CN107164740B - A method of diamond film is prepared using MPCVD method - Google Patents
A method of diamond film is prepared using MPCVD method Download PDFInfo
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- CN107164740B CN107164740B CN201710334072.3A CN201710334072A CN107164740B CN 107164740 B CN107164740 B CN 107164740B CN 201710334072 A CN201710334072 A CN 201710334072A CN 107164740 B CN107164740 B CN 107164740B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
Abstract
The present invention discloses a kind of method for preparing diamond film using MPCVD method, belongs to Opacity in lens technical field.In this method, chip bench is placed on the intracorporal water-cooled platform of microwave plasma CVD diamond film device reaction chamber, structure include for placing the center groove of deposition substrate, annular outer goes out portion, annular inner bulge, the annular groove between interior outside bulge and the outer surface on the outside of outside bulge.The chip bench is independently of reaction cavity and water-cooled platform, it is distributed for placing deposition substrate and forming uniform and stable electric field and plasma above it, the uniformity of prepared diamond film is improved, while the impurity of chip bench non-deposited Area generation can be effectively prevent to be sputtered onto deposition substrate and pollute diamond film.The present invention have many advantages, such as to design and produce it is simple, can prepare diamond membrane with large area, be suitable for preparing the diamond film of different sizes and thickness, the diamond film quality of preparation it is high.
Description
Technical field
The invention belongs to Opacity in lens technical fields, are related to a kind of using MPCVD method preparation
The method of diamond film.
Background technique
Diamond has high hardness, and has high thermal conductivity, low thermal coefficient of expansion, high chemical inertness at room temperature
Equal excellent properties can be widely applied to the necks such as cutter, coating, optical window and acoustic sensor, semiconductor and electronic device
Domain.Currently, the demand of diamond is big, and natural diamond reserves are seldom, therefore, uniform for high speed, high quality, large area
The research of the technology of preparing of growing diamond film is especially urgent.
MPCVD method (MPCVD method) be a kind of quality is high, easily manipulate manually prepare Buddha's warrior attendant
The method of stone, the basic principle is that being excited in low molecule carbon appropriate hydrocarbon gas (such as methane) and the mixed gas of hydrogen using microwave
Plasma, in the hot environment of plasma, carbon atom, which deposits to, to be placed in the deposition substrate of chip bench, to realize
The Artificial Growth of diamond film.MPCVD method prepares diamond film and carrys out provocative reaction gas using electromagnetic wave energy, has electrodeless
The advantages that spreading, is concentrated and are not easy to pollution, plasma, and the diamond properties and natural diamond prepared with MPCVD method are close,
Partial properties have even surmounted natural diamond, are very suitable to the diamond for growing high quality, are current diamond synthesis
One of most promising method.
Microwave plasma CVD (MPCVD) device generally comprises microwave system, vacuum system, gas supply system
System, cooling system and plasma-reaction-chamber, wherein plasma-reaction-chamber is the critical component of MPCVD device, including microwave
The components such as plasma reaction chamber, water-cooled platform, chip bench.In MPCVD device, it is anti-that chip bench is placed in microwave plasma
It answers on the intracorporal water-cooled platform of chamber, design has a major impact the intracorporal electric field of reaction chamber and plasma distribution and uniformity,
Diamond for preparing high-quality plays an important role.
Common chip bench design uses simple circular structure, and deposition substrate is placed in the planar support surface of disk.Due to
The electric field of the influence of edge effect, deposition substrate outer rim is better than the electric field of central area, thus affect in reaction cavity it is equal from
The density distribution uniformity of daughter causes the diamond film to grow out in uneven thickness.In addition, this simple circular structure is not
The impurity that can effectively prevent non-deposited Area generation, which is sputtered onto deposition substrate, pollutes diamond film, influences diamond film product
Quality and quality.
103911596 B of Chinese patent CN discloses a kind of chip bench with refractory metal annulus, which is located at
Lower half portion above chip bench inside plasmasphere can change plasma density distribution close to plasmasphere boundary,
To improve diamond film deposition uniformity.This structure needs to set up non-metal frame resistant to high temperature in chip bench surrounding, will
Refractory metal annulus is fixedly connected by tungsten wire or tantalum wire with non-metal frame.The shortcomings that this chip bench structure, is the introduction of
The additional component such as non-metal frame, structure become complicated；In addition, needing to draw to effectively improve the uniformity of plasmasphere
Enter positioning mechanism to ensure that bracket and the metal ring being fixed thereon is accurately positioned, which in turns increases structures
Complexity implements precision that is more difficult and being difficult to ensure positioning in practical applications.
103392218 B of Chinese patent CN discloses a kind of Curve guide impeller of chip bench, by leading around chip bench setting
Electro-plasma stabilizing ring improves the uniformity of plasma in MPCVD device reaction cavity, which is arranged in reaction chamber
The side wall or end wall in internal portion.The shortcomings that this structure is: conductive plasma stabilizing ring becomes one of reaction cavity
Point, it is difficult to sized once fixed, is not suitable for preparing the diamond film of different size specification；Stabilization cannot be effectively prevented
The impurity of the non-deposited Area generation such as ring is sputtered onto the diamond film that growth is polluted in deposition substrate；The stabilizing ring is used to prepare greatly
When the MPCVD device of area diamond film, since the reaction cavity size of device is big, it is intracorporal reaction chamber cannot to be effectively improved
Field distribution is to improve the uniformity of plasma.
Summary of the invention
The purpose of the present invention in view of the deficienciess of the prior art, the present invention provide it is a kind of using microwave plasma chemical
The method that vapour deposition process prepares diamond film, it is therefore an objective to effectively improve plasma in MPCVD device reaction cavity and be distributed
Uniformity, improve the quality of the diamond film of preparation.
To achieve the goals above, the present invention adopts the following technical scheme:
A method of diamond film is prepared using MPCVD method, comprising the following steps:
Step 1: opening the reaction chamber of MPCVD device, chip bench be placed on water-cooled platform, will be heavy after surface preparation
In the center groove of product substrate merging chip bench；
Step 2: closing reaction chamber, and the air pressure for being evacuated to reaction chamber is 0.1-1.0Pa；
Step 3: high-purity hydrogen, mass flow 500-6000sccm, when reaction chamber air pressure is 500- are passed through
When 3000Pa, open microwave input and regulation power be 1-3kW, microwave frequency 915MHz/2450MHz, build-up of luminance generate etc. from
Daughter；
Step 4: continue to be passed through hydrogen, mass flow 500-6000sccm adjusts reaction chamber air pressure to 10-
15kPa is adjusted in synchronism microwave input power to 5-75kW, starts to be passed through carbon hydrocarbon when deposition substrate temperature reaches 700-800 DEG C
Gas makes diamond in deposition substrate surface forming core, and nucleated time is 15-40 minutes；
Step 5: the various process parameters for adjusting MPCVD device carry out the preparation of diamond film, wherein microwave input power
For 5-75kW, reaction chamber air pressure be 10-20kPa, deposition substrate temperature is 700-1000 DEG C；
Under above-mentioned technological parameter, the deposition velocity of diamond film is 1-15 μm/hour, by growth in 8-250 hours, is obtained
To the diamond film with a thickness of 0.1-3.0mm.
It in the above technical solution, between the chip bench and the reaction chamber and water-cooled platform of MPCVD device is being mutually solely
Vertical structure.
In the above technical solution, the chip bench includes for placing the center groove of deposition substrate, annular outer
Portion, annular inner bulge, the annular groove between interior outside bulge and go out the outer surface on the outside of portion positioned at annular outer out.
In the above technical solution, the height that the annular outer goes out portion is greater than the height of annular inner bulge.
In the above technical solution, the bottom surface of the center groove and the bottom surface of annular groove be not in same level.
In the above technical solution, the thickness of the deposition substrate is greater than the depth of center groove.
In the above technical solution, its upper surface goes out the height in portion than annular outer after deposition substrate merging center groove
Low, the height than annular inner bulge is high.
In the above technical solution, the outer surface that the annular outer goes out portion is clinoplain or arcwall face.
In the above technical solution, the normal direction of the clinoplain or arcwall face is towards the outside of chip bench.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
(1) in the present invention, chip bench is weakened well using the simple designs that annular outer goes out portion and annular inner bulge
Edge effect effectively improves the uniformity of MPCVD device reaction cavity internal electric field and plasma distribution, improves prepared
The uniformity and quality of diamond film；
(2) in the present invention, chip bench passes through design annular groove and plagiohedral/cabochon outer surface (normal direction direction
On the outside of chip bench) impurity that is effectively prevented chip bench non-deposited Area generation is sputtered onto deposition substrate and pollutes diamond film,
Improve the purity and quality of prepared diamond film；
(3) in the present invention, the design of chip bench independently of reaction cavity and water-cooled platform, have it is easy to use, can individually adjust
The advantages of section structure and size.It is suitable for the diamond film for preparing different size specification, only needs individually to change substrate at this time
The structure size of platform haves no need to change reaction cavity and water-cooled platform；
(4) in the present invention, the design of chip bench is suitably applied different microwave frequencies (915MHz/2450MHz), difference instead
The MPCVD device for answering cavity size solves electric field and plasma distribution uniformity problem in large scale MPCVD device,
It is suitable for preparing diamond membrane with large area, and the uniformity of prepared diamond film and quality are good；
The present invention is ingenious in design, and structure is simply easily achieved, and production is easy to use and low in cost, has essence outstanding
Property feature and marked improvement, prepare diamond film field in MPCVD method and be suitble to large-scale promotion application.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is the structural schematic diagram of chip bench of the present invention；
Fig. 2 is the Raman spectrum of diamond film prepared by the embodiment of the present invention；
Fig. 3 is the film thickness distribution comparison diagram of diamond film prepared by the embodiment of the present invention and comparative example；
Fig. 4 is the Raman spectrum of diamond film prepared in comparative example；
Wherein: 1 be annular outer go out portion, 2 be annular inner bulge, 3 be center groove, 4 be between interior outside bulge it
Between annular groove, 5 be located at annular outer go out the outer surface on the outside of portion.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
As shown in Figure 1, the chip bench include for placing the center groove of deposition substrate, annular outer goes out portion, annular in
Protrusion, the annular groove between interior outside bulge and the outer surface on the outside of outside bulge.
Chip bench generallys use the good material of the heating conductions such as molybdenum, tungsten, height 15-30mm, and chip bench diameter is
50-250mm。
Center groove considers the thermal expansion coefficient difference of deposition substrate and chip bench for placement and pin deposition substrate,
Its diameter is 1.0-1.5mm bigger than basal diameter, it is ensured that deposition substrate can be successfully placed and taken out.The depth ratio of center groove
The small 0.3-1.0mm of the thickness of deposition substrate, its upper surface (growing surface) is slightly above the upper of center groove after deposition substrate merging
Along horizontal line.
Annular outer go out portion height be chip bench height, height is 1-3mm bigger than the height of annular inner bulge,
Deposition substrate merging center groove after its upper surface (growing surface) than annular outer go out portion on it is 0.5- low along horizontal line
2.0mm.It is 10-25mm that annular outer, which goes out portion at a distance from annular inner bulge,.
The width of annular inner bulge is 1.5-2.5mm, and height is the height on edge in center groove.
Annular groove depth between interior outside bulge is 3-8mm, to avoid the impurity sputtering generated in groove
To the diamond film of deposition substrate growing surface pollution preparation.The width of annular groove is the distance of interior outside bulge, is 10-
25mm。
Going out the outer surface on the outside of portion positioned at annular outer is clinoplain or arcwall face, and normal direction is towards chip bench
Outside can effectively avoid the growing surface that the impurity generated at the surface is splashed to deposition substrate.
The chip bench can easily be accommodated independently of reaction cavity and water-cooled platform, size.For preparation different size specification
Diamond film can individually change the corresponding construction size of chip bench, have no need to change reaction cavity and water-cooled platform.The chip bench
It is suitable for preparing diameter being 10-150mm, the diamond film with a thickness of 0.1-3.0mm.
Using chip bench of the present invention, the side of diamond film is prepared using MPCVD method
Method, comprising the following steps:
(1) reaction chamber for opening MPCVD device, chip bench of the invention is placed on water-cooled platform, after surface preparation
Deposition substrate merging chip bench center groove in.
(2) reaction chamber is closed, the air pressure for being evacuated to reaction chamber is 0.1-1.0Pa.
(3) high-purity hydrogen, mass flow 500-6000sccm, when reaction chamber air pressure is 500-3000Pa are passed through
When, open microwave input and regulation power be 1-3kW, microwave frequency 915MHz/2450MHz, build-up of luminance generate plasma.
(4) continue to be passed through hydrogen, mass flow 500-6000sccm adjusts reaction chamber air pressure to 10-15kPa, together
Step section microwave input power starts to be passed through carbon appropriate hydrocarbon gas (such as first when deposition substrate temperature reaches 700-800 DEG C to 5-75kW
Alkane, mass flow 5-100sccm), make diamond in deposition substrate surface forming core, nucleated time is 15-40 minutes.
(5) various process parameters for adjusting MPCVD device carry out the preparation of diamond film, and wherein microwave input power is 5-
75kW, reaction chamber air pressure are 10-20kPa, deposition substrate temperature is 700-1000 DEG C.
(6) under above-mentioned technological parameter, the deposition velocity of diamond film was 1-15 μm/hour, by life in 8-250 hours
It is long, obtain the diamond film with a thickness of 0.1-3.0mm.
In order to further make comparison to the solution of the present invention and existing technical solution, the preparation of following two example is carried out
Diameter of phi 50mm diamond film:
Using this programme:
Step 1 designs suitable chip bench.Chip bench such as Fig. 1 shows that material is molybdenum, and structure size is as follows: chip bench is straight
Diameter 120mm, chip bench height 15.9mm, center groove diameter 51.3mm, center groove depth 2.7mm, annular inner bulge
Width is 2mm, the height of annular inner bulge is 14mm, and the annular groove width between interior outside bulge is 13mm, ring
Connected in star depth is 4.3mm, and going out the outer surface on the outside of portion positioned at annular outer is arcwall face.
Step 2 opens the reaction chamber of MPCVD device, and above-mentioned chip bench is placed on water-cooled platform, is 50mm, thickness by diameter
Degree is that the deposition substrate of 3mm is put into the center groove of chip bench.
Step 3 closes reaction chamber, and the air pressure for being evacuated to reaction chamber is 0.5Pa.It is passed through high-purity hydrogen, quality stream
Amount is 4000sccm, when reaction chamber air pressure rises to 3kPa, opens microwave input and regulation power is 3kW, microwave frequency is
915MHz, build-up of luminance generate plasma.
Step 4 continues to be passed through hydrogen, and mass flow 4000sccm is adjusted in synchronism reaction chamber air pressure and microwave input
Power, the two are respectively increased to 11kPa, 20kW, start to be passed through methane, quality stream when deposition substrate temperature reaches 700 DEG C
Amount is 80sccm, makes diamond in deposition substrate surface forming core, and nucleated time is 30 minutes.
The technological parameter that step 5 adjusts MPCVD device carries out the preparation of diamond film, and wherein microwave input power is
26kW, reaction chamber air pressure are 14kPa, deposition substrate temperature is 850 DEG C.Under above-mentioned technological parameter, by life in 200 hours
It is long, it obtains with a thickness of 1.68mm, the diamond film that diameter is 50mm.
Raman analysis is carried out to above-mentioned prepared diamond film, Raman spectrogram is as shown in Fig. 2, Raman spectrum only exists
1332 cm of wavelength-1There is unique diamond characteristic peak at place, and has very high relative intensity, illustrates diamond film purity
It is high.
Diamond film film thickness distribution prepared by the present embodiment is tested, is equidistantly taken in diamond film diametrical direction
20 points from left to right measure the film thickness of each point, measure its film thickness distribution as shown in embodiment film thickness distribution curve in Fig. 3,
Diamond film the thickness uniformity prepared by the present embodiment is 3.6% in figure, is had good uniformity.
And the prior art is compared again, diameter of phi 50mm diamond film is prepared using simple circle dish type chip bench:
The design of step 1 chip bench.Chip bench material is molybdenum, chip bench diameter 120mm, chip bench height 11.3mm.
Step 2 opens the reaction chamber of MPCVD device, and above-mentioned circular disc substrate platform is placed on water-cooled platform, is by diameter
50mm, the center that chip bench is placed on a thickness of the deposition substrate of 3mm.
Step 3- step 5 in step 3- step 5 and above-described embodiment is consistent, and under same process Parameter Conditions
Prepare diamond film.By growth in 200 hours, obtain with a thickness of 1.70mm, the diamond film that diameter is 50mm.
The Raman spectrogram of diamond film prepared by comparative example is as shown in Figure 4.The Raman spectrum of Fig. 4 is gone back in addition to diamond peak
There are graphite impurities peak, show in comparative example that the purity of prepared diamond film is lower, inferior quality.
Divide using the film thickness distribution of diamond film prepared by same method measurement comparative example, and by the film thickness of itself and embodiment
Cloth compares, and diamond film uniformity prepared by the comparative example that can visually see is poor, as shown in Figure 3.It is compared in Fig. 3
The thickness uniformity of diamond film prepared by example is 7.8%, and uniformity, which is significantly worse than in embodiment, uses chip bench system of the present invention
Standby diamond film.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (9)
1. a kind of method for preparing diamond film using MPCVD method, it is characterised in that including following
Step:
Step 1: the reaction chamber of MPCVD device is opened, chip bench is placed on water-cooled platform, by the deposition base after surface preparation
Bottom is placed in the center groove of chip bench；
Step 2: closing reaction chamber, and the air pressure for being evacuated to reaction chamber is 0.1-1.0Pa；
Step 3: high-purity hydrogen, mass flow 500-6000sccm, when reaction chamber air pressure is 500-3000Pa are passed through
When, open microwave input and regulation power be 1-3kW, microwave frequency 915MHz/2450MHz, build-up of luminance generate plasma；
Step 4: continuing to be passed through hydrogen, mass flow 500-6000sccm, adjusts reaction chamber air pressure to 10-15kPa, together
Step section microwave input power starts to be passed through carbon appropriate hydrocarbon gas when deposition substrate temperature reaches 700-800 DEG C, makes gold to 5-75kW
For hard rock in deposition substrate surface forming core, nucleated time is 15-40 minutes；
Step 5: the various process parameters for adjusting MPCVD device carry out the preparation of diamond film, and wherein microwave input power is 5-
75kW, reaction chamber air pressure are 10-20kPa, deposition substrate temperature is 700-1000 DEG C；
It is mutually independent structure between the chip bench and the reaction chamber and water-cooled platform of MPCVD device.
2. a kind of side for preparing diamond film using MPCVD method according to claim 1
Method, it is characterised in that under above-mentioned technological parameter, the deposition velocity of diamond film was 1-15 μm/hour, by 8-250 hours
Growth, obtains the diamond film with a thickness of 0.1-3.0mm.
3. a kind of side for preparing diamond film using MPCVD method according to claim 1
Method, it is characterised in that the chip bench include for placing the center groove of deposition substrate, annular outer goes out portion, annular it is projecting inward
Portion, the annular groove between interior outside bulge and go out the outer surface on the outside of portion positioned at annular outer.
4. a kind of side for preparing diamond film using MPCVD method according to claim 3
Method, it is characterised in that the height that the annular outer goes out portion is greater than the height of annular inner bulge.
5. a kind of side for preparing diamond film using MPCVD method according to claim 3
Method, it is characterised in that the bottom surface of the center groove and the bottom surface of annular groove be not in same level.
6. a kind of side for preparing diamond film using MPCVD method according to claim 3
Method, it is characterised in that the thickness of the deposition substrate is greater than the depth of center groove.
7. a kind of according to claim 3 or 6 prepare diamond film using MPCVD method
Method, it is characterised in that its upper surface is lower than the height that annular outer goes out portion after deposition substrate is placed in center groove, than in annular
The height of protrusion is high.
8. a kind of side for preparing diamond film using MPCVD method according to claim 3
Method, it is characterised in that the outer surface that the annular outer goes out portion is clinoplain or arcwall face.
9. a kind of side for preparing diamond film using MPCVD method according to claim 8
Method, it is characterised in that the normal direction of the clinoplain or arcwall face is towards the outside of chip bench.
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| CN109972116B (en) * | 2017-12-28 | 2021-03-23 | 深圳先进技术研究院 | Diamond tube and preparation method thereof |
| CN111593317A (en) * | 2020-06-19 | 2020-08-28 | 中国科学院合肥物质科学研究院 | Preparation method of first wall material plated with diamond film on surface |
| CN111979579B (en) * | 2020-08-24 | 2021-11-09 | 哈尔滨工业大学 | Plasma gathering device for high-speed growth of chemical vapor deposition single crystal diamond |
| CN114807907A (en) * | 2022-05-05 | 2022-07-29 | 南方科技大学 | MPCVD carrier and method for depositing diamond coating on surface of cutter |
| CN116254523B (en) * | 2023-02-17 | 2024-02-20 | 北方工业大学 | 915MHz microwave plasma chemical vapor deposition device with high tuning sensitivity |
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| JPH0827576A (en) * | 1994-07-18 | 1996-01-30 | Canon Inc | Formation of diamond film |
| CN100494510C (en) * | 2007-01-11 | 2009-06-03 | 武汉理工大学 | Method for synthesizing diamond film under low-temperature by micro-wave and plasma |
| CN101864560B (en) * | 2010-05-24 | 2011-10-12 | 北京科技大学 | High power microwave plasma diamond film deposition device |
| CN202936477U (en) * | 2012-11-15 | 2013-05-15 | 牡丹江师范学院 | Device for growing diamond thick film |
| CN103911596B (en) * | 2014-02-27 | 2016-07-06 | 武汉工程大学 | A kind of device preparing diamond film and use the method that this device prepares diamond film |
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