CN107117578B - 一种非制冷双色红外探测器mems芯片及其制造方法 - Google Patents
一种非制冷双色红外探测器mems芯片及其制造方法 Download PDFInfo
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- CN107117578B CN107117578B CN201710328749.2A CN201710328749A CN107117578B CN 107117578 B CN107117578 B CN 107117578B CN 201710328749 A CN201710328749 A CN 201710328749A CN 107117578 B CN107117578 B CN 107117578B
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
- G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
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CN201710328749.2A CN107117578B (zh) | 2017-05-11 | 2017-05-11 | 一种非制冷双色红外探测器mems芯片及其制造方法 |
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CN201710328749.2A CN107117578B (zh) | 2017-05-11 | 2017-05-11 | 一种非制冷双色红外探测器mems芯片及其制造方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110120437B (zh) * | 2019-04-30 | 2021-04-30 | 上海集成电路研发中心有限公司 | 一种高填充因子的红外探测器结构及其制作方法 |
CN111017862B (zh) * | 2019-11-18 | 2023-08-22 | 上海华虹宏力半导体制造有限公司 | Mems桥梁柱结构及形成方法 |
CN111896120B (zh) * | 2020-08-11 | 2022-03-22 | 烟台睿创微纳技术股份有限公司 | 一种双色偏振非制冷红外探测器及其制作方法 |
CN113432724B (zh) * | 2021-06-25 | 2023-03-24 | 北京北方高业科技有限公司 | 一种非制冷调谐型红外探测器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495829B1 (en) * | 1999-01-12 | 2002-12-17 | Nec Corporation | Thermal infrared array sensor for detecting a plurality of infrared wavelength bands |
CN101586985A (zh) * | 2008-05-23 | 2009-11-25 | 中国电子科技集团公司第十三研究所 | 单片集成非制冷红外/紫外双色探测器及其制造方法 |
CN102175329A (zh) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | 红外探测器及其制作方法及多波段非制冷红外焦平面 |
CN102426060A (zh) * | 2011-08-26 | 2012-04-25 | 电子科技大学 | 一种太赫兹或红外微测辐射热计及其制作方法 |
CN106098846A (zh) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | 一种用于非制冷红外探测器参考像元及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5251310B2 (ja) * | 2008-07-08 | 2013-07-31 | 日本電気株式会社 | 2波長熱型赤外線アレイセンサ |
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2017
- 2017-05-11 CN CN201710328749.2A patent/CN107117578B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495829B1 (en) * | 1999-01-12 | 2002-12-17 | Nec Corporation | Thermal infrared array sensor for detecting a plurality of infrared wavelength bands |
CN101586985A (zh) * | 2008-05-23 | 2009-11-25 | 中国电子科技集团公司第十三研究所 | 单片集成非制冷红外/紫外双色探测器及其制造方法 |
CN102175329A (zh) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | 红外探测器及其制作方法及多波段非制冷红外焦平面 |
CN102426060A (zh) * | 2011-08-26 | 2012-04-25 | 电子科技大学 | 一种太赫兹或红外微测辐射热计及其制作方法 |
CN106098846A (zh) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | 一种用于非制冷红外探测器参考像元及其制造方法 |
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Denomination of invention: The invention relates to an uncooled two-color infrared detector MEMS chip and a manufacturing method thereof Effective date of registration: 20211228 Granted publication date: 20190129 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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Denomination of invention: An uncooled dual-color infrared detector MEMS chip and its manufacturing method Effective date of registration: 20230113 Granted publication date: 20190129 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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