CN107195526A - A kind of method rubbed between the part for reducing board - Google Patents

A kind of method rubbed between the part for reducing board Download PDF

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Publication number
CN107195526A
CN107195526A CN201710428635.5A CN201710428635A CN107195526A CN 107195526 A CN107195526 A CN 107195526A CN 201710428635 A CN201710428635 A CN 201710428635A CN 107195526 A CN107195526 A CN 107195526A
Authority
CN
China
Prior art keywords
gas
hole
ring
cavity
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710428635.5A
Other languages
Chinese (zh)
Inventor
冯翔
冯俊杰
朱骏
张旭升
刘东升
彭国发
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huali Microelectronics Corp
Original Assignee
Shanghai Huali Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huali Microelectronics Corp filed Critical Shanghai Huali Microelectronics Corp
Priority to CN201710428635.5A priority Critical patent/CN107195526A/en
Publication of CN107195526A publication Critical patent/CN107195526A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32513Sealing means, e.g. sealing between different parts of the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to a kind of field of semiconductor devices, more particularly to a kind of method for reducing the friction between semiconductor equipment.A kind of method rubbed between part for reducing board, applied to the board including gas ejector and double gas bands, the gas ejector has sets an O-ring on hollow circular hole, the inwall of described hole;Described pair of gas band has the circular cavity of protrusion, and the diameter of the cavity is not more than the diameter of the O-ring, so that the cavity is inserted into described hole through the O-ring.The present invention carries out phase mutual friction, so as to improve service life when being inserted into the cavity for avoiding double gas bands in hole by setting an O-ring on the inwall of the hole of gas ejector with hole.

Description

A kind of method rubbed between the part for reducing board
Technical field
The present invention relates to a kind of field of semiconductor devices, more particularly to a kind of side for reducing the friction between semiconductor equipment Method.
Background technology
In semiconductor dry etching equipment, Kiyo process cavities make gas evenly into chamber using gas distributing system Body.Wherein board side is mainly included with lower component:1) shutoff valve;2) segment gas pipeline;3) double gas bands;4) gas ejector. Facilities Engineer can involve following action in daily maintenance process of beginning to speak:The circular cavity of double gas bands is inserted in segment gas After body pipeline, the hollow hole of alignment insertion gas ejector, then with screw locking, to fasten double gas bands and gas injection Device.In this alignment procedures, if due to lacking experience, repeatedly double gas bands are not aligned for insertion into gas ejector Empty hole, then can cause the junction of double gas bands and gas ejector to produce multiple friction, and leave brown impression, Ke Nengzao Into product center defect, more serious possibility damages part.
The content of the invention
For above mentioned problem present in current gas ejector alignment procedures, the present invention provides a kind of portion for reducing board The method rubbed between part.
The technical proposal for solving the technical problem of the invention is:
A kind of method rubbed between the part for reducing board, applied to the board including gas ejector and double gas bands,
The gas ejector has sets an O-ring on hollow circular hole, the inwall of described hole;
Described pair of gas band has the circular cavity of protrusion, and the diameter of the cavity is not more than the diameter of the O-ring, with The cavity is set to be inserted into through the O-ring in described hole.
It is preferred that, the gas ejector is made up of quartz.
It is preferred that, described pair of gas band is made up of Teflon.
It is preferred that, the o-ring is made of perfluor material.
It is preferred that, the O-ring is located at the opening of described hole.
It is preferred that, the gas ejector has two holes being provided separately.
It is preferred that, described pair of gas band has two cavitys being provided separately, and the position and the position one of hole of cavity One correspondence.
Beneficial effects of the present invention:The present invention on the inwall of the hole of gas ejector by setting an O-ring, to keep away Phase mutual friction is carried out with hole when the cavity for exempting from double gas bands is inserted into hole, so as to improve service life.
Brief description of the drawings
Fig. 1 is the structural representation of embodiments of the invention;
Fig. 2 is the structural representation of the hole as viewed from Fig. 1 AB ends.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
The invention provides a kind of method rubbed between part for reducing board, applied to including as shown in Figure 1-2 The board of gas ejector 2 and double gas bands 1,
Gas ejector 2 has sets an O-ring 22 on hollow circular hole 21, the inwall of hole 21;
Double gas bands 1 have the circular cavity 11 of protrusion, and the diameter of cavity 11 is not more than the diameter of O-ring 22, so that chamber Body 11 is inserted into hole 21 through O-ring 22.
Board in embodiments of the invention can be Lam Kiyo boards, and the board mainly includes two parts:It is located at The gas ejector 2 on Fig. 1 right side and double gas bands 1 in left side.Wherein, gas ejector 2 has a circular hole 21, double gas There is a circular cavity 11 with 1.By setting an O-ring 22 in hole 21 in gas ejector 2, and cavity 11 is straight Footpath is not more than the diameter of O-ring 22, as shown in Figure 2 so that when cavity 11 is inserted into hole 21, be not directly with hole 21 What inner surface was in contact, but intermediary is used as by the O-ring 22, so as to avoid gas ejector 2 from being aligned with double gas bands 1 When produce phase mutual friction, cause the abrasion of all parts.
The preferred embodiment of the present invention, gas ejector 2 is made up of quartz.
The preferred embodiment of the present invention, double gas bands 1 are made up of Teflon.
The preferred embodiment of the present invention, o-ring is made of perfluor material.
The preferred embodiment of the present invention, O-ring 22 is located at the opening of hole 21.
The preferred embodiment of the present invention, gas ejector 2 has two holes 21 being provided separately.
The preferred embodiment of the present invention, double gas bands 1 have two cavitys 11 being provided separately, and the position of cavity 11 Corresponded with the position of hole 21.
Preferred embodiments of the present invention are the foregoing is only, embodiments of the present invention and protection model is not thereby limited Enclose, to those skilled in the art, should can appreciate that what all utilization description of the invention and diagramatic content were made Scheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.

Claims (7)

1. a kind of method rubbed between part for reducing board, it is characterised in that applied to including gas ejector and double gas The board of band,
The gas ejector has sets an O-ring on hollow circular hole, the inwall of described hole;
Described pair of gas band has the circular cavity of protrusion, and the diameter of the cavity is not more than the diameter of the O-ring, so that institute Cavity is stated to be inserted into described hole through the O-ring.
2. the method rubbed between the part according to claim 1 for reducing board, it is characterised in that the gas injection Device is made up of quartz.
3. the method that rubs between the part according to claim 1 for reducing board, it is characterised in that described pair of gas band by Teflon is made.
4. the method rubbed between the part according to claim 1 for reducing board, it is characterised in that the o-ring is adopted It is made of perfluor material.
5. the method rubbed between the part according to claim 1 for reducing board, it is characterised in that the O-ring position At the opening of described hole.
6. the method rubbed between the part according to claim 1 for reducing board, it is characterised in that the gas injection Utensil has two holes being provided separately.
7. the method rubbed between the part according to claim 6 for reducing board, it is characterised in that described pair of gas belt There are two cavitys being provided separately, and the position of cavity and the position of hole are corresponded.
CN201710428635.5A 2017-06-08 2017-06-08 A kind of method rubbed between the part for reducing board Pending CN107195526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710428635.5A CN107195526A (en) 2017-06-08 2017-06-08 A kind of method rubbed between the part for reducing board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710428635.5A CN107195526A (en) 2017-06-08 2017-06-08 A kind of method rubbed between the part for reducing board

Publications (1)

Publication Number Publication Date
CN107195526A true CN107195526A (en) 2017-09-22

Family

ID=59876055

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710428635.5A Pending CN107195526A (en) 2017-06-08 2017-06-08 A kind of method rubbed between the part for reducing board

Country Status (1)

Country Link
CN (1) CN107195526A (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101529997A (en) * 2006-10-06 2009-09-09 朗姆研究公司 Methods of and apparatus for accessing a process chamber using a dual zone gas injector wth improved optical access
US7685965B1 (en) * 2006-01-26 2010-03-30 Lam Research Corporation Apparatus for shielding process chamber port
CN102127752A (en) * 2007-01-12 2011-07-20 威科仪器有限公司 Gas treatment systems
CN102154628A (en) * 2004-08-02 2011-08-17 维高仪器股份有限公司 Multi-gas distribution injector for chemical vapor deposition reactors
CN202855717U (en) * 2009-09-10 2013-04-03 朗姆研究公司 Replaceable upper chamber part of plasma reaction chamber
US20130146095A1 (en) * 2011-12-07 2013-06-13 Lam Research Corporation System and method for cleaning gas injectors
CN104112639A (en) * 2013-04-22 2014-10-22 中微半导体设备(上海)有限公司 Plasma reaction chamber for realizing fast reaction gas switching and method thereof
CN104233231A (en) * 2013-06-14 2014-12-24 东京毅力科创株式会社 Gas processing apparatus
CN104541061A (en) * 2012-07-19 2015-04-22 阿迪克森真空产品公司 Method and device for pumping of a process chamber
CN104752266A (en) * 2013-12-31 2015-07-01 中微半导体设备(上海)有限公司 Through-silicon-via etching device
CN105225912A (en) * 2014-06-27 2016-01-06 朗姆研究公司 The ceramic spray head of center gas injector is comprised in semiconductor wafer processing apparatus
US20160002776A1 (en) * 2013-02-21 2016-01-07 Altatech Semiconductor Chemical vapor deposition device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102154628A (en) * 2004-08-02 2011-08-17 维高仪器股份有限公司 Multi-gas distribution injector for chemical vapor deposition reactors
US7685965B1 (en) * 2006-01-26 2010-03-30 Lam Research Corporation Apparatus for shielding process chamber port
CN101529997A (en) * 2006-10-06 2009-09-09 朗姆研究公司 Methods of and apparatus for accessing a process chamber using a dual zone gas injector wth improved optical access
CN102127752A (en) * 2007-01-12 2011-07-20 威科仪器有限公司 Gas treatment systems
CN203225233U (en) * 2009-09-10 2013-10-02 朗姆研究公司 Ceramic side gas injector
CN202855717U (en) * 2009-09-10 2013-04-03 朗姆研究公司 Replaceable upper chamber part of plasma reaction chamber
US20130146095A1 (en) * 2011-12-07 2013-06-13 Lam Research Corporation System and method for cleaning gas injectors
CN104541061A (en) * 2012-07-19 2015-04-22 阿迪克森真空产品公司 Method and device for pumping of a process chamber
US20160002776A1 (en) * 2013-02-21 2016-01-07 Altatech Semiconductor Chemical vapor deposition device
CN104112639A (en) * 2013-04-22 2014-10-22 中微半导体设备(上海)有限公司 Plasma reaction chamber for realizing fast reaction gas switching and method thereof
CN104233231A (en) * 2013-06-14 2014-12-24 东京毅力科创株式会社 Gas processing apparatus
CN104752266A (en) * 2013-12-31 2015-07-01 中微半导体设备(上海)有限公司 Through-silicon-via etching device
CN105225912A (en) * 2014-06-27 2016-01-06 朗姆研究公司 The ceramic spray head of center gas injector is comprised in semiconductor wafer processing apparatus

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SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
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RJ01 Rejection of invention patent application after publication

Application publication date: 20170922