CN107275422B - A kind of structure enhancing two-dimentional transient metal sulfide light absorption - Google Patents
A kind of structure enhancing two-dimentional transient metal sulfide light absorption Download PDFInfo
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- CN107275422B CN107275422B CN201710479913.XA CN201710479913A CN107275422B CN 107275422 B CN107275422 B CN 107275422B CN 201710479913 A CN201710479913 A CN 201710479913A CN 107275422 B CN107275422 B CN 107275422B
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- 229910052976 metal sulfide Inorganic materials 0.000 title claims abstract description 39
- 230000001052 transient effect Effects 0.000 title claims abstract description 38
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 18
- 230000031700 light absorption Effects 0.000 title claims abstract description 18
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052798 chalcogen Inorganic materials 0.000 claims description 3
- 150000001787 chalcogens Chemical class 0.000 claims description 3
- 230000004941 influx Effects 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000005945 translocation Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 abstract 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 8
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 8
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 230000032900 absorption of visible light Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of structure for enhancing two-dimentional transient metal sulfide light absorption, primary structure includes substrate, distributed bragg reflector mirror (DBR), two-dimentional transient metal sulfide and noble metal nano grating.DBR is made of the dielectric layer of two kinds of different refractivities, and absorption of the two-dimentional transient metal sulfide to specific band light can be enhanced by the refractive index and thickness that adjust dielectric layer.Finally in the metal nano grating of two-dimentional transient metal sulfide surface manufacturing cycle, on the one hand metal nano grating can scatter the light for not absorbed and being reflected back by DBR by two-dimensional material, on the other hand form local surface plasmon resonance with incident light and realize near field enhancing.The advantage of the invention is that significantly enhancing absorption of the two-dimentional transient metal sulfide to light.
Description
Technical field:
The invention belongs to field of photoelectric technology, are related to a kind of structure for enhancing two-dimentional transient metal sulfide light absorption.
Background technique:
The chemical formula of two-dimentional transient metal sulfide is MX2, M refer to transition metal element (such as: molybdenum, tungsten, niobium, rhenium,
Titanium), X refers to chalcogen (such as: sulphur, selenium, tellurium).In general, the sandwich of X-M-X a kind of is presented in single layer transient metal sulfide
The Van der Waals for of structure, the structure interlayer is very weak, but has very firm covalent bond in plane.Therefore, blocky transition gold
The nanoscale twins of single layer or multilayer can be stripped into applied to various devices by belonging to sulfide.
In recent years, two-dimentional transient metal sulfide caused numerous science due to its unique electrical and optical performance
The extensive concern of family.When two-dimentional transient metal sulfide is transformed into single layer from multilayer, band structure is also changed, by
Spin coupling between paddy has occurred at direct band gap in indirect band gap transitions.These peculiar electrical and optical properties push
Its transistor, sensor and in terms of application.However, due to its ultra-thin material property, two-dimentional transition gold
Category sulfide is lower to the absorption of light, and which has limited it in the high performance phototube such as solar energy reforming unit and photodetector
Application in part.
A kind of structure enhancing two-dimentional transient metal sulfide light absorption of the present invention, can significantly increase two-dimentional mistake
Cross the light absorption of metal sulfide.Structure of the invention is combined with photoelectric device, is expected to improve two-dimentional transient metal sulfide
The performance of photoelectric device.
Summary of the invention:
Technical problem to be solved by the present invention lies in provide a kind of knot for enhancing two-dimentional transient metal sulfide light absorption
Structure, the structure can effectively enhance absorption of the two-dimentional transient metal sulfide to light.
The technical problems to be solved by the invention are realized using following technical scheme:
A kind of structure enhancing two-dimentional transient metal sulfide light absorption, the enhancing light absorption structure includes substrate, point
Cloth Bragg mirror (DBR), two-dimentional transient metal sulfide layer, noble metal nano grating, the DBR includes two kinds of differences
The dielectric layer of refractive index, using ABAB ..., periodic structure is arranged.
Substrate described in the structure is selected from one of sapphire, silicon, gallium nitride, GaAs, aluminium nitride or spinelle.
Transition metal element in two dimension transient metal sulfide described in the structure is one of molybdenum, tungsten, niobium, rhenium, titanium,
Chalcogen is one of sulphur, selenium, tellurium.
Noble metal nano grating material described in the structure is one of gold or silver.
The beneficial effects of the present invention are: two-dimentional transient metal sulfide is smaller to the absorptivity of single incident light, it will be two-dimentional
Transient metal sulfide is transferred on dbr structure, and unabsorbed the reflection of generation incident light can be made to return two-dimentional transient metal sulfide,
Realization absorbs again.
Noble metal grating, the local surface plasma of noble metal nano grating are prepared on two-dimentional transient metal sulfide
Resonance effects can effectively enhance near field light absorption；The scattering enhancing absorption of noble metal nano grating mainly utilizes
Scattering process of the light around noble metal grating is penetrated, light path of the incident light in DBR layer is increased, causes light and two-dimentional transition metal
Sulfide it is multiple effect and improve absorb (as shown in Figure 1).
By adjusting the medium refraction index and thickness of dbr structure, two-dimentional transient metal sulfide may be implemented to certain wave
The influx and translocation of Duan Guang.The reflection bandwidth of DBR are as follows:Wherein, nHAnd nLRespectively dbr structure
In high refractive index medium layer and low refractive index dielectric layer refractive index.Relative index of refraction of the reflection bandwidth with membrane systemHave
It closes,Bigger, reflection bandwidth is bigger.The central wavelength lambda of given reflection bandwidth0And dielectric material refractive index n, DBR dielectric layer
ThicknessTherefore, by adjusting the refractive index and thickness of two kinds of materials of dbr structure, two-dimentional transition metal may be implemented
Sulfide is on specific band to the influx and translocation of light.
Detailed description of the invention
Fig. 1 is that noble metal nano grating scattering enhances light absorption schematic diagram；
Fig. 2 is the structural schematic diagram for enhancing two-dimentional transient metal sulfide light absorption；
Fig. 3 is absorptivity comparison of the single layer molybdenum disulfide in different structure；
Wherein, 1- light, 2- noble metal nano grating, 3- two dimension transient metal sulfide, 4-DBR structure, 4A- SiO2
Dielectric layer, 4B- are GaAs dielectric layer, 5- substrate.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
Single layer molybdenum disulfide has excellent electrical and optical performance as one of two-dimentional transient metal sulfide,
There is relatively broad application in optoelectronic devices.Meanwhile molybdenum disulfide has most of two-dimentional transient metal sulfides
Characteristic feature.So introducing the present invention to the absorption of visible light using structure enhancing single layer molybdenum disulfide.
According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted that attached drawing is equal
Using very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating the embodiment of the present invention
Purpose.
Above-mentioned enhancing single layer molybdenum disulfide specifically prepares the structure of visible absorption by following steps:
1, substrate 5 is provided, it is preferred that the substrate is Si substrate.
2, dbr structure 4 is prepared on above-mentioned substrate 5.In the present embodiment, dbr structure is the GaAs/SiO in 4 periods2, folding
The rate of penetrating is respectively 3.57,1.46, and thickness is respectively 36.8 and 90nm.3, it shifts on molybdenum disulfide 3 to above-mentioned dbr structure 4.
4, noble metal nano grating 2 is prepared on above-mentioned 3 surface of molybdenum disulfide, in this example, the nanometer grating is week
Phase is the silver-colored grating of 50nm, width 30nm, high 20nm.
It is final to realize that single layer molybdenum disulfide significantly increases the absorption of light by the effect of DBR and silver nanoparticle grating.
The basic principles, main features and advantages of the invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and the above embodiments and description only describe originals of the invention
Reason, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes and improvements
It all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its equivalent circle
It is fixed.
Claims (4)
1. a kind of structure for enhancing two-dimentional transient metal sulfide light absorption, which is characterized in that the structure includes substrate, distribution
Formula Bragg mirror (DBR), two-dimentional transient metal sulfide and noble metal nano grating；The Distributed Bragg Reflection
Portion on substrate is arranged in mirror (DBR)；The two-dimentional transient metal sulfide is arranged on distributed bragg reflector mirror；It is described
Noble metal nano grating be arranged on two-dimentional transient metal sulfide surface；The two dimension transient metal sulfide is single layer knot
Structure, the distributed bragg reflector mirror (DBR) include the dielectric layer of two kinds of different refractivities, and using ABAB ..., periodic structure is arranged
Column；The refractive index of material and thickness can be adjusted in described distributed bragg reflector mirror (DBR) structure, can be realized
Two-dimentional transient metal sulfide is on specific band to the influx and translocation of light, the reflection bandwidth of DBR are as follows:
Wherein, nHAnd nLThe refractive index of high refractive index medium layer and low refractive index dielectric layer respectively in dbr structure.
2. a kind of structure for enhancing two-dimentional transient metal sulfide light absorption according to claim 1, which is characterized in that institute
Any one of the substrate stated in sapphire, silicon, gallium nitride, GaAs, aluminium nitride or spinelle.
3. a kind of structure for enhancing two-dimentional transient metal sulfide light absorption according to claim 1, which is characterized in that institute
The material for the noble metal nano grating stated is gold or silver.
4. a kind of structure for enhancing two-dimentional transient metal sulfide light absorption according to claim 1, which is characterized in that institute
The transition metal element in two-dimentional transient metal sulfide is stated as any one in molybdenum, tungsten, niobium, rhenium, titanium, chalcogen is
Sulphur, selenium, any one in tellurium.
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| CN109980038B (en) * | 2017-12-27 | 2021-03-23 | 海思光电子有限公司 | Photoelectric detector and preparation method thereof |
| CN111769201B (en) * | 2019-03-29 | 2023-06-09 | 李奕贤 | Two-dimensional semiconductor device, photoelectric unit, and method for manufacturing two-dimensional semiconductor device |
| CN109884063B (en) * | 2019-04-24 | 2021-08-20 | 杭州翔毅科技有限公司 | Acquisition structure for liquid sensor |
| CN110196464B (en) * | 2019-07-01 | 2022-07-29 | 江南大学 | Method for realizing ultra-wideband light absorption and composite microstructure |
| CN111223957B (en) * | 2020-02-24 | 2023-03-24 | 电子科技大学 | Fabry Luo Gongzhen near-infrared thermal electron photoelectric detector and preparation method thereof |
| CN112255716B (en) * | 2020-11-24 | 2021-12-28 | 江南大学 | Efficient light absorption device based on structural symmetry defect and preparation method and application thereof |
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| CN102100005A (en) * | 2008-07-14 | 2011-06-15 | 惠普发展公司，有限责任合伙企业 | Hybrid guided-mode resonance filter and method employing distributed Bragg reflection |
| CN104218443A (en) * | 2014-08-20 | 2014-12-17 | 鲍小志 | Two-dimensional stratified material based practical saturable absorber and production method thereof |
| CN104777532A (en) * | 2015-04-03 | 2015-07-15 | 中国科学院上海光学精密机械研究所 | Ultra-narrow-band TE (transverse electric) polarizing spectrum selective absorber based on cascaded fiber grating structure |
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| WO2006078319A1 (en) * | 2005-01-19 | 2006-07-27 | Massachusetts Institute Of Technology | Light trapping in thin film solar cells using textured photonic crystal |
| CN106449806A (en) * | 2016-09-14 | 2017-02-22 | 北京邮电大学 | Narrow-linewidth and high-performance tunable optical detector based on non-periodic sub-wavelength grating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102100005A (en) * | 2008-07-14 | 2011-06-15 | 惠普发展公司，有限责任合伙企业 | Hybrid guided-mode resonance filter and method employing distributed Bragg reflection |
| CN104218443A (en) * | 2014-08-20 | 2014-12-17 | 鲍小志 | Two-dimensional stratified material based practical saturable absorber and production method thereof |
| CN104777532A (en) * | 2015-04-03 | 2015-07-15 | 中国科学院上海光学精密机械研究所 | Ultra-narrow-band TE (transverse electric) polarizing spectrum selective absorber based on cascaded fiber grating structure |
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