CN102409291A - Method and device for preparing diamond film doped with ultrafine nano-structural metal particles - Google Patents
Method and device for preparing diamond film doped with ultrafine nano-structural metal particles Download PDFInfo
- Publication number
- CN102409291A CN102409291A CN2011103672632A CN201110367263A CN102409291A CN 102409291 A CN102409291 A CN 102409291A CN 2011103672632 A CN2011103672632 A CN 2011103672632A CN 201110367263 A CN201110367263 A CN 201110367263A CN 102409291 A CN102409291 A CN 102409291A
- Authority
- CN
- China
- Prior art keywords
- base material
- laser
- diamond thin
- motor
- graphite target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 84
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000002923 metal particle Substances 0.000 title claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 43
- 239000010439 graphite Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 238000009434 installation Methods 0.000 claims description 11
- 239000004606 Fillers/Extenders Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 6
- 230000006835 compression Effects 0.000 abstract description 6
- 238000007906 compression Methods 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 6
- 239000013077 target material Substances 0.000 abstract description 6
- 230000007704 transition Effects 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 abstract 2
- 238000005299 abrasion Methods 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003245 working effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- -1 heating unit Substances 0.000 description 1
- 244000239634 longleaf box Species 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
The invention relates to a method and a device for preparing a diamond film doped with ultrafine nano-structural metal particles. The device for preparing the diamond film doped with the metal particles comprises a control system, a target material system, a workpiece control system and an auxiliary system. The method comprises the following steps of: focusing strong laser emitted by a high-power pulse laser device on the surface of a high-purity graphite target material under vacuum; inducing a large quantity of plasmas by using high-energy laser to bombard the surface of a base material which is uniformly heated in advance at a high speed; and performing rapid phase transition on the surface of the base material to form the diamond film. Laser emitted by a quasimolecule laser device is focused on a metal target material, a large quantity of plasmas consisting of a large quantity of metal particles are induced on the surface of the metal target material by using high-energy-density laser to bombard the surface of the prepared diamond film, and gaps on the surfaces of the particles of the diamond film are effectively and tightly filled by a large number of metal particles to form a uniform metal film. By the method and the device, the surface of the diamond film is modified, and the compression strength and the abrasion resistance of the diamond film are improved.
Description
Technical field
The present invention relates to the artificial diamond thin field of making, refer in particular to a kind of diamond thin preparation method and device of the superfine nano structural metal particle that mixes, be particularly useful for preparing large-area diamond thin.
Background technology
Diamond thin has many-sided premium properties; The wear resistance of becoming reconciled like high hardness; Fabulous chemicalstability and high thermal conductivity; And performance such as high temperature resistant and radioprotective and enjoy people's attention, diamond thin has important effect because of its numerous excellent properties in many industry and new technical field.Now the existing several different methods of people prepares diamond thin, and Preliminary Applications at aspects such as mechanical, electrical, light, sound.
Nineteen fifty-five, human graphite such as the Bundy of GE are as carbon source, and as catalyzer synthetic first artificial diamond under the condition of high voltage of the high temperature of 1500K and 8GPa, this method is also claimed high pressure menstruum method with transition metal such as Fe, Ni, Co.1961, people directly changed into diamond with graphite under ultra-high voltage through 30GPa and the hot conditions of 1500K under the situation that does not adopt catalyzer.Since 1974; People such as the Setaka of Japan, Matsumoto adopt methods such as hot filament, microwave and direct-current discharge to excite carbonaceous gass such as CH4; On the base material of diamond seed and non-diamond, carry out the research of diamond film; After preparing diamond thin, people have developed multiple low pressure gas phase deposition method, all successfully prepare diamond thin.Low-pressure vapor phase diamond synthesis technology can be divided into following three types: the firstth, and chemical vapor deposition (CVD); Second type is physical vapor deposition (PVD); The 3rd type is chemical vapor transportation deposition (CVT).According to the difference of mode of excitation, the CVD technology mainly is divided into preparing methods such as hot-wire chemical gas-phase deposition, plasma activated chemical vapour deposition, combustion flame chemical vapour deposition.The equipment that utilizes plasma to prepare film in addition also becomes a kind of having great application prospect, and is making progress aspect the preparation diamond thin like dc plasma jet.
The above-mentioned various methods that prepare diamond thin exist equipment huge, and control is complicated, the diamond thin thinner thickness of preparation and film and the lower problem of base material bonding strength, because of these drawbacks limit the industrialized popularization of preparation diamond thin.While is along with the widespread use of industries such as the processing of diamond cutter modern machine, building decoration; People have proposed increasingly high requirement to ultimate compression strength, end-use performance and the work-ing life of cutter, and therefore the surface-treated to large-area diamond film seems very important.
Summary of the invention
The objective of the invention is deficiency, a kind of diamond thin preparation method of the superfine nano structural metal particle that mixes is provided to above technology.The light laser that this method innovation adopts the high power pulsed laser device to send focuses on induces a large amount of plasma bodys to bombard the substrate surface of even heating in advance at a high speed on the graphite target; Form diamond thin at substrate surface; Simultaneously by excimer laser to diamond thin doping metals particle; Realize the surface-treated of diamond thin, strengthened the ultimate compression strength and the wear resistance of diamond thin.The reaction yield that this method prepares diamond thin is high, and thin film layer purity is high, can realize robotization, and is safe and reliable, especially can prepare large-area diamond thin and can also realize the diamond film surface modification simultaneously.
The diamond thin of doping superfine nano structural metal particle prepares concrete grammar and is: the light laser that the high power pulsed laser device sends sees through high pressure resistant glass window B through the collimator and extender mirror and focuses on the high purity graphite target material surface under the vacuum condition; Graphite target is with the certain speed rotation; High-octane induced with laser goes out a large amount of plasma bodys and bombards the substrate surface of even heating in advance at a high speed, forms diamond thin fast at substrate surface.Traverser makes base material and target be in different relative positions, thereby realizes the large-area diamond thin of preparation.The laser line focus lens A that excimer laser sends sees through high pressure resistant glass window A and focuses on the metal targets with the certain speed autobiography; The plasma body that the metallics by a large amount of that the laser of high-energy-density goes out at the metal targets spatial induction constitutes bombards the diamond film surface that has prepared at a high speed; A large amount of metallicss is closely filled up the slit of diamond thin particle surface effectively; Formed the layer of even metallic membrane; Thereby realized the modification of diamond film surface, improved the performance such as ultimate compression strength, wear resistance of diamond thin.Carbon atom generation chemical reaction generation metallic carbide of a large amount of charged particle and diamond film surface in the plasma body simultaneously; Formed and combined firm transition layer; Improve the bonding strength between metallic membrane and the diamond thin, prolonged the work-ing life of mf.
The inventive system comprises system, target system, workpiece system and subsystem.
Described system comprises: computingmachine, digitial controller and laser controller.The digitial controller upper end links to each other with computingmachine, and the lower end links to each other with laser controller, and laser controller links to each other with excimer laser with the high power pulsed laser device respectively.Computer control motor A and motor B control laser controller and worktable respectively through digitial controller simultaneously.Laser controller control high power pulsed laser device and excimer laser.
Described target system comprises: rotating base stationary installation, rotating base A, motor A, metal targets support, metal targets, rotating base B, motor B, graphite target support and graphite target.The rotating base stationary installation is fixed on the top, top of airtight working chamber.The metal targets support is used for fixing metal targets, and links to each other with the rotation axis of motor A, and motor A rotates and drives the metal targets rotation, and motor A is fixed on the rotating base A, and rotating base A is installed in the following left side of rotating base stationary installation.The graphite target support is used for fixing graphite target, and links to each other with the rotation axis of motor B, and motor B rotates and drives the graphite target rotation, and motor B is fixed on the rotating base B, and rotating base B is installed in the following right side of rotating base stationary installation.Rotating base A becomes left-right symmetric to distribute on the rotating base stationary installation with rotating base B.Come to regulate respectively the angle on metal targets and graphite target and the substrate surface horizontal direction through rotation rotating base A and rotating base B.
Described workpiece system comprises: computingmachine, digitial controller, base material, heating unit, base material fixing device and worktable.Base material be clamped on the heating unit and and heating unit be fixed on the base material fixing device together.Computer controlled refrigerating/heating apparatus, digitial controller through control worktable regulate base material and and target between relative position.
Described subsystem comprises: collimator and extender mirror, vacuum pump, TP, temperature indicator, pressure transmitter and pressure display unit.The collimator and extender mirror is on the right of high pressure resistant glass window B, and described collimator and extender mirror comprises condenser lens B and concavees lens.Vacuum pump is positioned at the bottom righthand side of airtight working chamber.TP is placed in the base material left side and links to each other with the outer temperature indicator of airtight working chamber, and TP and temperature indicator are respectively applied for the working temperature of measuring and observing base material.Pressure transmitter is positioned at the right lower quadrant of airtight working chamber and links to each other with the outer pressure display unit of airtight working chamber, and pressure transmitter and pressure display unit are respectively applied for measures and observe the pressure in the airtight working chamber.
Characteristic of the present invention must realize under specific processing condition that its processing condition are 2mm～3mm for the base material upper surface to metal targets and graphite target vertical range bottom; Described base material is a silicon-base alloy, and described metal targets is the titanium or the nickel of content 99.9%, and described graphite target is the graphite of content 99.99%; The rotating speed of motor A and motor B is respectively 6r/min and 10r/min; Angle on metal targets and graphite target and the substrate surface horizontal direction is respectively 133 °～137 ° and 43 °～47 °; The working temperature of base material is 200 ℃～250 ℃; Pressure in the airtight working chamber is 1 * 10
-3Pa ~ 5 * 10
-3Pa; The pulsewidth of high power pulsed laser device is 20ns, pulse-repetition frequency 50Hz, and power density is 10
9W/cm
2The pulsewidth of excimer laser is 25ns, and pulse-repetition is 10Hz, and energy density is 3.0J/cm
2
The innovation of the present invention's technology; It is huge to be to have overcome prior art equipment; Shortcomings such as control is complicated, and the diamond thin thinner thickness of preparation and thickness distribution are inhomogeneous have been prepared the uniform diamond thin of large-area thickness distribution; Realize the modification of diamond film surface simultaneously, obtained the diamond thin of doping superfine nano structural metal particle.The light laser that the high power pulsed laser device sends focuses on and induces a large amount of plasma body high speed bombarding base material surfaces on the high purity graphite target material surface, forms diamond thin in the substrate surface fast deposition.Through heating unit base material is carried out even heating, the uniform distribution of substrate surface temperature has been created favourable condition to depositing large-area, high-quality diamond thin, makes the diamond thin thickness distribution even, has improved the conjugation of diamond thin and base material.The plasma body that the metallics by a large amount of that the laser that excimer laser sends goes out at the metal targets spatial induction constitutes bombards the diamond film surface that has prepared at a high speed; Not only closely fill up the slit of diamond thin particle surface effectively; And the carbon atom generation chemical reaction of a large amount of charged particle and diamond film surface generates metallic carbide in the plasma body; Formed and combined firm transition layer, improved the bonding strength between metallic membrane and the diamond thin, prolonged the work-ing life of diamond thin; Improved ultimate compression strength and wear resistance, this has very important meaning to the application of diamond thin such as diamond cutter etc.
The inventive method practical implementation step:
A. use absolute ethyl alcohol and washed with de-ionized water substrate surface, to remove the pollutent on surface;
B. be clamped in pretreated base material on the heating unit, metal targets and graphite target are separately fixed on metal targets support and the graphite target support;
C. rotate rotating base A and rotating base B and regulate the angle on metal targets and graphite target and the substrate surface horizontal direction respectively;
D. stick TP in substrate side, traverser regulates substrate surface to graphite target vertical range bottom.Vacuum pump is taken out the gas in the airtight working chamber, and computer controlled refrigerating/heating apparatus is to carrying out the base material even heating;
E. open motor B-source and high power pulsed laser device, parameters such as laser energy, PW are set through laser controller.The high power pulsed laser device sends on the graphite target that light laser focuses on rotation, and induces a large amount of plasma body high speed bombarding base material surfaces, at substrate surface formation of deposits diamond thin.
F. close motor B and high power pulsed laser device, regulate worktable to suitable position.Open motor A and excimer laser, the parameter of excimer laser is set.Excimer laser sends laser focusing on metal targets, and the plasma body that the metallics by a large amount of that laser goes out at the metal targets spatial induction constitutes bombards the diamond film surface that has prepared at a high speed, has formed the layer of even metallic membrane.Question response is closed all power supplys after accomplishing, and takes off base material.
The bright advantage of this law is following:
1. the diamond film layer purity height and the diamond thin thicker of the inventive method preparation, film and base material bonding strength height;
2. the inventive method can prepare large-area diamond thin, and the diamond thin thickness distribution is even;
3. and data by MoM and MEI, the doped diamond film ultimate compression strength of the inventive method preparation is high, wear resistance is good;
4. the inventive method prepares the reaction yield height of diamond thin, and is pollution-free;
5. this method can realize robotization, and control is simple, and is safe and reliable.
Description of drawings
Fig. 1: the diamond thin preparing method's of doping superfine nano structural metal particle schematic diagram of device.
Label in the accompanying drawing: 1. pressure transmitter; 2. pressure display unit; 3. temperature indicator; 4. excimer laser; 5. condensing lens A; 6. high pressure resistant glass window A; 7. rotating base A; 8. motor A; 9. metal targets support; 10. metal targets; 11. base material; 12. TP; 13. base material fixing device; 14. worktable; 15. rotating base stationary installation; 16. rotating base B; 17. motor B; 18. graphite target support; 19. graphite target; 20. plasma body; 21. airtight working chamber; 22. high pressure resistant glass window B; 23. laser beam; 24. diamond thin; 25. heating unit; 26. computingmachine; 27. collimator and extender mirror; 28. condenser lens B; 29. concavees lens; 30. high power pulsed laser device; 31. vacuum pump; 32. digitial controller; 33. laser controller.
Embodiment
Specify the working condition of the method and apparatus that the present invention proposes below in conjunction with accompanying drawing and use-case, but be not used for limiting the present invention.
Instance 1
Surface with absolute ethyl alcohol and washed with de-ionized water silicon-base alloy; Be clamped in the silicon-base alloy after cleaning on the heating unit 25; Be separately fixed at metal targets 10 and graphite target 19 on metal targets support 9 and the graphite target support 18 then; It is 135 ° and 45 ° that adjusting rotating base A 7 makes the angle on metal targets 10 and graphite target 19 and the silicon-base alloy surface level direction with rotating base B16; After TP 12 is sticked in the side of silicon-base alloy, regulate the position of worktable 14, making the silicon-base alloy upper surface is 2.5mm to graphite target 19 vertical range bottom.Take out the gas in the airtight working chamber 21 with vacuum pump 31, observe pressure display unit 2, press in making to reach 3 * 10
-3Pa, temperature indicator 3 is observed in 25 pairs of silicon-base alloy heating of computingmachine 26 control heating units; Making the silicon-base alloy temperature is 200 ℃; Treat to open motor B17 power supply and high power pulsed laser device 30 behind the silicon-base alloy temperature-stable, regulate the parameter of high power pulsed laser device 30, pulsewidth is 20 ns; Pulse-repetition frequency 50Hz, power density is 10
9W/cm
2High power pulsed laser device 30 sends light laser and focuses on the graphite target 19 that rotational velocity is 10r/min through high pressure resistant glass window B22 through collimator and extender mirror 27; And induce a large amount of plasma body 20 to bombard the silicon-base alloy surface at a high speed, form diamond thin 24 at the silicon-base alloy surface deposition.Close motor B17 and high power pulsed laser device 30, regulate worktable 14 to suitable position.Open motor A8 and excimer laser 4, through laser controller 33 parameter is set, pulsewidth is 25ns, and pulse-repetition is 10Hz, and energy density is 3.0J/cm
2Excimer laser 4 sends laser line focus lens A5 and focuses on the metal targets 10 that rotational velocity is 6r/min; The plasma body that the metallics by a large amount of that laser goes out at metal targets 10 spatial inductions constitutes bombards diamond thin 24 surfaces that prepared at a high speed, has formed layer of metal film.Question response is closed all power supplys after accomplishing, and takes off silicon-base alloy.
Claims (9)
1. diamond thin preparation method of superfine nano structural metal particle that mixes is characterized in that step is:
A. use absolute ethyl alcohol and washed with de-ionized water base material (11) surface;
B. be clamped in pretreated base material (11) on the heating unit (25), metal targets (10) and graphite target (19) are separately fixed on metal targets support (9) and the graphite target support (18);
C. rotate rotating base A (7) and rotating base B (16) and regulate the angle on metal targets (10) and graphite target (19) and base material (11) the surface level direction respectively;
D. stick TP in base material (11) side; Traverser (14) regulates base material (11) surface to graphite target (19) vertical range bottom; Vacuum pump (31) is taken out the gas in the airtight working chamber (21), and computingmachine (26) control heating unit (25) is to carrying out base material (11) even heating;
E. open motor B (17) power supply and high power pulsed laser device (30); Through laser controller (33) parameters such as laser energy, PW are set; High power pulsed laser device (30) sends on the graphite target (19) that light laser (23) focuses on rotation; And induce a large amount of plasma body (20) high speed bombarding base material (11) surface, form diamond thin (24) at base material (11) surface deposition;
F. close motor B (17) and high power pulsed laser device (30), regulate worktable (14) to suitable position;
Open motor A (8) and excimer laser (4); The parameter of excimer laser (4) is set, and excimer laser (4) sends laser focusing on metal targets (10), and the plasma body that the metallics by a large amount of that laser goes out at metal targets (10) spatial induction constitutes bombards diamond thin (24) surface that has prepared at a high speed; Formed the layer of even metallic membrane; Question response is closed all power supplys after accomplishing, and takes off base material.
2. according to the diamond thin preparation method of claim 1 described a kind of superfine nano structural metal particle that mixes, it is characterized in that the base material upper surface is 2mm～3mm to metal targets and graphite target vertical range bottom.
3. according to the diamond thin preparation method of claim 1 or 2 described a kind of superfine nano structural metal particles that mix; It is characterized in that; Described base material is a silicon-base alloy, and described metal targets is the titanium or the nickel of content 99.9%, and described graphite target is the graphite of content 99.99%.
4. according to the diamond thin preparation method of claim 1 or 2 described a kind of superfine nano structural metal particles that mix, it is characterized in that the rotating speed of motor A and motor B is respectively 6r/min and 10r/min.
5. according to the diamond thin preparation method of claim 1 or 2 described a kind of superfine nano structural metal particles that mix; It is characterized in that the angle on metal targets and graphite target and the substrate surface horizontal direction is respectively 133 °～137 ° and 43 °～47 °.
6. according to the diamond thin preparation method of claim 1 or 2 described a kind of superfine nano structural metal particles that mix, it is characterized in that the working temperature of base material is 200 ℃～250 ℃.
7. according to the diamond thin preparation method of claim 1 or 2 described a kind of superfine nano structural metal particles that mix, it is characterized in that the pressure in the airtight working chamber is 1 * 10
-3Pa ~ 5 * 10
-3Pa.
8. according to the diamond thin preparation method of claim 1 or 2 described a kind of superfine nano structural metal particles that mix, it is characterized in that the pulsewidth of high power pulsed laser device is 20ns, pulse-repetition frequency 50Hz, power density is 10
9W/cm
2The pulsewidth of excimer laser is 25ns, and pulse-repetition is 10Hz, and energy density is 3.0J/cm
2
9. implement the diamond thin preparing method's of the described a kind of superfine nano structural metal particle that mixes of claim 1 device; It is characterized in that; Form by system, target system, workpiece system and subsystem; Its system comprises computingmachine (26), digitial controller (32) and laser controller (33); Digitial controller (32) links to each other with computingmachine (26) respectively and links to each other with laser controller (33), and laser controller (33) links to each other with excimer laser (4) with high power pulsed laser device (30) respectively; The target system comprises rotating base stationary installation (15), rotating base A (7), motor A (8), metal targets support (9), metal targets (10), rotating base B (16), motor B (17), graphite target support (18) and graphite target (19); Rotating base stationary installation (15) is fixed on the top, top of airtight working chamber (21); Metal targets support (9) is used for fixing metal targets (10); And link to each other with the rotation axis of motor A (8); Motor A (8) rotates and drives metal targets (10) rotation; Motor A (8) is fixed on the rotating base A (7), and rotating base A (7) is installed in the following left side of rotating base stationary installation (15);
Graphite target support (9) is used for fixing graphite target (19); And link to each other with the rotation axis of motor B (17); Motor B (17) rotates and drives graphite target (19) rotation; Motor B (17) is fixed on the rotating base B (16), and rotating base B (16) is installed in the following right side of rotating base stationary installation (15);
Rotating base A (7) becomes left-right symmetric to distribute on rotating base stationary installation (15) with rotating base B (16); The workpiece system comprises computingmachine (26), digitial controller (32), base material (11), heating unit (25), base material fixing device (13) and worktable (14); Base material (11) be clamped in that heating unit (25) is gone up and and heating unit (25) be fixed on together on the base material fixing device (13); Computingmachine (26) control heating unit (25), digitial controller (32) through control worktable (14) regulate base material and and target between relative position; Subsystem comprises collimator and extender mirror (27), vacuum pump (31), TP (12), temperature indicator (3), pressure transmitter (1) and pressure display unit (2); Collimator and extender mirror (27) is on the right of high pressure resistant glass window B (22); Described collimator and extender mirror (27) comprises condenser lens B (28) and concavees lens (29); Vacuum pump (31) is positioned at the bottom righthand side of airtight working chamber (21); TP (12) is placed in base material (11) left side and links to each other with the outer temperature indicator (3) of airtight working chamber (21), and pressure transmitter (1) is positioned at the right lower quadrant of airtight working chamber (21) and links to each other with the outer pressure display unit (2) of airtight working chamber (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110367263.2A CN102409291B (en) | 2011-11-18 | 2011-11-18 | Method and device for preparing diamond film doped with ultrafine nano-structural metal particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110367263.2A CN102409291B (en) | 2011-11-18 | 2011-11-18 | Method and device for preparing diamond film doped with ultrafine nano-structural metal particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102409291A true CN102409291A (en) | 2012-04-11 |
| CN102409291B CN102409291B (en) | 2014-04-09 |
Family
ID=45911628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110367263.2A Active CN102409291B (en) | 2011-11-18 | 2011-11-18 | Method and device for preparing diamond film doped with ultrafine nano-structural metal particles |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102409291B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103408005A (en) * | 2013-07-29 | 2013-11-27 | 江苏大学 | Device and method for improving preparation efficiency of diamonds |
| CN104593732A (en) * | 2015-01-29 | 2015-05-06 | 张晓军 | System and method of multi-element pulsed laser deposition for synthesizing composite material in batches |
| CN110578131A (en) * | 2019-10-18 | 2019-12-17 | 永固集团股份有限公司 | Laser chemical vapor deposition ceramic layer production line and production process for spherical part of lightning protection device |
| CN113445007A (en) * | 2021-05-28 | 2021-09-28 | 松山湖材料实验室 | Pulsed laser deposition apparatus and method |
| CN114083139A (en) * | 2021-12-31 | 2022-02-25 | 华侨大学 | Processing device and processing method for laser-induced active ion etching diamond |
| CN116813350A (en) * | 2023-05-11 | 2023-09-29 | 清华大学 | Preparation device and method for laser-shock high-pressure coal-made diamond film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11246299A (en) * | 1998-03-04 | 1999-09-14 | Kobe Steel Ltd | Formation of diamond film |
| JP2011099137A (en) * | 2009-11-05 | 2011-05-19 | Fuji Electric Holdings Co Ltd | Method for depositing diamond film |
-
2011
- 2011-11-18 CN CN201110367263.2A patent/CN102409291B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11246299A (en) * | 1998-03-04 | 1999-09-14 | Kobe Steel Ltd | Formation of diamond film |
| JP2011099137A (en) * | 2009-11-05 | 2011-05-19 | Fuji Electric Holdings Co Ltd | Method for depositing diamond film |
Non-Patent Citations (2)
| Title |
|---|
| 《中国优秀博硕士学位论文全文数据库》 20050715 罗飞 "用激光沉积法在金刚石颗粒表面制备金属薄膜" 第30-32页 1-9 , 第3期 * |
| 罗飞: ""用激光沉积法在金刚石颗粒表面制备金属薄膜"", 《中国优秀博硕士学位论文全文数据库》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103408005A (en) * | 2013-07-29 | 2013-11-27 | 江苏大学 | Device and method for improving preparation efficiency of diamonds |
| CN103408005B (en) * | 2013-07-29 | 2015-07-08 | 江苏大学 | Device and method for improving preparation efficiency of diamonds |
| CN104593732A (en) * | 2015-01-29 | 2015-05-06 | 张晓军 | System and method of multi-element pulsed laser deposition for synthesizing composite material in batches |
| CN110578131A (en) * | 2019-10-18 | 2019-12-17 | 永固集团股份有限公司 | Laser chemical vapor deposition ceramic layer production line and production process for spherical part of lightning protection device |
| CN113445007A (en) * | 2021-05-28 | 2021-09-28 | 松山湖材料实验室 | Pulsed laser deposition apparatus and method |
| CN114083139A (en) * | 2021-12-31 | 2022-02-25 | 华侨大学 | Processing device and processing method for laser-induced active ion etching diamond |
| CN114083139B (en) * | 2021-12-31 | 2023-05-05 | 华侨大学 | Processing device and processing method for laser-induced active ion etching diamond |
| CN116813350A (en) * | 2023-05-11 | 2023-09-29 | 清华大学 | Preparation device and method for laser-shock high-pressure coal-made diamond film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102409291B (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102409291A (en) | Method and device for preparing diamond film doped with ultrafine nano-structural metal particles | |
| CN106929828B (en) | Substrate table for preparing diamond film by microwave plasma chemical vapor deposition method | |
| US6258237B1 (en) | Electrophoretic diamond coating and compositions for effecting same | |
| CN102352512B (en) | Method for preparing high-adhesion diamond coating with pulse laser | |
| CN110106483B (en) | Graphite-like particle composite diamond-like coating and preparation method and application thereof | |
| CN107937873B (en) | Carbon-doped transition metal boride coating, carbon-transition metal boride composite coating, preparation method and application thereof, and cutting tool | |
| CN108203090A (en) | A kind of preparation method of graphene | |
| CN104141109B (en) | Method for in-situ synthesis of composite TiC-DLC coating on surface of titanium | |
| CN101457359B (en) | Method for preparing Ti-Si-N nanocrystalline-amorphous composite superhard coating | |
| CN108677144A (en) | A method of it preparing aluminium nitrogen and is co-doped with diamond-like carbon composite film | |
| CN101113516A (en) | Method for preparing nano composite diamond coating | |
| CN107164740A (en) | A kind of method that use MPCVD method prepares diamond film | |
| CN101736323B (en) | Device for preparing boron-doped diamond composite coating on surface of cutter | |
| CN109082647B (en) | Preparation method of DLC protective film on aluminum alloy surface | |
| CN106399949A (en) | Pulse laser deposition system and method for depositing thin film with same | |
| CN105821391A (en) | Controllable and rapid preparation method of selenized tungsten nanosheet thin-film material growing perpendicular to substrate | |
| CN110468381B (en) | High-frequency oscillation pulse magnetron sputtering method | |
| CN102330062A (en) | Preparation method of titanium/nickel nitride nano multilayer film | |
| CN105154833B (en) | The preparation method of Ti TiC graphite composite materials | |
| CN104419927B (en) | Hard alloy cutter and film coating method thereof | |
| CN113774344A (en) | Preparation method of titanium-silicon co-doped amorphous carbon-nitrogen composite film | |
| CN103668061B (en) | A kind of coating apparatus of high adhesion force high rigidity low-friction coefficient diamond-film-like | |
| TW201251566A (en) | Housing and method for making same | |
| CN103352222B (en) | A kind of preparation method of the carbon-base tungsten coating for tokamak device | |
| CN206751920U (en) | A kind of chip bench that diamond film is prepared for MPCVD method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 214522, No. 18, South Mountain Road, Chengbei Park, Jiangsu, Jingjiang Patentee after: Jiangsu University Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: Jiangsu University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171211 Address after: 212005 South Xu Road, Zhenjiang, Zhenjiang, Jiangsu Patentee after: JIANGSU HUIZHI INTELLECTUAL PROPERTY SERVICES Co.,Ltd. Address before: 214522, No. 18, South Mountain Road, Chengbei Park, Jiangsu, Jingjiang Patentee before: Jiangsu University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200623 Address after: No. 159, Chengjiang Middle Road, Jiangyin City, Wuxi City, Jiangsu Province Patentee after: Jiangyin Intellectual Property Operation Co.,Ltd. Address before: No. 101, Nanxu Avenue, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU HUIZHI INTELLECTUAL PROPERTY SERVICES Co.,Ltd. |
|
| DD01 | Delivery of document by public notice | ||
| DD01 | Delivery of document by public notice |
Addressee: Xu Yingying Document name: Notice of amendment |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230329 Address after: 035400 Yangfang Township Zhuangli Industrial Park, Dingxiang County, Xinzhou City, Shanxi Province Patentee after: Shanxi yademas Material Technology Co.,Ltd. Address before: No. 159, Chengjiang Middle Road, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: Jiangyin Intellectual Property Operation Co.,Ltd. |