CN107078189A - Semiconductor luminous assembly - Google Patents
Semiconductor luminous assembly Download PDFInfo
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- CN107078189A CN107078189A CN201580050792.6A CN201580050792A CN107078189A CN 107078189 A CN107078189 A CN 107078189A CN 201580050792 A CN201580050792 A CN 201580050792A CN 107078189 A CN107078189 A CN 107078189A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The present invention provides a kind of semiconductor luminous assembly, and with the quantum well active layer being made up of well layer and barrier layer, the wherein emission wavelength of the semiconductor luminous assembly is more than 585nm and below 605nm；The well layer is by chemical formula (AlxGal‑x)yIn1‑yP (0 ＜ x≤0.06,0 ＜ y ＜ 1) compound semiconductor is constituted；And the barrier layer is by chemical formula (AlmGal‑m)nIn1‑nP (0≤m≤1,0 ＜ n ＜ 1) compound semiconductor is constituted.The active layer constructed by using this SQW, can obtain high-luminous-efficiency in short wavelength region (Yellow luminous).
Description
Technical field
The present invention relates to a kind of semiconductor luminous assembly of use compound semiconductor materials.
Background technology
AlGaInP based materials have maximum direct jump in Group III-V compound semiconductor mixed crystal (except nitride)
Type band gap is moved, and is normally used as the luminescence component material of 500~600nm bands.Particularly with known use GaP or GaAsP etc.
The thing of indirect transition section bar material compare, with the hair by the illuminating parts constituted of the AlGaInP with GaAs substrate Lattice Matchings
Optical assembly, can carry out the luminous of high brightness.
Even however, it is such a have by the AlGaInP illuminating parts constituted luminescence component, also and can not ensure its
The luminous efficiency in short wavelength region (Yellow luminous) is necessarily enough.
As the reason for luminous efficiency is low in short wavelength region, it is considered to be caused by following reason etc., (1) due to
The poor small relation of energy bandgaps between active layer and coating layer, and make limitation (Confinement) deficiency of carrier, (2) are
Constitute the A1 of active layer to improve, and the non-luminescent center in active layer increase, (3) energy bandgaps are constructed from direct transition
Type is close to indirect transition type.
Have to solve to disclose in these problem points, patent document 1 by the way that active layer to be set to 80~200 layers of SQW
Construction, and it (that is, is (Al using chemical formula the Al in barrier layer is constituted more than 0.5xGal-x)1-y InyP, wherein 0.5 ＜ x≤
1) compound semiconductor is come the method that suppresses the overflow (overflow) of carrier and obtain high-luminous-efficiency.
In addition, disclosed in patent document 2 by be imported with active layer distortion of lattice SQW construct (that is, by with
Elongation strain or the well layer of compression strain and the strain with the strain opposite with well layer relax the SQW that barrier layer is constituted
Construction), to lower the method that the Al in active layer is constituted and then obtained high-luminous-efficiency.
[prior art literature]
[patent document]
[patent document 1] Japanese Unexamined Patent Publication 2008-192790 publications
[patent document 2] Japanese Unexamined Patent Publication 8-088404 publications
The content of the invention
As described above, the reduction in order to suppress luminous efficiency in short wavelength region, it has been suggested that patent document 1 or patent document
Method disclosed in 2.
However, in the method disclosed in patent document 1, although the overflow of carrier can be suppressed, but in order to improve activity
A1 compositions in layer, having causes the problem of luminous efficiency is reduced.
In addition, in method disclosed in patent document 2, though using strain relaxation layer as strain and cause crystallization
In lattice defect increase, thus have the problem of necessarily can not obtaining high-luminous-efficiency.
In view of above-mentioned the problem of point, the purpose of the present invention is provides a kind of semiconductor luminous assembly, even if using quantum
The active layer of trap construction, also can obtain high-luminous-efficiency in short wavelength region (Yellow luminous).
In order to reach above-mentioned purpose, the present invention provides a kind of semiconductor luminous assembly, with by well layer and barrier layer institute structure
Into quantum well active layer, the wherein semiconductor luminous assembly is characterised by：The emission wavelength of the semiconductor luminous assembly is
More than 585nm and below 605nm；The well layer is by chemical formula (AlxGal-x)yIn1-yP (0 ＜ x≤0.06,0 ＜ y ＜ 1) compound
Semiconductor is constituted；And the barrier layer is by chemical formula (AlmGal-m)nIn1-nP (0≤m≤1,0 ＜ n ＜ 1) compound is partly led
Body is constituted.
In this way, being 0.06 by constituting the Al compositions for the well layer that the AlGaInP based compounds of quantum well active layer are constituted
Following composition, can reduce the average Al compositions of quantum well active layer, can thus reduce the non-hair in quantum well active layer
Light center, thus high-luminous-efficiency can be obtained in short wavelength region (Yellow luminous).
Now, the total film thickness of the quantum well active layer is that more than 200nm and below 300nm is preferred.
It is more than 200nm by the total film thickness of quantum well active layer, the luminous effect caused by the overflow of carrier can be suppressed
The reduction of rate.In addition, be below 300nm by the total film thickness of quantum well active layer, it can prevent because of manufacturing time or fee of material
Manufacturing cost rise caused by increase.
As previously discussed, by the semiconductor luminous assembly of the present invention, even if the active layer constructed using SQW, also can
In short wavelength region, (Yellow luminous) obtains high-luminous-efficiency.
Brief description of the drawings
Fig. 1 is the summary section of one of the implementation aspect for showing the semiconductor luminous assembly of the present invention.
Fig. 2 is shown in the step profile of the manufacturing process used in the semiconductor luminous assembly of the manufacture present invention.
Fig. 3 is the chart for showing the relation between the total film thickness of quantum well active layer and luminous efficiency.
Fig. 4 is the chart for showing the relation in embodiment and comparative example between emission wavelength and luminous efficiency.
Embodiment
Hereinafter, one side referenced in schematic is while be described in detail one of the implementation aspect of the present invention, but the present invention is not limited
Due to this.
As described above, the reduction in order to suppress the luminous efficiency in the short wavelength region of semiconductor luminous assembly, though propose
There is the method for the active layer of multiple use SQW constructions, but regardless of in which method, in short wavelength region (yellow
It is luminous) in obtain high-luminous-efficiency this point and still have improved space.
Therefore, the present inventor repeatedly have extensively studied also can be in short wavelength region even if the active layer constructed using SQW
Domain (Yellow luminous) obtains the semiconductor luminous assembly of high-luminous-efficiency.
As a result, be found that by constitute the Al of the well layer that the AlGaInP based compounds of quantum well active layer are constituted into
It is divided into less than 0.06 composition, the average Al compositions of quantum well active layer can be reduced, quantum well active layer can be thus reduced
In non-luminescent center, thus high-luminous-efficiency can be obtained in short wavelength region (Yellow luminous), so as to complete the present invention.
First, Fig. 1 is referred to while illustrating one of the implementation aspect of the semiconductor luminous assembly of the present invention.
The semiconductor luminous assembly 10 of the invention for being shown in Fig. 1 possesses the illuminating part 19 of quantum well active layer 14.
Quantum well active layer 14 is to interact the thing that lamination is formed by well layer 16, barrier layer 15.Well layer 16 is by chemical formula (AlxGal-x)yIn1-yP (0 ＜ x≤0.06,0 ＜ y ＜ 1) i-AlGaInP is constituted, and barrier layer 15 is by chemical formula (AlmGal-m)nIn1-nP(0
≤ m≤1,0 ＜ n ＜ 1) i-AlGaInP constituted.The emission wavelength of semiconductor luminous assembly 10 is more than 585nm and 605nm
Hereinafter, for example by the thickness for the well layer 16 for changing quantum well active layer 14, and it can reach desired in above-mentioned scope
Wavelength.
Illuminating part 19 is for example by the first conductivity type current diffusion layer 12, the first conductivity type coating layer 13, SQW activity
The semiconductor layer that the 14, second conductivity type coating layer 17 of layer, the second conductivity type current diffusion layer 18 are constituted.First conductivity type current
Diffusion layer 12, the first conductivity type coating layer 13, the second conductivity type coating layer 17, the second conductivity type current diffusion layer 18 difference are for example
For：Chemical formula (AlxGal-x)yIn1-yP (0 ＜ x≤1,0 ＜ y ＜ 1) p-AlGaInP layers, chemical formula (AlxGal-x)yIn1-yP(0
＜ x≤1,0 ＜ y ＜ 1) p-AlGaInP layers, chemical formula (AlxGal-x)yIn1-yP (0 ＜ x≤1,0 ＜ y ＜ 1) n-AlGaInP
Layer, n-GaP layers.
It is provided with for example on illuminating part 19：The nurse fine wire electrode 11 difficult to understand of the first of p-type side and pad electrode (not shown).
Semiconductor luminous assembly 10 is with more for example：Electric conductivity supporting substrate 24, it is arranged on electric conductivity supporting substrate 24
Bonding metallic layer 23, be arranged on bonding metallic layer 23 reflective metal layer 22, be arranged at it is transparent on reflective metal layer 22
Oxidation film layer 21, the second nurse fine wire electrode 20 difficult to understand of the n-type side being arranged in transparent Indium film layer 21, in electric conductivity supporting substrate
24 lower surface sets conductive nurse electrode 25 difficult to understand, in being then provided with above-mentioned illuminating part 19 in transparent Indium film layer 21.Separately
Outside, the first nurse fine wire electrode 11 and second difficult to understand nurse fine wire electrode 20 difficult to understand is configured at the position for example seen from above not overlapped each other
Put.
The total film thickness of quantum well active layer 14 is preferred in more than 200nm and below 300nm.Because as shown in figure 3, hair
The luminous efficiency of semiconductor luminous assembly 10 of the optical wavelength when 585nm, in quantum well active layer 14 total film thickness in 200nm
Peak value can be turned into above and in below 300nm scope.Herein, Fig. 3 luminous efficiency is with the total film thickness of quantum well active layer 14
Ratio when luminous efficiency in 250nm is set to " 1 " is represented.
Furthermore, for the characteristic shown by Fig. 3 to be reached, the total film thickness of its quantum well active layer 14 is thin such as compared with 200nm
When, then because of the overflow of carrier luminous efficiency can be caused to reduce, and the total film thickness of quantum well active layer 14 is thickness such as compared with 300nm
When, though can suppress the overflow of carrier, well layer 16 can not see the lifting of luminous efficiency because absorption change itself is big.
By the total film thickness of quantum well active layer 14 in more than 200nm, it can suppress luminous caused by the overflow of carrier
Efficiency is reduced, and by the total film thickness of quantum well active layer 14 in below 300nm, then can be prevented because of manufacturing time or fee of material
Manufacturing cost rise caused by increase.
For example, set in the thickness to well layer 16 and the emission wavelength of semiconductor luminous assembly 10 is reached institute
While desired value, logarithm can be carried out to quantum well active layer 14 (by well layer n (n is positive integer) layer, n+1 layers of barrier layer
When the adjustment that is set to n) of logarithm the total film thickness is reached the desired value in above range.
The total film thickness of quantum well active layer 14 can be set to e.g., from about 250nm.
Above-mentioned use Fig. 1 completes the semiconductor luminous assembly of the present invention of explanation, due to by constituting quantum well active layer 14
AlGaInP systems the Al compositions of well layer 16 that are constituted of compound semiconductor below 0.06, therefore SQW work can be reduced
Property layer 14 average Al compositions, consequently, it is possible to the non-luminescent center in quantum well active layer 14 can be reduced, thus can be in short wavelength
(Yellow luminous) obtains high-luminous-efficiency in region.
Next, referring to Fig. 2 while illustrating one of the manufacture method of the semiconductor luminous assembly of the manufacture present invention.
Hereinafter, illustrated exemplified by manufacturing the emission wavelength 585nm situation of semiconductor luminous assembly.
First, as shown in Fig. 2 (a), in the semiconductor lamination knot that multiple AlGaInP based materials are formed on GaAs substrates 26
Structure.Specifically, on n-GaAs substrates 26, with MOVPE methods (Organometallic Vapor Phase epitaxy flop-in method), sequentially storehouse is for example：p-
Ga0.5In0.5P etching stopping layer 27 and p-GaAs contact layer 28, p- (Al0.4Ga0.6)0.5In0.5P p-type current-diffusion layer
12、p-Al0.5In0.5P p-type coating layer 13, by undoped with its (Al0.06Ga0.94)0.5In0.5P well layer 16 (thickness 2.7nm) with
Undoped with its (Al0.6Ga0.4)0.5In0.5Quantum well active layer 14, n- that P barrier layer 15 (thickness 7.7nm) is constituted
Al0.5In0.5P n-type coating layer 17, n-GaP n-type current-diffusion layer 18.Raw material used in MOVPE methods, can be used
The organo-metallic compounds such as trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn),
And arsenic hydride (AsH3), hydrogen phosphide (PH3) etc. hydride gas.Also, the raw material of n-type dopant can use single silane
(SiH4), the raw material of p-type dopant can use bis-cyclopentadienyl magnesium (bis (cyclopentadienyl) magensium,
Cp2Mg).In addition, as the raw material of n-type dopant, arsenic hydride (H can be used2Se), double silane (Si2H6), tellurium diethyl
Or dimethyl tellurium (DMTe) (DETe).Furthermore, as the raw material of p-type dopant, zinc methide (DMZn) or diethyl can be used
Zinc (DEZn).
Next, as shown in Fig. 2 (b), in the surface of the n-type current-diffusion layer 18 of the semiconductor lamination tectosome through formation
Form the second nurse fine wire electrode 20 difficult to understand of transparent Indium film layer 21 and n-type side.Specifically, using plasma chemistry gas
Mutually deposition (chemical vapor deposition, CVD) device, forms SiO2Film is used as after transparent Indium film layer 21,
Using photolithography and etching method, opening portion is set.In more detail, etching solution is used as by using the etchant of hydrofluoric acid system
To remove the transparent Indium film layer 21 in the region for not forming photoresistance pattern to set opening portion.Next vacuum vapour deposition is used,
Gold silicon (AuSi) alloy for the second material of nurse fine wire electrode 20 difficult to understand for constituting n-type side is formed in opening portion.
Next, as shown in Fig. 2 (c), on the nurse fine wire electrode 20 difficult to understand of transparent Indium film layer 21 and second, using true
Empty vapour deposition method or sputtering method sequentially form the Al layers as reflecting layer, titanium (Ti) layer as barrier layer and as bonding layer it
Golden (Au) layer.Thus, reflective metal layer 22 is formed.Furthermore, reflective metal layer 22 is sent in response in quantum well active layer 14
Light wavelength, and select the high material of the wavelength reflection for the light.
Laminate 29 is produced via the above practice.
Next, as shown in Fig. 2 (d), preparing supporting substrate 30, the supporting substrate 30 is in electric conductivity supporting substrate (example
Such as Si substrates) Ti, the Ni as barrier layer and conduct as contact electrode are formed with 24 by using vacuum vapour deposition
The Au of bonding layer is used as the bonding metallic layer 23 of electric conductivity nurse difficult to understand, and by the way that this supporting substrate 30 is fitted with laminate 29,
With produce supporting substrate 30 and laminate 29 in mechanically, electrically on the junction structure 31 that is connected.The laminating of wafer is to make
Turn into laminating apparatus after predetermined pressure, tool is passed through to laminated laminate 29 and supporting substrate 30 stressed to apply
Meanwhile, it is heated to predetermined temperature.Specific laminating condition is, in pressure 7000N/m2And 30 minutes under 350 DEG C of temperature
Time.
Next, as shown in Fig. 2 (e), the etchant used being etched using GaAs (GaAs), is selected from junction structure 31
Property by n-GaAs substrates 26 completely remove, make by p-Ga0.5IN0.5The etching stopping layer 27 that P is constituted exposes.Lost as GaAs
The etchant used is carved, the mixed liquor such as ammoniacal liquor and hydrogen peroxide must be enumerated.Next control oneself and remove the engagement structure of n-GaAs substrates 26
Body 31 is made, etching stopping layer 27 (exposing contact layer 28) is removed to etch using predetermined etchant.In etching stopping layer
27 be the situation formed by the compound semiconductor of AlGaInP based materials, can be used as using hydrochloric etchant predetermined
Etchant.
Next, as shown in Fig. 2 (f), using photolithography and vacuum vapour deposition, Austria of p-type side is formed in precalculated position
Nurse electrode.The nurse electrode difficult to understand of p-type side is to be formed with circular electrode (not shown) with the first nurse fine wire electrode 11 difficult to understand, for example, by
Ti, gold beryllium alloy (AuBe), Au is sequentially deposited to be formed.In this situation, the such as first nurse fine wire electrode 11 difficult to understand be formed at
The misaligned position of second nurse fine wire electrode 20 difficult to understand.Next using the nurse electrode difficult to understand of p-type side as shielding, etching is removed by p-
The contact layer 28 that GaAs is constituted.In addition, also contact layer 28 can be carried out at roughening as shielding to p-type current-diffusion layer 12
Reason.In addition, after removing contact layer 28, processing p-type current-diffusion layer 12 is roughened using predetermined etchant.
Next, as shown in Fig. 2 (g), in the about entire surface at the back side of electric conductivity supporting substrate 24, passing through vacuum evaporation
Method forms electric conductivity nurse electrode 25 difficult to understand.The electric conductivity at back side nurse electrode 25 difficult to understand for example can by the bottom surface of supporting substrate 24 sequentially
Ti and Au is deposited to be formed.Thereafter, in imposing alloy (alloy) change processing on each nurse electrode difficult to understand, the Alloying Treatment is to be formed
Electrically engagement., can be under the blanket of nitrogen as inert atmosphere, at the heat for imposing 400 DEG C, 5 minutes as one of alloy treatment
Reason.Junction structure 32 is produced by so.
Afterwards, using the cutter device with cutter, the monolithic of junction structure 32 is turned into each group part.Thus, make
Go out multiple semiconductor luminous assemblies 10 as shown in Figure 1.
【Embodiment】
Hereinafter, display embodiment and comparative example further illustrate the present invention, but the present invention is not defined to this.
(embodiment)
Fig. 1 semiconductor luminous assembly 10 is made using in the manufacture method illustrated by Fig. 2.
Here, each layer of semiconductor luminous assembly 10, as shown below.
P-type current-diffusion layer 12 ... p- (Al0.4Ga0.6)0.5In0.5P
P-type coating layer 13 ... p-Al0.5In0.5P
Barrier layer 15 ... i- (Al0.6Ga0.4)0.5In0.5P
Well layer 16 ... i- (Al0.06Ga0.94)0.5In0.5P
N-type coating layer 17 ... n-Al0.5In0.5P
N-type current-diffusion layer 18 ... n-GaP
GaAs substrates 26 ... n-GaAs
Etching stopping layer 27 ... p-Ga0.5In0.5P
Contact layer 28 ... p-GaAs
But, as shown in table 1, the Al compositions of well layer 16 are fixed on 0.06, change the thickness of well layer 16, also, pass through adjustment
Well layer 16 and the logarithm of barrier layer 15, making the total film thickness of quantum well active layer 14 turns into about 250nm, and makes semiconductor luminous assembly
10 emission wavelength changes in the range of 585~605nm.
To determining luminous efficiency according to the semiconductor luminous assembly manufactured by the above-mentioned practice.
Quantum well active layer construction and luminous efficiency in each emission wavelength are shown in table 1.Furthermore, represented by table 1 is
Reference luminous efficiency of the emission wavelength when 615nm.Luminous efficiency in this is with luminous efficiency (%)=output (mW)/defeated
Enter electric power (mW) to calculate, ratio when being set to " 1 " with emission wavelength 615nm luminous efficiency is represented.
In addition, showing the relation between emission wavelength and luminous efficiency in Fig. 4.
【Table 1】
(comparative example)
To make semiconductor luminous assembly with embodiment identical mode.But the Al compositions and thickness of well layer 16 according to
Table 2 is changed, and emission wavelength is changed in the range of 585~605nm.
To above-mentioned manufactured semiconductor luminous assembly to determine luminous efficiency with embodiment identical mode.
Quantum well active layer construction and luminous efficiency in each emission wavelength are represented in table 2.Furthermore, represented by table 2 is
Reference luminous efficiency of the emission wavelength when 615nm.
In addition, showing the relation between emission wavelength and luminous efficiency in Fig. 4.
【Table 2】
Learnt by Fig. 4, in emission wavelength in more than 585nm and below 605nm scope, compared with comparative example, in reality
The luminous efficiency applied in example is higher.
In addition, the present invention is not defined to above-described embodiment, above-described embodiment is illustrates, all Shens having with the present invention
Substantially the same composition of technological thought that please be described in the scope of the claims, can obtain same action effect, all be comprised in
In the technical scope of the present invention.
Claims (2)
1. a kind of semiconductor luminous assembly, with the quantum well active layer being made up of well layer and barrier layer, the wherein semiconductor
The emission wavelength of luminescence component is more than 585nm and below 605nm；
The well layer is by chemical formula (AlxGal-x)yIn1-yP compound semiconductor is constituted, wherein 0 ＜ x≤0.06,0 ＜ y ＜ 1；
And
The barrier layer is by chemical formula (AlmGal-m)nIn1-nP compound semiconductor is constituted, wherein 0≤m≤1,0 ＜ n ＜ 1.
2. the total film thickness of semiconductor luminous assembly as claimed in claim 1, the wherein quantum well active layer be more than 200nm and
Below 300nm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-205667 | 2014-10-06 | ||
| JP2014205667A JP2016076583A (en) | 2014-10-06 | 2014-10-06 | Semiconductor light emitting element |
| PCT/JP2015/004598 WO2016056171A1 (en) | 2014-10-06 | 2015-09-10 | Semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107078189A true CN107078189A (en) | 2017-08-18 |
Family
ID=55652812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580050792.6A Pending CN107078189A (en) | 2014-10-06 | 2015-09-10 | Semiconductor luminous assembly |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2016076583A (en) |
| KR (1) | KR20170066365A (en) |
| CN (1) | CN107078189A (en) |
| DE (1) | DE112015003919T5 (en) |
| TW (1) | TW201614863A (en) |
| WO (1) | WO2016056171A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497300A (en) * | 2022-01-25 | 2022-05-13 | 厦门市三安光电科技有限公司 | Light emitting diode and light emitting device |
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| JP2008153584A (en) * | 2006-12-20 | 2008-07-03 | Toshiba Discrete Technology Kk | Semiconductor light-emitting element |
| CN101540359B (en) * | 2009-04-29 | 2010-12-29 | 山东华光光电子有限公司 | Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof |
| TW201246595A (en) * | 2011-04-06 | 2012-11-16 | Showa Denko Kk | Light emitting diode, light emitting diode lamp and lighting equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066862A (en) * | 1998-08-31 | 2000-05-23 | United Epitaxy Company, Ltd. | High brightness light emitting diode |
| JP2002151734A (en) * | 2000-09-04 | 2002-05-24 | Sharp Corp | Light emitting diode |
| JP2010067903A (en) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | Light emitting element |
| JP2010267813A (en) * | 2009-05-14 | 2010-11-25 | Toshiba Corp | Light emitting device, and method for manufacturing the same |
-
2014
- 2014-10-06 JP JP2014205667A patent/JP2016076583A/en active Pending
-
2015
- 2015-09-10 DE DE112015003919.8T patent/DE112015003919T5/en not_active Withdrawn
- 2015-09-10 KR KR1020177008368A patent/KR20170066365A/en unknown
- 2015-09-10 CN CN201580050792.6A patent/CN107078189A/en active Pending
- 2015-09-10 WO PCT/JP2015/004598 patent/WO2016056171A1/en active Application Filing
- 2015-09-14 TW TW104130280A patent/TW201614863A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008153584A (en) * | 2006-12-20 | 2008-07-03 | Toshiba Discrete Technology Kk | Semiconductor light-emitting element |
| CN101540359B (en) * | 2009-04-29 | 2010-12-29 | 山东华光光电子有限公司 | Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof |
| TW201246595A (en) * | 2011-04-06 | 2012-11-16 | Showa Denko Kk | Light emitting diode, light emitting diode lamp and lighting equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497300A (en) * | 2022-01-25 | 2022-05-13 | 厦门市三安光电科技有限公司 | Light emitting diode and light emitting device |
| CN114497300B (en) * | 2022-01-25 | 2024-02-27 | 泉州三安半导体科技有限公司 | Light emitting diode and light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170066365A (en) | 2017-06-14 |
| JP2016076583A (en) | 2016-05-12 |
| TW201614863A (en) | 2016-04-16 |
| DE112015003919T5 (en) | 2017-05-18 |
| WO2016056171A1 (en) | 2016-04-14 |
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Application publication date: 20170818 |