared Detectors with micro-bridge structure according to claim 11, it is characterised in that described
Infrared sensitive layer includes：Lower floor's protective layer, upper strata protective layer and the figure between lower floor's protective layer, upper strata protective layer
Shape infrared sensitive thin film and electric connection layer, the electric connection layer connects the graphical infrared sensitive thin film and micro-bridge structure；
The forming method of the patterned infrared sensitive layer includes：In the second through-hole wall surface and second sacrifice layer
Surface sequentially forms lower floor's protected material bed of material, positioned at the patterned infrared sensitive thin film of lower floor's protection materials layer surface；
Along infrared sensitive thin film, lower floor's protected material bed of material and the second stressor layers described in second via etch, partial electrode is exposed
Layer surface；Form the electrical connection material layer of connection infrared sensitive thin film and electrode layer；Formed cover it is described electrical connection material layer and
The upper strata protected material bed of material of infrared sensitive thin film；Etch the upper strata protected material bed of material, electrical connection material layer, infrared sensitive thin film
With lower floor's protected material bed of material, the infrared sensitive layer is formed.
The manufacture method of 14. Infrared Detectors with micro-bridge structure according to claim 9, it is characterised in that adopt
Xenon difluoride gas etching removes first sacrifice layer and the second sacrifice layer.
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