CN107101728B - 一种非制冷双色偏振红外探测器及其制造方法 - Google Patents
一种非制冷双色偏振红外探测器及其制造方法 Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00611—Processes for the planarisation of structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Geometry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
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CN201710328750.5A CN107101728B (zh) | 2017-05-11 | 2017-05-11 | 一种非制冷双色偏振红外探测器及其制造方法 |
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CN107101728B true CN107101728B (zh) | 2019-06-21 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109813448B (zh) * | 2019-01-31 | 2021-11-05 | 中国科学院长春光学精密机械与物理研究所 | 双谱超表面集成非制冷红外探测器及制作方法 |
CN111896122B (zh) * | 2020-08-11 | 2021-11-16 | 烟台睿创微纳技术股份有限公司 | 一种偏振非制冷红外探测器及其制备方法 |
CN111947789B (zh) * | 2020-08-11 | 2021-12-21 | 烟台睿创微纳技术股份有限公司 | 一种双色偏振非制冷红外探测器及其制作方法 |
CN111896120B (zh) * | 2020-08-11 | 2022-03-22 | 烟台睿创微纳技术股份有限公司 | 一种双色偏振非制冷红外探测器及其制作方法 |
CN113380916B (zh) * | 2021-04-23 | 2023-04-28 | 武汉高芯科技有限公司 | 双模式非制冷红外探测器热敏层结构及其制备方法 |
CN113447142A (zh) * | 2021-06-25 | 2021-09-28 | 北京北方高业科技有限公司 | 一种加固型cmos红外探测器 |
CN113594193B (zh) * | 2021-09-30 | 2022-01-25 | 西安中科立德红外科技有限公司 | 基于半导体集成电路的混合成像探测器芯片及制备方法 |
CN113921667B (zh) * | 2021-12-06 | 2022-03-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 中红外发光器件及其制备方法、发光组件及发光设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495829B1 (en) * | 1999-01-12 | 2002-12-17 | Nec Corporation | Thermal infrared array sensor for detecting a plurality of infrared wavelength bands |
CN106098846A (zh) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | 一种用于非制冷红外探测器参考像元及其制造方法 |
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US8610070B2 (en) * | 2010-04-28 | 2013-12-17 | L-3 Communications Corporation | Pixel-level optical elements for uncooled infrared detector devices |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495829B1 (en) * | 1999-01-12 | 2002-12-17 | Nec Corporation | Thermal infrared array sensor for detecting a plurality of infrared wavelength bands |
CN106098846A (zh) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | 一种用于非制冷红外探测器参考像元及其制造方法 |
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Denomination of invention: The invention relates to an uncooled two-color polarization infrared detector and a manufacturing method thereof Effective date of registration: 20211228 Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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Date of cancellation: 20230106 Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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Denomination of invention: An uncooled dual-color polarized infrared detector and its manufacturing method Effective date of registration: 20230113 Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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