CN107271878A - Pass through the hot properties method of testing and device of electric current heating semiconductor - Google Patents
Pass through the hot properties method of testing and device of electric current heating semiconductor Download PDFInfo
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- CN107271878A CN107271878A CN201710445784.2A CN201710445784A CN107271878A CN 107271878 A CN107271878 A CN 107271878A CN 201710445784 A CN201710445784 A CN 201710445784A CN 107271878 A CN107271878 A CN 107271878A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
Abstract
The present invention relates to a kind of hot properties method of testing and device by electric current heating semiconductor, when it is turned in the loop that power supply and semiconductor devices to be tested are electrically connected to form, there is conducting electric current in semiconductor devices to be tested, so as to heat semiconductor chip using the loss of semiconductor devices itself, firing rate is fast；The TSP parameters of monitoring semiconductor devices in time in heating process, and calculate using TSP parameters the junction temperature of semiconductor devices to be measured, once the close enough test target temperature T of junction temperaturej‑testWhen, the hot properties test to semiconductor devices to be tested can be realized using hot properties test system, test takes smaller, efficiency high, is especially suitable for the test of a large amount of samples；Measuring accuracy is very high；The possibility scalded is not present in operating process, the security of test is improved.
Description
Technical field
The present invention relates to a kind of method of testing and device, especially a kind of high temperature by electric current heating semiconductor is special
Property method of testing and device, belong to the technical field of semiconductor hot properties test.
Background technology
Based on the semiconductor devices of the semi-conducting material such as manufacture such as silicon, germanium or GaAs, can be used as rectifier, oscillator,
The equipment such as photophore, amplifier, Photometer.In order to be distinguished with integrated circuit, otherwise referred to as discrete device.Specifically include two
The devices such as pole pipe, bipolar transistor, field-effect transistor, photodetector, light emitting diode, semiconductor laser and photocell
Part.
The feature that the parameter and performance of semiconductor devices are shown under different temperature conditionss.Specifically include normal temperature
(25 DEG C) characteristic, low temperature (being less than 25 DEG C) characteristic and high temperature (being higher than 25 DEG C) characteristic.Research and development, test of dispatching from the factory in semiconductor devices
And the link such as application and development, it usually needs investigate the hot properties of semiconductor devices.
At present, the hot properties method of testing for semiconductor devices mainly has two kinds：1), added by heated at constant temperature platform 6
Tested after hot semiconductor devices；2), by being tested after the heating semiconductor of high temperature constant temperature experimental box 7.
As shown in figure 1, for after at present by the heating semiconductor of heated at constant temperature platform 6, hot properties test needed for carrying out
Method, specifically include following steps：
1), semiconductor devices to be measured and heated at constant temperature platform 6 are carried out thermally coupled, it is ensured that the heat of heated at constant temperature platform 6 can be with
Quickly be transmitted to semiconductor devices to be measured, wherein, semiconductor devices include semiconductor chip 3 and with the semiconductor chip 3
The device outer case 2 of adaptation, sets test connector 4, semiconductor devices is by testing connector 4 and high temperature on device outer case 2
Characteristic test system 1 is electrically connected, the contact surface formation thermal interface 5 of semiconductor devices and heated at constant temperature platform 6；
2), heated at constant temperature platform 6 is set to test required temperature, it is permanent after a period of time (representative value is 20 minutes or so)
The warm temperature of warm table 6 rises near the required temperature of test and can kept constant.Now semiconductor devices to be measured adds with constant temperature
Thermal station 6 reaches thermal balance, that is to say, that both temperature are approximately the same, the junction temperature of such case lower semiconductor 3 also with heated at constant temperature
The temperature of platform 6 is approximately the same；
3), hot properties test system 1 is tested semiconductor devices to be measured, to obtain the semiconductor devices in institute
Need the characteristic under high temperature.
As shown in Fig. 2 after at present by the heating semiconductor of high temperature constant temperature experimental box 7, to be carried out to semiconductor devices
The schematic diagram of required hot properties test, specifically includes following steps：
1), semiconductor devices to be measured is placed on inside high temperature constant temperature experimental box 7, hot properties test system 1 generally will
It is placed on outside high temperature constant temperature experimental box 7, situation about placing it in inside high temperature constant temperature experimental box 7 is also not excluded for certainly；
2), high temperature constant temperature experimental box 7 is set to test required temperature, after a period of time (representative value is 1 hour or so),
The internal air temperature of high temperature constant temperature experimental box 7 rises near the required temperature of test and can kept constant.It is now to be measured partly to lead
Body device reaches thermal balance with the internal gas of high temperature constant temperature experimental box 7, that is to say, that both temperature are approximately the same, in this case
The junction temperature of semiconductor chip 3 is also approximately the same with the internal air temperature of high temperature constant temperature experimental box 7.
Above two is primarily present deficiency to the hot properties method of testing of semiconductor devices：
1), test time-consuming oversize, efficiency is low, is only suitable for the test of a small amount of sample.
2), measuring accuracy is not high.Usual heated at constant temperature platform 6 has ± 3 DEG C of control error, and high temperature constant temperature experimental box 7 has ± 2
DEG C control error.The cost of heater will be greatly improved if required precision is higher.
3), experiment has certain danger.Because generating high temperature in experimentation, it is possible to scald in operating process
Wound.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art to pass through electric current heating semiconductor there is provided one kind
Hot properties method of testing and device, its testing efficiency is high, is lost small, is adapted to the test of a large amount of samples, improves the essence of test
Degree and reliability and security.
The technical scheme provided according to the present invention, a kind of hot properties test side by electric current heating semiconductor
Method, the hot properties method of testing comprises the following steps：
Step 1, provide semiconductor devices to be tested, for into semiconductor devices the power supply of injection heating electric current, use
In the junction temperature test system to semiconductor devices to be tested progress junction temperature test and for testing semiconductor devices hot properties
Hot properties test system, the semiconductor devices can be suitable with hot properties test system, junction temperature test system and power supply
With connection；
The relation curve of step 2, the TSP parameters of the above-mentioned semiconductor devices to be tested of calibration and junction temperature, and determine to be tested
The test target temperature T of semiconductor devicesj-test；
Step 3, control power supply are electrically connected with semiconductor devices to be tested, to cause power supply into semiconductor devices to be tested
Input current；
Step 4, after the time required to being powered to semiconductor devices, utilize junction temperature test system to test the semiconductor devices
TSP parameters, and calculate the current junction temperature of semiconductor devices using the obtained TSP parameters of test；
If step 5, above-mentioned junction temperature test system test the junction temperature and test target temperature T for obtaining semiconductor devicesj-testBetween
Difference when being more than predetermined threshold value, 4 are repeated the above steps, until the junction temperature of semiconductor devices and test target temperature Tj-testBetween
Difference matched with predetermined threshold value, and perform step 6；
Step 6, control hot properties test system and the electrical connection of semiconductor devices to be tested, to be surveyed using hot properties
Test system tests the hot properties of semiconductor devices.
The semiconductor devices to be tested is the semiconductor devices with TSP parameters, and the TSP parameters of semiconductor devices include
The conduction voltage drop of PN junction or schottky junction under the conditions of Constant Direct Current electric current.
The semiconductor devices to be tested by switch S1, switch S2, switch S3 respectively with hot properties test system, electricity
Source and junction temperature test system connection；
Switch S1, switch S2 and switch S3 are connected with test controller, test controller energy controlling switch S1, switch S2
And switch S3 on off state；When switching S1 closures, semiconductor devices to be tested can be electrically connected with hot properties test system；
When switching S2 closures, semiconductor devices to be tested and power electric connection；When switching S3 closures, semiconductor devices to be tested and junction temperature
Test system is electrically connected.
The power supply be constant-current source or constant pressure source, switch S1, switch S2, switch S3 type include IGBT, MOSFET or
GTO。
A kind of hot properties test device by electric current heating semiconductor, including for being noted into semiconductor devices
Enter the power supply of heated current, for carrying out the junction temperature test system of junction temperature test to semiconductor devices and for testing semiconductor
The hot properties test system of higher device temperature characteristic, hot properties test system, junction temperature test system and power supply pass through switch
Circuit is electrically connected with semiconductor devices to be tested, the on-off circuit, hot properties test system, junction temperature test system and electricity
Source is electrically connected with test controller, and test controller can control semiconductor devices to be tested by the working condition of on-off circuit
With the electrical connection of hot properties test system, junction temperature test system and/or power supply；
Test controller control power supply is electrically connected with semiconductor devices to be tested, to cause power supply to semiconductor device to be tested
Input current in part；
After the time required to being powered to semiconductor devices, the TSP of the semiconductor devices is tested using junction temperature test system
Parameter, and the TSP parameters obtained using test calculate the current junction temperature of semiconductor devices；
If junction temperature test system test obtains the junction temperature and test target temperature T of semiconductor devicesj-testBetween difference be more than
During predetermined threshold value, above-mentioned energization and test process are repeated, until the junction temperature of semiconductor devices and test target temperature Tj-testBetween
Difference is matched with predetermined threshold value；
Test controller controls hot properties test system and the electrical connection of semiconductor devices to be tested, with special using high temperature
The hot properties of property test system and test semiconductor devices.
The on-off circuit includes switch S1, switch S2 and switch S3, and the semiconductor devices to be tested passes through switch
S1, switch S2, switch S3 are connected with hot properties test system, power supply and junction temperature test system respectively；
Switch S1, switch S2 and switch S3 are connected with test controller, test controller energy controlling switch S1, switch S2
And switch S3 on off state；When switching S1 closures, semiconductor devices to be tested can be electrically connected with hot properties test system；
When switching S2 closures, semiconductor devices to be tested and power electric connection；When switching S3 closures, semiconductor devices to be tested and junction temperature
Test system is electrically connected.
The power supply be constant-current source or constant pressure source, switch S1, switch S2, switch S3 type include IGBT, MOSFET or
GTO。
The test controller includes computer.
Advantages of the present invention：When being turned in the loop that power supply and semiconductor devices to be tested are electrically connected to form, to be tested half
There is conducting electric current in conductor device, so as to heat semiconductor chip, firing rate using the loss of semiconductor devices itself
It hurry up；The TSP parameters of monitoring semiconductor devices, and semiconductor devices to be measured is calculated using TSP parameters in time in heating process
Junction temperature, once the close enough test target temperature T of junction temperaturej-testWhen, it can be realized to be tested using hot properties test system
The hot properties test of semiconductor devices, can realize within the extremely short time and carry out hot properties survey to semiconductor devices to be measured
Examination；Test takes smaller, efficiency high, is especially suitable for the test of a large amount of samples；Due to can directly measure semiconductor devices junction temperature, because
This measuring accuracy is very high；During test experiments, only semiconductor device inside semiconductor chip is heated, device outer case temperature
Very little is risen, the possibility scalded is not present in operating process, the security of test is improved.
Brief description of the drawings
Fig. 1 is the schematic diagram that existing use heated at constant temperature platform carries out heating test.
Fig. 2 is the schematic diagram that existing use high temperature constant temperature experimental box carries out heating test.
Fig. 3 is schematic diagram of the invention.
The schematic diagram that Fig. 4 tests for present invention heating.
Description of reference numerals：1- hot properties test system, 2- device outer cases, 3- semiconductor chips, 4- test connector,
5- thermal interfaces, 6- heated at constant temperature platform, 7- high temperature constant temperatures experimental box, 8- junction temperature test systems, 9- power supplys and 10- testing and controls
Device.
Embodiment
With reference to specific drawings and examples, the invention will be further described.
As shown in Figure 3 and Figure 4：In order to be able to improve testing efficiency and measuring accuracy, it is ensured that the security of test, the present invention
Hot properties method of testing comprise the following steps：
Step 1, provide semiconductor devices to be tested, for into semiconductor devices the power supply 9 of injection heating electric current, use
In the junction temperature test system 8 to semiconductor devices to be tested progress junction temperature test and for testing semiconductor devices hot properties
Hot properties test system 1, the semiconductor devices can be with hot properties test system 1, junction temperature test system 8 and power supply
9 adaptation connections；
Specifically, semiconductor devices to be tested has device outer case 2 and the semiconductor core in the device outer case 2
Piece, in order to be able to be connected with hot properties test system 1, junction temperature test system 8 and power supply 9 adaptation point, in addition to test connection
Mouthfuls 4, the test connector 4 is located on device outer case 2 or is arranged on frock clamp, using test connector 4 can realize and
The electrical connection of hot properties test system 1, junction temperature test system 8 and power supply 9, hot properties test system 1 and test connect
Interface 4 can use existing conventional structure type, and specially known to those skilled in the art, here is omitted.
The hot properties of semiconductor devices to be tested specifically refers to, relative to normal temperature characteristic, typically refer to semiconductor devices and exist
Higher than the characteristic under normal temperature condition, such as IGBT device usually requires test, and it (has under the conditions of maximum junction temperature according to device difference
125 DEG C, 150 DEG C or 175 DEG C) static state and dynamic characteristic.It is right under the specified temp higher than normal temperature that hot properties test refers to
Semiconductor devices is tested.TSP (Temperature SensitiveParameter, referred to as temperature sensitive parameter), refers to partly lead
The body device parameter related to temperature, the temperature of device counter can be released according to the value of this kind of parameter.For example, PN junction is in low current
Under the conditions of conduction voltage drop and temperature it is linear, its conduction voltage drop of place can as PN junction TSP.
In the embodiment of the present invention, the semiconductor devices to be tested is the semiconductor devices with TSP parameters, semiconductor device
The TSP parameters of part include conduction voltage drop PN junction or schottky junction under the conditions of corresponding Constant Direct Current electric current.
When it is implemented, in order to be able to realize the test to semiconductor devices to be tested, the semiconductor devices to be tested leads to
Switch S1, switch S2, switch S3 is crossed to be connected with hot properties test system 1, power supply 9 and junction temperature test system 8 respectively；
Switch S1, switch S2 and switch S3 are connected with test controller 10, the energy controlling switch of test controller 10 S1, are opened
Close S2 and switch S3 on off state；When switching S1 closures, semiconductor devices to be tested can be with the electricity of hot properties test system 1
Connection；When switching S2 closures, semiconductor devices to be tested is electrically connected with power supply 9；When switching S3 closures, semiconductor devices to be tested
Electrically connected with junction temperature test system 8.
In the embodiment of the present invention, the power supply 9 is constant-current source or constant pressure source, switch S1, switch S2, the type bag for switching S3
Include the switching devices such as IGBT, MOSFET or GTO.Test controller 10 can be using conventional computer, or uses other micro- places
Chip is managed, test controller 10 is except energy controlling switch S1, switch S2 and the on off state for switching S3, moreover it is possible to start or close
Hot properties test system 1, power supply 9 and junction temperature test system 8.
The relation curve of step 2, the TSP parameters of the above-mentioned semiconductor devices to be tested of calibration and junction temperature, and determine to be tested
The test target temperature T of semiconductor devicesj-test；
The conduction voltage drop and junction temperature of chip of PN junction (or schottky junction) under the conditions of Physics of Semiconductor Devices, low current
It is linear.Almost all of semiconductor device inside all includes PN junction (or schottky junction), therefore, it can utilize PN junction
The conduction voltage drop of (or schottky junction) under the conditions of smaller current is used as the typical method of testings of TSP.
Determining with when conduction voltage drop is tested as TSP, it is necessary to the conduction voltage drop and knot of semiconductor devices to be tested
Warm curve is calibrated.In the embodiment of the present invention, the conduction voltage drop of semiconductor devices and the relation of junction temperature curve are：VF=m × Tj
+ b, wherein, VFFor conduction voltage drop, TjFor junction temperature, junction temperature is the operating temperature of PN junction in semiconductor chip.Semiconductor devices is led
Semiconductor devices can be heated to required temperature by logical pressure drop and junction temperature curve by heated at constant temperature platform 6 or high temperature constant temperature experimental box 7
Afterwards, a constant low current is injected to the PN junction of semiconductor devices to be measured, then tests the voltage at PN junction two ends, so just obtained
To one group of (VF, Tj) data.Due to VFAnd TjFor linear relationship, (the V of two different temperature points is tested in theoryF, Tj) data
Just it can be fitted and obtain m and b values.Certainly, in order to improve measuring accuracy, (the V of more temperature spots can be testedF, Tj) data pass through again
Least square fitting obtains parameter m and parameter b values, and specific fit procedure is known to those skilled in the art, herein no longer
Repeat.
When it is implemented, the relation set up between the PN junction conduction voltage drop of semiconductor devices to be measured and junction temperature is relatively time consuming,
But to matured product, the parameter m and parameter b values uniformity between identical product different components are very good.So, test is partly led on a small quantity
Just believable m and b values can be obtained after body device, it is possible to as m the and b values of whole product.
After parameter m and parameter b numerical value is obtained, that is, complete bent to the conduction voltage drop and junction temperature of semiconductor devices to be measured
The calibration of line.The test target temperature T of semiconductor devices to be tested is determined after calibrationj-test。
Step 3, control power supply 9 are electrically connected with semiconductor devices to be tested, to cause power supply 9 to semiconductor devices to be tested
Interior input current；
In the embodiment of the present invention, test controller 10 is closed by controlling switch S2, and switch S1 and S3 disconnect, and can cause electricity
Source 9 is electrically connected with semiconductor devices to be tested, after startup power supply 9, and power supply 9 can input electricity into semiconductor devices to be tested
Stream, after semiconductor devices conducting electric current, heats semiconductor chip 3, generally using the loss of semiconductor devices to be tested itself
In the case of, in the presence of conducting electric current, semiconductor devices can be rapidly heated (within several seconds), the i.e. junction temperature of semiconductor devices
Rise.
Step 4, after the time required to being powered to semiconductor devices, test the semiconductor device using junction temperature test system 8
The TSP parameters of part, and the TSP parameters obtained using test calculate the current junction temperature of semiconductor devices；
Specifically as shown in figure 4,0-t1In time, the controlling switch S1 of test controller 10 disconnects, switch S2 closures, switchs S3
Disconnect, and control power supply 9 to export, now power supply 9 is to semiconductor devices input current to be measured, junction of semiconductor device temperature rise to be measured
It is high.
t1-t2In time, the controlling switch S1 of test controller 10 disconnects, and switch S2 disconnects, switch S3 closures, testing and control
The control junction temperature test system 8 of device 10 tests the junction temperature of semiconductor devices.Junction temperature test system 8 tests the tool of semiconductor devices junction temperature
Body method is：Constant current is injected to semiconductor devices to be measured, size of current is with calibrating used in conduction voltage drop and junction temperature curve
Electric current is identical, after injection constant current, the pressure drop at test semiconductor devices two ends, and passes through known conduction voltage drop and junction temperature
Curve calculates junction temperature.
When it is implemented, when power supply 9 is heated to semiconductor devices to be tested, junction temperature test system 8 can also be utilized simultaneously
Carry out junction temperature test, i.e. power supply 9 and realize that junction temperature is tested with the cooperation of junction temperature test system 8, junction temperature test system 8 can specifically be used
The conventional structure type of the art, as long as above-mentioned test process can be realized, here is omitted.
If step 5, above-mentioned junction temperature test system test the junction temperature and test target temperature T for obtaining semiconductor devicesj-testBetween
Difference when being more than predetermined threshold value, 4 are repeated the above steps, until the junction temperature of semiconductor devices and test target temperature Tj-testBetween
Difference matched with predetermined threshold value, and perform step 6；
In the embodiment of the present invention, in 0-t1Time and t1-t2Time may be considered a cycle, now, to be measured partly to lead
The junction temperature of body device is raised but less than test target temperature Tj-test, accordingly, it would be desirable to repeat the above steps 4 process and with test
Target temperature Tj-testIt is compared.
The size of predetermined threshold value can be set as needed, generally ± 1 DEG C, junction temperature and survey when semiconductor devices
Try target temperature Tj-testBetween difference matched with predetermined threshold value, it is necessary to immediately using 1 pair of hot properties test system it is described to be measured
Semiconductor devices is tested.
Step 6, control hot properties test system 1 and the electrical connection of semiconductor devices to be tested, to utilize hot properties
Test system 1 tests the hot properties of semiconductor devices.
When it is implemented, test controller 10 is by causing switch S1 to close, switch S2 and switch S3 disconnect, that is, cause
Hot properties test system 1 carries out hot properties test to semiconductor devices to be tested, and hot properties test system 1 is specifically tested
The process of semiconductor devices hot properties is that here is omitted known to those skilled in the art.
According to the above description, hot properties test device of the invention, is specifically included for being injected into semiconductor devices
The power supply 9 of heated current, for semiconductor devices carry out junction temperature test junction temperature test system 8 and for semiconductor devices
The hot properties test system 1 of hot properties, hot properties test system 1, junction temperature test system 8 and power supply 9 pass through switch
Circuit is electrically connected with semiconductor devices to be tested, the on-off circuit, hot properties test system 1, junction temperature test system 8 and
Power supply 9 is electrically connected with test controller 10, and test controller 10 can control hot properties by the working condition of on-off circuit
The electrical connection of test system 1, junction temperature test system 8 and/or power supply 9 and semiconductor devices to be tested；
In the embodiment of the present invention, the on-off circuit includes switch S1, switch S2 and switch S3, described to be tested partly to lead
Body device by switch S1, switch S2, switch S3 respectively with hot properties test system 1, power supply 9 and junction temperature test system 8
Connection；
Switch S1, switch S2 and switch S3 are connected with test controller 10, the energy controlling switch of test controller 10 S1, are opened
Close S2 and switch S3 on off state；When switching S1 closures, semiconductor devices to be tested can be with the electricity of hot properties test system 1
Connection；When switching S2 closures, semiconductor devices to be tested is electrically connected with power supply 9；When switching S3 closures, semiconductor devices to be tested
Electrically connected with junction temperature test system 8.
Hot properties test system 1, junction temperature test system 8, power supply 9 and the specific course of work of test controller 10 can
To refer to described above process, here is omitted.
When the present invention is turned in the loop that power supply 9 and semiconductor devices to be tested are electrically connected to form, semiconductor device to be tested
There is conducting electric current in part, so as to heat semiconductor chip 3 using the loss of semiconductor devices itself, firing rate is fast；
The TSP parameters of monitoring semiconductor devices, and calculate using TSP parameters the knot of semiconductor devices to be measured in time in heating process
Temperature, once the close enough test target temperature T of junction temperaturej-testWhen, it can be realized to be tested half using hot properties test system 1
The hot properties test of conductor device, can realize within the extremely short time and carry out hot properties survey to semiconductor devices to be measured
Examination；Test takes smaller, efficiency high, is especially suitable for the test of a large amount of samples；Due to can directly measure semiconductor devices junction temperature, because
This measuring accuracy is very high；During test experiments, only semiconductor device inside semiconductor chip 3 is heated, device outer case 2
Temperature rise very little, is not present the possibility scalded, improves the security of test in operating process.
Claims (8)
1. a kind of hot properties method of testing by electric current heating semiconductor, it is characterized in that, the hot properties test
Method comprises the following steps：
Step 1, provide semiconductor devices to be tested, for into semiconductor devices the power supply (9) of injection heating electric current, be used for
The junction temperature test system (8) of junction temperature test is carried out to semiconductor devices to be tested and for testing semiconductor devices hot properties
Hot properties test system (1), the semiconductor devices can with hot properties test system (1), junction temperature test system (8) with
And power supply (9) adaptation connection；
The relation curve of step 2, the TSP parameters of the above-mentioned semiconductor devices to be tested of calibration and junction temperature, and determine to be tested partly to lead
The test target temperature T of body devicej-test；
Step 3, control power supply (9) are electrically connected with semiconductor devices to be tested, to cause power supply (9) to semiconductor devices to be tested
Interior input current；
Step 4, after the time required to being powered to semiconductor devices, utilize junction temperature test system (8) to test the semiconductor devices
TSP parameters, and calculate the current junction temperature of semiconductor devices using the obtained TSP parameters of test；
If step 5, above-mentioned junction temperature test system test the junction temperature and test target temperature T for obtaining semiconductor devicesj-testBetween difference
When value is more than predetermined threshold value, 4 are repeated the above steps, until the junction temperature of semiconductor devices and test target temperature Tj-testBetween difference
Value is matched with predetermined threshold value, and performs step 6；
Step 6, control hot properties test system (1) and the electrical connection of semiconductor devices to be tested, to be surveyed using hot properties
Test system (1) tests the hot properties of semiconductor devices.
2. the hot properties method of testing according to claim 1 by electric current heating semiconductor, it is characterized in that：Institute
Semiconductor devices to be tested is stated for the semiconductor devices with TSP parameters, the TSP parameters of semiconductor devices include PN junction or Xiao Te
Conduction voltage drop of the base junction under the conditions of Constant Direct Current electric current.
3. the hot properties method of testing according to claim 1 by electric current heating semiconductor, it is characterized in that：Institute
State semiconductor devices to be tested by switch S1, switch S2, switch S3 respectively with hot properties test system (1), power supply (9) with
And junction temperature test system (8) connection；
Switch S1, switch S2 and switch S3 are connected with test controller (10), test controller (10) energy controlling switch S1, are opened
Close S2 and switch S3 on off state；When switching S1 closures, semiconductor devices to be tested can be with hot properties test system (1)
Electrical connection；When switching S2 closures, semiconductor devices to be tested is electrically connected with power supply (9)；When switching S3 closures, semiconductor to be tested
Device is electrically connected with junction temperature test system (8).
4. the hot properties method of testing according to claim 3 by electric current heating semiconductor, it is characterized in that：Institute
Power supply (9) is stated for constant-current source or constant pressure source, switch S1, switch S2, switch S3 type include IGBT, MOSFET or GTO.
5. a kind of hot properties test device by electric current heating semiconductor, it is characterized in that：Including for semiconductor
The power supply (9) of injection heating electric current in device, the junction temperature test system (8) for carrying out junction temperature test to semiconductor devices and
Hot properties test system (1) for testing semiconductor devices hot properties, hot properties test system (1), junction temperature test
System (8) and power supply (9) are electrically connected by on-off circuit with semiconductor devices to be tested, the on-off circuit, hot properties
Test system (1), junction temperature test system (8) and power supply (9) are electrically connected with test controller (10), test controller (10)
Semiconductor devices to be tested and hot properties test system (1), junction temperature test system can be controlled by the working condition of on-off circuit
The electrical connection of system (8) and/or power supply (9)；
Test controller (10) control power supply (9) is electrically connected with semiconductor devices to be tested, to cause power supply (9) to be tested half
Input current in conductor device；
After the time required to being powered to semiconductor devices, the TSP for testing the semiconductor devices using junction temperature test system (8) joins
Number, and the TSP parameters obtained using test calculate the current junction temperature of semiconductor devices；
If junction temperature test system test (8) obtains the junction temperature and test target temperature T of semiconductor devicesj-testBetween difference be more than
During predetermined threshold value, above-mentioned energization and test process are repeated, until the junction temperature of semiconductor devices and test target temperature Tj-testBetween
Difference is matched with predetermined threshold value；
Test controller (10) control hot properties test system (1) and the electrical connection of semiconductor devices to be tested, to utilize height
Temperature characteristics test system (1) tests the hot properties of semiconductor devices.
6. according to claim 5 by the hot properties test device of electric current heating semiconductor, it is characterized in that：It is described
On-off circuit includes switch S1, switch S2 and switch S3, and the semiconductor devices to be tested is by switching S1, switch S2, opening
S3 is closed to be connected with hot properties test system (1), power supply (2) and junction temperature test system (8) respectively；
Switch S1, switch S2 and switch S3 are connected with test controller (10), test controller (10) energy controlling switch S1, are opened
Close S2 and switch S3 on off state；When switching S1 closures, semiconductor devices to be tested can be with hot properties test system (1)
Electrical connection；When switching S2 closures, semiconductor devices to be tested is electrically connected with power supply (9)；When switching S3 closures, semiconductor to be tested
Device is electrically connected with junction temperature test system (8).
7. according to claim 6 by the hot properties test device of electric current heating semiconductor, it is characterized in that：It is described
Power supply (9) is constant-current source or constant pressure source, and switch S1, switch S2, switch S3 type include IGBT, MOSFET or GTO.
8. according to claim 5 by the hot properties test device of electric current heating semiconductor, it is characterized in that：It is described
Test controller (10) includes computer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710445784.2A CN107271878B (en) | 2017-06-14 | 2017-06-14 | Pass through the hot properties test method and device of electric current heating semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710445784.2A CN107271878B (en) | 2017-06-14 | 2017-06-14 | Pass through the hot properties test method and device of electric current heating semiconductor |
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| CN107271878A true CN107271878A (en) | 2017-10-20 |
| CN107271878B CN107271878B (en) | 2019-07-30 |
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| CN201710445784.2A Active CN107271878B (en) | 2017-06-14 | 2017-06-14 | Pass through the hot properties test method and device of electric current heating semiconductor |
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| CN (1) | CN107271878B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107943141A (en) * | 2017-11-28 | 2018-04-20 | 特变电工新疆新能源股份有限公司 | A kind of direct current transportation controls detecting system with IGBT junction temperatures |
| CN108387458A (en) * | 2018-05-04 | 2018-08-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Carbon nano-tube fibre mechanical property testing system at high operating temperatures and method |
| CN108562841A (en) * | 2018-06-14 | 2018-09-21 | 山东阅芯电子科技有限公司 | leakage current detection method and device in electronic component environmental aging test |
| CN109212399A (en) * | 2018-08-10 | 2019-01-15 | 全球能源互联网研究院有限公司 | A kind of semiconductor devices high-temperature electric characteristic test device and method |
| CN111999630A (en) * | 2020-10-28 | 2020-11-27 | 四川立泰电子有限公司 | Method and system for testing working junction temperature of power device |
| CN112730455A (en) * | 2020-12-24 | 2021-04-30 | 张家港迪源电子科技有限公司 | Intelligent semiconductor chip and device test system platform |
| CN112945418A (en) * | 2019-12-09 | 2021-06-11 | 圣邦微电子（北京）股份有限公司 | Temperature measuring device and temperature measuring method of integrated chip |
| CN113945293A (en) * | 2020-06-30 | 2022-01-18 | 长鑫存储技术有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN114441924A (en) * | 2022-04-11 | 2022-05-06 | 山东阅芯电子科技有限公司 | Narrow pulse conduction voltage drop test method and circuit suitable for power semiconductor device |
| US20220319884A1 (en) * | 2020-03-19 | 2022-10-06 | Changxin Memory Technologies, Inc. | Temperature calibration sheets and application methods thereof |
| CN116643139A (en) * | 2023-07-26 | 2023-08-25 | 广东芯聚能半导体有限公司 | Bias experiment method, bias experiment device, bias experiment equipment and bias experiment medium based on current heating device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000206201A (en) * | 1999-01-20 | 2000-07-28 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| CN2932407Y (en) * | 2006-06-20 | 2007-08-08 | 北京航空航天大学 | Steady-state working life test equipment capable of controlling transistor junction temperature |
| CN102590726A (en) * | 2012-02-23 | 2012-07-18 | 北京航空航天大学 | Analysis method for evaluating service life and reliability of power VMOS (Vertical Metal Oxide Semiconductor) tube |
| CN202794445U (en) * | 2012-09-05 | 2013-03-13 | 天津海瑞电子科技有限公司 | Novel high-temperature reverse bias testing machine |
| CN203178831U (en) * | 2013-02-06 | 2013-09-04 | 南京千韵电子科技有限公司 | Chip internal temperature control device and experimental instrument |
-
2017
- 2017-06-14 CN CN201710445784.2A patent/CN107271878B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000206201A (en) * | 1999-01-20 | 2000-07-28 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| CN2932407Y (en) * | 2006-06-20 | 2007-08-08 | 北京航空航天大学 | Steady-state working life test equipment capable of controlling transistor junction temperature |
| CN102590726A (en) * | 2012-02-23 | 2012-07-18 | 北京航空航天大学 | Analysis method for evaluating service life and reliability of power VMOS (Vertical Metal Oxide Semiconductor) tube |
| CN202794445U (en) * | 2012-09-05 | 2013-03-13 | 天津海瑞电子科技有限公司 | Novel high-temperature reverse bias testing machine |
| CN203178831U (en) * | 2013-02-06 | 2013-09-04 | 南京千韵电子科技有限公司 | Chip internal temperature control device and experimental instrument |
Non-Patent Citations (1)
| Title |
|---|
| 陈明 等: "高温功率循环下绝缘栅双极型晶体管失效特征及机理分析", 《西安交通大学学报》 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107943141A (en) * | 2017-11-28 | 2018-04-20 | 特变电工新疆新能源股份有限公司 | A kind of direct current transportation controls detecting system with IGBT junction temperatures |
| CN108387458A (en) * | 2018-05-04 | 2018-08-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Carbon nano-tube fibre mechanical property testing system at high operating temperatures and method |
| CN108562841A (en) * | 2018-06-14 | 2018-09-21 | 山东阅芯电子科技有限公司 | leakage current detection method and device in electronic component environmental aging test |
| CN109212399A (en) * | 2018-08-10 | 2019-01-15 | 全球能源互联网研究院有限公司 | A kind of semiconductor devices high-temperature electric characteristic test device and method |
| CN112945418A (en) * | 2019-12-09 | 2021-06-11 | 圣邦微电子（北京）股份有限公司 | Temperature measuring device and temperature measuring method of integrated chip |
| CN112945418B (en) * | 2019-12-09 | 2023-06-30 | 圣邦微电子（北京）股份有限公司 | Temperature measuring device and temperature measuring method of integrated chip |
| US20220319884A1 (en) * | 2020-03-19 | 2022-10-06 | Changxin Memory Technologies, Inc. | Temperature calibration sheets and application methods thereof |
| CN113945293A (en) * | 2020-06-30 | 2022-01-18 | 长鑫存储技术有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN113945293B (en) * | 2020-06-30 | 2023-04-18 | 长鑫存储技术有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN111999630A (en) * | 2020-10-28 | 2020-11-27 | 四川立泰电子有限公司 | Method and system for testing working junction temperature of power device |
| CN112730455A (en) * | 2020-12-24 | 2021-04-30 | 张家港迪源电子科技有限公司 | Intelligent semiconductor chip and device test system platform |
| CN114441924A (en) * | 2022-04-11 | 2022-05-06 | 山东阅芯电子科技有限公司 | Narrow pulse conduction voltage drop test method and circuit suitable for power semiconductor device |
| CN114441924B (en) * | 2022-04-11 | 2022-06-28 | 山东阅芯电子科技有限公司 | Narrow pulse conduction voltage drop test method and circuit suitable for power semiconductor device |
| CN116643139A (en) * | 2023-07-26 | 2023-08-25 | 广东芯聚能半导体有限公司 | Bias experiment method, bias experiment device, bias experiment equipment and bias experiment medium based on current heating device |
| CN116643139B (en) * | 2023-07-26 | 2023-10-27 | 广东芯聚能半导体有限公司 | Bias experiment method, bias experiment device, bias experiment equipment and bias experiment medium based on current heating device |
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