CN107267918A - Prepare the system and method for nano thin-film - Google Patents
Prepare the system and method for nano thin-film Download PDFInfo
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- CN107267918A CN107267918A CN201710349730.6A CN201710349730A CN107267918A CN 107267918 A CN107267918 A CN 107267918A CN 201710349730 A CN201710349730 A CN 201710349730A CN 107267918 A CN107267918 A CN 107267918A
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- Prior art keywords
- film
- nano thin
- pipeline
- anion
- cation
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
Abstract
Present invention announcement is a kind of to prepare the system and method for nano thin-film, wherein preparing the system of nano thin-film includes processing unit, plasma generator, arrangement for deflecting and shaped device；Arrangement for deflecting includes the first pipeline and the first magnet coil；Shaped device is provided with basic unit；The raw material for preparing nano thin-film is ionized into anion and cation by plasma generator；Anion or cation deflection are entered the first pipeline by the first magnet coil, anion or cation enter shaped device by the first pipeline, shaped device makes the anion obtain electronically forming atom or losing the anion electronically forming atom, and nano thin-film is formed in basic unit.The present invention substantially increases the quality of nano thin-film.
Description
Technical field
The present invention relates to nano thin-film field is prepared, a kind of system for preparing nano thin-film and side are especially related to
Method.
Background technology
Nano thin-film refers to be embedded in basic unit by size to be interconnected between the constituent element of nanometer scale (1~100nm)
The thin-film material formed, it has the superiority of conventional composite materials and modern both nano materials concurrently.Constituent element is generally nanometer
Powder, is also nano particle, refers generally to ultrafine particle of the size between 1-100nm, and its yardstick is more than cluster and small
In general particulate, the form of nano-powder has spherical, tabular, bar-shaped, horn shape, spongy etc., the composition of nano-powder is made
Can be metal, oxide or compound etc..In the prior art, prepare nano-powder and generally comprise solid-phase sequencing and liquid phase
The precipitation method, but nano-powder prepared by solid-phase sequencing does not possess chemism, and the granularity of nano-powder is uneven, liquid phase
Nano-powder impurity prepared by the precipitation method is more, so that after nano thin-film uses above-mentioned nano-powder as constituent element, quality is difficult to
Meet the requirement of high-end market.
The content of the invention
The main object of the present invention can be prepared to provide a kind of system and method for preparing nano thin-film using the system
Higher-quality nano thin-film.
The present invention proposes a kind of system for preparing nano thin-film, including processing unit, plasma generator, arrangement for deflecting with
Shaped device；
The arrangement for deflecting includes the first pipeline and the first magnet coil；
The shaped device is provided with basic unit；
One end of the processing unit conducting connection plasma generator, the other end of the plasma generator with
One end conducting connection of first pipeline, the other end conducting connection shaped device of first pipeline；
Raw material is ionized into anion and cation by the plasma generator；
First magnet coil closes on first pipeline and turns on the one end being connected setting with plasma generator, and will
Anion or the cation deflection enters the first pipeline, and the anion or cation are entered by first pipeline
The shaped device；
The shaped device makes the anion obtain electronically forming atom or losing the cation electronically forming original
Son, nano thin-film is formed in the basic unit.
Further, preparing the system of nano thin-film also includes head tank；
The processing unit includes oil expeller, dehydrater and heater box, the head tank conducting connection oil expeller, institute
State the oil expeller conducting connection dehydrater, the dehydrater conducting connection heater box, the heater box conducting connection institute
State plasma generator.
Further, the processing unit is connected with plasma generator by accelerator conducting, the accelerator
Including Laval nozzle, the collapsible tube conducting connection heater box of the Laval nozzle, the expansion of the Laval nozzle
The pipe conducting connection plasma generator.
Further, the accelerator also includes heating jacket, and the heating jacket is coated on the Laval nozzle
Outer wall.
Further, preparing the system of nano thin-film also includes byproduct collection device, the byproduct collection device bag
Include second pipe, electrostatic generator and collecting tank, one end conducting connection first pipeline of the second pipe, and with it is described
Point-blank, the plasma generator vertical conducting connects what first pipeline was connected with second pipe to first pipeline
One end, the other end conducting connection collecting tank of the second pipe, the electrostatic generator closes on the collecting tank and is located at
In the second pipe.
Further, the shaped device include the second magnet coil and seal box, the seal box include deflector with
Collection assembly；
The seal box of the first pipeline conducting connection shaped device；
Second magnet coil closes on one end setting that first pipeline connects the seal box；
The basic unit is on collection assembly；
The collection assembly is in the seal box, and the deflector is arranged on first pipeline and connects the sealing
One end port of case, second magnet coil coordinates with deflector is oriented to the basic unit by the anion or cation.
Further, the collection assembly include conveyer, the conveyer include blowing wheel, the first directive wheel,
Second directive wheel and rewinding wheel；
The blowing wheel winds the basic unit, and the basic unit is sent to rewinding by the first directive wheel and the second directive wheel
Wheel；
The collection assembly is by setting electrostatic occurrence and distribution device to make the anion obtain electronically forming atom or make institute
State cation and lose and electronically form atom；
It is described quiet in the one side of basic unit of the nano thin-film formation between first directive wheel and the second directive wheel
The another side for the basic unit that electric occurrence and distribution device is closed between first directive wheel and the second directive wheel is set.
Further, the system for preparing nano thin-film is additionally provided with vacuum controller, is for what regulation prepared nano thin-film
Vacuum inside system.
Further, it is described to prepare described in the system of nano thin-film conducting and be connected as connecting by conduit, the conduit
On be provided with valve.
The present invention also proposes a kind of method for preparing nano thin-film using the above-mentioned system for preparing nano thin-film, including with
Lower step：
The raw material enters the plasma generator in vacuum environment after water removal, oil removing, heating；
Become cation and anion in the presence of the plasma generator；
The cation or anion enter first pipeline in the presence of first deflection coil；
The anion or cation enter the shaped device by first pipeline；
The shaped device makes the anion obtain electronically forming atom or losing the cation electronically forming original
Son, nano thin-film is formed in basic unit.
Beneficial effects of the present invention：After the processing such as raw material is removing water by processing unit, oil removing, heating, it is to avoid nanometer
There is more impurity after shaping is prepared and influence quality in film, when raw material is gaseous state, processing unit can be entered to raw material
Row heating, to increase the chemism of raw material, is more easy to become ionised into cation and the moon when making raw material by plasma generator
Ion, when raw material is not gaseous state, raw material can be heated to gaseous state by processing unit, and cation or anion are in the first magnet coil
Deflecting action under shaped device is entered by the first pipeline, nano thin-film is formed in basic unit；Processing unit is filled by accelerating
When putting connection plasma generator, the flow velocity of raw material can be increased, the activity of raw material is further increased, nano-powder is refined,
The granularity of even powder, substantially increases the quality of nano thin-film, also increases operating efficiency, and the present invention is with thing
Based on reason reaction, it is to avoid foreign ion is difficult to the shortcoming separated in chemical reaction, improves the purity of nano thin-film.
Brief description of the drawings
Fig. 1 is a kind of structural representation of system for preparing nano thin-film of one embodiment of the invention；
Fig. 2 is a kind of flow chart of method for preparing nano thin-film of one embodiment of the invention.
The realization, functional characteristics and advantage of the object of the invention will be described further referring to the drawings in conjunction with the embodiments.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It is to be appreciated that institute is directional in the embodiment of the present invention indicates that (such as up, down, left, right, before and after ...) is only used
In explaining relative position relation, motion conditions under a certain particular pose (as shown in drawings) between each part etc., if should
When particular pose changes, then directionality indicates also correspondingly therewith to change, and described connection can be directly connected to,
Can be indirectly connected with.
In addition, in the present invention such as relating to the description of " first ", " second " etc. be only used for describe purpose, and it is not intended that
Indicate or imply its relative importance or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ",
At least one this feature can be expressed or be implicitly included to the feature of " second ".In addition, the technical side between each embodiment
Case can be combined with each other, but must can be implemented as basis with those of ordinary skill in the art, when the combination of technical scheme
It will be understood that the combination of this technical scheme is not present, also not in the guarantor of application claims when appearance is conflicting or can not realize
Within the scope of shield.
Reference picture 1, a kind of system for preparing nano thin-film of one embodiment of the invention, including processing unit, plasma hair
Raw device 7, arrangement for deflecting and shaped device；Arrangement for deflecting includes the first pipeline 16 and the first magnet coil 17；Shaped device is set
There is basic unit 22；One end of processing unit conducting connection plasma generator 7, the other end of plasma generator 7 and the first pipeline
16 one end conducting connection, the other end conducting connection shaped device of the first pipeline 16；Raw material is ionized into by plasma generator 7
Anion and cation；First magnet coil 17 closes on the first pipeline 16 and turns on the one end being connected setting with plasma generator 7,
And anion or cation deflection are entered into the first pipeline 16, anion or cation are entered by the first pipeline 16 to be molded
Device, shaped device makes anion obtain electronically forming atom or losing cation electronically forming atom, the shape in basic unit 22
Into nano thin-film.
After the processing such as the raw material of the present invention is removing water by processing unit, oil removing, heating, it is to avoid nano thin-film is in preparation
There is more impurity after shaping and influence quality, when raw material is gaseous state, processing unit can be heated to raw material, to increase
Plus the chemism of raw material, raw material is become ionised into cation and anion by being more easy to during plasma generator 7, work as raw material
When being not gaseous state, raw material can be heated to gaseous state by processing unit, and cation or anion are made in the deflection of the first magnet coil 17
Shaped device entered by the first pipeline 16 with lower, nano thin-film is formed in basic unit 22.
In the present embodiment, processing unit is pre-processed to the raw material for preparing nano thin-film, removes doping in the feed
Impurity, to improve the quality of nano thin-film, pretreatment can be water removal, oil removing, heating etc..Raw material is generally gaseous state, is preparing
It is typically stored at before nano thin-film in head tank 1, it is necessary to when preparing nano thin-film, be released from head tank 1.Processing unit is in processing
Before raw material be in vacuum state, it will be understood that between each device can mutual conduction, so processing raw material before also be vacuum shape
State, it is ensured that do not have other impurities in the system for preparing nano thin-film, also ensure that raw material is successfully ionized into by plasma generator 7
Anion and cation, with certain flow velocity when also making the raw material be released from head tank 1；, can be with when raw material is not gaseous state
Gaseous state is heated to by processing unit.Plasma generator 7 ionizes the raw material after processing after cation and anion, to deflect
Device can select cation or anion deflection entering the first pipeline 16, and be filled by the first pipeline 16 into shaping
Put, in order that effect when preparing nano thin-film is carried out, plasma generator 7 can be horizontally disposed with, the first pipeline 16 is vertical
Set；Arrangement for deflecting can use the first magnet coil 17, be more easy to using the first magnet coil 17 by anion or cation
Deflection enter the first pipeline 16, it will be understood that when using other devices can make anion or cation be easier to deflect into
When entering the first pipeline 16, other devices can also be used.In addition, in embodiments of the invention, alleged raw material does not include basic unit 22,
Anion can be after electronics be obtained or cation forms alignment layer 10 after electronics is lost in basic unit 22, in alignment layer 10
It is nano thin-film that each atom, which links together, or in basic unit 22 formed alignment layer 10 after anion obtain again electronics or
Person's cation loses electronics again, forms nano thin-film.
In one embodiment of this invention, preparing the system of nano thin-film also includes head tank 1；Processing unit includes oil removing
Device 2, dehydrater 3 and heater box 4, the conducting connection oil expeller 2 of head tank 1, the conducting connection dehydrater 3 of oil expeller 2, dehydrater 3 are led
Lead to and connect heater box 4, the conducting connection plasma generator 7 of heater box 4.Head tank 1 is used to store gaseous state or other states
Raw material, when needing to prepare nano thin-film, raw material is released from head tank 1, by oil expeller 2, dehydrater 3 with heating
Afterwards, just, to remove the impurity in raw material, the quality of nano thin-film is improved into plasma generator 7.
In one embodiment of this invention, processing unit is connected with plasma generator 7 by accelerator conducting, is accelerated
Device includes Laval nozzle 5, and the collapsible tube conducting connection heater box 4 of Laval nozzle 5, the expansion pipe of Laval nozzle 5 is led
Lead to and connect plasma generator 7.In an alternative embodiment of the invention, accelerator also includes heating jacket 6, and heating jacket 6 is wrapped
Overlay on the outer wall of Laval nozzle 5.After Laval nozzle 5, raw material can be made to add automatically when passing through Laval nozzle 5
Speed, it is not necessary to which other power set can accelerate raw material, is saved after production cost, and raw material acceleration, can be made last
The nano-powder drawn is thinner, granularity evenly, and activity it is higher.In the outer wall of Laval nozzle 5, heating jacket 6 is set, it is ensured that
Raw material is when by Laval nozzle 5, and temperature will not be reduced, and then influences plasma generator 7 to ionization of raw material etc..
In one embodiment of this invention, in addition to byproduct collection device, byproduct collection device includes second pipe
18th, electrostatic generator 19 and collecting tank 20, one end conducting the first pipeline 16 of connection of second pipe 18, and exist with the first pipeline 16
On straight line, the vertical conducting of plasma generator 7 connects one end that the first pipeline 16 is connected with second pipe 18, second pipe
18 other end conducting connection collecting tank 20, electrostatic generator 19 closes on collecting tank 20 in second pipe 18, and raw material passes through
After plasma generator 7 is ionized, under the Lorentz force effect of the generation of the first magnet coil 17, anion or cation point
The first pipeline 16 or second pipe 18 Pian Zhuan not entered.When needing selection anion as synthesis nano thin-film, selection is cloudy
Ion deflecting enter the first pipeline 16, it is not necessary to cation deflection enter second pipe 18；When need select cation conduct
Synthesize nano thin-film when, selection cation deflection enter the first pipeline 16, it is not necessary to anion deflection enter second pipe 18；
The electronics produced into the cation or anion of second pipe 18 with electrostatic generator 19 combines to form accessory substance and enters receipts
Collect in tank 20, electrostatic generator 19 closes on collecting tank 20 and set, it is to avoid ion of the influence into the first pipeline 16.
In one embodiment of this invention, shaped device includes the second magnet coil 8 and seal box 14, and seal box 14 includes
Deflector 9 and collection assembly；The seal box 14 of first pipeline 16 conducting connection shaped device；Second magnet coil 8 closes on first
One end of the connection seal box 14 of pipeline 16 is set；Basic unit 22 is on collection assembly；Collection assembly is in seal box 14, water conservancy diversion
Plate 9 is arranged on one end port that the first pipeline 16 connects seal box 14, and the second magnet coil 8 coordinates anion with deflector 9
Or cation is oriented to basic unit 22.The yawing moment of anion or cation can be controlled by the second magnet coil 8, make the moon
Ion or cation efflux are listed in basic unit 22, link anion or cation, can be by setting caliper profiler to make
Anion or cation is set entirely to be arranged in basic unit 22；Deflector 9 exceeds when preventing anion or cation from deflecting
The receivable scope of basic unit 22.When the atom of formation does not link together, other instruments can be used to collect, as
Nano-powder is used.
In one embodiment of this invention, collection assembly includes conveyer, and conveyer is led including blowing wheel 12, first
To the 11, second directive wheel of wheel 13 and rewinding wheel 15；Blowing wheel 12 winds basic unit 22, and basic unit 22 passes through the first directive wheel 11 and second
Directive wheel 13 is sent to rewinding wheel 15；Basic unit 22 of the nano thin-film formation between the first directive wheel 11 and the second directive wheel 13
On simultaneously, collection assembly is by setting electrostatic occurrence and distribution device 23 to make anion obtain electronically forming atom or losing anion
Electronically form atom；The basic unit 22 that electrostatic occurrence and distribution device 23 is closed between the first directive wheel 11 and the second directive wheel 13 it is another
Face is set.The setting of conveyer, which can be realized, persistently prepares nano thin-film, and electrostatic occurrence and distribution device 23 produces electronics, make it is cloudy from
Son obtains electronically forming atom or losing cation electronically forming atom, it will be understood that in basic unit 22 can also from having electronic,
Realize above-mentioned purpose, the power of conveyer transmission can be arranged on blowing wheel 12, the first directive wheel 11, the second directive wheel 13 with
It is any one or more in rewinding wheel 15.
In one embodiment of this invention, conducting is connected as connecting by conduit, and valve, convenient control are provided with conduit
System, specifically, is additionally provided with vacuum controller 21, the vacuum of the internal system of nano thin-film, vacuum control is prepared for regulation
Device 21 can be connected with the conducting of seal box 14.
The present invention also proposes a kind of method for preparing nano thin-film, comprises the following steps：
S1, raw material enter plasma generator 7 in vacuum environment after water removal, oil removing, heating.
S2, in the presence of plasma generator 7 become cation and anion.
S3, cation or anion enter the first pipeline 16 in the presence of the first deflection coil.
S4, anion or cation enter shaped device by the first pipeline 16.
S5, shaped device make anion obtain electronically forming atom or losing cation electronically forming atom, in basic unit
22 form nano thin-film.
In one embodiment, using methane gas as raw material, methane gas in vacuum environment through water removal, oil removing,
Enter plasma generator 7 after heating, become hydrogen ion and carbon ion in the presence of plasma generator 7, carbon ion
Enter the first pipeline 16 in the presence of first deflection coil, base is oriented under guide effect of second magnet coil 8 with deflector 9
Interconnected alignment layer 10 is formed in 22 one side of layer, collection assembly produces electronics by electrostatic occurrence and distribution device 23, makes carbon ion
Obtain electronically forming atom, the graphene film of atomic level, i.e. nano thin-film are formed in basic unit 22.It is appreciated that working as makes
During with other raw materials, this method can equally be realized.
After the processing such as the raw material of the present invention is removing water by processing unit, oil removing, heating, it is to avoid nano thin-film is in preparation
There is more impurity after shaping and influence quality, when raw material is gaseous state, processing unit can be heated to raw material, to increase
Plus the chemism of raw material, it is more easy to become ionised into cation and anion when making raw material by plasma generator, works as raw material
When being not gaseous state, raw material can be heated to gaseous state by processing unit, the deflecting action of cation or anion in the first magnet coil
Shaped device is entered by the first pipeline down, nano thin-film is formed in basic unit 22；Processing unit is connected by accelerator
During ion generator, the flow velocity of raw material can be increased, the activity of raw material is further increased, nano-powder, even is refined
The granularity of powder, substantially increases the quality of nano thin-film, also increases operating efficiency.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize
Equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, be included within the scope of the present invention.
Claims (10)
1. a kind of system for preparing nano thin-film, it is characterised in that including processing unit, plasma generator, arrangement for deflecting with
Shaped device；
The arrangement for deflecting includes the first pipeline and the first magnet coil；
The shaped device is provided with basic unit；
One end of the processing unit conducting connection plasma generator, the other end of the plasma generator and first
One end conducting connection of pipeline, the other end conducting connection shaped device of first pipeline；
Raw material is ionized into anion and cation by the plasma generator；
First magnet coil closes on first pipeline and turns on the one end being connected setting with plasma generator, and will be described
Anion or cation deflection enter the first pipeline, and the anion or cation enter described by first pipeline
Shaped device；
The shaped device makes the anion obtain electronically forming atom or losing the cation electronically forming atom,
Nano thin-film is formed in the basic unit.
2. the system as claimed in claim 1 for preparing nano thin-film, it is characterised in that also including head tank；
The processing unit includes oil expeller, dehydrater and heater box, and the head tank conducting connection oil expeller is described to remove
The oily device conducting connection dehydrater, the dehydrater, which is turned on, connects the heater box, and the heater box conducting connection is described etc.
Ion generator.
3. the system as claimed in claim 2 for preparing nano thin-film, it is characterised in that the processing unit occurs with plasma
Device is turned on by accelerator and connected, and the accelerator includes Laval nozzle, and the collapsible tube of the Laval nozzle is turned on
Connect the heater box, the expansion pipe conducting connection plasma generator of the Laval nozzle.
4. the system as claimed in claim 3 for preparing nano thin-film, it is characterised in that the accelerator also includes heating folder
Set, the heating jacket is coated on the Laval nozzle outer wall.
5. the system as claimed in claim 1 for preparing nano thin-film, it is characterised in that also including byproduct collection device, institute
Stating byproduct collection device includes second pipe, electrostatic generator and collecting tank, one end conducting connection institute of the second pipe
The first pipeline is stated, and, the plasma generator vertical conducting connection described first. with first pipeline point-blank
One end that pipeline is connected with second pipe, the other end conducting connection collecting tank of the second pipe, the electrostatic occurs
Device closes on the collecting tank in the second pipe.
6. the system as claimed in claim 1 for preparing nano thin-film, it is characterised in that the shaped device includes the second electromagnetism
Coil and seal box, the seal box include deflector and collection assembly；
The seal box of the first pipeline conducting connection shaped device；
Second magnet coil closes on one end setting that first pipeline connects the seal box；
The basic unit is on collection assembly；
The collection assembly is in the seal box, and the deflector is arranged on first pipeline and connects the seal box
One end port, second magnet coil coordinates with deflector is oriented to the basic unit by the anion or cation.
7. the system as claimed in claim 6 for preparing nano thin-film, it is characterised in that the collection assembly includes transmission and filled
Put, the conveyer includes blowing wheel, the first directive wheel, the second directive wheel and rewinding wheel；
The blowing wheel winds the basic unit, and the basic unit is sent to rewinding wheel by the first directive wheel and the second directive wheel；
The collection assembly is by setting electrostatic occurrence and distribution device to make the anion obtain electronically forming atom or make the sun
Ion, which loses, electronically forms atom；
In the one side of basic unit of the nano thin-film formation between first directive wheel and the second directive wheel, the electrostatic hair
The another side for the basic unit that raw distributor is closed between first directive wheel and the second directive wheel is set.
8. the system as claimed in claim 1 for preparing nano thin-film, it is characterised in that vacuum controller is additionally provided with, for adjusting
The vacuum of the internal system of the standby nano thin-film of restraining.
9. the system for preparing nano thin-film as described in claim 1-8, it is characterised in that the conducting is connected as by conduit
Valve is provided with connection, the conduit.
10. the method that a kind of any one of the utilization claim 1-9 system for preparing nano thin-film prepares nano thin-film, it is special
Levy and be, comprise the following steps：
The raw material enters the plasma generator in vacuum environment after water removal, oil removing, heating；
Become cation and anion in the presence of the plasma generator；
The cation or anion enter first pipeline in the presence of first deflection coil；
The anion or cation enter the shaped device by first pipeline；
The shaped device makes the anion obtain electronically forming atom or losing the cation electronically forming atom,
Basic unit forms nano thin-film.
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| CN201710349730.6A CN107267918A (en) | 2017-05-17 | 2017-05-17 | Prepare the system and method for nano thin-film |
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| CN201710349730.6A CN107267918A (en) | 2017-05-17 | 2017-05-17 | Prepare the system and method for nano thin-film |
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| CN105755442A (en) * | 2015-11-06 | 2016-07-13 | 北京师范大学 | Method for preparing DLC (diamond-like carbon) thick films by means of efficient magnetic filter plasma deposition |
| CN106000227A (en) * | 2016-07-13 | 2016-10-12 | 张启辉 | System for preparing powder with gas phase and liquid phase |
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