CN107180736B - A kind of devices and methods therefor promoting injection ion collimation - Google Patents
A kind of devices and methods therefor promoting injection ion collimation Download PDFInfo
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- CN107180736B CN107180736B CN201710456644.5A CN201710456644A CN107180736B CN 107180736 B CN107180736 B CN 107180736B CN 201710456644 A CN201710456644 A CN 201710456644A CN 107180736 B CN107180736 B CN 107180736B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of devices and methods therefors promoting injection ion collimation, wherein, described device includes target disc platform, Faraday cup array, micro- magnetic field array and control unit, the target disc platform is for placing wafer to be processed, the Faraday cup array is rearranged by the Faraday cup being generally aligned in the same plane, the Faraday cup array and the wafer to be processed are in the same plane, and can mutually it switch in the In-plane position, micro- magnetic field array is set towards the top of ion beam direction in target disc platform, described control unit is separately connected micro- magnetic field array and Faraday cup array.A kind of device promoting injection ion collimation provided by the invention improves the collimation of injection ion the phenomenon that detecting the collimation of ion beam using Faraday cup array, and adjust the collimation of ion beam by micro- magnetic field array, avoid incident ion diverging.
Description
Technical field
The present invention relates to ion implantation technique fields, and in particular to a kind of to promote the device for injecting ion collimation and its side
Method.
Background technology
Ion implantation apparatus is the key equipment in IC manufacturing process, and ion implanting is exactly the element that will be injected
It is ionized, and cation is detached and accelerated, formed with tens thousand of electron-volts of high energy ion current, bombard workpiece surface,
Ion is driven into because kinetic energy is very big in surface layer, and charge is neutralized, and becomes the interstitial atom between displaced atom or lattice, is stayed
In surface layer, the chemical composition of material, properity is made to generate variation.Ion implanting, can be right compared to conventional hot doping technique
Implantation dosage, implant angle, injection depth, horizontal proliferation etc. are accurately controlled.Therefore, ion implantation apparatus is used extensively
In doping process, it has also become essential critical equipment in integrated circuit fabrication process.
Acceleration processing of the ion that ion implantation apparatus intermediate ion source is launched Jing Guo intermediate link, which enters in target disc device, bangs
Crystal column surface to be processed is hit, the technique for completing ion implanting.In order to efficiently carry out ion implanting to wafer to be processed, it is desirable to
The width range of incident ion is more than the area of wafer, could be carried out in this way to crystal column surface effective in an injection technology
Ion implanting.It is larger sized in order to adapt to as semiconductor technology manufacturing technology enters 12 cun of even bigger die sizes
Silicon chip or other wafers occur the larger wide beam scanning of scanning range in ion implantation technique, and are increasingly becoming injection
The mainstream technology of machine.
As shown in Fig. 1, Fig. 1 be ion implanting equipment structure chart, ion beam after ion source emits, need through
Crossing the acceleration processing of intermediate link can just be incident on wafer to be processed, and wide beam scan required ion beam beam width compared with
Greatly, certain diversity is will produce before injecting wafer to be processed, is deteriorated so as to cause line collimation, performance declines so that
The center of wafer to be processed and marginal position ion implanting are uneven, influence the effect of ion implantation technology.The prior art
The device of middle detection wide beam stream collimation is a Faraday cup, and charged ion is by that can obtain an electric current in Faraday cup
Value detects the collimation of ion beam by the lateral longitudinal movement of the Faraday cup planar.But single Faraday cup
Movement need the time longer, and there are certain errors, cannot accurately detect the collimation of ion beam.
Invention content
Technical problem to be solved by the invention is to provide a kind of devices and methods therefors promoting injection ion collimation, should
Device detects the collimation of ion beam using Faraday cup array, and the collimation of ion beam is adjusted by micro- magnetic field array, keeps away
The phenomenon that having exempted from incident ion diverging, improves the collimation of ion beam.
To achieve the goals above, the present invention adopts the following technical scheme that：A kind of device promoting injection ion collimation,
Wherein, including target disc platform, Faraday cup array, micro- magnetic field array and control unit, the target disc platform are to be added for placing
Work wafer, the Faraday cup array are rearranged by the Faraday cup being generally aligned in the same plane, the Faraday cup array and institute
It is in the same plane to state wafer to be processed, and can mutually switch in the In-plane position, in target disc platform towards ion beam side
To top micro- magnetic field array is set, described control unit is separately connected micro- magnetic field array and Faraday cup array；Work as ion beam
When incident, Faraday cup array is switched to ion beam incoming position, ion beam passes through different location in Faraday cup array
Faraday cup obtains the current value corresponding to the ion beam of different location, and the current value is fed back to control unit, described
Control unit adjusts micro- magnetic field array according to the current value, and micro- magnetic field array is adjusted ion beam, until ion
The current value that beam passes through in Faraday cup array corresponding to the Faraday cup of different location is equal, at this point, wafer to be processed is cut
Ion beam incoming position is shifted to, ion beam carries out ion implanting to the wafer to be processed on target disc platform.
Further, the area of the Faraday cup array is less than or equal to the area of ion beam.
Further, when the area of the Faraday cup array is less than the area of ion beam, the Faraday cup is along it
X-axis and/or Y axis scanning are carried out in the plane at place.
Further, it is connected by fixed connection apparatus between the Faraday cup array and wafer to be processed.
Further, the area of micro- magnetic field array is more than the incident area of ion beam, and is the micro- magnetic field array of annular.
Further, the position of micro- magnetic field array can be adjusted.
Further, when the area of the ion beam is less than the area of wafer to be processed, ion beam is along X-axis and/or Y-axis side
To being scanned.
Further, the ion beam scans for wide beam, when the length of ion beam in the X-axis direction is more than or equal to be processed
When brilliant diameter of a circle, the ion beam is scanned along Y direction.
Further, the ion beam scans for wide beam, when the length of ion beam in the Y-axis direction is more than or equal to be processed
When brilliant diameter of a circle, the ion beam is scanned along X-direction.
A kind of method promoting injection ion collimation provided by the invention, steps are as follows：
S01：Ion source emits ion beam, and Faraday cup array is switched to the ion beam incoming position；
S02：Ion beam passes through the Faraday cup of different location in Faraday cup array, obtains the ion beam institute of different location
Corresponding current value；
S03：Above-mentioned current value is fed back into control unit, control unit adjusts micro- magnetic field array according to above-mentioned current value,
Micro- magnetic field array is adjusted ion beam；
S04：Step S03 is repeated, until corresponding to Faraday cup of the ion beam by different location in Faraday cup array
Current value it is equal；
S05：Wafer to be processed is switched into the ion beam incoming position, carries out ion implanting.
Beneficial effects of the present invention are:The method of detection ion beam collimation is increased in the plane where wafer to be processed
The array is drawn, if the corresponding current value of all Faraday cups is identical in Faraday cup array, illustrates that ion beam collimation is good,
If the corresponding current value of the Faraday cup of different location is different in Faraday cup array, illustrate that ion beam collimation is bad；
Micro- magnetic field array is arranged towards the top of ion beam direction in target disc platform, for adjusting ion beam so that it passes through Faraday cup
The current value of array is identical, by the adjustment and detection to ion beam, avoids the phenomenon that incident ion dissipates, improves injection
The collimation of ion.
Description of the drawings
Fig. 1 is the structure chart of ion implanting equipment in the prior art.
Fig. 2 is the floor map of Faraday cup array and wafer to be processed in the present invention.
Fig. 3 is the floor map of the present invention micro- magnetic field array and ion beam.
Fig. 4 is the structural schematic diagram of detection adjustment ion beam collimation in the present invention.
Fig. 5 is the structural schematic diagram of ion implantation technology of the present invention.
In figure：2 ion beams, 3 micro- magnetic field arrays, 4 Faraday cup arrays, 5 target disc platforms, 6 wafers to be processed, 7 companies of fixation
Connection device.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in further detail.
A kind of device promoting injection ion collimation provided by the invention, including it is target disc platform, Faraday cup array, micro-
Magnetic field array and control unit, target disc platform is for placing wafer to be processed, and Faraday cup array is by the method that is generally aligned in the same plane
Draw the glass to rearrange, Faraday cup array and wafer to be processed are in the same plane, and the In-plane position can be mutual
Micro- magnetic field array is arranged towards the top of ion beam direction in target disc platform in switching, and control unit is separately connected micro- magnetic field array
And Faraday cup array is switched to ion beam incoming position by Faraday cup array when ion source starts to emit ion beam, from
Beamlet passes through the Faraday cup of different location in Faraday cup array, obtains the current value corresponding to the ion beam of different location,
And current value is fed back into control unit, control unit adjusts micro- magnetic field array according to current value, and micro- magnetic field array is to ion beam
It is adjusted, until the current value corresponding to Faraday cup of the ion beam by different location in Faraday cup array is equal, this
When, wafer to be processed is switched into ion beam incoming position, ion beam carries out ion note to the wafer to be processed on target disc platform
Enter.
A kind of method promoting injection ion collimation provided by the invention, steps are as follows：
S01：Ion source emits ion beam, and Faraday cup array is switched to ion beam incoming position；
S02：Ion beam passes through the Faraday cup of different location in Faraday cup array, obtains the ion beam institute of different location
Corresponding current value；
S03：Above-mentioned current value is fed back into control unit, control unit adjusts micro- magnetic field array according to above-mentioned current value,
Micro- magnetic field array is adjusted ion beam；
S04：Step S03 is repeated, until corresponding to Faraday cup of the ion beam by different location in Faraday cup array
Current value it is equal；
S05：Wafer to be processed is switched into the ion beam incoming position, carries out ion implanting.
As shown in Fig. 2, Faraday cup array 4 and wafer to be processed 6 are in the same plane, and between the two by solid
Determine the connection of attachment device 7, in this way when wafer to be processed is moved, Faraday cup array is driven also to do corresponding shifting
It is dynamic so that the movement of wafer to be processed will not touch Faraday cup array, to influence the arrangement position of Faraday cup array
It sets.
Wherein, the area of Faraday cup array is less than or equal to the area of ion beam, because the effect of Faraday cup array is
Collimation when ion beam carries out wafer to be processed ion implanting is detected, when the area of Faraday cup array is equal to ion beam
When area, so that it may the collimation of the ion beam on wafer to be processed is incident on one-time detection, when the area of faraday's array is small
When the area of ion beam, it is scanned along X-axis and/or Y direction in the plane that Faraday cup array can be where it,
I.e. when Faraday cup, length is more than or equal to the width of ion beam in the X-axis direction in X-axis, and the length in Y-axis is less than ion
When beam width in the Y-axis direction, Faraday cup array can be scanned in the Y-axis direction, by the movement in Y-axis,
Faraday cup array can detect the ion collimation of all positions in ion beam.Similarly, when Faraday cup in Y-axis length
More than or equal to the width of ion beam in the Y-axis direction, when the length in X-axis is less than the width of ion beam in the X-axis direction, method
Draw the array can be scanned in the X-axis direction, by the movement in X-axis, Faraday cup array can detect from
The ion collimation of all positions in beamlet.The arrangement mode and spacing distance of single Faraday cup in Faraday cup array,
The requirement of ion implantation uniformity can be set according to wafer to be processed, arranged between single Faraday cup it is closer,
It will be more accurate to the collimation testing result of ion beam.
Wherein, the area of ion beam is less than or equal to the area of wafer to be processed.When the area of ion beam is equal to crystalline substance to be processed
When round area, the primary incidence of ion beam can complete the ion implanting to wafer to be processed.When the area of ion beam is small
When the area of wafer to be processed, ion beam needs are scanned along X-axis and/or Y direction, could be realized and be treated in all directions
Process the ion implanting of wafer.I.e. when ion beam, width is more than or equal to the diameter of wafer to be processed in the X-axis direction in X-axis,
When the width in Y-axis is less than the diameter of wafer to be processed in the Y-axis direction, ion beam needs to be scanned in the Y-axis direction,
By the movement in Y-axis, ion beam can carry out ion implanting to all surfaces of wafer to be processed.Similarly, work as ion beam
Width is more than or equal to the diameter of wafer to be processed in the Y-axis direction in Y-axis, and the width in X-axis is less than wafer to be processed in X
When diameter in axis direction, ion beam needs to be scanned in the X-axis direction, and by the movement in X-axis, ion beam can be right
The all surfaces of wafer to be processed carry out ion implanting.Similarly, the width when ion beam in X-axis and Y-axis is respectively less than to be processed
Wafer in the diameter in X-axis and Y-axis, ion beam needs be all scanned in X-axis and Y-axis, could to wafer to be processed into
The complete ion implanting of row.Likewise, the selection of ion beam can select an ion beam or multiple ion beams be carried out at the same time into
It penetrates, the scanning range of ion beam of being subject to can cover all surfaces of wafer to be processed.
As shown in Figure 3, wherein the area of micro- magnetic field array 3 is more than the area of ion beam, and is the micro- magnetic field array of annular
Row.During be emitted to injection crystal column surface to be processed, the ion stream of ion beam center will not become ion beam
Change, but can be influenced by extraneous factor in the ion stream of the marginal position of ion beam, is deflected.Therefore, setting annular
Micro- magnetic field array, it is therefore intended that the edge ion stream of ion beam is corrected.The position of micro- magnetic field array is close to be added
In plane where work wafer, specific location can be configured according to the size of micro- magnetic field array.
As shown in figure 4, when ion beam incidence, Faraday cup array 4 is switched to 2 incoming position of ion beam, ion beam
By the Faraday cup of different location in Faraday cup array, the current value corresponding to the ion beam of different location is obtained, wherein
Faraday cup array can be scanned along X-axis and/or Y direction, and current value is fed back to control unit and (is not shown in figure
Go out), control unit adjusts micro- magnetic field array 3 according to current value, and micro- magnetic field array is adjusted ion beam, until ion beam passes through
The current value crossed in Faraday cup array corresponding to the Faraday cup of different location is equal.
As shown in figure 5, after the collimation of ion beam is adjusted, wafer 6 to be processed is switched into ion beam incidence position
It sets, wherein ion beam can be scanned along X-axis and/or Y direction, and ion beam 2 is to the crystalline substance to be processed on target disc platform 5
Circle 6 carries out ion implanting.
The foregoing is merely the preferred embodiment of the present invention, the embodiment is not intended to limit the patent protection of the present invention
Range, therefore equivalent structure variation made by every specification and accompanying drawing content with the present invention, similarly should be included in this
In the protection domain of invention appended claims.
Claims (10)
1. a kind of device promoting injection ion collimation, which is characterized in that including target disc platform, Faraday cup array, micro- magnetic
Field array and control unit, for the target disc platform for placing wafer to be processed, the Faraday cup array is same flat by being located at
The Faraday cup in face rearranges, and the Faraday cup array and the wafer to be processed are in the same plane, and flat at this
Position can mutually switch in face, and micro- magnetic field array, described control unit is arranged towards the top of ion beam direction in target disc platform
It is separately connected micro- magnetic field array and Faraday cup array；When ion beam incidence, Faraday cup array is switched to ion beam and is entered
Position is penetrated, ion beam passes through the Faraday cup of different location in Faraday cup array, obtains corresponding to the ion beam of different location
Current value, and the current value is fed back into control unit, described control unit adjusts micro- magnetic field array according to the current value
Row, micro- magnetic field array are adjusted ion beam, until farad of the ion beam by different location in Faraday cup array
Current value corresponding to glass is equal, at this point, wafer to be processed is switched to ion beam incoming position, ion beam is to target disc platform
On wafer to be processed carry out ion implanting.
2. a kind of device promoting injection ion collimation according to claim 1, which is characterized in that the Faraday cup
The area of array is less than or equal to the area of ion beam, and the area of the ion beam is that the ion beam passes through the Faraday cup array
When, the incident area on the Faraday cup array.
3. a kind of device promoting injection ion collimation according to claim 2, which is characterized in that the Faraday cup
When the area of array is less than the area of ion beam, the Faraday cup is swept along progress X-axis and/or Y-axis in the plane where it
It retouches.
4. a kind of device promoting injection ion collimation according to claim 1, which is characterized in that the Faraday cup
It is connected by fixed connection apparatus between array and wafer to be processed.
5. a kind of device promoting injection ion collimation according to claim 1, which is characterized in that micro- magnetic field array
The area of row is more than the incident area of ion beam, and is the micro- magnetic field array of annular.
6. a kind of device promoting injection ion collimation according to claim 1, which is characterized in that micro- magnetic field array
The position of row can be adjusted.
7. a kind of device promoting injection ion collimation according to claim 1, which is characterized in that the ion beam
When area is less than the area of wafer to be processed, ion beam is scanned along X-axis and/or Y direction, wherein the ion beam
When area is that the ion beam passes through the wafer to be processed, the incident area on the wafer to be processed.
8. a kind of device promoting injection ion collimation according to claim 7, which is characterized in that the ion beam is
Wide beam scans, and when the length of ion beam in the X-axis direction is more than or equal to brilliant diameter of a circle to be processed, the ion beam is along Y-axis
Direction is scanned.
9. a kind of device promoting injection ion collimation according to claim 7, which is characterized in that the ion beam is
Wide beam scans, and when the length of ion beam in the Y-axis direction is more than or equal to brilliant diameter of a circle to be processed, the ion beam is along X-axis
Direction is scanned.
10. a kind of method promoting injection ion collimation using device described in claim 1, steps are as follows：
S01：Ion source emits ion beam, and Faraday cup array is switched to the ion beam incoming position；
S02：Ion beam passes through the Faraday cup of different location in Faraday cup array, obtains corresponding to the ion beam of different location
Current value；
S03：Above-mentioned current value is fed back into control unit, control unit adjusts micro- magnetic field array, micro- magnetic according to above-mentioned current value
Field array is adjusted ion beam；
S04：Step S03 is repeated, until the electricity corresponding to Faraday cup of the ion beam by different location in Faraday cup array
Flow valuve is equal；
S05：Wafer to be processed is switched into the ion beam incoming position, carries out ion implanting.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710456644.5A CN107180736B (en) | 2017-06-16 | 2017-06-16 | A kind of devices and methods therefor promoting injection ion collimation |
| US16/620,859 US11120970B2 (en) | 2017-06-16 | 2017-06-30 | Ion implantation system |
| PCT/CN2017/091084 WO2018227668A1 (en) | 2017-06-16 | 2017-06-30 | Ion implantation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710456644.5A CN107180736B (en) | 2017-06-16 | 2017-06-16 | A kind of devices and methods therefor promoting injection ion collimation |
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| CN107180736A CN107180736A (en) | 2017-09-19 |
| CN107180736B true CN107180736B (en) | 2018-10-16 |
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| CN201710456644.5A Active CN107180736B (en) | 2017-06-16 | 2017-06-16 | A kind of devices and methods therefor promoting injection ion collimation |
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| CN111261477B (en) * | 2018-12-03 | 2022-08-02 | 北京中科信电子装备有限公司 | Double-outlet parallel lens |
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| CN101120428A (en) * | 2005-02-24 | 2008-02-06 | 株式会社爱发科 | Ion implantation device control method, control system thereof, control program thereof, and ion implantation device |
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