CN107195704A - 一种ibc电池制备方法 - Google Patents
一种ibc电池制备方法 Download PDFInfo
- Publication number
- CN107195704A CN107195704A CN201710404026.6A CN201710404026A CN107195704A CN 107195704 A CN107195704 A CN 107195704A CN 201710404026 A CN201710404026 A CN 201710404026A CN 107195704 A CN107195704 A CN 107195704A
- Authority
- CN
- China
- Prior art keywords
- doped region
- areas
- oxide layer
- mask
- preparation methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 5
- 238000005260 corrosion Methods 0.000 claims abstract description 4
- 230000007797 corrosion Effects 0.000 claims abstract description 4
- 235000008216 herbs Nutrition 0.000 claims abstract description 4
- 210000002268 wool Anatomy 0.000 claims abstract description 4
- 239000003518 caustics Substances 0.000 claims abstract description 3
- 238000002310 reflectometry Methods 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001458 anti-acid effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种IBC电池制备方法。它包括以下步骤：A、在n型原硅片进行正面制绒，背面抛光；B、在背面形成第一掺杂区，在高温炉中通入氧气并退火，完成退火后氧化层厚度为80‑100nm；进行背面选择性分区去除氧化层；C、去胶后在第一掺杂区利用氧化层做掩膜，其余区域在添加剂辅助下，进行碱腐蚀，腐蚀完成后使第一掺杂区域氧化层厚度整体减薄；D、继续用氧化层做掩膜形成第二掺杂区，掺杂后第一掺杂区方阻维持在40‑60Ω/口左右；E、在正面形成FSF；正反两面沉积钝化层；最后在背面选择性形成p区和n区的电极。其优点是：保证分区扩散后p区、n区掺杂品质，并且对掺杂进行优化，避免了多次掩膜保护，减少了工艺步骤，光电转换效率得到了较大程度提升。
Description
技术领域
本发明涉及一种新能源光伏晶硅电池技术，具体地说是一种IBC电池制备方法。
背景技术
太阳能光伏发电具有重大的应用前景，目前光伏行业发展趋势为提效降本，而常规结构电池的效率已无较大提升空间，高效晶硅电池成为市场研发的主流。IBC为背接触背结电池，也称叉指电池。该电池最大的特点为效率高，目前多家科研单位制备的IBC电池效率已经达到了23%，有效降低了电池的温度系数，使得IBC电池与常规电池相比具有更加优越的实际发电能力，且组件外观具有较好的一致性。
该电池是在高寿命的n型硅衬底的背面形成p+、n+扩散区，正面制备金字塔绒面来增强光的吸收，同时在正面形成前表面场（FSF），并对正、反两面沉积钝化层，最后在背面选择性形成p区和n区的金半接触。在选择性分区腐蚀工艺中，有时根据工艺需求需要采用碱进行腐蚀，而目前行业内所使用掩膜浆料均为耐酸型，用碱可去除掩膜，无法满足分区腐蚀、分区掺杂的工艺要求，需要进行多次掩膜保护。
发明内容
本发明要解决的技术问题是提供一种能够减少制作工艺并提高光电转换率的IBC电池制备方法。
为了解决上述技术问题，本发明的IBC电池制备方法，包括以下步骤：
A、在n型原硅片进行正面制绒，背面抛光，正面绒面大小为1um-10um，绒面反射率为9%-13%，背面抛光反射率为30%-45%；
B、在背面形成第一掺杂区，在高温炉中通入氧气并退火，通过调节氧通量、退火温度及退火时间来调控氧化层厚度及质量，完成退火后氧化层厚度为80-100nm；然后进行背面选择性分区去除氧化层；
C、去胶后在第一掺杂区利用氧化层做掩膜，其余区域在添加剂辅助下，进行碱腐蚀，腐蚀完成后使第一掺杂区域氧化层厚度整体减薄；
D、继续用氧化层做掩膜形成第二掺杂区，掺杂后第一掺杂区方阻维持在40-60Ω/口左右；
E、在正面形成FSF；正反两面沉积钝化层；最后在背面选择性形成p区和n区的金属电极。
所述步骤B中，在高温炉中通氧气4slm退火90min，完成退火后氧化层厚度为100nm。
所述步骤C中，其余区域在质量比为1%-3%的KOH、质量比为3%-5%添加剂、温度为75-85℃的腐蚀液中腐蚀3-5min。
本发明的优点在于：在选择性分区中，利用掩膜短时间的耐酸性，通过氢氟酸选择性去除氧化层，去胶后第一掺杂区利用氧化层做掩膜，其余区域在添加剂辅助下，进行碱腐蚀，完成分区腐蚀后，继续用氧化层做掩膜形成第二掺杂区，特别是对掺杂后退火工艺进行调节控制氧化层厚度、质量等，保证了分区扩散后p区、n区掺杂品质，并且可以对掺杂进行优化，避免了多次掩膜保护，减少了工艺步骤，光电转换效率得到了较大程度提升。
具体实施方式
下面结合具体实施方式，对本发明的IBC电池制备方法作进一步详细说明。
本发明的IBC电池制备方法，包括以下步骤：
A、在n型原硅片进行正面制绒，背面抛光，正面绒面大小为4um，绒面反射率为10%，背面抛光反射率为45%；
B、在背面形成第一掺杂区，通过调节氧通量、退火温度及退火时间来调控氧化层厚度及质量，其本实施例中，在高温炉中通氧气4slm退火90min，其退火温度为常规温度，完成退火后使其形成厚度为80-100nm，质量致密的氧化膜层，然后进行背面选择性分区去除氧化层，利用掩膜短时间的耐酸性，通过氢氟酸选择性去除氧化层；
C、去胶后在第一掺杂区利用氧化层做掩膜，其余区域在碱质量比为1.5%、添加剂质量比为3%、温度为80℃的腐蚀液中反应300s，腐蚀完成后使第一掺杂区域氧化层厚度整体减薄，第一掺杂区域氧化层较为完整；
D、继续用氧化层做掩膜形成第二掺杂区，掺杂后第一掺杂区方阻维持在55Ω/口左右，氧化层掩膜可以彻底阻挡第二掺杂元素向第一掺杂区扩散；
E、在正面形成FSF；正反两面沉积钝化层；最后在背面选择性形成p区和n区的金属电极。
经过实践证明，采用该工艺方法，电性能测试结果显示开压提升4.8%，填充提升8%左右，短路电流密度提升高达15%，最终光电转换效率得到了较大程度提升。
Claims (3)
1.一种IBC电池制备方法，包括以下步骤：
A、在n型原硅片进行正面制绒，背面抛光，正面绒面大小为1um-10um，绒面反射率为9%-13%，背面抛光反射率为30%-45%；
B、在背面形成第一掺杂区，在高温炉中通入氧气并退火，通过调节氧通量、退火温度及退火时间来调控氧化层厚度及质量，完成退火后氧化层厚度为80-100nm；然后进行背面选择性分区去除氧化层；
C、去胶后在第一掺杂区利用氧化层做掩膜，其余区域在添加剂辅助下，进行碱腐蚀，腐蚀完成后使第一掺杂区域氧化层厚度整体减薄；
D、继续用氧化层做掩膜形成第二掺杂区，掺杂后第一掺杂区方阻维持在40-60Ω/口左右；
E、在正面形成FSF；正反两面沉积钝化层；最后在背面选择性形成p区和n区的金属电极。
2.按照权利要求1所述的IBC电池制备方法，其特征在于：所述步骤B中，在高温炉中通氧气4slm退火90min，完成退火后氧化层厚度为100nm。
3.按照权利要求1所述的IBC电池制备方法，其特征在于：所述步骤C中，其余区域在质量比为1%-3%的KOH、质量比为3%-5%添加剂、温度为75-85℃的腐蚀液中腐蚀3-5min。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404026.6A CN107195704A (zh) | 2017-06-01 | 2017-06-01 | 一种ibc电池制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404026.6A CN107195704A (zh) | 2017-06-01 | 2017-06-01 | 一种ibc电池制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107195704A true CN107195704A (zh) | 2017-09-22 |
Family
ID=59876876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710404026.6A Pending CN107195704A (zh) | 2017-06-01 | 2017-06-01 | 一种ibc电池制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107195704A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403537A (zh) * | 2018-12-27 | 2020-07-10 | 江苏日托光伏科技股份有限公司 | 一种基于碱抛的选择性发射极电池正面保护方法 |
| CN114823973A (zh) * | 2022-04-20 | 2022-07-29 | 通威太阳能(眉山)有限公司 | 一种p型背接触太阳电池及其制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (zh) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 背接触太阳能电池的制造方法 |
| JP2010161310A (ja) * | 2009-01-09 | 2010-07-22 | Sharp Corp | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 |
| CN102610686A (zh) * | 2012-03-28 | 2012-07-25 | 星尚光伏科技（苏州）有限公司 | 一种背接触晶体硅太阳能电池及其制作工艺 |
| KR20120113548A (ko) * | 2011-04-05 | 2012-10-15 | 주식회사 엘지화학 | 식각 마스크 페이스트 및 이를 이용한 후면전극형 태양전지 |
| CN104218123A (zh) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | 基于离子注入工艺的n型IBC硅太阳能电池制作方法 |
| CN105609571A (zh) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | Ibc太阳电池及其制作方法 |
-
2017
- 2017-06-01 CN CN201710404026.6A patent/CN107195704A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (zh) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 背接触太阳能电池的制造方法 |
| JP2010161310A (ja) * | 2009-01-09 | 2010-07-22 | Sharp Corp | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 |
| KR20120113548A (ko) * | 2011-04-05 | 2012-10-15 | 주식회사 엘지화학 | 식각 마스크 페이스트 및 이를 이용한 후면전극형 태양전지 |
| CN102610686A (zh) * | 2012-03-28 | 2012-07-25 | 星尚光伏科技（苏州）有限公司 | 一种背接触晶体硅太阳能电池及其制作工艺 |
| CN104218123A (zh) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | 基于离子注入工艺的n型IBC硅太阳能电池制作方法 |
| CN105609571A (zh) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | Ibc太阳电池及其制作方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403537A (zh) * | 2018-12-27 | 2020-07-10 | 江苏日托光伏科技股份有限公司 | 一种基于碱抛的选择性发射极电池正面保护方法 |
| CN111403537B (zh) * | 2018-12-27 | 2021-05-25 | 江苏日托光伏科技股份有限公司 | 一种基于碱抛的选择性发射极电池正面保护方法 |
| CN114823973A (zh) * | 2022-04-20 | 2022-07-29 | 通威太阳能(眉山)有限公司 | 一种p型背接触太阳电池及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6666438B2 (ja) | 局部バックコンタクト太陽電池の製造方法 | |
| EP3958330A1 (en) | Method for passivating silicon-based semiconductor device, and silicon-based semiconductor device | |
| CN105226112B (zh) | 一种高效晶硅太阳能电池的制备方法 | |
| CN106992229A (zh) | 一种perc电池背面钝化工艺 | |
| CN109686816B (zh) | 钝化接触n型太阳电池的制备方法 | |
| JP5795125B2 (ja) | 太陽電池シート及びその熱処理プロセス | |
| CN102437246B (zh) | 一种晶体硅太阳能电池的制备方法 | |
| CN109346536A (zh) | 一种接触钝化晶体硅太阳能电池结构及制备方法 | |
| CN101179100A (zh) | 一种大面积低弯曲超薄型双面照光太阳能电池制作方法 | |
| CN108666393A (zh) | 太阳能电池的制备方法及太阳能电池 | |
| WO2010125861A1 (ja) | 裏面電極型太陽電池およびその製造方法 | |
| CN102709401B (zh) | 一种n型太阳能电池制作方法 | |
| CN101872806A (zh) | 太阳电池硅片的制绒方法及制造太阳电池的方法 | |
| CN103022265B (zh) | 太阳能电池片及其扩散方法 | |
| CN102629643A (zh) | 高方阻太阳能电池制作方法 | |
| CN206619599U (zh) | 一种双面钝化太阳能电池 | |
| CN208352305U (zh) | 一种p型背接触太阳电池 | |
| CN111816714A (zh) | 一种激光硼掺杂背钝化太阳能电池及其制备方法 | |
| CN102569502A (zh) | 一种湿法刻蚀工艺 | |
| CN111477720A (zh) | 一种钝化接触的n型背结太阳能电池及其制备方法 | |
| JPWO2014174613A1 (ja) | 太陽電池の製造方法 | |
| CN107195704A (zh) | 一种ibc电池制备方法 | |
| CN102130213A (zh) | 具有背面钝化的选择性发射结硅太阳能电池的制备方法 | |
| CN104134706B (zh) | 一种石墨烯硅太阳电池及其制作方法 | |
| CN110391319B (zh) | 一种抗pid效应的高效黑硅电池片的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 032100 economic and Technological Development Zone No. 1, Wenshui County, Lvliang, Shanxi. Applicant after: JINNENG CLEAN ENERGY TECHNOLOGY LTD. Address before: 032100 economic and Technological Development Zone No. 1, Wenshui County, Lvliang, Shanxi. Applicant before: JINENG CLEAN ENERGY TECHNOLOGY LTD. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170922 |
|
| RJ01 | Rejection of invention patent application after publication |