CN107012426B - The method for preparing barium titanate nano ferroelectric thin film based on pulsed electron beam deposition technology - Google Patents
The method for preparing barium titanate nano ferroelectric thin film based on pulsed electron beam deposition technology Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
Abstract
The invention discloses a kind of methods for preparing barium titanate nano ferroelectricity grade film, specific step is as follows: cleaning target substrate and reaction chamber pollutant first, then it controls reaction chamber oxygen partial pressure and grows barium titanate film, last barium titanate film in-situ annealing, that is, obtain the barium titanate nano ferroelectricity grade film；The present invention bombards barium titanate target material surface using the pulsed electron beam that electric spark tunnel system generates, the energy that target absorbs electron beam, which is converted into thermal energy, makes the plasma that material volatilizees and ionization is formed, it is spread above barium titanate target material surface, reach target substrate surface, forming core film forming, and the deposition velocity and thickness of barium titanate film are further controlled by controlling beam pulse number and pulse frequency, the barium titanate film compactness of preparation is good, surfacing improves the quality of device.
Description
Technical field
The invention belongs to microelectronics technology, in particular to a kind of preparation method of barium titanate nano ferroelectric thin film can
Preparation for ferroelectric thin film and semiconductor devices.
Background technique
Ferroelectric material is a kind of with ferroelectricity, piezoelectricity, high dielectric constant, the functional material of the characteristics such as photo electric.Iron
Conductive film be it is a kind of grown in the particular substrates such as metal, semiconductor or insulator thickness tens nanometer to some tens of pm it
Between film, can well in conjunction with micro-nano system, reduce device size simultaneously realize specific function application.Ferroelectric thin film is
Develop into common one kind thin-film material in microelectronic component and optical device, in household electrical appliances, communication, aerospace and national defence
There is noticeable application in equal fields.In addition to this, ferroelectric thin film computer nonvolatile memory, integrated capacitor,
Microsensor/brake, un-cooled infrared focal plane array and photoelectric device etc. are also with boundless before
Scape.
Barium titanate is that one kind is unleaded, has strong dielectric properties, high dielectric constant, low-dielectric loss, strong piezoelectricity energy and height
The ferroelectric material of photoelectric coefficient is widely studied, applied in " unleaded " piezoelectricity, ferro-electric device.Common barium titanate ferroelectric thin
Membrane preparation method has sol-gel process, Metal Organic Chemical Vapor Deposition, magnetron sputtering, molecular beam epitaxy, pulse to swash
Light deposition etc..Wherein solution-gel method and Metal Organic Chemical Vapor Deposition are produced in batches suitable for large area, but are had
Film defects be mostly not easy the shortcomings that obtaining with presoma.Magnetically controlled sputter method high speed, the film quality of preparation is good, but repeatability
Difference.Molecular beam epitaxy can prepare high crystallinity film, but preparation rate is slow, and cost is very high.Pulse laser deposition growing
Velocity is controllable, can grow the film of Various Complex, but its equipment is expensive, there is certain requirement to laser and target.
Pulsed electron beam deposition technology is a kind of film deposition techniques based on ablation technology, can prepare a variety of film materials
Material, comprising: metal, alloy, polymer, oxide and inorganic salts etc..The principle of its work is as follows: working as pulsed electron beam deposition
When electron beam in system is incident on target material surface by ceramic pipette tips, the surface of reachable target and go deep into surface hereinafter,
And by energy Transient transformation be material thermal energy so that material volatilize, target material surface formed " cloud steam "." cloud steam " continues
It absorbs the energy from pulsed electron beam and is just deposited on the surface of target substrate when its contact target substrate.But it is using
When pulsed electron beam deposition system deposited thin film material, many factors will affect film deposition quality, such as: base reservoir temperature, pulse
Vacuum degree and each partial pressure etc. in voltage, pulse frequency and number, chamber.Currently, utilizing pulsed electron beam deposition system
There is not been reported for the method for system deposition barium titanate nano grade ferroelectric thin film.
Summary of the invention
In view of the above-mentioned problems, the present invention prepares barium titanate nano ferroelectric thin film using the technology of pulsed electron beam deposition,
Under conditions of guaranteeing the quality such as barium titanate film compactness, flatness and ferroelectric property, the requirement to equipment and target is reduced,
Reduce preparation cost.What the present invention was obtained by:
A method of barium titanate nano ferroelectric thin film is prepared based on pulsed electron beam deposition technology, is included the following steps:
1) target substrate is cleaned, target substrate can choose monocrystalline silicon, Sapphire Substrate, metal (such as gold, copper aluminium) material
Material；
2) reaction chamber pollutant is cleared up:
By purity be 99.99% barium titanate target and target substrate be put into the reaction chamber of pulsed electron beam deposition system,
Chamber is vacuumized in the case where molecule pump speed is 1000 Hz, until vacuum degree reaches 1.0 × 10-6 Torr or hereinafter, to ensure
The content of other pollutants such as reaction chamber water, oxygen, organic matter is minimum, avoids the doping and pollution in deposition process；
3) reaction chamber oxygen partial pressure is controlled:
Reduction of speed is carried out to molecular pump, 250 Hz is kept it in, is then oxygenated to chamber, chamber pressure is made to be maintained at 6
×10-3 Torr, it is ensured that the electron beam that deposition process electron gun issues most is concentrated, and target is sufficiently uniformly impacted；
4) barium titanate film is grown:
It heats up to target substrate, in 5 ~ 20 DEG C/min, target temperature is 700 DEG C for heating rate control；It heated up
It is uneven to will lead to substrate heating fastly, influences the deposition of barium titanate；
Adjust gun alignment barium titanate target center, apart from target center height be 5 mm, set electron gun voltage as
10 KV, umber of pulse 13000, frequency are 3 Hz, open electron gun and carry out barium titanate film deposition；
After electron gun end of run, stopping leads to oxygen to chamber, and closes molecular pump；
5) in-situ annealing processing is carried out to barium titanate film:
After molecular pump completely closes, oxygen is led to chamber, until chamber pressure reaches 100 Torr, keeping temperature is 700
DEG C, soaking time is 1 hour, makes annealing treatment with this condition to substrate, barium titanate crystal grain is made sufficiently to grow up.After set
Setting temperature is room temperature, cooling with chamber, and the barium titanate nano ferroelectric thin film in target substrate is obtained after taking-up.
Further, the method for the present invention that barium titanate nano ferroelectric thin film is prepared based on pulsed electron beam deposition technology
In, cleaning target substrate described in step 1) refers to: target substrate being sequentially placed into acetone, isopropanol and ethyl alcohol and is surpassed respectively
Sound cleans (300 W of ultrasonic power) 15 minutes, with being dried with nitrogen after taking-up, that is, completes the cleaning to target substrate.
Compared with prior art, the beneficial effects of the present invention are embodied in:
1) barium titanate film compactness prepared by the present invention is good, surfacing；Vacuum degree by controlling chamber makes film
The impurity contained is few, and surface is clean, eliminates the cleaning that may be needed and polishing process；
2) speed for growing barium titanate film can be controlled simply by the frequency of pulsed electron beam, and film thickness can also
It is controlled with the easy umber of pulse by electron beam, growth course has repeatability convenient for operation and control, and efficiency is higher；
3) relative to the molecular beam epitaxy and pulsed laser deposition technique of the barium titanate film that can obtain high quality, this hair
Bright cost is relatively low, and the requirement to target is lower, reduces the preparation cost and preparation condition of high quality ferroelectric thin film；
4) present invention is lower to the substrate requirements of growing film, can directly on a semiconductor substrate (such as silicon), Metal Substrate
(such as gold) on bottom, (such as sapphire) surface is grown on insulator-base bottom, eliminates the step of transfer needed for preparing ferro-electric device
Suddenly, reduce the impurity that transfer process may introduce, save device preparation cost, improve the quality of device.
Detailed description of the invention
Fig. 1 is the barium titanate nano ferroelectric thin film scanning electron microscope image that embodiment 1 obtains；
Fig. 2 is the image under the barium titanate nano ferroelectric thin film side scanning electron microscope that embodiment 1 obtains；
Fig. 3 is the image of the barium titanate nano ferroelectric thin film surface of the acquisition of embodiment 1 under an atomic force microscope；
Fig. 4 is that the barium titanate nano ferroelectric thin film surface that embodiment 1 obtains is changed under piezoelectricity force microscope by bias
The image in electricdomain direction；
Fig. 5 is the ferroelectric hysteresis loop for the barium titanate nano ferroelectric thin film test that the present embodiment obtains；
Fig. 6 is the image of the barium titanate nano ferroelectric thin film surface of the acquisition of embodiment 2 under a scanning electron microscope；
Fig. 7 is the image of the barium titanate nano ferroelectric thin film surface of the acquisition of embodiment 2 under an atomic force microscope；
Fig. 8 is the ferroelectric hysteresis loop for the barium titanate nano ferroelectric thin film test that embodiment 2 obtains；
Fig. 9 is the image of the barium titanate nano ferroelectric thin film surface of the acquisition of embodiment 3 under a scanning electron microscope；
Figure 10 is the image of the barium titanate nano ferroelectric thin film surface of the acquisition of embodiment 3 under an atomic force microscope；
Figure 11 is the scanning electron microscope diagram on the barium titanate film surface that embodiment 4 obtains；
Figure 12 is the atomic force microscopy diagram on the barium titanate film surface that embodiment 4 obtains；
Figure 13 is the ferroelectric hysteresis loop for the barium titanate film that embodiment 4 obtains.
Specific embodiment
It elaborates with reference to the accompanying drawings and detailed description to the present invention, but the present invention is not limited to following realities
Example.Method described in following embodiments is unless otherwise specified conventional method；The reagent and material etc., such as without special theory
It is bright, commercially obtain.
Reagent and instrument involved in embodiment:
Key instrument:
Pulsed electron beam deposition system: NEOCERA company, the U.S.；
Ultrasonic washing instrument: Kunshan Ultrasonic Instruments Co., Ltd.'s KQ-400KDE type；
Optical microscopy: NIKON Eclipse Lv100NO；
Scanning electron microscope: Hitachi s-4800；
Raman spectrometer: HORIBA JY Labram HR Evolution；
Main agents and material:
Barium titanate target: coming from middle promise green wood (Beijing) Science and Technology Ltd., sample purity 99.99%, and diameter is
25.4mm, with a thickness of 6.35mm, number Ba81407；
Monocrystalline silicon: Hangzhou crystalline substance Boke skill is come from, p-type, crystal orientation<100>, resistivity is 8-12 Ω cm, thickness 500um；
Remaining required reagent is purchased from the western Chemical Co., Ltd. of Alpha.
Embodiment 1
It takes four inch silicon wafers to cut to 1cm*1cm size, is sequentially placed into acetone, isopropanol, carries out ultrasound in ethyl alcohol respectively
Clean each 15min(ultrasonic power 300W), later with being dried with nitrogen.Silicon wafer after cleaning is placed in pulsed electron book deposition chambers
It is interior, it is fixed with substrate with elargol, carries out the growth of barium titanate nano ferroelectric thin film, the specific steps are as follows:
1) reaction chamber pollutant is cleared up:
Barium titanate target and target substrate are put into the reaction chamber of pulsed electron beam deposition system, are in molecule pump speed
Chamber is vacuumized under 1000 Hz, until vacuum degree reaches 1.0 × 10-6 Torr or following；
2) reaction chamber oxygen partial pressure is controlled:
Reduction of speed is carried out to molecular pump, 250 Hz is kept it in, is then oxygenated to chamber, chamber pressure is made to be maintained at 6
×10-3 Torr；
3) barium titanate film is grown:
It heats up to target substrate, in 5 ~ 20 DEG C/min, target temperature is 700 DEG C for heating rate control；Adjust electricity
Sub- rifle is directed at barium titanate target center, is 5 mm apart from target center height, sets electron gun voltage as 10 KV, umber of pulse is
13000, frequency is 3 Hz, opens electron gun and carries out barium titanate film deposition；
After electron gun end of run, stopping leads to oxygen to chamber, and closes molecular pump；
4) in-situ annealing processing is carried out to barium titanate film:
After molecular pump completely closes, oxygen is led to chamber, until chamber pressure reaches 100 Torr, keeping temperature is 700
DEG C, soaking time be 1 hour, substrate is made annealing treatment with this condition, barium titanate crystal grain is made sufficiently to grow up: after set
Setting temperature is room temperature, cooling with chamber, and the barium titanate nano ferroelectric thin film in target substrate is obtained after taking-up.
The barium titanate nano ferroelectric thin film obtained is taken out to be characterized and tested:
Fig. 1 is the image of the barium titanate nano ferroelectric thin film surface of the present embodiment acquisition under a scanning electron microscope, can
To find out that film surface is very smooth.
Fig. 2 is the image of the barium titanate nano ferroelectric thin film side of the present embodiment acquisition under a scanning electron microscope, can
To find out lower part dark areas as silicon base, intermediate light tone region is barium titanate film, and thickness is about 30nm.The barium titanate film
For nano thin-film.
Fig. 3 is the barium titanate nano ferroelectric thin film surface image under an atomic force microscope that the present embodiment obtains, can be with
Find out that surface is very smooth in addition to dirt.
Fig. 4 is that the present embodiment measures electricdomain and carries out barium titanate nano ferroelectric thin film table of the method to acquisition of electricdomain overturning
Face under piezoelectricity force microscope by bias change electricdomain direction image (specific detection method is referring to " Switching of
ferroelectric polarization in epitaxialBaTiO3 films on silicon without a
Conductingbottom electrode ", DOI:10.1038/NNANO.2013.192).Wherein first in 3 μm of * 3 μm of regions
Add+6V DC voltage sweep, then adds -6V DC voltage sweep in 1.5 μm of * 1.5 μm of regions, then carry out piezoelectricity force microscope and sweep
It retouches, as seen from Figure 5, DC voltage overturns film electricdomain, and film has good ferroelectricity.
Fig. 5 is that the present embodiment tests the barium titanate nano ferroelectric thin film of acquisition by the method for measuring ferroelectric hysteresis loop
Result (specific test method is referring to " Switching of ferroelectric polarization in
epitaxialBaTiO3Films on silicon without a conductingbottom electrode ", DOI:
10.1038/NNANO.2013.192).In Fig. 5, extremely 0.5 mm is powered on2Gold electrode, lower electrode be silicon, test frequency 10
KHz, voltage is followed successively by 1V, 2V, 3V, 4V, 5V, 6V, 7V, 8 V to curve respectively from inside to outside, further proves barium titanate nano
Film has good ferroelectricity.
Embodiment 2
It takes four inch silicon wafers to cut to 1 cm*1 cm size, and is respectively placed in acetone, isopropanol, carries out ultrasound in ethyl alcohol
(ultrasonic power 300W) each 15 min is cleaned, later with being dried with nitrogen.Silicon wafer after cleaning is placed in pulsed electron book deposit cavity
Interior is fixed it with substrate with elargol, carries out the growth of barium titanate nano ferroelectric thin film, except step 3) growth barium titanate is thin
Film, target temperature are 500 DEG C, and heating rate is 5 ~ 20 DEG C/min, remaining step is same as Example 1.
The barium titanate nano ferroelectric thin film that the present embodiment obtains is characterized and is tested:
Fig. 6 is the image of the barium titanate nano ferroelectric thin film surface of the present embodiment acquisition under a scanning electron microscope, can
To find out that film surface is relatively flat.
Fig. 7 is the barium titanate nano ferroelectric thin film surface image under an atomic force microscope that the present embodiment obtains, can be with
Find out that surface is more smooth in addition to dirt.
Fig. 8 is the ferroelectric hysteresis loop for the barium titanate nano ferroelectric thin film test that the present embodiment obtains, wherein powering on extremely 0.5
mm2Gold electrode, lower electrode be silicon, test frequency be 10 kHz, voltage is respectively 15 V to curve from inside to outside, illustrates this implementation
Very big electric leakage occurs for the barium titanate nano film of example preparation.
Embodiment 3
It takes four inch silicon wafers to cut to 1 cm*1 cm size, and is respectively placed in acetone, isopropanol, ethyl alcohol and carries out ultrasound clearly
(ultrasonic power 300W) each 15 min is washed, later with being dried with nitrogen.Silicon wafer after cleaning is placed in pulsed electron book deposition chambers
It is interior, it is fixed with substrate with elargol, carries out the growth of barium titanate nano ferroelectric thin film, except step 3) grows barium titanate film
In, set electron gun voltage as 10 KV, umber of pulse 13000, frequency 5Hz, remaining step is same as Example 1.
The barium titanate nano ferroelectric thin film that the present embodiment obtains is characterized and is tested:
Fig. 9 is the image of the barium titanate nano ferroelectric thin film surface of the present embodiment acquisition under a scanning electron microscope, can
To find out that film surface has apparent crystal grain, the flatness of film is influenced, so that ferroelectricity is uneven in film.
Figure 10 is the barium titanate nano ferroelectric thin film surface image under an atomic force microscope that the present embodiment obtains, can be with
Find out surface irregularity, roughness is higher, so that ferroelectricity is uneven in film, top electrode is made in device when applying it to
When, it will affect the contact of film and top electrode, to influence device performance.
Embodiment 4
It takes four inch silicon wafers to cut to 1 cm*1 cm size, and is respectively placed in acetone, isopropanol, ethyl alcohol and carries out ultrasound clearly
Each 15 min is washed, later with being dried with nitrogen.Silicon wafer after cleaning is placed in pulsed electron book deposition chamber, with elargol by its with
Substrate is fixed, carry out barium titanate nano ferroelectric thin film growth, preparation step 1) -3) it is same as Example 1, step 4) without
In-situ annealing, by step 3) deposit barium titanate film directly take out in air carry out 700 DEG C annealing (annealing refers to:
After the barium titanate film of deposition is taken out, 700 DEG C are warming up to 20 DEG C/min in air, keeps the temperature 1 hour), obtain barium titanate
Film.
The barium titanate film that the present embodiment obtains is characterized and is tested:
Figure 11 is the image of the barium titanate film surface of the present embodiment acquisition under a scanning electron microscope, it can be seen that thin
Film surface roughness is larger, influences the flatness of film, so that ferroelectricity is uneven in film.
Figure 12 is the image of the barium titanate film surface of the present embodiment acquisition under an atomic force microscope, it can be seen that surface
There is apparent big crystal grain, roughness is very big, rises and falls very big, so that ferroelectricity is uneven in film, when applying it in device
When, it will affect the contact of film and other components such as electrode, to influence device performance.
Figure 13 is the ferroelectric hysteresis loop for the barium titanate film test that the present embodiment obtains, wherein powering on extremely 0.5 mm2Gold
Electrode, lower electrode are silicon, and test frequency is 10 kHz, and voltage is respectively 5V and 9V to curve from inside to outside, it was demonstrated that the barium titanate is received
Rice film leaks electricity.
The target substrate that above embodiments use is monocrystalline silicon, and in the specific implementation process, target substrate can also use
The purpose of invention can be achieved in Sapphire Substrate, each metalloid (such as gold, copper, aluminium) material.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, several improvement can also be made without departing from the principle of the present invention, these improvement also should be regarded as of the invention
Protection scope.
Claims (4)
1. a kind of method for preparing barium titanate nano ferroelectric thin film based on pulsed electron beam deposition technology, includes the following steps:
1) target substrate is cleaned；
2) reaction chamber pollutant is cleared up:
Barium titanate target and target substrate are put into the reaction chamber of pulsed electron beam deposition system, molecule pump speed is 1000
Hz, reaction chamber are evacuated down to 1.0 × 10-6 Torr or following；
3) reaction chamber oxygen partial pressure is controlled:
Molecule pump speed is 250Hz, and being oxygenated to reaction chamber and maintaining pressure is 6 × 10-3 Torr；
4) barium titanate film is grown:
Target substrate carries out being warming up to 700 DEG C；
Electron gun voltage is set as 10 KV, umber of pulse 13000, frequency is 3 Hz, carries out barium titanate film deposition；
After electron gun end of run, stops logical oxygen and close molecular pump；
5) barium titanate film in-situ annealing:
After molecular pump completely closes, leading to oxygen to chamber pressure to reaction chamber is 100 Torr, keeps the temperature 1 hour in 700 DEG C,
Then cooled to room temperature, i.e. barium titanate nano ferroelectric thin film in acquisition target substrate, with a thickness of 30nm.
2. the method that barium titanate nano ferroelectric thin film is prepared based on pulsed electron beam deposition technology according to claim 1,
It is characterized in that, target substrate described in step 1) is one of monocrystalline silicon, sapphire, gold, copper or aluminium.
3. the method that barium titanate nano ferroelectric thin film is prepared based on pulsed electron beam deposition technology according to claim 2,
It is characterized in that, cleaning target substrate described in step 1) refers to: target substrate is sequentially placed into acetone, isopropanol and ethyl alcohol respectively
Ultrasonic cleaning 15 minutes completes the cleaning to target substrate with being dried with nitrogen after taking-up.
4. preparing the side of barium titanate nano ferroelectric thin film described in one of -3 based on pulsed electron beam deposition technology according to claim 1
Method, which is characterized in that in step 4), target substrate heating rate is 5 ~ 20 DEG C/min.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276438A (en) * | 1999-06-08 | 2000-12-13 | 中国科学院物理研究所 | Sb-doped strontium titanate film and its preparing process |
| CN1303959A (en) * | 1999-11-24 | 2001-07-18 | 中国科学院物理研究所 | Indium-doped barium-titanate material and its preparation method |
| CN101123282A (en) * | 2006-08-08 | 2008-02-13 | 上海广电电子股份有限公司 | Inorganic EL display insulation media and its making method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276438A (en) * | 1999-06-08 | 2000-12-13 | 中国科学院物理研究所 | Sb-doped strontium titanate film and its preparing process |
| CN1303959A (en) * | 1999-11-24 | 2001-07-18 | 中国科学院物理研究所 | Indium-doped barium-titanate material and its preparation method |
| CN101123282A (en) * | 2006-08-08 | 2008-02-13 | 上海广电电子股份有限公司 | Inorganic EL display insulation media and its making method |
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