CN107240549B - A kind of production method of GaN HEMT device - Google Patents
A kind of production method of GaN HEMT device Download PDFInfo
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- CN107240549B CN107240549B CN201710587247.1A CN201710587247A CN107240549B CN 107240549 B CN107240549 B CN 107240549B CN 201710587247 A CN201710587247 A CN 201710587247A CN 107240549 B CN107240549 B CN 107240549B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 238000011161 development Methods 0.000 claims abstract description 20
- 238000001259 photo etching Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 12
- 238000005036 potential barrier Methods 0.000 abstract description 10
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of production method of GaN HEMT device, comprising the following steps: p-type GaN area of grid and the hole p-type GaN injector region S1, are formed in GaN HEMT structure；S2, the preparation of source and drain Ohmic contact；S3, active isolated area is formed in GaN HEMT structure；S4, hole injector region is opened by photoetching development mode, deposit W metal and remove；S5, W metal is aoxidized to form the hole NiO injector；S6, area of grid is opened by photoetching development mode, prepares grid in area of grid；S7, grid, source electrode, drain electrode and hole injector region, connection drain electrode and the hole NiO injector are opened by photoetching development mode, and grid, source electrode, drain electrode are thickeied respectively.The present invention increases hole injector between grid and drain electrode, and hole is injected into AlGaN potential barrier surface to compensate the electronics captured by trap, to reduce exhausting for channel two-dimensional electron gas, enhances device anti-current avalanche ability.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to a kind of production method of GaN HEMT device.
Background technique
GaN material makes the GaN HEMT device of its substrate have high breakdown voltage, height using its wider forbidden bandwidth
Current density and low conducting resistance, be the core devices of modern electric Transmission system.GaN HEMT is as power electronics device
The most important condition of part is enhanced operating mode, and the hot spot of scientific research circle and industrial circle is the GaN HEMT device with p-type GaN grid
Part, specific practice is one layer of p-type GaN layer of insertion between gate metal and AlGaN potential barrier, by PN built in field by lower section
Triangular quantum well at AlGaN/GaN heterojunction boundary is raised on fermi level, to form enhancement type channel.With grinding
That studies carefully gos deep into, and p-type GaN gate technique also encounters bottleneck.In process above technology, need to remove grid using dry etching
With the p-type GaN of exterior domain, the inevitable AlGaN potential barrier table between grid and source, drain region of plasma bombardment
Face generates defect, and gate electron is injected into AlGaN potential barrier surface when the generation of defect can accelerate device to work under high pressure, into
And current collapse phenomenon is generated, when the GaN power electronic devices being especially applied under high-voltage great-current, current collapse phenomenon is non-
Chang Mingxian.Therefore there is an urgent need to improve the anti-current avalanche ability of device.
The inhibition current collapse ability with the enhanced GaN HEMT device of p-type GaN grid is improved, industry is commonly square
Method has following four: one, optimizing epitaxial growth conditions, reduce the defect density in GaN buffer layer and AlGaN potential barrier；Two, change
Into and optimized etching method, reduce etching grid region except p-type GaN when to retain AlGaN potential barrier surface caused by damage
Wound；Three, high field area between the gate and the drain introduces p-type GaN electrode, empty for injecting under High-Field to the surface AlGaN
Cave is lost to reduce channel electrons, has the function that inhibit current collapse；Four, replace Si substrate using GaN substrate, reduce brilliant
Lattice mismatch improves epitaxial structure quality.But above method, realize that difficulty is higher in technique, and to being not obvious.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods for greatly promoting enhancement device and inhibiting current collapse ability.
To reach above-mentioned requirements, the technical solution adopted by the present invention is that: a kind of production method of GaN HEMT device is provided,
The following steps are included:
S1, p-type GaN area of grid and the hole p-type GaN note are formed in the GaN HEMT structure that surface includes p-type GaN layer
Enter polar region domain；
S2, source electrode and drain electrode is prepared in the GaN HEMT structure for forming area of grid and hole injector region, it is described
Hole injector region is between source electrode and drain electrode；
S3, active isolated area is formed in the GaN HEMT structure for having source electrode and drain electrode；
S4, the hole injector opened by photoetching development mode in the GaN HEMT structure for forming active isolated area
The W metal except the injector region of hole in described one layer of W metal of GaN HEMT structure surface deposition, and is removed in region；
S5, oxidation processes are carried out to the GaN HEMT structure for having removed W metal, W metal is aoxidized to form the hole NiO note
Enter pole；
S6, the gate regions are opened by photoetching development mode in the GaN HEMT structure with the hole NiO injector
Domain prepares grid in area of grid；
S7, grid, source electrode, drain electrode and hole injector region are opened by photoetching development mode, connection drain electrode and NiO are empty
Cave injector, and grid, source electrode, drain electrode are thickeied respectively.
Compared with prior art, the invention has the following advantages that
(1) increase hole injector between grid and drain electrode, hole is injected into AlGaN potential barrier surface to compensate quilt
The electronics of trap capture enhances device anti-current avalanche ability to reduce exhausting for channel two-dimensional electron gas；
(2) using the NiO formed by thermal oxidation process as hole injector, it can maximize to inject hole and arrive
AlGaN potential barrier surface reduces exhausting for channel two-dimensional electron gas, is conducive to the quantity for promoting hole injection, to greatest extent
Reduce device current avalanche phenomenon；
(3) in technique realization, W metal can accurately be distributed in device high field area by lithography stripping, be easy by oxygen
Change forms high quality NiO, is conducive to prepare high reliability power electronic devices, processing compatibility is high.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, at this
The same or similar part, the illustrative embodiments and their description of the application are indicated using identical reference label in a little attached drawings
For explaining the application, do not constitute an undue limitation on the present application.In the accompanying drawings:
Fig. 1 is flow diagram of the invention；
Fig. 2 is the device architecture schematic diagram formed after step S1；
Fig. 3 is the device architecture schematic diagram formed after step S2；
Fig. 4 is the device architecture schematic diagram formed after step S3；
Fig. 5 is the device architecture schematic diagram formed after step S4；
Fig. 6 is the device architecture schematic diagram formed after step S5；
Fig. 7 is the device architecture schematic diagram formed after step S6；
Fig. 8 is the device architecture schematic diagram formed after step S7.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with drawings and the specific embodiments, to this
Application is described in further detail.For the sake of simplicity, it is omitted that well known to a person skilled in the art certain skills in being described below
Art feature.
As shown in Figure 1, the GaN HEMT structure of the present embodiment include from bottom to up substrate, AlN nucleating layer, GaN buffer layer,
AlN insert layer and AlGaN potential barrier have p-type GaN layer, the production method packet of the GaN HEMT device in the AlGaN potential barrier
Include following steps:
S1, p-type GaN area of grid 1 and the hole p-type GaN are formed in the GaN HEMT structure that surface includes p-type GaN layer
Injector region 2；
Step S1 specifically: with AZ5214 photoresist to protect exposure mask, the protection of area of grid 1 is formed by photoetching development and is covered
Exposure mask is protected in film and hole injector region 2, protects exposure mask and hole injector region using dry etching removal area of grid 1
P-type GaN layer except 2 protection exposure masks, etching gas Cl2, buffer gas Bcl3, etching power are 300W, etch period
1min forms p-type GaN area of grid 1 and the hole p-type GaN injector region 2, as shown in Figure 2.
S2, source electrode 3 and drain electrode 4 are prepared in the GaN HEMT structure for forming area of grid 1 and hole injector region 2,
Hole injector region 2 is located between source electrode 3 and drain electrode 4；
Step S2 specifically: Ohmic electrode region is formed by photoetching development, ohm gold is deposited in GaN HEMT structure
Belong to, ohmic metal is Ti, Al, Ni and Au that electron beam successively evaporates, and thickness is followed successively by 20nm, 160nm, 50nm and 100nm；With
Nlof2020 photoresist is metal-stripping exposure mask, and wet process removes the ohmic metal except Ohmic electrode region, then carries out ohm
Metal alloy reaction, ohmic metal alloy reaction is is heat-treated 30s in a nitrogen atmosphere, and heat treatment temperature is 870 DEG C, thus shape
At source electrode 3 and drain electrode 4, hole injector region 2 is located between source electrode 3 and drain electrode 4, as shown in Figure 3.
S3, active isolated area 5 is formed in the GaN HEMT structure for having source electrode 3 and drain electrode 4；
Exposure mask is protected by active area of AZ4210 photoresist, active area protection is formed by photoetching development, using multipotency amount B
Ion implanting, energy are respectively 20keV, 60keV and 80keV, dosage 1X1013cm-2, the active isolated area 5 of device is formed, such as
Shown in Fig. 4.
S4, hole injector region 2 is opened by photoetching development mode, in GaN HEMT structure surface electronic beam evaporation gold
Belong to Ni, formed Ni metal layer 6, Ni metal layer 6 with a thickness of 2-50nm, using AZ5214 photoresist as metal-stripping exposure mask, wet process
The W metal except hole injector region 2 is removed, as shown in Figure 5；
S5, oxidation processes are carried out to the GaN HEMT structure for having removed W metal, W metal is aoxidized to form the hole NiO note
Enter pole 7, as shown in Figure 6；
Herein, mode of oxidizing is thermal oxide, and oxidizing temperature is 500-600 DEG C, and oxidation protection gas is oxygen, oxidization time
For 10-60min.
S6, the gate regions are opened by photoetching development mode in the GaN HEMT structure with the hole NiO injector 7
Domain 1 prepares grid 8 in area of grid 1；
Step S6 specifically: area of grid 1 is opened by photoetching development mode, in the GaN with the hole NiO injector 7
Beamlet evaporates gate metal in HEMT structure, and gate metal is followed successively by Ni and Au, and thickness is respectively 50nm and 300nm；With
AZ5214 photoresist is metal-stripping exposure mask, and wet process removes the gate metal except area of grid 1, the metal on area of grid 1
Grid 8 is formed, as shown in Figure 7.
S7, grid 8, source electrode 3, drain electrode 4 and hole injector region 2 are opened by photoetching development mode, connection drain electrode 4 with
The hole NiO injector 7, and grid 8, source electrode 3, drain electrode 4 are thickeied respectively.
Step S7 specifically: grid 8, source electrode 3, drain electrode 4 and hole injector region 2 are opened by photoetching development mode,
Drain electrode 4 is connected to hole injector region 2, in the GaN HEMT structure surface electronic beam evaporation electrode metal 9, electrode gold
Belong to 9 and be followed successively by Ni and Au, thickness is respectively 50nm and 300nm；Using AZ5214 photoresist as metal-stripping exposure mask, wet process removes grid
Electrode metal except pole 8, source electrode 3,4 top of drain electrode, forms the grid 8, source electrode 3 and drain electrode 4 of thickening, completes a whole set of device work
Skill, as shown in Figure 8.
Above embodiments only indicate several embodiments of the invention, and the description thereof is more specific and detailed, but can not manage
Solution is limitation of the scope of the invention.It should be pointed out that for those of ordinary skill in the art, not departing from this hair
Under the premise of bright design, various modifications and improvements can be made, these belong to the scope of the present invention.Therefore of the invention
Protection scope should be subject to claim.
Claims (9)
1. a kind of production method of GaNHEMT device, which comprises the following steps:
S1, gate protection exposure mask and hole injector locality protection are formed in the GaNHEMT structure that surface includes p-type GaN layer
Exposure mask removes the p-type GaN layer except gate protection exposure mask and hole injector locality protection exposure mask, forms p-type GaN grid and P
The hole type GaN injector region；
S2, source electrode and drain electrode, the hole note are prepared in the GaNHEMT structure for forming area of grid and hole injector region
Enter polar region domain to be located between area of grid and drain electrode；
S3, active isolated area is formed in the GaNHEMT structure for having source electrode and drain electrode；
S4, hole injector region opened by photoetching development mode in the GaNHEMT structure for forming active isolated area,
One layer of W metal is deposited in the GaNHEMT body structure surface, and removes the W metal except the injector region of hole；
S5, oxidation processes are carried out to the GaNHEMT structure for having removed W metal, W metal is aoxidized to form the hole NiO injector；
S6, the area of grid opened by photoetching development mode in the GaNHEMT structure with the hole NiO injector,
Area of grid prepares grid；
S7, grid, source electrode, drain electrode and hole injector region are opened by photoetching development mode, connection drain electrode is infused with the hole NiO
Enter pole, and grid, source electrode, drain electrode are thickeied respectively.
2. the production method of GaNHEMT device according to claim 1, which is characterized in that the protection in the step S1
Exposure mask is photoresist, silicon oxide or silicon nitride, and the method for removal p-type GaN layer is dry etching or oxidation Aided Wet corrosion.
3. the production method of GaNHEMT device according to claim 1, which is characterized in that the step S2 specifically:
It is formed in the GaNHEMT structure in area of grid and hole injector region and Ohmic electrode region is formed by photoetching development,
Ohmic metal is deposited in GaNHEMT structure, progress ohmic metal alloy is anti-after removing the ohmic metal except Ohmic electrode region
It answers, forms source electrode and drain electrode, hole injector region is located between area of grid and drain electrode.
4. the production method of GaNHEMT device according to claim 3, which is characterized in that ohm in the step S2
Metal sequentially consists of Ti, Al, Ni and Au, and thickness is followed successively by 20nm, 160nm, 50nm and 100nm.
5. the production method of GaNHEMT device according to claim 1, which is characterized in that W metal in the step S4
With a thickness of 2-50nm.
6. the production method of GaNHEMT device according to claim 1, which is characterized in that oxidation side in the step S5
Formula is thermal oxide, and oxidizing temperature is 500-600 DEG C, and oxidation protection gas is oxygen, oxidization time 10-60min.
7. the production method of GaNHEMT device according to claim 1, which is characterized in that the step S6 specifically: logical
It crosses photoetching development mode and opens the area of grid, grid gold is deposited in the GaNHEMT structure with the hole NiO injector
Belong to, remove the gate metal except area of grid, the gate metal on area of grid forms grid.
8. the production method of GaNHEMT device according to claim 7, which is characterized in that the grid in the step S6
Metal is followed successively by Ni and Au, and thickness is respectively 50nm and 300nm.
9. the production method of GaNHEMT device according to claim 1, which is characterized in that the step S7 specifically: logical
It crosses photoetching development mode and opens grid, source electrode, drain electrode and hole injector region, will drain and hole injector regional connectivity,
In the GaNHEMT body structure surface deposition of electrode metal, and the electrode metal except grid, source electrode, drain electrode top is removed, is formed
Grid, source electrode and the drain electrode of thickening.
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| CN110444597B (en) * | 2018-05-03 | 2021-03-19 | 苏州捷芯威半导体有限公司 | Semiconductor device and method for manufacturing the same |
| CN111527610A (en) * | 2020-03-23 | 2020-08-11 | 英诺赛科（珠海）科技有限公司 | Semiconductor device and method for manufacturing the same |
| CN112614778B (en) * | 2020-12-18 | 2024-06-04 | 江苏能华微电子科技发展有限公司 | Method and device for forming multifunctional p-GaN electrode in GaN HEMT device |
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| CN103137681A (en) * | 2011-12-01 | 2013-06-05 | 台湾积体电路制造股份有限公司 | Circuit structure having islands between source and drain |
| CN105720097A (en) * | 2016-04-28 | 2016-06-29 | 中国科学院半导体研究所 | Enhanced-mode high electron mobility transistor, preparation method thereof, and semiconductor device |
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| CN103137681A (en) * | 2011-12-01 | 2013-06-05 | 台湾积体电路制造股份有限公司 | Circuit structure having islands between source and drain |
| CN105720097A (en) * | 2016-04-28 | 2016-06-29 | 中国科学院半导体研究所 | Enhanced-mode high electron mobility transistor, preparation method thereof, and semiconductor device |
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