CN107293493A - 铟镓锌氧化物薄膜晶体管的制作方法 - Google Patents

铟镓锌氧化物薄膜晶体管的制作方法 Download PDF

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CN107293493A
CN107293493A CN201710418690.6A CN201710418690A CN107293493A CN 107293493 A CN107293493 A CN 107293493A CN 201710418690 A CN201710418690 A CN 201710418690A CN 107293493 A CN107293493 A CN 107293493A
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李松杉
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/092002 priority patent/WO2018223476A1/zh
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Abstract

本发明涉及铟镓锌氧化物薄膜晶体管的制作方法，包括：将缓冲层、有源层、栅电极层和栅极绝缘层依次构造在基板上并做图形化处理；通过溅射的方式在处理后的缓冲层、有源层、栅电极层和栅极绝缘层上沉积透明绝缘金属氧化物层，将透明绝缘金属氧化物层进行退火处理，使薄膜晶体管电性得到改善。在透明绝缘金属氧化物层上沉积一层介电层，并利用黄光和干蚀刻工艺将介电层和透明绝缘金属氧化物层做图形化处理。通过溅射的方式沉积一层很薄的透明绝缘金属氧化物层，再进行退火处理，在利用后续的退火处理，将铝向铟镓锌氧化物半导体层表面扩散，同样可以达到源漏极接触区域导体化的结果，而且阻抗不会恢复增大，从而大幅度改善薄膜晶体管的电性。

Description

铟镓锌氧化物薄膜晶体管的制作方法
技术领域
本发明涉及显示器技术领域，尤其涉及铟镓锌氧化物薄膜晶体管的制作方法。
背景技术
铟镓锌氧化物半导体由于电子迁移率高，漏电流低，制备温度低的特点，引起了广泛的关注。传统的顶栅自对准结构在完成层、栅电极层和栅极绝缘层的图形化后，会采用等离子体(Ar、He、N2等plasma)对源漏极接触的区域进行导体化处理来达到减小接触阻抗的目的，但是在后续的退火时，源漏极接触的区域的阻抗会渐渐恢复变大，影响载流子的传输，最终影响薄膜晶体管的电性。
发明内容
针对上述问题中存在的不足之处，本发明提供铟镓锌氧化物薄膜晶体管的制作方法。
为实现上述目的，本发明提供铟镓锌氧化物薄膜晶体管的制作方法，该方法包括：
将缓冲层、有源层、栅电极层和栅极绝缘层依次构造在基板上并做图形化处理；
通过溅射的方式在处理后的所述缓冲层、有源层、所述栅电极层和所述栅极绝缘层上沉积透明绝缘金属氧化物层，将所述透明绝缘金属氧化物层进行退火处理，使薄膜晶体管电性得到改善；
在所述透明绝缘金属氧化物层上沉积一层介电层，并利用黄光和干蚀刻工艺将所述介电层和所述透明绝缘金属氧化物层做图形化处理；
将源漏极电极沉积在所述介电层上并图形化处理；
钝化层和平坦绝缘有机层构造在所述介电层上并做图形化处理；
铟锡氧化物电极制作和像素定义层构造在所述钝化层和所述平坦绝缘有机层上并做图形化处理
有机发光器件构造在所述铟锡氧化物电极上。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
所述退火处理中所述透明绝缘金属氧化物层向所述有源层表面扩散，用于增加所述有源层表面载流子的浓度，使所述源漏极电极区域导体化，在后续的退火过程中也不会复原，所述透明绝缘金属氧化物层用于起到阻挡层的作用，防止水和氧对所述主动层的影响，使所述薄膜晶体管电性得到改善。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
所述透明绝缘金属氧化物层的厚度为8nm-12nm。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
所述透明绝缘金属氧化物层的厚度为10nm。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
所述退火处理温度为280-320℃。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
所述退火处理温度为300℃。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
对所述透明绝缘金属氧化物层再次退火处理。
上述的铟镓锌氧化物薄膜晶体管的制作方法，
所述透明绝缘金属氧化物层由氧化铝制成。
在上述技术方案中，本发明提供的铟镓锌氧化物薄膜晶体管的制作方法，与现有技术相比，通过溅射的方式沉积一层很薄的透明绝缘金属氧化物层，再进行退火处理，在利用后续的退火处理，将铝向铟镓锌氧化物半导体层表面扩散，同样可以达到源漏极接触区域导体化的结果，而且阻抗不会恢复增大，从而大幅度改善薄膜晶体管的电性。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。
图1为本申请的一个实施例中铟镓锌氧化物薄膜晶体管的制作方法流程图。
图2为本申请的一个实施例中铟镓锌氧化物薄膜晶体管的结构示意图。
具体实施方式
下面将结合附图对本发明作进一步说明。
如图1所示，铟镓锌氧化物薄膜晶体管的制作方法，该方法包括：
步骤S101：将缓冲层(Buffer)、有源层(IGZO)、栅电极层(Gate electrode)和栅极绝缘层(Gate insulator)依次构造在基板上并做图形化处理。
步骤S102：通过溅射(sputter)的方式在处理后的缓冲层、有源层、栅电极层和栅极绝缘层上沉积透明绝缘金属氧化物层(Al2O3)，将透明绝缘金属氧化物层进行退火(Anneal)处理，使薄膜晶体管电性得到改善。
步骤S103：在透明绝缘金属氧化物层上沉积一层介电层(inter layerdielectric：SiOx)，并利用黄光(photo)和干蚀刻工艺(dry etch)将介电层和透明绝缘金属氧化物层做图形化处理。
步骤S104：将源漏极(Mo/Al/M0)电极沉积在介电层上并图形化处理；
步骤S105：钝化层(passivation)和平坦绝缘有机层(planarizatio)构造在介电层上并做图形化处理。
步骤S106：铟锡氧化物电极(ITO)和像素定义层(PDL)构造在钝化层和平坦绝缘有机层上并做图形化处理。
步骤S107：有机发光器件(OLED)构造在铟锡氧化物电极上。
在一个实施例中，退火处理中透明绝缘金属氧化物层向有源层表面扩散，用于增加有源层表面载流子的浓度，使源漏极电极接触(contact)的区域导体化的结果，在后续的退火过程中也不会复原，透明绝缘金属氧化物层用于起到阻挡层的作用，防止水(H2O)和氧(O2)对主动层的影响，而且阻抗不会恢复增大，使薄膜晶体管电性得到改善。
在一个实施例中，透明绝缘金属氧化物层的厚度为8nm-12nm，优选的，透明绝缘金属氧化物层的厚度优选为10nm。
在一个实施例中，再将带有透明绝缘金属氧化物层的铟镓锌氧化物半导体层、栅电极层和栅极绝缘层进行退火处理。
在一个优选实施例中，退火处理温度为280-320℃。
在一个优选实施例中，退火处理温度优选为300℃。
在一个实施例中，对透明绝缘金属氧化物层再次退火处理。
在一个实施例中，透明绝缘金属氧化物层由氧化铝制成或其他透明绝缘金属氧化物制成。
如图2所示，具体使用时：
在基板5上制作缓冲层4，有源层3和栅极绝缘层2和栅电极层1(采用Al+Mo结构)，并使用光刻工艺使其图形化。
利用物理气象沉淀(physical vapor deposition)沉积一层很薄(约10nm)的透明绝缘金属氧化物层6，再进行退火制程，温度控制在300℃左右，此时透明绝缘金属氧化物层6中的铝会向铟镓锌氧化物半导体层3表面扩散，增加铟镓锌氧化物半导体层3表面载流子的浓度，使源漏极8区域导体化。
沉积氧化硅介电层(inter layer dielectric SiOx)7，并利用黄光(photo)和干蚀刻(dry etch)工艺将氧化硅介电层(inter layer dielectric SiOx)7和透明绝缘金属氧化物层6图形化，接着沉积源漏极8电极(Mo/Al/M0)并图形化。
a、制作钝化层(passivation)和平坦绝缘有机层(planarizatio)9并图形化。
b、制作铟锡氧化物(ITO)电极12并图形化，制作像素定义层(pixel divisionlayer)10并图形化。
c、蒸镀有机发光二极管(Organic Light Emitting Diode)有机发光材料，完成有机发光二极管器件11的制作。
通过溅射的方式沉积一层很薄的透明绝缘金属氧化物层(Al2O3)6，再进行退火(anneal)处理，在利用后续的退火处理，此时透明绝缘金属氧化物层6中的铝(Al)会向有源层(IGZO)3表面扩散，增加有源层3表面载流子的浓度，使源漏极(SD contact)8电极区域导体化，而在后续的退火(anneal)过程中也不会复原。同时透明绝缘金属氧化物层6可以起到很好的阻挡层的作用，防止水(H2O)和氧气(O2)对有源层3的影响，进行可以大幅度改善薄膜晶体管(TFT)的电性。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (10)

1.铟镓锌氧化物薄膜晶体管的制作方法，其特征在于，该方法包括：
步骤S101：将缓冲层、有源层、栅电极层和栅极绝缘层依次构造在基板上并做图形化处理；
步骤S102：通过溅射的方式在处理后的所述缓冲层、有源层、所述栅电极层和所述栅极绝缘层上沉积透明绝缘金属氧化物层，将所述透明绝缘金属氧化物层进行退火处理，使薄膜晶体管电性得到改善；
步骤S103：在所述透明绝缘金属氧化物层上沉积一层介电层，并利用黄光和干蚀刻工艺将所述介电层和所述透明绝缘金属氧化物层做图形化处理；
步骤S104：将源漏极电极沉积在所述介电层上并图形化处理。
2.根据权利要求1所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
在步骤S102中，所述退火处理中所述透明绝缘金属氧化物层向所述有源层表面扩散，用于增加所述有源层表面载流子的浓度，使所述源漏极电极区域导体化，在后续的退火过程中也不会复原，所述透明绝缘金属氧化物层用于起到阻挡层的作用，防止水和氧对所述主动层的影响，使所述薄膜晶体管电性得到改善。
3.根据权利要求2所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
所述透明绝缘金属氧化物层的厚度为8nm-12nm。
4.根据权利要求3所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
所述透明绝缘金属氧化物层的厚度为10nm。
5.根据权利要求1所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
在步骤S102中，所述退火处理温度为280-320℃。
6.根据权利要求5所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
所述退火处理温度为300℃。
7.根据权利要求1所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
在步骤S102中，对所述透明绝缘金属氧化物层再次退火处理。
8.根据权利要求1所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
所述透明绝缘金属氧化物层由氧化铝制成。
9.根据权利要求1所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
还包括在所述介电层上构造钝化层和平坦绝缘有机层并做图形化处理。
10.根据权利要求9所述的铟镓锌氧化物薄膜晶体管的制作方法，其特征在于：
铟锡氧化物电极制作和像素定义层构造在所述钝化层和所述平坦绝缘有机层上并做图形化处理；
有机发光器件构造在所述铟锡氧化物电极上。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108389867A (zh) * 2018-02-26 2018-08-10 深圳市华星光电半导体显示技术有限公司 阵列基板及阵列基板的制作方法
CN111244110A (zh) * 2020-01-19 2020-06-05 深圳市华星光电半导体显示技术有限公司 一种显示面板以及电子装置
WO2021051509A1 (zh) * 2019-09-16 2021-03-25 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116207132B (zh) * 2022-01-14 2024-03-15 北京超弦存储器研究院 薄膜晶体管及其制备方法
CN115763632A (zh) * 2022-11-30 2023-03-07 通威太阳能（安徽）有限公司 太阳电池及太阳电池的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084486A (zh) * 2008-07-03 2011-06-01 索尼公司 薄膜晶体管及显示装置
CN102208452A (zh) * 2010-03-30 2011-10-05 索尼公司 薄膜晶体管及其制造方法、以及显示装置
CN102646632A (zh) * 2012-03-08 2012-08-22 京东方科技集团股份有限公司 阵列基板及其制作方法和显示装置
US20120241744A1 (en) * 2011-03-24 2012-09-27 Sony Corporation Display apparatus and method of manufacturing the same
CN103489827A (zh) * 2013-09-27 2014-01-01 京东方科技集团股份有限公司 一种薄膜晶体管驱动背板及其制作方法、显示面板

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622175B (zh) * 2008-07-31 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101851403B1 (ko) * 2009-07-18 2018-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR20190093705A (ko) * 2009-11-27 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
CN104716139B (zh) * 2009-12-25 2018-03-30 株式会社半导体能源研究所 半导体装置
US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
WO2013039126A1 (en) * 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9459102B2 (en) * 2011-12-30 2016-10-04 Intel Corporation Managing navigation changes
CN102723359B (zh) * 2012-06-13 2015-04-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
KR102210298B1 (ko) * 2013-05-09 2021-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9960281B2 (en) * 2015-02-09 2018-05-01 The Hong Kong University Of Science And Technology Metal oxide thin film transistor with source and drain regions doped at room temperature
JP6674269B2 (ja) * 2015-02-09 2020-04-01 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
TWI777164B (zh) * 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
DE112016002769T5 (de) * 2015-06-19 2018-03-29 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät
US9911756B2 (en) * 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP6839986B2 (ja) * 2016-01-20 2021-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN109121438B (zh) * 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
KR20170096956A (ko) * 2016-02-17 2017-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
US10096720B2 (en) * 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR102651930B1 (ko) * 2016-07-29 2024-03-27 엘지디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
CN106449655A (zh) * 2016-10-18 2017-02-22 武汉华星光电技术有限公司 薄膜晶体管阵列基板及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084486A (zh) * 2008-07-03 2011-06-01 索尼公司 薄膜晶体管及显示装置
CN102208452A (zh) * 2010-03-30 2011-10-05 索尼公司 薄膜晶体管及其制造方法、以及显示装置
US20120241744A1 (en) * 2011-03-24 2012-09-27 Sony Corporation Display apparatus and method of manufacturing the same
CN102646632A (zh) * 2012-03-08 2012-08-22 京东方科技集团股份有限公司 阵列基板及其制作方法和显示装置
CN103489827A (zh) * 2013-09-27 2014-01-01 京东方科技集团股份有限公司 一种薄膜晶体管驱动背板及其制作方法、显示面板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108389867A (zh) * 2018-02-26 2018-08-10 深圳市华星光电半导体显示技术有限公司 阵列基板及阵列基板的制作方法
WO2021051509A1 (zh) * 2019-09-16 2021-03-25 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN111244110A (zh) * 2020-01-19 2020-06-05 深圳市华星光电半导体显示技术有限公司 一种显示面板以及电子装置

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