CN107052913A - RB SiC optical element glossing processing methods - Google Patents
RB SiC optical element glossing processing methods Download PDFInfo
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- CN107052913A CN107052913A CN201710397592.9A CN201710397592A CN107052913A CN 107052913 A CN107052913 A CN 107052913A CN 201710397592 A CN201710397592 A CN 201710397592A CN 107052913 A CN107052913 A CN 107052913A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
Abstract
The invention discloses a kind of RB SiC optical elements glossing processing method, this method realizes the fine-grinding and polishing of RB SiC optical elements first with inductively coupled plasma polishing technology, realizes optical element super smooth surface processing in optical surface deposition nanoscale planarization layer, finally using ion beam polishing correction of the flank shape technology auxiliary free radical microwave plasma polishing technology using rf magnetron sputtering surface planarisation technology afterwards.Compared to prior art, the present invention utilizes the traditional optical manufacturing method of plasma polishing technical substitution, with reference to nano level planarization layer technology of preparing and ion beam correction of the flank shape polishing technology, the process-cycle of Large diameter RB SiC elements is highly shortened, is constructed with high efficiency, high-precision and low-loss feature RB SiC optical element polishing new methods.
Description
Technical field
The present invention relates to the present invention relates to optical element surface ultra-smooth precision processing technology field, more particularly to RB-SiC
Optical element glossing processing method.
Background technology
In recent years, flourishing with Aero-Space cause, social production made rapid progress, spy of the mankind to space field
Rope enthusiasm is more and more stronger, and aeronautical and space technology is that the mankind observe space, the research earth and entirely the cosmic space of vastness is made
Major contribution.Many countries start to pay attention to the research to aeronautical and space technology and space optics, and space telescope, remote sensing are detectd
The Large Space Systems such as camera are examined in order to meet use requirement, it is necessary to possess sufficiently high resolution ratio and sufficiently large bore, but
The increase of bore, can increase the weight of whole optical system accordingly, therefore, not only need to improve the imaging matter of optical system
Amount, and need to mitigate its weight, to reduce launch cost, people's material just to Space Optical System speculum and manufacture work
Skill proposes certain require.
Carborundum（SiC）As a kind of new spacing reflection mirror rapidoprint, it has relatively low density, intensity and elasticity
The series of advantages such as modulus is higher, thermal coefficient of expansion is smaller, heat conductivility is good, chemical stability is high, as preferable big mouth
Footpath, light-weighted mirror base material.Since the end of the seventies in last century, the developed country such as the U.S., Germany, Japan is to SiC materials
Material has done many researchs applied to mirror substrate, have accumulated abundant research experience, China start to walk in this respect it is relatively later,
Certain achievement in research is also achieved in nearest several years.
Reaction sintering is as a kind of method for preparing SiC speculums, and its technique is simple, sintering temperature is low, is to prepare greatly
Bore, complicated shape silicon carbide reaction-sintered（RB-SiC）The method that material is preferentially selected.
The material with two phase structure that RB-SiC is made up of Si and SiC（Si contents account for 14%）, due to the two physics
The difference of characteristic, causes the removal rate of Si in polishing process faster than SiC, causes under RB-SiC surface of polished quality
Drop, roughness increase, reflectivity reduces, and scattering phenomenon is serious, and the requirement of high-quality ultra-smooth optical system can not be met at all.
Existing RB-SiC polishing methods are ground by the accurate optical-mechanical physics Institute in Changchun and Chinese Academy of Sciences's Chemical Physics
Study carefully institute（Patent of invention：Grant number 200710159200.1）Propose a series of based on RB-SiC surfaces modification depositing operation side
Method, its core is that pilot process is beneficial to film plating process and deposits a few micrometers of Si films to some tens of pm in surface of SiC（Or its
His material modification layer）.
At present in the Material Field, a kind of RB-SiC processing methods being modified based on magnetron sputtering of main development, specifically
Process is：
The first step, using traditional grinding processing method, carries out grinding so that the surface roughness Ra of material reaches to SiC
To below 10nm（Or RMS reaches below 20nm,）Optical interferometry can be carried out；
Second step, using magnetically controlled sputter method, the Si films of some tens of pm is deposited on RB-SiC surfaces, the core of this method exists
In RB-SiC application, which is essentially consisted in, realizes optics high reflection, therefore, and sufficiently thick Si is deposited in RB-SiC substrates and is modified
Layer, because Si films are relative to RB-SiC, bill of materials one, hardness is low, it is easy to process；
3rd step, using numerical control small tool polishing method, is polished to the Si films being deposited on RB-SiC, realizes ultra-smooth
Surface Machining and face shape amendment.
There is following Railway Project in existing traditional optical processing method, first is that processing efficiency is low, and the cycle is long, and second
It is, it is difficult to large area（General size is more than 150mm）Realize super-smooth surface（Roughness RMS be less than 1nm, face shape RMS less than λ/
5）.Because：Magnetron sputtering deposition speed is not high, deposits the Si layers of tens of micrometers thick, causes process time longer, second,
Magnetron sputtering deposition Si films, when reaching micron dimension with thickness, the roughness of film will be deteriorated, generally bad by 7 ~ 8nm
Change to more than ten nanometers.
In consideration of it, RB-SiC optical element surface roughness can be reduced by how designing one kind, the ultraphotic of surface quality is improved
In particular how sliding method of surface finish, design a kind of easy to operate, surface polishing processing method for being easily achieved, effectively control
Optical element surface face shape, suppresses surface and sub-surface damage, reduction surface optical loss.
The content of the invention
The material surface Quality Down caused by RB-SiC, surface roughness are polished for existing tradition machinery polishing method
Larger, material surface sub-surface damage is serious, especially, the process-cycle of overlength and extremely low processing efficiency, mesh of the invention
Be to provide RB-SiC optical element glossing processing methods, the problem of overcoming in the presence of the material finish method.
To achieve these goals, the technical solution adopted in the present invention is：
RB-SiC optical element glossing processing methods, comprise the following steps：
Step 1, lithography is polished to RB-SiC blank materials first, realizes the accurate grinding of optical element, make optics member
Part surface roughness value is converged within 20 nanometers；
Step 2, radiofrequency magnetron sputtering technology is utilized（RF-MS）Nanoscale planarization layer is deposited in RB-SiC optical element surfaces；
Step 3, free radical microwave plasma source technology is utilized（RPS）The planarization layer that RB-SiC substrate surfaces are deposited is carried out
Polishing, using free radical plasma technique, by plasma confinement within plasma source body, passes through vacuum chamber stream
Control is led, large area uniform activity free radical is formed so that with planarization layer material chemistry chemical reaction occurs for active group, realizes
Optical element surface design is processed；
Step 4, ion beam correction of the flank shape polishing technology is utilized（IBF）, correction of the flank shape and polishing are carried out to optical element surface planarization layer, led to
The high certainty removal to surface is crossed, the shape amendment of optical element surface face is realized.
ICP etches burnishing device, its base vacuum 2.0 × 10 in the step 1-4Pa, working vacuum control 0.5 ~
10Pa。
Initial blank material surface roughness RMS>During 100nm, substrate bias power maintains 100 ~ 150W, and reactivity gas are used
High-purity carbon tetrafluoride（Purity 99.99%）.
For RMS>100nm Initial R B-SiC workpiece, radio-frequency power 150W, substrate bias power 150W, etching gas flow is
25 ~ 30sccm, 2 ~ 5Pa of operating air pressure.
13.56MHz radio-frequency ion source is used in the step 4, is added using three-dimensional motion control system control ion gun
Work track and residence time, use vacuum chamber base vacuum 1.0 × 10-4Pa, with high purity argon（Purity 99.99%）For
Working gas.
Working vacuum degree 1.2Pa in step 2, target power density is controlled in 5 ~ 10W/cm2。
Controlled in step 3 by vacuum gas conductance and vacuum pumping speed, form uniformity<5% active base, during polishing
Typical vacuum is in 50 ~ 100Pa.
The control of step 4 ion beam energy is in below 800eV, and beam spot size is controlled in below 10mm, and etching efficiency 1.0 ×
10-3~0.02mm3/min。
The method of the invention has advantages below：
1st, this processing method greatly shortens the process-cycle of existing processing method, improves efficiency.This is mainly reflected in,
Just throw the stage, ICP plasma etchings processing method is directly applied to SiC crude green body Surface Machinings by the invention, is passed through
Process optimization, utilizes the ratio adjustment to fluoro-gas and oxygen, it is possible to achieve surface of SiC roughness is reached by RMS100 ~ 200nm
To RMS10 ~ 20nm, face shape is better than 4 microns, improves processing efficiency, thoroughly solve conventional method and be difficult to high rigidity
Process-cycle can be shortened 1/3 ~ 1/2 by SiC material, this method；
2nd, the thinking of method of modifying is to be difficult to process based on RB-SiC is brittle in traditional handicraft, and material component is complicated（Include
The Si and SiC of different proportion）, it is all in small tool polishing or traditional Grinding Process because its component is inconsistent, lead
Cause the difference of not jljl phase Si and SiC removal efficiency, as a consequence it is hardly possible to realize that smooth surface is processed, then, method of modifying
It is suggested, its core is that sufficiently thick Si layers are deposited on RB-SiC surfaces, as long as can guarantee that it is closed with substrate RB-SiC films base junction
Intensity, follow-up method is only that silicon layer is polished, and the polishing of substrate RB-SiC materials is not related to, so, modified method
Deposited silicon layer must be made sufficiently thick, to avoid subsequent processes from being machined to substrate.The present invention is during magnetron sputtering deposition, only
100 ~ 500nm Si planarization layers need to be coated with, and modified method needs to be coated with 2 ~ 200 μm, due to medium frequency magnetron sputtering deposition
Speed is relatively low, and in this process procedure, the present invention uses method processing efficiency to be also significantly better than existing processing method；
3rd, it is that surface is modified using the purpose of magnetron sputtering deposition silicon layer in traditional handicraft, and the present invention uses magnetron sputtering deposition
The purpose of silicon layer is planarization, and material surface quality can be achieved one in thicknesses of layers when within hundreds of nanometers, after thin film deposition
Determine the optimization in degree, be mainly manifested in surface roughness and diminish, intermediate frequency mismachining tolerance diminishes, patent of the present invention is just based on this
Consider, in film deposition process, by optimizing and revising technological parameter, under conditions of film substrate bond strength is ensured, be coated with 100
~ 500nm film layers, can be optimized to below RMS2nm by material surface roughness；
4th, exciting for reactive fluorochemical gas is realized using plasma（Note, it is not necessary to ionization）, acted on using these active groups
In material surface, due to inhibiting the effect of active ion or other ions, therefore physical sputtering will not occur in polishing process
Corrasion, and merely with Si and SiC and the chemical reaction of fluorine-containing active group, realize that large area uniformly etches polishing, effectively suppression
Planarization layer has been made to be cracked or come off with film layer caused by the thermal mismatch problem of optical element substrate, and due to its reaction speed
It is to be determined by the concentration of active group, so, the etching precision of surface planarisation layer nanometer scale can be easily carried out, preceding
On the basis of the step of face, material surface roughness is further set to be reduced to below RMS1nm；
5th, ion beam polishing correction method is at present in noncontact polishes correction method using a kind of more ripe method, to be somebody's turn to do
Method can not be directly used in the polishing correction of the flank shape of RB-SiC materials, and its reason is also to be that jljl phase does not splash quarter efficiency to RB-SiC
Difference, and cause face shape in polishing process to deteriorate.And in the present invention, due to having planarization layer using magnetron sputtering deposition, therefore
Ion beam polishing correction method can be done directly on Si film surfaces, and the face shape for realizing large area optical element is kept；
6th, it is noncontact based on plasma polishing and ion beam polishing processing that polishing method of the present invention, which is,
Contact stress and strain are not present in processing, etching process, unified high-precision roughness can be achieved, face shape and surface is being taken into account
While quality, the efficient shaping polishing of optical element can be achieved, greatly improves polishing efficiency, reduces time cost.This
For this crisp and hard materials of SiC, the contact processing method such as traditional diamond-making technique or small tool is thoroughly avoided to element
Surface and sub-surface damage, will not produce stress problem.
Brief description of the drawings
Reader after the embodiment of the present invention has been read referring to the drawings, it will more clearly understand the present invention's
Various aspects.Wherein,
Fig. 1 is the processing process schematic diagram in the embodiment of the present invention；
Fig. 2 is ICP etching operation principle schematic diagrams in the embodiment of the present invention；
Fig. 3 is rf magnetron sputtering principle schematic in the embodiment of the present invention；
Fig. 4 be the embodiment of the present invention in use free radical plasma source principle schematic；
Fig. 5 is the optical element surface roughness test result figure under different process；
Wherein, a is the preliminary silicon carbide reaction-sintered substrate surface roughness test figure after ICP is etched, and b is to be burnt in reaction
The surface roughness test chart that silicon carbide-based basal surface deposits silicon planarization layer is tied, c is that the surface that RPS is etched after planarization layer is thick
Rugosity test chart.
Embodiment
In order that techniques disclosed in this application content it is more detailed with it is complete, can refer to accompanying drawing and the present invention it is following
Various specific embodiments.
A kind of RB-SiC optical elements glossing processing method, comprises the following steps：
Step 1, lithography is polished to RB-SiC blank materials first, realizes the accurate grinding of optical element, make optics member
Part surface roughness value is converged within 20 nanometers；
Step 2, radiofrequency magnetron sputtering technology is utilized（RF-MS）Nanoscale planarization layer is deposited in RB-SiC optical element surfaces；
Step 3, free radical microwave plasma source technology is utilized（RPS）The planarization layer that RB-SiC substrate surfaces are deposited is carried out
Polishing, using free radical plasma technique, by plasma confinement within plasma source body, passes through vacuum chamber stream
Control is led, large area uniform activity free radical is formed so that with planarization layer material chemistry chemical reaction occurs for active group, realizes
Optical element surface design is processed；
Step 4, ion beam correction of the flank shape polishing technology is utilized（IBF）, correction of the flank shape and polishing are carried out to optical element surface planarization layer, led to
The high certainty removal to surface is crossed, the shape amendment of optical element surface face is realized.
ICP etches burnishing device, its base vacuum 2.0 × 10 in the step 1-4Pa, working vacuum control 0.5 ~
10Pa。
Initial blank material surface roughness RMS>During 100nm, substrate bias power maintains 100 ~ 150W, and reactivity gas are used
High-purity carbon tetrafluoride（Purity 99.99%）.
For RMS>100nm Initial R B-SiC workpiece, radio-frequency power 150W, substrate bias power 150W, etching gas flow is
25 ~ 30sccm, 2 ~ 5Pa of operating air pressure.
13.56MHz radio-frequency ion source is used in the step 4, is added using three-dimensional motion control system control ion gun
Work track and residence time, use vacuum chamber base vacuum 1.0 × 10-4Pa, with high purity argon（Purity 99.99%）For
Working gas.
Working vacuum degree 1.2Pa in step 2, target power density is controlled in 5 ~ 10W/cm2。
Controlled in step 3 by vacuum gas conductance and vacuum pumping speed, form uniformity<5% active base, during polishing
Typical vacuum is in 50 ~ 100Pa.
The control of step 4 ion beam energy is in below 800eV, and beam spot size is controlled in below 10mm, and etching efficiency 1.0 ×
10-3~0.02mm3/min。
With reference to the accompanying drawings, the embodiment to various aspects of the present invention is described in further detail.
Silicon carbide reaction-sintered optical element surface processing method for flattening of the present invention, can realize reaction-sintered
The planarization processing effect of carborundum optical element surface, roughness is smaller than 1nm.
Referring to Fig. 1：
The present invention is by ICP plasma polishings technology, rf magnetron sputtering planarization layer deposition technique（RF-MS）, free radical etc.
Plasma source polishing technology（PR2）It is combined with ion beam correction of the flank shape polishing technology, builds the glossing flow of complete set.Should
The basic ideas of process are the lossless polishing that RB-SiC optical elements are realized using plasma technique, overcome traditional light
Stress and damage problem that processing method is introduced are learned, the second is using physical gas-phase deposite method, using in optical element surface
The thinking of deposited planarization layer, while optical element surface roughness is improved so that optical element surface material sameization,
So that ion beam correction of the flank shape is finished into possibility, and nano level planarization layer thickness then ensure that the efficient of process cycle
Property.
To realize as above purpose, the concrete scheme of patent of the present invention is：
1）Processing is performed etching first with what ICP polished that lithographic technique realizes RB-SiC blank samples, for different roughness
Optical element, emphatically by substrate bias power and reaction gas flow technological parameter, make the surface of optical element blank sample thick
Rugosity value converges on less than 20 nanometers, realizes the fine grinding of optical element sample and throws bright process.
2）Afterwards, the RB-SiC workpiece surfaces deposition Si planarizations using radiofrequency magnetron sputtering technology after fine grinding throwing is bright
Layer, by the target power density during rf magnetron sputtering, the parameter such as gas mass flow, operating air pressure is adjusted, really
Fixed suitable sedimentation rate 15nm/min ~ 20nm/min）, rotated by optical element, realize Si planarization layer uniform depositions, and
Optical element surface roughness value is set to be down to below 2nm, while to ensure that subsequent ion beam correction of the flank shape technique needs, planarizing thickness
Degree control is in 100 ~ 500nm.
3）The planarization layer that 3rd step is deposited using RPS etching polishing technologies to RB-SiC surfaces performs etching polishing, profit
Large area can be realized with this method（>Ф300mm bores）The polishing of complex surface, RPS technologies pass through the micro- of 2.45GHz
Wave excitation source so that N2Pneumoelectric is from plasma is formed, due to not applying any extraction electrode, plasma is constrained on etc. from
Inside daughter source, the fluoro-gas and oxygen isoreactivity gas for being now passed through high-purity are activated in the presence of plasma,
The active gases of a small amount of ionization is still constrained on inside plasma source, and the substantial amounts of active group being activated, in vacuum-flow
Under the control led, the homogeneity range of a large area is formd, optical element surface is directly acted on, pass through active group gas and Si
Chemical reaction, realize polishing effect, final optimization pass surface roughness to below 1nm.
4）Finally, the RB-SiC optical elements after being polished using ion beam polishing technology to RPS carry out ion beam correction of the flank shape throwing
Light, by removing function to the adjustment control of ion gun characteristic parameter, then by actual face shape and preferable face shape difference, obtains member
Part surface each point residence time, by three-dimensional motion control system, realizes the face shape amendment for learning element, tru(e)ing face shape up to 1/5 ~
1/10λ。
Embodiment 1：
1）ICP is etched：Referring to Fig. 2, the base vacuum 2.0 × 10 of ICP etching apparatus vacuum chambers-4Pa, working vacuum control exists
0.5~10Pa .By bore 150mm, thickness 10mm silicon carbide reaction-sintered sample（RMS is in 209.72nm）It is put into ICP etchings
On the base station of equipment vacuum chamber, open take out valve, preceding step valve in advance successively, when compound vacuum gauge atmospheric pressure value is down to 5Pa, opens and divide
Sub- pump, presses start button, treats that molecular pump rotating speed reaches 400r/min, opens high threshold, simultaneously close off it is pre- take out valve, when composite evacuated
Count atmospheric pressure value and be less than 10-1During Pa, by CF on gas flowmeter4Gas flowmeter switch pushes valve control position, regulation flowmeter
Two kinds of gas flows are respectively set to 25sccm and then open gas main valve, adjusted high threshold, allow stable gas pressure in 1Pa by knob,
Etch period is set to 3000s by passage time controller, and radio-frequency power supply and grid bias power supply, regulation matching rotation are now opened simultaneously
Button, is set to 150W by radio-frequency power and substrate bias power respectively, after end to be etched, closes gas main valve, gas successively in order
Flowmeter body switch, molecular pump stop button, until molecule revolution speed is reduced to 0, turn off high threshold, preceding step valve, cool down two minutes
Afterwards, charge valve button is pressed, lid-opening button is pressed in inflation after terminating, takes out the print after etching and carry out surface roughness test,
Test result RMS value is 16.702nm.
2）R. f. magnetron sputtering planarization layer：
In silicon carbide reaction-sintered substrate after ICP etchings Si planarization layers are coated with using radiofrequency magnetron sputtering technology.Referring to
Fig. 3, using general radio frequency magnetron sputtering apparatus, sputtering target material used is high-purity silicon target, and purity is 99.9995%, working gas
It is defined as argon gas, purity is 99.99%, and rf frequency is 13.56MHz.Base vacuum is evacuated to 8.0 × 10-4Pa, then by argon gas
Flow set is 40sccm, and operating air pressure is set as 1.2Pa, is splashed while preplating substrate is rotated to correspondence by specimen rotating holder
The top position shot at the target, target-substrate distance is 80mm；Radio-frequency power supply is opened, radio frequency power density is adjusted to 10W/cm2, it is first pre- after electric discharge
15min is sputtered, baffle plate is turned off, deposited film thickness is 386nm；Close radio-frequency power supply, intake valve and molecular pump and vacuum chamber
Flapper valve between room, pressurize annealing 15min, closes ionization gauge, opens charge valve, and inflation takes out sample after terminating, tests it
Surface roughness RMS value is 1.6599nm.
3）RPS etching polishings：Referring to Fig. 3, vacuum chamber is evacuated to base vacuum 2.0 × 10-3Pa, is passed through 500Sccm high-purity
N2（Purity 99.999%）, 2.45GHz microwave power supplys are opened, microwave power supply are set in after 1.5KW, stable 15min, by N2Stream
Amount is down to 100Sccm, is passed through 450SccmCF4（Purity 99.99%）With 30Sccm O2（Purity 99.999%）, adjust vacuum gas
Pumping speed, 60Pa is set in by vacuum, and optical element surface is polished, and after Si planarization layers remove 150nm, test is carved
It is 0.79706nm to lose the surface roughness RMS value after planarization layer.The magnetic line of force of wherein vertical direction distribution exists electron confinement
Near target material surface, extend its movement locus in the plasma, improve electronics and participate in gas molecule collision and ionization process
Probability.
4）Ion beam polishing：Referring to Fig. 4, typical ion gun running parameter is set：Base vacuum 1.0 × 10-4Pa, radio frequency
Power 180W, beam pressure 500V, accelerate gate voltage 100V, argon gas（99.99%）Flow 5Sccm, working vacuum degree 5.0 × 10-2Pa,
Beam spot diameter, control existsФ10 ~ 5mm changes, and determines removal efficiency control 5.0 × 10-3~0.01mm3/ min, change is final real
The face shape amendment of the existing optical element of reality is to 1/10 λ.
In the present embodiment, using 13.56MHz radio-frequency ion source, added using three-dimensional motion control system control ion gun
Work track and residence time, use vacuum chamber base vacuum 1.0 × 10-4Pa, with high purity argon（Purity 99.99%）For
Working gas.
It is to ICP using the gloomy contactless white light interferometer of Taly Surf CCI2000 types of Taylor Hope referring to Fig. 5
Fine-grinding and polishing, magnetron sputtering planarization deposition, and sample surfaces roughness is measured after RPS polishings, wherein, Fig. 5（a）
It is the test point roughness scenario of sample surfaces after ICP fine-grinding and polishings, as seen from the figure, RMS is under the 209.72nm of blank material
RMS16.702nm is down to, after one layer of silicon planarization layer is coated with, sample surfaces roughness drops to RMS1.6599nm（As schemed
5（b）It is shown）, and finally using RPS polishing after, RB-SiC surface roughnesses drop to 0.79706nm, drop to 1nm with
Under, successfully realize super smooth surface processing.
Described above is the preferred embodiment of the present invention, but to those skilled in the art, its content is simultaneously
Embodiment is not limited only to, by reading the specification of the present invention, some changes are made under the premise without departing from the principles of the invention
And change, all technical schemes belonged under thinking of the present invention, the protection domain in the claims in the present invention.
Claims (8)
1.RB-SiC optical element glossing processing methods, comprise the following steps：
Step 1, lithography is polished to RB-SiC blank materials first, realizes the accurate grinding of optical element, make optics member
Part surface roughness value is converged within 20 nanometers；
Step 2, radiofrequency magnetron sputtering technology is utilized（RF-MS）Nanoscale planarization layer is deposited in RB-SiC optical element surfaces；
Step 3, free radical microwave plasma source technology is utilized（RPS）The planarization layer that RB-SiC substrate surfaces are deposited is carried out
Polishing, using free radical plasma technique, by plasma confinement within plasma source body, passes through vacuum chamber stream
Control is led, large area uniform activity free radical is formed so that with planarization layer material chemistry chemical reaction occurs for active group, realizes
Optical element surface design is processed；
Step 4, ion beam correction of the flank shape polishing technology is utilized（IBF）, correction of the flank shape and polishing are carried out to optical element surface planarization layer, led to
The high certainty removal to surface is crossed, the shape amendment of optical element surface face is realized.
2. RB-SiC optical elements glossing processing method according to claim 1, it is characterised in that：The step 1
Middle ICP etches burnishing device, its base vacuum 2.0 × 10-4Pa, working vacuum is controlled in 0.5 ~ 10Pa.
3. RB-SiC optical elements glossing processing method according to claim 2, it is characterised in that：Initial blank material
Surface roughness RMS>During 100nm, substrate bias power maintains 100 ~ 150W, and reactivity gas use high-purity carbon tetrafluoride（It is pure
Degree 99.99%）.
4. RB-SiC optical elements glossing processing method according to claim 3, it is characterised in that：For RMS>
100nm Initial R B-SiC workpiece, radio-frequency power 150W, substrate bias power 150W, etching gas flow are 25 ~ 30sccm, work gas
Press 2 ~ 5Pa.
5. RB-SiC optical elements glossing processing method according to claim 4, it is characterised in that：The step 4
Middle use 13.56MHz radio-frequency ion source, ion gun machining locus and residence time are controlled using three-dimensional motion control system,
Used vacuum chamber base vacuum 1.0 × 10-4Pa, with high purity argon（Purity 99.99%）For working gas.
6. RB-SiC optical elements glossing processing method according to claim 5, it is characterised in that：Work in step 2
Make vacuum 1.2Pa, target power density is controlled in 5 ~ 10W/cm2。
7. RB-SiC optical elements glossing processing method according to claim 6, it is characterised in that：Lead in step 3
Vacuum gas conductance and vacuum pumping speed control are crossed, uniformity is formed<5% active base, during polishing typical vacuum 50 ~
100Pa。
8. RB-SiC optical elements glossing processing method according to claim 7, it is characterised in that：Step 4 ion
Beam energy control etches efficiency 1.0 × 10 in below 800eV, beam spot size control in below 10mm-3~0.02mm3/min。
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| CN112025417A (en) * | 2020-08-20 | 2020-12-04 | 中国兵器科学研究院宁波分院 | Non-contact ion beam polishing method for surface of optical diamond material |
| CN112447473A (en) * | 2019-08-29 | 2021-03-05 | 西安工业大学 | Plasma etching method for large-caliber optical element |
| CN112899620A (en) * | 2019-12-04 | 2021-06-04 | 中国科学院大连化学物理研究所 | Preparation method of SiC substrate surface modification layer |
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