CN107305306A - 显示装置 - Google Patents
显示装置 Download PDFInfo
- Publication number
- CN107305306A CN107305306A CN201710260523.3A CN201710260523A CN107305306A CN 107305306 A CN107305306 A CN 107305306A CN 201710260523 A CN201710260523 A CN 201710260523A CN 107305306 A CN107305306 A CN 107305306A
- Authority
- CN
- China
- Prior art keywords
- wire
- insulating barrier
- layer
- transistor
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000008054 signal transmission Effects 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000012212 insulator Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- 239000004020 conductor Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- 239000011810 insulating material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 4
- 230000008859 change Effects 0.000 description 4
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- 238000005530 etching Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000007600 charging Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- -1 SiH4Or NH3 Chemical class 0.000 description 1
- UOBPHQJGWSVXFS-UHFFFAOYSA-N [O].[F] Chemical compound [O].[F] UOBPHQJGWSVXFS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013499 data model Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 201000006549 dyspepsia Diseases 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
本发明涉及一种显示装置,该显示装置包括:基底;栅极驱动器,设置在基底上并且包括多个级;时钟信号线,设置在基底上并且将时钟信号传输至所述级中的至少一个级;晶体管,设置在基底上;以及遮光层,设置在基底与晶体管之间并且与晶体管重叠。时钟信号线包括第一导线和与第一导线重叠的第二导线,并且第一导线与遮光层设置在同一层。
Description
相关申请的交叉引用
本申请要求2016年4月20日提交的韩国专利申请第10-2016-0048117号的优选权和权益,在此为了所有目的通过引用将该韩国专利申请并入本文,如同在本文中充分地阐述一样。
技术领域
本发明通常涉及一种显示装置,并且更具体地,涉及一种具有邻近的时钟信号线的显示装置。
背景技术讨论
诸如液晶显示器和有机发光装置的显示装置包括驱动装置,诸如数据驱动器和栅极驱动器。栅极驱动器可与显示面板集成。当栅极驱动器与显示面板集成时,不需要制造额外的栅极驱动芯片,因此减低了制造成本,并且防止了在安装栅极驱动芯片时可能出现的缺陷。
集成到显示面板的栅极驱动器包括用于生成包括栅极导通电压和栅极关断电压的栅极信号的多个级,并且可根据输入到相应级的时钟信号和进位信号生成具有各种类型的波形的栅极信号。
时钟信号通过时钟信号线被传输至栅极驱动器的级,并且可能因时钟信号线之间或者与时钟信号线相邻的信号线之间的寄生电容而生成时钟信号的RC(电阻-电容)延迟。
在此背景部分公开的上述信息仅用于增强对本发明构思的背景的理解,并且因而其可能包含那些不构成该国相关领域普通技术人员已知的现有技术的信息。
发明内容
申请人发现,液晶面板上时钟信号的延迟可能降低像素的充电率。随着液晶面板的分辨率或尺寸变大,时钟信号的延迟变为充电率降低的主要因素。当充电率降低时,可能产生图像质量缺陷,诸如混色或串扰。
根据本发明的原理构造的显示装置通过减小一个或多个时钟信号线的电阻而改善显示质量。时钟信号线电阻的减小又引起时钟信号线之间或者与时钟信号线相邻的信号线之间的寄生电容的降低。而且,寄生电容的降低减少或消除了时钟信号中的任意不期望的延迟,使得能更快速地输送时钟信号。更快地输送时钟信号改善了在显示器上形成图像的响应时间。
根据本发明的示例性实施例,时钟信号线可通过使用形成在显示区域中的导电层来提供为双层,以因此减小时钟信号线的电阻并且改善时钟信号的RC延迟。
根据本发明的原理,通过经由减小时钟信号线的电阻而降低时钟信号的延迟,可改善充电率的裕量。当充电率的裕量增加时,像素区域的数据线或栅极线的宽度可减小,由此改善透光率。根据本发明的双层结构,可在减小时钟信号线的宽度的同时维持或减小时钟信号线的电阻,因此除了降低RC延迟之外,还可减少时钟信号线所占据的显示面板的***区域,由此减少显示装置的边框宽度。
其他方面将在随后的详细描述中阐述,并且将部分地因本公开而显而易见,或者可通过本发明构思的实践而习得。
根据本发明的一方面,一种显示装置包括:基底;栅极驱动器,设置在基底上并且包括多个级;时钟信号线,设置在基底上并且将时钟信号传输至所述级中的至少一个级;晶体管,设置在基底上;以及遮光层,设置在基底与晶体管之间并且与晶体管重叠。时钟信号线包括第一导线和与第一导线重叠的第二导线,并且第一导线与遮光层设置在同一层。
时钟信号线可通过连接器连接至至少一个级,并且第一导线可通过连接器电连接至第二导线。
第二导线可包括与第一导线重叠的切口,并且连接器可通过切口连接至第一导线。
显示装置可进一步包括:设置在第一导线与第二导线之间的第一绝缘层,以及设置在第一导线和第二导线上的第二绝缘层。连接器可通过形成在第二绝缘层中的第一接触孔连接至第二导线,并且可通过形成在第一绝缘层和第二绝缘层中的第二接触孔连接至第一导线。
显示装置可进一步包括:设置在第一绝缘层与第二导线之间的绝缘体。绝缘体可具有与第二导线的平坦形状大致相同的平坦形状。
第一导线可包括第一开口,并且第二导线可包括与第一开口重叠的第二开口。
晶体管可包括栅电极、源电极、漏电极和半导体,并且第二导线可与晶体管的栅电极设置在同一层。
连接器可与晶体管的源电极和漏电极设置在同一层。
半导体可设置在遮光层与栅电极之间。
源电极可电连接至遮光层。
显示装置可进一步包括:连接至晶体管的像素电极,其中连接器可与像素电极设置在同一层。
根据本发明的另一方面,一种显示装置的制造方法,包括以下步骤:在基底上沉积导电材料并且图案化沉积层,以形成遮光层和时钟信号线的第一导线;在遮光层和第一导线上沉积绝缘材料,以形成第一绝缘层;在第一绝缘层上沉积半导体材料并且图案化沉积的半导体材料,以形成与遮光层重叠的半导体层;在半导体层上沉积绝缘材料,以形成第二绝缘层;在第二绝缘层上沉积导电材料,以形成栅极导电层;并且在栅极导电层上形成光敏薄膜图案;用光敏薄膜图案作为掩模蚀刻栅极导电层以形成栅电极和时钟信号线的第二导线;以及蚀刻第二绝缘层,以形成分别与栅电极和第二导线重叠的第三绝缘层和第四绝缘层。
该方法可进一步包括:在栅电极和时钟信号线上沉积绝缘材料,以形成第五绝缘层;并且在第一绝缘层和第五绝缘层中形成第一接触孔和第二接触孔;并且沉积导电材料以形成数据导电层;并且蚀刻数据导电层,以形成与半导体层的源极区和遮光层连接的源电极、与半导体的漏极区连接的漏电极以及与第一导线和第二导线连接的连接器。
形成第二导线的步骤可包括:在第二导线中形成切口,其中切口与第一导线重叠。
在第一绝缘层和第五绝缘层中形成第一接触孔和第二接触孔的步骤可包括:形成第一接触孔,第一接触孔通过第五绝缘层暴露第二导线;以及形成第二接触孔,第二接触孔在与第一绝缘层和第五绝缘层中的第二导线的切口重叠的区域中暴露第一导线。
沉积导电材料以形成连接器的步骤可包括:将连接器通过第一接触孔连接至第二导线,并且可包括:将连接器通过第二接触孔连接至第一导线。
该方法可进一步包括:在形成半导体层之后,使半导体层的一部分充当导体,以形成源极区和漏极区。
用光敏薄膜图案作为掩模蚀刻栅极导电层以形成第二导线的步骤可包括:形成与第一导线重叠的第二导线。
根据本发明的另一方面,一种显示装置,包括:基底;栅极驱动器,设置在基底上并且包括多个级;时钟信号线,设置在基底上并且将时钟信号传输至所述级中的至少一个级;以及晶体管,设置在基底上。时钟信号线包括:第一导线和与第一导线重叠的第二导线。
显示装置可进一步包括:遮光层,设置在基底与晶体管之间并且与晶体管重叠;并且第一导线可与遮光层设置在同一层。
前述一般描述以及下述详细描述是示例性的和说明性的,并且旨在提供对本发明的主题的进一步解释。
附图说明
所包含的附图提供对本发明构思的进一步理解,并且并入到说明书中且构成说明书的一部分,附图图示本发明构思的示例性实施例,并且与说明书一起用于解释本发明构思的原理。
图1是根据本发明的原理构造的显示装置的俯视示意图。
图2是图1的区域A的放大视图。
图3是图2的时钟信号线的第一导线的一部分的分解顶视图。
图4是图2的时钟信号线的第二导线的一部分的分解顶视图。
图5是沿图2的V-V’线截取的剖视图,图示根据本发明的原理构造的栅极驱动器的第一实施例。
图6是沿图2的VI-VI’线截取的栅极驱动器的第一实施例的剖视图。
图7是沿图2的V-V’线截取的剖视图,图示根据本发明的原理构造的栅极驱动器的第二实施例。
图8是根据本发明的原理构造的栅极驱动器的晶体管的剖视图。
图9至图15是根据本发明的原理的用于制造显示装置的示例性方法的各步骤中各连续级的分解剖视图。
图16是根据本发明的原理构造的显示装置的像素区域的分解俯视图。
图17是沿图16的XVII-XVII’线截取的像素区域的剖视图。
具体实施方式
在以下描述中,为了解释的目的,阐述了大量具体细节,从而提供对各种示例性实施例的深入理解。然而很明显,各种示例性实施例可在不具有这些具体细节的情况下实施,或者可通过一个或多个等同设置实施。在其他示例中,以框图形式示出了众所周知的结构和装置,从而避免使各种示例性实施例不必要地难以理解。
在附图中,为了清楚和描述的目的,各层、膜、面板、区域等的尺寸和相对尺寸可被放大。而且,相同的附图标记表示相同的元件。
当元件或层被称为位于另一元件或层“上”、“连接到”或“联接到”另一元件或层时,其可直接位于另一元件或层上、直接连接到或直接联接到另一元件或层,或者可能存在中间元件或中间层。然而,当元件或层被称为“直接在”另一元件或层“上”、“直接连接到”或“直接联接到”另一元件或层时,不存在中间元件或中间层。为了此公开的目的,“X、Y和Z中的至少一个”以及“选自由X、Y和Z构成的组中的至少一个”可被解读为仅有X、仅有Y、仅有Z,或者X、Y和Z中两个或多个的任意组合,比如XYZ、XYY、YZ和ZZ。贯穿全文,相同的附图标记指代相同的元件。如本文所使用的,术语“和/或”包括相关联地列出的项目中的一个或多个中的任意或者所有组合。
虽然本文可使用术语“第一”、“第二”等来描述各种元件、部件、区域、层和/或部分,但这些元件、部件、区域、层和/或部分不应受到这些术语的限制。这些术语用于将一个元件、部件、区域、层和/或部分与另一个元件、部件、区域、层和/或部分区分开来。因此,在不脱离本公开的教导的情况下,下面讨论的第一元件、部件、区域、层和/或部分可称作第二元件、部件、区域、层和/或部分。
为了描述的目的,本文使用空间相对术语,诸如“之下”、“下方”、“下部”、“上方”、“上部”等,并且由此,用来描述如附图中所图示的一个元件或特征相对于另一(些)元件或特征的关系。除了附图中描绘的方位之外,空间相对术语旨在包含使用中、运行中和/或制造中的设备的不同方位。例如,如果附图中的设备被翻转,则被描述为位于其他元件或特征“下方”或“之下”的元件会定位为位于其他元件或特征“上方”。因此,示例性术语“下方”可包含“上方”的方位和“下方”的方位两者。而且,设备还可具有其他方位(例如,旋转90度或者处于其他方位),并且可由此相应地解读本文使用的空间相对描述符。
本文使用的术语是为了描述特定实施例的目的,并且不旨在限制。如本文所使用的,单数形式“一”和“该”旨在也包括复数形式,除非在上下文中另外清楚地指明。而且,当用于本说明书中时,术语“包括”和/或“包含”指定了所讨论的特征、整数、步骤、操作、元件、部件和/或其的组的存在,但不排除一个或多个其他特征、整数、步骤、操作、元件、部件和/或其的组的存在或添加。
本文参照剖视图描述各种示例性实施例,这些剖视图是理想化的示例性实施例和/或中间结构的示意性的图示。照此,因例如制造技术和/或公差而产生的图示的形状的变化是可预料到的。因此,本文公开的示例性实施例不应被解释为受限于特定图示的区域形状,而是包括因例如制造而产生的形状上的偏离。例如,图示为三角形的注入区域通常将具有圆的或弯曲的特征,和/或在其边缘处具有注入浓度的梯度,而不是从注入的区域到非注入的区域的二元变化。同样地,通过注入形成的埋设区域可造成埋设区域与进行注入的表面之间的区域中的一些注入。因此,附图中图示的区域事实上是示意性的,并且,其形状不旨在图示装置区域的实际形状并且不旨在限制。
除非另外定义,本文使用的所有术语(包括技术和科学术语)的含义与本公开所属领域中普通技术人员通常理解的含义相同。除非本文明确定义,否则诸如在通用词典中定义的那些术语应被解释为具有与相关领域上下文中的含义相一致的含义,并且不应以理想化或过度正式的意义对其进行解释。
下面参照附图详细描述根据本发明的一个或多个示例性实施例构造的显示装置。
参照图1,显示装置包括显示面板300、数据驱动器460、栅极驱动器500和信号控制器600。
显示面板300包括:显示区域DA和***区域PA,显示区域DA用于显示图像,***区域PA围绕显示区域DA提供并且包括用于将栅极信号施加至栅极线G1-Gn的栅极驱动器500。
多个像素PX设置在形成于显示区域DA中的矩阵中。如果显示器是液晶显示器,则像素PX包括薄膜晶体管、液晶电容和存储电容。液晶电容包括液晶层,并且其可在微腔中为每个或多个像素区域充电。如果显示器是有机发光装置,则像素PX包括开关晶体管、驱动晶体管、存储电容和发光装置。栅极线G1-Gn和数据线D1-Dm设置在显示区域DA中。栅极线G1-Gn和数据线D1-Dm连接至像素PX,并且它们在彼此绝缘的同时可彼此交叉。
数据驱动器460可作为集成电路芯片安装在附接至显示面板300的焊盘部分的柔性印刷电路板(FPCB)450上,并且可连接至显示面板300。显示区域DA的数据线D1-Dm可从数据驱动器460接收数据电压。与附图中示出的实施例相反,数据驱动器460可作为集成电路芯片安装在***区域PA中。数据驱动器460在图1中示出为在显示面板300的上侧,但其可提供在显示面板300的下侧。
栅极驱动器500集成在显示面板300的***区域PA中。图1中,栅极驱动器500提供在显示面板300的左***区域中,但其可提供在右***区域中,或者提供在左***区域和右***区域两者中。
栅极驱动器500和数据驱动器460由信号控制器600控制。印刷电路板PCB400可提供在FPCB 450外部,以将信号从信号控制器600传输至数据驱动器460和栅极驱动器500。通过信号控制器600提供至栅极驱动器500的信号可包括诸如垂直起始信号或时钟信号的信号,以及用于提供特定低水平电压的信号。
栅极驱动器500接收垂直起始信号、时钟信号和对应于栅极关断电压的低电压,生成栅极信号(栅极导通电压和栅极关断电压),并且将栅极信号施加至栅极线G1-Gn。栅极驱动器500包括用于通过使用上述信号生成并输出栅极电压的各个级(ST1-STn)以及用于将信号传输至各个级ST1-STn的信号线SL。
各个级ST1-STn中的每一级可包括晶体管和至少一个电容。晶体管和电容可在用于形成包括在显示区域DA的像素PX中的晶体管的过程期间形成。栅极线G1-Gn连接至各个级ST1-STn的输出端,并且栅极线G1-Gn从各个级ST1-STn接收栅极信号。
信号线SL可比各个级ST1-STn更远离显示区域DA定位。虽然图1示出了单个线,但信号线SL可组成在数量上与施加至栅极驱动器500的信号的数量相同的多条信号线,或者可组成比信号的数量更少或更多数量的线。信号线SL包括用于传输时钟信号的多条时钟信号线。
施加至栅极驱动器500的垂直起始信号、时钟信号和低电压通过提供在栅极驱动器500附近的FPCB 450施加至栅极驱动器500。信号可通过PCB 400从外部或者信号控制器600传输至FPCB 450。
前面的描述涉及包括显示面板300的显示装置的配置。以下描述涉及栅极驱动器500和时钟信号线。
图2对应于图1的显示面板300的区域A,并且示出了形成或提供在基底110上的组成元件。例如,显示面板300可包括面向基底110的对置基底,并且可在对置基底上形成遮光构件。
参照图2以及图1,示出图1的栅极驱动器500的若干级ST1-ST5以及与其连接的时钟信号线CSL。各个级ST1-ST5与图1一样被简单地示出为框,并且在图2中更详细地示出了时钟信号线CSL。除了时钟信号线CSL之外,一些信号线也连接至栅极驱动器500,但为了清楚的目的而未在图2中示出。
时钟信号线CSL包括第一时钟信号线至第六时钟信号线C1-C6,它们彼此平行延伸。第一时钟信号线C1最远离各个级ST1-STn,并且第六时钟信号线C6最靠近各个级ST1-STn。第一时钟信号线至第六时钟信号线C1-C6的延伸方向可对应于各个级ST1-STn的布置方向(即,列方向),并且可对应于数据线D1-Dm的延伸方向。第一时钟信号线至第六时钟信号线C1-C6可以以预定间隔接收顺序地相位延迟的时钟信号,该预定间隔诸如可被称为1H的一个水平周期。各个级ST1-STn可连接至第一时钟信号线至第六时钟信号线C1-C6,以接收用六个连续级作为重复周期的时钟信号。第一时钟信号线至第六时钟信号线C1-C6连接至对应于连接器179的各个级ST1-STn。
图2示出6个时钟信号线CSL,但时钟信号线CSL的数量可多于6个或少于6个。例如,时钟信号线CSL的数量可以是2个、4个、6个、8个或者甚至更多个。时钟信号线CSL的数量可对应于使用中的时钟信号的数量,并且各个级ST1-STn可连接至时钟信号线CSL,并且将数量上对应于时钟信号数量的连续级用作重复周期。
参照图2至图6,每个时钟信号线CSL具有双层结构,其中时钟信号线CSL在显示面板300的厚度方向上彼此重叠,其间具有绝缘层111和绝缘体143,并且因此彼此物理地分离。也就是说,如图5中最佳示出的,时钟信号线CSL包括第一导线113以及与第一导线113重叠的第二导线123。虽然与第二导线123物理地分离,但第一导线113通过连接器179电连接至第二导线123。第一导线113可电连接至第二导线123,所以它们可一起形成用于传输同一时钟信号的单个时钟信号线CSL。
第一导线113包括沿第一导线113的中心在纵向(第一导线113的最长尺寸的延伸方向)上提供的狭缝13。狭缝13不是连续提供的,因为如果狭缝13沿着第一导线113的长度是连续的,则第一导线113会相对于狭缝13被完全分隔成右部部分和左部部分。第二导线123类似地包括沿着第二导线123的中心在纵向(第二导线123的最长尺寸的延伸方向)上不连续地提供的狭缝23。狭缝13和狭缝23总体上彼此重叠。从另一个角度看,第一导线113和第二导线123可被描述为包括两个被狭缝13和狭缝23的宽度分隔开并且彼此平行延伸的半线,并且两个“半线”在多个点处彼此连接以限定狭缝13和狭缝23的长度。
当显示面板300包括对置基底时,基底110和对置基底可借助于密封胶结合,并且密封胶可提供在与时钟信号线CSL重叠的区域中。激光束可照射该密封胶,以熔融或固化该密封胶,并且当激光束在基底110下方照射时,激光束中的一些被时钟信号线CSL挡住。然而,激光束可通过形成在第一导线113和第二导线123中的狭缝13和狭缝23穿过时钟信号线CSL,从而增加到达密封胶的激光束的量。在其他实施例中,第一导线113和第二导线123可能不包括狭缝13和狭缝23。
第一导线113和第二导线123可完全彼此重叠,并且在第二导线123中形成切口25(见图4)。因而,在顶视图中,第一导线113的位于第二导线123的重叠切口25下方的部分不被第二导线123覆盖,并且第一导线113的、与第二导线123重叠但不与切口25重叠的另一部分可基本上被第二导线123覆盖。切口25被形成为将提供在不同层上的第一导线113和第二导线123分别连接至提供在导线113和123之上的连接器179。如所图示的,切口25可形成为使得大致到第二导线123的中心线右侧的右部部分(即,参照图4,狭缝23的右部部分)可凹入,并且与附图相反,大致到第二导线123的中心线左侧的左部部分(即,参照图4,狭缝23的左部部分)可凹入,但第二导线123上的此构造的位置或形状不限于前述示例。例如,切口25可形成在第二导线123内。
关于提供有时钟信号线CSL的区域的剖面配置,具体参照图5和图6,时钟信号线CSL的第一导线113提供在基底110上,基底110可由诸如玻璃或塑料的绝缘材料制成。第一绝缘层111提供在第一导线113上,并且绝缘体143和第二导线123提供在第一绝缘层111上。第二导线123具有与绝缘体143大致相同的平坦形状。大致相同的平坦形状意味着,在顶视图中,由彼此对应的两个组成元件占据的区域具有规则间隔的大致平行的边缘。当两个组成元件具有大致相同的平坦形状时,这可能是因为它们是通过使用一个掩模形成的。
第二绝缘层160提供在第一绝缘层111和第二导线123上。第一接触孔81形成在第二绝缘层160上的与第二导线123重叠的区域中。第二接触孔82形成在第一绝缘层111和第二绝缘层160上的与第一导线113和切口25重叠的区域中。连接器179提供在第二绝缘层160上。连接器179通过第一接触孔81连接至第二导线123,并且通过第二接触孔82连接至第一导线113。相应地,第二导线123电连接至第一导线113。连接器179连接至各个级ST1-STn中的一个级(例如,图2中的第二级ST2)。连接器179在与栅极线G1-Gn的延伸方向大致相同的方向上延伸。然而,为了补偿由时钟信号线CSL和各个级ST1-STn之间的距离导致的电阻差异,可包括弯曲部分(例如,时钟信号线C6与各个级ST1-STn之间的部分),使得与不同时钟信号线CSL连接的各连接器179的长度可大致相同。
参照图7示出的栅极驱动器的第二实施例,除了连接器179’,时钟信号线CSL的第一导线113和第二导线123对应于图5的实施例。也就是,第一导线113提供在基底110上且第一绝缘层111提供在第一导线113上,并且绝缘体143和第二导线123提供在第一绝缘层111上。第二绝缘层160提供在第二导线123上,并且第三绝缘层180提供在第二绝缘层160上。第一接触孔81形成在第二绝缘层160和第三绝缘层180上的与第二导线123重叠的区域中,并且第二接触孔82形成在第一绝缘层111、第二绝缘层160和第三绝缘层180上的与第一导线113和切口25重叠的区域中。提供在第三绝缘层180上的连接器179’通过第一接触孔81连接至第二导线123,并且通过第二接触孔82连接至第一导线113。
当与图5的第一示例性实施例相比时,图7的第二示例性实施例进一步在第二绝缘层160和连接器179’之间形成第三绝缘层180。在图5的第一示例性实施例中,连接器179可由金属制成,并且在图7的第二示例性实施例中,连接器179’可由诸如氧化铟锡(ITO)或者氧化铟锌(IZO)的透明导电氧化物制成。
通过将时钟信号线CSL形成为根据上述示例性实施例的双层,可减小时钟信号线CSL的电阻,并且由此可减少时钟信号的RC延迟。例如,液晶面板上时钟信号的延迟可降低像素的充电率。随着液晶面板的分辨率或尺寸变大,时钟信号的延迟变成充电率降低的主要因素。当充电率降低时,可能会产生图像质量缺陷,诸如混色或串扰。根据本发明的原理,通过经由减小时钟信号线CSL的电阻来减少时钟信号的延迟,可改善充电率的裕量。随着充电率的裕量的增加,像素区域的数据线或栅极线的宽度可减小,由此改善透光率。根据该双层结构,可在减小时钟信号线CSL的宽度的同时维持或减小时钟信号线CSL的电阻,因此除了减少RC延迟之外,还可减少被时钟信号线CSL占据的显示面板300的***区域PA,由此减小显示装置的边框宽度。
双层线的构造可应用于其它信号线(例如,从显示面板300的焊盘延伸的信号线SL)以及时钟信号线CSL,双层线具有提供在基底110与第一绝缘层111之间的导体并且该导体还提供在第一绝缘层111与第二绝缘层160之间。
可在用于在显示面板300上形成晶体管的过程中一起,形成时钟信号线CSL的双层结构。因而,在制造根据本发明的原理的包括具有双层结构的时钟信号线CSL的显示面板300时,不需要额外的处理阶段或额外的掩模。其原因可从下面参照图8至图15的描述而清楚明显。
参照图8描述包括在显示面板中的晶体管的堆叠结构,并且描述晶体管与上述时钟信号线CSL之间的堆叠关系。
参照图8,示出要包括在栅极驱动器500中的晶体管TR的堆叠结构。具有所图示的结构的晶体管TR还可包括在每个像素中。
晶体管TR包括半导体130、栅电极124、源电极173和漏电极175。源极区133和漏极区135可通过当栅极导通电压施加至栅电极124时,流经半导体130的沟道区131的载流子的方向以及从源电极173流向漏电极175的载流子而确定。因而,当晶体管TR工作时,在n-型晶体管中,电子从源电极173流向漏电极175,并且在p-型晶体管中,空穴从源电极173流向漏电极175。
在包括诸如玻璃或塑料的绝缘材料的基底110上提供遮光层115。遮光层115可由诸如金属的导电材料制成,并且可由单层或多层制成。遮光层115防止外部光到达半导体130,从而防止半导体130的性能劣化(退化)并且控制晶体管TR的漏电流。遮光层115包括与半导体130重叠的部分以及与半导体130不重叠的部分。参照图5至图7,时钟信号线CSL的第一导线113可与遮光层115提供在同一层上,并且可由与其相同的材料制成。
第一绝缘层111在遮光层115上提供在基底110与半导体130之间。第一绝缘层111可防止来自基底110的杂质到达半导体130,从而保护半导体130并且改善半导体130的性能特性,并且因此第一绝缘层111可因而被称为缓冲层。第一绝缘层111可包括无机绝缘材料,诸如氧化硅(SiOx)、氮化硅(SiNx)、氧化铝(Al2O3)、氧化铪(HfO3)或者氧化钇(Y2O3)。第一绝缘层111可为单层或多层。例如,当第一绝缘层111具有两层时,下层可包括氮化硅(SiNx),而上层可包括氧化硅(SiOx)。参照图5至图7,第一绝缘层111还提供在第一导线113上。
半导体130提供在第一绝缘层111上。半导体130包括源极区133、漏极区135以及它们之间的沟道区131。半导体130可包括氧化物半导体。氧化物半导体可包括诸如锌(Zn)、铟(In)、镓(Ga)、锡(Sn)或钛(Ti)的金属的氧化物,或者诸如锌(Zn)、铟(In)、镓(Ga)、锡(Sn)或钛(Ti)的金属与其氧化物的组合。例如,氧化物半导体可包括以下中的至少一种:氧化锌(ZnO)、氧化锌锡(ZTO)、氧化锌铟(ZIO)、氧化铟(InO)、氧化钛(TiO)、氧化铟镓锌(IGZO)或者氧化铟锌锡(IZTO)。源极区133和漏极区135可包括由晶体管TR的沟道区131包括的氧化物半导体材料还原的材料。可根据等离子工艺方法,通过将形成半导体130的氧化物半导体充当导体来形成源极区133和漏极区135。半导体130可包括诸如多晶硅的半导体材料。
绝缘体144提供在半导体130上。绝缘体144可为单层或多层结构。当绝缘体144为单层时,其可包括绝缘材料,诸如氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiON)、氧化铝(Al2O3)、氧化铪(HfO3)或者氧化钇(Y2O3)。当绝缘体144为多层结构时,接触半导体130的下层可包括绝缘氧化物,诸如氧化硅(SiOx)、氧化铝(Al2O3)、氧化铪(HfO3)或者氧化钇(Y2O3),从而改善沟道区131的界面特性并且防止杂质进入沟道区131,而且该下层上提供的至少一层可包括各种不同类型的绝缘材料,诸如氮化硅(SiNx)或者氧化硅(SiOx)。参照图5至图7,提供在第一绝缘层111上的绝缘体143可使用相同的材料与绝缘体144形成在同一层上。
栅电极124提供在绝缘体144上。例如,栅电极124可包括金属,诸如铜(Cu)、铝(Al)、银(Ag)、钼(Mo)、铬(Cr)、钽(Ta)或钛(Ti)。栅电极124可为单层或者可为由不同材料制成的多层结构。栅电极124具有与绝缘体144大致相同的平坦形状。栅电极124与沟道区131重叠,栅电极124与沟道区131之间具有绝缘体144。沟道区131的平坦形状可与绝缘体144的形状大致相同。参照图5至图7,第二导线123提供在绝缘体143上。第二导线123可使用相同的材料与栅电极124提供在同一层上。因此,可使用单个掩模在与栅电极124相同的制造步骤中形成第二导线123。
第二绝缘层160提供在栅电极124上。第二绝缘层160还被称为中间绝缘层。第二绝缘层160可包括无机绝缘材料,诸如氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiON)或者氟氧化硅(SiOF)。第二绝缘层160可为单层或多层结构。当第二绝缘层160为单层时,第二绝缘层160可包括无机绝缘材料,诸如氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiON)或者氟氧化硅(SiOF)。当第二绝缘层160包括氮化硅(SiNx)和/或氮氧化硅(SiON)时,可通过将氢(H)供给至源极区133和漏极区135而减小源极区133和漏极区135的电阻。当第二绝缘层160为多层结构时,最下层可包括氮化硅(SiNx)和/或氮氧化硅(SiON),以用于将氢(H)供给至源极区133和漏极区135,可在最下层上提供包括例如氧化硅(SiOx)的层,并且可额外地在最下层上提供包括氮化硅(SiNx)和/或氮氧化硅(SiON)的层。
第二绝缘层160可包括用于暴露源极区133的接触孔163以及用于暴露漏极区135的接触孔165。第二绝缘层160和第一绝缘层111可包括用于暴露遮光层115的接触孔166。取决于晶体管TR的类型,接触孔163、165和166中的至少一个可省略。
源电极173和漏电极175提供在第二绝缘层160上。漏电极175通过接触孔165连接至漏极区135。源电极173通过接触孔163连接至源极区133,并且通过接触孔166连接至遮光层115。由于与半导体130重叠的遮光层115连接至源电极173,遮光层115与半导体130之间具有第一绝缘层111,因此源极电压(在源电极173处的电压)可施加至遮光层115。当如所述源极电压施加至遮光层115时,晶体管TR的电压-电流特性曲线图的饱和区域中的电流变化(斜坡)较小,由此改善了该晶体管TR的输出饱和特性。
源电极173和漏电极175可由金属制成,金属诸如铜(Cu)、铝(Al)、银(Ag)、钼(Mo)、铬(Cr)、金(Au)、铂(Pt)、钯(Pd)、钽(Ta)、钨(W)、钽(Ti)或镍(Ni)。源电极173和漏电极175可分别为单层或多层结构。参照图5,通过第一接触孔81连接至第二导线123并且通过第二接触孔82连接至第一导线113的连接器179提供在第二绝缘层160上。连接器179可使用相同的材料与源电极173和漏电极175提供在同一层上。
图9至图15是用于制造上面描述的显示装置的方法中的连续步骤的剖视图。在各个附图中,具有剖面线V-V’的左部部分表示时钟信号线CSL对应于图5的区域,而右部部分指示晶体管TR对应于图8的区域。
参照图9,通过溅射,在基底110上沉积诸如金属的导电材料,并且通过使用诸如光刻胶的光敏材料和第一掩模对导电材料图案化,以因此在时钟信号线CSL的区域中形成第一导线113,以及在晶体管TR的区域中形成遮光层115。
参照图10,在其上形成第一导线113和遮光层115的基底110上,通过经由化学气相沉积(CVD)沉积无机绝缘材料形成第一绝缘层111,无机绝缘材料诸如氧化硅(SiOx)、氮化硅(SiNx)、氧化铝(Al2O3)、氧化铪(HfO3)或者氧化钇(Y2O3)。如上所述,第一绝缘层111在本文中还被称为缓冲层。
通过化学气相沉积在第一绝缘层111上沉积氧化物半导体材料,诸如氧化锌(ZnO)、氧化锌锡(ZTO)、氧化锌铟(ZIO)、氧化铟(InO)、氧化钛(TiO)、氧化铟镓锌(IGZO)或者氧化铟锌锡(IZTO),并且通过使用第二掩模对氧化物半导体材料图案化,由此形成半导体130。
参照图11,在其上形成半导体130的基底110上,通过经由化学气相沉积沉积无机绝缘材料形成栅极绝缘层140,无机绝缘材料诸如氧化硅(SiOx)、氮化硅(SiNx)或者氮氧化硅(SiON)。通过经由溅射沉积诸如金属的导电材料,在栅极绝缘层140上形成栅极导电层120。在栅极导电层120上沉积光敏材料,并且使用第三掩模形成光敏薄膜图案51和52。
参照图12,使用光敏薄膜图案51和52作为掩模来蚀刻栅极导电层120,以形成时钟信号线CSL的第二导线123和晶体管TR的栅电极124。在此情况下,可通过湿法蚀刻或者干法蚀刻来蚀刻栅极导电层120。
参照图13,使用光敏薄膜图案51和52作为掩模来蚀刻栅极绝缘层140,以形成绝缘体143和144。在此,可通过干法蚀刻来蚀刻栅极绝缘层140。在此过程中,可对未被光敏薄膜图案51和52覆盖的暴露半导体130以及绝缘体144掺杂诸如SF6的蚀刻气体,由此可减小半导体130的暴露部分的电阻。相应地,由绝缘体144所覆盖的半导体层部分保留为沟道区131,并且剩余部分具有导电性从而形成源极区133和漏极区135。然而,当栅极绝缘层140被图案化时,半导体130的大部分可维持作为半导体的特性。通过使用相同的光敏薄膜图案51和52蚀刻第二导线123和栅电极124,并且还蚀刻绝缘体143和144,因此第二导线123和绝缘体143可具有大致相同的平坦形状,并且栅电极124和绝缘体144可具有相同的平坦形状。
未被绝缘体144覆盖而暴露的半导体130由此被额外地处理,以形成源极区133和漏极区135。在此情况下,处理方法可包括还原气氛中的热处理以及使用气体等离子的等离子处理方法,气体等离子诸如氢(H2)、氦(He)、磷化氢(PH3)、氨(NH3)、硅烷(SiH4)、甲烷(CH4)、乙炔(C2H2)、乙硼烷(B2H6)、二氧化碳(CO2)、锗烷(GeH4)、硒化氢(H2Se)、硫化氢(H2S)、氩(Ar)、氮(N2)、氧化氮(N2O)或者三氟甲烷(CHF3)。由绝缘体144覆盖的半导体130大部分维持作为半导体的特性,以因此变成沟道区131。
参照图14,在其上形成栅电极124的基底110上,经由化学气相沉积沉积诸如氧化硅(SiOx)、氮化硅(SiNx)和氮氧化硅(SiON)的无机绝缘材料,以形成具有单层或多层结构的第二绝缘层160。对具有导电性的半导体130或者源极区133和漏极区135掺杂用于第二绝缘层160的成膜过程的、包括在气体化合物中的诸如氢的成分,气体化合物诸如SiH4或NH3,使得除沟道区131之外的部分可具有低电阻。在第二绝缘层160成膜之后,由第二绝缘层160包括的诸如氢的成分可扩散至源极区133和漏极区135,以具有低电阻。
通过使用第四掩模对第二绝缘层160图案化,以形成用于暴露第一导线113的接触孔82、用于暴露第二导线123的接触孔81、用于暴露源极区133的接触孔163、用于暴露漏极区135的接触孔165以及用于暴露遮光层115的接触孔166。在使用第四掩模的同一图案化过程期间,暴露第一导线113的接触孔82连同形成在第二绝缘层160中的接触孔82,以及暴露遮光层115的接触孔166连同形成在第二绝缘层中的接触孔166一起,形成在第一绝缘层111中。取决于晶体管TR的类型,可不形成接触孔163、165和166中的至少一个。
参照针对最终结构的图15,诸如金属的导电材料然后通过溅射,沉积在第二绝缘层160上,并且通过使用第五掩模对导电材料图案化以形成包括连接器179、源电极173和漏电极175的多个数据导体。在此情况下,第一导线113通过连接器179电连接至第二导线123,并且遮光层115通过源电极173电连接至源极区133。
如所描述的,可使用在形成晶体管TR时使用的相同掩模与晶体管TR一起,形成时钟信号线CSL的导线113和123、接触孔81和82、以及用于通过接触孔81和82连接导线113和123的连接器179。因而,为了形成本文描述的时钟信号线CSL的双层结构,不需要增加掩模或者任何额外的处理步骤。
下面描述显示装置的像素区域。
下面描述的示例性显示装置是液晶显示器,并且下面将简化或省略前述组成元件的重复描述以避免冗余。
图16示出了多个像素区域中的一个,并且各像素区域从上到下、从左到右布置在液晶面板上。参照图16和图17,在基底110上提供遮光层115和存储电极线117。存储电极线117可在行方向上延伸以穿过像素区域,并且可在列方向上延伸以与像素电极191重叠。存储电极线117接收诸如公共电压的预定电压。存储电极线117连接至遮光层115。因而,与栅极驱动器的晶体管的情况相反,像素区域中的晶体管的源电极173不连接至遮光层115。可替换地,遮光层115可不与存储电极线117连接、但可连接至源电极173,或者可不与存储电极线117和源电极173中的任一个连接。存储电极线117可提供在与遮光层115不同的层(例如,与栅极线121相同的层)上。
第一绝缘层111提供在遮光层115和存储电极线117上,并且包括沟道区131、源极区133和漏极区135的半导体130提供在其上。
绝缘体144和栅电极124提供在半导体130上,并且连接至栅电极124的栅极线121提供在第一绝缘层111上。栅极线121可使用相同的材料与栅电极124形成在同一层上。栅极线121可大体在行方向上延伸。与栅极线121具有大致相同的平坦形状的绝缘体可提供在栅极线121与第一绝缘层111之间。
第二绝缘层160提供在栅电极124和栅极线121上,并且分别通过形成在第二绝缘层160中的接触孔163和165连接至源极区133和漏极区135的源电极173和漏电极175提供在第二绝缘层160上。主要在列方向上延伸的数据线171提供在第二绝缘层160上,并且源电极173可以是数据线171的与源极区133重叠的一部分。
第三绝缘层180提供在源电极173、漏电极175和数据线171上。第三绝缘层180可包括有机绝缘材料和/或无机绝缘材料,并且可以是单层或多层结构。第三绝缘层180的上侧可为大致平坦的。
包括水平主干192、竖直主干193和细分支194的像素电极191提供在第三绝缘层180上。像素电极191通过提供在第三绝缘层180中的接触孔181连接至漏电极175。像素电极191可由透明导电材料制成,透明导电材料诸如ITO或IZO。参照图7,提供在第三绝缘层180上、并且连接第一导线113和第二导线123的连接器179’可使用相同的材料与像素电极191提供在同一层上。
当通过经由栅极线121施加的栅极导通电压导通晶体管时,像素电极191接收经由数据线171施加的数据电压,并且使用该数据电压对像素充电。根据本发明的原理,充电时长可随着时钟信号线CSL的电阻的减小而缩短,从而因此对显示器的高分辨率、快速驱动响应更快,并且可减小显示面板的尺寸、数据线171和/或栅极线121的宽度,由此改善透光率。
绝缘层210提供在像素电极191上,绝缘层210与像素电极191之间具有包括液晶31的液晶层3。绝缘层210可以是基底。
公共电极270提供在绝缘层210上方或下方,用于与像素电极191一起对液晶层3生成电场并且控制液晶31的布置方向。公共电极270可提供在基底110与液晶层3之间。公共电极270可由透明导电材料制成,透明导电材料诸如ITO或IZO。
取向层11提供在像素电极191和液晶层3之间,并且取向层21提供在公共电极270和液晶层3之间。当未对液晶层3生成电场时,取向层11和取向层21可控制液晶31的初始取向。
虽然本文已描述了某些示例性实施例和实施方式,但根据该描述,其他实施例和修改将是明显的。相应地,本发明构思不限于这些实施例,而是由提出的权利要求的更广泛的范围和各种显而易见的修改以及等同设置限定。
Claims (11)
1.一种显示装置,包括:
基底;
栅极驱动器,所述栅极驱动器设置在所述基底上并且包括多个级;
时钟信号线,所述时钟信号线设置在所述基底上并且将时钟信号传输至所述级中的至少一个级;
晶体管,所述晶体管设置在所述基底上;以及
遮光层,所述遮光层设置在所述基底与所述晶体管之间并且与所述晶体管重叠,
其中,所述时钟信号线包括第一导线和与所述第一导线重叠的第二导线,并且
所述第一导线与所述遮光层设置在同一层。
2.如权利要求1所述的显示装置,其中
所述时钟信号线通过连接器连接至所述至少一个级,并且
所述第一导线通过所述连接器电连接至所述第二导线。
3.如权利要求2所述的显示装置,其中
所述第二导线包括与所述第一导线重叠的切口,并且
所述连接器通过所述切口连接至所述第一导线。
4.如权利要求3所述的显示装置,进一步包括:
第一绝缘层,所述第一绝缘层设置在所述第一导线与所述第二导线之间;以及
第二绝缘层,所述第二绝缘层设置在所述第一导线和所述第二导线上,
其中,所述连接器通过形成在所述第二绝缘层中的第一接触孔连接至所述第二导线,并且通过形成在所述第一绝缘层和第二绝缘层中的第二接触孔连接至所述第一导线。
5.如权利要求4所述的显示装置,进一步包括:
绝缘体,所述绝缘体设置在所述第一绝缘层和所述第二导线之间,并且具有与所述第二导线的平坦形状相同的平坦形状。
6.如权利要求1所述的显示装置,其中
所述第一导线包括第一开口,并且
所述第二导线包括与所述第一开口重叠的第二开口。
7.如权利要求1所述的显示装置,其中
所述晶体管包括栅电极、源电极、漏电极和半导体,并且
所述第二导线与所述晶体管的所述栅电极设置在同一层。
8.如权利要求7所述的显示装置,其中
所述时钟信号线通过连接器连接至所述至少一个级,
所述连接器与所述晶体管的所述源电极和所述漏电极设置在同一层。
9.如权利要求7所述的显示装置,其中
所述半导体设置在所述遮光层与所述栅电极之间。
10.如权利要求7所述的显示装置,其中,
所述源电极电连接至所述遮光层。
11.如权利要求1所述的显示装置,进一步包括:
像素电极,所述像素电极连接至所述晶体管,
其中,所述时钟信号线通过连接器连接至所述至少一个级,
其中,所述连接器与所述像素电极设置在同一层。
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