CN107193162A - A kind of array base palte and manufacture method - Google Patents
A kind of array base palte and manufacture method Download PDFInfo
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- CN107193162A CN107193162A CN201710639731.4A CN201710639731A CN107193162A CN 107193162 A CN107193162 A CN 107193162A CN 201710639731 A CN201710639731 A CN 201710639731A CN 107193162 A CN107193162 A CN 107193162A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13396—Spacers having different sizes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Filters (AREA)
- Liquid Crystal (AREA)
Abstract
A kind of array base palte, including：Secondary spacer material and the main spacer material for being arranged on secondary spacer material surrounding, the main spacer material and secondary spacer material include thin film transistor (TFT), the first protective layer, color blocking layer, flatness layer and the black interval layer being successively set on from the bottom to top on substrate；The color blocking layer includes red color resistance layer, blue color blocking layer and green color blocking layer.Terrain Elevation required for foring main spacer material and secondary spacer material by the stacking of lower floor's color blocking is poor, the difference in height of main spacer material and secondary spacer material is formed without black interval layer itself, the development difficulty of the black interval layer material largely reduced, while the stability of the technique also ensured.
Description
Technical field
The present invention is a kind of array base palte and manufacture method in display technology field.
Background technology
With the development of Display Technique, the plane such as liquid crystal display (Liquid Crystal Display, LCD) display dress
Put because having the advantages that high image quality, power saving, fuselage is thin and has a wide range of application, widely should as the main flow in display device
For the various consumer electronics productions such as mobile phone, TV, personal digital assistant, digital camera, notebook computer, desktop computer
Product.
More preferable viewing effect such as flexible displays are pursued, and more inexpensive display panel turns into technological development personnel
Persevering research topic.BM-Less technologies in the present invention be based in COA technologies by BM (black matrix, it is black
Colour moment battle array) collect with PS (photo spacer, photoresistance gap) together in same material (black interval layer, Black Photo
) and same processing procedure completes and designs a kind of technology on array base palte Spacer；Compared with traditional liquid crystal Display Technique, will be black
Colour moment battle array, red color resistance, green color blocking, blue color blocking and spacer material are all designed in array base palte side, and are had in upper substrate
One of transparency conducting layer, so can not only avoid in group processing procedure due in the error to group precision or curved-surface display technology
The exposure come due to the translation carry that panel bending is caused；People having a common goal's material and processing procedure are more importantly saved, shortens productive temp,
Reduce product cost.
Traditional black interval layer technology refers to that black interval layer material is by exposure process, using Multi-
Tone Mask (intermediate tone mask version) technology carries out photoetching process, and wherein Multi-Tone Mask are one and possess different printing opacities
The mask of rate.To black interval layer material three different thickness differences of formation, main spacer material (main has been each served as
PS the function of)/pair spacer material (sub PS)/black matrix" (BM).But in actual development, mainly encounter following ask
Topic：1st, black interval layer material shaded effect is not good, 2, material formation main spacer material/pair spacer material/black matrix" it is highly equal
Even property is poor, causes yield low, production cost rise；3rd, due to material contacted with liquid crystal between only a thin layer of PI
Layer, can escape into liquid crystal molecule because of the small-molecule substance that ambient light, heat are separated out to the influence of material, cause final display
Occur in that image retention (Image sticking) and other trust sex chromosome mosaicisms.4th, due to form main spacer material/pair spacer material/black
The difference in height of colour moment battle array, it is desirable to the speed that the developed liquid of material corrodes is reduced in developing process, so, when extending development
Between, causing productive temp (Tact time), the time is elongated and influences production capacity.
Usual black interval layer technology is with reference to COA (Color Filter on Array) technologies and by black interval layer
Design of material can avoid light leak on array base palte, so and improve to a group precision, as shown in figure 1, being currently by one
Light shield with different light transmittances is exposed, wherein it is maximum to form the corresponding light shield light transmittance values of main spacer material, is typically
100%；Form the corresponding light shield light transmittance values of secondary dottle pin object area secondly, generally 30%~40%, and form black matrix"
The corresponding light shield light transmittance in region of layer is minimum, and generally 15%~25%.Because black interval layer material is by UV illumination
Dosage is different and occurs different cross-linking reactions, and different differences in height is generated in developing process to form main spacer material, pair
Spacer material and black-matrix layer.
The difference in height of usual main spacer material and secondary spacer material is typically required in 0.3um~0.8um, it is ensured that had preferably
LC Margin, and the debugging for the design, light exposure and developing time that current black interval layer material passes through light shield light transmittance can
So that the difference in height of main spacer material and secondary spacer material is reached into this scope of 0.3um~0.8um.Due to black interval layer material by
Dosage to UV illumination is different and occurs different cross-linking reactions, and different differences in height is generated in developing process to form master
Spacer material, secondary spacer material and black-matrix layer, wherein the corresponding region of main spacer material receives the intensity of illumination of sufficient dosage,
Crosslink reaction more complete, thus the equal property of thickness is preferable；And the corresponding region of secondary spacer material/black-matrix layer by
Illumination dose it is not enough, react only complete, thus the influence for each factor of environment that is highly prone in developing process to develop, cause
The uniformity of secondary spacer material and black matrix" thickness is poor.So as to influence LC Margin or even produce aberration (mura) and influence
To the display effect of final finished.
The content of the invention
It is an object of the present invention to overcome the defect of prior art, invent a kind of new array base palte, make secondary spacer material and
Black interval layer processing in main dottle pin object area is simpler, and thickness is evenly.
A kind of array base palte, including：Secondary spacer material and the main spacer material for being arranged on secondary spacer material surrounding, the main spacer material
With secondary spacer material include being successively set on from the bottom to top thin film transistor (TFT) on substrate, the first protective layer, color blocking layer, flatness layer with
And black interval layer；
The color blocking layer includes red color resistance layer, blue color blocking layer and green color blocking layer, is arranged on main dottle pin object area
Include in red color resistance layer, blue color blocking layer and green color blocking layer two of color blocking be sequentially overlapped to be formed, be arranged on it is secondary every
The colour cell in underbed area includes one in red color resistance layer, blue color blocking layer and green color blocking floor.
Described array base palte, wherein, the thickness phase of the red color resistance layer, blue color blocking layer and green color blocking layer
Together.
Described array base palte, wherein, the thickness of the main spacer material is more than the thickness of secondary spacer material, and its thickness difference is
0.6~0.8um.
Described array base palte, wherein, the main spacer material flatwise thickness degree is flat with secondary dottle pin object area
Smooth layer thickness difference is 0.8~1.2um.
Described array base palte, wherein, the main dottle pin object area color blocking thickness is more than the color of secondary dottle pin object area
Thickness is hindered, its thickness difference is 1.5~1.8um.
Described array base palte, wherein, the color blocking of the main dottle pin object area includes being successively set on the first protective layer
Red color resistance layer and blue color blocking layer.
Described array base palte, wherein, the color blocking of the secondary dottle pin object area includes red color resistance layer.
A kind of manufacture method of array base palte：Comprise the following steps：
Step (1), thin film transistor (TFT) array is formed on substrate；
Step (2), the first protective layer is formed on thin film transistor (TFT)；
Color blocking layer is formed respectively in step (3), the first protective layer, wherein, the color blocking of main dottle pin object area includes red color
Two in resistance layer, blue color blocking layer and green color blocking three kinds of color blocking of layer are sequentially overlapped, and the color blocking of secondary dottle pin object area includes
One in red color resistance layer, blue color blocking layer and green color blocking layer.
Step (4), one layer of flatness layer of coating in color blocking；
Painting black wall on the basis of step (5), the landform difference of step (4) formation.
The manufacture method of described array base palte, wherein：The color blocking of the main dottle pin object area includes being successively set on the
Red color resistance layer and blue color blocking layer on one protective layer.
The manufacture method of described array base palte, wherein：The color blocking of the secondary dottle pin object area includes red color resistance layer.
The present invention has advantages below：Due to black matrix" and spacer material, with identical material and with along with, manufacturing process can
To complete, production cycle and reduction production cost are reduced, product competitiveness is improved；
Terrain Elevation required for foring main spacer material and secondary spacer material by the stacking of lower floor's color blocking is poor, without black
Color wall itself forms the difference in height of main spacer material and secondary spacer material, the black interval layer material largely reduced
Development difficulty, while the stability of the technique also ensured；
Because black interval layer material need not form the difference in height of main spacer material and secondary spacer material, black interval is added
The selectivity of layer raw material types, makes the reliability of black interval layer material be guaranteed, so as to also ensure that final finished
The reliability of display panel.
Brief description of the drawings
The invention will be described in more detail below based on embodiments and refering to the accompanying drawings.Wherein：
Fig. 1 is the structural representation of existing array base palte；
Fig. 2 is the structural representation of array base palte of the present invention.
In the accompanying drawings, identical part uses identical reference.Accompanying drawing is not according to actual ratio.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
A kind of array base palte, including：Secondary spacer material 10 and the main spacer material 20 for being arranged on the secondary surrounding of spacer material 10, the master
Spacer material 20 and secondary spacer material 10 include setting gradually thin film transistor (TFT) 3, the first protective layer 2, color on substrate 1 from the bottom to top
Resistance layer, flatness layer 6 and black interval layer 7；
The color blocking layer includes red color resistance layer, blue color blocking layer and green color blocking layer, is arranged on the main area of spacer material 20
The color blocking in domain is sequentially overlapped to be formed including two in red color resistance layer, blue color blocking layer and green color blocking layer, is arranged on pair
The colour cell in the region of spacer material 10 includes one in red color resistance layer, blue color blocking layer and green color blocking layer.Pass through lower floor's color
Terrain Elevation required for the stacking of resistance forms main spacer material and secondary spacer material is poor, is formed without black interval layer itself
The difference in height of main spacer material and secondary spacer material, the development difficulty of the black interval layer material largely reduced, while also protecting
The stability of the technique of card.
Described array base palte, wherein, the thickness phase of the red color resistance layer, blue color blocking layer and green color blocking layer
Together.As shown in Fig. 2 in one embodiment, being arranged on the color blocking in the main region of spacer material 20 includes red color resistance layer 4 and blue color
Resistance layer 5, being arranged on the color blocking in the secondary region of spacer material 20 includes red color resistance layer 4, wherein, the red color resistance 4 and blue color blocking 5
Thickness be 2.5um, i.e. the then color blocking thickness of the Δ H1 main dottle pin object area color blocking thickness and secondary dottle pin object area
Difference is 1.5~1.8um.It is high because the planarization of flatness layer 6 is acted on again after tunic thickness 2.0um flatness layer 6 is covered
I.e. the flatness layer thickness difference of the poor main spacer material flatwise thickness degree of Δ H2 of degree and secondary dottle pin object area is 0.8~1.2um.
Finally in the processing procedure of black interval layer 7, because the color blocking stacking and flatness layer of lower floor have been formd with height
The physical features of difference is spent, on the basis of this physical features, because the covering of black interval layer 7 can form new difference in height Δ H0 namely
The thickness difference of the thickness of main spacer material and secondary spacer material is 0.6~0.8um.According to this difference in height, main spacer material is also formed
20 and secondary spacer material 10.Wherein main spacer material 20 plays the effect for supporting whole liquid crystal cell thick；Secondary spacer material 10 be used for panel by
To aiding in the support thick to whole liquid crystal cell of main spacer material during extruding.Black interval layer 7 be used to preventing colour mixture between color blocking and
Improve panel contrast and obtain optimal display result.
A kind of manufacture method of array base palte：Comprise the following steps：
Step (1), thin film transistor (TFT) array is formed on substrate；
Step (2), the first protective layer is formed on thin film transistor (TFT)；
Color blocking layer is formed respectively in step (3), the first protective layer, wherein, the color blocking of main dottle pin object area includes red color
Two in resistance layer, blue color blocking layer and green color blocking three kinds of color blocking of layer are sequentially overlapped, and the color blocking of secondary dottle pin object area includes
One in red color resistance layer, blue color blocking layer and green color blocking layer.
Step (4), one layer of flatness layer of coating in color blocking；
Painting black wall on the basis of step (5), the landform difference of step (4) formation.
The manufacture method of described array base palte, wherein：The color blocking in the region of main spacer material 20 includes being successively set on
Red color resistance layer 4 and blue color blocking layer 5 on first protective layer 2.
The manufacture method of described array base palte, wherein：The color blocking in the region of secondary spacer material 10 includes red color resistance layer
4。
Due to black matrix" and spacer material, with identical material and with along with, manufacturing process can just be completed, and reduce the production cycle
And reduction production cost, improve product competitiveness；
Terrain Elevation required for foring main spacer material and secondary spacer material by the stacking of lower floor's color blocking is poor, without black
Color wall itself forms the difference in height of main spacer material and secondary spacer material, the black interval layer material largely reduced
Development difficulty, while the stability of the technique also ensured；
Because black interval layer material need not form the difference in height of main spacer material and secondary spacer material, black interval is added
The selectivity of layer raw material types, makes the reliability of black interval layer material be guaranteed, so as to also ensure that final finished
The reliability of display panel.
Although by reference to preferred embodiment, invention has been described, is not departing from the situation of the scope of the present invention
Under, various improvement can be carried out to it and part therein can be replaced with equivalent.Especially, as long as in the absence of structure punching
Prominent, the every technical characteristic being previously mentioned in each embodiment can combine in any way.The invention is not limited in text
Disclosed in specific embodiment, but all technical schemes including falling within the scope of the appended claims.
Claims (10)
1. a kind of array base palte, it is characterised in that including：Secondary spacer material and the main spacer material for being arranged on secondary spacer material surrounding, institute
State thin film transistor (TFT), the first protective layer, color blocking that main spacer material and secondary spacer material include being successively set on from the bottom to top on substrate
Layer, flatness layer and black interval layer；
The color blocking layer includes red color resistance layer, blue color blocking layer and green color blocking layer, is arranged on the color of main dottle pin object area
Hinder two included in red color resistance layer, blue color blocking layer and green color blocking layer to be sequentially overlapped to be formed, be arranged on secondary spacer material
The colour cell in region includes one in red color resistance layer, blue color blocking layer and green color blocking layer.
2. array base palte according to claim 1, it is characterised in that the red color resistance layer, blue color blocking layer and green
The thickness of color color blocking layer is identical.
3. array base palte according to claim 1, it is characterised in that the thickness of the main spacer material is more than secondary spacer material
Thickness, its thickness difference is 0.6~0.8um.
4. the array base palte according to belonging to claim 1, it is characterised in that the main spacer material flatwise thickness degree with
The flatness layer thickness difference of secondary dottle pin object area is 0.8~1.2um.
5. the array base palte according to belonging to claim 1, it is characterised in that the main dottle pin object area color blocking thickness is more than
The color blocking thickness of secondary dottle pin object area, its thickness difference is 1.5~1.8um.
6. the array base palte according to belonging to claim 1, it is characterised in that the color blocking of the main dottle pin object area includes setting successively
Put red color resistance layer and blue color blocking layer on the first protective layer.
7. the array base palte according to belonging to claim 1, it is characterised in that the color blocking of the secondary dottle pin object area includes red color
Resistance layer.
8. a kind of manufacture method of array base palte, it is characterised in that：Comprise the following steps：
Step (1), thin film transistor (TFT) array is formed on substrate；
Step (2), the first protective layer is formed on thin film transistor (TFT)；
Form color blocking layer respectively in step (3), the first protective layer, wherein, the color blocking of main dottle pin object area include red color resistance layer,
Two in blue color blocking layer and green color blocking three kinds of color blocking of layer are sequentially overlapped, and the color blocking of secondary dottle pin object area includes red color
One in resistance layer, blue color blocking layer and green color blocking layer.
Step (4), one layer of flatness layer of coating in color blocking；
Painting black wall on the basis of step (5), the landform difference of step (4) formation.
9. the manufacture method of array base palte according to claim 8, it is characterised in that：The color blocking of the main dottle pin object area
Including the red color resistance layer and blue color blocking layer being successively set on the first protective layer.
10. the manufacture method of array base palte according to claim 8, it is characterised in that：The color of the secondary dottle pin object area
Resistance includes red color resistance layer.
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| CN201710639731.4A CN107193162A (en) | 2017-07-31 | 2017-07-31 | A kind of array base palte and manufacture method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107505780A (en) * | 2017-09-26 | 2017-12-22 | 深圳市华星光电半导体显示技术有限公司 | BPS type array base paltes and preparation method thereof |
| CN108535909A (en) * | 2018-04-17 | 2018-09-14 | 深圳市华星光电技术有限公司 | The production method and BPS type array substrates of BPS type array substrates |
| CN108897163A (en) * | 2018-09-12 | 2018-11-27 | 惠科股份有限公司 | The production method of display panel and display panel |
| CN110058460A (en) * | 2018-01-19 | 2019-07-26 | 夏普株式会社 | Liquid crystal display panel |
| WO2020062518A1 (en) * | 2018-09-30 | 2020-04-02 | 惠科股份有限公司 | Color film substrate and display panel |
| CN111045267A (en) * | 2020-01-06 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | COA substrate and liquid crystal display panel |
| WO2020134995A1 (en) * | 2018-12-25 | 2020-07-02 | 惠科股份有限公司 | Array substrate manufacturing method for display apparatus, and display apparatus |
| US11009740B2 (en) | 2018-09-12 | 2021-05-18 | HKC Corporation Limited | Display panel and method for fabricating display panel |
| US11280943B2 (en) | 2018-09-30 | 2022-03-22 | HKC Corporation Limited | Color film substrate and display panel |
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Application publication date: 20170922 |