CN107275460A - A kind of luminous LED component of one side and method for packing - Google Patents
A kind of luminous LED component of one side and method for packing Download PDFInfo
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- CN107275460A CN107275460A CN201710566326.4A CN201710566326A CN107275460A CN 107275460 A CN107275460 A CN 107275460A CN 201710566326 A CN201710566326 A CN 201710566326A CN 107275460 A CN107275460 A CN 107275460A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The LED component and method for packing lighted the invention discloses a kind of one side, device size is small, brightness is high, method for packing prepares phosphor powder layer using physical vaporous deposition, on phosphor powder layer surface, filling first encapsulates glue and obtains fluorescent adhesive layer, coat the second fluorescent glue and be allowed to solidify and obtain after fluorescent film obtained semi-finished product being inverted on substrate, the device after cutting is encapsulated after LED chip solidification is bonded on first layer phosphor powder layer surface, LED component small volume made from this method, thickness of thin, suitable for requiring higher backlight to light and thin degree, traditional support rack type LED component is solved to be difficult to reduce the size, the problem of production yield is low；Phosphor powder layer is subjected to the method that separating dry space from moist space is prepared respectively with encapsulation glue layer, solve the problem of existing gluing process and spraying coating process are low to encapsulation fluorescent glue utilization rate, the method effectively reduces LED lamp bead product size, the utilization rate that improves fluorescent glue, the brightness that ensure that LED component and color area concentration degree.
Description
Technical field
The invention belongs to LED encapsulation technologies field, it is related to a kind of LED component and method for packing, relates in particular to one kind
LED component and method for packing that one side emits white light.
Background technology
Light emitting diode (LED) is a kind of solid-state semiconductor device, by the use of solid semiconductor chip as luminescent material, when
Two ends add forward voltage, the carrier in semiconductor occur it is compound, release superfluous energy and cause photon to launch generation can
See light.In making, except to be welded to two electrodes of LED chip, so as to draw outside positive and negative electrode, in addition it is also necessary to right
LED chip and two electrodes are protected, that is, carry out LED encapsulation.
At present, the LED packing forms of main flow are the LED/light source of belt supporting frame on the market, this packing forms packaged light source
Size is more much bigger than chip size itself, and phosphor process continues to use traditional dispensing, spraying etc., but this traditional encapsulation
Form can not gradually meet user to LED product miniaturization, integrated, high brightness demand, especially with electricity such as mobile phones
Sub- product increasingly pursues narrow frame and lightening, also to accomplish smaller and thinner as the LED lamp bead of backlight, according to tradition
The structure design of stent-type backlight product, supporting structure, which is reduced, can then reduce the size of LED chip, so as to reduce the bright of lamp bead
Degree, but for backlight product, lamp bead brightness is continuing to increase, the product of reduction brightness be able to not certainly will be connect by consumer
By, meanwhile, the LED of rack-like structures by packaging technology due to being limited, and the smaller difficulty of processing of size is higher, works as LED lamp bead
When thickness is less than or equal to 0.3mm, supporting structure is difficult to realize.
In order to solve conventional stent-type LED encapsulation structure chips lay when limited by die bond board height, can not
Lay large size chip to meet user to this problem of the demand of high brightness, Chinese patent on the premise of supporting structure reduces
Document CN104716247A discloses a kind of luminous light-emitting device in side, the light-emitting device small volume and frivolous, but its fluorescence
Glue is prepared with the technique of spraying, and this technique is low to fluorescent glue utilization rate, the color area concentration degree of finished product lamp bead is relatively low.
The content of the invention
Therefore, the technical problems to be solved by the invention are that conventional stent type LED component size is big, it is unsuitable for light and thin type
Product and there is the problem of fluorescent glue utilization rate is low, color area concentration degree is low in improved products, so as to propose a kind of to reduce device
The one side of luminosity and color area concentration degree luminous LED component method for packing is not reduced while size.
In order to solve the above technical problems, the technical scheme is that：
The present invention provides a kind of one side luminous LED component, and the device includes pcb board and along away from the pcb board side
To the luminescence chip being sequentially arranged, fluorescent adhesive layer and top capsulation glue-line, the luminescence chip, fluorescent adhesive layer and top capsulation glue
Layer forms luminescence component, and the luminescence component side is provided with side encapsulation glue-line.
Preferably, the fluorescent adhesive layer is by the first phosphor powder layer, the second phosphor powder layer along the remote luminescence chip
With encapsulation glue layer composition, the wavelength of transmitted light of first phosphor powder layer is 500-680nm, the hair of second phosphor powder layer
Penetrate a length of 500-680nm of light wave.
The present invention also provides a kind of method for packing of the luminous LED component of described one side, and it comprises the following steps：
S1, in substrate surface adhesive film is pasted, the first fluorescent material is deposited in glued membrane layer surface using physical vaporous deposition
Layer；
S2, the first phosphor powder layer surface physics be vapor-deposited the second phosphor powder layer；
S3, in the second phosphor powder layer surface filling first glue is encapsulated, obtain fluorescent adhesive layer, the first encapsulation glue
Refractive index is not less than 1.50；
The semi-finished product that S4, baking procedure S3 are obtained are to glue curing is encapsulated, the fluorescent adhesive layer solidified；
S5, the fluorescent adhesive layer surface coating second encapsulate glue, and baking-curing second encapsulation glue, obtain top surface
Glue-line is encapsulated, the top capsulation glue-line constitutes fluorescent film with fluorescent adhesive layer, and the refractive index of the second encapsulation glue is not less than
1.40；
S6, the removal adhesive film, fluorescent film is separated with substrate；
S7, in substrate surface adhesive film is pasted, fluorescent film is inverted and is covered on the adhesive film, makes the first phosphor powder layer position
In top surface；
S8, the first phosphor powder layer surface bond LED chip, and toast fix LED chip.
Preferably, also including after the step S8：
The semi-finished product that S9, cutting step S8 are obtained, obtain single LEDs；
S10, single LEDs are bonded in pcb board and the filling with sealant water around LED, obtain side encapsulation glue-line, it is described
The reflectivity of sealing glue is not less than 75%；
Sealing glue at the top of S11, removal LED chip, two adjacent LED gaps are cut along along pcb board, are obtained
The luminous LED component of one side.
Preferably, the technological parameter of the physical vapour deposition (PVD) formation phosphor powder layer is：Chamber pressure 100-1000Pa,
100-500 watts of power；The sedimentation time of first phosphor powder layer is 0.5-20min, during the deposition of second phosphor powder layer
Between be 0.5-35min.
Preferably, the baking process in the step S4 is：First with 1-10 DEG C/min heating rate by described half
Finished product rises to 40-60 DEG C by room temperature, is incubated 0.5-2h, is then warming up to 65-90 DEG C, insulation with 1-10 DEG C/min heating rate
0.5-4h, is finally warming up to 120-200 DEG C with 1-10 DEG C/min heating rate, is incubated 1-12h.
Preferably, the process of baking-curing is described in the step S5：First with 1-10 DEG C/min heating rate
The semi-finished product for being coated with the second encapsulation glue rise to 50-80 DEG C by normal temperature, 1-3h are incubated, then with 1-10 DEG C/min heating
Speed is warming up to 100-200 DEG C, is incubated 1-9h.
Preferably, also including repeat step S2 after the step S2, if the step of preparing dried layer phosphor powder layer.
Preferably, the thickness of the fluorescent film is 100-400 μm.
Preferably, the fluorescent material is silicate, aluminate, fluoride, phosphate, nitride or sulfide fluorescence
Powder, the wavelength of transmitted light of the LED chip is 230-480nm；The temperature toasted in the step S8 is 120-180 DEG C.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
(1) the luminous LED component of one side of the present invention, the device includes pcb board and along away from the pcb board side
To the luminescence chip being sequentially arranged, fluorescent adhesive layer and top capsulation glue-line, the luminescence chip, fluorescent adhesive layer and top capsulation glue
Layer forms luminescence component, and the luminescence component side is provided with side encapsulation glue-line.The LED component size is small, brightness is high, fits
With with the less mobile phone backlight of size, and the overall brightness of mobile phone backlight can be improved by increasing the method for LED component quantity.
(2) the luminous LED component method for packing of one side of the present invention, if preparing dried layer using physical vaporous deposition
Phosphor powder layer, then encapsulates glue in phosphor powder layer surface filling first and obtains fluorescent adhesive layer, coat the second fluorescent glue and make
Solidification obtain after fluorescent film obtained semi-finished product being inverted on substrate, bond LED chip on first layer phosphor powder layer surface
Device after cutting is encapsulated after solidification, LED component small volume made from this method, thickness is low, it is adaptable to mobile phone etc.
Higher backlight is required to light and thin degree, solves that traditional support rack type LED component is difficult to reduce the size, production yield is low asks
Topic, meanwhile, the method that phosphor powder layer is prepared respectively with encapsulation glue layer progress separating dry space from moist space also solves existing gluing process
With spraying coating process it is low to packaging plastic water use efficiency the problem of, the utilization rate that improves fluorescent glue, the brightness that ensure that LED component and
Color area concentration degree.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation for the LED component that the big face described in the embodiment of the present invention lights；
Fig. 2 is the structural representation of single luminescence component in the LED component that the one side described in the embodiment of the present invention lights.
Reference is expressed as in figure：1-PCB plates；2- luminescence chips；3- fluorescent adhesive layers；4- top capsulation glue-lines；5- sides
Face sealant layer.
Embodiment
In order that present disclosure is more likely to be clearly understood, below according to specific embodiment of the invention to this hair
It is bright to be described in further detail.
Embodiment 1
The present embodiment provides a kind of one side luminous LED component, as shown in Figure 1-2, and the device includes pcb board 1 and edge
Luminescence chip 2, fluorescent adhesive layer 3 and the top capsulation glue-line 4 being sequentially arranged away from the direction of pcb board 1, the luminescence chip 2,
Fluorescent adhesive layer 3 and one luminescence component of formation of top capsulation glue-line 4, the luminescence component side is provided with side sealant layer 5.
Specifically, the fluorescent adhesive layer 3 is by along the first phosphor powder layer being sequentially arranged away from the luminescence chip 2, second
Phosphor powder layer and encapsulation glue layer composition, wherein the wavelength of transmitted light of first phosphor powder layer is 500-680nm, described second
The wavelength of transmitted light of phosphor powder layer is 500-680nm；Preferably, the wavelength of transmitted light of first phosphor powder layer is 580-
680nm, the wavelength of transmitted light of second phosphor powder layer is 500-580nm.
The present embodiment also provides a kind of one side luminous LED component method for packing, and it comprises the following steps：
S1, one substrate of offer, the substrate is glass substrate, pyrolysis adhesive film is pasted in substrate surface, using physics gas
Phase sedimentation deposits the first phosphor powder layer in pyrolysis glued membrane layer surface, and the first phosphor powder layer raw material is commercially available rare earth doped
The silicate fluorescent powder of ion, its wavelength of transmitted light is 580nm, and sedimentation time is 0.5min.
S2, using physical vaporous deposition the first phosphor powder layer surface deposit the second phosphor powder layer, second fluorescence
The raw material of bisque is sialon fluorescent powder, and its wavelength of transmitted light is 500nm, and sedimentation time is 35min, processes of physical vapor deposition
In, chamber pressure is 100Pa, and power is 100 watts.
S3, the second phosphor surface filling first encapsulate glue, by first encapsulation glue be added to the second phosphor powder layer
Surface, makes it flow deposition naturally, is filled in the space of fluorescent material, and the first encapsulation glue is the silicon that refractive index is not less than 1.5
Resin, its sedimentation time is 1h, then removes the first encapsulation glue that fluorescent material is not goed deep on phosphor powder layer surface, puts down its surface
It is whole.
S4, the obtained semi-finished product of step S3 are placed in baking oven, first with 1 DEG C/min heating rate by the semi-finished product by
Room temperature rises to 40 DEG C, is incubated 0.5h, is then warming up to 65 DEG C with 1 DEG C/min heating rate, is incubated 0.5h, finally with 1 DEG C/
Min heating rate is warming up to 120 DEG C, is incubated 1h, the fluorescent adhesive layer 3 solidified.
S5, the surface of fluorescent adhesive layer 3 coating second encapsulate glue, it is described second encapsulation glue be refractive index be not less than 1.4
Polyurethane packaging plastic, the semi-finished product for being coated with polyurethane packaging plastic are placed in baking oven, will first be applied with 1 DEG C/min heating rate
The semi-finished product for being covered with the second encapsulation glue rise to 50 DEG C by normal temperature, are incubated 1h, are then warming up to 1 DEG C/min heating rate
100 DEG C, 1h is incubated, top capsulation glue-line 4 is obtained, the top capsulation glue-line 4 constitutes fluorescent film with fluorescent adhesive layer 3, described glimmering
The thickness of light film is 100mm.
S6, heating remove pyrolysis adhesive film, and fluorescent film is separated with substrate.
S7, in substrate surface pyrolysis adhesive film is pasted again, fluorescent film is inverted and is covered on the adhesive film, make first glimmering
Light bisque is located at top layer (upper surface of fluorescent film).
S8, in the first phosphor powder layer surface coated with adhesive, and bond on default position some LED flip chips,
The wavelength of transmitted light of the LED flip chip is 480nm, and obtained semi-finished product, which are placed in baking oven and toasted at 120 DEG C, makes bonding
Agent solidifies, and the blue light of the transmitting of luminescence chip 2 and the feux rouges of the first phosphor powder layer, the green glow of the second phosphor powder layer are combined, and form white
Light is launched, and obtains the white light LED part semi-finished product of full wafer.
S9, the gap cutting full wafer white light LED part semi-finished product along LED chip, are divided into single LEDs, cut
The blade thickness cut is 0.05mm.
S10, single LEDs with elargol electroconductive binder are adhered into pcb board 1, then by binding agent baking-curing, Ran Hou
Filling with sealant water around LED, sealing glue can be high viscosity silicones, and its reflectivity is more than or equal to 75%, will sealed
Glue baking-curing.
Sealing glue at the top of S11, removal LED chip, retains the sealing glue of side, obtains side sealant layer 5, so
Two adjacent LED gaps are cut along along pcb board afterwards, that is, obtain the luminous LED component of single one side.
Embodiment 2
The present embodiment provides a kind of one side luminous LED component method for packing, and it comprises the following steps：
S1, one substrate of offer, the substrate is ceramic substrate, UV adhesive films is pasted in substrate surface, using physical vapor
Sedimentation deposits the first phosphor powder layer in UV glued membranes layer surface, and the first phosphor powder layer raw material is commercially available doping with rare-earth ions
Phosphate phosphor, its wavelength of transmitted light be 680nm, sedimentation time is 20min.
S2, using physical vaporous deposition the first phosphor powder layer surface deposit the second phosphor powder layer, second fluorescence
The raw material of bisque is the sulphide fluorescent material doped with rare earth ion, and its wavelength of transmitted light is 580nm, and sedimentation time is
In 0.5min, processes of physical vapor deposition, chamber pressure is 1000Pa, and power is 500 watts.
S3, the second phosphor surface filling first encapsulate glue, by first encapsulation glue be added to the second phosphor powder layer
Surface, makes it flow deposition naturally, is filled in the space of fluorescent material, and the first encapsulation glue is the ring that refractive index is not less than 1.5
Oxygen tree fat, its sedimentation time is 24h, then removes the first encapsulation glue that fluorescent material is not goed deep on phosphor powder layer surface, makes its table
Face is smooth.
S4, the obtained semi-finished product of step S3 are placed in baking oven, first with 10 DEG C/min heating rate by the semi-finished product
Rise to 60 DEG C by room temperature, be incubated 2h, be then warming up to 90 DEG C with 10 DEG C/min heating rate, be incubated 4h, finally with 10 DEG C/
Min heating rate is warming up to 200 DEG C, is incubated 12h, the fluorescent adhesive layer 3 solidified.
S5, in fluorescent adhesive layer surface coating second glue is encapsulated, the second encapsulation glue water is silicone encapsulation glue, will
The semi-finished product for being coated with silicone encapsulation glue are placed in baking oven, are first coated with the second encapsulation glue with 10 DEG C/min heating rate
Semi-finished product rise to 80 DEG C by normal temperature, be incubated 3h, be then warming up to 200 DEG C with 10 DEG C/min heating rate, be incubated 9h, obtain
Top capsulation glue-line 4, the top capsulation glue-line 4 constitutes fluorescent film with fluorescent adhesive layer 3, and the thickness of the fluorescent film is 400 μm.
S6, removal UV adhesive films, fluorescent film is separated with substrate.
S7, in substrate surface pyrolysis adhesive film is pasted again, fluorescent film is inverted and is covered on the adhesive film, make first glimmering
Light bisque is located at top layer (upper surface of fluorescent film).
S8, in the first phosphor powder layer surface coated with adhesive, and bond on default position some LED flip chips,
The wavelength of transmitted light of the LED flip chip is 230nm, and obtained semi-finished product, which are placed in baking oven and toasted at 180 DEG C, makes bonding
Agent solidifies, and the ultraviolet light of the transmitting of luminescence chip 2 and the feux rouges of the first phosphor powder layer, the green glow of the second phosphor powder layer are combined, and are formed
White light emission, obtains the white light LED part semi-finished product of full wafer.
S9, the gap cutting full wafer white light LED part semi-finished product along LED chip, are divided into single LEDs, cut
The blade thickness cut is 2mm.
S10, single LEDs are adhered into pcb board 1 with tin cream, tin cream is solidified in reflow soldering, then around LED
Filling with sealant water, sealing glue can be more than or equal to 75% by its reflectivity for high viscosity silicones, by sealing glue baking
Solidification.
Sealing glue at the top of S11, removal LED chip, retains the sealing glue of side, obtains side sealant layer 5, so
Two adjacent LED gaps are cut along along pcb board afterwards, that is, obtain the luminous LED component of single one side.
Embodiment 3
The present embodiment provides a kind of one side luminous LED component method for packing, and it comprises the following steps：
S1, one substrate of offer, the substrate is aluminium sheet, and pyrolysis adhesive film is pasted in substrate surface, heavy using physical vapor
Area method deposits the first phosphor powder layer in pyrolysis glued membrane layer surface, and the first phosphor powder layer raw material is commercially available doping with rare-earth ions
Silicate fluorescent powder, its wavelength of transmitted light be 615nm, sedimentation time is 10min.
S2, using physical vaporous deposition the first phosphor powder layer surface deposit the second phosphor powder layer, second fluorescence
The raw material of bisque is sialon fluorescent powder, and its wavelength of transmitted light is 525nm, during sedimentation time is 5min, processes of physical vapor deposition,
Chamber pressure is 600Pa, and power is 300 watts.
S3, the second phosphor surface filling first encapsulate glue, by first encapsulation glue be added to the second phosphor powder layer
Surface, makes it flow deposition naturally, is filled in the space of fluorescent material, and the first encapsulation glue is that refractive index is poly- not less than 1.45
Urethane, its sedimentation time is 10h, then removes the first encapsulation glue that fluorescent material is not goed deep on phosphor powder layer surface, makes its surface
It is smooth.
S4, the obtained semi-finished product of step S3 are placed in baking oven, first with 5 DEG C/min heating rate by the semi-finished product by
Room temperature rises to 50 DEG C, is incubated 1h, is then warming up to 85 DEG C with 6 DEG C/min heating rate, 3h is incubated, finally with 4 DEG C/min's
Heating rate is warming up to 160 DEG C, is incubated 6h, the fluorescent adhesive layer 3 solidified.
S5, in fluorescent adhesive layer surface coating second glue is encapsulated, the second encapsulation glue water is polyurethane packaging plastic, will
The semi-finished product for being coated with polyurethane packaging plastic are placed in baking oven, are first coated with the second encapsulation glue with 6 DEG C/min heating rate
Semi-finished product rise to 65 DEG C by normal temperature, be incubated 1.5h, be then warming up to 175 DEG C with 7 DEG C/min heating rate, be incubated 5h, obtain
To top capsulation glue-line 4, the top capsulation glue-line 4 constitutes fluorescent film with fluorescent adhesive layer, and the thickness of the fluorescent film is
270mm。
S6, heating remove pyrolysis adhesive film, and fluorescent film is separated with substrate；
S7, in substrate surface pyrolysis adhesive film is pasted again, fluorescent film is inverted and is covered on the adhesive film, make first glimmering
Light bisque is located at top layer (upper surface of fluorescent film).
S8, in the first phosphor powder layer surface coated with adhesive, and bond on default position some LED flip chips,
The wavelength of transmitted light of the LED flip chip is 370nm, and obtained semi-finished product, which are placed in baking oven and toasted at 160 DEG C, makes bonding
Agent solidifies, and the ultraviolet light of the transmitting of luminescence chip 2 and the feux rouges of the first phosphor powder layer, the green glow of the second phosphor powder layer are combined, and are formed
White light emission, obtains the white light LED part semi-finished product of full wafer.
S9, the gap cutting full wafer white light LED part semi-finished product along LED chip, are divided into single LEDs, cut
The blade thickness cut is 1mm.
S10, single LEDs with elargol or other electroconductive binders are adhered into pcb board, then by binding agent baking-curing,
Then the filling with sealant water around LED, sealing glue can be more than or equal to 75% by its reflectivity for high viscosity silicones, will
Seal glue baking-curing.
Sealing glue at the top of S11, removal LED chip, retains the sealing glue of side, obtains side sealant layer 5, so
Two adjacent LED gaps are cut along along pcb board afterwards, that is, obtain the luminous LED component of single one side.
As disposable embodiment, can also after step 2 repeat step 2 operation, prepare Multi-layer phosphor powder.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. the luminous LED component of a kind of one side, it is characterised in that the device includes pcb board and along away from the pcb board direction
Luminescence chip, fluorescent adhesive layer and the top capsulation glue-line being sequentially arranged, the luminescence chip, fluorescent adhesive layer and top capsulation glue-line
Luminescence component is formed, the luminescence component side is provided with side sealant layer.
2. the luminous LED component of one side according to claim 1, it is characterised in that the fluorescent adhesive layer is by along away from institute
The first phosphor powder layer, the second phosphor powder layer and the encapsulation glue composition being filled in fluorescent material that luminescence chip is sequentially arranged are stated,
The wavelength of transmitted light scope of first phosphor powder layer is 500-680nm, the wavelength of transmitted light scope of second phosphor powder layer
For 500-680nm.
3. the method for packing of the luminous LED component of a kind of one side as claimed in claim 1 or 2, it is characterised in that including as follows
Step：
S1, in substrate surface adhesive film is pasted, the first phosphor powder layer is deposited in glued membrane layer surface using physical vaporous deposition；
S2, the first phosphor powder layer surface physics be vapor-deposited the second phosphor powder layer；
S3, in the second phosphor powder layer surface filling first glue is encapsulated, obtain fluorescent adhesive layer, the refraction of the first encapsulation glue
Rate is not less than 1.50；
The semi-finished product that S4, baking procedure S3 are obtained are to glue curing is encapsulated, the fluorescent adhesive layer solidified；
S5, the fluorescent adhesive layer surface coating second encapsulate glue, and baking-curing second encapsulation glue, obtain top capsulation
Glue-line, the top capsulation glue-line constitutes fluorescent film with fluorescent adhesive layer, and the refractive index of the second encapsulation glue is not less than 1.40；
S6, the removal adhesive film, fluorescent film is separated with substrate；
S7, in substrate surface adhesive film is pasted, fluorescent film is inverted and is covered on the adhesive film, the first phosphor powder layer is located at top
Face；
S8, the first phosphor powder layer surface bond LED chip, and toast fix LED chip.
4. the luminous LED component method for packing of one side according to claim 3, it is characterised in that after the step S8 also
Including：
The semi-finished product that S9, cutting step S8 are obtained, obtain single LEDs；
S10, single LEDs are bonded in pcb board and the filling with sealant water around LED, obtain side encapsulation glue-line, the sealing
The reflectivity of glue is not less than 75%；
Sealing glue at the top of S11, removal LED chip, two adjacent LED gaps are cut along along pcb board, obtain one side
Luminous LED component.
5. the luminous LED component method for packing of one side according to claim 4, it is characterised in that the physical vapor is sunk
Product forms the technological parameter of phosphor powder layer：Chamber pressure 100-1000Pa, 100-500 watts of power；First phosphor powder layer
Sedimentation time be 0.5-20min, the sedimentation time of second phosphor powder layer is 0.5-35min.
6. the luminous LED component method for packing of one side according to claim 5, it is characterised in that in the step S4
Baking process is：The semi-finished product are risen to 40-60 DEG C by room temperature with 1-10 DEG C/min heating rate first, 0.5- is incubated
2h, is then warming up to 65-90 DEG C with 1-10 DEG C/min heating rate, 0.5-4h is incubated, finally with 1-10 DEG C/min heating
Speed is warming up to 120-200 DEG C, is incubated 1-12h.
7. the luminous LED component method for packing of one side according to claim 6, it is characterised in that institute in the step S5
The process for stating baking-curing is：The semi-finished product of the second encapsulation glue are coated with by normal with 1-10 DEG C/min heating rate first
Temperature rise is incubated 1-3h to 50-80 DEG C, is then warming up to 100-200 DEG C with 1-10 DEG C/min heating rate, is incubated 1-9h.
8. the luminous LED component method for packing of one side according to claim 7, it is characterised in that after the step S2 also
Including repeat step S2, if the step of preparing dried layer phosphor powder layer.
9. the luminous LED component method for packing of one side according to claim 8, it is characterised in that the thickness of the fluorescent film
Spend for 100-400 μm.
10. the luminous LED component method for packing of one side according to claim 9, it is characterised in that the fluorescent material is silicon
Hydrochlorate, aluminate, fluoride, phosphate, nitride or sulphide fluorescent material, the wavelength of transmitted light of the LED chip is 230-
480nm；The temperature toasted in the step S8 is 120-180 DEG C.
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| CN201710566326.4A CN107275460A (en) | 2017-07-12 | 2017-07-12 | A kind of luminous LED component of one side and method for packing |
| PCT/CN2017/108376 WO2019010865A1 (en) | 2017-07-12 | 2017-10-30 | Single-sided illuminating led component and packaging method |
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| CN109273579A (en) * | 2018-11-22 | 2019-01-25 | 江西省晶瑞光电有限公司 | LED lamp bead preparation method |
| CN109709654A (en) * | 2019-02-27 | 2019-05-03 | 维沃移动通信有限公司 | Optical module, the production method of optical module and terminal device |
| CN109830474A (en) * | 2018-12-17 | 2019-05-31 | 江西省晶能半导体有限公司 | Glory LED core piece preparation method and glory LED lamp bead preparation method |
| CN109980068A (en) * | 2017-12-27 | 2019-07-05 | 深圳市聚飞光电股份有限公司 | LED component and packaging method, backlight module, liquid crystal display die set and terminal |
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| WO2019010865A1 (en) | 2019-01-17 |
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