CN107238891A - A kind of unformed silicon waveguiding structure that can be integrated and preparation method thereof - Google Patents
A kind of unformed silicon waveguiding structure that can be integrated and preparation method thereof Download PDFInfo
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- CN107238891A CN107238891A CN201710372174.4A CN201710372174A CN107238891A CN 107238891 A CN107238891 A CN 107238891A CN 201710372174 A CN201710372174 A CN 201710372174A CN 107238891 A CN107238891 A CN 107238891A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
Abstract
The present invention is applied to photoelectric field there is provided a kind of unformed silicon waveguiding structure that can be integrated and preparation method thereof, and the structure includes：Single crystal semiconductor, the first silicon dioxide layer, unformed silicon layer and the second silicon dioxide layer；First silicon dioxide layer is formed on single crystal semiconductor by deposition, and unformed silicon layer is formed in the first silicon dioxide layer by deposition.The unformed silicon waveguiding structure that the present invention is provided can be by controlling the first silicon dioxide layer and unformed silicon layer thickness, adjust unformed silicon waveguide and play waveguide or the effect of waveguide top covering, and pass through photoetching process or self calibration technique, the proper calibration unformed silicon waveguide of difference or unformed silicon waveguide are coupled with the horizontal direction between other waveguides, to reduce technology difficulty.
Description
Technical field
The invention belongs to photoelectric field, more particularly to a kind of unformed silicon waveguiding structure that can be integrated and preparation method thereof.
Background technology
With the continuous improvement of integrated circuit electronic device clock frequency and being substantially increased for integration density, traditional electricity is used
Integrated solution encounters excessive energy consumption and the problem of bandwidth is limited on the chip chamber and chip of son connection.~
Under 130nm technical conditions, the microprocessor power consumption of general half is all lost in electronic circuit connection.Moreover, in IC systems
In, connect difference in functionality part and transmit clock frequency of the clock frequency well below each electronic device of the bus of signal.
In this case, electronic circuit rather than individual devices connect into limit the bottleneck of system speed.
In order to solve the problem of electronic circuit is connected, optics connection is considered as a kind of very promising replacement electronics connection
The scheme of (such as copper cash).In long haul communication field, optical fiber has been widely used about 30 years.For chip chamber and core
Integrated on piece, optical interconnection was proposed first in 1984, but until did not currently also propose concrete implementation chip chamber and core
Integrated scheme on piece.
The silicon waveguide that current relatively common use SOI (silicon in Silicon-On-Insulator, dielectric substrate) makes,
But the III-V that generally uses of SOI the silicon waveguide and the photoelectric device that make is integrated needs to use bonding technology, and key
Conjunction technology needs strict planarization and smooth surface again, but iii v compound semiconductor substrate and silicon substrate size are not
Together, application of the bonding techniques in large-scale industrial production is limited.More seriously, in many cases, using bonding skill
The waveguide of art alignment different materials needs very harsh technique of alignment, more limits its industrial applications.
The content of the invention
The purpose of the embodiment of the present invention is to provide a kind of unformed silicon waveguiding structure that can be integrated, it is intended to solve existing adopt
The problem of technology and industrialization problem for being brought with bonding techniques and expensive SOI substrate.
The embodiment of the present invention is achieved in that a kind of unformed silicon waveguiding structure that can be integrated, and the structure includes：
Single crystal semiconductor, the first silicon dioxide layer, unformed silicon layer and the second silicon dioxide layer；
First silicon dioxide layer is formed on the single crystal semiconductor by deposition, and it is heavy that the unformed silicon layer passes through
Product is formed in first silicon dioxide layer, and second silicon dioxide layer is formed at the unformed silicon layer by deposition
On.
Further, if light field center intensity is located in the single crystal semiconductor, the unformed silicon layer thickness is less than
200nm；
If light field center intensity is located in the unformed silicon layer, the unformed silicon layer thickness is more than or equal to
200nm。
Further, the thickness of first silicon dioxide layer is less than 50 nanometers, and the thickness of the unformed silicon layer is big
In 50 nanometers, the thickness of second silicon dioxide layer is more than 100 nanometers.
Further, between the unformed silicon layer and second silicon dioxide layer, in addition to：
Silicon nitride layer, the silicon nitride layer is formed on the unformed silicon layer by deposition, second silica
Layer is formed on the silicon nitride layer by deposition.
Further, the thickness of the silicon nitride layer is less than 10 nanometers.
The another object of the embodiment of the present invention is that there is provided a kind of making side of unformed silicon waveguiding structure that can be integrated
Method, methods described comprises the steps：
Prepare single crystal semiconductor；
On the single crystal semiconductor the first silicon dioxide layer is formed by depositing；
Unformed silicon layer is formed by deposition in first silicon dioxide layer；
In the unformed silicon layer the second silicon dioxide layer is formed by depositing.
Further, the first silicon dioxide layer deposition passes through low speed chemical vapor deposition in the single crystal semiconductor
On, deposition velocity is less than 2 nm/secs.
Further, the unformed silicon-containing layer deposition by high temeperature chemistry gas deposition in the first silicon dioxide layer,
Depositing temperature is more than 250 degrees Celsius.
Further, after the unformed silicon layer formation, before the second silicon dioxide layer formation, the side
Method also comprises the steps：
Pass through high temeperature chemistry gas deposition formation silicon nitride layer on the unformed silicon layer；
In the silicon nitride layer the second silicon dioxide layer is formed by depositing.
Further, the silicon nitride layer by high temeperature chemistry gas deposition on the unformed silicon layer.
Unformed silicon waveguiding structure provided in an embodiment of the present invention can form integrated phototube by micro fabrication
Part, the unformed silicon waveguiding structure has following beneficial effects：
First, by controlling the first silicon dioxide layer and unformed silicon layer thickness, adjusting unformed silicon waveguide and playing waveguide
Or the effect of waveguide top covering；
Second, using photoetching process or self calibration technique, the proper calibration unformed silicon waveguide of difference or unformed silicon
Horizontal direction between waveguide and other waveguides is coupled, and reduces technology difficulty；
Third, realizing laser device, photodetector and optical modulator can simultaneously be made in same epitaxial growth technology
It is standby, optimised devices coupling technique.
Brief description of the drawings
Fig. 1 is the profile of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention；
Fig. 2 is the preferred profile figure of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention；
Fig. 3 is the flowage structure of the preparation method of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention
Figure；
Fig. 4 is the preferred flow knot of the preparation method of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention
Composition.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
Unformed silicon waveguiding structure provided in an embodiment of the present invention can form integrated phototube by micro fabrication
Part, can be adjusted unformed silicon waveguide and plays waveguide or ripple by controlling the first silicon dioxide layer and unformed silicon layer thickness
Top covering effect is led, and by photoetching process or self calibration technique, the level between the different unformed silicon waveguides of proper calibration
Direction is coupled, to reduce technology difficulty.
Fig. 1 shows the cross-section structure of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention, in order to just
In explanation, part related to the present invention illustrate only.
As one embodiment of the invention, the unformed silicon waveguiding structure that this can be integrated can be for making integration laser
Part, including：
Single crystal semiconductor 1, the first silicon dioxide layer 2, the silicon dioxide layer 4 of unformed silicon layer 3 and second；
First silicon dioxide layer 2 is formed on single crystal semiconductor 1 by deposition, and unformed silicon layer 3 is formed at by deposition
In first silicon dioxide layer 2, the second silicon dioxide layer 4 is formed on unformed silicon layer 3 by deposition；
In embodiments of the present invention, formed in the GaAs base semiconductor lasers structure 1 without top covering by depositing
First silicon dioxide layer 2, deposition velocity is less than 2 nm/secs；Unformed silicon is formed by deposition in the first silicon dioxide layer 2
Layer 3, depositing temperature is more than 250 degrees Celsius；Deposition forms the second silicon dioxide layer 4, depositing temperature 300 on unformed silicon layer 3
Degree Celsius.
Preferably, the thickness of the first silicon dioxide layer 2 is less than 50 nanometers, especially at 10 nanometers with especially excellent effect
Really.
Preferably, the thickness of unformed silicon layer 3 is more than 50 nanometers, especially at 100 nanometers with especially excellent effect.
Preferably, the thickness of the second silicon dioxide layer 4 is more than 100 nanometers, especially at 500 nanometers with especially excellent
Effect.
In embodiments of the present invention, the first silicon dioxide layer 2 is the buffer layer of waveguide, can relax single crystal semiconductor
Stress between 1 and unformed silicon layer 3.The thickness of first silicon dioxide layer 2 is less than 50 nanometers, by adjusting the first silicon dioxide layer
2 thickness, adjust light field and the stiffness of coupling of single crystal semiconductor 1 in this waveguide.Because silica refractive index is partly led less than monocrystalline
Body refractive index, so the thickness of the first silicon dioxide layer 2 is thicker, light field coupling is poorer.
The deposition velocity of first silicon dioxide layer 2 is less than 2 nm/secs, it is therefore an objective to so that the first silicon dioxide layer 2 improves material
Consistency, preferably buffers stress.Unformed silicon layer 3 is deposited in the first silicon dioxide layer 2, and it is Celsius that depositing temperature is more than 250
Degree purpose is the absorptivity for reducing light in unformed silicon layer 3.
As a preferred embodiment of the present invention, if light field center intensity is located in the single crystal semiconductor, the nothing is determined
Type silicon layer thickness is less than 200nm；If light field center intensity is located in the unformed silicon layer, the unformed silicon layer thickness is big
In or equal to 200nm.
In embodiments of the present invention, if light field center intensity is located in single crystal semiconductor 1, due to unformed silicon refractive index
More than or equal to single crystal semiconductor refractive index, unformed silicon layer 3 plays a part of the top covering of waveguide, to allow light more
In the active area for concentrating on the device in single crystal semiconductor 1 more, the unformed thickness of silicon layer 3 should be less than 200nm；If light field
Center intensity is located in unformed silicon layer 3, and unformed silicon layer 3 is the sandwich layer of waveguide, to cause light is more concentrated on unformed
In silicon layer 3, the unformed thickness of silicon layer 3 should be greater than or equal to 200nm.
The effect of second silicon dioxide layer 4 is the top covering of waveguide, is played a part of light limitation in the semiconductors, the two or two
The thickness of silicon oxide layer 4 is more than 100 nanometers.
Unformed silicon waveguiding structure provided in an embodiment of the present invention can form integrated phototube by micro fabrication
Part, the unformed silicon waveguiding structure has following beneficial effects：
First, by controlling the first silicon dioxide layer and unformed silicon layer thickness, adjusting unformed silicon waveguide and playing waveguide
Or the effect of waveguide top covering；
Second, using photoetching process or self calibration technique, the proper calibration unformed silicon waveguide of difference or unformed silicon
Horizontal direction between waveguide and other waveguides is coupled, and reduces technology difficulty；
Third, realizing laser device, photodetector and optical modulator can simultaneously be made in same epitaxial growth technology
It is standby, optimised devices coupling technique.
Fig. 2 shows the preferred profile structure of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention, is
It is easy to explanation, illustrate only part related to the present invention.
As one embodiment of the invention, the unformed silicon waveguiding structure that this can be integrated includes single crystal semiconductor 1, the first dioxy
SiClx layer 2, the silicon dioxide layer 4 of unformed silicon layer 3 and second, can be between the unformed silicon dioxide layer 4 of silicon layer 3 and second
Including：
Silicon nitride layer 5, silicon nitride layer 5 is formed on unformed silicon layer 3 by deposition, and it is heavy that the second silicon dioxide layer 4 passes through
Product is formed on silicon nitride layer 5.
Preferably, the thickness of silicon nitride layer 5 is less than 10 nanometers.
In embodiments of the present invention, silicon nitride layer 5 plays a part of the unformed silicon layer 3 of protection, it is therefore an objective to reduce light in nothing
The absorptivity of sizing silicon layer 3.
Based on the structure, the thickness of the first silicon dioxide layer 2 is preferably 30 nanometers, and the thickness of unformed silicon layer 3 is preferably
300 nanometers, the thickness of silicon nitride layer 5 is preferably 5 nanometers, and the thickness of the second silicon dioxide layer 4 is preferably 500 nanometers.
In embodiments of the present invention, formed in the GaAs base semiconductor lasers structure 1 without top covering by depositing
First silicon dioxide layer 2, the nm/sec of deposition velocity 0.5,30 nanometers of deposit thickness；Pass through deposition in the first silicon dioxide layer 2
Form unformed silicon layer 3,350 degrees Celsius of depositing temperature, 300 nanometers of deposit thickness；Deposition forms nitridation on unformed silicon layer 3
Silicon layer 5,5 nanometers of deposit thickness；The second silicon dioxide layer 4 is formed by depositing on silicon nitride layer 5, depositing temperature 350 is Celsius
Degree.
In embodiments of the present invention, the first silicon dioxide layer 2 is the buffer layer of waveguide, can relax single crystal semiconductor
Stress between 1 and unformed silicon layer 3, by adjusting the thickness of the first silicon dioxide layer 2, can adjust light field and list in this waveguide
The stiffness of coupling of brilliant semiconductor 1.Because silica refractive index is less than single crystal semiconductor refractive index, so the first silicon dioxide layer
2 thickness are thicker, and light field coupling is poorer.Light is limited work in the semiconductors by the second silicon dioxide layer 4 as the top covering of waveguide
With silicon nitride layer 5 protects unformed silicon layer 3, absorptivity of the reduction light in unformed silicon layer 3.
Unformed silicon waveguiding structure provided in an embodiment of the present invention can form integrated phototube by micro fabrication
Part, the unformed silicon waveguiding structure has following beneficial effects：
First, by controlling the first silicon dioxide layer and unformed silicon layer thickness, adjusting unformed silicon waveguide and playing waveguide
Or the effect of waveguide top covering；
Second, using photoetching process or self calibration technique, the proper calibration unformed silicon waveguide of difference or unformed silicon
Horizontal direction between waveguide and other waveguides is coupled, and reduces technology difficulty；
Third, realizing laser device, photodetector and optical modulator can simultaneously be made in same epitaxial growth technology
It is standby, optimised devices coupling technique.
Fig. 3 shows the flow knot of the preparation method of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention
Structure, for convenience of description, illustrate only part related to the present invention.
As one embodiment of the invention, the preparation method for the unformed silicon waveguiding structure that this can be integrated comprises the steps：
In step S101, single crystal semiconductor is prepared；
In step s 102, the first silicon dioxide layer is formed by depositing on single crystal semiconductor；
In step s 103, unformed silicon layer is formed by deposition in the first silicon dioxide layer；
In step S104, the second silicon dioxide layer is formed by depositing in unformed silicon layer.
Preferably, the first silicon dioxide layer deposition by low speed chemical vapor deposition on single crystal semiconductor, deposition velocity
Less than 2 nm/secs, deposition velocity is particularly preferably 1 nm/sec.
Preferably, unformed silicon-containing layer deposition by high temeperature chemistry gas deposition in the first silicon dioxide layer, depositing temperature
More than 250 degrees Celsius.
In embodiments of the present invention, formed in the GaAs base semiconductor lasers structure 1 without top covering by depositing
First silicon dioxide layer 2 of 10 nanometer thickness, the nm/sec of deposition velocity 1；Nothing is formed by deposition in the first silicon dioxide layer 2
Sizing silicon layer 3,300 degrees Celsius of depositing temperature, 100 nanometers of deposit thickness；Deposition forms the second titanium dioxide on unformed silicon layer 3
Silicon layer 4,300 degrees Celsius of depositing temperature.
In embodiments of the present invention, deposition process can use but be not limited to plasma enhanced chemical vapor deposition reality
It is existing.
Preferably, the thickness of the first silicon dioxide layer 2 is less than 50 nanometers, especially at 10 nanometers with especially excellent effect
Really.
Preferably, the thickness of unformed silicon layer 3 is more than 50 nanometers, especially at 100 nanometers with especially excellent effect.
Preferably, the thickness of the second silicon dioxide layer 4 is more than 100 nanometers, especially at 500 nanometers with especially excellent
Effect.
In embodiments of the present invention, the first silicon dioxide layer 2 is the buffer layer of waveguide, can relax single crystal semiconductor
Stress between 1 and unformed silicon layer 3.The thickness of first silicon dioxide layer 2 is less than 50 nanometers, by adjusting the first silicon dioxide layer
2 thickness, adjust light field and the stiffness of coupling of single crystal semiconductor 1 in this waveguide.Because silica refractive index is partly led less than monocrystalline
Body refractive index, so the thickness of the first silicon dioxide layer 2 is thicker, light field coupling is poorer.
The deposition velocity of first silicon dioxide layer 2 is less than 2 nm/secs, it is therefore an objective to so that the first silicon dioxide layer 2 improves material
Consistency, preferably buffers stress.Unformed silicon layer 3 is deposited in the first silicon dioxide layer 2, and it is Celsius that depositing temperature is more than 250
Degree purpose is the absorptivity for reducing light in unformed silicon layer 3.
As a preferred embodiment of the present invention, if light field center intensity is located in the single crystal semiconductor, the nothing is determined
Type silicon layer thickness is less than 200nm；If light field center intensity is located in the unformed silicon layer, the unformed silicon layer thickness is big
In or equal to 200nm.
In embodiments of the present invention, if light field center intensity is located in single crystal semiconductor 1, due to unformed silicon refractive index
More than or equal to single crystal semiconductor refractive index, unformed silicon layer 3 plays a part of the top covering of waveguide, to allow light more
In the active area for concentrating on the device in single crystal semiconductor 1 more, the unformed thickness of silicon layer 3 should be less than 200nm；If light field
Center intensity is located in unformed silicon layer 3, and unformed silicon layer 3 is the sandwich layer of waveguide, to cause light is more concentrated on unformed
In silicon layer 3, the unformed thickness of silicon layer 3 should be greater than or equal to 200nm.
The effect of second silicon dioxide layer 4 is the top covering of waveguide, is played a part of light limitation in the semiconductors, the two or two
The thickness of silicon oxide layer 4 is more than 100 nanometers.
Unformed silicon waveguiding structure provided in an embodiment of the present invention can form integrated phototube by micro fabrication
Part, the unformed silicon waveguiding structure has following beneficial effects：
First, by controlling the first silicon dioxide layer and unformed silicon layer thickness, adjusting unformed silicon waveguide and playing waveguide
Or the effect of waveguide top covering；
Second, using photoetching process or self calibration technique, the proper calibration unformed silicon waveguide of difference or unformed silicon
Horizontal direction between waveguide and other waveguides is coupled, and reduces technology difficulty；
Third, realizing laser device, photodetector and optical modulator can simultaneously be made in same epitaxial growth technology
It is standby, optimised devices coupling technique.
Fig. 4 shows the preferred stream of the preparation method of unformed silicon waveguiding structure that can be integrated provided in an embodiment of the present invention
Journey structure, for convenience of description, illustrate only part related to the present invention.
In step s 201, single crystal semiconductor is prepared；
In step S202, the first silicon dioxide layer is formed by depositing on single crystal semiconductor；
In step S203, unformed silicon layer is formed by deposition in the first silicon dioxide layer；
In step S204, pass through high temeperature chemistry gas deposition formation silicon nitride layer on unformed silicon layer；
In step S205, the second silicon dioxide layer is formed by depositing in silicon nitride layer.
Preferably, silicon nitride layer is by high temeperature chemistry gas deposition on unformed silicon layer, and the thickness of silicon nitride layer 5 is less than
10 nanometers.
In embodiments of the present invention, silicon nitride layer 5 plays a part of the unformed silicon layer 3 of protection, it is therefore an objective to reduce light in nothing
The absorptivity of sizing silicon layer 3.
Based on the structure, the thickness of the first silicon dioxide layer 2 is preferably 30 nanometers, and the thickness of unformed silicon layer 3 is preferably
300 nanometers, the thickness of silicon nitride layer 5 is preferably 5 nanometers, and the thickness of the second silicon dioxide layer 4 is preferably 500 nanometers.
In embodiments of the present invention, formed in the GaAs base semiconductor lasers structure 1 without top covering by depositing
First silicon dioxide layer 2, the nm/sec of deposition velocity 0.5,30 nanometers of deposit thickness；Pass through deposition in the first silicon dioxide layer 2
Form unformed silicon layer 3,350 degrees Celsius of depositing temperature, 300 nanometers of deposit thickness；Deposition forms nitridation on unformed silicon layer 3
Silicon layer 5,5 nanometers of deposit thickness；The second silicon dioxide layer 4 is formed by depositing on silicon nitride layer 5, depositing temperature 350 is Celsius
Degree.
In embodiments of the present invention, the first silicon dioxide layer 2 is the buffer layer of waveguide, can relax single crystal semiconductor
Stress between 1 and unformed silicon layer 3, by adjusting the thickness of the first silicon dioxide layer 2, can adjust light field and list in this waveguide
The stiffness of coupling of brilliant semiconductor 1.Because silica refractive index is less than single crystal semiconductor refractive index, so the first silicon dioxide layer
2 thickness are thicker, and light field coupling is poorer.Light is limited work in the semiconductors by the second silicon dioxide layer 4 as the top covering of waveguide
With silicon nitride layer 5 protects unformed silicon layer 3, absorptivity of the reduction light in unformed silicon layer 3.
Unformed silicon waveguiding structure provided in an embodiment of the present invention can form integrated phototube by micro fabrication
Part, the unformed silicon waveguiding structure has following beneficial effects：
First, by controlling the first silicon dioxide layer and unformed silicon layer thickness, adjusting unformed silicon waveguide and playing waveguide
Or the effect of waveguide top covering；
Second, using photoetching process or self calibration technique, the proper calibration unformed silicon waveguide of difference or unformed silicon
Horizontal direction between waveguide and other waveguides is coupled, and reduces technology difficulty；
Third, realizing laser device, photodetector and optical modulator can simultaneously be made in same epitaxial growth technology
It is standby, optimised devices coupling technique.
These are only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Any modifications, equivalent substitutions and improvements made within principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of unformed silicon waveguiding structure that can be integrated, it is characterised in that the structure includes：
Single crystal semiconductor, the first silicon dioxide layer, unformed silicon layer and the second silicon dioxide layer；
First silicon dioxide layer is formed on the single crystal semiconductor by deposition, and the unformed silicon layer is by depositing shape
Described in Cheng Yu in the first silicon dioxide layer, second silicon dioxide layer is formed on the unformed silicon layer by deposition.
2. structure as claimed in claim 1, it is characterised in that if light field center intensity is located in the single crystal semiconductor,
The unformed silicon layer thickness is less than 200nm；
If light field center intensity is located in the unformed silicon layer, the unformed silicon layer thickness is more than or equal to 200nm.
3. structure as claimed in claim 1, it is characterised in that the thickness of first silicon dioxide layer is less than 50 nanometers, institute
The thickness for stating unformed silicon layer is more than 50 nanometers, and the thickness of second silicon dioxide layer is more than 100 nanometers.
4. structure as claimed in claim 1, it is characterised in that the unformed silicon layer and second silicon dioxide layer it
Between, in addition to：
Silicon nitride layer, the silicon nitride layer is formed on the unformed silicon layer by deposition, and second silicon dioxide layer is led to
Deposition is crossed to be formed on the silicon nitride layer.
5. structure as claimed in claim 4, it is characterised in that the thickness of the silicon nitride layer is less than 10 nanometers.
6. a kind of preparation method of unformed silicon waveguiding structure that can be integrated, it is characterised in that methods described comprises the steps：
Prepare single crystal semiconductor；
On the single crystal semiconductor the first silicon dioxide layer is formed by depositing；
Unformed silicon layer is formed by deposition in first silicon dioxide layer；
In the unformed silicon layer the second silicon dioxide layer is formed by depositing.
7. method as claimed in claim 6, it is characterised in that the first silicon dioxide layer deposition passes through low speed chemical vapor
It is deposited on the single crystal semiconductor, deposition velocity is less than 2 nm/secs.
8. method as claimed in claim 6, it is characterised in that the unformed silicon-containing layer deposition passes through high temeperature chemistry gas deposition
In in the first silicon dioxide layer, depositing temperature is more than 250 degrees Celsius.
9. method as claimed in claim 6, it is characterised in that after the unformed silicon layer formation, second dioxy
Before SiClx layer is formed, methods described also comprises the steps：
Pass through high temeperature chemistry gas deposition formation silicon nitride layer on the unformed silicon layer；
In the silicon nitride layer the second silicon dioxide layer is formed by depositing.
10. method as claimed in claim 6, it is characterised in that the silicon nitride layer is by high temeperature chemistry gas deposition in institute
State on unformed silicon layer.
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| CN110703382A (en) * | 2019-01-10 | 2020-01-17 | 济南晶正电子科技有限公司 | High-integration-level lithium niobate/silicon nitride optical waveguide integrated structure and preparation method thereof |
| CN110931628A (en) * | 2019-11-14 | 2020-03-27 | 天津大学 | Superconducting nanowire single-photon detector working in dual-band |
| CN111697308A (en) * | 2020-06-24 | 2020-09-22 | 中国电子科技集团公司第四十一研究所 | Rectangular waveguide tube core manufacturing method based on SOI deep silicon etching and waveguide assembly |
| CN112331556A (en) * | 2020-11-02 | 2021-02-05 | 上海华虹宏力半导体制造有限公司 | Amorphous silicon thin film forming method |
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| CN101910899A (en) * | 2007-11-30 | 2010-12-08 | 3M创新有限公司 | Be used to prepare the method for optical waveguides |
| US20110042672A1 (en) * | 2009-08-20 | 2011-02-24 | Oki Electric Industry Co., Ltd. | Coplanar waveguide having amorphous silicon layer between substrate and insulated layer and a manufacturing method thereof |
| US20130243383A1 (en) * | 2012-02-10 | 2013-09-19 | Politecnico Di Milano | Athermal Photonic Waveguide With Refractive Index Tuning |
| CN102944911A (en) * | 2012-11-21 | 2013-02-27 | 清华大学 | Optical waveguide and manufacture methods thereof |
| CN104460054A (en) * | 2013-11-25 | 2015-03-25 | 苏州矩阵光电有限公司 | Lithium niobate photomodulator and manufacturing and packaging method thereof |
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| CN110703382A (en) * | 2019-01-10 | 2020-01-17 | 济南晶正电子科技有限公司 | High-integration-level lithium niobate/silicon nitride optical waveguide integrated structure and preparation method thereof |
| CN110931628A (en) * | 2019-11-14 | 2020-03-27 | 天津大学 | Superconducting nanowire single-photon detector working in dual-band |
| CN111697308A (en) * | 2020-06-24 | 2020-09-22 | 中国电子科技集团公司第四十一研究所 | Rectangular waveguide tube core manufacturing method based on SOI deep silicon etching and waveguide assembly |
| CN112331556A (en) * | 2020-11-02 | 2021-02-05 | 上海华虹宏力半导体制造有限公司 | Amorphous silicon thin film forming method |
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