CN107068745A - A kind of field-effect transistor and preparation method thereof - Google Patents
A kind of field-effect transistor and preparation method thereof Download PDFInfo
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- 238000002353 field-effect transistor method Methods 0.000 title claims abstract description 5
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- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 39
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052582 BN Inorganic materials 0.000 claims description 3
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- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
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- 229920005573 silicon-containing polymer Polymers 0.000 claims description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical group S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
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- 235000016768 molybdenum Nutrition 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
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- 229910052958 orpiment Inorganic materials 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 5
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- 235000007164 Oryza sativa Nutrition 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
Abstract
Van der Waals hetero-junctions with the features such as its atomic level interface, prominent mechanical flexibility and high chemical stability by the research band of functional form hetero-junctions to a new epoch.Its layer coupling characteristic to have broken the constraint when selection prepares material, and eliminates huge limitation of the traditional material when preparing heterojunction structure.It is simple the invention is intended to provide a kind of technological process, low is required to Lattice Matching between substrate and different materials, the technique such as material doped need not be carried out, but utilize van der waals force that two kinds of different two dimensional crystals are constituted into heterojunction structure, the heterojunction structure, which is recycled, as conducting channel material prepares field-effect transistor and preparation method thereof.
Description
Technical field
The present invention relates to two-dimension nano materials preparation and its preparation method of field-effect transistor, Fan Dewa is mainly used
Two kinds of different two dimensional crystals are constituted heterojunction structure by Er Sili, are prepared by the use of the heterojunction structure as conducting channel material
Field-effect transistor, the device is applied to the fields such as integrated circuit.
Background technology
As device size is less and less in IC industry, the thing of traditional silicon-based semiconductor progressively close to material in itself
Manage the limit.Microelectronic technology is more and more by short-channel effect, quantum tunneling effect, the challenge of the factor such as power attenuation,
It is badly in need of finding the generation semiconductor material for being capable of substituted for silicon.
With the discovery of graphene in 2004, start to start the tide of a burst of study two-dimensional material.When transition metal dithionite
When compound (TMDCs) is changed into two-dimensional structure from body material, the band structure of electronics can be changed into direct band gap from indirect band gap, this meeting
The optically and electrically performance of transition metal dichalcogenide is changed a lot, be described as " graphene " of semiconductor circle.Two
Material is tieed up with its ultra-thin material thickness, carrier mobility and band gap width controllable, it is the absorption coefficient of light of superelevation, good
Not the advantages of strict Lattice Matching not being needed between electric conductivity, extraordinary mechanical strength, ductility, flexibility, different materials,
Great application has been shown in terms of the efficient solar cell of semiconductor, photo-detector, electronics and optoelectronic device applications
Potentiality.
Among these, as the molybdenum disulfide in transition metal dichalcogenide, tungsten disulfide and stannic disulfide etc. have wider band
Gap is conducive to overcoming the short-channel effect of device, prepares smaller size of device；Material has layer structure, between layers
Only it is combined together by faint van der waals force, two-dimensional material is prepared into easily by mechanical stripping method.
What is more important, these two dimensional crystals can be used for preparing new heterojunction structure, and between different materials
It can be combined together by Van der Waals for, it is not necessary to strict Lattice Matching, and fundamentally bring leather to material science
The progress of life property.
Field-effect transistor preparation technology needs, the multiple tracks complicated technology such as doping thermally grown by backing material at this stage,
And it is strict for the Lattice Matching requirement between substrate and growth material.This patent is intended to provide a kind of technological process simply,
Low is required to Lattice Matching between substrate and different materials, it is not necessary to carry out the technique such as material doped, but utilize van der Waals
Two kinds of different two dimensional crystals are constituted heterojunction structure by power, are recycled the heterojunction structure as conducting channel material and are prepared field
Effect transistor and preparation method thereof.
The content of the invention
Based on above mentioned problem, the invention provides a kind of preparation method of field-effect transistor：
Step one, the preparation of two dimensional crystal：PET pad pastings are cut into two 2 × 5cm oblong-shaped, by high-purity crystals
(graphite or sulphide crystals) are placed between two panels PET film adhesive faces, two panels PET film is constantly contacting and separating and are reached and make crystal
Thinning purpose.Then PET film adhesive faces are contacted with PDMS (dimethyl silicone polymer) and again slowly opened PET film, one
Divide crystal to be transferred on PDMS, realize the preparation of individual layer or few layer graphene or two-dimentional sulphide crystals sample.
Screening, the transfer of step 2, two-dimensional graphene and sulfide：The PDMS that crystal is carried in step one is taken, is put
To micro- Microscopic observation, desired two dimensional crystal is filtered out using the contrast of light microscope.Then two-dimentional sulfide is shifted
Crystal, PDMS is contacted with silicon substrate, then PDMS is slowly opened, and so two-dimentional sulphide crystals have been branched on silicon substrate.
Step 3, by means of light microscope, few layer graphene of acquisition is covered on few layer of two-dimentional sulphide crystals,
Few layer graphene and the two-dimentional sulphide crystals of few layer are combined together to form heterojunction structure using van der waals force.
Step 4, the preparation of field-effect transistor：The silicon substrate that thin layer is found in step 2 is taken, is soaked with acetone soln,
Then quick one layer of PMMA photoresist of spin coating again, the silicon chip for coating photoresist is put on hot plate and toasted.Silicon substrate is put and covered
Film version, the exposure of electrode is carried out with electron beam exposure apparatus.It is 1 with mass ratio:3 methylisobutylketone and isopropanol mixed liquor is made
For developing liquid developing, and with IPA it is fixing after dried up with drying nitrogen.Electron beam evaporation is in the substrate two dimensional crystal different with two kinds
Constitute deposited metal thin film electrode layer on heterojunction structure.
In the step one, 1) raw material used for high-purity graphite or vulcanization object materials；2) wherein PDMS is
WillSubstrate and consolidant are according to 10 in 184 elastomer silicone external members:1 ratio is mixed, before use
First several layers of its clean surface of guarantee above are torn off with adhesive tape；3) wherein PET pad pastings are the PET material hands used in living
Faint Van der Waals between machine film, the weaker graphite or vulcanization object crystal easily against high-purity of its viscosity；4) PET film
The number of times being contacting and separating is thinning and be uniformly paved with PET film surface until visually observing crystal thickness by make decision, and increases
Separate the probability of individual layer or few layer.In the step 2, used light microscope is outfit xy directions mobile platform
Model.In the step 3, Powerful Light Microscope and PDMS light transmission features are relied primarily on, realizes that graphene vulcanizes with two dimension
The accurate assembling of thing hetero-junctions；In the step 4, spin coating photoresist speed is 5000 rpms, and thickness is 200 nanometers；Dry
Roasting temperature is 180 degrees Celsius, 1 minute time；The developing liquid developing time is 40 seconds, and fixing time is 30 seconds；Electron beam evaporation sinks
Long-pending metal electrode is titanium and gold.
Beneficial effects of the present invention：
Two-dimensional graphene and sulphide crystals that the present invention was prepared on PDMS substrates using mechanical stripping method before this, composition
After two-dimensional hetero-junction, it is transferred on silicon substrate, recycles it to prepare field-effect transistor.Two dimensional crystal and its heterogeneous section
Preparation manipulation is simple, quick, cost is low, without the need for doping process is passed through, remains material itself intrinsic property.Utilize two
The thickness property of graphene and sulfide Nano grade is tieed up, device size can be effectively reduced.
The present invention passes through lot of experiment validation, a kind of effective preparation method is summed up, compared to existing transistor
Preparation method, not only technique is simple, and the requirement to substrate is lower, while material ultra-thin characteristic in itself, can build
The device of vertical stratification, reduces device size.
Brief description of the drawings
Fig. 1：Two-dimentional sulfide is prepared and transfer schematic diagram (a) preparation process (b) transfer process（Two dimensional crystal hetero-junctions system
Standby schematic diagram (a) two dimensional crystal preparation process (b) two dimensional crystal hetero-junctions assembling process）；
Fig. 2：Stannic disulfide phenogram (a) AFM phenogram (b) transistor light microscopic figure；
Fig. 3：Two-dimentional sulphide crystals pipe light microscopic figure (a) boron nitride is two selenizing molybdenum transistors of insulating barrier
(b) two selenizing molybdenum transistor (c) orpiment transistor；
Fig. 4：Field-effect transistor structure schematic diagram.
Embodiment
Following instance further illustrates the present invention, but not as a limitation of the invention.
Embodiment one
Step one, two-dimensional graphene and stannic disulfide crystal are prepared first：Shown in its step such as Fig. 1 (a), by PET pad pastings
Two 2 × 5cm oblong-shaped is cut into, high purity graphite or stannic disulfide crystal are placed between two panels PET film adhesive faces,
Two panels PET film is set constantly to be contacting and separating, it is thinning and be uniformly paved with PET film surface until visually observing crystal thickness；Make
First several layers of its clean surface of guarantee above PDMS are torn off with preceding with adhesive tape；Then PET film adhesive faces are contacted again with PDMS
PET film is slowly opened, a part of crystal is transferred on PDMS, realize the system of two-dimensional graphene and stannic disulfide crystal prototype
It is standby.
Step 2, screening, the transfer of two-dimensional graphene and stannic disulfide crystal：The PDMS that crystal is carried in step one is taken,
500 times of micro- Microscopic observation is put it to, desired two dimensional crystal is filtered out using the contrast of light microscope；Then turn
Stannic disulfide sample therein is moved, shown in its step such as Fig. 1 (b), PDMS is contacted with silicon substrate, then PDMS is slowly opened,
So two-dimentional stannic disulfide crystal has been branched on silicon substrate；
Step 3 is slow close to two-dimentional two sulphur by the PDMS with graphene using high-power microscope and displacement platform
Change the silicon substrate of tin, utilize few layer graphene of high-power microscope and the PDMS accurate ad-hoc location by acquisition of light transmission features
It is covered on few layer of two-dimentional stannic disulfide crystal, will few layer graphene and the two-dimentional sulphide crystals of few layer using van der waals force
It is combined together to form heterojunction structure.
Step 4, the preparation based on the heterogeneous section transistor of two-dimensional graphene and stannic disulfide：Its structural representation such as Fig. 4 institutes
Show, for preparing is shown in light microscopic hypograph such as Fig. 2 (b) based on the heterogeneous section transistor of two-dimensional graphene and stannic disulfide；With third
Silicon chip of the ketone solution immersion with layer material；One layer of PMMA photoresist of quick spin coating, speed is 5000 rpms, thickness
For 200 nanometers；The silicon chip for coating photoresist is put on hot plate and toasted, baking temperature is 180 degrees Celsius, 1 minute time；By silicon
Piece puts mask plate, and the exposure of electrode is carried out with electron beam exposure apparatus；It is 1 with mass ratio:3 methylisobutylketone and isopropanol is mixed
Liquid is closed as developing liquid developing, and with IPA it is fixing after dried up with drying nitrogen, the developing liquid developing time is 40 seconds, fixing time
For 30 seconds；Electron beam evaporation in substrate and based on deposited metal thin film electrode layer in two-dimensional graphene and the heterogeneous section of stannic disulfide,
The metal electrode of electron-beam evaporation is the titanium of 5 nanometer thickness and the gold of 60 nanometer thickness.
Embodiment two
Step one, two-dimensional graphene and two-dimentional crystal of molybdenum disulfide are prepared first, shown in its step such as Fig. 1 (a), by PET
Pad pasting is cut into two 2 × 5cm oblong-shaped, by high purity graphite or crystal of molybdenum disulfide be placed in two panels PET film adhesive faces it
Between, two panels PET film is constantly contacting and separating, it is thinning and be uniformly paved with PET film surface until visually observing crystal thickness；
First several layers of its clean surface of guarantee above PDMS are torn off using preceding with adhesive tape；Then PET film adhesive faces are contacted with PDMS
PET film is slowly opened again, a part of crystal is transferred on PDMS, realize the system of two-dimensional graphene and crystal of molybdenum disulfide sample
It is standby.
Step 2, screening, the transfer of two-dimentional molybdenum disulfide：The PDMS that crystal is carried in step one is taken, 500 times are put it to
Micro- Microscopic observation, desired two dimensional crystal, the general 4 layers of left side of sample of screening are filtered out using the contrast of light microscope
It is right；Then sample is shifted, shown in its step such as Fig. 1 (b), the hBN (hexagonal boron nitride) of a thickness is transferred to silicon substrate in advance
On as insulating barrier, PDMS is contacted with covering hBN silicon substrate, then PDMS is slowly opened, such two dimensional crystal is branched to
On silicon substrate.
Step 3, by means of light microscope, few layer of two-dimentional crystal of molybdenum disulfide is covered in by few layer graphene of acquisition
On, using van der waals force by few layer graphene and the two-dimentional step 3 of few layer, by means of light microscope, by few layer of acquisition
Graphene is covered in few layer of two-dimentional crystal of molybdenum disulfide, will few layer graphene and two-dimentional two sulphur of few layer using van der waals force
Change molybdenum crystal combination and constitute heterojunction structure together.Crystal combination constitutes heterojunction structure together.
Step 4, the preparation based on the heterogeneous section transistor of two-dimensional graphene and molybdenum disulfide：Its structural representation such as Fig. 4 institutes
Show, for preparing is shown in light microscopic hypograph such as Fig. 3 (a) based on two-dimensional graphene and molybdenum disulfide hetero-junctions；Use acetone soln
Silicon chip of the immersion with layer material；One layer of PMMA photoresist of quick spin coating, speed is 5000 rpms, and thickness is received for 200
Rice；The silicon chip for coating photoresist is put on hot plate and toasted, baking temperature is 180 degrees Celsius, 1 minute time；Silicon chip is put
Mask plate, the exposure of electrode is carried out with electron beam exposure apparatus；It is 1 with mass ratio:3 methylisobutylketone and isopropanol mixed liquor is made
For developing liquid developing, and with IPA it is fixing after dried up with drying nitrogen, the developing liquid developing time is 40 seconds, and fixing time is 30 seconds；
Electron beam evaporation is in substrate and based on two-dimensional graphene and step 3, by means of light microscope, by few layer graphene of acquisition
It is covered in few layer of two-dimentional crystal of molybdenum disulfide, using van der waals force will layer graphene and the two-dimentional molybdenum disulfide of few layer be brilliant less
Body is combined together to form heterojunction structure.Deposited metal thin film electrode layer on hetero-junctions, the metal electricity of electron-beam evaporation
The extremely titanium of 10 nanometer thickness and the gold of 60 nanometer thickness.
Embodiment three
Step one, two-dimensional graphene and two selenizing molybdenum crystal are prepared first, shown in its step such as Fig. 1 (a), by PET pad pastings
Two 2 × 5cm oblong-shaped is cut into, two high purity graphites or two selenizing molybdenum crystal are placed between two panels PET film adhesive faces,
Two panels PET film is set constantly to be contacting and separating, it is thinning and be uniformly paved with PET film surface until visually observing crystal thickness；Make
First several layers of its clean surface of guarantee above PDMS are torn off with preceding with adhesive tape；Then PET film adhesive faces are contacted again with PDMS
PET film is slowly opened, a part of crystal is transferred on PDMS, realize the system of two-dimensional graphene and two selenizing molybdenum crystal prototypes
It is standby.
Step 2, screening, the transfer of two-dimentional two selenizings molybdenum crystal：The PDMS that crystal is carried in step one is taken, is put it to
500 times of micro- Microscopic observation, desired two-dimentional two selenizings molybdenum crystal is filtered out using the contrast of light microscope, screening
General 3 layers or so of sample；Then sample is shifted, shown in its step such as Fig. 1 (b), PDMS is contacted with silicon substrate, then PDMS is delayed
Slowly open, such two dimensional crystal has been branched on silicon substrate.
Step 3, by means of light microscope, the few layer of selenizing molybdenum crystal of two dimension two is covered in by few layer graphene of acquisition
On, using van der waals force hetero-junctions knot will be constituted together with the two-dimentional two selenizing molybdenum crystal combination of few layer graphene and few layer
Structure.
Step 4, the preparation based on the heterogeneous section transistor of two-dimensional graphene and two selenizing molybdenums：Its structural representation such as Fig. 4 institutes
Show, for preparing is shown in light microscopic hypograph such as Fig. 3 (b) based on two-dimensional graphene and molybdenum disulfide hetero-junctions；Use acetone soln
Silicon chip of the immersion with layer material；One layer of PMMA photoresist of quick spin coating, speed is 5000 rpms, and thickness is received for 200
Rice；The silicon chip for coating photoresist is put on hot plate and toasted, baking temperature is 180 degrees Celsius, 1 minute time；Silicon chip is put
Mask plate, the exposure of electrode is carried out with electron beam exposure apparatus；It is 1 with mass ratio:3 methylisobutylketone and isopropanol mixed liquor is made
For developing liquid developing, and with IPA it is fixing after dried up with drying nitrogen, the developing liquid developing time is 40 seconds, and fixing time is 30 seconds；
Electron beam evaporation deposited metal thin film electrode layer on substrate and two-dimentional sulfide, the metal electrode of electron-beam evaporation is 10
The gold of the titanium of nanometer thickness and 60 nanometer thickness.
Embodiment four
Step one, two-dimensional graphene and two-dimentional orpiment crystal are prepared first, will shown in its step such as Fig. 1 (a)
PET pad pastings are cut into two 2 × 5cm oblong-shaped, and two high purity graphites or orpiment crystal are placed in into two panels PET film glues
Between property face, two panels PET film is set constantly to be contacting and separating, it is thinning and be uniformly paved with PET film until visually observing crystal thickness
Surface；First several layers of its clean surface of guarantee above PDMS are torn off before using with adhesive tape；Then by PET film adhesive faces with
PDMS contacts again slowly open PET film, and a part of crystal is transferred on PDMS, realize that two-dimensional graphene and orpiment are brilliant
The preparation of body sample.
Step 2, screening, the transfer of two-dimentional orpiment crystal：The PDMS that crystal is carried in step one is taken, is put
To 500 times of micro- Microscopic observation, desired two dimensional crystal is filtered out using the contrast of light microscope, the sample of screening is thin
General 4 layers or so of region of layer；Then sample is shifted, shown in its step such as Fig. 1 (b), PDMS is contacted with silicon substrate, then by PDMS
Slowly open, so two-dimentional orpiment crystal has been branched on silicon substrate.
Step 3, the preparation of orpiment transistor：Its structural representation is as shown in figure 4, trisulfides two prepared
Arsenic transistor is shown in light microscopic hypograph such as Fig. 3 (c)；The silicon chip with layer material is soaked with acetone soln；Quick spin coating one
Layer PMMA photoresists, speed is 5000 rpms, and thickness is 200 nanometers；The silicon chip for coating photoresist is put on hot plate and dried
Roasting, baking temperature is 180 degrees Celsius, 1 minute time；Silicon chip is put into mask plate, the exposure of electrode is carried out with electron beam exposure apparatus
Light；It is 1 with mass ratio:3 methylisobutylketone and isopropanol mixed liquor as developing liquid developing, and with IPA it is fixing after use drying
Nitrogen is dried up, and the developing liquid developing time is 40 seconds, and fixing time is 30 seconds；Electron beam evaporation is in substrate and two-dimentional orpiment
Upper deposited metal thin film electrode layer, the metal electrode of electron-beam evaporation is the titanium of 5 nanometer thickness and the gold of 60 nanometer thickness.
Claims (6)
1. the invention belongs to transistor arts, and in particular to a kind of field-effect transistor and preparation method thereof, its feature exists
In：Including substrate, the grid on substrate is arranged at, the insulating barrier of gate surface is arranged at, two on above-mentioned insulating barrier are arranged at
Semiconductor layer is tieed up, the source electrode being arranged on the two-dimensional semiconductor layer and drain electrode, the two-dimensional semiconductor layer are broken for crystal structure
Bad few, purity is high, the two-dimentional sulphide crystals group of the graphene of only several atomic layer level thickness and only several atomic layer level thickness
Into hetero-junctions, it is ensured that the electric property of thin film transistor (TFT).
2. field-effect transistor according to claim 1, it is characterised in that：1) backing material can be silicon substrate, also may be used
To be Sapphire Substrate；2) grid material can be substrate silicon simultaneously as grid or Titanium, gold, palladium etc.；3) absolutely
Edge layer can be silica, boron nitride etc.；4) two-dimentional sulphide crystals layer can be tungsten disulfide, molybdenum disulfide, curing
Tin etc.；5) source electrode and drain material can be titanium, gold, palladium etc..
3. according to claim 1 and 2, two dimensional crystal semiconductor layer preparation method meets following feature：Described graphene and two
Dimension sulphide crystals are to use the method for mechanical stripping or prepared using chemical vapour deposition technique, mechanical stripping method operation letter
Single, quick, cost is low, and chemical vapour deposition technique can grow large-area two-dimensional crystal.Described graphene and two dimension vulcanizes
Thickness of the thickness of thing two-dimensional semiconductor in 1-8 atomic layer.
4. according to claim 1,2 and 3, the two-dimensional semiconductor meets following feature using the method for mechanical stripping：1) prepare
Process makes two panels PET film constantly be contacting and separating and reaches and make crystal for crystal is placed between two panels rectangle PET film adhesive faces
Thinning purpose.Then PET film adhesive faces are contacted with PDMS (dimethyl silicone polymer) and separated again, a part of crystal is transferred to
On PDMS, the preparation of sample is realized.Then using light microscope contrast screening two dimensional crystal, then it is shifted from PDMS
Onto silicon substrate；2) wherein PDMS is to incite somebody to actionSubstrate and consolidant are according to 10 in 184 elastomer silicone external members:
1 ratio is mixed, and first several layers of its clean surface of guarantee above are torn off with adhesive tape using preceding；3) wherein PET pad pastings are
The PET material Mobile phone films used in life, its viscosity is weaker easily against Van der Waals for faint between two dimensional crystal；4)
The number of times that PET film is contacting and separating is thinning and be uniformly paved with PET film table until visually observing crystal thickness by make decision
Face, increase separates the probability of individual layer or few layer.
5. according to claim 1 and 2, graphene meets following feature with two-dimentional sulfide hetero-junctions preparation method：1) when preparing
Need to use the sample transport system of two seat moving stage and a high-power microscope composition；2) by means of high magnification microscope and
The two, is accurately effectively sticky deposited in by PDMS light transmission features using the Van der Waals force between graphene and two-dimentional sulphide crystals
Together, the hetero-junctions of two-dimensional material is formed.
6. according to claim 1 and 2, field effect transistor tube preparation method is characterized in that：1) silicon substrate conduct simultaneously can be used
Substrate and grid, the layer of silicon dioxide of surface of silicon plating is as insulating barrier, and the hetero-junctions for forming two-dimensional material is used as conduction
Raceway groove, deposit metal electrodes prepare back grid structure field-effect transistor as source electrode and drain electrode；2) prepare after two dimensional crystal,
The uniform spin coating photoresist on two dimensional crystal, then figure on mask plate is transferred on photoresist by exposure, and use electronics
Beam vapor deposition Ti/Au metals obtain Ti/Au electrodes.
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