CN107272811A - A kind of low-temperature coefficient reference voltage source circuit - Google Patents
A kind of low-temperature coefficient reference voltage source circuit Download PDFInfo
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- CN107272811A CN107272811A CN201710658669.3A CN201710658669A CN107272811A CN 107272811 A CN107272811 A CN 107272811A CN 201710658669 A CN201710658669 A CN 201710658669A CN 107272811 A CN107272811 A CN 107272811A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a kind of low-temperature coefficient reference voltage source circuit, including：Current generating circuit, voltage generation circuit, PSRR circuit, the current generating circuit provides electric current to the voltage generation circuit, the PSRR circuit provides operating voltage, the voltage generation circuit output reference voltage to the current generating circuit and voltage generation circuit.The reference voltage source that the invention is obtained is less than 1V, and with lower temperature coefficient, can suppress power supply noise, can provide more stable reference voltage, meet the development trend of current electronic equipment low supply voltage and low-power consumption.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of low-temperature coefficient reference voltage source circuit.
Background technology
Reference voltage source is in many circuits, such as Analogous Integrated Electronic Circuits, digital integrated electronic circuit, modulus hybrid integrated electricity
Road, is critically important part.Its effect in circuit is to produce one not by technique, power supply, temperature change shadow
Loud DC voltage, voltage is provided for whole circuit, and its precision directly influences the performance of whole circuit.Therefore design a kind of high
The reference voltage source of performance is necessary, and its performance is mainly affected by temperature.
Band-gap reference technology is a kind of widely used reference voltage source generation technology.Its principle is to utilize bipolar transistor
The base emitter voltage of pipe has negative temperature coefficient, and if two bipolar transistor operations are in unequal current density
Under, the difference of their base emitter voltage has positive temperature coefficient.By selecting suitable parameter both is mended mutually
Repay, temperature independent voltage can be obtained.
About 1.25V temperature independent electricity can be produced by using the reference voltage source of band-gap reference technology
Pressure.However, with to low-power consumption, low-voltage, the demand of light portative equipment increase, actual requirement reference voltage source must
The voltage less than 1V must can be provided, traditional reference voltage 1.25V can not receive, low-voltage, low-temperature coefficient, height
It will be developing direction in future that PSRR, which is,.
The content of the invention
It is an object of the invention to provide a kind of low-temperature coefficient reference voltage source circuit, including：Current generating circuit, voltage
Generation circuit, PSRR circuit, the current generating circuit provide electric current, the power supply suppression to the voltage generation circuit
System provides operating voltage, the voltage generation circuit output reference than circuit to the current generating circuit and voltage generation circuit
Voltage.
Further, the current generating circuit is by first, second triode, first, second, third resistance, first, second
PMOS is constituted, under the colelctor electrode and base stage of first triode, the colelctor electrode of the second triode and base stage, second resistance
End, the lower end of 3rd resistor are grounded respectively, and the lower end of the first resistor is connected with the emitter stage of first triode, described
The upper end of first resistor upper end respectively with the 3rd resistor, the drain electrode of first PMOS are connected, the first PMOS
The source electrode of pipe is connected with the source electrode of second PMOS, and the grid of the grid of first PMOS and the 2nd PMOS connects
Connect, the upper end drained respectively with the second resistance of second PMOS, the emitter stage of second triode are connected.
Further, the voltage generation circuit is made up of the three, the 4th PMOSs, first, second, third NMOS tube, institute
State the source electrode of the 3rd PMOS respectively with the source electrode of the 4th PMOS, the source electrode of first PMOS, described second
The source electrode connection of PMOS, grid, the first PMOS of the grid of the 3rd PMOS respectively with the 4th PMOS
The grid of pipe, second PMOS grid connection, the 4th PMOS drain electrode respectively with second NMOS tube
Drain electrode, the grid connection of the grid of the second NMOS tube, the first NMOS tube, the grid of second NMOS tube and the first NMOS
The grid connection of pipe, the source electrode of second NMOS tube respectively with the draining of first NMOS tube, the 3rd NMOS tube
Source electrode is connected, and the source electrode of first NMOS tube connects over the ground, the grid of the 3rd NMOS tube respectively with its drain, described
The drain electrode connection of 3rd PMOS, the drain electrode output reference voltage of the 3rd NMOS tube.
Further, the PSRR circuit is made up of the five, the six, the seven, the 8th PMOSs, bias current sources,
The source electrode of 5th PMOS is connected with the source electrode of the 6th PMOS, the drain electrode of the 5th PMOS respectively with it is described
First, second, third, fourthth, the source electrode connection of the 8th PMOS, drain electrode and the 7th PMOS of the 6th PMOS
Source electrode connection, the grid of the 6th PMOS grid respectively with the 5th PMOS, the leakage of the 7th PMOS
Pole is connected, and one end of the bias current sources is connected with the drain electrode of the 7th PMOS, the other end of the bias current sources,
The drain electrode of 8th PMOS is connected over the ground respectively.
Further, backfeed loop is additionally provided with, the backfeed loop includes operational amplifier, the same phase of the operational amplifier
Drain electrode of the input respectively with the described first, upper end of 3rd resistor, the first PMOS is connected, the operational amplifier it is anti-phase
Input upper end respectively with the second resistance, the emitter stage of the second triode, the drain electrode of the second PMOS are connected, the fortune
The output end for calculating amplifier is connected with the grid of the 8th PMOS.
The beneficial effects of the invention are as follows：The reference voltage source that the invention is obtained is less than 1V, and with lower temperature
Coefficient, can suppress power supply noise, can provide more stable reference voltage, meet current electronic equipment low supply voltage and
The development trend of low-power consumption.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described.Obviously, described accompanying drawing is a part of embodiment of the present invention, rather than is all implemented
Example, those skilled in the art on the premise of not paying creative work, can also obtain other designs according to these accompanying drawings
Scheme and accompanying drawing.
Fig. 1 is the attachment structure schematic diagram of reference voltage source circuit.
Embodiment
The technique effect of the design of the present invention, concrete structure and generation is carried out below with reference to embodiment and accompanying drawing clear
Chu, it is fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this hair
Bright a part of embodiment, rather than whole embodiments, based on embodiments of the invention, those skilled in the art is not paying
The other embodiment obtained on the premise of creative work, belongs to the scope of protection of the invention.In addition, be previously mentioned in text
All connection/annexations, not singly refer to component and directly connect, and refer to be added deduct by adding according to specific implementation situation
Few couple auxiliary, to constitute more excellent draw bail.Each technical characteristic in the invention, in not conflicting conflict
Under the premise of can be with combination of interactions.
Embodiment 1, with reference to Fig. 1, a kind of low-temperature coefficient reference voltage source circuit, including：Current generating circuit a2, voltage
Generation circuit a1, PSRR circuit a3, backfeed loop a4.
The current generating circuit a2 by first, second triode Q1, Q2, first, second, third resistance R1, R2, R3,
First, second PMOS PM1, PM2 is constituted, and the backfeed loop a4 is made up of operational amplifier OP, the first triode Q1
Colelctor electrode and base stage, the second triode Q2 colelctor electrode and base stage, second resistance R2 lower end, 3rd resistor R3 lower end point
It is not grounded, the lower end of the first resistor R1 is connected with the emitter stage of the first triode Q1, and the first resistor R1's is upper
End upper end respectively with the 3rd resistor R3, the draining of the first PMOS PM1, the operational amplifier OP it is same mutually defeated
Enter end connection, the source electrode of the first PMOS PM1 is connected with the source electrode of the second PMOS PM2, first PMOS
PM1 grid is connected with the grid of the second PMOS PM2, the drain electrode of the second PMOS PM2 respectively with the computing
Amplifier OP inverting input, the upper end of the second resistance R2, the emitter stage connection of the second triode Q2.
The voltage generation circuit a1 by the three, the 4th PMOS PM3, PM4, first, second, third NMOS tube NM1,
NM2, NM3 are constituted, source electrode, the first PMOS of the source electrode of the 3rd PMOS PM3 respectively with the 4th PMOS PM4
The source electrode connection of pipe PM1 source electrode, the second PMOS PM2, the grid of the 3rd PMOS PM3 is respectively with the described 4th
PMOS PM4 grid, the grid of the first PMOS PM1, the grid connection of the second PMOS PM2, the described 4th
PMOS PM4 drain electrode respectively with the drain electrode of the second NMOS tube NM2, the second NMOS tube NM2 grid, the first NMOS tube
NM1 grid connection, the grid of the second NMOS tube NM2 is connected with the grid of the first NMOS tube NM1, and described second
Source electrode of the NMOS tube NM2 source electrode respectively with the draining of the first NMOS tube NM1, the 3rd NMOS tube NM3 is connected, described
First NMOS tube NM1 source electrode is connected over the ground, the grid of the 3rd NMOS tube NM3 respectively with its drain, the described 3rd
PMOS PM3 drain electrode connection, the drain electrode output reference voltage Vref of the 3rd NMOS tube NM3.
The PSRR circuit a3 is by the five, the six, the seven, the 8th PMOS PM5, PM6, PM7, PM8, biased electrical
Stream source Ib is constituted, and the source electrode of the 5th PMOS PM5 is connected with the source electrode of the 6th PMOS PM6, the 5th PMOS
Pipe PM5 source electrode and the 6th PMOS PM6 source electrode connect power vd D, the drain electrode point of the 5th PMOS PM5 respectively
Source electrode not with described first, second, third, fourth, the 8th PMOS PM1, PM2, PM3, PM4, PM8 is connected, and the described 8th
PMOS PM8 grid is connected with the input of the operational amplifier OP, the drain electrode of the 6th PMOS PM6 and described the
Seven PMOS PM7 source electrode connection, the grid of the 6th PMOS PM6 grid respectively with the 5th PMOS PM5, institute
The 7th PMOS PM7 drain electrode connection is stated, one end of the bias current sources Ib and the drain electrode of the 7th PMOS PM7 connect
Connect, the other end of the bias current sources Ib, the drain electrode of the 8th PMOS PM8 are connected over the ground respectively.
The current mirror that PSRR circuit a3 is made up of the five, the 6th PMOSs PM5, PM6, can be in the 5th PMOS
Pipe PM5 drain electrode for current generating circuit a2 and voltage generation circuit a1 provide replacement power vd D operating voltage (i.e. C points
Voltage), the first, second, third, fourth, the 7th PMOS PM1, PM2, PM3, PM4, PM7 composition current mirrors, bias supply Ib
Electric current is provided for the current mirror, because bias supply Ib is independent current source, unrelated with power vd D, the 8th PMOS PM8 passes through
With first, second, third, fourth PMOS PM1, PM2, PM3, PM4 cascades so that the leakage of the five, the 6th PMOSs PM5, PM6
Source voltage is equal, and structure as PSRR circuit a3 causes there is higher independence between C point voltages and power vd D
Property, reduce influences of the power vd D to C point voltages.
In addition, the backfeed loop that operational amplifier OP is constituted also improves PSRR circuit a3 PSRR,
When power vd D is fluctuated, A, B point voltage produce fine difference, and operational amplifier OP is capable of detecting when between 2 points of A, B voltage
Fine difference, and amplified output so that the 8th PMOS PM8 produces the compensation electric current for tackling the fine difference, the benefit
Repay electric current and produce offset voltage in C points, the offset voltage compensate for power vd D fluctuation, until A points voltage keeps stable, from
And make it that C points keep stable, further reduce the influence that power vd D is brought.
In the 3rd PMOS PM3, the 4th PMOS PM4 and the current generating circuit a2 in voltage generation circuit a1
Second PMOS PM2 constitutes current mirror, and the current replication for flowing through the second PMOS PM2 is divided into voltage generation circuit a1
Not Wei I3, I4, by metal-oxide-semiconductor mobility and threshold voltage temperature effects compensate, can be obtained from the 3rd NMOS tube NM3 drain electrode
Temperature independent reference voltage V ref.
Reference voltage V ref is derived below, term is explained：Vref：Reference voltage；VDS3：It is NMOS tube NM3 leakage
Source voltage；VDS1：First NMOS tube NM1 drain-source voltage；VGS1：First NMOS tube NM1 gate source voltage；VTH：The threshold of NMOS tube
Threshold voltage；μn：The mobility of electronics；μp：The mobility in hole；Cox：Unit area gate capacitance；W：Conducting channel width；L：Lead
Electric channel length.
As Fig. 1 can be seen that reference voltage is：
Vref=VDS3+VDS1 (1)
The electric current for flowing through the 4th PMOS PM4 is：
I4=K2[(VGS1-VTH)VDS1-(VDS1/2)] (2)
Wherein
Ki=μn,pCox(W/L)iI=1,2...
The electric current for flowing through the first NMOS tube NM1 is identical with the second NMOS tube NM2 electric current, i.e.,：
It can be obtained by Fig. 1：
VGS1=VDS1+VGS2 (4)
Above formula (2), (3), (4) formula simultaneous are obtained
Solve
Order
Then
Again
μn=μn0(T/T0)-2 (6)
Wherein T0It is reference temperature, μ 0 is that temperature is T0The electron mobility for being.μ n reduce with the rise of temperature.
(5) formula derivation is obtained
By (6), (7) Shi Ke get
The electric current for flowing through the 3rd PMOS PM3 is：
Again
VOVIt is over-drive voltage, its value subtracts threshold voltage for the gate source voltage of metal-oxide-semiconductor.
Obtained with (6), (7) formula
9 formula derivations can be obtained
It is a negative value, its size depends on technique.
Finally (1) formula derivation is obtained：
This reference voltage source circuit has 2.7ppm/ within the temperature range of -40~140 DEG C under Hspice emulators
DEG C temperature coefficient, output reference voltage is between 550.5mV~550.7mV, supply voltage VDD=1.8V, descends power consumption at room temperature
For 62uW.Meet low-voltage, low-temperature coefficient, the future development demand of high PSRR.
The better embodiment to the present invention is illustrated above, but the invention is not limited to the implementation
Example, those skilled in the art can also make a variety of equivalent modifications or replace on the premise of without prejudice to spirit of the invention
Change, these equivalent modifications or replacement are all contained in the application claim limited range.
Claims (5)
1. a kind of low-temperature coefficient reference voltage source circuit, it is characterised in that including：Current generating circuit, voltage generation circuit,
PSRR circuit, the current generating circuit provides electric current, the PSRR circuit to the voltage generation circuit
Operating voltage, the voltage generation circuit output reference voltage are provided to the current generating circuit and voltage generation circuit.
2. a kind of low-temperature coefficient reference voltage source circuit according to claim 1, it is characterised in that：The electric current is produced
Circuit is made up of first, second triode, first, second, third resistance, first, second PMOS, first triode
Colelctor electrode and base stage, the colelctor electrode of the second triode and base stage, the lower end of second resistance, the lower end of 3rd resistor are grounded respectively,
The lower end of the first resistor is connected with the emitter stage of first triode, and the upper end of the first resistor is respectively with described
The upper end of three resistance, the drain electrode connection of first PMOS, the source electrode of first PMOS and second PMOS
Source electrode is connected, and the grid of first PMOS is connected with the grid of the 2nd PMOS, the drain electrode point of second PMOS
Upper end, the emitter stage of second triode not with the second resistance are connected.
3. a kind of low-temperature coefficient reference voltage source circuit according to claim 2, it is characterised in that：The voltage is produced
Circuit is made up of the three, the 4th PMOSs, first, second, third NMOS tube, the source electrode of the 3rd PMOS respectively with it is described
The source electrode of 4th PMOS, the source electrode of first PMOS, the source electrode connection of second PMOS, the 3rd PMOS
Grid connect respectively with the grid of the grid, the grid of first PMOS, second PMOS of the 4th PMOS
Connect, the 4th PMOS drain electrode respectively with the drain electrode of second NMOS tube, the grid of the second NMOS tube, the first NMOS tube
Grid connection, the grid of second NMOS tube is connected with the grid of first NMOS tube, the source of second NMOS tube
Source electrode of the pole respectively with the draining of first NMOS tube, the 3rd NMOS tube is connected, the source electrode pair of first NMOS tube
Ground is connected, and the drain electrode of the grid of the 3rd NMOS tube respectively with its drain, the 3rd PMOS is connected, and the described 3rd
The drain electrode output reference voltage of NMOS tube.
4. a kind of low-temperature coefficient reference voltage source circuit according to claim 3, it is characterised in that：The power supply suppresses
It is made up of than circuit the five, the six, the seven, the 8th PMOSs, bias current sources, the source electrode of the 5th PMOS and described the
The source electrode connection of six PMOSs, the drain electrode of the 5th PMOS respectively with described first, second, third, fourth, the 8th PMOS
The source electrode connection of pipe, the drain electrode of the 6th PMOS is connected with the source electrode of the 7th PMOS, the 6th PMOS
Grid grid respectively with the 5th PMOS, the drain electrode of the 7th PMOS are connected, one end of the bias current sources
Drain electrode with the 7th PMOS is connected, the other end of the bias current sources, the 8th PMOS drain electrode it is right respectively
Ground is connected.
5. a kind of low-temperature coefficient reference voltage source circuit according to claim 4, it is characterised in that：It is additionally provided with and feeds back to
Road, the backfeed loop includes operational amplifier, and the in-phase input end of the operational amplifier is electric with the described first, the 3rd respectively
The upper end of resistance, the drain electrode connection of the first PMOS, the inverting input of the operational amplifier respectively with the second resistance
Upper end, the emitter stage of the second triode, the drain electrode connection of the second PMOS, the output end of the operational amplifier and the described 8th
The grid connection of PMOS.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710658669.3A CN107272811B (en) | 2017-08-04 | 2017-08-04 | A kind of low-temperature coefficient reference voltage source circuit |
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| CN201710658669.3A CN107272811B (en) | 2017-08-04 | 2017-08-04 | A kind of low-temperature coefficient reference voltage source circuit |
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| CN107272811A true CN107272811A (en) | 2017-10-20 |
| CN107272811B CN107272811B (en) | 2018-11-30 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112504494A (en) * | 2020-12-02 | 2021-03-16 | 中国科学院上海高等研究院 | Ultra-low power consumption CMOS temperature sensing circuit |
| CN114578891A (en) * | 2022-05-06 | 2022-06-03 | 苏州贝克微电子股份有限公司 | Circuit capable of reducing temperature influence |
| CN114967817A (en) * | 2022-07-13 | 2022-08-30 | 深圳爱仕特科技有限公司 | Low-power-consumption current source integrated circuit |
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| US20040257150A1 (en) * | 2003-06-20 | 2004-12-23 | Farooqui Arshad Suhail | Bandgap reference voltage generator |
| CN102495659A (en) * | 2011-12-27 | 2012-06-13 | 东南大学 | Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source |
| CN104035471A (en) * | 2014-06-27 | 2014-09-10 | 东南大学 | Current mode bandgap reference voltage source with subthreshold current compensation function |
| CN105786081A (en) * | 2016-03-30 | 2016-07-20 | 上海华虹宏力半导体制造有限公司 | Reference voltage source circuit |
| CN106125811A (en) * | 2016-06-15 | 2016-11-16 | 北京工业大学 | A kind of ultra-low temperature drift high PSRR bandgap voltage reference |
| CN207037520U (en) * | 2017-08-04 | 2018-02-23 | 佛山科学技术学院 | A kind of low-temperature coefficient reference voltage source circuit |
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2017
- 2017-08-04 CN CN201710658669.3A patent/CN107272811B/en not_active Expired - Fee Related
Patent Citations (6)
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| US20040257150A1 (en) * | 2003-06-20 | 2004-12-23 | Farooqui Arshad Suhail | Bandgap reference voltage generator |
| CN102495659A (en) * | 2011-12-27 | 2012-06-13 | 东南大学 | Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source |
| CN104035471A (en) * | 2014-06-27 | 2014-09-10 | 东南大学 | Current mode bandgap reference voltage source with subthreshold current compensation function |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112504494A (en) * | 2020-12-02 | 2021-03-16 | 中国科学院上海高等研究院 | Ultra-low power consumption CMOS temperature sensing circuit |
| CN114578891A (en) * | 2022-05-06 | 2022-06-03 | 苏州贝克微电子股份有限公司 | Circuit capable of reducing temperature influence |
| CN114578891B (en) * | 2022-05-06 | 2022-07-12 | 苏州贝克微电子股份有限公司 | Circuit capable of reducing temperature influence |
| CN114967817A (en) * | 2022-07-13 | 2022-08-30 | 深圳爱仕特科技有限公司 | Low-power-consumption current source integrated circuit |
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| CN107272811B (en) | 2018-11-30 |
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