CN107104047A - The manufacture method of gallium nitride Schottky diode - Google Patents
The manufacture method of gallium nitride Schottky diode Download PDFInfo
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- CN107104047A CN107104047A CN201610099474.5A CN201610099474A CN107104047A CN 107104047 A CN107104047 A CN 107104047A CN 201610099474 A CN201610099474 A CN 201610099474A CN 107104047 A CN107104047 A CN 107104047A
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- gallium nitride
- layer
- oxide layers
- anode
- schottky diode
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 133
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 230000012010 growth Effects 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2229/00—Indexing scheme for semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, for details of semiconductor bodies or of electrodes thereof, or for multistep manufacturing processes therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a kind of manufacture method of gallium nitride Schottky diode, this method includes：Growing gallium nitride cushion and aluminum gallium nitride barrier layer successively on a silicon substrate；Silicon nitride passivation and PETEOS oxide layers are sequentially depositing in aluminum gallium nitride barrier layer；Manufacture the negative electrode of gallium nitride Schottky diode；Manufacture the anode of gallium nitride Schottky diode；Gallium nitride Schottky diode after manufacture anode is made annealing treatment.The shallow trap of anode metal and aluminum gallium nitride near interface is removed, the anode leakage phenomenon of device is reduced, improves the breakdown voltage of device, improve the performance of device.
Description
Technical field
The present embodiments relate to semiconductor device processing technology field, more particularly to a kind of gallium nitride Xiao Te
The manufacture method of based diode.
Background technology
With the increasingly increase of efficiently complete circuit for power conversion and system requirements, with low-power consumption and height
The power device of fast characteristic has attracted increasing concern.Because gallium nitride has wider energy gap,
High electronics saturation drift velocity, higher disruptive field intensity, good heat endurance, corrosion-resistant and radioresistance
Performance, thus gallium nitride under high pressure, high frequency, high temperature, high-power and Flouride-resistani acid phesphatase environmental condition have compared with
Strong advantage.It is the new wide bandgap compound semiconductor material of extensive concern in the world.And gallium nitride Xiao
Special based diode is due to broad stopband and the features such as high electron mobility, making it in high-power and electricity at a high speed
It is widely used in terms of sub- equipment.
Although the features such as gallium nitride Schottky diode has broad stopband and high electron mobility, gallium nitride
In terms of anode leakage and breakdown voltage there be the trap of aluminum-gallium-nitrogen/gallium nitride hetero-junctions in Schottky diode
Very big influence, making the performance of device reduces.
The content of the invention
The embodiment of the present invention provides a kind of manufacture method of gallium nitride Schottky diode, removes anode gold
The shallow trap of category and aluminum gallium nitride near interface, reduces the anode leakage phenomenon of device, improves device
Breakdown voltage, improves the performance of device.
The embodiment of the present invention provides a kind of manufacture method of gallium nitride Schottky diode, including：In silicon lining
Growing gallium nitride cushion and aluminum gallium nitride barrier layer successively on bottom；
Silicon nitride passivation and PETEOS oxide layers are sequentially depositing in the aluminum gallium nitride barrier layer；
Manufacture the negative electrode of the gallium nitride Schottky diode；
Manufacture the anode of the gallium nitride Schottky diode；
Made annealing treatment to manufacturing the gallium nitride Schottky diode after the anode.
Further, method as described above, the temperature of the annealing is 400 degrees Celsius, described
The time of annealing is 20 minutes, and the annealing is in nitrogen atmosphere.
Further, method as described above, the negative electrode of the manufacture gallium nitride Schottky diode
Specifically include：
The subregional PETEOS oxide layers in left side are etched, the first oxide layer perforate is formed, described the
The etching silicon nitride passivation forms cloudy until the aluminum gallium nitride barrier layer surface in one oxide layer perforate
Pole contact hole；
In the cathode contacts hole, the cathode contacts hole top and the PETEOS oxide layers
Deposit cathode metal layer；
Metal in the cathode metal layer is evaporated using electron beam technology；
Photoetching is carried out to the cathode metal layer of the PETEOS oxide layers, etching forms negative electrode.
Further, method as described above, the anode of the manufacture gallium nitride Schottky diode
Specifically include：
The subregional PETEOS oxide layers in right side are etched, the second oxide layer perforate is formed, described the
The etching silicon nitride passivation forms sun until the aluminum gallium nitride barrier layer surface in dioxide layer perforate
Pole contact hole；
In the positive contact hole, above the positive contact hole and the PETEOS oxide layers
Deposition anode metal level；
Metal in the anode metal layer is evaporated using electron beam technology；
Anode metal layer to the PETEOS oxide layers carries out photoetching, and etching forms anode.
Further, method as described above, described in the cathode contacts hole, the negative electrode connects
Contact hole top and PETEOS oxide layers deposition cathode metal layer are specially：
It is described in the cathode contacts hole, above the cathode contacts hole and the PETEOS oxide layers
Top is sequentially depositing titanium layer, aluminium lamination, titanium layer and titanium nitride layer using magnetron sputtering membrane process, to be formed
Cathode metal layer.
Further, method as described above, it is described in the positive contact hole, the anode connects
Contact hole top and the PETEOS oxide layers deposition anode metal level are specially：
In the positive contact hole, above the positive contact hole and the PETEOS oxide layers
Titanium nitride layer, titanium layer, aluminium lamination, titanium layer and titanium nitride layer are sequentially depositing using magnetron sputtering membrane process,
To form anode metal layer.
Further, method as described above, it is described on a silicon substrate successively growing gallium nitride cushion and
Aluminum gallium nitride barrier layer is specially：
Using epitaxial growth technology on the silicon substrate growing gallium nitride cushion and aluminum gallium nitride potential barrier successively
Layer.
Further, method as described above, it is described that nitridation is sequentially depositing in the aluminum gallium nitride barrier layer
Silicon passivation layer and PETEOS oxide layers are specially：
Silicon nitride passivation is sequentially depositing in the aluminum gallium nitride barrier layer using the technique of chemical vapor deposition
With PETEOS oxide layers.
The embodiment of the present invention provides a kind of manufacture method of gallium nitride Schottky diode, by silicon substrate
On growing gallium nitride cushion and aluminum gallium nitride barrier layer successively；Nitridation is sequentially depositing in aluminum gallium nitride barrier layer
Silicon passivation layer and PETEOS oxide layers；Manufacture the negative electrode of gallium nitride Schottky diode；Manufacture gallium nitride
The anode of Schottky diode；Gallium nitride Schottky diode after manufacture anode is made annealing treatment.
The shallow trap of anode metal and aluminum gallium nitride near interface is removed, the anode leakage phenomenon of device is reduced,
The breakdown voltage of device is improved, the performance of device is improved.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to reality
The accompanying drawing used required for applying in example or description of the prior art is briefly described, it should be apparent that, under
Accompanying drawing in the description of face is some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative labor, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the flow chart of the manufacture method embodiment one of gallium nitride Schottky diode of the present invention；
In silicon lining in the manufacture method for the gallium nitride Schottky diode that Fig. 2 provides for the embodiment of the present invention one
Structural representation on bottom successively after growing gallium nitride cushion and aluminum gallium nitride barrier layer；
In gallium aluminium in the manufacture method for the gallium nitride Schottky diode that Fig. 3 provides for the embodiment of the present invention one
The structural representation after silicon nitride passivation and PETEOS oxide layers is sequentially depositing on nitrogen barrier layer；
In manufacture in the manufacture method for the gallium nitride Schottky diode that Fig. 4 provides for the embodiment of the present invention one
Structural representation after the negative electrode of gallium nitride Schottky diode；
In manufacture in the manufacture method for the gallium nitride Schottky diode that Fig. 5 provides for the embodiment of the present invention one
Structural representation after the anode of gallium nitride Schottky diode；
Nitrogen is manufactured in the manufacture method for the gallium nitride Schottky diode that Fig. 6 provides for the embodiment of the present invention one
Change the flow chart of the negative electrode of gallium Schottky diode；
Formed in the manufacture method for the gallium nitride Schottky diode that Fig. 7 provides for the embodiment of the present invention one cloudy
Structural representation after the contact hole of pole；
Nitrogen is manufactured in the manufacture method for the gallium nitride Schottky diode that Fig. 8 provides for the embodiment of the present invention one
Change the flow chart of the anode of gallium Schottky diode；
Sun is formed in the manufacture method for the gallium nitride Schottky diode that Fig. 9 provides for the embodiment of the present invention one
Structural representation after the contact hole of pole.
Reference：
1- silicon substrate 2- nitride buffer layer 3- aluminum gallium nitride barrier layers
4- silicon nitride passivation 5-PETEOS oxide layer 6- negative electrodes
7- anode 8- cathode contacts hole 9- positive contacts hole
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with this hair
Accompanying drawing in bright embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belongs to the scope of protection of the invention.
Fig. 1 is the flow chart of the manufacture method embodiment one of gallium nitride Schottky diode of the present invention, is such as schemed
Shown in 1, the manufacture method for the gallium nitride Schottky diode that this implementation is provided can be divided into following step
Suddenly.
Step 101, growing gallium nitride cushion 2 and aluminum gallium nitride barrier layer 3 successively on silicon lining 1.
Further, Fig. 2 is the manufacturer for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
Structural representation in method on a silicon substrate successively after growing gallium nitride cushion and aluminum gallium nitride barrier layer, such as
Shown in Fig. 2, in the present embodiment, growing gallium nitride cushion 2 and aluminum gallium nitride gesture successively on silicon substrate 1
Barrier layer 3 is specially：Using epitaxial growth technology on silicon substrate 1 successively growing gallium nitride cushion 2 and
Aluminum gallium nitride barrier layer 3.Specifically, first using epitaxial growth technology on silicon substrate 1 growing gallium nitride
Cushion 2, then grows aluminum gallium nitride barrier layer 3 using epitaxial growth technology on nitride buffer layer 2.
Step 102, silicon nitride passivation 4 and PETEOS oxygen are sequentially depositing in aluminum gallium nitride barrier layer 3
Change layer 5.
Further, Fig. 3 is the manufacturer for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
The structure after silicon nitride passivation and PETEOS oxide layers is sequentially depositing in method in aluminum gallium nitride barrier layer to show
It is intended to, as shown in figure 3, in the present embodiment, silicon nitride passivation is sequentially depositing in aluminum gallium nitride barrier layer 3
Layer 4 and PETEOS oxide layers 5 are specially：Using the technique of chemical vapor deposition in aluminum gallium nitride barrier layer
Silicon nitride passivation 4 and PETEOS oxide layers 5 are sequentially depositing on 3.Specifically, first in aluminum gallium nitride gesture
The process deposits silicon nitride passivation 4 of chemical vapor deposition is used in barrier layer 3, then using chemical gaseous phase
The technique of deposition deposits PETEOS oxide layers 5 on silicon nitride passivation 4.
Step 103, the negative electrode 6 of gallium nitride Schottky diode is manufactured.
Specifically, Fig. 4 is the manufacture method for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
In manufacture gallium nitride Schottky diode negative electrode after structural representation, as shown in figure 4, this implementation
In example, to being sequentially depositing shape after silicon nitride passivation and PETEOS oxide layers in aluminum gallium nitride barrier layer
Into pattern on, the negative electrode 6 of gallium nitride Schottky diode is manufactured, in manufacture gallium nitride schottky two pole
Include forming cathode contacts hole during the negative electrode of pipe, deposit cathode metal layer, cathode metal layer is performed etching
Deng.
Step 104, the anode 7 of gallium nitride Schottky diode is manufactured.
Specifically, Fig. 5 is the manufacture method for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
In manufacture gallium nitride Schottky diode anode after structural representation, as shown in figure 5, this implementation
In example, on the pattern formed after the negative electrode 6 to manufacturing gallium nitride Schottky diode, gallium nitride is manufactured
The anode 7 of Schottky diode, includes forming anode when manufacturing the anode of gallium nitride Schottky diode
Contact hole, deposition anode metal level, is performed etching to anode metal layer.
Step 105, the gallium nitride Schottky diode after manufacture anode 7 is made annealing treatment.
Specifically, in the present embodiment, the temperature and time of annealing is removal anode metal and aluminum gallium nitride
The temperature and time of the shallow trap requirement of near interface.
In the present embodiment, the gallium nitride Schottky diode after manufacture anode 7 is made annealing treatment, moved back
Promote electric charge to enter in shallow trap when fiery, shallow trap is filled, the electricity in trap not retrapping raceway groove
Son, reaches the anode leakage phenomenon for reducing device, improves the effect of the breakdown voltage of device.
In the present embodiment, after the negative electrode and anode of gallium nitride Schottky diode, in addition to gallium nitride
Other follow-up operations of Schottky diode, these operations are same as the prior art, no longer go to live in the household of one's in-laws on getting married one by one herein
State.
The present embodiment provide gallium nitride Schottky diode manufacture method, by silicon substrate 1 according to
Secondary growth nitride buffer layer 2 and aluminum gallium nitride barrier layer 3；Nitrogen is sequentially depositing in aluminum gallium nitride barrier layer 3
SiClx passivation layer 4 and PETEOS oxide layers 5；Manufacture the negative electrode 6 of gallium nitride Schottky diode；Manufacture
The anode 7 of gallium nitride Schottky diode；Gallium nitride Schottky diode after manufacture anode is moved back
Fire processing.The shallow trap of anode metal and aluminum gallium nitride near interface is removed, the anode leakage of device is reduced
Electrical phenomena, improves the breakdown voltage of device, improves the performance of device.
Further, Fig. 6 is the manufacturer for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
The flow chart of the negative electrode of gallium nitride Schottky diode is manufactured in method, as shown in fig. 6, the present embodiment is provided
Gallium nitride Schottky diode manufacture method in, gallium nitride Schottky diode is manufactured in step 103
Negative electrode specifically include following several steps.
Step 103a, etches the subregional PETEOS oxide layers in left side, forms the first oxide layer and opens
Hole, etch silicon nitride passivation layer forms cloudy until aluminum gallium nitride barrier layer surface in the first oxide layer perforate
Pole contact hole 8.
Specifically, Fig. 7 is the manufacture method for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
The middle structural representation formed behind cathode contacts hole, as shown in fig. 7, in the present embodiment, being carved using dry method
Etching technique etches the subregional PETEOS oxide layers in left side, the first oxide layer perforate is formed, first
Etch silicon nitride passivation layer is until aluminum gallium nitride barrier layer surface in oxide layer perforate.First oxide layer perforate
Girth is identical with the girth of the silicon nitride passivation etched away, so that the cathode contacts hole formed
Rectangular cross-section.
Step 103b, in cathode contacts hole 8, the top of cathode contacts hole 8 and PETEOS oxide layers 5
Disposed thereon cathode metal layer.
Further, in the present embodiment, in cathode contacts hole 8, the top of cathode contacts hole 8 and
The disposed thereon cathode metal layer of PETEOS oxide layers 5 is specially：
In cathode contacts hole 8, the top of cathode contacts hole 8 and the top of PETEOS oxide layers 5 use magnetic
Control sputter coating process is sequentially depositing titanium layer, aluminium lamination, titanium layer and titanium nitride layer, to form cathodic metal
Layer.In cathode metal layer, the thickness of titanium layer can be 200 angstroms, and the thickness of aluminium lamination can be 1200
Angstrom, the thickness of titanium nitride layer can be 200 angstroms.
Step 103c, using the metal in electron beam technology evaporation cathode metal level.
Step 103d, photoetching, etching, shape are carried out to the cathode metal layer of the top of PETEOS oxide layers 5
Into negative electrode 6.
Specifically, as shown in figure 4, in the present embodiment, to the upper right region of PETEOS oxide layers 5
Cathode metal layer carry out photoetching, after etching, retain the top cathode contacts hole week of PETEOS oxide layers 5
Enclose the cathode metal layer in region.Cathode metal layer, the moon retained in the upper left of PETEOS oxide layers 5
Cathode metal layer formation negative electrode 6 in the contact hole of pole.
Further, Fig. 8 is the manufacturer for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
The flow chart of the anode of gallium nitride Schottky diode is manufactured in method, as shown in figure 8, in the present embodiment,
At step 104, the anode of manufacture gallium nitride Schottky diode is specifically divided into following steps.
Step 104a, etches the subregional PETEOS oxide layers in right side, forms the second oxide layer and opens
Hole, etch silicon nitride passivation layer forms sun until aluminum gallium nitride barrier layer surface in the second oxide layer perforate
Pole contact hole 9.
Specifically, Fig. 8 is the manufacture method for the gallium nitride Schottky diode that the embodiment of the present invention one is provided
The middle structural representation formed behind positive contact hole, as shown in figure 8, in the present embodiment, being carved using dry method
Etching technique etches the subregional PETEOS oxide layers in right side, the second oxide layer perforate is formed, second
Etch silicon nitride passivation layer is until aluminum gallium nitride barrier layer surface in oxide layer perforate.Second oxide layer perforate
Girth is more than the girth of the silicon nitride passivation etched away, wherein the chi of the second oxide layer perforate
The very little size for being more than the first oxide layer perforate.
Step 104b, in the positive contact hole 9, the top of positive contact hole 9 and PETEOS oxide layers 5
Disposed thereon anode metal layer.
Further, in the present embodiment, in the positive contact hole 9, the top of positive contact hole 9 and
The disposed thereon anode metal layer of PETEOS oxide layers 5 is specially：
Magnetic is used in positive contact hole 9, above positive contact hole 9 and above PETEOS oxide layers 5
Control sputter coating process is sequentially depositing titanium nitride layer, titanium layer, aluminium lamination, titanium layer and titanium nitride layer, to be formed
Anode metal layer.
Step 104c, the metal in anode metal layer is evaporated using electron beam technology.
Step 104d, the anode metal layer to PETEOS oxide layers carries out photoetching, etches, and is formed
Anode 7.
Specifically, as shown in figure 5, in the present embodiment, to the upper left region of PETEOS oxide layers 5
Anode metal layer carry out photoetching, after etching, retain the upper anode contact hole week of PETEOS oxide layers 5
Enclose the anode metal layer in region.Anode metal layer, sun in the reservation of the upper right of PETEOS oxide layers 5
Anode metal layer formation anode 7 in the contact hole of pole.
Preferably, in the present embodiment, in step 105, to the gallium nitride schottky two after manufacture anode 7
When pole pipe is made annealing treatment, the temperature of annealing is 400 degrees Celsius, and the time of annealing is 20
Minute, make annealing treatment in nitrogen atmosphere.
In the present embodiment, the temperature of annealing is 400 degrees Celsius, and the time of annealing is 20 points
Clock, makes annealing treatment in nitrogen atmosphere, can fill anode metal and the shallow trap of aluminum gallium nitride near interface
Divide and remove, further reduce the anode leakage phenomenon of device, improve the breakdown voltage of device, improve
The performance of device.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than right
It is limited；Although the present invention is described in detail with reference to foregoing embodiments, this area it is common
Technical staff should be understood：It can still be repaiied to the technical scheme described in foregoing embodiments
Change, or equivalent substitution is carried out to which part or all technical characteristic；And these are changed or replaced
Change, the essence of appropriate technical solution is departed from the scope of various embodiments of the present invention technical scheme.
Claims (8)
1. a kind of manufacture method of gallium nitride Schottky diode, it is characterised in that including：
Growing gallium nitride cushion and aluminum gallium nitride barrier layer successively on a silicon substrate；
Silicon nitride passivation and PETEOS oxide layers are sequentially depositing in the aluminum gallium nitride barrier layer；
Manufacture the negative electrode of the gallium nitride Schottky diode；
Manufacture the anode of the gallium nitride Schottky diode；
Made annealing treatment to manufacturing the gallium nitride Schottky diode after the anode.
2. according to the method described in claim 1, it is characterised in that the temperature of the annealing is
400 degrees Celsius, the time of the annealing is 20 minutes, and the annealing is in nitrogen atmosphere.
3. method according to claim 2, it is characterised in that manufacture gallium nitride Xiao
The negative electrode of special based diode is specifically included：
The subregional PETEOS oxide layers in left side are etched, the first oxide layer perforate is formed, described the
The etching silicon nitride passivation forms cloudy until the aluminum gallium nitride barrier layer surface in one oxide layer perforate
Pole contact hole；
In the cathode contacts hole, the cathode contacts hole top and the PETEOS oxide layers
Deposit cathode metal layer；
Metal in the cathode metal layer is evaporated using electron beam technology；
Photoetching is carried out to the cathode metal layer of the PETEOS oxide layers, etching forms negative electrode.
4. method according to claim 3, it is characterised in that manufacture gallium nitride Xiao
The anode of special based diode is specifically included：
The subregional PETEOS oxide layers in right side are etched, the second oxide layer perforate is formed, described the
The etching silicon nitride passivation forms sun until the aluminum gallium nitride barrier layer surface in dioxide layer perforate
Pole contact hole；
In the positive contact hole, above the positive contact hole and the PETEOS oxide layers
Deposition anode metal level；
Metal in the anode metal layer is evaporated using electron beam technology；
Anode metal layer to the PETEOS oxide layers carries out photoetching, and etching forms anode.
5. method according to claim 3, it is characterised in that described in the cathode contacts hole
Interior, the cathode contacts hole top and PETEOS oxide layers deposition cathode metal layer are specific
For：
In the cathode contacts hole, above the cathode contacts hole and in the PETEOS oxide layers
Fang Caiyong magnetron sputtering membrane process is sequentially depositing titanium layer, aluminium lamination, titanium layer and titanium nitride layer, to be formed
Cathode metal layer.
6. method according to claim 4, it is characterised in that described in the positive contact hole
Interior, described positive contact hole top and the PETEOS oxide layers deposition anode metal level are specific
For：
In the positive contact hole, above the positive contact hole and the PETEOS oxide layers
Titanium nitride layer, titanium layer, aluminium lamination, titanium layer and titanium nitride layer are sequentially depositing using magnetron sputtering membrane process,
To form anode metal layer.
7. the method according to claim any one of 1-6, it is characterised in that it is described on a silicon substrate
Growing gallium nitride cushion and aluminum gallium nitride barrier layer are specially successively：
Using epitaxial growth technology on the silicon substrate growing gallium nitride cushion and aluminum gallium nitride potential barrier successively
Layer.
8. method according to claim 7, it is characterised in that described in the aluminum gallium nitride potential barrier
Silicon nitride passivation is sequentially depositing on layer and PETEOS oxide layers are specially：
Silicon nitride passivation is sequentially depositing in the aluminum gallium nitride barrier layer using the technique of chemical vapor deposition
With PETEOS oxide layers.
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