CN107091622B - 一种纳米分辨率的应变测试设备及方法 - Google Patents
一种纳米分辨率的应变测试设备及方法 Download PDFInfo
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- CN107091622B CN107091622B CN201710489585.1A CN201710489585A CN107091622B CN 107091622 B CN107091622 B CN 107091622B CN 201710489585 A CN201710489585 A CN 201710489585A CN 107091622 B CN107091622 B CN 107091622B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/06—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring the deformation in a solid
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CN201710489585.1A CN107091622B (zh) | 2017-06-24 | 2017-06-24 | 一种纳米分辨率的应变测试设备及方法 |
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CN107091622B true CN107091622B (zh) | 2020-01-10 |
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US5125016B1 (en) * | 1983-09-22 | 1998-02-24 | Outokumpu Oy | Procedure and measuring apparatus based on x-ray diffraction for measuring stresses |
JPH07119716B2 (ja) * | 1990-04-19 | 1995-12-20 | 株式会社島津製作所 | 表面分析装置 |
CN2751297Y (zh) * | 2003-10-10 | 2006-01-11 | 中国科学院物理研究所 | 扫描电子显微镜使用的探针原位电学特性测量装置 |
CN101665236B (zh) * | 2009-09-08 | 2012-03-21 | 北京航空航天大学 | 一种具有可控范围77k至400k温度的可控温度样品台 |
CN103529643B (zh) * | 2012-07-05 | 2017-01-18 | 中国科学院物理研究所 | 一种纳米图形化***及其光响应特性检测装置 |
CN105606982B (zh) * | 2015-09-11 | 2018-05-22 | 厦门市三安光电科技有限公司 | 一种氮化物发光二极管磁电应力耦合的原位测试*** |
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Effective date of registration: 20221230 Address after: 213000 Southwest Fubei Industrial Park, the intersection of Qingyang North Road and Xiqi Road, Tianning District, Changzhou, Jiangsu Province Patentee after: Changzhou manwang Semiconductor Technology Co.,Ltd. Address before: 362343 Guoqian second industrial zone, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee before: FUJIAN NAN'AN QINGXIN STONE CO.,LTD. |
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Address after: 213017 No.11, Qingyang North Road, Tianning District, Changzhou City, Jiangsu Province Patentee after: Jiangsu Manwang Semiconductor Technology Co.,Ltd. Country or region after: China Address before: 213000 Southwest Fubei Industrial Park, the intersection of Qingyang North Road and Xiqi Road, Tianning District, Changzhou, Jiangsu Province Patentee before: Changzhou manwang Semiconductor Technology Co.,Ltd. Country or region before: China |
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