CN107068700A - Imaging sensor - Google Patents
Imaging sensor Download PDFInfo
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- CN107068700A CN107068700A CN201611233580.4A CN201611233580A CN107068700A CN 107068700 A CN107068700 A CN 107068700A CN 201611233580 A CN201611233580 A CN 201611233580A CN 107068700 A CN107068700 A CN 107068700A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001914 filtration Methods 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 4
- 230000000994 depressogenic effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention provides a kind of imaging sensor, including：Multiple pixel cells of the array distribution in Semiconductor substrate, each pixel cell includes：Reset transistor, the source electrode connection selection voltage of the reset transistor；Source follows transistor, and the source follows the drain electrode of transistor to connect operating voltage；The Semiconductor substrate connects negative voltage.In the present invention, it is possible to increase source follows the threshold voltage of transistor, reduction source follows the operating voltage needed for transistor drain, so as to reduce the power supply noise of imaging sensor.In addition, source follows the raceway groove of transistor to use buried channel road, further raising source follows the threshold voltage of transistor, so that the source of reducing follows the operating voltage needed for transistor drain.
Description
Technical field
The present invention relates to image sensor technologies field, more particularly to a kind of imaging sensor of reduction power supply noise.
Background technology
Imaging sensor is the important component of digital camera, is a kind of optical imagery to be converted into electrical signal
Equipment, it is widely used in digital camera, mobile terminal, portable electron device and other electro-optical devices.Figure
As sensor is according to the difference of element, CCD can be divided into（Charge Coupled Device, charge coupled cell）And CMOS
（Complementary Metal oxide Semiconductor, CMOS complementary metal-oxide-semiconductor element）Image sensing
The major class of device two.Ccd image sensor except large-scale application in addition to digital camera, be also widely used for video camera, scanner, with
And industrial circle etc..And cmos image sensor is programmable immediately due to its Highgrade integration, low-power consumption and local pixel
Read, speed is fast, low cost and other advantages, is applicable to the fields such as digital camera, PC video cameras, mobile communication product.
With the development continuously and healthily of imaging sensor, its further miniaturization is promoted and integrated.Ccd image is passed
Sensor and cmos image sensor are all to use photoelectric conversion regions, typically using photodiode（Photodiode or
Photodetector）Incident light is collected, and is converted into and can carry out the optical charge of image procossing.Existing cmos image
In sensor, the pel array of several pixel cells composition receives incident light, collects photon.Pixel cell often using 3T,
4T or 5T structure, by taking 4T as an example, by transfering transistor（Transfer Transistor、TX）, reset transistor（Reset
Transistor、RST）, source follow transistor（Source-Follower Transistor、SF）, row gate tube（Row
Selector Transistor、RSEL）, basic operation principle is：By opto-electronic conversion formation photo-generated carrier, mould is produced
Intend signal, read by the ranks of going forward side by side of the row gating to pel array, read the analog signal of each column, carry out follow-up computing and increase
The signal processings such as beneficial amplification, analog-to-digital conversion.
The source of pixel follows the noise of transistor power supply to be capacitively coupled to pixel cell in real work
Floating diffusion region FD on, then by signal path be exaggerated, analog-to-digital conversion（AD）Embodied after conversion in output data,
Influence signal noise ratio (snr) of image.Common practices is that a low-dropout linear voltage-regulating circuit is individually done for image element circuit（Low Dropout
Regulator, LDO）, to reduce influence of the externally fed power supply noise to picture quality.Using while LDO, it is necessary to improve
Source follows the threshold voltage of transistor, so that it is linear that source will not be caused to follow transistor to enter while drain voltage is reduced
Area, can cause source to follow the noise of transistor to increase however, improving threshold voltage.
The content of the invention
It is an object of the invention to provide a kind of imaging sensor, the source in the prior art that solves follows transistor power supply to introduce
The technical problem of noise.
In order to solve the above-mentioned technical problem, the present invention provides a kind of imaging sensor, including：Array distribution is served as a contrast in semiconductor
Multiple pixel cells in bottom, each pixel cell includes：Reset transistor, the source electrode connection selection electricity of the reset transistor
Pressure；Source follows transistor, and the source follows the drain electrode of transistor to connect operating voltage；The Semiconductor substrate connects negative voltage.
Optionally, the negative voltage of the Semiconductor substrate connection -2.0V ~ 0V.
Optionally, in addition to：Noise filtering circuit, the noise filtering circuit provide the operating voltage to the source with
With the drain electrode of transistor.
Optionally, the source follows the drain electrode of transistor to connect 1.0V ~ 2.0V operating voltage.
Optionally, the noise filtering circuit is low-dropout linear voltage-regulating circuit.
Optionally, the noise filtering circuit provides the selection voltage to the source electrode of the reset transistor, described multiple
The source electrode of bit transistor connects 1.0V ~ 2.0V selection voltage.
Optionally, in addition to：It is arranged at the source and follows the channel region of transistor close to the of grid oxic horizon inner surface
One n-type doping region.
Optionally, in addition to：It is set in turn in the source and follows the channel region of transistor along the inside p-type of grid oxic horizon
Doped region and the second n-type doping region.
Relative to prior art, imaging sensor of the invention has the advantages that：
In the present invention, imaging sensor includes array distribution multiple pixel cells in Semiconductor substrate, each pixel cell
Including：Reset transistor, the source electrode connection selection voltage of the reset transistor；Source follows transistor, and the source follows crystal
The drain electrode connection operating voltage of pipe；The Semiconductor substrate connects negative voltage, and raising source follows the threshold voltage of transistor, reduces
Source follows the operating voltage needed for transistor drain, so as to reduce the power supply noise of imaging sensor.
In addition, source follows the raceway groove of transistor to use buried channel road, further raising source follows the threshold voltage of transistor, from
And reduction source follows the operating voltage needed for transistor drain.
Brief description of the drawings
Fig. 1 is the schematic diagram of pixel cell arrangement in one embodiment of the invention；
Fig. 2 be one embodiment of the invention in pixel cell electrical block diagram.
Embodiment
Many details are elaborated in the following description to fully understand the present invention.But the present invention can be with
Much it is different from other manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not limited to the specific embodiments disclosed below.
Secondly, the present invention is described in detail using schematic diagram, when the embodiment of the present invention is described in detail, for purposes of illustration only, institute
It is example to state schematic diagram, and it should not limit the scope of protection of the invention herein.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with accompanying drawing to the present invention
Imaging sensor be described in detail.
With reference to shown in Fig. 1, the present invention provides a kind of imaging sensor, and imaging sensor includes array distribution in semiconductor
Multiple pixel cells 11 in substrate 10 and the peripheral circuit being connected to around the pixel cell of array distribution, pixel cell 11
Electric signal is changed into for sensing optical signal, and by optical signal, and is exported by peripheral circuit.With reference to shown in Fig. 2, each pixel list
Member 11 includes reset transistor RST, source and follows transistor SF, transfering transistor TX and a photodiode PD, wherein, it is described multiple
Bit transistor RST source electrode connection selection voltage SEL, drain electrode connection source follows transistor SF grid, and grid connection resets letter
Number, the source follows transistor SF drain electrode to connect operating voltage VDD, source electrode connection output signal line pxd, transfering transistor TX
Source electrode connection photodiode PD, drain electrode connection source follows transistor SF grid.
In the present embodiment, the Semiconductor substrate 10 connects negative voltage, and the Semiconductor substrate 10 connects -2.0V ~ 0V's
Negative voltage, for example, Semiconductor substrate 10 connects -1.0V voltage.In addition, the imaging sensor of the present invention also includes noise filtering
Circuit（Not shown in figure）, noise filtering circuit is connected in the drain electrode that source follows transistor SF, the present embodiment, noise filtering electricity
Road can be low-dropout linear voltage-regulating circuit, and the low-dropout linear voltage-regulating circuit provides the operating voltage VDD to the source
Follow transistor SF drain electrode.For example, the source follows transistor SF drain electrode to connect 1.0V ~ 2.0V operating voltage.Due to
Semiconductor substrate 10 connects negative voltage, transistor SF threshold voltage is followed therefore, it is possible to the source of improving, so that source follows transistor
SF drain voltage can use less magnitude of voltage.For example, when Semiconductor substrate connects -1V voltage, source follows transistor
Operating voltage needed for SF drain electrodes can be reduced to -1.8V by -2.8V, i.e., can reduce the negative voltage of Semiconductor substrate connection
Value, so as to reduce due to the noise of the introducing in power supply signal.
Likewise, the noise filtering circuit of the imaging sensor mesolow difference linear voltage-stabilizing circuit of the present invention is also connected with resetting
Transistor RST source electrode, the source electrode of the low-dropout linear voltage-regulating circuit offer selection voltage to reset transistor RST, due to
Semiconductor substrate 10 connects negative voltage, so that source follows transistor SF drain voltage to use less magnitude of voltage.For example,
The source electrode of the reset transistor RST connects 1.0V ~ 2.0V selection voltage.
Further, it can also be used in the present invention by following transistor SF raceway groove region to set buried channel road in source
Transistor SF threshold voltage is followed in raising source.Specifically, Semiconductor substrate 10 in the present embodiment is P type substrate, source with
It is arranged at transistor in the N traps in Semiconductor substrate 10, transistor SF channel region is followed close to gate oxidation in the source
Layer the first n-type doping of inner surface setting region, follows transistor SF raceway groove region to set buried channel road, raising source is followed in source
Transistor SF threshold voltage, so that the source of reducing follows the operating voltage needed for transistor, reduction source follows transistor power supply electricity
Press the power supply noise introduced.In addition, setting the method in buried channel road in the present invention and in being limited to set the n-type doping region, at this
In the other embodiment of invention, transistor SF channel region is followed inwardly to set p-type to mix along grid oxic horizon in the source successively
Miscellaneous region and the second n-type doping region, this is also within protection scope of the present invention.
In summary, the present invention is provided in imaging sensor, including array distribution multiple pixels in Semiconductor substrate
Unit, each pixel cell includes：Reset transistor, the source electrode connection selection voltage of the reset transistor；Source follows crystal
Pipe, the source follows the drain electrode of transistor to connect operating voltage；The Semiconductor substrate connects negative voltage, and raising source follows crystal
The threshold voltage of pipe, reduction source follows the operating voltage needed for transistor drain, so as to reduce the power supply noise of imaging sensor.
In addition, source follows the raceway groove of transistor to use buried channel road, further raising source follows the threshold voltage of transistor, from
And reduction source follows the operating voltage needed for transistor drain.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above to this hair
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Any simple modifications, equivalents, and modifications made to above example of technical spirit, belong to technical solution of the present invention
Protection domain.
Claims (8)
1. a kind of imaging sensor, it is characterised in that including：Multiple pixel cells of the array distribution in Semiconductor substrate, often
Individual pixel cell includes：Reset transistor, the source electrode connection selection voltage of the reset transistor；Source follows transistor, described
Source follows the drain electrode of transistor to connect operating voltage；The Semiconductor substrate connects negative voltage.
2. imaging sensor according to claim 1, it is characterised in that the Semiconductor substrate connection -2.0V ~ 0V's is negative
Voltage.
3. imaging sensor according to claim 1, it is characterised in that also include：Noise filtering circuit, the noise filter
Except circuit provides the drain electrode that the operating voltage follows transistor to the source.
4. imaging sensor according to claim 3, it is characterised in that the source follows the drain electrode of transistor to connect 1.0V
~ 2.0V operating voltage.
5. imaging sensor according to claim 3, it is characterised in that the noise filtering circuit is that low pressure difference linearity is steady
Volt circuit.
6. imaging sensor according to claim 3, it is characterised in that the noise filtering circuit provides the selection electricity
The source electrode of the reset transistor is depressed into, the source electrode of the reset transistor connects 1.0V ~ 2.0V selection voltage.
7. imaging sensor according to claim 1, it is characterised in that also include：It is arranged at the source and follows transistor
Channel region close to the first n-type doping region of grid oxic horizon inner surface.
8. imaging sensor according to claim 1, it is characterised in that also include：It is set in turn in the source and follows crystalline substance
The channel region of body pipe is along the inside p-type doped region of grid oxic horizon and the second n-type doping region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611233580.4A CN107068700A (en) | 2016-12-28 | 2016-12-28 | Imaging sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611233580.4A CN107068700A (en) | 2016-12-28 | 2016-12-28 | Imaging sensor |
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| Publication Number | Publication Date |
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| CN107068700A true CN107068700A (en) | 2017-08-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114995564A (en) * | 2022-05-09 | 2022-09-02 | 上海艾为电子技术股份有限公司 | Starting circuit, starting method and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652344A (en) * | 2004-02-04 | 2005-08-10 | 豪威科技有限公司 | Image sensor formed on an n-type substrate |
| CN102186024A (en) * | 2005-11-01 | 2011-09-14 | 索尼株式会社 | Physical quantity detecting device and imaging apparatus |
| CN105100651A (en) * | 2015-06-03 | 2015-11-25 | 格科微电子（上海）有限公司 | Image sensor and method for reducing noise of image sensor |
| CN206471331U (en) * | 2016-12-28 | 2017-09-05 | 格科微电子（上海）有限公司 | Imaging sensor |
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2016
- 2016-12-28 CN CN201611233580.4A patent/CN107068700A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652344A (en) * | 2004-02-04 | 2005-08-10 | 豪威科技有限公司 | Image sensor formed on an n-type substrate |
| CN102186024A (en) * | 2005-11-01 | 2011-09-14 | 索尼株式会社 | Physical quantity detecting device and imaging apparatus |
| CN105100651A (en) * | 2015-06-03 | 2015-11-25 | 格科微电子（上海）有限公司 | Image sensor and method for reducing noise of image sensor |
| CN206471331U (en) * | 2016-12-28 | 2017-09-05 | 格科微电子（上海）有限公司 | Imaging sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114995564A (en) * | 2022-05-09 | 2022-09-02 | 上海艾为电子技术股份有限公司 | Starting circuit, starting method and electronic equipment |
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