CN1303952A - Method for growing single-orientation lead zirconate titanate film on silicon substrate - Google Patents
Method for growing single-orientation lead zirconate titanate film on silicon substrate Download PDFInfo
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- CN1303952A CN1303952A CN 00100116 CN00100116A CN1303952A CN 1303952 A CN1303952 A CN 1303952A CN 00100116 CN00100116 CN 00100116 CN 00100116 A CN00100116 A CN 00100116A CN 1303952 A CN1303952 A CN 1303952A
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- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 239000010703 silicon Substances 0.000 title claims abstract description 9
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 title 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 title 1
- 238000000151 deposition Methods 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 16
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 5
- 238000004549 pulsed laser deposition Methods 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 230000002000 scavenging effect Effects 0.000 claims description 4
- 208000037656 Respiratory Sounds Diseases 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 238000006213 oxygenation reaction Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 5
- 229910020684 PbZr Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
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Abstract
The present invention relates to the field of ferroelectric-semiconductor heterojunctions. The method uses ultra-thin silicon oxide as a buffer layer, and uses pulse laser deposition equipment to realize the oriented growth of the PZT film on the silicon substrate by controlling the factors such as the thickness, the laser deposition parameters, the deposition temperature and the like. The method has simple and reliable process and good sample repeatability, and the obtained oriented growth PZT film has good ferroelectric property, can be used for ferroelectric-semiconductor integrated devices, is convenient for the research of ferroelectric-semiconductor heterojunction, provides convenience for the mass production of the devices, and provides convenience for further depositing other oxide films with similar lattice structures.
Description
The present invention relates to ferroelectric-heterojunction semiconductor field.
In recent years, very active to the research of becoming basic ferro-electric device with ferroelectric-heterogeneous semiconductor in the world.But a lot of research work still concentrates on the preparation of heterojunction sample and this step of raising of performance.The performance of device and stability, technology repeatable and all remain further to be improved with the compatibility of existing technology.The most frequently used semiconductor material Si and the ferroelectrics especially ferroelectric interface problem of perovskite structure fail to solve well all the time.Therefore, the preparation of ferroelectric-heterojunction semiconductor and rerum natura research are moved towards practicability to this device and have important role.
Growing oxide film has certain difficulty on the Si substrate.Because sull need deposit in oxygen atmosphere mostly, and Si is easy to oxidation, if do not control, the low-quality silicon oxide layer of generation can influence depositing of thin film.On the other hand, Si may take oxygen by force with film in deposition process even after deposition, cause the sull anoxic, and anoxic has the performance of a lot of oxide compounds and extremely seriously influences, may quench as high-temperature superconductor film, and ferroelectric thin film may lose ferroelectricity.
PbZr
xTi
1-xO
3(PZT) be the ferroelectric material of the excellent performance of perovskite structure.Especially can be the candidate material preferably in the present integrated ferroelectric device by the performance perameter of doping control material.In the integrated technique of PZT and Si, except above problem, also has a more serious problem, that is: mutual diffusion mutually that Pb and Si are serious and the very difficult (document 1 of growth that reacts to each other and make pzt thin film that just takes place at a lower temperature, Y.Shichi et al., Jpn.J.Appl.Phys., 33, (1994) 5172).
The direct method that addresses this problem be exactly between PZT and substrate growth one deck buffer insulation layer to stop diffusion.Eisuke Tokumitsu etc. once reported and used SrTiO
3As buffer layer, (Sr can be from SiO but also need the very thin Sr of pre-deposition one deck
2In take oxygen by force and form SrO), SrF
2Or CaF
2Make SrTiO
3And the buffer layer between the Si, device architecture is complicated (document 2, E.Tokumtsu et al., Jpn.J.Appl.Phys.34, (1995) 5202) quite.YSZ (document 3, S.Horita et al., Appl.Surf.Sci., 117, (1997) 429), CeO
2(document 4, B.E.Park et al., Appl.Surf.Sci., 117, (1997) 423), MgO (document 5, J.Senzaki et al., Jpn.J.Appl.Phys.35, (1996) 4195; Document 6, W.C.Shih et al., Jpn.J.Appl.Phys.36, (1997) 203) etc. material all once be in the news as buffer layer, same owing to required oxygen atmosphere in the deposition process of these oxide materials, in fact all there is the very thin SiO of one deck between Si and these films
2-x, remain a kind of structure of multi-buffering-layer.And using these materials to do in the device of buffer layer, discovery exists highdensity defective and current carrier trap at the interface buffer layer and Si's, so band curvature that produces and bigger absorption current, can seriously influence the performance (document 3 of device, S.Horita et al., Appl.Surf.Sci., 117, (1997) 429).
In order to address the above problem, can consider to use SiO
2Make buffer layer, SiO
2-Si interface can be controlled well by existing mature semiconductor technology.Yet, because the SiO that thermooxidizing generates
2Film is normally unbodied, at unformed SiO
2The pzt thin film of the single orientation of last growth has certain degree of difficulty.And the SiO at 400 dusts of people such as Yu report
2The PZT of last growth shows random orientation (document 7, J.Yu et al., Appl.Phys.Lett.70, (1997) 490).
The objective of the invention is to improve prior art, use ultra-thin silicon oxide to make buffer layer, control by factors such as thickness, laser deposition parameter and depositing temperature, realize the oriented growth of pzt thin film on silicon substrate with pulsed laser deposition equipment to buffer layer.Simple and reliable process of the present invention, the sample good reproducibility, the epitaxial pzt thin film of acquisition has the good ferroelectric performance, can be used for ferroelectric-semiconductor integrated device, also is convenient to carry out simultaneously the research of ferroelectric-heterojunction semiconductor.The object of the present invention is achieved like this:
The present invention utilizes the singularity of ultra-thin silicon oxide structure, makes buffer layer suppressing Pb, Si mutual diffusion with it, and the regulation and control by to factors such as the thickness of silicon oxide buffer layer and depositing temperatures make pzt thin film at silicon substrate upper edge c oriented growth.Introduce the scope of above each factor below respectively to the influence and the regulation and control thereof of pzt thin film structure and orientation.
Depositing temperature has determined the structure and the performance of pzt thin film.Depositing temperature is low excessively, and amorphous phase, Jiao Lvshi phase and other dephasigns can appear in film; Depositing temperature is too high, because lead at high temperature is easy to volatilization, can influence the ferroelectric properties of film.When depositing temperature is 700～750 ℃, obtain the good pzt thin film of ferroelectric properties of monophasic perovskite structure easily.The thickness of buffer layer has determined the growing state and the orientation of pzt thin film.Buffer layer is thin excessively, then can't suppress the mutual diffusion of plumbous and silicon, is difficult to obtain pzt thin film; When buffer layer was blocked up, because the non-crystal structure of thick silicon oxide, PZT can not realize single-orientated.When the thickness of silicon oxide buffer layer is 40～100 dusts,, make silicon oxide surface form the quite orderly sequence network that has, be easy to realize the single c oriented growth of pzt thin film owing to contain many crystallites zone in the ultra-thin silicon oxide.
The present invention must be in order to down equipment and material:
Ultrasonic cleaning instrument (index has not a particular requirement)
Pulsed laser source: the KrF laser apparatus of the LPX 300cc type that Lambda Physik company produces, optical maser wavelength is 248nm, pulse width is 25ns.
Vacuum coating film equipment: final vacuum is 5.0 * 10
-4Pa
1000 ℃ of chip bench maximum heating temperatures
Target spacing 4.0～4.7cm
The supporting vacuum pump of vacuum coating film equipment:
First step vacuum pump: mechanical pump-pumping speed is 8L/s
Ultimate pressure is 6 * 10
-2Pa
Second stage vacuum pump: molecular pump-pumping speed is 600L/s
Ultimate pressure is 1 * 10
-8Pa
The supporting temperature controller of vacuum coating film equipment: the SR50 type single loop process setter of day island proper electricity company production
Material requirements: analytical pure trieline, analytical pure alcohol, analytical pure acetone, analytical pure hydrochloric acid, analytical pure ammoniacal liquor, analytical pure hydrofluoric acid, analytical pure hydrogen peroxide, deionized water, the Si substrate of (100) orientation, high purity oxygen, PbZr
xTi
(1-x)O
3Target (x≤0.53).
The present invention realizes by following steps:
(1) clean substrate:
The Si substrate that in the ultrasonic cleaning instrument (100) that cut is orientated with analytical pure trieline, analytical pure acetone, analytical pure alcohol carries out the ultrasonic cleaning more than 5 minutes respectively, to remove greasy dirt and other organic impurity on surface, in stink cupboard successively be then: HCl: H at volume proportion
2O
2: H
2O=1: 1: 5 and NH
3H
2O: H
2O
2: H
2O=1: boil 5～10 minutes in 1: 5 the scavenging solution to remove ionic impurity.More than cleaning should make substrate surface not have observable pollutent (range estimation gets final product), otherwise should repeat said process.In stink cupboard be at last: HF: H with volume ratio
2O=1: 9 analytical pure hydrofluoric acid corrosive fluid is removed surface oxide layer.
(2) preparation silicon oxide buffer layer
To dry up on the chip bench that is placed on coating chamber through the Si substrate that step (1) was cleaned, coating chamber will be evacuated to P＜2 * 10
-3Pa rises to 900～930 ℃ with the speed that is lower than 2000 ℃/hour with substrate temperature, in baking under this temperature more than 15 minutes.Then at 820～850 ℃, in the high purity oxygen gas atmosphere of 1～1.2atm, prepare SiO with the method for the dry-oxygen oxidation in the thermooxidizing
2Buffer layer.Ultra-thin Si O
2Thickness be controlled to be 40～100 dusts by oxidization time (1～30 minute).The silicon oxide that generates may contain a spot of anoxybiotic SiO
2-xComposition.
The silicon oxide buffer layer can also prepare with methods such as synthetic HCl oxidation of hydrogen-oxygen or sputters, but must guarantee the compactness of silicon oxide and the condition that thickness is easy to control.
(3) preparation pzt thin film
After oxidation finishes, cool the temperature to the depositing temperature (700～750 ℃) of PZT, prepare pzt thin film with pulsed laser deposition.The parameter that need regulate during deposit film comprises: the distance of laser energy density, laser pulse frequency, target and substrate, deposition pressure, depositing temperature etc.Need charge into certain high purity oxygen before the deposition, and use micrometering valve to make it that certain flow velocity be arranged, regulate oxygenation speed to guarantee to have the deposition atmosphere of stable air pressure.Test-results shows that following parameter area is comparatively suitable:
Laser energy: 300～650mJ/ pulse,
Pulse-repetition: 1～10Hz,
Laser energy density: 1.2～2.5J/cm
2,
Target is to substrate distance: 4.5～5cm,
Deposition pressure: 40Pa～50Pa
Deposition finishes, depositing temperature (700～750 ℃) insulation 10～20 minutes, (rate of temperature fall is relevant with thickness near cooling the temperature to the Curie temperature of PZT as early as possible,, crackle is not as the criterion with film) because of appearring in thermal mismatching, slowly pass through Curie temperature with 60～100 ℃/hour rate of temperature fall, the stress that produces during with the release phase transformation.Reduce to room temperature with stove then.
Measurement through X-ray diffraction and ferroelectric hysteresis loop shows: the PZT of gained is single c orientation (see figure 1), and has the good ferroelectric (see figure 2).
The film performance that the present invention has avoided the inferior quality oxidation because of Si surface in the deposition process to cause reduces and structure complicated, has guaranteed the buffer structure and the interface performance of individual layer.SiO
2Growth compatible mutually with the silicon technology that uses now, provide convenience for device move towards production in enormous quantities.Pzt thin film good ferroelectric performance and single c-oriented growth can satisfy the application requiring of devices such as ferroelectric condenser and ferroelectric field effect pipe, and the PZT of c-orientation causes polarization performance better under the same thickness.Ultra-thin buffer layer can reduce device power consumption, is suitable for the thin grid metal-ferroelectrics-isolator-semiconductor field effect transistor of reduce power consumption, high-field effect.The present invention also is suitable for the preparation of perovskite structure oxide-ferroelectrics-isolator-semiconductor multi layer film.The pzt thin film of single c-orientation provides convenience for further depositing other sulls with similar crystalline network, as preparation YBCO/PZT/SiO
2/ Si (100) multilayer film.
The present invention will be further described below in conjunction with drawings and Examples:
Fig. 1: PZT/SiO
2The X-ray diffractogram of/Si (100), illustration are the rocking curve of PZT (200)
Fig. 2: to PZT/SiO
2The ferroelectric hysteresis loop that the pzt thin film of/Si (100) structure records
Embodiment 1
(1) clean substrate:
The Si substrate that cuts is carried out 10 minutes ultrasonic cleaning to remove greasy dirt and other organic impurity on surface with trieline, acetone, alcohol respectively, in stink cupboard successively be then: HCl: H at volume proportion
2O
2: H
2O=1: 1: 5 and NH
3H
2O: H
2O
2: H
2O=1: boil 10 minutes in 1: 5 the scavenging solution to remove ionic impurity.In stink cupboard be at last: HF: H with volume ratio
2O=1: 9 hydrofluoric acid corrosive fluid is removed surface oxide layer.
(2) preparation silicon oxide buffer layer
To dry up on the chip bench that is placed on coating chamber through the Si substrate that step (1) was cleaned, coating chamber will be evacuated to P＜2 * 10
-3Pa rose to 900 ℃ with 1500 ℃/hour speed with substrate temperature, this temperature baking 20 minutes.Then at 820 ℃, in the high purity oxygen gas atmosphere of 1.2atm, oxidation 1 minute, the silicon oxide thickness of generation is 40 dusts.
(3) preparation pzt thin film
With 700 ℃ be depositing temperature, adopting energy is the 550mJ/ pulse, frequency is the pulsed laser deposition PbZr of 5Hz
0.53Ti
0.47O
3, depositing time is 5 minutes, and PZT thickness is 1000 dusts, and sputter finishes the back depositing temperature insulation 10 minutes, reduces to 400 ℃ with 1500 ℃/hour rate of temperature fall, reduces to 370 ℃ with 60 ℃/hour speed, reduces to room temperature with stove at last.The pzt thin film that makes is single c orientation, and it is 0.42 ° that rocking curve records halfwidth, and ferroelectric properties is good, and saturated polarization reaches 18 μ C/cm
2, residual polarization is 8 μ C/cm
2, coercive field is 75kV/cm.
Embodiment 2
(1) clean substrate:
The Si substrate that cuts is carried out 5 minutes ultrasonic cleaning to remove greasy dirt and other organic impurity on surface with trieline, acetone, alcohol respectively, in stink cupboard successively be then: HCl: H at volume proportion
2O
2: H
2O=1: 1: 5 and NH
3H
2O: H
2O
2: H
2O=1: boil 5 minutes in 1: 5 the scavenging solution to remove ionic impurity.In stink cupboard be at last: HF: H with volume ratio
2O=1: 9 hydrofluoric acid corrosive fluid is removed surface oxide layer.
(2) preparation silicon oxide buffer layer
To dry up on the chip bench that is placed on coating chamber through the Si substrate that step (1) was cleaned, coating chamber will be evacuated to P＜2 * 10
-3Pa rose to 930 ℃ with 1500 ℃/hour speed with substrate temperature, this temperature baking 20 minutes.Then at 850 ℃, in the high purity oxygen gas atmosphere of 1atm, oxidation 30 minutes, the silicon oxide thickness of generation is 100 dusts.
(3) preparation pzt thin film
With 750 ℃ be depositing temperature, adopting energy is the 550mJ/ pulse, frequency is the pulsed laser deposition PbZr of 5Hz
0.53Ti
0.47O
3, depositing time is 5 minutes, and PZT thickness is 1000 dusts, and sputter finishes the back depositing temperature insulation 20 minutes, reduces to 400 ℃ with 1200 ℃/hour rate of temperature fall, reduces to 370 ℃ with 100 ℃/hour speed, reduces to room temperature with stove at last.The pzt thin film that makes is single c orientation, and it is 0.44 ° that rocking curve records halfwidth, and ferroelectric properties is good, and saturated polarization reaches 26 μ C/cm
2, residual polarization is 10 μ C/cm
2, coercive field is 70kV/cm.
Claims (2)
1, a kind of on silicon substrate the method for growing single-orientated PZT thin film, it is characterized in that: may further comprise the steps:
(1) clean substrate:
The Si substrate that in the ultrasonic cleaning instrument (100) that cut is orientated with analytical pure trieline, analytical pure acetone, analytical pure alcohol carries out the ultrasonic cleaning more than 5 minutes respectively, in stink cupboard successively at volume proportion is then: HCl: H
2O
2: H
2O=1: 1: 5 and NH
3H
2O: H
2O
2: H
2O=1: boiled in 1: 5 the scavenging solution 5～10 minutes, more than cleaning does not have observable pollutent with the range estimation substrate surface and gets final product, otherwise should repeat said process, in stink cupboard with volume ratio is at last: HF: H
2O=1: 9 analytical pure hydrofluoric acid corrosive fluid is removed surface oxide layer;
(2) preparation silicon oxide buffer layer:
To dry up on the chip bench that is placed on coating chamber through the Si substrate that step (1) was cleaned, coating chamber will be evacuated to P＜2 * 10
-3Pa rises to 900～930 ℃ with the speed that is lower than 2000 ℃/hour with substrate temperature, in baking under this temperature more than 15 minutes, then at 820～850 ℃, in the high purity oxygen gas atmosphere of 1～1.2atm, prepares SiO with the method for the dry-oxygen oxidation in the thermooxidizing
2Buffer layer, oxidization time are 1～30 minute;
(3) preparation pzt thin film:
After oxidation finishes, cool the temperature to 700～750 ℃ of the depositing temperatures of PZT, prepare pzt thin film with pulsed laser deposition, each parameter is respectively: laser energy: 300～650mJ/ pulse, pulse-repetition: 1～10Hz, laser energy density: 1.2～2.5J/cm
2Target is to substrate distance: 4.5～5cm, deposition pressure: 40Pa～50Pa, charge into certain high purity oxygen before the deposition, and use micrometering valve to make it that certain flow velocity be arranged, regulate oxygenation speed to guarantee to have the deposition atmosphere of stable air pressure, after deposition finishes, be incubated 10～20 minutes down for 700～750 ℃ at depositing temperature, cool the temperature to as early as possible near the Curie temperature of PZT, rate of temperature fall is not as the criterion because of crackle appears in thermal mismatching with film, slowly by Curie temperature, reduces to room temperature with stove with 60～100 ℃/hour rate of temperature fall then.
2, by claim 1 described on silicon substrate the method for growing single-orientated PZT thin film, its feature also is: its silicon oxide buffer layer can also prepare with synthetic HCl oxidation of hydrogen-oxygen or sputtering method, but will guarantee the compactness of silicon oxide and the condition that thickness is easy to control.
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|---|---|---|---|
| CN 00100116 CN1120897C (en) | 2000-01-11 | 2000-01-11 | Method for growing single-orientation lead zirconate titanate film on silicon substrate |
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|---|---|---|---|
| CN 00100116 CN1120897C (en) | 2000-01-11 | 2000-01-11 | Method for growing single-orientation lead zirconate titanate film on silicon substrate |
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|---|---|---|---|---|
| CN100348771C (en) * | 2005-07-13 | 2007-11-14 | 四川大学 | Method for preparing lead based ferroelectric film |
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|---|---|---|---|---|
| CN100348771C (en) * | 2005-07-13 | 2007-11-14 | 四川大学 | Method for preparing lead based ferroelectric film |
| CN100552551C (en) * | 2006-08-29 | 2009-10-21 | 中国科学院声学研究所 | A kind of strip preparation method of graphics ferroelectric lead zirconate titanate film |
| CN101262040B (en) * | 2008-04-24 | 2010-06-16 | 湘潭大学 | Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method |
| CN102343326A (en) * | 2010-07-30 | 2012-02-08 | 株式会社理光 | Thin film manufacturing method and thin-film element |
| CN105088160A (en) * | 2015-08-25 | 2015-11-25 | 中国科学院上海硅酸盐研究所 | Method for preparing SrRuO3 thin film with high (110) preferred orientation |
| CN106058039B (en) * | 2016-07-15 | 2018-12-21 | 中国科学院金属研究所 | A kind of lead zirconate titanate/ruthenic acid strontium ferroelectric superlattice material and preparation method thereof |
| CN106058039A (en) * | 2016-07-15 | 2016-10-26 | 中国科学院金属研究所 | Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof |
| CN106756808A (en) * | 2016-11-29 | 2017-05-31 | 深圳倍声声学技术有限公司 | A kind of method for improving dynamic iron part corrosion resistance |
| CN106756808B (en) * | 2016-11-29 | 2019-04-02 | 深圳倍声声学技术有限公司 | A method of improving dynamic iron component corrosion resistance |
| CN107482114A (en) * | 2017-08-03 | 2017-12-15 | 大连理工大学 | A kind of diffusion interlinked methods of PZT/Si |
| CN107482114B (en) * | 2017-08-03 | 2019-08-09 | 大连理工大学 | A kind of diffusion interlinked method of PZT/Si |
| CN108018523A (en) * | 2017-11-30 | 2018-05-11 | 哈尔滨工业大学深圳研究生院 | One kind uses pulsed laser deposition technique growth lead zirconate titanate（PZT）The method of nano-rings |
| CN108517503A (en) * | 2018-05-22 | 2018-09-11 | 苏州大学 | A kind of preparation method of PZT thin film |
| CN116083848A (en) * | 2022-09-30 | 2023-05-09 | 西安电子科技大学 | Double-layer film material, preparation method thereof and ferroelectric memory |
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