CN105922083A - Surface polishing method of monopotassium phosphate crystals - Google Patents
Surface polishing method of monopotassium phosphate crystals Download PDFInfo
- Publication number
- CN105922083A CN105922083A CN201610271922.5A CN201610271922A CN105922083A CN 105922083 A CN105922083 A CN 105922083A CN 201610271922 A CN201610271922 A CN 201610271922A CN 105922083 A CN105922083 A CN 105922083A
- Authority
- CN
- China
- Prior art keywords
- dihydrogen phosphate
- potassium dihydrogen
- crystalloid
- sample
- monopotassium phosphate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- ing And Chemical Polishing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a surface polishing method of monopotassium phosphate crystals. According to an existing surface polishing technology of the monopotassium phosphate crystals, the problems that the surface roughness is high, the surfaces of the monopotassium phosphate crystals are damaged, or impurities are embedded in the monopotassium phosphate crystals, and periodic tool mark corrugation exists on the surfaces of the monopotassium phosphate crystals exist; according to the method, the surfaces of the monopotassium phosphate crystals are rotatably coated with a planarization layer, the surface roughness of the monopotassium phosphate crystals is lower than 1.5 nm, then, the monopotassium phosphate crystals are subject to low-temperature heat treatment for a certain period, and are placed into a vacuum chamber, ion beam polishing is utilized until the surface planarization layer is completely removed, the smooth surface of the planarization layer is transmitted to the surfaces of the monopotassium phosphate crystals, and the super-smooth surfaces of the monopotassium phosphate crystals are obtained; and in the technical processing process, no mechanical machining stress exists, in the polishing process, the material removing amount can be controlled to be in the atomic order, and the higher polishing effect can be achieved.
Description
Technical field
The present invention relates to Ultraprecision Machining field, be specifically related to a kind of crystal-like surface polishing method of potassium dihydrogen phosphate.
Background technology
Potassium dihydrogen phosphate (KDP) crystalloid is the non-linear optical crystal material of a kind of high-quality, has preferable nonlinear factor and higher laser damage threshold simultaneously, thus extensively does frequency doubling device and photoswitch with it in laser aid.Especially in the high-tech key equipments such as inertial confinement fusion solid state laser facility, light laser weapon, play very important effect.In the optical element used by these key equipments, large scale, high-precision high-quality KDP are widely used in the light path system of high power solid state laser etc..
Due to potassium dihydrogen phosphate (KDP) crystalloid there is deliquescence soft, crisp, easy, to features such as variations in temperature are sensitive, bring great difficulty to high-quality processing request, be acknowledged as one of the most unmanageable optical element at present.To potassium dihydrogen phosphate (KDP) crystalloid optical crystal part, if surface roughness does not reaches requirement, not only influence whether the logical optical property of part, high power laser light is caused to scatter, so that laser output energy and energy density are low during laser target shooting, and plated film will make film layer anti-light laser damage capability significantly weaken on undesirable roughness surface, thus film layer and the damage threshold of material will be reduced, cause a large amount of expensive heavy caliber potassium dihydrogen phosphate (KDP) crystalloid element material and film damage layer.
Domestic and international application mainly has Single point diamond turning o, superfine grinding, MRF (MRF) and the polishing of potassium dihydrogen phosphate (KDP) crystalloid deliquescence in the precision machined technology of potassium dihydrogen phosphate (KDP) crystalloid at present.Due to characteristics such as soft, crisp, the easy deliquescence of potassium dihydrogen phosphate (KDP) crystalloid, above-mentioned process technology and method is made the most inevitably to bring damage or impurity to embed to potassium dihydrogen phosphate (KDP) crystalloid surface, and the requirement that the roughness required in being extremely difficult in the high-tech key equipments such as inertial confinement fusion solid state laser facility, light laser weapon use is less than 1.5nm.The most the most frequently used Single point diamond turning o processing, plane of crystal roughness after its processing is typically above 2nm, but also there is periodic tool marks ripple, these all will have a strong impact on other optical characteristics such as potassium dihydrogen phosphate (KDP) crystal-like laser damage threshold.
PC3-1500 planarization glue is nonphotosensitive smoothing material, and when being mainly used in provisional adhesion between substrate, substrate surface large area planarization process and substrate cutting, mechanical protection processes.Back is thinning separate with wafer after be easy in remover RD3 or RD6 remove.Its main advantage is superior planarization disposal ability.Primary solvent is butyl acetate, can be adjusted the thickness of planarization layer in an experiment by this solvent.
Summary of the invention
It is an object of the invention to provide a kind of crystal-like surface polishing method of potassium dihydrogen phosphate, the surface roughness overcoming prior art to exist is high, bring damage or the problem such as impurity embedding, potassium dihydrogen phosphate (KDP) crystalloid surface existence periodically tool marks ripple to potassium dihydrogen phosphate (KDP) crystalloid surface.
The technical solution adopted in the present invention is:
The crystal-like surface polishing method of potassium dihydrogen phosphate, it is characterised in that:
Realized by following steps:
Step one, at potassium dihydrogen phosphate one layer of planarization layer of crystalloid sample surfaces spin coating, after planarization processes, the surface roughness of sample is less than 1.5nm；
Step 2, by planarization process after potassium dihydrogen phosphate crystalloid sample be placed in vacuum heat treatment furnace, vacuum pressure is less than 1Pa, heat treatment time 1-5 hour, and heat treatment temperature is less than 80 DEG C, heat treatment naturally cools to room temperature in a vacuum chamber after terminating, take out potassium dihydrogen phosphate crystalloid sample；
Step 3, being fixed on the fixture of ion beam etching system by potassium dihydrogen phosphate crystalloid sample, adjust the angle between fixture and ion beam incidence, scope is 30 ° to 60 °；
Step 4, vacuum system is utilized to be extracted into pressure in vacuum tank less than 5 × 10-4The vacuum of Pa, is passed through etching, the working gas of reaction in proportion, and including argon and oxygen, its O2 to Ar ratio scope is 0:13.2 to 6:7.2, gas flow total amount 13.2sccm, regulates vacuum control valve, makes pressure in vacuum tank be maintained at 2 × 10-2Pa to 8 × 10-2Pa；
Step 5, the rotational velocity of alignment jig, control in the range of 5r/min to 30r/min, makes potassium dihydrogen phosphate crystalloid sample and fixture together rotation, to eliminate the inhomogeneities of ion beam；
Step 6, regulation ion source discharge technological parameter, make ion beam that planarization layer and potassium dihydrogen phosphate crystalloid material are had identical etch rate；
Step 7, open potassium dihydrogen phosphate crystalloid sample baffle plate, making ion beam that it is performed etching polishing, until removing planarization layer completely, the super-smooth surface of planarization layer being transferred on potassium dihydrogen phosphate crystalloid；
Step 8: wait 2 hours, when sample temperature is down to room temperature, takes out sample.
Step one uses PC3-1500 glue as planarization layer.
In step 6, ion source discharge technological parameter is: ion energy 200eV to 800eV, ion beam line 10mA to 50mA.
The invention have the advantages that
1. Physical Mechanism removed by material is based on atom sputtering effect, and in polishing process, material removal amount can control to atom magnitude, reaches the highest polishing precision, and potassium dihydrogen phosphate (KDP) crystalloid after polishing can reach super-smooth surface.
2. there is not contact stress and strain in polishing process, therefore after processing, workpiece face shape is good, and surface texture is good.
3. will not introduce impurity after present invention polishing.
4. the present invention is applicable not only to the polishing of potassium dihydrogen phosphate (KDP) crystalloid material, if selecting suitable planarization layer and ion beam technology parameter, applies also for the polishing of other material.
Accompanying drawing explanation
Fig. 1 be the present invention polishing process in each stage schematic diagram.
Wherein, a is KDP plane of crystal primary morphology, and b is the surface topography of spin coating planarization thickness, and c is broken pattern during closing, and d is the KDP plane of crystal pattern removing planarization thickness completely.
Fig. 2 is the schematic diagram of polissoir.
Fig. 3 is potassium dihydrogen phosphate (KDP) the crystalloid surface roughness test result figure after polishing.
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention will be described in detail.
The crystal-like surface polishing method of potassium dihydrogen phosphate that the present invention relates to, constant speed lithographic technique for potassium dihydrogen phosphate (KDP) crystal-like flattening method and planarization layer with potassium dihydrogen phosphate (KDP) crystalloid material, being capable of the high quality polished effect on potassium dihydrogen phosphate (KDP) crystalloid surface, roughness can be less than 1.5nm.Specifically realized by following steps:
Step one, at potassium dihydrogen phosphate one layer of planarization layer of crystalloid sample surfaces spin coating, after planarization processes, the surface roughness of sample is less than 1.5nm；
Step 2, by planarization process after potassium dihydrogen phosphate crystalloid sample be placed in vacuum heat treatment furnace, vacuum pressure is less than 1Pa, heat treatment time 1-5 hour, and heat treatment temperature is less than 80 DEG C, heat treatment naturally cools to room temperature in a vacuum chamber after terminating, take out potassium dihydrogen phosphate crystalloid sample；
Step 3, being fixed on the fixture of ion beam etching system by potassium dihydrogen phosphate crystalloid sample, adjust the angle between fixture and ion beam incidence, scope is 30 ° to 60 °；
Step 4, vacuum system is utilized to be extracted into pressure in vacuum tank less than 5 × 10-4The vacuum of Pa, is passed through etching, the working gas of reaction in proportion, and including argon and oxygen, its O2 to Ar ratio scope is 0:13.2 to 6:7.2, gas flow total amount 13.2sccm, regulates vacuum control valve, makes pressure in vacuum tank be maintained at 2 × 10-2Pa to 8 × 10-2Pa；
Step 5, the rotational velocity of alignment jig, control in the range of 5r/min to 30r/min, makes potassium dihydrogen phosphate crystalloid sample and fixture together rotation, to eliminate the inhomogeneities of ion beam；
Step 6, regulation ion source discharge technological parameter, make ion beam that planarization layer and potassium dihydrogen phosphate crystalloid material are had identical etch rate；
Step 7, open potassium dihydrogen phosphate crystalloid sample baffle plate, making ion beam that it is performed etching polishing, until removing planarization layer completely, the super-smooth surface of planarization layer being transferred on potassium dihydrogen phosphate crystalloid；
Step 8: wait 2 hours, when sample temperature is down to room temperature, takes out sample.
Step one uses PC3-1500 glue as planarization layer.
In step 6, ion source discharge technological parameter is: ion energy 200eV to 800eV, ion beam line 10mA to 50mA.
Embodiment:
At one layer of PC3-1500 planarization layer of KDP plane of crystal spin coating, sacrifice layer is made to have super-smooth surface after planarization processes；KDP crystal prototype after planarization being processed is placed in vacuum heat treatment furnace, vacuum pressure 0.1Pa, heat treatment time 4 hours, heat treatment temperature 75 DEG C, and heat treatment naturally cools to room temperature in a vacuum chamber after terminating, and takes out KDP sample；Being fixed on the fixture of ion beam etching system by KDP sample, the angle adjusted between fixture and ion beam incidence is 45 °；Vacuum system is utilized to be extracted into pressure in vacuum tank less than 5 × 10-4The vacuum of Pa, is passed through working gas: argon 12.2sccm, oxygen 1sccm, regulates vacuum control valve, makes pressure in vacuum tank be maintained at 5 × 10-2Pa；Controlling fixture rotational velocity is 15r/min；Regulation ion source running parameter is ion beam energy 400eV, ion beam line 35mA；Opening baffle plate, make ion beam that it is performed etching polishing, until removing planarization layer completely, the super-smooth surface of planarization layer being transferred on KDP；Wait 2 hours, when sample temperature is down to room temperature, take out sample；Test sample surface roughness Sq is 1.3574nm.
Present disclosure is not limited to cited by embodiment, and the conversion of any equivalence that technical solution of the present invention is taked by those of ordinary skill in the art by reading description of the invention, the claim being the present invention is contained.
Claims (3)
1. the crystal-like surface polishing method of potassium dihydrogen phosphate, it is characterised in that:
Realized by following steps:
Step one, at potassium dihydrogen phosphate one layer of planarization layer of crystalloid sample surfaces spin coating, after planarization processes, the surface roughness of sample is less than 1.5nm；
Step 2, by planarization process after potassium dihydrogen phosphate crystalloid sample be placed in vacuum heat treatment furnace, vacuum pressure is less than 1Pa, heat treatment time 1-5 hour, and heat treatment temperature is less than 80 DEG C, heat treatment naturally cools to room temperature in a vacuum chamber after terminating, take out potassium dihydrogen phosphate crystalloid sample；
Step 3, being fixed on the fixture of ion beam etching system by potassium dihydrogen phosphate crystalloid sample, adjust the angle between fixture and ion beam incidence, scope is 30 ° to 60 °；
Step 4, vacuum system is utilized to be extracted into pressure in vacuum tank less than 5 × 10-4The vacuum of Pa, is passed through etching, the working gas of reaction in proportion, and including argon and oxygen, its O2 to Ar ratio scope is 0:13.2 to 6:7.2, gas flow total amount 13.2sccm, regulates vacuum control valve, makes pressure in vacuum tank be maintained at 2 × 10-2Pa to 8 × 10-2Pa；
Step 5, the rotational velocity of alignment jig, control in the range of 5r/min to 30r/min, makes potassium dihydrogen phosphate crystalloid sample and fixture together rotation, to eliminate the inhomogeneities of ion beam；
Step 6, regulation ion source discharge technological parameter, make ion beam that planarization layer and potassium dihydrogen phosphate crystalloid material are had identical etch rate；
Step 7, open potassium dihydrogen phosphate crystalloid sample baffle plate, making ion beam that it is performed etching polishing, until removing planarization layer completely, the super-smooth surface of planarization layer being transferred on potassium dihydrogen phosphate crystalloid；
Step 8: wait 2 hours, when sample temperature is down to room temperature, takes out sample.
The crystal-like surface polishing method of potassium dihydrogen phosphate the most according to claim 1, it is characterised in that:
Step one uses PC3-1500 glue as planarization layer.
The crystal-like surface polishing method of potassium dihydrogen phosphate the most according to claim 1, it is characterised in that:
In step 6, ion source discharge technological parameter is: ion energy 200eV to 800eV, ion beam line 10mA to 50mA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610271922.5A CN105922083B (en) | 2016-04-28 | 2016-04-28 | The surface polishing method of potassium dihydrogen phosphate crystalloid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610271922.5A CN105922083B (en) | 2016-04-28 | 2016-04-28 | The surface polishing method of potassium dihydrogen phosphate crystalloid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105922083A true CN105922083A (en) | 2016-09-07 |
| CN105922083B CN105922083B (en) | 2018-02-23 |
Family
ID=56837400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610271922.5A Active CN105922083B (en) | 2016-04-28 | 2016-04-28 | The surface polishing method of potassium dihydrogen phosphate crystalloid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105922083B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106683998A (en) * | 2016-11-28 | 2017-05-17 | 中国电子科技集团公司第四十八研究所 | Flexible substrate pretreatment process |
| CN106835035A (en) * | 2017-04-21 | 2017-06-13 | 西安工业大学 | A kind of method of potassium dihydrogen phosphate crystalloid optical surface planarization |
| CN107053486A (en) * | 2017-05-18 | 2017-08-18 | 深圳市瑞德森智能设备有限责任公司 | Composite ceramics turning blank and preparation method thereof |
| CN107052929A (en) * | 2017-05-18 | 2017-08-18 | 深圳市瑞德森智能设备有限责任公司 | Composite ceramics turning blank and preparation method thereof |
| CN107052913A (en) * | 2017-05-31 | 2017-08-18 | 西安工业大学 | RB SiC optical element glossing processing methods |
| CN111257078A (en) * | 2020-02-28 | 2020-06-09 | 西安工业大学 | Method and device for preparing lithium niobate nano domain structure by ion beam irradiation |
| CN111257077A (en) * | 2020-02-28 | 2020-06-09 | 西安工业大学 | Method and device for preparing lithium niobate nanodot domain structure by ion beam irradiation |
| WO2020225225A1 (en) * | 2019-05-06 | 2020-11-12 | Leibniz Institut Für Oberflächenmodifizierung E.V. | Method for smoothing surfaces |
| CN112171205A (en) * | 2020-09-28 | 2021-01-05 | 中国人民解放军国防科技大学 | Ion beam assisted aluminum alloy reflector processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102896558A (en) * | 2012-10-17 | 2013-01-30 | 中国人民解放军国防科学技术大学 | Calcium fluoride single crystal ultra-precision machining method based on chemico-mechanical polishing and ion beam polishing combined process |
| CN103495907A (en) * | 2013-09-24 | 2014-01-08 | 中国科学院高能物理研究所 | Method for polishing side wall of microstructure through ion beam etching technique |
| JP2014168830A (en) * | 2013-03-04 | 2014-09-18 | Nippon Steel & Sumitomo Metal | Grinding method of metal material and grinding device of metal material |
| CN104923463A (en) * | 2015-05-21 | 2015-09-23 | 西安工业大学 | Potassium dihydrogen phosphate (KDP) optical surface planarization method |
| CN105364666A (en) * | 2015-09-29 | 2016-03-02 | 中国人民解放军国防科学技术大学 | Ion beam ultra-smooth machining method for micro crystalline material optical surface |
-
2016
- 2016-04-28 CN CN201610271922.5A patent/CN105922083B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102896558A (en) * | 2012-10-17 | 2013-01-30 | 中国人民解放军国防科学技术大学 | Calcium fluoride single crystal ultra-precision machining method based on chemico-mechanical polishing and ion beam polishing combined process |
| JP2014168830A (en) * | 2013-03-04 | 2014-09-18 | Nippon Steel & Sumitomo Metal | Grinding method of metal material and grinding device of metal material |
| CN103495907A (en) * | 2013-09-24 | 2014-01-08 | 中国科学院高能物理研究所 | Method for polishing side wall of microstructure through ion beam etching technique |
| CN104923463A (en) * | 2015-05-21 | 2015-09-23 | 西安工业大学 | Potassium dihydrogen phosphate (KDP) optical surface planarization method |
| CN105364666A (en) * | 2015-09-29 | 2016-03-02 | 中国人民解放军国防科学技术大学 | Ion beam ultra-smooth machining method for micro crystalline material optical surface |
Non-Patent Citations (1)
| Title |
|---|
| 包强: "离子源工艺参数对BCB胶刻蚀速率和表面粗糙度的影响", 《应用光学》 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106683998A (en) * | 2016-11-28 | 2017-05-17 | 中国电子科技集团公司第四十八研究所 | Flexible substrate pretreatment process |
| CN106835035B (en) * | 2017-04-21 | 2019-01-18 | 西安工业大学 | A kind of method of potassium dihydrogen phosphate crystalloid optical surface planarization |
| CN106835035A (en) * | 2017-04-21 | 2017-06-13 | 西安工业大学 | A kind of method of potassium dihydrogen phosphate crystalloid optical surface planarization |
| CN107053486B (en) * | 2017-05-18 | 2019-11-12 | 深圳市瑞德森智能设备有限责任公司 | Composite ceramics turning blank and preparation method thereof |
| CN107052929A (en) * | 2017-05-18 | 2017-08-18 | 深圳市瑞德森智能设备有限责任公司 | Composite ceramics turning blank and preparation method thereof |
| CN107053486A (en) * | 2017-05-18 | 2017-08-18 | 深圳市瑞德森智能设备有限责任公司 | Composite ceramics turning blank and preparation method thereof |
| CN107052913A (en) * | 2017-05-31 | 2017-08-18 | 西安工业大学 | RB SiC optical element glossing processing methods |
| WO2020225225A1 (en) * | 2019-05-06 | 2020-11-12 | Leibniz Institut Für Oberflächenmodifizierung E.V. | Method for smoothing surfaces |
| CN111257078A (en) * | 2020-02-28 | 2020-06-09 | 西安工业大学 | Method and device for preparing lithium niobate nano domain structure by ion beam irradiation |
| CN111257077A (en) * | 2020-02-28 | 2020-06-09 | 西安工业大学 | Method and device for preparing lithium niobate nanodot domain structure by ion beam irradiation |
| CN111257077B (en) * | 2020-02-28 | 2023-06-02 | 西安工业大学 | Method and device for preparing lithium niobate nano dot domain structure by ion beam irradiation |
| CN111257078B (en) * | 2020-02-28 | 2023-06-02 | 西安工业大学 | Method and device for preparing lithium niobate nano domain structure by ion beam irradiation |
| CN112171205A (en) * | 2020-09-28 | 2021-01-05 | 中国人民解放军国防科技大学 | Ion beam assisted aluminum alloy reflector processing method |
| CN112171205B (en) * | 2020-09-28 | 2022-01-11 | 湖南天创精工科技有限公司 | Ion beam assisted aluminum alloy reflector processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105922083B (en) | 2018-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105922083A (en) | Surface polishing method of monopotassium phosphate crystals | |
| JP4678039B2 (en) | SiC substrate | |
| US8893702B2 (en) | Ductile mode machining methods for hard and brittle components of plasma processing apparatuses | |
| JP4148105B2 (en) | Method for manufacturing SiC substrate | |
| WO2015172588A1 (en) | Thinning method for pyroelectric relaxor ferroelectric single crystal | |
| CN111092148B (en) | Method for manufacturing piezoelectric material composite substrate | |
| US20090297812A1 (en) | Adhesive, hermetic oxide films for metal fluoride optics and method of making same | |
| CN102011106B (en) | Method for flattening diamond film by using composite process | |
| US11339468B2 (en) | Magnetron sputtering scanning method for modifying silicon carbide optical reflector surface and improving surface profile | |
| CN114724931A (en) | Etching process method for regulating and controlling etched material side wall etching slope angle | |
| CN110071212A (en) | The processing method and equipment of high temperature resistant hard brittle material | |
| KR102049806B1 (en) | Method and apparatus for surface planarization of object using light source of specific wavelength and reactive gas | |
| CN108987255A (en) | Diamond-film-like process of surface treatment | |
| US7075094B2 (en) | System, method, and apparatus for ion beam etching process stability using a reference for time scaling subsequent steps | |
| CN108747598B (en) | Multistage ion polishing method for ultra-smooth glass lens | |
| WO2022058743A2 (en) | Method of preparing a silicon carbide wafer | |
| EP4185901A1 (en) | Method for deposition of depth-varying refractive index films | |
| CN108193171B (en) | The manufacturing method of multichannel integrated optical filter optical isolation structure | |
| Hu et al. | In situ investigation of silicon surface cleaning and damage by argon electron cyclotron resonance plasmas | |
| KR102013787B1 (en) | Method and apparatus for surface planarization of ito thin film using visible light source | |
| Toros et al. | Precision Micro-Optical Components in Single Crystal Diamond by Deep Reactive Ion Etching | |
| CN106835035B (en) | A kind of method of potassium dihydrogen phosphate crystalloid optical surface planarization | |
| JP2008267908A (en) | Method for preparing sample for microstructure observation | |
| CN115368031A (en) | Preparation method of chalcogenide glass 8-12um waveband high-durability antireflection film | |
| CN116482804A (en) | Method for preparing waveguide by metal stripping process based on femtosecond light direct writing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |