CN109742142A - A kind of GaN base HEMT device and preparation method thereof - Google Patents
A kind of GaN base HEMT device and preparation method thereof Download PDFInfo
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Abstract
This application discloses a kind of GaN base HEMT devices and preparation method thereof, including substrate, buffer layer, channel layer, barrier layer, cap layers, source electrode, grid and drain electrode, since the GaN base HEMT device applies H plasma treatment technique that cap layers are prepared into high-impedance state during the preparation process, to optimize the internal electric field distribution of the GaN base HEMT device, influence of the surface trap to device performance is reduced.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, and in particular to a kind of GaN base HEMT device and preparation method thereof.
Background technique
With the increasingly increase of efficient complete circuit for power conversion and system requirements, with low-power consumption and high speed characteristics
Power device has attracted many concerns recently.Wide bandgap semiconductor gallium nitride GaN material is big with forbidden bandwidth, critical with it to be hit
The features such as electric field is high, electron saturation velocities are high is worn, the ideal material of new generation of semiconductor power device is become.In recent years, with AI
(ln, Ga, Sc) N/GaN is that the GaN base HEMT device of representative can be improved the safety of circuit work.GaN base HEMT device is
Normally on device.In circuit, the power component of normally-off, also referred to as enhancement mode (e mode) transistor is failure safe behaviour
The first choice of work.It realizes enhancement transistor, needs to make grid region completely close transistor when gate voltage is 0V, it is one of
Method is p-type GaN (p-GaN) grid adulterated using Mg, the conduction band in channel is promoted in the state of the equilibrium, to realize enhancing
Type work.
One of major processes of GaN base HEMT device are the F ion note in concave grid groove technology and gate electrode region at present
Enter technique.P-GaN grid HEMT can be divided into two major classes, and one kind is that Schottky contacts are formed in p-GaN layer, and another kind of is p-GaN
Layer is formed with grid injection transistor (Git) of Ohmic contact.And the Ohmic contact in p-GaN layer, it is easy to increase the leakage electricity of grid
Stream.P-GaN grid have big dynamic on resistance at high VDS, and due to extension p-GaN, so that the design of field plate becomes
It is complicated.So forming Schottky contacts with p-GaN layer is p- for the flexible use of field plate is for GaN base HEMT device
It is solved the problems, such as required for GaN HEMT device.
Summary of the invention
The present invention solves the technical problem of the p-GaN layers in GaN base HEMT device to form Schottky contacts.
According in a first aspect, providing a kind of GaN base HEMT device, including substrate, buffer layer, channel in a kind of embodiment
Layer, barrier layer, cap layers, source electrode, grid and drain electrode；
The buffer layer is stacked in the substrate；
The channel layer is stacked on the buffer layer；
The barrier layer is stacked on the channel layer；
The cap layers are stacked on the barrier layer；
The source electrode runs through the cap layers, and the bottom of the source electrode is located on the barrier layer；
The drain electrode runs through the cap layers, and the bottom of the drain electrode is located on the barrier layer；
The grid is located in the cap layers；
The drain electrode, the source electrode and the grid are not in contact mutually.
According to second aspect, a kind of preparation method of GaN base HEMT device is provided in a kind of embodiment, comprising:
It is sequentially prepared buffer layer, channel layer, Two-dimensional electron gas-bearing formation, barrier layer and cap layers on substrate；
Two windows are opened in cap layers, the bottom of the window is located in the barrier layer；
Source metal and drain metal are prepared respectively at described two windows；
The gate metal is prepared in the cap layers；
High-impedance state cap layers are prepared in the cap layers using H plasma treatment technique.
According to a kind of GaN base HEMT device and preparation method thereof of above-described embodiment, due to the gold in preparation HEMT device
After belonging to electrode, p-GaN cap layers are prepared into high-impedance state to reduce current collapse effect using H plasma treatment technique.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of GaN base HEMT device in an embodiment；
Fig. 2 is a kind of preparation technology flow chart of GaN base HEMT device in embodiment；
Fig. 3 (a)~(e) sequentially shows the preparation process flow step of the application GaN base HEMT device, in which:
(a) buffer layer, channel layer, Two-dimensional electron gas-bearing formation, barrier layer and cap layers are sequentially prepared on substrate；
(b) two windows are opened in cap layers, the window bottom of two windows is opened into barrier layer；
(c) source electrode and drain electrode is prepared respectively at two windows；
(d) grid is prepared in cap layers；
(e) high-impedance state cap layers are prepared；
Fig. 4 is the field distribution schematic diagram of GaN base HEMT device in an embodiment.
Specific embodiment
Below by specific embodiment combination attached drawing, invention is further described in detail.Wherein different embodiments
Middle similar component uses associated similar element numbers.In the following embodiments, many datail descriptions be in order to
The application is better understood.However, those skilled in the art can recognize without lifting an eyebrow, part of feature
It is dispensed, or can be substituted by other elements, material, method in varied situations.In some cases, this Shen
Please it is relevant it is some operation there is no in the description show or describe, this is the core in order to avoid the application by mistake
More descriptions are flooded, and to those skilled in the art, these relevant operations, which are described in detail, not to be necessary, they
Relevant operation can be completely understood according to the general technology knowledge of description and this field in specification.
It is formed respectively in addition, feature described in this description, operation or feature can combine in any suitable way
Kind embodiment.Meanwhile each step in method description or movement can also can be aobvious and easy according to those skilled in the art institute
The mode carry out sequence exchange or adjustment seen.Therefore, the various sequences in the description and the appended drawings are intended merely to clearly describe a certain
A embodiment is not meant to be necessary sequence, and wherein some sequentially must comply with unless otherwise indicated.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object,
Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and
It is indirectly connected with (connection).
Schottky knot: schottky junction is the interface of a kind of simple metal and semiconductor, similar to PN junction, is had
Rectification characteristic.
Ohm knot: i.e. Ohmic contact, a kind of interface of simple metal and semiconductor are that abutment does not generate significantly
Additional impedance and it will not make equilibrium carrier concentration inside semiconductor that significant change occur.
MIS knot: the contact structures (Metal-insulator-semiconductor of metal-insulator semiconductor
Junction), contacted between metal and semiconductor by insulator.
HEMTs: high electron mobility transistor.
CMOS: compensated semiconductor's metal-oxide semiconductor (MOS).
GaN: gallium nitride, a kind of wide bandgap semiconductor compound are the representatives of third generation semiconductor, are very suitable to high-power
And the production of microwave device.
PVD: full name Physical Vapor Deposition, physical vapour deposition (PVD) are most common in semiconductor technology
The mode of metal deposit.
LPCVD: full name Low Pressure Chemical Vapor Deposition, low-pressure chemical vapor deposition are
One of the major way that high quality dielectric film deposits in semiconductor technology.
MOCVD: full name Metal-organic Chemical Vapor Deposition, metallo-organic compound chemistry
Gaseous phase deposition, a kind of novel vapour phase epitaxy growing technology to grow up on the basis of vapor phase epitaxial growth (VPE) are main to use
In the growth of the compound semiconductors such as GaN/SiC.
PEVCD: full name Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical
Vapor deposition is one of the major way that high quality dielectric film deposits in semiconductor technology, is mainly used for last part technology sheath
Deposition.
RIE: full name is Reactive Ion Etching, reactive ion etching, a kind of microelectronics dry corrosion process.
ICP: full name Inductively Coupled Plasma, sense coupling are a kind of very heavy
The semiconductor dry etching technology wanted, is mainly used for the etching of GaN material.
GaN is as third generation semiconductor material with wide forbidden band, with forbidden bandwidth is big, critical breakdown electric field is high, saturated electrons
The big feature of drift velocity has apparent advantage in microwave high power and radio frequency applications field.With the development of epitaxy technology,
The technology of preparing and quality of materials gradual perfection of GaN, GaN device are increasingly used in wireless communication, radar, aerospace
And the fields such as intellectual weapon, constantly meet the requirement to high-frequency, high bandwidth, high efficiency, high power device, in semiconductor devices
It is occupied an important position in field.GaN base power device can be used for the preparation of the high-power switchgear device of a new generation, at present predominantly
Lateral hetero-junctions AlGaN/GaN HEMT (high electron mobility transistor) device, AlGaN/GaN knot
Structure electron mobility with higher can be realized low conducting resistance and high working frequency.Based on AlGaN/GaN structure
Transistor is depletion device, however, to ensure that the safety of power electronic system and reliability need enhancement transistor
It introduces, therefore realizes have stable threshold voltage, the enhanced HEMT device of larger conducting electric current particularly significant.
Due to having spontaneous polarization and piezoelectric polarization effect in AlGaN/GaN heterojunction material, can generate highdensity
Two-dimensional electron gas, conducting resistance is low, and output power is high, therefore GaN base integrated circuit has a good application prospect, but also makes
At the shutdown for being difficult to realization device in the state that grid voltage is zero, complementary GaN field-effect crystalline substance is prepared similar to the mode of CMOS
Body pipe circuit unit it is also difficult to achieve, and preparing enhanced AlGaN/GaN HEMT device method at present has: slot grid method, F etc. from
Daughter injection method and p-type gate electrode etc..It using slot grid structure is fairly simple means in device technology, below grid
AlGaN potential barrier etches away a part, and after thickness reaches a certain level, the 2DEG under grid can ignore, and device realizes zero bias
Lower situation turns off effect.But slot grid structure also has disadvantage, generally uses plasma dry etch, there are larger for etch areas
Defect, cause leakage current to rise, influence carrier mobility, while etching depth is difficult to hold, threshold voltage it is uniform
Property is poor.F plasma implantation process is easy to accomplish, and the damage caused by device is small, it can be difficult to preparation has larger positive threshold
The device of threshold voltage, and the F ion stability injected is not good enough, has an impact to the reliability of the high temperature and pressure of device.p-GaN
Gate electrode HEMT device is also the method for realizing high-power enhancement device using grid injection transistor arrangement.Existed using MOCVD
Hetero-junctions surface deposits P-GaN, then forms independent gate structure using sense coupling.P-type grid structure
Have the shortcomings that one it is larger, i.e., due to deposition P-GaN layer need etch form independent grid structure, etching injury will cause
Current collapse effect, after the processing of biggish drain voltage, the dynamic electric resistor of device increases, it is therefore desirable to using suitable side
Method reduces current collapse effect.
In embodiments of the present invention, the preparation method for disclosing a kind of GaN base HEMT device is answered after preparing metal electrode
P-GaN cap layers are prepared into high-impedance state to reduce current collapse effect with H plasma treatment technique.
Embodiment one:
As shown in Figure 1, for a kind of structural schematic diagram of GaN base HEMT device in an embodiment, GaN base disclosed in the present application
HEMT device includes substrate 10, buffer layer 20, channel layer 30, barrier layer 50, cap layers 60, source electrode 80, grid 90 and drain electrode 70.It is slow
Layer 20 is rushed to be stacked on substrate 10,30 layers of channel are stacked on buffer layer 20, and barrier layer 50 is stacked on channel layer 30,
Cap layers 60 are stacked on barrier layer 50, and source electrode 80 runs through cap layers 60, and the bottom of source electrode 80 is located on barrier layer 50, and drain electrode 70 is passed through
Cap layers 60 are worn, 70 bottom of draining is located on barrier layer 50.Grid 90 is located in cap layers 60.Drain electrode 70, source electrode 80 and grid 90
It is not in contact mutually.The GaN base HEMT device further includes Two-dimensional electron gas-bearing formation 40, is formed in connecing for channel layer 30 and barrier layer 50
Contacting surface is biased to 30 side of channel layer.Cap layers 60 include low-resistance cap layers 61 and high resistant cap layers 62, be located at grid 90 and barrier layer 50 it
Between 60 region of cap layers be low-resistance cap layers 61, between grid 90 and barrier layer 50 except 60 region of cap layers be high resistant cap layers
62.Wherein grid 90, source electrode 80 and drain electrode 70 are made of TiN, Ni, Au, W, at least one of metal materials such as Pt or Pd.It is high
It hinders cap layers 62 and is used to passivating material surface, current collapse effect can be significantly inhibited and reduce surface leakage, while high resistant cap layers
62 can be risen and fallen with shielded surfaces potential.
Disclosed herein as well is a kind of process flows of GaN base HEMT device manufacture, as shown in Fig. 2, in an embodiment
The preparation technology flow chart of GaN base HEMT device, comprising:
Step 1 is sequentially prepared buffer layer, channel layer, Two-dimensional electron gas-bearing formation, barrier layer and cap layers on substrate.
It is sequentially prepared buffer layer, channel layer, Two-dimensional electron gas-bearing formation, barrier layer and cap layers as shown in Fig. 3 (a), on substrate, has
Body is after cleaning to 6 inches of substrate 100Si wafer, successively to deposit buffer layer 200, channel layer using MOCVD technique
300, Two-dimensional electron gas-bearing formation 400, barrier layer 500 and cap layers 600.Wherein, buffer layer 200 is the GaN of the C of 4.8 μm of doping；Channel
Layer 300 is undoped GaN, with a thickness of 150nm；Barrier layer 500 is undoped AlGaN, with a thickness of 18nm；Cap layers 600 are
Adulterating Mg concentration is 2~3 × 1019cm-3GaN, with a thickness of 70nm.Then quality examination, mark and clear are carried out to the device
It washes.
Step 2, opens two windows in cap layers, and the bottom of each window is located in barrier layer.
As shown in Fig. 3 (b), two windows are opened in cap layers, the window bottom of two windows is opened into barrier layer, specifically utilized
ICP technique etches two windows in cap layers 600, and bottom of window is opened to barrier layer 500, for source electrode and the leakage of the device to be arranged
Pole.I.e. in 500 a part of position removal cap layers 600 and barrier layer of device setting source electrode and drain electrode.
Step 3 prepares source metal and drain metal at two windows respectively.
As shown in Fig. 3 (c), prepares source electrode and drain electrode respectively at two windows, specifically utilize the side of electron beam evaporation
Method prepares source electrode 800 and drain electrode 700.Anneal 30s under 850 DEG C of condition of nitrogen gas, to form ohm of source electrode 800 and drain electrode 700
Contact.Source electrode 800 and drain electrode 700 are using at least one of metal materials such as Ti, Al, Ni and Au.
Step 4 prepares gate metal in cap layers.
As shown in Fig. 3 (d), grid is prepared in cap layers, is specifically made in cap layers 600 using the method for electron beam evaporation
Standby grid 900.Grid 900 is using at least one of metal materials such as Ni and Au.
Step 5 prepares high-impedance state cap layers using H plasma treatment technique.
As shown in Fig. 3 (e), high-impedance state cap layers are prepared, specifically using self aligned H plasma treatment technique in cap layers
The cap layers 602 of high-impedance state are prepared on 600.Because of process flow, the cap layers 600 under grid 900 are not prepared to high-impedance state, with
The low-resistance cap layers 601 under grid 900 are formed, the cap layers 600 of other positions are prepared to high-impedance state and form high resistant cap layers 602.It adopts
The preparation facilities of H plasma is Oxford Plasmalab System100ICP 180, and the power that the equipment is arranged is
300W, lower pressure 8mTorr.Because radio-frequency power influences the depth of H plasma injection, therefore it is 2W that radio-frequency power, which is arranged,
Cap layers can be passivated, and reduce influence of the H plasma to Two-dimensional electron gas channel.Finally by HEMT device in 350 DEG C of conditions
It is damaged caused by plasma to repair within lower annealing 5 minutes.
As shown in figure 4, for the field distribution schematic diagram of GaN base HEMT device in an embodiment, channel layer 300 (i-GaN)
There is negative polarization charge with the interface (AlGaN) of barrier layer 500, can be improved the internal longitudinal electric field of barrier layer 500 (AlGaN),
Reduce the transverse electric field for being gathered in 900 edge of grid.The introducing of low-resistance cap layers 601 makes HEMT device guarantee lower electric conduction
While resistance, biggish breakdown voltage, the current collapse phenomenon of suppression device, to further decrease the quiet of HEMT device are obtained
State power consumption promotes the performance of device entirety.
In conclusion using the GaN base HEMT device of H plasma preparation compared with traditional p-type GaN gated device,
On the one hand can be generally existing with the current P-type grid electrode HEMT device of effective solution surface etch damage problem, H atom can be blunt
Change the shallow acceptor impurities in Si or GaN material, the material after passivation is converted into high-impedance state, can pass through in a low voltage state
Change ICP power and adjust energy of plasma and density, generates Mg- in H plasma injection P-GaN in process treatment process
H compound.On the other hand it, which exports electric current, obvious rising, this is because traditional p-type gate electrode technology is using Cl2/BCl3
The cap layers of 10nm or so (GaN) can be reserved in order to reduce surface damage in etching process, so that two-dimensional electron gas declines.Mesh
Preceding transverse direction HEMT device is influenced by peak electric field near gate edge leakage side and current collapse, which utilizes cap layers (GaN)
Optimize internal electric field distribution, reduces influence of the surface trap to device performance.
Use above specific case is illustrated the present invention, is merely used to help understand the present invention, not to limit
The system present invention.For those skilled in the art, according to the thought of the present invention, can also make several simple
It deduces, deform or replaces.
Claims (10)
1. a kind of GaN base HEMT device, which is characterized in that including substrate, buffer layer, channel layer, barrier layer, cap layers, source electrode, grid
Pole and drain electrode；
The buffer layer is stacked in the substrate；
The channel layer is stacked on the buffer layer；
The barrier layer is stacked on the channel layer；
The cap layers are stacked on the barrier layer；
The source electrode runs through the cap layers, and the bottom of the source electrode is located on the barrier layer；
The drain electrode runs through the cap layers, and the bottom of the drain electrode is located on the barrier layer；
The grid is located in the cap layers；
The drain electrode, the source electrode and the grid are not in contact mutually.
2. HEMT device as described in claim 1, which is characterized in that further include Two-dimensional electron gas-bearing formation, be formed in the channel
The contact surface of layer and the barrier layer is biased to the channel layer side.
3. HEMT device as described in claim 1, which is characterized in that the cap layers include low-resistance cap layers, low-resistance cap layers position
Between the grid and the barrier layer.
4. HEMT device as described in claim 1, which is characterized in that the grid, source electrode and drain electrode are by TiN, Ni, Au, W, Pt
Or at least one of materials such as Pd are constituted.
5. a kind of preparation method of GaN base HEMT device characterized by comprising
It is sequentially prepared buffer layer, channel layer, Two-dimensional electron gas-bearing formation, barrier layer and cap layers on substrate；
Two windows are opened in cap layers, the bottom of the window is located in the barrier layer；
Source metal and drain metal are prepared respectively at described two windows；
The gate metal is prepared in the cap layers；
High-impedance state cap layers are prepared in the cap layers using H plasma treatment technique.
6. method as claimed in claim 5, which is characterized in that prepared respectively at the first window and second window
Source metal and drain metal include:
The Ohmic contact of the source metal and the drain metal is formed under conditions of annealing 30s under 850 DEG C of condition of nitrogen gas.
7. method as claimed in claim 5, which is characterized in that the application H plasma treatment technique prepares high-impedance state cap
Layer include:
The radio-frequency power that the H plasma is arranged is 2W.
8. method as claimed in claim 5, which is characterized in that the buffer layer is the GaN of the C of 4.8 μm of doping；
The channel layer is undoped GaN；
The barrier layer is undoped AlGaN.
9. method as claimed in claim 5, which is characterized in that the cap layers are that doping Mg concentration is 2~3 × 1019cm-3's
GaN。
10. method as claimed in claim 5, which is characterized in that the channel layer with a thickness of 150nm；The barrier layer
With a thickness of 18nm；The cap layers with a thickness of 70nm.
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| CN112992895A (en) * | 2021-01-27 | 2021-06-18 | 复旦大学 | Preparation method of GaN-based switch integrated unit and GaN-based switch tube wafer structure |
| CN113439340A (en) * | 2021-05-03 | 2021-09-24 | 英诺赛科(苏州)科技有限公司 | Nitrogen-based semiconductor device and method for manufacturing the same |
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| CN117690793A (en) * | 2024-02-02 | 2024-03-12 | 深圳天狼芯半导体有限公司 | Structure, chip and electronic equipment of withstand voltage gallium nitride power device |
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Application publication date: 20190510 |