CN107195698A - A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface - Google Patents
A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface Download PDFInfo
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- CN107195698A CN107195698A CN201710405484.1A CN201710405484A CN107195698A CN 107195698 A CN107195698 A CN 107195698A CN 201710405484 A CN201710405484 A CN 201710405484A CN 107195698 A CN107195698 A CN 107195698A
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- back surface
- antimony selenide
- solar cells
- film solar
- film
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- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title abstract description 11
- 230000008569 process Effects 0.000 title description 8
- 239000010408 film Substances 0.000 claims abstract description 30
- 230000009466 transformation Effects 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 230000005693 optoelectronics Effects 0.000 claims abstract description 3
- 239000007864 aqueous solution Substances 0.000 claims description 18
- 230000007547 defect Effects 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 8
- 238000011161 development Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 antimony selenide Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- GNZJTRGEKSBAAS-UHFFFAOYSA-N selanylideneantimony;selenium Chemical compound [Se].[Sb]=[Se].[Sb]=[Se] GNZJTRGEKSBAAS-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of method of antimony selenide thin-film solar cells back surface processing, antimony selenide hull cell is placed in thermal station；Then by ErCl3Solution drips to the back surface of selenizing antimony battery, and it is covered back surface, stands a period of time；Finally, battery device is placed on film applicator and cleaned using deionized water, and dried, obtain the antimony selenide thin-film solar cells handled by back surface.This method can effectively reduce back electrode contact resistance, promote the collection of photo-generated carrier, improve fill factor, curve factor, further improve the photoelectric transformation efficiency of antimony selenide thin-film solar cells.The simple and effective opto-electronic conversion performance for improving the back contacts characteristic of selenizing antimony battery, and then improving battery of the present invention, technical support is provided for the development of hull cell.
Description
Technical field
The present invention relates to photovoltaic device designs preparing technical field, more particularly to a kind of antimony selenide thin-film solar cells
The deactivating process for the treatment of of back surface, belongs to technical field of solar batteries.
Background technology
Solar energy power generating belongs to the maximum green power generation energy project of national encouragement dynamics." 13 " photovoltaic is planned
Point out to continue to keep very fast development, give priority to the solar cell of efficient, inexpensive, light, great industrial competitiveness.Closely
Come, research simple, the with low cost and efficient novel thin film solar cell of green non-poisonous, preparation technology becomes focus.Ⅴ-
VI compounds of group antimony selenide (Sb2Se3) material is because with the suitable (~1.17eV, close to silicon 1.12eV, theoretical single-unit of energy gap
Sb2Se3The efficiency of battery is up to more than 30%), the big (visible region of absorptivity>105cm-1, the light absorbs system of amorphous silicon membrane
Number about 104cm-1), thing phase simple and stable, can be achieved compared with low temperature (<300 DEG C) high-quality growth, low in raw material price, reserves are rich
The advantage such as rich, green non-poisonous, and receive much concern.How to improve the photoelectric transformation efficiency of antimony selenide thin-film solar cells becomes
Emphasis.
The research of current antimony selenide thin-film solar cells remains in primary stage, prepared antimony selenide hull cell
Photoelectric transformation efficiency it is low, it is a unique chain material to be primarily due to antimony selenide, and the interchain transmission of carrier is difficult, material
Expect that resistance is big, the low problem of doping concentration causes that the photogenerated current of antimony selenide hull cell is smaller, and fill factor, curve factor is low.
The content of the invention
For existing antimony selenide battery preparation technology and Improvement requirement, the invention provides a kind of antimony selenide thin film solar
The deactivating process for the treatment of of the back surface of battery, by using ErCl3The aqueous solution is passivated processing to its back surface, to reduce the back of the body
The contact resistance of electrode, promotes the collection of photo-generated carrier, improves fill factor, curve factor, improves the back of the body of antimony selenide thin-film solar cells
The collection efficiency of electrode, and then the photoelectric transformation efficiency of battery is improved, thus solve the antimony selenide hull cell of prior art
Photogenerated current is smaller, and fill factor, curve factor is low, the low technical problem of photoelectric transformation efficiency.
The present invention provides a kind of processing method of antimony selenide thin-film solar cells back surface, using ErCl3The aqueous solution pair
The back surface of antimony selenide thin-film solar cells is handled, and reduces contact electricity of the back surface of the solar cell with back electrode
Resistance, increases the back electrode to the collection efficiency of photo-generated carrier, improves the opto-electronic conversion of the antimony selenide thin-film solar cells
Efficiency；The back surface is selenizing Sb film.
Preferably, the ErCl3Er ions in the aqueous solution can be passivated the surface of the back surface of the solar cell
Defect and grain boundary defects, reduce defect concentration.
Preferably, the processing method can make the photoelectric transformation efficiency of the antimony selenide thin-film solar cells improve 1%
~2%.
Preferably, described processing method, it comprises the following steps：
(1) antimony selenide thin-film solar cells is placed in thermal station；
(2) by ErCl3The aqueous solution is added drop-wise to the back surface of the antimony selenide thin-film solar cells, it is covered the back of the body
Surface, and stand, make the ErCl3Er ions in the aqueous solution penetrate into the back surface, and the back surface is selenizing Sb film；
(3) cleaned using deionized water, the antimony selenide thin-film solar cells after being handled after drying.
Preferably, the temperature of step (1) described thermal station is 60 DEG C~180 DEG C.
Preferably, the temperature of step (1) described thermal station is 60 DEG C~100 DEG C.
Preferably, step (2) ErCl3The concentration range of the aqueous solution is 0.05M~0.5M.
Preferably, step (2) described time of repose is 10min~30min.
Preferably, step (3) cleaning is carried out on film applicator.
Preferably, step (3) described drying means is drying.
In general, by the contemplated above technical scheme of the present invention compared with prior art, it can obtain down and show
Beneficial effect：
(1) present invention uses ErCl3The aqueous solution carries out back surface passivation processing, Er ion energy to antimony selenide solar cell
Enough that antimony selenide film surface defects and grain boundary defects are passivated, filling antimony selenide surface and grain boundary defects can be effective
The contact potential between antimony selenide surface and back electrode is reduced, increase back electrode is to the collection efficiency of photo-generated carrier, Jin Erti
The photoelectric transformation efficiency of high selenizing antimony battery.
(2) deactivating process for the treatment of of antimony selenide thin-film solar cells back surface of the invention is simple and easy to apply, effectively changes
The back contacts characteristic of selenizing antimony battery has been apt to it, the photoelectric transformation efficiency of battery is significantly improved.
Brief description of the drawings
Fig. 1 is the Kelvin probe surface potential Mapping of the antimony selenide film surface obtained by the embodiment of the present invention 3
Figure：(a) before processing；(b) after handling；
Fig. 2 is the current density voltage curve of antimony selenide hull cell before and after the processing obtained by the embodiment of the present invention 3
Figure.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments and accompanying drawing, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
The deactivating process for the treatment of for the antimony selenide thin-film solar cells back surface that the present invention is provided, using ErCl3The aqueous solution
Processing is passivated to the selenizing Sb film of antimony selenide thin-film solar cells back surface, passes through Er ion pair selenizing Sb film tables
Planar defect and grain boundary defects are passivated, filling antimony selenide film surface and grain boundary defects, reduce the contact resistance of back electrode, are promoted
Enter the collection of photo-generated carrier, the fill factor, curve factor of battery is improved, so as to improve the antimony selenide hull cell photoelectric transformation efficiency.It is logical
The deactivating process for the treatment of is crossed, the antimony selenide hull cell photoelectric transformation efficiency can improve about 1%~2%.
Specifically, the deactivating process for the treatment of, comprises the following steps：
(1) antimony selenide thin-film solar cells is placed in 60 DEG C~180 DEG C, preferably 60 DEG C~100 DEG C of thermal station；
(2) by 0.05M~0.5M ErCl3The aqueous solution drips to the back surface of the antimony selenide hull cell, makes its covering back of the body
Surface, and 10min~30min is stood, Er ions is penetrated into selenizing Sb film, complete blunt to the defect of film surface and crystal boundary
Change.
(3) solar film battery is placed on film applicator and cleaned using deionized water, Passivation Treatment is obtained after drying
Antimony selenide thin-film solar cells afterwards, what cleaning can be evenly removes the ErCl of film surface residual on spin coater2It is molten
Liquid.
Antimony selenide thin-film cell structure involved in the present invention is tin indium oxide (ITO)/cadmium sulfide/antimony selenide/gold electrode,
Processing method is before evaporation gold electrode (back electrode), to the selenium of tin indium oxide (ITO)/cadmium sulfide/antimony selenide structure battery
Change Sb film surface (back surface) to be handled, reduce the defect of antimony selenide film surface and crystal boundary, improve film quality, so that
The contact berrier of selenizing Sb film and gold electrode (back electrode) is reduced, the contact resistance of the back electrode of solar cell is reduced, increased
Plus to the utilization ratio of photo-generated carrier, improve the photoelectric transformation efficiency of the antimony selenide hull cell.
Embodiment 1：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 60 DEG C；
(2) and then by 0.5M ErCl3The aqueous solution drips to the back surface of selenizing antimony battery, and it is covered back surface, quiet
Put 30min；
(3) battery device is placed on film applicator and cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation, obtains antimony selenide thin-film solar cells, and it is carried out under standard sunshine
Current-voltage is tested.
Embodiment 2：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 120 DEG C；
(2) and then by 0.2M ErCl3The aqueous solution drips to the back surface of selenizing antimony battery, and it is covered back surface, quiet
Put 20min；
(3) battery device is placed on film applicator and cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation, obtains antimony selenide thin-film solar cells, and it is carried out under standard sunshine
Current-voltage is tested.
Embodiment 3：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 160 DEG C；
(2) and then by 0.05M ErCl3The aqueous solution drips to the back surface of selenizing antimony battery, and it is covered back surface, quiet
Put 10min；
(3) battery device is placed on film applicator and cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation, obtains antimony selenide thin-film solar cells, and it has been carried out surface potential and
Current-voltage is tested under standard sunshine.
Kelvin probe potential Mapping is schemed as shown in figure 1, Fig. 1 (a) is the test result of before processing, and Fig. 1 (b) is
ErCl3Test result after solution processing, as a result shows that the potential on antimony selenide surface after treatment is uprised, so as to reduce selenium
Change the contact berrier of antimony and back electrode, and the alternating temperature conductance experiment test by being carried out to selenizing Sb film, it was demonstrated that in film
Defect state is reduced, and improves film quality, is conducive to increasing separation and the collection efficiency of photo-generated carrier.
The test result of current-voltage is as shown in Fig. 2 the short-circuit current density of battery is by 26.86mA/cm after processing2Carry
Height has arrived 29.44mA/cm2, fill factor, curve factor brought up to 56.56% by 53.76%, and photoelectric transformation efficiency is brought up to by 5.43%
6.44%.
As can be seen here, the antimony selenide thin-film solar cells obtained is handled by the above method and utilizes ErCl3Solution is carried on the back to it
Surface is passivated processing, reduces back contacts potential, can effectively facilitate the collection of photo-generated carrier, improves the filling of battery
The factor, the photoelectric transformation efficiency for further raising antimony selenide thin-film solar cells provides technical support.
Embodiment 4：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 100 DEG C；
(2) and then by 0.05M ErCl3The aqueous solution drips to the back surface of selenizing antimony battery, and it is covered back surface, quiet
Put 10min；
(3) battery device is placed on film applicator and cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation, obtains antimony selenide thin-film solar cells, and it has been carried out surface potential and
Current-voltage is tested under standard sunshine.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (9)
1. a kind of processing method of antimony selenide thin-film solar cells back surface, it is characterised in that use ErCl3The aqueous solution is to selenium
The back surface for changing Sb film solar cell is handled, and reduces contact electricity of the back surface of the solar cell with back electrode
Resistance, increases the back electrode to the collection efficiency of photo-generated carrier, improves the opto-electronic conversion of the antimony selenide thin-film solar cells
Efficiency；The back surface is selenizing Sb film.
2. processing method as claimed in claim 1, it is characterised in that the ErCl3Er ions in the aqueous solution can be passivated institute
The surface defect and grain boundary defects of the back surface of solar cell are stated, reduces defect concentration.
3. processing method as claimed in claim 1, it is characterised in that the processing method can make the selenizing Sb film sun
The photoelectric transformation efficiency of energy battery improves 1%~2%.
4. processing method as claimed in claim 1, it is characterised in that it comprises the following steps：
(1) antimony selenide thin-film solar cells is placed in thermal station；
(2) by ErCl3The aqueous solution is added drop-wise to the back surface of the antimony selenide thin-film solar cells, it is covered the back surface,
And stand, make the ErCl3Er ions in the aqueous solution penetrate into the back surface, and the back surface is selenizing Sb film；
(3) cleaned using deionized water, the antimony selenide thin-film solar cells after being handled after drying.
5. processing method as described in claim 4, it is characterised in that the temperature of step (1) described thermal station is 60 DEG C~180
DEG C, preferably 60 DEG C~100 DEG C.
6. processing method as described in claim 4, it is characterised in that step (2) described ErCl3The concentration range of the aqueous solution
For 0.05M~0.5M.
7. processing method as described in claim 4, it is characterised in that step (2) described time of repose be 10min~
30min。
8. processing method as described in claim 4, it is characterised in that step (3) cleaning is carried out on film applicator.
9. processing method as described in claim 4, it is characterised in that step (3) described drying means is drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710405484.1A CN107195698B (en) | 2017-06-01 | 2017-06-01 | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710405484.1A CN107195698B (en) | 2017-06-01 | 2017-06-01 | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface |
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| Publication Number | Publication Date |
|---|---|
| CN107195698A true CN107195698A (en) | 2017-09-22 |
| CN107195698B CN107195698B (en) | 2018-07-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447946A (en) * | 2018-04-20 | 2018-08-24 | 华中科技大学 | A kind of flexibility antimony selenide thin-film solar cells and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105556694A (en) * | 2013-09-25 | 2016-05-04 | 积水化学工业株式会社 | Thin film solar cell, semiconductor thin film and coating liquid for forming semiconductor |
-
2017
- 2017-06-01 CN CN201710405484.1A patent/CN107195698B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105556694A (en) * | 2013-09-25 | 2016-05-04 | 积水化学工业株式会社 | Thin film solar cell, semiconductor thin film and coating liquid for forming semiconductor |
Non-Patent Citations (2)
| Title |
|---|
| ABDOLALI ALEMI ETAL: "Synthesis and characterization of new LnxSb2-xSe3 (Ln: Yb3+, Er3+) nanoflowers and their physical properties", 《PHYSICA B》 * |
| YOUNES HANIFEHPOUR ETAL: "Lu3+/Yb3+ and Lu3+/Er3+ co-doped antimony selenide nanomaterials: synthesis,characterization, and electrical, thermoelectrical,and optical properties", 《NANOSCALE RESEARCH LETTERS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447946A (en) * | 2018-04-20 | 2018-08-24 | 华中科技大学 | A kind of flexibility antimony selenide thin-film solar cells and preparation method thereof |
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