CN104218443A - Two-dimensional stratified material based practical saturable absorber and production method thereof - Google Patents
Two-dimensional stratified material based practical saturable absorber and production method thereof Download PDFInfo
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Abstract
The invention relates to a two-dimensional stratified material based practical saturable absorber and a production method thereof, and belongs to the field of saturable absorbers of lasers. The two-dimensional stratified material based practical saturable absorber comprises a substrate, a high-reflection layer, a saturable absorption layer and a functional layer. One end face of the functional layer is connected with the saturable absorption layer, one end face of the saturable absorption layer is connected with the high-reflection layer, and one end face of the high-reflection layer is connected with the substrate. By the two-dimensional stratified material based practical saturable absorber and the production method thereof, application of the lasers, such as Q-switching, mode locking and optical signal processing, is realized. By the high-reflection layer formed by composite materials, absorption loss is reduced and reflection rate is increased, and optimal material combinations can be found in terms of different wave lengths.
Description
Technical field
The present invention relates to a kind of practical saturable absorption device based on two-dimensional layer material and preparation method thereof, belong to the saturable absorber field of laser.
Background technology
Adopt the pulse laser of locked mode or Q-regulating technique, there is peak power high, the feature that pulse duration is narrow, have and important application in fields such as industrial micro Process, medical treatment, ultrafast process scientific research and optical communications.Realize the technology of locked mode and tune Q, can be divided into initiatively and passive two classes, wherein, in laser cavity, insert saturable absorber part, realize the method for passive mode locking and tune Q, owing to not needing extra electric field or light field modulation, efficiently convenient, and cheap, be a kind of widely used method.Main fiber laser mode-locking device based semiconductor saturable absorbing mirror (SESAM) used in the market.But there is a lot of very formidable shortcoming in semiconductor saturable absorbing mirror.First, SESAM needs complexity and the manufacturing system based on clean room of costliness, and manufacturing process is complicated, and cost is high; Secondly, due to the intrinsic band gap of III-IV race's semiconductor, saturation-absorption spectrum narrow scope; The light injury threshold of the three, SESAM is also very low, is difficult to be applied in high power laser light field.In recent years, Single Walled Carbon Nanotube (SWCNT) and take Graphene as the two-dimensional layer material of representative be subject to this field to pay close attention to the novel saturable absorber material that two more classes substitute SESAM.SWCNT have the electron relaxation time fast, be easy to make, cost is low, the advantage that light injury threshold is high, but the accurate control that its uneven handedness is verified in the character of saturable absorber exists intrinsic problem, and limits the bandwidth of saturated absorption.
Since Graphene saturable absorber was found from 2009, with advantages such as its distinctive ultra wide wave band operation wavelength (visible waveband can work to microwave band), ultrafast the electron relaxation time, the considerable light modulation degree of depth, low saturation thresholds, studied widely and paid close attention to.At present, the manufacture method of Graphene saturable absorber mainly: in fiber laser, the method that the transfer of employing chemistry or optics deposit, by direct for Graphene and FC/PC optical fiber head combination, forms optical fiber head/Graphene/optical fiber head sandwich structure; In solid state laser, adopt chemistry transfer, or the method for spin coating, by Graphene transfer in the transparent substrates of quartz plate one class, form transmission-type saturable absorption device; Or Graphene is placed on gold, silver and bronze aluminium one metalloid reflector, form reflective saturable absorption device.This several method has certain limitation:
1) reflective layer reflects rate is not high enough, and absorption loss is large.High-performance laser needs high reflectivity and pole low-loss, thus requires higher to materials and structures.Single metal is as reflector, although metallic reflective coating has higher reflectivity, has certain absorbability, affects the quality of light.So metallic reflective coating is not suitable for the little High-performance lasers field of the absorption loss of requirement rete; Find after deliberation, the reflectivity of single metallic reflective coating is often difficult to the reflectivity reaching multilayer all dielectric high-reflecting film and medium/metal reflectance coating, for high-reflecting film, even if reflectivity improves 0.01%, also very large contribution is had to power output, such as multilayer all dielectric high-reflecting film reflectivity can reach more than 99%, and general metal film is difficult to reach so high reflectivity; From ultraviolet to infrared equiwavelength, different wave length often needs specific aim to prepare high-performance high-reflecting film, and single metal film is difficult to satisfied such requirement; And most of single metal film easy chemically reactive and go bad in atmosphere, cause reflectance coating instability.
2) most of manufacture method all needs manually to shift in aqueous.Larger and the manually-operated uncertainty of surface tension due to water, transfer process can inevitably destroy Graphene or other two-dimensional layer materials the continuity of integrality, cause device yield not high
3) single metallic reflector and basalis, between saturated absorbing layer and reflector tack difference and mechanical strength low, and easily absorb water, thus stability and life-span receive impact.
4) in some specific occasions, saturated absorbing layer cannot obtain merely the optical performance parameter of particular demands with grapheme material, is difficult to realize regulation and control to the modulation depth of saturated absorption material and optical excitation relaxation time.
5) resistant to mechanical damage of saturated absorbing layer and whole device and photothermal injury's threshold value have much room for improvement.
6) part adopts transmission mode, is directly inserted in chamber, adds the loss in chamber, be not suitable for the laser of low gain.
Summary of the invention
The present invention is directed to above-mentioned deficiency and provide a kind of practical saturable absorption device based on two-dimensional layer material and preparation method thereof.
The present invention adopts following technical scheme:
Practical saturable absorption device based on two-dimensional layer material of the present invention, comprises substrate, high anti-layer, saturable absorption layer, functional layer; One end face of described functional layer is connected with saturable absorption layer, and an end face of saturable absorption layer is connected with the anti-layer of height, and an end face of high anti-layer is connected with substrate.
Practical saturable absorption device based on two-dimensional layer material of the present invention, is provided with functional layer two between the anti-layer of described height and saturable absorption layer.
Practical saturable absorption device based on two-dimensional layer material of the present invention, is provided with functional layer three between the anti-layer of described height and substrate.
Practical saturable absorption device based on two-dimensional layer material of the present invention, is provided with functional layer two between the anti-layer of described height and saturable absorption layer; High anti-layer other end and and substrate between be provided with functional layer three.
Practical saturable absorption device based on two-dimensional layer material of the present invention, the other end of substrate is provided with anti-reflection layer.
Practical saturable absorption device based on two-dimensional layer material of the present invention, one end face of described substrate arranges high anti-layer, high anti-layer arranges saturable absorption layer relative to the other end of substrate, saturable absorption layer arranges functional layer relative to the other end of the anti-layer of height, functional layer arranges high anti-layer two relative to the other end of saturable absorption layer, high anti-layer two is provided with Nd-doped yttrium vanadate layer relative to the other end of functional layer, and Nd-doped yttrium vanadate layer is provided with anti-reflection layer two relative to the other end of the anti-layer two of height.
Practical saturable absorption device based on two-dimensional layer material of the present invention, the anti-layer of described height is made up of two or more combination of materials in metal material or semi-conducting material or dielectric material;
Described metal material adopts: gold or silver or copper or aluminium or nickel or germanium or chromium;
Described semi-conducting material adopts AlGaAs or InGaAs or the arsenide such as GaAs or aluminium arsenide or silicon;
Described dielectric material adopts oxide or fluoride or sulfide or nitride or selenides.
Described saturated absorbing layer is by Graphene, Graphene derivative, BN, MoS
2, WS
2, WSe
2, Bi
2se
3, Bi
2te
3or Sb
2te
3individual layer, bilayer or plural layers form, or by Graphene, Graphene derivative, BN, MoS
2, WS
2, WSe
2, Bi
2se
3, Bi
2te
3or Sb
2te
3in two or more lamination heterostructure film.
Practical saturable absorption device based on two-dimensional layer material of the present invention, functional layer is combined by a kind of or two kinds or multiple material and forms.
Practical saturable absorption device based on two-dimensional layer material of the present invention, the substrate of described saturated absorption device or anti-reflection layer are placed on the copper base of copper base or center drilling;
Functional layer or the anti-reflection layer of described saturated absorption device are connected with optical fiber pigtail end face; Described substrate is made up of glass or silicon or silicon dioxide or carborundum or quartz or sapphire or GaAs, aluminium arsenide or fluoride or selenides or medium of oxides material.
The preparation method of the practical saturable absorption device based on two-dimensional layer material of the present invention, it is characterized in that, preparation process is as follows:
Periodic structure film basalis plating several layers or multilayer two kinds or more of different refractivity material is formed high anti-layer by step 1), then carries out nitrogen plasma treatment to the anti-layer of height;
Step 2) on the anti-layer of the described height through plasma treatment, plate one deck copper or nickel as metal catalyst layer, adopt the method for chemical vapour deposition (CVD) or plasma activated chemical vapour deposition or low pressure chemical vapour deposition or inductively coupled plasma vapour deposition, growth or evaporation is a kind of or saturated absorption material not of the same race forms saturated absorbing layer on metal catalytic layer, adopts the method for spin coating spin coating one deck polymethyl methacrylate protective layer on graphene film subsequently;
Step 3) uses etching liquid to carry out chemical etching to metal catalyst layer, and metal catalyst layer is complete by chemical etching, and through high-temperature process, the realization that adheres to each other of high anti-layer and saturable absorption layer is close to;
Step 4) adopts the chemical reagent such as acetone to soak again, removes polymethyl methacrylate protective layer, allows outside saturated absorbing layer is exposed to, then heats in inert gas and thoroughly remove polymethyl methacrylate;
Step 5) is plated on described saturated absorbing layer, shift or grow an one functional layer, forms saturated absorbing body device.
Beneficial effect
Practical saturable absorption device based on two-dimensional layer material provided by the invention and preparation method thereof, realize tune Q and the application such as locked mode, optical signal prosessing of laser, the more important thing is that performance Graphene and other two-dimensional layer saturated absorption material laminate heterostructures can regulate effect of modulation depth neatly.
The present invention proposes the anti-layer of height that composite material builds, such as, introduce multiple layer metal/medium or the high anti-layer of multilayer all dielectric, reduce absorption loss, improve reflectivity, most optimum materials can be found to combine at different wave length.
The present invention creatively arranges different functional layers, improving overall device antibody Monoclonal threshold value, improve rete device stability, improve rete and device lifetime, raising optical property, expand whole device function etc. in made useful achievement, device performance will be made closer to commercial Application.
The present invention uses the method for chemical vapor deposition (CVD) or PCVD (PECVD) or low pressure chemical vapour deposition (LPCVD) or inductively coupled plasma vapour deposition (ICPCVD), and the physicochemical characteristics according to each layer selects deposition process.Chemical treatment is carried out to the functional layer on the anti-layer of height or high anti-layer simultaneously, direct growth or evaporation Graphene or arrange that other two-dimensional material form saturable absorption layer in the Catalytic Layer of the anti-layer of height, etch away Catalytic Layer subsequently, the method of such chemical shift is eliminated growing graphene or is arranged that other two-dimensional material form the metallic catalyst on saturable absorption layer, and saturated absorbing layer is deposited directly on high anti-layer.This transfer method is compared to the transfer of traditional wet method and dry method transfer, the most direct advantage is just that of avoiding artificial transfer, therefore avoid the artificial damage brought in transfer process to greatest extent, ensure that quality and the integrality of Graphene and other two-dimensional layer materials.
Device of the present invention can develop into efficient transmission-type, reflection-type, coupling output type, can with the device of technical solution of the present invention development from ultraviolet to middle infrared wavelength, even can expand to wave-length coverage widely, expand the application of the two-dimensional material such as Graphene in fields such as laser Q-switching, locked mode, optical signal prosessing greatly.
Accompanying drawing explanation
Fig. 1 is underlying structure figure of the present invention;
Fig. 2 is the underlying structure figure of the high anti-layer of plating of the present invention;
Fig. 3 is the underlying structure figure of evaporation Catalytic Layer on high anti-layer after plasma treatment of the present invention;
Fig. 4 be the present invention arrange successively from bottom to up substrate, high anti-layer, the structure chart of Catalytic Layer and saturated absorbing layer;
Fig. 5 is the structure chart that the present invention arranges substrate, high anti-layer, Catalytic Layer, saturated absorbing layer and PMMA protective layer from bottom to up successively;
Fig. 6 is the structure chart in Fig. 5 after sandwich construction etching Catalytic Layer;
Fig. 7 is the structure chart in Fig. 6 after sandwich construction removing PMMA protective layer;
Fig. 8 be sandwich construction in Fig. 7 saturated absorbing layer on arrange the structure chart after an one functional layer;
Fig. 9 is typical saturable absorption device structural representation;
Figure 10 is high-performance high threshold saturable absorption device structural representation;
Figure 11 is resonance saturable absorbing mirror structural representation;
Figure 12 is saturable output coupling mirror structural representation;
Figure 13 is the device architecture schematic diagram Fig. 9 or Figure 10 arranging successively high-reflecting film, Nd-doped yttrium vanadate, antireflective film are formed;
Figure 14 is the saturable absorption device together with fibre-optic package;
Figure 15 is the saturable absorption device be positioned on copper base;
Figure 16 is positioned over the saturable absorption device on center drilling copper base.
In figure, 1 is substrate, and 2 is high anti-layers, and 3 is saturable absorption layers, and 4 is functional layers, and 5 is functional layers two, and 6 is functional layers three, and 7 is anti-reflection layers, and 8 are high anti-layers two, 9 is Nd-doped yttrium vanadate layers, and 10 is anti-reflection layers two.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in more detail:
As shown in the figure: the practical saturable absorption device based on two-dimensional layer material provided by the invention, comprises substrate 1, high anti-layer 2, saturable absorption layer 3, functional layer 4; One end face of described functional layer 4 is connected with saturable absorption layer 3, and an end face of saturable absorption layer 3 is connected with the anti-layer 2 of height, an end face of high anti-layer 2 and substrate 1) be connected.
Functional layer 25 is provided with between high anti-layer 2 and saturable absorption layer 3.Functional layer 36 is provided with between high anti-layer 2 and substrate 1.
Functional layer 25 is provided with between high anti-layer 2 and saturable absorption layer 3; High anti-layer 2 other end and and substrate 1 between be provided with functional layer 36.
The other end of substrate 1 is provided with anti-reflection layer 7.
One end face of substrate 1 arranges high anti-layer 2, high anti-layer 2 arranges saturable absorption layer 3 relative to the other end of substrate 1, saturable absorption layer 3 arranges functional layer 4 relative to the other end of the anti-layer 2 of height, functional layer 4 arranges high anti-layer 28 relative to the other end of saturable absorption layer 3, high anti-layer 28 is provided with Nd-doped yttrium vanadate layer 9 relative to the other end of functional layer 4, and Nd-doped yttrium vanadate layer 9 is provided with anti-reflection layer 2 10 relative to the other end of the anti-layer 28 of height.
The substrate 1 of saturated absorption device or anti-reflection layer 7 are placed on the copper base of copper base or center drilling; Functional layer 4 or the anti-reflection layer 10 of saturated absorption device are connected with optical fiber pigtail end face; Substrate 1 is made up of glass or silicon or silicon dioxide or carborundum or quartz or sapphire or GaAs, aluminium arsenide or calcirm-fluoride or selenides or medium of oxides material.
High anti-layer 2 is formed by two kinds or two or more different refractivity combination of materials, these materials can be chosen from metal, semi-conducting material, dielectric material, typical material is as metal materials such as gold, silver, copper, aluminium, nickel, germanium, chromium, arsenide or the silicon such as AlGaAs, InGaAs, GaAs, aluminium arsenide, oxide, fluoride, sulfide, nitride, selenides etc.Film structure and the thickness of high anti-layer need adjustment according to material and function, can be symmetric periodic structure, also can be asymmetrical period structure, and thickness can be uniform, also can be heterogeneous, that is be not limited to the preparation method of Bragg mirror.
Substrate 1 typical material is glass, silicon, silicon dioxide, carborundum, quartz, sapphire, semi-conducting material as GaAs, aluminium arsenide, calcirm-fluoride, selenides, medium of oxides material etc.
Saturated absorbing layer 3 is typical in Graphene, Graphene derivative, BN, MoS
2, WS
2, WSe
2, Bi
2se
3, Bi
2te
3or Sb
2te
3form Deng the individual layer of two-dimensional layer material, bilayer or plural layers, or Graphene, Graphene derivative, BN, MoS
2, WS
2, WSe
2, Bi
2se
3, Bi
2te
3or Sb
2te
3deng a kind of or two or more lamination heterostructure film in two-dimensional layer material.
Functional layer 4 or 5 or 6 is configured for different functions by a kind of, two kinds or multiple material, and common materials is ZnO, SnO
2, Al
2o
3, SiO
2,y
2o
3,zrO
2,tiO
2,hfO
2,nb
2o
5,gaAs, ZnS, ZnSe, Si
3n
4, MgF
2, Ta
2o
5, Si, YF
3, YbF
3, As
2se
3deng medium or semi-conducting material; medium or semiconductive thin film have specific thickness; its function comprises raising laser damage threshold; or protection saturated absorbing layer; or improve device optical characteristic; or mate with light tail optical fiber or substrate refractive index, or be the secondary high reflection layer of relative antiradar reflectivity, or extended device function etc.Functional layer is indispensable in whole device, and the same with the anti-layer of height or saturated absorbing layer, functional layer has independently using value, for the performance improving whole device plays decisive role in majority application.
High anti-layer 2 adjusts as required with the materials and structures of the anti-layer 28 of height, can be the same or different.
Anti-reflection layer 2 adjusts as required with the materials and structures of anti-reflection layer 28, can be the same or different.
Functional layer surface above saturable absorption material or saturated absorbing layer is packaged together with optical fiber pigtail end face, forms the saturated absorption device of coupling fiber.
Substrate 1 or substrate 1 time functional layer are attached to the reflection-type saturable absorption device that copper substrate can be formed Space Coupling.Increase dielectric layer above saturated absorbing layer, and increase anti-reflection layer under the layer of base, anti-reflection layer surface attachment can be formed reflectivity or transmission-type saturable absorption device on the copper base of center drilling.
In view of the present invention above substrate layer or high anti-layer or saturated absorbing layer or under can increase corresponding functional layer; method difference is the step of many plated films once or several times; there is no exhaustive all possible technical scheme in upper figure, but should not limit the scope of the invention with this.Below in conjunction with embodiment and accompanying drawing, the present invention is further described, and Fig. 1-8 illustrates that a kind of device be made up of substrate layer, high anti-layer, saturated absorbing layer, functional layer is successively the exemplary manufacturing process that example illustrates the practical saturable absorption device of two-dimensional layer material of the present invention:
Step 1), with reference to the manufacture method making Bragg mirror, the non-optical glass substrate layer of Fig. 1 plates multilayer different refractivity material HfO
2and SiO
2periodic structure, form high reflection layer as shown in Figure 2, and plasma pretreatment carried out to high reflection layer, to ensure this high anti-layer and to grow afterwards or the saturated absorption adheres of evaporation, hinder it to come off;
Step 2) on described high reflection layer with the metal catalyst layer of method evaporation one deck nickel such as magnetron sputtering or copper as shown in Figure 3.Below by the physicochemical characteristics according to different reflector, select diverse ways.If adopt conventional chemical vapor deposition (CVD) method in this example, temperature is more than 1000 degree, substrate or other layers meeting melting, the method (PECVD) of therefore using plasma chemical vapour deposition (CVD), on metal catalytic layer, low-temperature epitaxy Graphene saturable absorption layer is as Fig. 4.Concrete grammar is as follows: high anti-layer puts into PECVD stove after evaporation catalyst, furnace temperature is elevated to 500-1000 DEG C, and utilizes hydrogen gas plasma (50-300 W) to its process 1-20 minute at this temperature, and now furnace pressure is 30-100 mtorr.Then regulate the flow of hydrogen and methane to be respectively 50-200 sccm and 1-50 sccm and grow 1-50 minute (plasma power is 50-300 W, 30-100mtorr).Turn off methane, growth terminates, cooling.Adopt subsequently the method for spin coating on Graphene saturable absorption layer spin coating one deck polymethyl methacrylate (PMMA) protective layer as Fig. 5.
The composite membrane of Fig. 5 is put into the ammonium sulfate of 0.11-0.9 M to step 3) or the ferric chloride solution of 1-5M carries out chemical etching to copper or nickel.After copper etches away 160-200 degrees Centigrade 11-30 minute to remove moisture wherein.Because carried out plasma pretreatment to high reflection layer before, can bond and not be separated from each other between high reflection layer and saturated absorbing layer, metal catalyst layer is complete by chemical etching, and through high-temperature dehumidification, high reflection layer and saturable absorption layer realize being close to adhering to each other as Fig. 6.
Step 4) adopts the chemical reagent such as acetone to soak again; remove polymethyl methacrylate protective layer; more than 250-400 degree Celsius, inert gas, as heated more than 30 minutes in the protective atmosphere of argon gas thoroughly to remove the residue of PMMA, allows saturated absorbing layer be exposed to outer as Fig. 7 again.
Step 5) is plated on described saturated absorbing layer, shift or grow an one functional layer, forms saturated absorbing body device as Fig. 8
Evaporation high reflection layer or functional layer, metal catalyst layer or the saturable absorption layer on described basalis such as electron-beam evaporation, ion beam assisted depositing, reactive ion sputtering sedimentation, Dual ion beam sputtering deposition, molecular beam epitaxial growth method, magnetron sputtering method, sol-gel process, thermal evaporation, Sol-Gel method is used in described step 1 and 2.
With in the process of PECVD growing graphene in step 2, preferred condition furnace temperature is elevated to or 660-670 or 671-680 or 681-690 or 700-710 DEG C, and utilize hydrogen gas plasma (power is point value between 100-200 W) to its process 15-20 minute at this temperature, now furnace pressure is point value between 30-40mtorr.Then regulate the flow of hydrogen and methane to be respectively 100-130 sccm and 11-30 sccm and grow 6-30 minute (plasma power is point value between 160-250 W, and air pressure is point value between 55-85mtorr).Turn off methane, growth terminates, cooling.
When the anti-layer of the height making similar Bragg mirror of the material of different refractivity, two kinds or more of material can be used, metal material and dielectric material can be comprised, also can the dielectric material of high, medium and low three kinds of different refractivities, also can be two media material and a kind of metal material, can be even that two high-reflecting films form combined films.The material thickness forming each sublayer of high anti-layer or functional layer not necessarily strictly equals 1/4th operation wavelengths or 1/2nd operation wavelengths, can need suitably to adjust increase or adjust and reduce thickness according to property regulation.
Fig. 9 is a kind of typical saturable absorption device, and saturated absorbing layer arranges functional layer, and such as functional layer is made up of medium, can protect absorbed layer, reduces absorption loss, improves device damage threshold value, or anti-reflection layer, or secondary high reverse--bias combined films.On the basalis or high reflection layer of Fig. 9, increase functional layer form two kinds of different structures, also belong to embodiments of the invention, because of length reason, do not do exhaustive.
Figure 10 is a kind of high-performance high threshold saturable absorption device, substrate and reflector increases functional layer, can improve Energy distribution and the Electric Field Distribution in base and reflector, improves device damage threshold value, increases the mechanical strength between each layer and bonding force.
Figure 11 is a kind of resonance saturable absorbing mirror, compare Fig. 9, the device of Figure 11 is on saturated absorbing layer, arrange the combined reflected film of a group relatively low, the combined films of relative antiradar reflectivity can identical from high-reflecting film material (also can be different) and the number of plies is different, such saturable absorption device has higher saturated absorption, narrower bandwidth, lower saturated absorption energy density.
Figure 12 is a kind of saturable output coupling mirror, compares Fig. 9, and the high anti-layer reflectivity of Figure 12 device is relatively lower, substrate increases an anti-reflection layer, part light can be allowed like this to reflect back, also can allow part light from substrate through output.
Figure 13 will arrange above Fig. 9 or Figure 10 that device that high-reflecting film, Nd-doped yttrium vanadate, antireflective film are formed may be used for micro-slice laser and adjusts Q or locked mode and optical signal prosessing successively.
Arbitrary saturable absorption device of Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13 and optical fiber are bonded together by Figure 14, and functional layer and the fiber end face of being close to saturable absorption layer are fixed together, and form the saturable absorption device of coupling fiber
Arbitrary saturable absorption device of Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13 and copper base are fixed on necessarily by Figure 15, functional layer under substrate or base is close to copper cardinal extremity face, form the saturable absorption device of Space Coupling, because of length reason, only draw a kind of instance graph.
The copper base of the arbitrary saturable absorption device centering boring in Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13 is fixed together by Figure 16, and the functional layer under substrate or base is close to copper cardinal extremity face, because of length reason, only draws a kind of instance graph.
Claims (10)
1. based on the practical saturable absorption device of two-dimensional layer material, it is characterized in that: comprise substrate (1), high anti-layer (2), saturable absorption layer (3), functional layer (4); One end face of described functional layer (4) is connected with saturable absorption layer (3), and an end face of saturable absorption layer (3) is connected with the anti-layer of height (2), and an end face of high anti-layer (2) is connected with substrate (1).
2. the practical saturable absorption device based on two-dimensional layer material according to claim 1, is characterized in that: be provided with functional layer two (5) between the anti-layer of described height (2) and saturable absorption layer (3).
3. the practical saturable absorption device based on two-dimensional layer material according to claim 1, is characterized in that: be provided with functional layer three (6) between the anti-layer of described height (2) and substrate (1).
4. the practical saturable absorption device based on two-dimensional layer material according to claim 1, is characterized in that: be provided with functional layer two (5) between the anti-layer of described height (2) and saturable absorption layer (3); High anti-layer (2) other end and and substrate (1) between be provided with functional layer three (6).
5. the practical saturable absorption device based on two-dimensional layer material according to claim 1 or 2 or 3 or 4, is characterized in that: the other end of substrate (1) is provided with anti-reflection layer (7).
6. the practical saturable absorption device based on two-dimensional layer material according to claim 1 or 2 or 3 or 4, it is characterized in that: an end face of described substrate (1) arranges high anti-layer (2), high anti-layer (2) arranges saturable absorption layer (3) relative to the other end of substrate (1), saturable absorption layer (3) arranges functional layer (4) relative to the other end of the anti-layer of height (2), functional layer (4) arranges high anti-layer two (8) relative to the other end of saturable absorption layer (3), high anti-layer two (8) is provided with Nd-doped yttrium vanadate layer (9) relative to the other end of functional layer (4), Nd-doped yttrium vanadate layer (9) is provided with anti-reflection layer two (10) relative to the other end of the anti-layer two (8) of height.
7. the practical saturable absorption device based on two-dimensional layer material according to claim 1 or 2 or 3 or 4 or 5 or 6, is characterized in that: the anti-layer of described height (2) is made up of two or more combination of materials in metal material or semi-conducting material or dielectric material;
Described metal material adopts: gold or silver or copper or aluminium or nickel or germanium or chromium;
Described semi-conducting material adopts AlGaAs or InGaAs or the arsenide such as GaAs or aluminium arsenide or silicon;
Described dielectric material adopts oxide or fluoride or sulfide or nitride or selenides;
Described saturated absorbing layer (3) is by Graphene, Graphene derivative, BN, MoS
2, WS
2, WSe
2, Bi
2se
3, Bi
2te
3or Sb
2te
3individual layer, bilayer or plural layers form, or by Graphene, Graphene derivative, BN, MoS
2, WS
2, WSe
2, Bi
2se
3, Bi
2te
3or Sb
2te
3in two or more lamination heterostructure film.
8. the practical saturable absorption device based on two-dimensional layer material according to claim 1 or 2 or 3 or 4 or 5 or 6, is characterized in that: functional layer is combined by a kind of or two kinds or multiple material and forms.
9. the practical saturable absorption device based on two-dimensional layer material according to any one of claim 1-6, is characterized in that: substrate (1) or the anti-reflection layer (7) of described saturated absorption device are placed on the copper base of copper base or center drilling;
Functional layer (4) or the anti-reflection layer (10) of described saturated absorption device are connected with optical fiber pigtail end face; Described substrate (1) is made up of glass or silicon or silicon dioxide or carborundum or quartz or sapphire or GaAs or aluminium arsenide or fluoride or selenides or medium of oxides material.
10. utilize the preparation method of the practical saturable absorption device based on two-dimensional layer material described in the claims, it is characterized in that, preparation process is as follows:
Periodic structure film basalis plating several layers or multilayer two kinds or more of different refractivity material is formed high anti-layer by step 1), then carries out nitrogen plasma treatment to the anti-layer of height;
Step 2) on the anti-layer of the described height through plasma treatment, plate one deck copper or nickel as metal catalyst layer, adopt the method for chemical vapour deposition (CVD) or plasma activated chemical vapour deposition or low pressure chemical vapour deposition or inductively coupled plasma vapour deposition, growth or evaporation is a kind of or saturated absorption material not of the same race forms saturated absorbing layer on metal catalytic layer, adopts the method for spin coating spin coating one deck polymethyl methacrylate protective layer on saturated absorbing layer subsequently;
Step 3) uses etching liquid to carry out chemical etching to metal catalyst layer, and metal catalyst layer is complete by chemical etching, and through heat treated, the realization that adheres to each other of high anti-layer and saturable absorption layer is close to;
Step 4) adopts the chemical reagent such as acetone to soak again, removes polymethyl methacrylate protective layer, allows outside saturated absorbing layer is exposed to, then heats in inert gas and thoroughly remove polymethyl methacrylate;
Step 5) is plated on described saturated absorbing layer, shift or grow an one functional layer, forms saturated absorbing body device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410410925.3A CN104218443A (en) | 2014-08-20 | 2014-08-20 | Two-dimensional stratified material based practical saturable absorber and production method thereof |
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| CN105098585A (en) * | 2015-08-27 | 2015-11-25 | 浙江大学 | Use of SrCuSi4O10 two-dimensional crystal and saturated absorber device formed by the same |
| CN105098586A (en) * | 2015-08-27 | 2015-11-25 | 浙江大学 | Application of BaCuSi4O10 two-dimensional crystals and saturable absorber device constituted by BaCuSi4O10 two-dimensional crystals |
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| CN105896257A (en) * | 2016-06-02 | 2016-08-24 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and mode-locking fiber laser |
| CN105896258A (en) * | 2016-06-16 | 2016-08-24 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser |
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| CN106785899A (en) * | 2016-12-19 | 2017-05-31 | 南京邮电大学 | Nitride locked mode Echo Wall micro laser of one direction transmitting and preparation method thereof |
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| CN105098586A (en) * | 2015-08-27 | 2015-11-25 | 浙江大学 | Application of BaCuSi4O10 two-dimensional crystals and saturable absorber device constituted by BaCuSi4O10 two-dimensional crystals |
| CN105098576B (en) * | 2015-08-27 | 2018-05-29 | 浙江大学 | Cu2MoS4The purposes of two dimensional crystal and its saturated absorbing body device of composition |
| CN105098586B (en) * | 2015-08-27 | 2018-05-29 | 浙江大学 | BaCuSi4O10The purposes of two dimensional crystal and its saturated absorbing body device of composition |
| CN105098585B (en) * | 2015-08-27 | 2018-05-29 | 浙江大学 | SrCuSi4O10The purposes of two dimensional crystal and its saturated absorbing body device of composition |
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| US20180375282A1 (en) * | 2016-06-16 | 2018-12-27 | Shenzhen University | Two-dimensional semiconductor saturable absorber mirror and fabrication method, and pulse fiber laser |
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| CN107557871A (en) * | 2016-07-01 | 2018-01-09 | 上海微电子装备（集团）股份有限公司 | Laser anneal device and method |
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| CN106785899B (en) * | 2016-12-19 | 2019-01-08 | 南京邮电大学 | The nitride mode locking Echo Wall micro laser and preparation method thereof of one direction transmitting |
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| CN108270144A (en) * | 2016-12-30 | 2018-07-10 | 陕西师范大学 | A kind of preparation method of the silica sound stage width with saturated absorption device |
| WO2018205086A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Two-dimensional material heterojunction saturable absorption mirror and preparation method therefor |
| WO2018205087A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and pulse fiber laser |
| CN107069412B (en) * | 2017-05-22 | 2021-09-21 | 四川大学 | Mid-infrared saturable absorber mirror based on all-dielectric high-reflection film and preparation method thereof |
| CN107069412A (en) * | 2017-05-22 | 2017-08-18 | 四川大学 | Based on infrared saturable absorbing mirror in all dielectric highly reflecting films and preparation method thereof |
| CN107275422B (en) * | 2017-06-22 | 2019-11-26 | 江南大学 | A kind of structure enhancing two-dimentional transient metal sulfide light absorption |
| CN107275422A (en) * | 2017-06-22 | 2017-10-20 | 江南大学 | It is a kind of to strengthen the structure of two-dimentional transient metal sulfide light absorbs |
| CN110600985A (en) * | 2019-08-09 | 2019-12-20 | 武汉光谷信息光电子创新中心有限公司 | Waveguide structure, optical device and manufacturing method of waveguide structure |
| CN111048983A (en) * | 2019-11-23 | 2020-04-21 | 上海应用技术大学 | Saturable absorber for optical fiber laser and preparation method thereof |
| CN111048983B (en) * | 2019-11-23 | 2021-07-20 | 上海应用技术大学 | Saturable absorber for optical fiber laser and preparation method thereof |
| CN111193174A (en) * | 2020-01-10 | 2020-05-22 | 深圳瀚光科技有限公司 | Saturable absorber based on bismuth telluride heterojunction and preparation method and application thereof |
| CN111193174B (en) * | 2020-01-10 | 2021-07-30 | 深圳瀚光科技有限公司 | Saturable absorber based on bismuth telluride heterojunction and preparation method and application thereof |
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