CN106980189B - Graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide - Google Patents
Graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide Download PDFInfo
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- CN106980189B CN106980189B CN201710409117.9A CN201710409117A CN106980189B CN 106980189 B CN106980189 B CN 106980189B CN 201710409117 A CN201710409117 A CN 201710409117A CN 106980189 B CN106980189 B CN 106980189B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
Abstract
The invention discloses a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, solve the larger RC constant for being limited to lump electrode structure based on graphene optical modulator in the prior art, the problem that modulation bandwidth is smaller is caused, photoelectron technical field is belonged to.The present invention includes substrate layer, and strip optical waveguide and dielectric fill layer in substrate layer surface is arranged in, and the microstrip line travelling wave electric pole structure in strip optical waveguide is arranged in.The present invention is for realizing light modulation rate.
Description
Technical field
A kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, for realizing light modulation speed
Rate belongs to photoelectron technical field.
Background technique
With the arrival of big data era, data communication service is in explosive growth, this allows for people to the need of bandwidth
It asks higher and higher, also just determines that optical transmission system develops to ultrahigh speed, large capacity, integrated direction.Optical modulator and light
Switch is the core devices in optical communication network, is played an important role to the building of optical communication network.Currently, being based on various machines
The optical modulator of system has all successively been developed and has prepared, the modulator of commercialization at present be mainly based upon niobic acid lithium material and
The optical modulator of InP-base.Recent years, the optical modulator based on Si base are also prepared out, although itself and traditional CMOS work
Skill is compatible, but is limited by its material itself, along with current optical modulator mostly uses greatly lump electrode structure, modulation bandwidth
It is limited by RC constant, it is still a problem that the bandwidth of optical modulator, which breaks through 50GHz,.
The absorption region of grapheme material ultra-wide spectrum, the carrier mobility of superelevation, optical characteristics can be artificial
Regulation, and its technique is compatible with traditional cmos process, it is considered to be and the replacer of the following Si material is production optical modulator
Ideal material is (see document Kinam Kim, et al.A role for graphene in silicon-based
semiconductor devices.Nature,2011,Vol 479,p338-344).Currently, the optics based on grapheme material
Modulator is widely studied, but the light modulation rate realized is less desirable, maximum tune reported in the literature at present
Bandwidth processed is in 35GHz or so (see document H.Dalir, et al.Athermal Broadband Graphene Optical
Modulator with 35GHzSpeed, ACS Photonics 3,2016), it is realized no more than traditional Si base optical modulator
Modulation bandwidth.This is primarily limited to the larger RC constant limitation of lump electrode structure.And grapheme material has the load of superelevation
Transport factor is flowed, intrinsic bandwidth of operation is up to 500GHz.
Summary of the invention
It is an object of the invention to: solution is limited to lump electrode structure based on graphene optical modulator in the prior art
Larger RC constant, causes the problem that modulation bandwidth is smaller, provides a kind of graphene microstrip line row based on strip optical waveguide
Wave absorption-type optical modulator.
The technical solution adopted by the invention is as follows:
A kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, which is characterized in that including lining
Bottom is arranged in strip optical waveguide and dielectric fill layer in substrate layer surface, the microstrip line in strip optical waveguide is arranged in
Travelling wave electric pole structure；Microstrip line travelling wave electric pole structure includes the first graphene set gradually in strip optical waveguide from top to bottom
Strip optical waveguide, the first graphene microstrip line and the second graphene microstrip line is isolated in microstrip line and the second graphene microstrip line
Dielectric isolation layer, the first electrode and second electrode of the upper connection of the first graphene microstrip line, respectively in first electrode and
The two sides of two electrodes, the first grounding electrode connected on the second graphene microstrip line, the second grounding electrode, third grounding electrode and
4th grounding electrode.
Further, the surface of substrate layer is divided into two parts by the strip optical waveguide；The dielectric fill layer includes quilt
The first dielectric fill layer and the second dielectric fill layer of strip optical waveguide isolation；The material of the substrate layer is titanium dioxide
Silicon.
Further, the strip optical waveguide is isolated with the first graphene microstrip line by the first dielectric isolation layer, the first stone
Black alkene microstrip line is isolated with the second graphene microstrip line by the second dielectric isolation layer, first dielectric isolation layer,
The material of two dielectric isolation layers is one or a combination set of silicon nitride, aluminum oxide, boron nitride material body.
Further, the strip optical waveguide is one of silicon, silicon nitride material.
Further, the material of first dielectric fill layer and the second dielectric fill layer is Si oxide, silicon nitrogen oxygen
One or a combination set of compound, boron nitride or hydrogen silsesquioxane material body.
Further, second dielectric isolation layer with a thickness of 5nm~120nm.
Further, the first electrode, second electrode, the first grounding electrode, the second grounding electrode, third grounding electrode,
The material of 4th grounding electrode is one or a combination set of gold, silver, copper, platinum, titanium, nickel, cobalt, palladium body.
Further, the first graphene microstrip line prolongs to the first dielectric fill layer and the second dielectric fill layer side
It stretches, both ends are connected with first electrode and second electrode respectively after extending the second dielectric isolation layer, first electrode and second
Access electrode of the electrode as microwave signal in electrode, extraction electrode of another electrode as microwave signal；Along first
The extending direction of graphene microstrip line, the second graphene microstrip line each extend over out the first ground connection of the second dielectric isolation layer connection
Electrode, the second grounding electrode, third grounding electrode and the 4th grounding electrode, first grounding electrode, the second grounding electrode,
Three grounding electrodes, the 4th grounding electrode are used as grounding electrode.
Further, first grounding electrode, the second grounding electrode collectively form GSG electrode in the two sides of first electrode
Structure；Third grounding electrode, the 4th grounding electrode collectively form GSG electrode structure in the two sides of second electrode.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1, present invention employs microstrip line travelling wave electric pole structure, the modulation bandwidth of optical modulator will be not only restricted to RC constant,
Modulation bandwidth can be greatly improved, and is prepared relatively simple based on strip optical waveguide；
2, optical modulator waveguide of the present invention can be based on SOI wafer, can be with traditional SOI CMOS technology in preparation process
It is mutually compatible, it is easily integrated, and compared with traditional traveling-wave structure optical modulator, light modulator structure of the present invention is not necessarily to stringent phase velocity
Matching, can be realized the modulation bandwidth of ultra-wide, be expected to break through 200GHz.
3, traveling wave light modulator of the present invention can by design specific graphene-metal contact surface length and width and
Dielectric substance and thickness between two layers of graphene transmission line, to design the impedance value size of entire optical modulator, thus real
The impedance matching of existing wave transmission line improves modulation efficiency.
4, the access of optical modulator of the present invention and extraction electrode have been all made of GSG structure electrode, visit with existing GSG microwave
Needle test interface is compatible, convenient test.
Detailed description of the invention
Fig. 1 is a kind of three-dimensional knot of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide of the present invention
Structure schematic diagram.
Fig. 2 is a kind of graphene microstrip line traveling wave absorption-type optical modulator neutral body knot based on strip optical waveguide of the present invention
The supplementary explanation figure of structure schematic diagram is the supplementary explanation figure of the first graphene microstrip line construction.
Fig. 3 is that a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide of the present invention is having first
The waveguide cross-section structural schematic diagram of strip optical waveguide at graphene microstrip line, the second graphene microstrip line covering；
Fig. 4 is the equivalent circuit diagram of graphene microstrip line traveling wave electrode in the present invention；
Fig. 5 is the effective refractive index imaginary part of TE mould in strip optical waveguide in the present invention with the variation of graphene chemical potential energy
Figure；
Fig. 6 be the present invention respectively under " On " and " Off " state difference graphene length as modulation areas when normalizing
Change output power curve figure.
In figure, 1- substrate layer, 2- strip optical waveguide, the first dielectric fill layer of 31-, the second dielectric fill layer of 32-,
The first dielectric isolation layer of 41-, the second dielectric isolation layer of 42-, 5- the first graphene microstrip line, 6- the second graphene micro-strip
Line, 71- first electrode, 72- second electrode, the first grounding electrode of 81-, the second grounding electrode of 82-, 83- third grounding electrode,
The 4th grounding electrode of 84-.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
A kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, as shown in Figure 1, Figure 2 and Fig. 3 institute
Show, including the strip optical waveguide 2 being arranged on silicon dioxide liner bottom 1；The surface of substrate layer 1 is divided into two by strip optical waveguide 2
Part, the two sides of strip optical waveguide 2 are provided with the first dielectric fill layer 31 and the second dielectric on silicon dioxide liner bottom 1
Filled layer 32；It is disposed with the first graphene microstrip line 5 and the second graphene from top to bottom in the upper surface of strip optical waveguide 2
Microstrip line 6, strip optical waveguide 2 is isolated with the first graphene microstrip line 5 by the first dielectric isolation layer 41, the first graphene micro-strip
Line 5 is isolated with the second graphene microstrip line 6 by the second dielectric isolation layer 42；The both ends of first graphene microstrip line 5 are to first
Dielectric fill layer 31 and 32 side of the second dielectric fill layer extend, and both ends are distinguished after extending the second dielectric isolation layer 42
Be connected with first electrode 71 and second electrode 72, as microwave modulated signal access and pick out electrode；Second graphene is micro-
It extends out respectively in the two sides of first electrode 71 and second electrode 72 with line 6 and connects the first grounding electrode 81, second ground connection electricity
Pole 82 and third grounding electrode 83, the 4th grounding electrode 84 constitute GSG electrode structure with first electrode and second electrode respectively.
The strip optical waveguide 2 is one of silicon, silicon nitride material.
First dielectric isolation layer 41, the second dielectric isolation layer 42 material be silicon nitride, aluminum oxide, nitrogen
Change one or a combination set of boron material body.
The material of first dielectric fill layer 31 and the second dielectric fill layer 32 is Si oxide, silicon nitrogen oxidation
One or a combination set of object, boron nitride or HSQ material body.
Second dielectric isolation layer 42 with a thickness of 5nm~120nm.
The first electrode 71, second electrode 72, the first grounding electrode 81, the second grounding electrode 82, third grounding electrode
83, the material of the 4th grounding electrode 84 is one or a combination set of gold, silver, copper, platinum, titanium, nickel, cobalt, palladium body.
Access electrode of the electrode as microwave signal, another electrode in the first electrode 71, second electrode 72
Extraction electrode as microwave signal；First grounding electrode 81, the second grounding electrode 82, third grounding electrode the 83, the 4th
Grounding electrode 84 is used as grounding electrode；First grounding electrode 81, the second grounding electrode 82 in the two sides of first electrode 71,
Collectively form GSG electrode structure；Third grounding electrode 83, the 4th grounding electrode 84 are collectively formed in the two sides of second electrode 72
GSG electrode structure；Two GSG electrode structures and the first graphene microstrip line 5, the second graphene microstrip line 6 and dielectric isolation
Layer collectively forms microstrip line travelling wave electric pole structure；Two GSG electrode structures are compatible with existing GSG microwave probe test interface.
Optical modulator working principle of the invention are as follows: when device works, bias voltage is loaded by GSG microwave probe
On GSG electrode, by changing voltage, the complex dielectric permittivity of dynamic tuning graphene, to influence suction of the strip optical waveguide to light
It receives.Effective refractive index real part corresponds to the phase change of optical signal, and its imaginary part corresponds to the decaying of optical signal.First graphene
Microstrip line 5 exists not only as the transmission line of microwave signal, but also as the absorption controlled material of optical signal when applying bias voltage works
When some point, so that graphene-strip optical waveguide (the first graphene microstrip line 5, the second graphene microstrip line 6 and strip light
Waveguide 2) there is stronger absorption to optical signal, strip optical waveguide is exported almost without optical signal, as " Off State "；And change
Become applying bias voltage work in another point, so that graphene-strip optical waveguide is very small to optical signal absorption, light letter
Number from strip optical waveguide export, as " On State ".Thus, the optical characteristics by regulating and controlling graphene, which can be realized, believes light
Number modulation function.Due to using travelling wave electric pole structure, modulation bandwidth is no longer limited by the limitation of RC constant, modulates band
Width can be estimated by following formula:
Wherein c is the ray velocity in vacuum, and L is effective modulation areas length of modulation areas, nmFor having for microwave signal
Imitate refractive index, n0For the effective refractive index of light wave in the waveguide.Graphene and optical signal have stronger interaction, thus only need
Stronger light absorption can be realized in graphene length L that will be shorter, i.e., matches without stringent phase velocity, i.e., | nm-n0| without very
The modulation bandwidth of ultra-wide can be realized in small value.
Further illustrate technical solution of the present invention combined with specific embodiments below: the present embodiment one kind is based on strip-shaped convection
The structural schematic diagram of the graphene microstrip line traveling wave absorption-type optical modulator led as shown in Figure 1, Figure 2 and Figure 3.Use wavelength for
1.55 μm of light wave is accessed from any one port of strip optical waveguide 2, and the height and width of strip optical waveguide 2 are respectively 220nm
And 500nm, it is Si material；First dielectric fill layer 31, the second dielectric fill layer 32 are HSQ material；First dielectric
Separation layer 41, the second dielectric isolation layer 42 are respectively the hBN material of 5nm, 20nm thickness；First graphene microstrip line 5, the second stone
The material of black alkene microstrip line 6 is single-layer graphene, and specific micro-strip line pattern can be defined by electron beam lithography, then by oxygen etc.
Gas ions etch away the graphene of redundance to obtain；First electrode 71, second electrode 72, the first grounding electrode 81,
The material of two grounding electrodes 82, third grounding electrode 83 and the 4th grounding electrode 84 is the plated with gold conduct contact in palladium metal
Electrode；The both ends of first graphene microstrip line 5 each extend over out connection first electrode 71 and second electrode 72, as microwave tune
The access electrode and extraction electrode of signal processed；One end of second graphene microstrip line 6 has in 61 left and right sides of first electrode prolongs
The first grounding electrode 81 of connection and the second grounding electrode 82 are stretched, constitutes GSG electricity as grounding electrode, and with first electrode 71
Pole structure；The other end of second graphene microstrip line 6 extends out in the left and right sides of second electrode 72 and connects third and connect
Ground electrode 83 and the 4th grounding electrode 84 constitute GSG electrode structure as grounding electrode, and with second electrode 72.
Fig. 4 is the equivalent circuit diagram of graphene microstrip line traveling wave electrode of the embodiment of the present invention.Graphene and metal electrode it
Between have an ohmic contact resistance Rc, the width of the first graphene microstrip line 5 is 5 μm, the first graphene microstrip line 5 and the second graphene
The second dielectric layer 92 between microstrip line 6 with a thickness of 20nm, according to microstrip line traveling wave line model, the first graphene is micro-
The traveling wave line characteristic impedance Z constituted with line 5 and the second graphene microstrip line 603 Ω of ≈, and the total impedance of entire modulator
Value is constituted together with ohmic contact resistance and traveling wave line characteristic impedance by graphene between metal electrode, to reach
Impedance matching reduces microwave reflection, and the total impedance value of entire modulator should be close to 50 Ω.Between graphene and metal electrode
Ohmic contact resistance Rc value size is closely related with the well contact of graphene and metal, and has graphene-metal contact
Face is wider, and ohmic contact resistance Rc value is smaller, can be by formula Rc=Rg-m/ W estimation, wherein Rg-mIt is connecing for graphene and metal
Electric shock resistance, value size generally change in 100~3000 Ω μ ms, and related with the quality of grapheme material, W is graphite
Alkene-metal interface width, thus we can be designed by the width of the contact surface of the reasonable graphene-metal of design
The size of reasonable Rc value, Lai Shixian impedance matching improve modulation efficiency.
Fig. 5 is the effective refractive index of TE mould of the embodiment of the present invention with the variation diagram of graphene chemical potential energy.The present embodiment
Waveguiding structure only supports TE basic mode to transmit, when graphene chemical potential energy is in 0~0.4eV, TE Effective index imaginary values ratio
Larger, in graphene chemical potential energy in 0.5~1eV, TE Effective index imaginary values are smaller, choose graphite alkylene respectively
It learns potential energy and is used as " Off " and " On " state in 0eV and 0.7eV, optical signal passes through the normalized output power when optical modulator
Change curve is as shown in Figure 6.When the graphene overlay length for being covered on strip optical waveguide is 200 μm, which can
Realize the extinction ratio of 22.2dB, and insertion loss only has 0.72dB.
From formula (1) it is found that working as L=250 μm, even if the effective refractive index difference between microwave and light wave is 2, the light modulation
The 3dB modulation bandwidth of device may be up to 267.2GHz.And the effective refractive index difference between microwave and light wave can be according to insulating layer material
The selection of material and further reduce, realize microwave signal and lightwave signal speeds match, it is possible to realize higher modulation
Bandwidth.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (8)
1. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, which is characterized in that including substrate
Layer (1), the strip optical waveguide (2) and dielectric fill layer being arranged on substrate layer (1) surface are arranged in strip optical waveguide (2)
On microstrip line travelling wave electric pole structure；Microstrip line travelling wave electric pole structure includes successively setting on strip optical waveguide (2) from top to bottom
Strip optical waveguide (2), the first graphene micro-strip are isolated in the first graphene microstrip line (5) and the second graphene microstrip line (6) set
The dielectric isolation layer of line (5) and the second graphene microstrip line (6), the first electrode connected on the first graphene microstrip line (5)
(71) and second electrode (72), the second graphene microstrip line (6) is respectively in the two sides of first electrode (71) and second electrode (72)
Extend out connection the first grounding electrode (81), the second grounding electrode (82) and third grounding electrode (83), the 4th grounding electrode
(84)；First grounding electrode (81), the second grounding electrode (82) collectively form GSG electricity in the two sides of first electrode (71)
Pole structure；Third grounding electrode (83), the 4th grounding electrode (84) collectively form GSG electrode in the two sides of second electrode (72)
Structure.
2. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 1,
It is characterized by: the surface of substrate layer (1) is divided into two parts by the strip optical waveguide (2)；The dielectric fill layer includes
The first dielectric fill layer (31) and the second dielectric fill layer (32) being isolated by strip optical waveguide (2)；The substrate layer (1)
Material be silica.
3. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 1,
It is characterized by: the strip optical waveguide (2) is isolated with the first graphene microstrip line (5) by the first dielectric isolation layer (41),
First graphene microstrip line (5) is isolated with the second graphene microstrip line (6) by the second dielectric isolation layer (42), and described first
Dielectric isolation layer (41), the second dielectric isolation layer (42) material be one of silicon nitride, aluminum oxide, boron nitride material
Or combinations thereof body.
4. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 1,
It is characterized by: the strip optical waveguide (2) is one of silicon, silicon nitride material.
5. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 2,
It is characterized by: the material of first dielectric fill layer (31) and the second dielectric fill layer (32) is Si oxide, silicon
One or a combination set of nitrogen oxides, boron nitride or hydrogen silsesquioxane material body.
6. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 3,
It is characterized by: second dielectric isolation layer (42) with a thickness of 5nm~120nm.
7. a kind of graphene microstrip line traveling wave based on strip optical waveguide is inhaled according to claim 1 or described in any one of 2
Receipts type optical modulator, it is characterised in that: the first electrode (71), second electrode (72), the first grounding electrode (81), second connect
Ground electrode (82), third grounding electrode (83), the 4th grounding electrode (84) material be gold, silver, copper, platinum, titanium, nickel, cobalt, palladium it
One or combinations thereof body.
8. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 2,
It is characterized by: the first graphene microstrip line (5) is to the first dielectric fill layer (31) and the second dielectric fill layer
(32) side extend, extend the second dielectric isolation layer (42) afterwards both ends respectively with first electrode (71) and second electrode (72)
It is connected, access electrode of the electrode as microwave signal, another electrode in first electrode (71) and second electrode (72)
Extraction electrode as microwave signal；Along the extending direction of the first graphene microstrip line (5), the second graphene microstrip line (6) point
Do not extend the second dielectric isolation layer (42) connection the first grounding electrode (81), the second grounding electrode (82), third ground connection electricity
Pole (83) and the 4th grounding electrode (84), first grounding electrode (81), the second grounding electrode (82), third grounding electrode
(83), the 4th grounding electrode (84) is used as grounding electrode.
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