CN107204273B - 半导体器件的制造方法、衬底处理装置及衬底处理方法 - Google Patents
半导体器件的制造方法、衬底处理装置及衬底处理方法 Download PDFInfo
- Publication number
- CN107204273B CN107204273B CN201710063648.7A CN201710063648A CN107204273B CN 107204273 B CN107204273 B CN 107204273B CN 201710063648 A CN201710063648 A CN 201710063648A CN 107204273 B CN107204273 B CN 107204273B
- Authority
- CN
- China
- Prior art keywords
- gas
- electrode portion
- substrate
- reaction tube
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 110
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 100
- 238000006243 chemical reaction Methods 0.000 claims abstract description 82
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 15
- 239000007789 gas Substances 0.000 description 193
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 16
- 239000002994 raw material Substances 0.000 description 16
- 230000005684 electric field Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 238000007789 sealing Methods 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 239000002052 molecular layer Substances 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- -1 SUS are constituted Chemical class 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- AHJCYBLQMDWLOC-UHFFFAOYSA-N n-methyl-n-silylmethanamine Chemical compound CN(C)[SiH3] AHJCYBLQMDWLOC-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910016455 AlBN Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- IUBCUJZHRZSKDG-UHFFFAOYSA-N C(C)N(C)[Hf] Chemical compound C(C)N(C)[Hf] IUBCUJZHRZSKDG-UHFFFAOYSA-N 0.000 description 1
- YIEILJQNSJUXSE-UHFFFAOYSA-N CCCCN[Si] Chemical compound CCCCN[Si] YIEILJQNSJUXSE-UHFFFAOYSA-N 0.000 description 1
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910003863 HfBN Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910015215 MoBN Inorganic materials 0.000 description 1
- 229910015659 MoON Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SKYWAOSWRWWISV-UHFFFAOYSA-N N-propan-2-yl-N-(2-silylethyl)propan-2-amine Chemical compound C(C)(C)N(C(C)C)CC[SiH3] SKYWAOSWRWWISV-UHFFFAOYSA-N 0.000 description 1
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 description 1
- IHTAVMHKEISGKU-UHFFFAOYSA-N N[SiH3].N[SiH3] Chemical compound N[SiH3].N[SiH3] IHTAVMHKEISGKU-UHFFFAOYSA-N 0.000 description 1
- 229910019744 NbBN Inorganic materials 0.000 description 1
- 229910020055 NbON Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910007245 Si2Cl6 Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910005096 Si3H8 Inorganic materials 0.000 description 1
- 229910003697 SiBN Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- 229910010060 TiBN Inorganic materials 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007950 ZrBN Inorganic materials 0.000 description 1
- 229910006252 ZrON Inorganic materials 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- CUZMQPZYCDIHQL-VCTVXEGHSA-L calcium;(2s)-1-[(2s)-3-[(2r)-2-(cyclohexanecarbonylamino)propanoyl]sulfanyl-2-methylpropanoyl]pyrrolidine-2-carboxylate Chemical compound [Ca+2].N([C@H](C)C(=O)SC[C@@H](C)C(=O)N1[C@@H](CCC1)C([O-])=O)C(=O)C1CCCCC1.N([C@H](C)C(=O)SC[C@@H](C)C(=O)N1[C@@H](CCC1)C([O-])=O)C(=O)C1CCCCC1 CUZMQPZYCDIHQL-VCTVXEGHSA-L 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical class CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本发明提供一种能够实现均匀的衬底处理的半导体器件的制造方法、衬底处理装置及衬底处理方法。在衬底处理装置中,具有:反应管,其在内部形成对衬底进行处理的处理室;加热装置,其设在反应管的外部,对处理室进行加热;气体供给部,其设在反应管内,供给对衬底进行处理的处理气体;和等离子体生成部,其具备电极,该电极以包围反应管的外壁整周的方式交替地设有与高频电源连接的第一电极部和接地的第二电极部,等离子体生成部至少根据高频电源的频率和对电极施加的电压来确定相邻的第一电极部与第二电极部的电极间距离。
Description
技术领域
本发明涉及半导体器件的制造方法、衬底处理装置及衬底处理方法。
背景技术
作为半导体器件(device)的制造工序的一个工序,有时进行如下衬底处理:将衬底搬入到衬底处理装置的处理室内,向处理室内供给原料气体和反应气体,来在衬底上形成绝缘膜、半导体膜、导体膜等各种膜,或者除去各种膜。
在形成有精细图案的量产器件中,为了抑制杂质的扩散、能够使用有机材料等耐热性低的材料而谋求低温化。
现有技术文献
专利文献
专利文献1:日本特开2007-59527号公报
发明内容
为了解决这样的问题,一般使用等离子体来进行衬底处理,但是,由等离子体生成的离子和/或自由基等活性种根据种类而量和寿命存在偏差,因此难以均匀地对膜进行处理。
本发明的目的在于提供一种能够实现均匀的衬底处理的技术。
根据本发明的一个方案,提供如下技术:
衬底处理装置具有:反应管,在其内部形成对衬底进行处理的处理室;加热装置,其设在上述反应管的外部,对上述处理室进行加热;气体供给部,其设在上述反应管内,供给对上述衬底进行处理的处理气体;和等离子体生成部,其具备电极,该电极以包围上述反应管的外壁整周的方式交替地设有与高频电源连接的第一电极部和接地的第二电极部,上述等离子体生成部的相邻的上述第一电极部与上述第二电极部的电极间距离至少由上述高频电源的频率和对上述电极施加的电压确定,基于上述电极间距离来设置上述第一电极部和上述第二电极部。
发明效果
根据本发明,能够提供一种可实现均匀的衬底处理的技术。
附图说明
图1是在本发明的第1实施方式中优选使用的衬底处理装置的纵型处理炉的概略结构图,是以纵截面表示处理炉部分的图。
图2是在本发明的实施方式中优选使用的衬底处理装置的纵型处理炉的概略结构图,是示出图1中用A-A线剖切处理炉部分得到的图。
图3是用于说明图1所示的衬底处理装置中的等离子体生成部的结构的图。
图4是图1所示的衬底处理装置中的控制器的概略结构图,是表示控制器的控制***的一例的框图。
图5是表示使用图1所示的衬底处理装置的衬底处理工艺的一例的流程图。
图6是表示本发明中的第1实施方式的变形例1的图。
图7是表示本发明中的第1实施方式的变形例2的图,(a)是表示第1变形例2的图,(b)是表示第2变形例2的图,(c)是表示第3变形例2的图,(d)是表示第4变形例2的图,(e)是表示第5变形例2的图。
附图标记说明
200…晶片,201…处理室,203…反应管,207…加热器(加热装置),217…舟皿,232a、232b、232c、232d…气体供给管,249a、249b…喷嘴,250a、250b、250c…气体供给孔,300…电极,310…高频电源
具体实施方式
<发明的实施方式>
以下,参照图1至图5来说明本发明的实施方式。
(1)衬底处理装置的结构
(加热装置)
如图1所示,处理炉202具有作为加热装置(加热机构)的加热器207。加热器207为圆筒形状,通过支承于作为保持板的加热器基台(未图示)而被垂直地安装。加热器207也如后述那样作为以热量使气体活化(激发)的活化机构(激发部)而发挥功能。
(处理室)
在加热器207的内侧,配设有后述的等离子体生成部的电极300。而且,在电极300的内侧,与加热器207呈同心圆状地配设有反应管203。反应管203由例如石英(SiO2)、碳化硅(SiC)或氮化硅(SiN)等耐热性材料构成,形成为上端封闭且下端开口的圆筒形状。在反应管203的下方,与反应管203呈同心圆状地配设有集流腔(manifold)209。集流腔209由例如不锈钢(SUS)等金属构成,形成为上端及下端开口的圆筒形状。集流腔209的上端部与反应管203的下端部卡合,以支承反应管203的方式构成。在集流腔209与反应管203之间设有作为密封部件的O型环220a。集流腔209支承于加热器基台,由此成为反应管203被垂直地安装的状态。主要由反应管203和集流腔209构成处理容器(反应容器)。在处理容器的筒中空部形成有处理室201。处理室201构成为能够收容多片作为衬底的晶片200。此外,处理容器不限于上述结构,也存在仅将反应管203称为处理容器的情况。
(气体供给部)
在处理室201内,以贯穿集流腔209的侧壁的方式设有喷嘴249a、249b。在喷嘴249a、249b上分别连接有气体供给管232a、232b。像这样,在处理容器上设有两个喷嘴249a、249b和两条气体供给管232a、232b,能够向处理室201内供给多种气体。此外,在仅将反应管203作为处理容器的情况下,喷嘴249a、249b也可以以贯穿反应管203的侧壁的方式设置。
在气体供给管232a、232b上,从上游方向起按顺序分别设有作为流量控制器(流量控制部)的质量流量控制器(MFC)241a、241b及作为开闭阀的阀243a、243b。在气体供给管232a、232b的比阀243a、243b靠下流侧的位置,分别连接有供给非活性气体的气体供给管232c、232d。在气体供给管232c、232d上,从上游方向起按顺序分别设有MFC 241c、241d及阀243c、243d。
喷嘴249a、249b在反应管203的内壁与晶片200之间的俯视下呈圆环状的空间中,分别设置成从反应管203的内壁下部沿着上部而朝向晶片200的堆载方向上方立起。即,喷嘴249a、249b在搬入到处理室201内的各晶片200的端部(周缘部)的侧方分别设置成与晶片200的表面(平坦面)垂直。在喷嘴249a、249b的侧面分别设有供给气体的气体供给孔250a、250b。气体供给孔250a以朝向反应管203的中心的方式开口,能够朝向晶片200供给气体。气体供给孔250a、250b分别在从反应管203的下部到上部的范围内设有多个。
像这样,在本实施方式中,经由在由反应管203的侧壁的内壁和排列于反应管203内的多片晶片200的端部(周缘部)定义的俯视下呈圆环状的纵长的空间内、即、圆筒状的空间内配置的喷嘴249a、249b来搬送气体。而且,从分别在喷嘴249a、249b上开口的气体供给孔250a、250b在晶片200附近首先向反应管203内喷出气体。而且,使反应管203内的气体的主要流向成为与晶片200的表面平行的方向、即水平方向。通过成为这样的结构,能够向各晶片200均匀地供给气体,能够提高形成于各晶片200的膜的膜厚均匀性。在晶片200的表面上流过的气体、即反应后的残余气体朝向排气口、即后述的排气管231的方向流动。但是,该残余气体的流动方向根据排气口的位置而适当确定,并不限于垂直方向。
从气体供给管232a经由MFC 241a、阀243a、喷嘴249a而向处理室201内供给例如含有作为规定元素的硅(Si)的硅烷原料气体来作为含有规定元素的原料。
硅烷原料气体是指气体状态的硅烷原料,例如通过使在常温常压下为液体状态的硅烷原料气化而得到的气体、在常温常压下为气体状态的硅烷原料等。在本说明书中使用“原料”这一术语的情况,存在表示“液体状态的液体原料”的情况、表示“气体状态的原料气体”的情况、或表示其双方的情况。
作为硅烷原料气体,能够使用例如含有Si及氨基(胺基)的原料气体,即,能够使用氨基硅烷(amino silane)原料气体。氨基硅烷原料是指具有氨基的硅烷原料,另外,也可以是含有甲基、乙基或丁基等烷基的硅烷原料,是指至少含有Si、氮(N)及碳(C)的原料。即,在此所说的氨基硅烷原料也可以称为有机类原料,还可以称为有机氨基硅烷原料。
作为氨基硅烷原料气体,能够使用例如双(叔丁基氨基)硅烷(SiH2[NH(C4H9)]2,简称:BTBAS)气体。BTBAS也可以说是在一个分子中含有一个Si、具有Si-N键、N-C键且不具有Si-C键的原料气体。BTBAS气体作为Si来源而发挥作用。
在使用BTBAS这样常温常压下为液体状态的液体原料的情况下,使液体状态的原料通过气化器或起泡器(bubbler)等气化***而气化,并作为硅烷原料气体(BTBAS气体等)而供给。
从气体供给管232b,作为化学结构与原料不同的反应体(反应物:reactant),经由MFC 241b、阀243b、喷嘴249b向处理室201内供给例如含氧(O)气体。
含O气体作为氧化剂(氧化气体)、即O来源而发挥作用。作为含O气体,能够使用例如氧(O2)气或水蒸气(H2O气体)等。在作为氧化剂而使用O2气体的情况下,例如,使用后述的等离子体源对该气体进行等离子体激发,使其作为等离子体激发气体(O2 *气体)而供给。
从气体供给管232c、232d,作为非活性气体,分别经由MFC241c、241d、阀243c、243d、气体供给管232a、232b、喷嘴249a、249b向处理室201内供给例如氮(N2)气。
主要由气体供给管232a、MFC 241a、阀243a构成作为第1气体供给***的原料供给***。主要由气体供给管232b、MFC 241b、阀243b构成作为第2气体供给***的反应体供给***(反应物供给***)。主要由气体供给管232c、232d、MFC 241c、241d、阀243c、243d构成非活性气体供给***。也将原料供给***、反应体供给***及非活性气体供给***简称为气体供给***(气体供给部)。
(衬底支承件)
如图1所示,作为衬底支承件的舟皿217构成为将多片例如25~200片晶片200以水平姿势且中心彼此对齐的状态沿垂直方向排列而以多级支承,即,使多片晶片200隔开间隔地排列。舟皿217由例如石英或SiC等耐热性材料构成。在舟皿217的下部,多级地支承有由例如石英或SiC等耐热性材料构成的隔热板218。通过该结构,来自加热器207的热量难以传递到密封盖219侧。但是,本实施方式不限定于这样的方式。例如,也可以不在舟皿217的下部设置隔热板218,而设置由石英或SiC等耐热性材料形成的作为筒状部件构成的隔热筒。
(等离子体生成部)
接下来使用图1至图3来说明等离子体生成部。
如图2所示,等离子体是使用容性耦合等离子体(Capacitively Coupled Plasma,简称:CCP)而在供给反应气体时在由石英等制成的真空隔壁即反应管203的内部生成的。
如图2所示,电极300在反应管203与加热器207之间以包围反应管203整周的方式配置。从高频电源310经由匹配器303向电极300输入有例如频率为13.56MHz的高频。电极300主要由与高频电源连接的第一电极部301、和接地的第二电极部302构成。在相邻的第一电极部301与第二电极部302之间产生电场304,通过该电场在反应管203内生成等离子体。在此,如图2所示,电场304通过后述的电极间距离D(电极间隔D)而形成最小的电场304-1,通过同样后述的电极节距(第一电极301与第二电极302的中心间距离)而形成最大的电场304-2。换言之,最小的电场304-1受电极间距离D影响而形成,最大的电场304-2受电极节距(pitch)影响而形成。如图3所示,第一电极部301和第二电极部302沿与气体喷嘴249a、249b的延伸方向相同的方向相互平行地交错地延伸。通过像这样构成、配置电极300,能够在反应管203内的整个区域均等地生成等离子体,能够通过均等地生成的等离子体从晶片200的整周供给用于衬底处理的活性种。主要由电极300(第一电极部301、第二电极部302)、匹配器303、高频电源310构成等离子体生成部。
在此,如图3所示,第一电极部301与第二电极部302的电极间距离D需要确定成由高频电源310施加的电子能够不与第一电极部301或第二电极部302的电极发生碰撞地进行往复运动。因此,电极间距离D能够通过能量守恒定律和简谐振动的式子,由以下的算式1确定。通过将电极间距离D设置成由算式1确定的值或其附近值(1/2倍以上、2倍以下的范围内的值),能够提高等离子体的生成效率。假设在将电极间距离D设为小于由算式确定的值的1/2倍的情况下,电极侧的电子消失变得显著,等离子体容易失活。另外,在将电极间距离D设为大于由算式确定的值的2倍的情况下,针对电子的电气作用明显变弱,等离子体的生成效率变差。
【算式1】
其中,V为电压,f为频率,m为质量,e/m为电子的荷质比。
在上述算式中,V是电极间的电压,f是高频电源的频率,e/m是电子的荷质比。
例如,在选择成高频电源的频率为2MHz以上、60MHz以下的范围,电极间的电压为25V以上、1000V以下的范围的情况下,电极间隔D能够通过算式1在大约0.5mm~94mm的范围内确定。
电极300也能够由铝、铜、不锈钢等金属构成,但通过由镍等耐氧化材料构成,能够在抑制电极表面的电导率劣化的同时进行衬底处理。通过抑制电极表面的电导率劣化,能够抑制等离子体生成效率的劣化。
在纵型衬底处理装置中,将反应室温度设为500℃,将反应室压力设为氮气100Pa,将高频电源的频率设为13.56MHz而实施,采用长度为1m、电极宽度为15mm的高频电极,以极性在管形状的反应管的外壁上交替的方式以电极间隔D=10mm配置多条高频电极,生成CCP模式的等离子体。此外,反应管的内壁与晶片的间隙以同心圆设置成50mm。
在此,优选衬底处理时的炉内压力被控制在10Pa以上、300Pa以下的范围内。其原因在于,在炉内的压力低于10Pa的情况下,气体分子的平均自由程与等离子体的德拜长度相比变长,直接叩击炉壁的等离子体变得显著化,因此难以抑制微粒的产生。另外,在炉内的压力高于300Pa的情况下,等离子体的生成效率饱和,因此,即使供给反应气体,等离子体的生成量也不会发生变化,只会无谓地消耗反应气体。
另外,优选本实施例中的电极节距被设定成反应管的厚度t的2倍以上、晶片周缘部与反应管外壁的距离的2倍以下,具体优选在10mm以上、110mm以下的范围内进行设定而构成电极。其原因在于,如图2所示在将电极节距设定得小于反应管的厚度t的2倍的情况下,向电极间施加高频电压而产生的所有的电场304在反应管的径向上短于反应管的厚度。即,不会在反应管的内侧形成电场304,产生的等离子体易于在反应管表面沿面放电,因此等离子体的生成效率降低。另外,在将电极节距设定得大于晶片周缘部与反应管外壁的距离的2倍的情况下,上述的电场304在反应管的径向上变长,电场304到达晶片周缘部而容易在电极与晶片周缘部之间产生等离子体。若在电极与晶片周缘部之间产生等离子体,则会在晶片上产生等离子体破坏,而膜质降低。
高频电源的频率需要设定成使在等离子体中往复运动的电子具有不会与第一电极301和第二电极302分别发生碰撞地进行振动的振动振幅的频率。根据能量守恒定律和简谐振动的公式,电子能够不与电极发生碰撞地进行振动的最小频率f0能够用以下的算式2表示。此外,振动振幅的最大值X相当于将电极中央间相连的高频电压V的电力线的一半,与算式1同样地e/m是电子的荷质比。只要高频电源的频率为最小的频率f0的值以上,就能够确保电极侧的不会消失的电子,因此能够期待等离子体生成效率的提高。
【算式2】
通过电极间的电压生成的电场由于电介体、等离子体屏蔽等的效果而减弱,因此它们的内侧的电压下降。因此,在算式1、算式2中,在将反应管的相对介电常数εr、等离子体的德拜屏蔽考虑在内的情况下,需要对电极间的电压V进行下述修正。
【算式3】
在上述的算式中,t为反应管的厚度,exp(1)为纳皮尔数(自然对数的底)。在后述的本实施例中,最小频率f0在最大电压V=1000V时为4.5MHz,例如,在上述的高频电源的频率为13.56MHz的情况下,为最小频率f0以上,因此能够实现高效率的等离子体生成。
通过像这样由算式1、算式2、算式3来确定电极间距离D,能够提高等离子体的生成效率,能够在提高晶片处理的均匀性的同时,提高晶片处理的速度。
(排气部)
在反应管203上,如图1所示设有对处理室201内的环境气体进行排气的排气管231。在排气管231上,经由检测处理室201内的压力的作为压力检测器(压力检测部)的压力传感器245及作为排气阀(压力调整部)的APC(Auto Pressure Controller:自动压力控制器)阀244而连接有作为真空排气装置的真空泵246。APC阀244是如下构成的阀:在使真空泵246动作的状态下,通过对阀进行开闭而能够进行处理室201内的真空排气及真空排气停止,而且,在使真空泵246动作的状态下,基于由压力传感器245检测到的压力信息来调节阀开度,由此能够调整处理室201内的压力。主要由排气管231、APC阀244、压力传感器245构成排气***。但也可以考虑将真空泵246包含在排气***内。排气管231不限于设在反应管203的情况,也可以与喷嘴249a、249b同样地设于集流腔209。
(周边装置)
在集流腔209的下方设有能够将集流腔209的下端开口气密地封闭的作为炉口盖体的密封盖219。密封盖219构成为从垂直方向下侧与集流腔209的下端抵接。密封盖219由例如SUS等金属构成,形成为圆盘状。在密封盖219的上表面,设有与集流腔209的下端抵接的作为密封部件的O型环220b。
在密封盖219的与处理室201相反的一侧,设置有使舟皿217旋转的旋转机构267。旋转机构267的旋转轴255贯穿密封盖219而与舟皿217连接。旋转机构267构成为通过使舟皿217旋转来使晶片200旋转。密封盖219构成为通过垂直地设置在反应管203外部的作为升降机构的舟皿升降机115而沿垂直方向升降。舟皿升降机115构成为通过使密封盖219升降而能够将舟皿217相对于处理室201内外搬入及搬出。
舟皿升降机115构成为将舟皿217即晶片200搬送到处理室201内外的搬送装置(搬送机构)。另外,在集流腔209的下方,设有在通过舟皿升降机115使密封盖219下降的期间,能够气密地密封集流腔209的下端开口的作为炉口盖体的闸门219s。闸门219s由例如SUS等金属构成,形成为圆盘状。在闸门219s的上表面,设有与集流腔209的下端抵接的作为密封部件的O型环220c。闸门219s的开闭动作(升降动作、转动动作等)由闸门开闭机构115s控制。
在反应管203的内部,设置有作为温度检测器的温度传感器263。通过基于由温度传感器263检测到的温度信息来调整对加热器207的通电情况,处理室201内的温度成为所期望的温度分布。温度传感器263与喷嘴249a、249b同样地,沿着反应管203的内壁设置。
(控制装置)
接下来使用图4来说明控制装置。图4是表示图1所示的衬底处理装置中的控制器的一例的框图。如图4所示,作为控制部(控制装置)的控制器121构成为具备CPU(CentralProcessing Unit:中央处理单元)121a、RAM(Random Access Memory:随机存取存储器)121b、存储装置121c、I/O端口121d的计算机。RAM121b、存储装置121c、I/O端口121d构成为能够经由内部总线121e与CPU121a进行数据交换。在控制器121上连接有例如构成为触摸面板等的输入输出装置122。
存储装置121c由例如闪存器、HDD(Hard Disk Drive:硬盘驱动)等构成。在存储装置121c内,能够读取地存储有对衬底处理装置的动作进行控制的控制程序、记载有后述的成膜处理的步骤和条件等的工艺配方(process recipe)等。工艺配方是以能够使控制器121执行后述的各种处理(成膜处理)中的各步骤并得到规定结果的方式进行组合而成的,作为程序发挥功能。以下,将工艺配方和控制程序等也简单地总称为程序。另外,也将工艺配方简称为配方。在本说明书中使用程序这一术语的情况,存在仅包含配方单方的情况、仅包含控制程序单方的情况、或者包含其双方的情况。RAM121b构成为暂时保持由CPU121a读出的程序、数据等的存储区域(工作区域)。
I/O端口121d与上述的MFC241a~241d、阀243a~243d、压力传感器245、APC阀244、真空泵246、加热器207、温度传感器263、旋转机构267、舟皿升降机115、闸门开闭机构115s、高频电源310等连接。
CPU121a构成为从存储装置121c读取并执行控制程序,并且根据来自输入输出装置122的操作指令的输入等而从存储装置121c读取配方。CPU121a构成为以遵照所读取的配方的内容的方式,来控制旋转机构267、由MFC 241a~241d进行的各种气体的流量调整动作、阀243a~243d的开闭动作、APC阀244的开闭动作及基于压力传感器245且由APC阀244进行的压力调整动作、真空泵246的起动及停止、基于温度传感器263的加热器207的温度调整动作、由旋转机构267进行的舟皿217的正反旋转、旋转角度及旋转速度调节动作、由舟皿升降机115进行的舟皿217的升降动作、由闸门开闭机构115s进行的闸门219s的开闭动作、高频电源310的电力供给等。
控制器121能够通过将存储在外部存储装置(例如,硬盘等磁盘、CD等光盘、MO等光磁盘、USB存储器等半导体存储器)123中的上述程序安装于计算机而构成。存储装置121c和外部存储装置123构成为计算机可读的记录介质。以下,也将其简单地总称为记录介质。在本说明书中使用记录介质这一术语的情况,存在仅包含存储装置121c单方的情况、仅包含外部存储装置123单方的情况、或包含其双方的情况。此外,程序向计算机的提供也可以不使用外部存储装置123而使用因特网或专用回线等通信手段来进行。
(2)衬底处理工序
使用图5来说明作为半导体器件(device)的制造工序的一个工序,使用上述衬底处理装置在衬底上形成膜的工艺例。在以下的说明中,通过控制器121来控制构成衬底处理装置的各部分的动作。
在本说明书,为便于说明,有时也如以下那样示出图5所示的成膜处理的顺序。在以下的变形例和其他实施方式的说明中也使用相同的表述。
在本说明书中使用“晶片”这一术语的情况,存在表示“晶片自身”的情况、表示“晶片与形成在其表面上的规定的层和/或膜等的层叠体(集合体)”的情况,即,存在将形成于表面的规定的层和/或膜等包含在内称为“晶片”的情况。另外,在本说明书中使用“晶片的表面”这一术语的情况,存在表示“晶片自身的表面(露出面)”的情况、表示“形成于晶片上的规定的层和/或膜等的表面、即作为层叠体的晶片的最外表面”的情况。
因此,在本说明书中记载为“对晶片供给规定的气体”的情况,存在表示“对晶片自身的表面(露出面)直接供给规定的气体”的情况、表示“对形成于晶片上的层和/或膜等、即对作为层叠体的晶片的最外表面供给规定的气体”的情况。另外,在本说明书中记载为“在晶片上形成规定的层(或膜)”的情况,存在表示“在晶片自身的表面(露出面)上直接形成规定的层(或膜)”的情况、表示“在形成于晶片上的层和/或膜等上、即在作为层叠体的晶片的最外表面上形成规定的层(或膜)”的情况。
另外,在本说明书中使用“衬底”这一术语的情况,也与使用“晶片”这一术语的情况同义。
(搬入步骤:S1)
当将多片晶片200装填到舟皿217(晶片装载)后,通过闸门开闭机构115s使闸门219s移动,集流腔209的下端开口开放(闸门打开)。然后,如图1所示,支承着多片晶片200的舟皿217通过舟皿升降机115被提升而向处理室201内搬入(舟皿装入)。在该状态下,成为密封盖219经由O型环220b将集流腔209的下端密封的状态。
(压力、温度调整步骤:S2)
以使处理室201的内部、即晶片200所存在的空间成为所期望的压力(真空度)的方式,通过真空泵246进行真空排气(减压排气)。此时,由压力传感器245测定处理室201内的压力,APC阀244基于该测定到的压力信息来进行反馈控制。真空泵246至少在后述的成膜步骤结束之前的期间维持始终动作的状态。
另外,通过加热器207进行加热以使得处理室201内的晶片200成为所期望的温度。此时,以处理室201内成为所期望的温度分布的方式,基于温度传感器263所检测到的温度信息对向加热器207的通电状况进行反馈控制。由加热器207对处理室201内的加热至少在后述的成膜步骤结束之前的期间持续进行。但是,在室温以下的温度条件下进行成膜步骤的情况下,也可以不由加热器207进行处理室201内的加热。此外,在仅进行这样的温度下的处理的情况下,不需要加热器207,也可以不在衬底处理装置中设置加热器207。该情况下,能够简化衬底处理装置的结构。
接着,通过旋转机构267开始舟皿217及晶片200的旋转。通过旋转机构267进行的舟皿217及晶片200的旋转至少在后述的成膜步骤结束之前的期间持续进行。
(成膜步骤:S3、S4、S5、S6)
然后,通过依次执行步骤S3、S4、S5、S6来进行成膜步骤。
(原料气体供给步骤:S3、S4)
在步骤S3中,对处理室201内的晶片200供给BTBAS气体。
打开阀243a,使BTBAS气体向气体供给管232a内流动。BTBAS气体通过MFC 241a而被调整流量,经由喷嘴249a从气体供给孔250a向处理室201内供给,并从排气管231排气。此时,对晶片200供给BTBAS气体。此时,同时打开阀243c,使N2气体向气体供给管232c内流动。N2气体通过MFC 241c而被调整流量,与BTBAS气体一起向处理室201内供给,并从排气管231排气。
另外,为了防止BTBAS气体向喷嘴249b内的侵入,打开阀243d,使N2气体向气体供给管232d内流动。N2气体经由气体供给管232b、喷嘴249b向处理室201内供给,并从排气管231排气。
由MFC 241a控制的BTBAS气体的供给流量为例如1sccm以上、2000sccm以下,优选为10sccm以上、1000sccm以下的范围内的流量。由MFC 241c、241d控制的N2气体的供给流量分别为例如100sccm以上、10000sccm以下的范围内的流量。处理室201内的压力如上所述,为例如1以上、2666Pa以下,优选为67Pa以上、1333Pa以下的范围内的压力。对晶片200供给BTBAS气体的时间为例如1秒以上、100秒以下,优选为1秒以上、50秒以下的范围内的时间。
加热器207的温度设定成如下温度:使晶片200的温度成为例如0℃以上150℃以下,优选成为室温(25℃)以上100℃以下,更优选成为40℃以上90℃以下的范围内的温度。BTBAS气体是容易向晶片200等吸附且反应性高的气体。因此,即使在例如室温程度的低温下,也能够使BTBAS气体化学吸附在晶片200上,能够得到实用的成膜速率。如本实施方式那样,通过使晶片200的温度为150℃以下、进而为100℃以下、更进而为90℃以下,能够降低对晶片200施加的热量,能够良好地控制晶片200所受的热历史。另外,只要为0℃以上的温度,就能够使BTBAS充分地吸附在晶片200上,得到充分的成膜速率。由此,晶片200的温度可以为0℃以上150℃以下,优选为室温以上100℃以下,更优选为40℃以上90℃以下的范围内的温度。
通过在上述条件下对晶片200供给BTBAS气体,在晶片200(表面的底膜)上形成有例如不足1原子层(1分子层)到数原子层(数分子层)程度的厚度的含Si层。含Si层可以是Si层,也可以是BTBAS的吸附层,还可以包含其双方。
Si层是除由Si构成的连续层以外还包含不连续层、将连续层和不连续层重叠而成的Si薄膜的总称。构成Si层的Si包含与氨基之间的键没有被完全切断的情况,也包含与H之间的键没有被完全切断的情况。
BTBAS的吸附层除由BTBAS分子构成的连续的吸附层以外,还包含不连续的吸附层。构成BTBAS的吸附层的BTBAS分子包含Si与氨基之间的键被一部分切断的情况,也包含Si与H之间的键被一部分切断的情况,还包括N与C之间的键被一部分切断的情况等。即,BTBAS的吸附层可以是BTBAS的物理吸附层,也可以是BTBAS的化学吸附层,还可以包含其双方。
在此,不足1原子层(1分子层)的厚度的层是指不连续地形成的原子层(分子层),1原子层(1分子层)的厚度的层是指连续地形成的原子层(分子层)。含Si层能够包含Si层和BTBAS的吸附层双方。但是,如上所述,对于含Si层使用“1原子层”、“数原子层”等表述,将“原子层”与“分子层”同义地使用。
在BTBAS会自分解(热分解)的条件下,即,在产生BTBAS的热分解反应的条件下,通过在晶片200上堆积Si而形成Si层。在BTBAS不会自分解(热分解)的条件下,即,在不会产生BTBAS的热分解反应的条件下,通过在晶片200上吸附BTBAS而形成BTBAS的吸附层。但是,在本实施方式中,由于将晶片200的温度设为例如150℃以下的低温,所以难以产生BTBAS的热分解。其结果为,容易在晶片200上形成BTBAS的吸附层而并非Si层。
当形成在晶片200上的含Si层的厚度超过数原子层时,后述的改性处理下的改性作用不会作用于含Si层整体。另外,能够形成在晶片200上的含Si层的厚度的最小值为不足1原子层。由此,优选含Si层的厚度为不足1原子层到数原子层程度。通过使含Si层的厚度为1原子层以下、即1原子层或不足1原子层,能够相对提高后述的改性处理下的改性作用,能够缩短改性处理的改性反应所需的时间。另外,也能够缩短成膜处理的含Si层的形成所需的时间。其结果为,能够缩短每一循环的处理时间,也能够缩短总处理时间。即,也能够提高成膜速率。另外,通过将含Si层的厚度设为1原子层以下,也能够提高对膜厚均匀性的控制性。
在形成了含Si层后,关闭阀243a,停止BTBAS气体向处理室201内的供给。此时,保持打开APC阀244的状态,通过真空泵246对处理室201内进行真空排气,将处理室201内残留的未反应或参与了含Si层形成之后的BTBAS气体、反应副产物等从处理室201内排除(S4)。另外,保持打开阀243c、243d的状态,维持N2气体向处理室201内的供给。N2气体作为吹扫气体而发挥作用。此外,也可以省略该步骤S4而设为原料气体供给步骤。
作为原料气体,除BTBAS气体以外,能够适合使用四(二甲氨基)硅烷(Si[N(CH3)2]4、简称:4DMAS)气体、三(二甲胺基)硅烷(Si[N(CH3)2]3H、简称:3DMAS)气体、双(二甲氨基)硅烷(Si[N(CH3)2]2H2,简称:BDMAS)气体、双(二乙基氨基)硅烷(Si[N(C2H5)2]2H2、简称:BDEAS)气体等。除此以外,作为原料气体,能够适合使用二甲氨基硅烷(DMAS)气体、二乙基氨基硅烷(DEAS)气体、二丙基氨基硅烷(DPAS)气体、二异丙基氨基硅烷(DIPAS)气体、丁基氨基硅烷(BAS)气体、六甲基二硅胺(HMDS)气体等各种氨基硅烷原料气体、或氯硅烷(SiH3Cl,简称:MCS)气体、二氯硅烷(SiH2Cl2,简称:DCS)气体、三氯硅烷(SiHCl3,简称:TCS)气体、四氯硅烷即四氯化硅(SiCl4,简称:STC)气体、六氯乙硅烷(Si2Cl6,简称:HCDS)气体、八氯硅烷(Si3Cl8,简称:OCTS)气体等无机类卤代硅烷原料气体、或甲硅烷(SiH4,简称:MS)气体、乙硅烷(Si2H6,简称:DS)气体、丙硅烷(Si3H8,简称:TS)气体等不含卤基的无机类硅烷原料气体。
作为非活性气体,除N2气体以外,也能够使用Ar气体、He气体、Ne气体、Xe气体等稀有气体。
(反应气体供给步骤:S5、S6)
在成膜处理结束后,对处理室201内的晶片200供给作为反应气体的等离子体激发后的O2气体(S5)。
在该步骤中,以与步骤S3中的阀243a、243c、243d的开闭控制相同的顺序进行阀243b~243d的开闭控制。O2气体通过MFC 241b而被调整流量,经由喷嘴249b从气体供给孔250b向处理室201内供给。此时,从高频电源310向电极300供给(施加)高频电力(在本实施方式中频率为13.56MHz)。向处理室201内供给的O2气体在处理室201的内部被激发成等离子体状态,作为活性种(O2 *)经由气体供给孔250c对晶片200供给,并从排气管231排气。此外,也将激发成等离子体状态的O2气体称为氧等离子体。
由MFC 241b控制的O2气体的供给流量为例如100sccm以上、10000sccm以下的范围内的流量。从高频电源310向电极300施加的高频电力为例如50W以上、1000W以下的范围内的电力。处理室201内的压力为例如10Pa以上、300Pa以下的范围内的压力。通过使用等离子体,即使将处理室201内的压力设为这样的比较低的压力带,也能够使O2气体活化。对晶片200供给通过对O2气体进行等离子体激发而得到的活性种的时间为例如1秒以上、100秒以下,优选为1秒以上、50秒以下的范围内的时间。其他处理条件为与上述的步骤S3相同的处理条件。
氧等离子体中生成的离子和电气上中性的活性种对形成于晶片200表面的含Si层进行后述的氧化处理。
通过在上述的条件下对晶片200供给O2气体,形成于晶片200上的含Si层被等离子体氧化。此时,通过等离子体激发后的O2气体的能量,含Si层所具有的Si-N键、Si-H键被切断。与Si之间的键被切断后的N、H、及与N键合的C从含Si层脱离。然后,由于N等的脱离而具有悬挂键(dangling bond)的含Si层中的Si与O2气体中所含的O键合,形成Si-O键。通过该反应的进行,含Si层向含Si及O的层、即向硅氧化层(SiO层)变化(改性)。
此外,对于使含Si层向SiO层改性,需要使O2气体等离子体激发后供给。这是因为,即使在非等离子体的环境气体下供给O2气体,在上述的温度带中,使含Si层氧化所需的能量也会不足,难以使N或C从含Si层充分地脱离,难以使含Si层充分地氧化而增加Si-O键。
在使含Si层向SiO层变化后,关闭阀243b,停止O2气体的供给。另外,停止高频电力向电极300的供给。而且,通过与步骤S4相同的处理顺序、处理条件,将残留在处理室201内的O2气体和反应副产物从处理室201内排除(S6)。此外,也可以省略该步骤S6而设为反应气体供给步骤。
作为氧化剂、即使等离子体激发的含O气体,除O2气体以外,还可以使用一氧化二氮(N2O)气体、一氧化氮(NO)气体、二氧化氮(NO2)气体、臭氧(O3)气体、过氧化氢(H2O2)气体、水蒸气(H2O气体)、一氧化碳(CO)气体、二氧化碳(CO2)气体等。
作为非活性气体,除N2气体以外,例如,能够使用在步骤S4中列举的各种稀有气体。
(实施规定次数:S7)
非同时地、即不同步地进行的上述的S3、S4、S5、S6(按该顺序)为1循环,通过将该循环进行规定次数(n次)、即一次以上,能够在晶片200上形成规定组成及规定膜厚的SiO膜。上述的循环优选重复进行多次。即,优选在每一循环中形成的SiO层的厚度小于所期望的膜厚,并在通过将SiO层层叠而形成的SiO膜的膜厚成为所期望的膜厚之前,多次重复进行上述循环。
(大气压恢复步骤:S8)
在上述的成膜处理完成后,分别从气体供给管232c、232d向处理室201内供给作为非活性气体的N2气体,并从排气管231排气。由此,处理室201内被非活性气体吹扫,残留在处理室201内的O2气体等被从处理室201内除去(非活性气体吹扫)。然后,将处理室201内的环境气体置换成非活性气体(非活性气体置换),处理室201内的压力恢复到常压(大气压恢复:S8)。
(搬出步骤:S9)
然后,通过舟皿升降机115使密封盖219下降,集流腔209的下端开口,并且处理完毕的晶片200在支承于舟皿217的状态下从集流腔209的下端向反应管203的外部搬出(舟皿卸出)。在舟皿卸出后,使闸门219s移动,集流腔209的下端开口经由O型环220c而被闸门219s密封(闸门关闭)。处理完毕的晶片200在被搬出到反应管203的外部后,被从舟皿217取出(晶片卸载)。此外,也可以在晶片卸载后,将空的舟皿217搬入处理室201内。
(3)本实施方式的效果
根据本实施方式,能够得到以下所示的一个或多个效果。
(a)通过将电极配置在反应管整周,能够从晶片整周均匀地供给活性种,因此能够增大到达晶片的活性种的量,能够提高晶片处理的均匀性,且提高晶片处理的处理速度。
(b)通过将电极的电极间距离设为由规定算式确定的固定值,能够提高等离子体的生成效率。另外,由于等离子体的生成效率提高,所以能够提高晶片处理的均匀性,且提高晶片处理的处理速度。
(c)通过将电极设置在处理室的外侧,不需要变更反应管内的构造,因此能够抑制处理室的颗粒物和金属污染等的生成。
(d)通过由耐氧化材料构成电极,能够减轻电极表面的氧化,能够抑制电导率的劣化。
(4)变形例
本实施方式中的衬底处理工序不限于上述方式,能够变更为以下所示的变形例。
(变形例1)
如图6所示,本实施方式中的变形例1以气体供给孔250a、250b分别朝向反应管203的内壁的方式,即,不朝向晶片200侧而朝向电极300侧的方式开口,能够向晶片200的相反侧供给气体。而且,以使反应管203内的气体的主要流向成为与晶片200的表面平行的方向、即水平方向的方式控制气体供给流量和气体排气量。通过这样构成,能够朝向电场304供给反应气体而高效地生成等离子体,容易在晶片200上生成活性种。
(变形例2)
另外,如图7所示,本实施方式中的变形例2构成为,通过在反应管内壁上设置凹凸,来扩大反应管内壁的表面积。通过这样构成,能够降低动能高的活性种的密度,能够在反应管203内增多动能低的活性种的供给量。例如,在图7的(a)的内壁上设有半球状的凹部203a。在图7的(b)的内壁上设有半球状的凸部203b。在图7的(c)的内壁上设有矩形的凸部203c。在图7的(d)的内壁上设有锥体状的凸部203d。在图7的(e)的内壁上设有锥台状的凸部203e。此外,电极300的表面也同样地可以设有凹凸。
以上,具体地说明了本发明的实施方式,但本发明不限定于上述的实施方式,在不脱离其要旨的范围内能够进行各种变更。
另外,例如,在上述的实施方式,说明了在供给原料后供给反应体的例子。本发明不限定于这样的方式,原料、反应体的供给顺序也可以相反。即,也可以在供给反应体后供给原料。通过改变供给顺序,能够使形成的膜的膜质、组成比发生变化。
在上述的实施方式等中,说明了在晶片200上形成SiO膜的例子。本发明不限定于这样的方式,在晶片200上形成碳氧化硅膜(SiOC膜)、掺碳氮氧化硅膜(SiOCN膜)、氮氧化硅膜(SiON膜)等Si类氧化膜的情况下,也能够良好地适用本发明。
例如,除上述的气体以外或在这些气体的基础上,能够使用氨(NH3)气体等含氮(N)气体、丙烯(C3H6)气体等含碳(C)气体、三氯化硼(BCl3)气体等含硼(B)气体等,形成例如SiN膜、SiON膜、SiOCN膜、SiOC膜、SiCN膜、SiBN膜、SiBCN膜、BCN膜等。此外,能够适当改变流通各气体的顺序。在进行它们的成膜的情况下,也能够以与上述实施方式相同的处理条件进行成膜,并得到与上述实施方式相同的效果。该情况下,能够对作为反应气体的氧化剂使用上述的反应气体。
另外,在晶片200上形成含有钛(Ti)、锆(Zr)、铪(Hf)、钽(Ta)、铌(Nb)、铝(Al)、钼(Mo)、钨(W)等金属元素的金属类氧化膜或金属类氮化膜的情况下,也能够良好地适用本发明。即,在晶片200上形成TiO膜、TiOC膜、TiOCN膜、TiON膜、TiN膜、TiBN膜、TiBCN膜、ZrO膜、ZrOC膜、ZrOCN膜、ZrON膜、ZrN膜、ZrBN膜、ZrBCN膜、HfO膜、HfOC膜、HfOCN膜、HfON膜、HfN膜、HfBN膜、HfBCN膜、TaO膜、TaOC膜、TaOCN膜、TaON膜、TaN膜、TaBN膜、TaBCN膜、NbO膜、NbOC膜、NbOCN膜、NbON膜、NbN膜、NbBN膜、NbBCN膜、AlO膜、AlOC膜、AlOCN膜、AlON膜、AlN膜、AlBN膜、AlBCN膜、MoO膜、MoOC膜、MoOCN膜、MoON膜、MoN膜、MoBN膜、MoBCN膜、WO膜、WOC膜、WOCN膜、WON膜、WN膜、WBN膜、WBCN膜等的情况下,也能够良好地适用本发明。
该情况下,例如,作为原料气体,能够使用四(二甲基氨)钛(Ti[N(CH3)2]4,简称:TDMAT)气体、四(乙基甲基氨基)铪(Hf[N(C2H5)(CH3)]4,简称:TEMAH)气体、四(乙基甲基胺基)锆(Zr[N(C2H5)(CH3)]4,简称:TEMAZ)气体、三甲基铝(Al(CH3)3,简称:TMA)气体、四氯化钛(TiCl4)气体、四氯化铪(HfCl4)气体等。
即,在形成包含半金属元素的半金属类膜和包含金属元素的金属类膜的情况下,能够良好地适用本发明。它们的成膜处理的处理顺序、处理条件能够为与上述实施方式和变形例所示的成膜处理相同的处理顺序、处理条件。在该情况下,也能够得到与上述实施方式相同的效果。
优选成膜处理中使用的配方根据处理内容而单独准备,并经由电气通信线路或外部存储装置123而预先存储在存储装置121c内。而且,优选在开始各种处理时,CPU121a从存储于存储装置121c内的多个配方中根据处理内容适当选择合理的配方。由此,能够在一台衬底处理装置中通用地、再现性良好地形成各种膜种、组成比、膜质、膜厚的薄膜。另外,能够减少操作员的负担,能够避免操作错误且迅速地开始各种处理。
上述的配方不限于新制成的情况,例如,也可以变更在衬底处理装置中既已安装的既有配方而准备。在变更配方的情况下,可以将变更后的配方经由电气通信线路或记录有该配方的记录介质安装到衬底处理装置中。另外,也可以操作既有的衬底处理装置所具备输入输出装置122,直接变更衬底处理装置中既已安装的既有配方。
Claims (10)
1.一种衬底处理装置,其特征在于,具有:
反应管,在其内部形成对衬底进行处理的处理室;
加热装置,其设在所述反应管的外部,对所述处理室进行加热;
气体供给部,其设在所述反应管内,供给对所述衬底进行处理的处理气体;和
等离子体生成部,其具备电极,所述电极以包围所述反应管的外壁整周的方式交替地设有与高频电源连接的第一电极部和接地的第二电极部,
所述等离子体生成部的相邻的所述第一电极部与所述第二电极部的电极间距离D以成为由算式1确定的值的1/2倍以上、2倍以下的范围内的值的方式进行确定,基于所述电极间距离来设置所述第一电极部和所述第二电极部,
【算式1】
其中,V为电压,f为频率,m为质量,e/m为电子的荷质比。
2.如权利要求1所述的衬底处理装置,其特征在于,
配置成相邻的所述第一电极部与所述第二电极部的电极间距离为所述反应管的壁面的厚度的1/2倍以上。
3.如权利要求1或2所述的衬底处理装置,其特征在于,
配置成相邻的所述第一电极部与所述第二电极部的中心间距离为所述衬底的周缘部与反应管的外壁之间的距离的2倍以下。
4.如权利要求1所述的衬底处理装置,其特征在于,
配置成相邻的所述第一电极部与所述第二电极部的中心间距离为10mm以上、110mm以下。
5.如权利要求1所述的衬底处理装置,其特征在于,
相邻的所述第一电极部与所述第二电极部的电极间距离D为由所述算式1确定的值。
6.如权利要求1所述的衬底处理装置,其特征在于,
还具有至少控制所述等离子体生成部的控制部,所述控制部构成为,以使等离子体中的电子的振动振幅相当于将所述第一电极部与所述第二电极部的中心间距离相连的高频电源的电力线的一半的方式,控制所述高频电源的频率。
7.如权利要求1所述的衬底处理装置,其特征在于,
所述气体供给部具有气体喷嘴,所述气体喷嘴设在所述反应管内,具有使所述处理气体以朝向所述反应管内壁供给的方式供给到所述衬底上的至少一个气体供给孔。
8.如权利要求1所述的衬底处理装置,其特征在于,
所述反应管在所述反应管的内壁上具有凹凸。
9.一种半导体器件的制造方法,其特征在于,包括:
向衬底处理装置的反应管内搬入衬底的工序,其中所述衬底处理装置具有:所述反应管,在其内部形成对所述衬底进行处理的处理室;加热装置,其设在所述反应管的外部,对所述处理室进行加热;气体供给部,其设在所述反应管内,供给对所述衬底进行处理的处理气体;和等离子体生成部,其具备电极,所述电极以包围所述反应管的外壁整周的方式交替地设有与高频电源连接的第一电极部和接地的第二电极部,所述等离子体生成部的相邻的所述第一电极部与所述第二电极部的电极间距离D以成为由算式1确定的值的1/2倍以上、2倍以下的范围内的值的方式进行确定,基于所述电极间距离来设置所述第一电极部和所述第二电极部;
向所述处理室供给所述处理气体来对所述衬底进行处理的工序;以及
从所述处理室搬出所述衬底的工序,
【算式1】
其中,V为电压,f为频率,m为质量,e/m为电子的荷质比。
10.一种衬底处理方法,其特征在于,包括:
向衬底处理装置的反应管内搬入衬底的工序,其中所述衬底处理装置具有:所述反应管,在其内部形成对所述衬底进行处理的处理室;加热装置,其设在所述反应管的外部,对所述处理室进行加热;气体供给部,其设在所述反应管内,供给对所述衬底进行处理的处理气体;和等离子体生成部,其具备电极,所述电极以包围所述反应管的外壁整周的方式交替地设有与高频电源连接的第一电极部和接地的第二电极部,所述等离子体生成部的相邻的所述第一电极部与所述第二电极部的电极间距离D以成为由算式1确定的值的1/2倍以上、2倍以下的范围内的值的方式进行确定,基于所述电极间距离来设置所述第一电极部和所述第二电极部;
向所述处理室供给所述处理气体来对所述衬底进行处理的工序;以及
从所述处理室搬出所述衬底的工序,
【算式1】
其中,V为电压,f为频率,m为质量,e/m为电子的荷质比。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-055364 | 2016-03-18 | ||
JP2016055364A JP2017168788A (ja) | 2016-03-18 | 2016-03-18 | 半導体装置の製造方法、基板処理装置およびプログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107204273A CN107204273A (zh) | 2017-09-26 |
CN107204273B true CN107204273B (zh) | 2019-04-23 |
Family
ID=59848330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710063648.7A Active CN107204273B (zh) | 2016-03-18 | 2017-02-03 | 半导体器件的制造方法、衬底处理装置及衬底处理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10774421B2 (zh) |
JP (1) | JP2017168788A (zh) |
KR (1) | KR101998463B1 (zh) |
CN (1) | CN107204273B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017159838A1 (ja) * | 2016-03-17 | 2017-09-21 | 株式会社Jcu | プラズマ生成装置 |
WO2019012797A1 (ja) * | 2017-07-13 | 2019-01-17 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6966402B2 (ja) * | 2018-09-11 | 2021-11-17 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法および基板処理装置の電極 |
JP7229266B2 (ja) * | 2018-09-20 | 2023-02-27 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、及びプログラム |
JP6807420B2 (ja) * | 2019-02-21 | 2021-01-06 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP7431210B2 (ja) * | 2021-12-28 | 2024-02-14 | 株式会社Kokusai Electric | 基板処理装置、プラズマ生成装置、半導体装置の製造方法、プラズマ生成方法及びプログラム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1455434A (zh) * | 2002-04-05 | 2003-11-12 | 株式会社日立国际电气 | 基板处理装置及反应容器 |
CN102047385A (zh) * | 2008-05-26 | 2011-05-04 | 三菱电机株式会社 | 薄膜形成装置以及半导体膜制造方法 |
CN102522310A (zh) * | 2012-01-06 | 2012-06-27 | 昆山禾信质谱技术有限公司 | 一种环形介质阻挡放电电离装置 |
CN103354202A (zh) * | 2009-01-23 | 2013-10-16 | 东京毅力科创株式会社 | 等离子处理装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02159027A (ja) | 1988-12-13 | 1990-06-19 | Tel Sagami Ltd | プラズマ処理装置 |
JP3266163B2 (ja) * | 1992-10-14 | 2002-03-18 | 東京応化工業株式会社 | プラズマ処理装置 |
JP3586197B2 (ja) * | 2000-03-23 | 2004-11-10 | シャープ株式会社 | 薄膜形成用プラズマ成膜装置 |
KR100771782B1 (ko) * | 2003-08-26 | 2007-10-30 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
JPWO2006118215A1 (ja) * | 2005-04-28 | 2008-12-18 | 株式会社日立国際電気 | 基板処理装置および半導体デバイスの製造方法 |
JP4838552B2 (ja) | 2005-08-23 | 2011-12-14 | 株式会社日立国際電気 | 基板処理装置および半導体集積回路の製造方法 |
US20080003702A1 (en) * | 2006-06-28 | 2008-01-03 | Cruse James P | Low Power RF Tuning Using Optical and Non-Reflected Power Methods |
JP5064085B2 (ja) * | 2007-04-06 | 2012-10-31 | 富山県 | プラズマ処理装置 |
JP2009064913A (ja) * | 2007-09-05 | 2009-03-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
US9089007B2 (en) * | 2012-04-27 | 2015-07-21 | Applied Materials, Inc. | Method and apparatus for substrate support with multi-zone heating |
-
2016
- 2016-03-18 JP JP2016055364A patent/JP2017168788A/ja active Pending
-
2017
- 2017-02-03 CN CN201710063648.7A patent/CN107204273B/zh active Active
- 2017-03-03 KR KR1020170027781A patent/KR101998463B1/ko active IP Right Grant
- 2017-03-14 US US15/458,294 patent/US10774421B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1455434A (zh) * | 2002-04-05 | 2003-11-12 | 株式会社日立国际电气 | 基板处理装置及反应容器 |
CN102047385A (zh) * | 2008-05-26 | 2011-05-04 | 三菱电机株式会社 | 薄膜形成装置以及半导体膜制造方法 |
CN103354202A (zh) * | 2009-01-23 | 2013-10-16 | 东京毅力科创株式会社 | 等离子处理装置 |
CN102522310A (zh) * | 2012-01-06 | 2012-06-27 | 昆山禾信质谱技术有限公司 | 一种环形介质阻挡放电电离装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20170108831A (ko) | 2017-09-27 |
US10774421B2 (en) | 2020-09-15 |
US20170268105A1 (en) | 2017-09-21 |
KR101998463B1 (ko) | 2019-07-09 |
JP2017168788A (ja) | 2017-09-21 |
CN107204273A (zh) | 2017-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107204273B (zh) | 半导体器件的制造方法、衬底处理装置及衬底处理方法 | |
KR101149380B1 (ko) | 반도체 장치의 제조 방법 및 기판 처리 장치 | |
JP7464638B2 (ja) | 基板処理装置、プラズマ生成装置、反応管、プラズマ生成方法、基板処理方法、半導体装置の製造方法およびプログラム | |
KR101661104B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 | |
JP5813303B2 (ja) | 半導体装置の製造方法、基板処理方法および基板処理装置 | |
US8410003B2 (en) | Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus | |
JP6496510B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
KR101676558B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
JP6086942B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
CN105789028B (zh) | 半导体器件的制造方法及衬底处理装置 | |
KR101509453B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 | |
CN105261552A (zh) | 半导体器件的制造方法和衬底处理装置 | |
CN105225926A (zh) | 清洁方法、半导体器件的制造方法及衬底处理装置 | |
JP6490374B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
KR102128103B1 (ko) | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 | |
JP5770892B2 (ja) | 半導体装置の製造方法、基板処理方法および基板処理装置 | |
JP6441494B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
KR20240017968A (ko) | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 | |
JP7457818B2 (ja) | 基板処理装置、半導体装置の製造方法、プログラム、補助プレートおよび基板保持具 | |
WO2021181450A1 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
WO2022054855A1 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
JP6654232B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
KR102559937B1 (ko) | 기판 처리 장치, 기판 보지부, 반도체 장치의 제조 방법 및 프로그램 | |
WO2016038744A1 (ja) | 半導体装置の製造方法、基板処理装置および記録媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181205 Address after: Tokyo, Japan, Japan Applicant after: International Electric Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Hitachi Kunisai Electric Corp. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |