CN107331604B - 一种键合设备 - Google Patents

一种键合设备 Download PDF

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CN107331604B
CN107331604B CN201610284256.9A CN201610284256A CN107331604B CN 107331604 B CN107331604 B CN 107331604B CN 201610284256 A CN201610284256 A CN 201610284256A CN 107331604 B CN107331604 B CN 107331604B
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plate
pressure plate
assembly
flexible
bonding
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CN107331604A (zh
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付辉
商飞祥
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Priority to CN201610284256.9A priority Critical patent/CN107331604B/zh
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to TW106114198A priority patent/TWI663634B/zh
Priority to PCT/CN2017/082390 priority patent/WO2017186161A1/zh
Priority to JP2018555956A priority patent/JP6700423B2/ja
Priority to KR1020187034547A priority patent/KR102177305B1/ko
Priority to US16/097,520 priority patent/US10780684B2/en
Priority to SG11201809491TA priority patent/SG11201809491TA/en
Publication of CN107331604A publication Critical patent/CN107331604A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/80—General aspects of machine operations or constructions and parts thereof
    • B29C66/82—Pressure application arrangements, e.g. transmission or actuating mechanisms for joining tools or clamps
    • B29C66/826—Pressure application arrangements, e.g. transmission or actuating mechanisms for joining tools or clamps without using a separate pressure application tool, e.g. the own weight of the parts to be joined
    • B29C66/8266—Pressure application arrangements, e.g. transmission or actuating mechanisms for joining tools or clamps without using a separate pressure application tool, e.g. the own weight of the parts to be joined using fluid pressure directly acting on the parts to be joined
    • B29C66/82661—Pressure application arrangements, e.g. transmission or actuating mechanisms for joining tools or clamps without using a separate pressure application tool, e.g. the own weight of the parts to be joined using fluid pressure directly acting on the parts to be joined by means of vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B1/00—Presses, using a press ram, characterised by the features of the drive therefor, pressure being transmitted directly, or through simple thrust or tension members only, to the press ram or platen
    • B30B1/18—Presses, using a press ram, characterised by the features of the drive therefor, pressure being transmitted directly, or through simple thrust or tension members only, to the press ram or platen by screw means
    • B30B1/181—Presses, using a press ram, characterised by the features of the drive therefor, pressure being transmitted directly, or through simple thrust or tension members only, to the press ram or platen by screw means the screw being directly driven by an electric motor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
    • B30B15/06—Platens or press rams
    • B30B15/061—Cushion plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B5/00—Presses characterised by the use of pressing means other than those mentioned in the preceding groups
    • B30B5/02—Presses characterised by the use of pressing means other than those mentioned in the preceding groups wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/80—General aspects of machine operations or constructions and parts thereof
    • B29C66/81—General aspects of the pressing elements, i.e. the elements applying pressure on the parts to be joined in the area to be joined, e.g. the welding jaws or clamps
    • B29C66/816—General aspects of the pressing elements, i.e. the elements applying pressure on the parts to be joined in the area to be joined, e.g. the welding jaws or clamps characterised by the mounting of the pressing elements, e.g. of the welding jaws or clamps
    • B29C66/8163—Self-aligning to the joining plane, e.g. mounted on a ball and socket
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/80—General aspects of machine operations or constructions and parts thereof
    • B29C66/82—Pressure application arrangements, e.g. transmission or actuating mechanisms for joining tools or clamps
    • B29C66/822—Transmission mechanisms
    • B29C66/8223—Worm or spindle mechanisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/80—General aspects of machine operations or constructions and parts thereof
    • B29C66/83—General aspects of machine operations or constructions and parts thereof characterised by the movement of the joining or pressing tools
    • B29C66/832—Reciprocating joining or pressing tools
    • B29C66/8322—Joining or pressing tools reciprocating along one axis

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
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  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

本发明提供一种键合设备，通过在上压盘组件与传动装置之间设置柔性压盘，上压盘组件的柔性压盘位于真空腔体内部，由于柔性压盘为可伸缩结构，当柔性压盘伸长或者膨胀体积增大时，柔性压盘给予与其连接的上压盘组件向下的压力，从而使得上压盘组件缓慢向下移动，直至上压盘组件与下压盘组件皆均匀紧贴键合对象后，柔性压盘继续给予上压盘组件向下的压力，这样使得上压盘组件能够对键合对象均匀施压，且由于柔性压盘具有柔性，其伸长或者体积膨胀时较为缓慢，因此保证了上压盘组件施力的缓慢性和均匀性。

Description

一种键合设备
技术领域
本发明涉及半导体领域，特别涉及一种键合设备。
背景技术
晶圆键合技术可以将不同材料的晶圆结合在一起，常用的键合技术有：硅-硅直接键合、硅-玻璃直接键合、金属扩散键合、聚合物粘接键合等，该技术已经应用于多个半导体领域，是未来半导体行业发展的重要技术之一。根据不同的应用领域，晶圆键合的工艺参数都不相同，但是基本原理相似，主要包括抽真空、升温、施加压力、降温和破真空等工艺。通常情况下一套完整的晶圆键合工艺主要由两类设备组成：对准设备和键合设备。对准设备能够将两片晶圆根据对准标记对准，***隔离片，固定两片晶圆，一般使用对准设备将一对晶圆对准和固定需要5-8分钟；键合设备能够通过抽真空、抽隔离片、升温、施加压力、降温和破真空将不同材料的晶圆或硅片结合在一起，键合设备键合一对晶圆或者硅片需要45-90分钟。
随着晶圆键合技术在微机电***(MEMS)制造、微光电***，特别是CMOS图像传感器制造、以及新兴的三维芯片制造技术，如硅穿孔(TSV)技术中的广泛应用，键合技术对晶圆键合设备的性能不断提出更高的要求。
如目前现有的键合加压方式分两种，一种为刚性加压，这种方式是动力源直接将压力通过主轴传递至压盘，再由压盘传递至硅片，采用这种方式需要具有足够刚性的压盘，否则易造成压盘中心与压盘周边的压力不一致。另一种为整体柔性加压，该结构为：驱动装置与上压盘组件之间使用波纹管连接，在驱动装置通过波纹管向上压盘组件施压时，在上压盘组件紧贴硅片表面后，波纹管逐渐收缩，逐渐形成刚性的管道，并向上压盘组件施加逐渐增大的压力，达到缓慢施压的效果。采用此种方式键合时，当波纹管长度较大时，真空腔体抽真空后，波纹管内外气压不一致，波纹管长时间受到大气压力较易出现破裂。此外，一旦波纹管内冲入大压力的气体时，波纹管管体的强度较小，因此越容易发生破裂。
因此针对上述问题，有必要对现有的键合设备进行改良，避免出现上述问题。
发明内容
为解决上述问题，本发明提出了一种键合设备，使上压盘组件与传动装置通过柔性压盘连接，所述柔性压盘为可伸缩结构，使得上压盘组件能够对键合对象均匀加压。
为达到上述目的，本发明提供一种键合设备，从上至下依次包括
一驱动装置；
一传动装置，与所述驱动装置固接；
一上压盘组件，与所述传动装置连接；
一下压盘组件，与所述上压盘组件配合，用于键合放置于所述上压盘组件与所述下压盘组件之间的键合对象；
所述上压盘组件和所述下压盘组件放置于真空腔体内；
所述上压盘组件与所述传动装置通过柔性压盘连接，所述柔性压盘为可伸缩结构，所述柔性压盘使得所述上压盘组件对所述键合对象均匀加压。
作为优选，所述柔性压盘与所述传动装置之间连接有止转机构，阻止所述上压盘组件相对于所述传动装置围绕垂直方向旋转。
作为优选，所述柔性压盘从上至下包括一上板和一下板，所述上板与所述下板之间通过伸缩装置连接。
作为优选，所述伸缩装置为下波纹管，所述下波纹管一端连接所述上板，另一端与所述下板连接。
作为优选，所述上板与所述下板之间还设置有第一伸缩装置锁定机构，用于限制所述第一伸缩装置的伸长与缩短。
作为优选，所述传动装置包括固定在所述柔性压盘顶部的主轴，所述主轴从所述真空腔体内延伸至所述真空腔体外并与所述驱动装置固接。
作为优选，所述主轴通过推力关节轴承固定在所述柔性压盘顶部。
作为优选，所述真空腔体具有顶部为上腔板，底部为下腔板，所述主轴从所述真空腔体内部穿过所述上腔板延伸至所述真空腔体外部。
作为优选，所述上腔板上设置有导向轴，所述导向轴围绕所述主轴均匀分布，所述主轴顶部具有直径大于所述主轴直径的上法兰板，所述导向轴与所述上法兰板滑动连接，使得所述主轴可沿着所述导向轴上下运动。
作为优选，所述上法兰板上具有与所述导向轴对应的圆孔，所述导向轴位于所述圆孔内，所述圆孔与所述导向轴之间为间隙配合。
作为优选，所述主轴具有深孔，所述主轴通过梯形丝杆连接，所述梯形丝杆位于所述深孔内，所述梯形丝杆与所述深孔之间为间隙配合。
作为优选，所述上法兰板的端面上固接有丝杆螺母，所述丝杆螺母具有与所述梯形丝杆配合的内螺纹，所述丝杆螺母通过螺纹配合固定在所述梯形丝杆上。
作为优选，所述上腔板上围绕所述主轴设置有下法兰板，所述传动装置中还安装有上波纹管，所述上波纹管一端固定在所述上法兰板上，另一端固定在所述下法兰板上，所述上波纹管的半径小于所述导向轴与所述主轴的轴线之间的距离。
作为优选，所述驱动装置与所述丝杆螺母之间的所述梯形丝杆上套有止推轴承。
作为优选，所述驱动装置为电机。
与现有技术相比，本发明的有益效果是：本发明提供一种键合设
备，从上至下依次包括
一驱动装置；
一传动装置，与所述驱动装置固接；
一上压盘组件，与所述传动装置连接；
一下压盘组件，与所述上压盘组件配合，用于键合放置于所述上压盘组件与所述下压盘组件之间的键合对象；
所述上压盘组件和所述下压盘组件放置于真空腔体内；
所述上压盘组件与所述传动装置通过柔性压盘连接，所述柔性压盘为可伸缩结构，所述柔性压盘使得所述上压盘组件对所述键合对象均匀加压。
本发明通过在上压盘组件与传动装置之间设置柔性压盘，上压盘组件的柔性压盘位于真空腔体内部，由于柔性压盘为可伸缩结构，当柔性压盘伸长或者膨胀体积增大时，柔性压盘给予与其连接的上压盘组件向下的压力，从而使得上压盘组件缓慢向下移动，直至上压盘组件与下压盘组件皆均匀紧贴键合对象后，柔性压盘继续给予上压盘组件向下的压力，这样使得上压盘组件能够对键合对象均匀施压，且由于柔性压盘具有柔性，其伸长或者体积膨胀时较为缓慢，因此保证了上压盘组件施力的缓慢性和均匀性。
附图说明
图1为本发明提供的键和设备的剖面图；
图中：1-电机、2-止推轴承、3-梯形丝杠、4-主轴、41-上法兰板、42-深孔、43-圆孔、5-上腔板、51-主轴孔、52-下法兰板、6-真空腔体、7-下压盘组件、8-下腔板、9-上压盘组件、10-下波纹管、11-波纹管锁定机构、12-推力关节轴承、13-止转机构、14-导向轴、15-上波纹管、16-丝杠螺母、17-上板、18-下板。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
请参照图1，本发明提供一种键合设备，从上至下依次包括
一电机1，作为驱动键合的动力源。
一传动装置，与电机1固接，由电机1驱动，并将电机1的动力向下传递至与其连接的部件上。
一真空腔体6，由腔壁包裹而成，位于上部的腔壁为上腔板5，位于底部的腔壁为下腔板8，一般地，真空腔体6与真空泵连接，在键合时的加压过程中，需要将真空腔体6内部形成真空状态，防止在键合硅片或者晶圆时，硅片与晶圆之间的空气在键合后形成气泡，影响键合质量。
在真空腔体6内，用于键合硅片或者晶圆的主要为上压盘组件9和下压盘组件7，硅片或者晶圆放置于上压盘组件9和下压盘组件7之间，上压盘组件9位于上部，下压盘组件7位于下部，上压盘组件9通过一柔性压盘与传动装置连接。
具体地，柔性压盘从上至下包括上板17和下板18，上板17和下板18的直径皆等于或者略大于上压盘组件9的直径，上压盘组件9与下板18接触，在施压过程中，由于下板18的直径大于或者等于上压盘组件9的直径，从而增大上压盘组件9的受力面积，避免出现上压盘组件9上表面受力不均匀的现象。
上板17与下板18可以为方形或者圆形，本实施例中两者皆为圆形。上板17和下板18之间通过下波纹管10连接，即下波纹管10一端与上板17连接，另一端与下板18连接，也就是说上板17和下板18的圆周通过下波纹管10连接，在下波纹管10原本处于收缩状态，下波纹管10内设置有通气口(未图示)，通过通气口向下波纹管10内充入气体，则下波纹管10由于内部气压较大逐渐伸长膨胀，当上板17向上运动时，受到传动装置向下的力，使得上板17的位置固定不动，则下波纹管10中仅有下板18向下运动来形成下波纹管10的伸长，由于该种伸长与充气形成的，，因此下板18在给上压盘组件9施压时，施压过程也较为缓慢。
另一方面，当上板17与下板18接触的一面具有均匀分布的压力柱171，这些压力柱171之间形成了较为均匀的空间，当下波纹管10内充入空气时，每个均匀的空间内膨胀的空气皆使得下板18向下移动，这样下板18通过上压盘组件9将压力传递给硅片或者晶圆时，给予硅片或者晶圆的压力较为均匀。
较佳地，在上板17和下板18之间设置了波纹管锁定机构11，该波纹管锁定机构11为在若干个围绕上板17和下板18均匀分布地具有相同长度和弹性参数的弹簧，每个弹簧一端与上板17侧面的挂钩连接，另一端与下板18侧面对应处的挂钩连接，其作用为保证在工作过程中上板17不会发生相对于下板18的转动，且保证柔性压盘在下降的过程中不会因为真空腔体6内抽真空后，被自身内的大气压膨胀导致自身拉长而损坏。当下压盘组件7贴住键合对象后，弹簧的作用消失。本发明中使用的传动装置主要通过一主轴4将电机1的动力传递至柔性压盘上，主轴4与柔性压盘的上板之间通过一推力关节轴承12连接，该推力关节轴承12与上板17固接，推力关节轴承12套在主轴4的一端。
此外，在主轴4与上板之间设置了止转机构13，该止转机构13为若干根金属条或者折弯的金属条，每根金属条的一端连至主轴4的一端，另一端固定在上板17上，若干根金属条围绕主轴4均匀分布。若产生了使上板17围绕主轴4旋转的力，则在转动时，由于金属条与主轴4和上板17皆固定连接，则使得上板17无法旋转，因此也避免了上板17在旋转时对键合施压过程中造成的压力不均匀的问题。
主轴4从真空腔体6内部延伸至真空腔体6外部，上腔板5上具有主轴孔51，也就是说主轴4从上腔板5下部通过主轴孔51延伸至上部。
主轴4中央为深孔42，在深孔42的顶端具有上法兰板41，上法兰板41上具有圆孔43，与圆孔43相对应之处具有若干根围绕主轴孔51均匀分布的导向轴14，导向轴14从上腔板5延伸至圆孔43上方，导向轴14与圆孔43为间隙配合，也就是说上法兰板41可以沿着导向轴14上下滑动。
为了防止当真空腔体6内为真空环境时，空气从主轴孔51进入真空腔体6，则设置上波纹管15，上波纹管15一端与上法兰板41连接，另一端与上腔板5上的下法兰板52连接，下法兰板52围绕主轴孔51固定，上波纹管15的内径小于导向轴14与主轴4的轴线之间的距离，也就是说主轴4上除了上法兰板41，其余皆被包裹在上波纹管15中，上波纹管15与真空腔体6之间形成了密闭环境，使得真空腔体6具有良好的气密性。
主轴4上上法兰板41靠近电机1的端面上固定连接有丝杆螺母16，丝杆螺母16的上下运动带动了主轴4的上下运动。而丝杆螺母16通过梯形丝杆3带动，梯形丝杆3下端进入主轴4的深孔42内，梯形丝杆3具有外螺纹，丝杆螺母16具有与该外螺纹配合的内螺纹，即丝杆螺母16通过螺纹连接固定在梯形丝杆3上，而梯形丝杆3与电机1固定连接，则当电机1给予梯形丝杆3上下运动的动力时，梯形丝杆3带动丝杆螺母16上下运动，而丝杆螺母16的上下运动带动了主轴4的上下运动，在键合开始时，主轴4向下运动使得柔性压盘从初始位置向下运动到预键合位置，然后开始对柔性压盘充气，进行键合；在键合完毕后，柔性压盘内破真空，主轴4向上运动带动柔性压盘向上移动至初始位置。
较佳地，在丝杆螺母16与电机1之间具有止推轴承2，该止推轴承2的外径大于丝杆螺母16的内径，这样给予丝杆螺母16向上运动限位，防止丝杆螺母16向上运动的行程过大超过了上波纹管15的长度极限，造成上波纹管15的损坏或者破坏了上波纹管15与下法兰板52的连接。
使用本发明提供的键合设备的键合流程为：
当上压盘组件9位于初始位置时，对真空腔体6内抽真空，同时电机1驱动梯形丝杆3转动，梯形丝杆3将动力依次通过丝杆螺母16、主轴4和柔性压盘到达上压盘组件9，使上压盘组件9下降至预键合位置(即上压盘组件9下表面与硅片或者晶圆的间距为3mm～5mm)。等待上压盘组件9和下压盘组件7的加热盘温度达到键合工艺的要求，然后电机1继续驱动上上压盘组件9下降，当上压盘组件9的下表面下降至完全贴住下压盘组件7的上表面时，下压盘组件7内的压力传感器感受到设定的压力后向电机1反馈，电机1停止工作。
此时下波纹管10内通入30bar或以下的气压，此时下波纹管10由于内部气压逐渐增大开始膨胀，上板17向上移动，从而带动主轴4向上移动，但由于上部丝杆螺母16受到止推轴承2的阻挡，则使得主轴4无法向上移动，从而使得上板17位置保持固定，因此下波纹管10的伸长通过下板18向下移动来完成，下板18给予上压盘组件9向下的力，使得上压盘组件9与硅片或者晶圆接触后，继续给予下压盘组件7和硅片或者晶圆向下的力。，此外止转机构13能够保证下波纹管10在下降的过程中不会围绕主轴4旋转，进而避免硅片在键合时不会因为下波纹管10围绕主轴4旋转而导致位置发生改变。在键合过程结束后，下波纹管10内破真空，上压盘组件9给予硅片的压力逐渐减缓直至消失，电机1驱动梯形丝杆3转动带动上压盘组件9返回初始位置，最后将键合完成的硅片或者晶圆取出。
综上所述，本发明提供的键合设备，通过在上压盘组件9与传动装置之间设置柔性压盘，上压盘组件9的柔性压盘位于真空腔体6内部，由于柔性压盘为可伸缩结构，当柔性压盘伸长或者膨胀体积增大时，柔性压盘给予与其连接的上压盘组件9向下的压力，从而使得上压盘组件9缓慢向下移动，直至上压盘组件9与下压盘组件7皆均匀紧贴键合对象后，柔性压盘继续给予上压盘组件9向下的压力，这样使得上压盘组件9能够对键合对象均匀施压，且由于柔性压盘具有柔性，其伸长或者体积膨胀时较为缓慢，因此保证了上压盘组件9施力的缓慢性和均匀性。
本发明对上述实施例进行了描述，但本发明不仅限于上述实施例。显然本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包括这些改动和变型在内。

Claims (10)

1.一种键合设备，从上至下依次包括
一驱动装置；
一传动装置，与所述驱动装置固接；
一上压盘组件，与所述传动装置连接；
一下压盘组件，与所述上压盘组件配合，用于放置于所述上压盘组件与所述下压盘组件之间的键合对象；
所述上压盘组件和所述下压盘组件放置于真空腔体内；
其特征在于，所述上压盘组件与所述传动装置通过柔性压盘连接，所述柔性压盘为可伸缩结构，所述柔性压盘使得所述上压盘组件对所述键合对象均匀施压；
所述柔性压盘从上至下包括一上板和一下板，所述上板与所述下板之间通过一下波纹管连接，所述下波纹管的一端连接所述上板，另一端与所述下板连接；所述上板与所述下板之间还设置有波纹管锁定机构，用于限制所述下波纹管的伸长与缩短；
所述传动装置包括固定在所述柔性压盘顶部的主轴，所述主轴从所述真空腔体内延伸至所述真空腔体外并与所述驱动装置固接；所述真空腔体具有顶部为上腔板，所述上腔板上设置有导向轴，所述导向轴围绕所述主轴均匀分布，所述主轴顶部具有直径大于所述主轴直径的上法兰板，所述导向轴与所述法兰板滑动连接，使得所述主轴可沿着所述导向轴上下运动。
2.如权利要求1所述的键合设备，其特征在于，所述柔性压盘与所述传动装置之间连接有止转机构，阻止所述上压盘组件相对于所述传动装置围绕垂直方向旋转。
3.如权利要求1所述的键合设备，其特征在于，所述主轴通过推力关节轴承固定在所述柔性压盘顶部。
4.如权利要求1所述的键合设备，其特征在于，所述真空腔体具有底部为下腔板，所述主轴从所述真空腔体内部穿过所述上腔板并延伸至所述真空腔体外部。
5.如权利要求1所述的键合设备，其特征在于，所述上法兰板上具有与所述导向轴对应的圆孔，所述导向轴位于所述圆孔内，所述圆孔与所述导向轴之间为间隙配合。
6.如权利要求1所述的键合设备，其特征在于，所述主轴具有深孔，所述主轴通过梯形丝杆连接，所述梯形丝杆位于所述深孔内，所述梯形丝杆与所述深孔之间间隙配合。
7.如权利要求6所述的键合设备，其特征在于，所述上法兰板的端面上固接有丝杆螺母，所述丝杆螺母具有与所述梯形丝杆配合的内螺纹，所述丝杆螺母通过螺纹配合固定在所述梯形丝杆上。
8.如权利要求7所述的键合设备，其特征在于，所述上腔板上围绕所述主轴设置有下法兰板，所述传动装置中还安装有上波纹管，所述上波纹管一端固定在所述上法兰板上，另一端固定在所述下法兰板上，所述上波纹管的半径小于所述导向轴与所述主轴的轴线之间的距离。
9.如权利要求7所述的键合设备，其特征在于，所述驱动装置与所述丝杆螺母之间的所述梯形丝杆上套有止推轴承。
10.如权利要求1所述的键合设备，其特征在于，所述驱动装置为电机。
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