CN107227439A - Tft液晶基板金属边框局部镀膜工艺 - Google Patents

Tft液晶基板金属边框局部镀膜工艺 Download PDF

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CN107227439A
CN107227439A CN201710657166.4A CN201710657166A CN107227439A CN 107227439 A CN107227439 A CN 107227439A CN 201710657166 A CN201710657166 A CN 201710657166A CN 107227439 A CN107227439 A CN 107227439A
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edge frame
tft
metal edge
shutter
metal
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李章辉
潘明明
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Chongqing Yongxin Technology Co Ltd
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Chongqing Yongxin Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明揭示了一种TFT液晶基板金属边框局部镀膜工艺：1)在TFT基板的镀膜面镀制ITO膜；2)将遮挡板覆盖在TFT基板的镀膜面，所述遮挡板上预留有镂空的镀膜间隙，所述镀膜间隙位置与TFT基板上镀至金属边框位置相同；3)在遮挡板上镀至金属膜，金属膜透过镀膜间隙沉积在ITO膜上的金属层构成金属边框；4)取下遮挡板。本发明通过改进工艺在基板边缘镀制金属边框，与现有单纯的ITO导电膜相比，产品在保证原有的高透过率及低反射率的情况下，屏幕触控反应速度及触控稳定性明显提升，并且产品设计方案已投入到实际生产中并量产，根据客户段反馈的结果，该产品性能优良。

Description

TFT液晶基板金属边框局部镀膜工艺
技术领域
本发明涉及TFT超薄液晶基板镀膜工艺。
背景技术
近年来，中国电子信息产业取得了长足的发展，已成为中国工业部门的第一大产业，是拉动中国经济增长的最主要的支柱之一；与此同时，液晶行业取得了突破性进展；但随着社会日益剧增的需求，需要不断创新在保证高品质、低成本提高其TFT液晶屏的反应速度及极端环境下的稳定性；因金属膜的导电反应速度比常规ITO膜的反应速度快，膜层信赖性稳定，在极端环境不使用不受外界环境干扰等特点，因此需要开发新的工艺提升产品的核心竞争力。
发明内容
本发明所要解决的技术问题是实现一种在保证原有ITO产品的高透过率，低反射率的同时提高产品的感知反应速度及极端环境下的稳定性，改良TFT基板表面镀膜设计和对生产过程中的工艺管控，来实现屏幕性能的提升。
为了实现上述目的，本发明采用的技术方案为：TFT液晶基板金属边框局部镀膜工艺：
1)在TFT基板的镀膜面镀制ITO膜；
2)将遮挡板覆盖在TFT基板的镀膜面，所述遮挡板上预留有镂空的镀膜间隙，所述镀膜间隙位置与TFT基板上镀至金属边框位置相同；
3)在遮挡板上镀至金属膜，金属膜透过镀膜间隙沉积在ITO膜上的金属层构成金属边框；
4)取下遮挡板。
所述1)中，TFT基板的镀膜面整面镀制有一层ITO膜，所述ITO膜的透过率≥93％以上，反射率≤0.5％以内。
所述2)中遮挡板覆盖在TFT基板上时，mask与基板贴合对位时使用CCD高清镜头与TFT基板边缘的对位靶标对标，靶标重合后开始镀膜。
所述3)中金属边框厚50nm±5nm,阻抗≤15Ω/sq。
所述遮挡板为不锈钢材质。
一种利用所述TFT液晶基板金属边框局部镀膜工艺生产的TFT液晶基板，TFT基板的镀膜面设有ITO层，TFT基板的边缘设有BM区域，其特征在于：所述BM区域上方镀制有金属边框。
本发明通过改进工艺在基板边缘镀制金属边框，与现有单纯的ITO导电膜相比，产品在保证原有的高透过率及低反射率的情况下，屏幕触控反应速度及触控稳定性明显提升，并且产品设计方案已投入到实际生产中并量产，根据客户段反馈的结果，该产品性能优良。
附图说明
下面对本发明说明书中每幅附图表达的内容作简要说明：
图1为基板局部镀制金属边框的示意图；
图2为金属边框制作示意图。
具体实施方式
本发明针对TFT表面膜层结构进行发明更改，以及对生产工艺进行严格的管控，在保证原有ITO产品的高透过率，低反射率的同时提高产品的感知反应速度及极端环境下的稳定性，改良TFT基板表面镀膜设计和对生产过程中的工艺管控，来实现屏幕性能的提升。
TFT超薄液晶基板制作工艺如下：
1、TFT基板整面镀上ITO膜；先整张基板整面镀上常规ITO膜；保证ITO膜的高透过、低反射等条件，ITO膜的透过率≥93％以上，反射率≤0.5％以内。
2、使用遮挡板(mask)阻挡的方式在每单个屏幕的边缘MB区域局部镀上Metal-border膜；根据产品设计制作对应遮挡板，遮挡板的设计需满足镀膜条件，大张遮挡板上具有镀膜间隙，遮挡板的大小根据一次性制作的TFT基板数量来定。
遮挡板为不锈钢材质，因不锈钢材质强度大，不易变形；表面光滑，与基本贴合时不会对TFT玻璃基板产生损伤；材料密度大，在真空镀膜时，放气量小，不易破坏真空镀膜环境；
镀金属边框(Metal-border)时，使用之前设计的遮挡板，与TFT基板需镀膜面贴合，贴合过程需重点管控Metal-border的精度，Metal-border的位置精度≤0.3mm；
为保证产品质量，确保局部Metal-border的精度，mask与基板贴合对位时使用CCD高清镜头与TFT基板边缘的对位靶标对标，靶标重合后开始镀膜。
3、金属镀膜；Metal-border选用磁控溅射方式镀膜，该镀膜方式膜层附着力强、膜层致密、膜厚均匀；金属镀膜会从遮挡板的镀膜间隙渗入沉积在TFT基板上(BM区域)，Metal-border膜层主要性能如下：膜厚50nm±5nm,阻抗≤15Ω/sq。
上面结合附图对本发明进行了示例性描述，显然本发明具体实现并不受上述方式的限制，只要采用了本发明的方法构思和技术方案进行的各种非实质性的改进，或未经改进将本发明的构思和技术方案直接应用于其它场合的，均在本发明的保护范围之内。

Claims (6)

1.TFT液晶基板金属边框局部镀膜工艺，其特征在于：
1)在TFT基板的镀膜面镀制ITO膜；
2)将遮挡板覆盖在TFT基板的镀膜面，所述遮挡板上预留有镂空的镀膜间隙，所述镀膜间隙位置与TFT基板上镀至金属边框位置相同；
3)在遮挡板上镀至金属膜，金属膜透过镀膜间隙沉积在ITO膜上的金属层构成金属边框；
4)取下遮挡板。
2.根据权利要求1所述的TFT液晶基板金属边框局部镀膜工艺，其特征在于：所述1)中，TFT基板的镀膜面整面镀制有一层ITO膜，所述ITO膜的透过率≥93％以上，反射率≤0.5％以内。
3.根据权利要求1或2所述的TFT液晶基板金属边框局部镀膜工艺，其特征在于：所述2)中遮挡板覆盖在TFT基板上时，mask与基板贴合对位时使用CCD高清镜头与TFT基板边缘的对位靶标对标，靶标重合后开始镀膜。
4.根据权利要求3所述的TFT液晶基板金属边框局部镀膜工艺，其特征在于：所述3)中金属边框厚50nm±5nm,阻抗≤15Ω/sq。
5.根据权利要求1或4所述的TFT液晶基板金属边框局部镀膜工艺，其特征在于：所述遮挡板为不锈钢材质。
6.一种利用如权利要求1-5所述TFT液晶基板金属边框局部镀膜工艺生产的TFT液晶基板，TFT基板的镀膜面设有ITO层，TFT基板的边缘设有BM区域，其特征在于：所述BM区域上方镀制有金属边框。
CN201710657166.4A 2017-08-03 2017-08-03 Tft液晶基板金属边框局部镀膜工艺 Pending CN107227439A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113427921A (zh) * 2021-06-01 2021-09-24 Tcl华星光电技术有限公司 银浆转印方法、Micro-LED移印方法及Micro-LED
CN114908317A (zh) * 2022-06-29 2022-08-16 芜湖长信科技股份有限公司 一种tft-lcd金属边框处理工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103941901A (zh) * 2013-01-18 2014-07-23 胜华科技股份有限公司 触控面板
CN105389033A (zh) * 2014-08-31 2016-03-09 乐金显示有限公司 显示装置以及使用掩模制造显示装置的方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103941901A (zh) * 2013-01-18 2014-07-23 胜华科技股份有限公司 触控面板
CN105389033A (zh) * 2014-08-31 2016-03-09 乐金显示有限公司 显示装置以及使用掩模制造显示装置的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113427921A (zh) * 2021-06-01 2021-09-24 Tcl华星光电技术有限公司 银浆转印方法、Micro-LED移印方法及Micro-LED
CN114908317A (zh) * 2022-06-29 2022-08-16 芜湖长信科技股份有限公司 一种tft-lcd金属边框处理工艺

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Application publication date: 20171003