CN106980189A - Graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide - Google Patents
Graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide Download PDFInfo
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- CN106980189A CN106980189A CN201710409117.9A CN201710409117A CN106980189A CN 106980189 A CN106980189 A CN 106980189A CN 201710409117 A CN201710409117 A CN 201710409117A CN 106980189 A CN106980189 A CN 106980189A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
Abstract
The invention discloses a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, solution is limited to the larger RC constants of lump electrode structure based on graphene optical modulator in the prior art, the problem of modulation bandwidth is smaller is caused, belongs to photoelectron technical field.The present invention includes substrate layer, is arranged on strip optical waveguide and dielectric fill layer in substrate layer surface, is arranged on the microstrip line travelling wave electric pole structure in strip optical waveguide.The present invention is used to realize light modulation speed.
Description
Technical field
A kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, for realizing light modulation speed
Rate, belongs to photoelectron technical field.
Background technology
With the arrival in big data epoch, data communication service is in explosive growth, and this allows for need of the people to bandwidth
More and more higher is sought, also just determines that optical transmission system develops to ultrahigh speed, Large Copacity, integrated direction.Optical modulator and light
Switch is the core devices in optical communication network, and the structure of optical communication network is played an important role.At present, based on various machines
The optical modulator of system has all successively been developed and prepared, the modulator of current commercialization be mainly based upon niobic acid lithium material and
The optical modulator of InP-base.Recent years, the optical modulator based on Si bases is also prepared out, although itself and traditional CMOS works
Skill is compatible, but is limited in itself by its material, along with current optical modulator uses lump electrode structure, modulation bandwidth mostly
Limited by RC constants, it is still a problem that the bandwidth of optical modulator, which breaks through 50GHz,.
The absorption region of grapheme material ultra-wide spectrum, the carrier mobility of superelevation, its optical characteristics can be artificial
Regulation and control, and its technique is compatible with traditional cmos process, it is considered to be and the replacer of following Si materials, is to make optical modulator
Ideal material is (see document Kinam Kim, et al.A role for graphene in silicon-based
semiconductor devices.Nature,2011,Vol 479,p338-344).At present, the optics based on grapheme material
Modulator is widely studied, but the light modulation speed realized is less desirable, the maximum tune of current document report
Bandwidth processed is in 35GHz or so (see document H.Dalir, et al.Athermal Broadband Graphene Optical
Modulator with 35GHzSpeed, ACS Photonics 3,2016), realized no more than traditional Si base optical modulator
Modulation bandwidth.This is primarily limited to the larger RC constants limitation of lump electrode structure.And grapheme material has the load of superelevation
Transport factor is flowed, its intrinsic bandwidth of operation is up to 500GHz.
The content of the invention
It is an object of the invention to：Solution is limited to lump electrode structure based on graphene optical modulator in the prior art
Larger RC constants, causing the problem of modulation bandwidth is smaller, there is provided a kind of graphene microstrip line row based on strip optical waveguide
Ripple absorption-type optical modulator.
The technical solution adopted by the present invention is as follows：
A kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, it is characterised in that including lining
Bottom, is arranged on strip optical waveguide and dielectric fill layer in substrate layer surface, is arranged on the microstrip line in strip optical waveguide
Travelling wave electric pole structure；Microstrip line travelling wave electric pole structure includes the first graphene set gradually from top to bottom in strip optical waveguide
Microstrip line and the second graphene microstrip line, isolate strip optical waveguide, the first graphene microstrip line and the second graphene microstrip line
Dielectric isolation layer, the first electrode and second electrode of the upper connection of the first graphene microstrip line, respectively in first electrode and
The first grounding electrode for being connected on the both sides of two electrodes, the second graphene microstrip line, the second grounding electrode, the 3rd grounding electrode and
4th grounding electrode.
Further, the surface of substrate layer is divided into two parts by the strip optical waveguide；The dielectric fill layer includes quilt
The first dielectric fill layer and the second dielectric fill layer of strip optical waveguide isolation；The material of the substrate layer is titanium dioxide
Silicon.
Further, the strip optical waveguide is isolated with the first graphene microstrip line by the first dielectric isolation layer, the first stone
Black alkene microstrip line is isolated with the second graphene microstrip line by the second dielectric isolation layer, described the first dielectric isolation layer,
The material of two dielectric isolation layers is one or a combination set of silicon nitride, alundum (Al2O3), boron nitride material body.
Further, the strip optical waveguide is one of silicon, silicon nitride material.
Further, the material of first dielectric fill layer and the second dielectric fill layer is Si oxide, silicon nitrogen oxygen
One or a combination set of compound, boron nitride or hydrogen silsesquioxane material body.
Further, the thickness of second dielectric isolation layer is 5nm~120nm.
Further, the first electrode, second electrode, the first grounding electrode, the second grounding electrode, the 3rd grounding electrode,
The material of 4th grounding electrode is one or a combination set of gold, silver, copper, platinum, titanium, nickel, cobalt, palladium body.
Further, the first graphene microstrip line prolongs to the first dielectric fill layer and the second dielectric fill layer side
Stretch, extend two ends after the second dielectric isolation layer and be connected respectively with first electrode and second electrode, first electrode and second
In electrode an electrode as microwave signal access electrode, another electrode as microwave signal extraction electrode；Along first
The bearing of trend of graphene microstrip line, the second graphene microstrip line each extends over out the second dielectric isolation layer connection first and is grounded
Electrode, the second grounding electrode, the 3rd grounding electrode and the 4th grounding electrode, first grounding electrode, the second grounding electrode,
Three grounding electrodes, the 4th grounding electrode are as grounding electrode.
Further, first grounding electrode, the second grounding electrode collectively form GSG electrodes in the both sides of first electrode
Structure；3rd grounding electrode, the 4th grounding electrode collectively form GSG electrode structures in the both sides of second electrode.
In summary, by adopting the above-described technical solution, the beneficial effects of the invention are as follows：
1st, present invention employs microstrip line travelling wave electric pole structure, the modulation bandwidth of optical modulator will be not only restricted to RC constants,
Modulation bandwidth can be greatly improved, is to be based on strip optical waveguide again, prepares relatively simple；
2nd, optical modulator waveguide of the present invention can be based on SOI wafer, can be with traditional SOI CMOS technologies in preparation technology
It is mutually compatible, it is easy to integrated, and than traditional traveling-wave structure optical modulator, light modulator structure of the present invention is without strict phase velocity
Matching, you can realize the modulation bandwidth of ultra-wide, is expected to break through 200GHz.
3rd, traveling wave light modulator of the present invention can by design specific graphene-metal contact surface length and width and
Dielectric substance and thickness between two layer graphene transmission lines, to design the impedance value size of whole optical modulator, so that real
The impedance matching of existing ripple transmission line, improves modulation efficiency.
4th, the access of optical modulator of the present invention and extraction electrode employ GSG structure electrodes, are visited with existing GSG microwaves
Pin test interface is compatible, convenient test.
Brief description of the drawings
Fig. 1 ties for a kind of the three-dimensional of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide of the present invention
Structure schematic diagram.
Fig. 2 is a kind of graphene microstrip line traveling wave absorption-type optical modulator neutral body knot based on strip optical waveguide of the present invention
The supplementary notes figure of structure schematic diagram, is the supplementary notes figure of the first graphene microstrip line construction.
Fig. 3 is having first for a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide of the present invention
The waveguide cross-section structural representation of strip optical waveguide at graphene microstrip line, the second graphene microstrip line covering；
Fig. 4 is the equivalent circuit diagram of graphene microstrip line traveling wave electrode in the present invention；
Fig. 5 in the present invention in strip optical waveguide the effective refractive index imaginary part of TE moulds with the change of graphene chemical potential energy
Figure；
Fig. 6 for the present invention respectively under " On " and " Off " state difference graphene length as modulation areas when normalizing
Change output power curve figure.
In figure, 1- substrate layers, 2- strip optical waveguides, the dielectric fill layers of 31- first, the dielectric fill layers of 32- second,
The dielectric isolation layers of 41- first, the dielectric isolation layers of 42- second, 5- the first graphene microstrip lines, 6- the second graphene micro-strips
Line, 71- first electrodes, 72- second electrodes, the grounding electrodes of 81- first, the grounding electrodes of 82- second, the grounding electrodes of 83- the 3rd,
The grounding electrodes of 84- the 4th.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, not
For limiting the present invention.
A kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, as shown in Figure 1, Figure 2 with Fig. 3 institutes
Show, including the strip optical waveguide 2 being arranged on silicon dioxide liner bottom 1；The surface of substrate layer 1 is divided into two by strip optical waveguide 2
The first dielectric fill layer 31 and the second dielectric are provided with part, the both sides of strip optical waveguide 2, silicon dioxide liner bottom 1
Packed layer 32；It is disposed with the first graphene microstrip line 5 and the second graphene from top to bottom in the upper surface of strip optical waveguide 2
Microstrip line 6, strip optical waveguide 2 is isolated with the first graphene microstrip line 5 by the first dielectric isolation layer 41, the first graphene micro-strip
Line 5 is isolated with the second graphene microstrip line 6 by the second dielectric isolation layer 42；The two ends of first graphene microstrip line 5 are to first
The side of 31 and second dielectric fill layer of dielectric fill layer 32 extends, and extends two ends after the second dielectric isolation layer 42 and distinguishes
Be connected with first electrode 71 and second electrode 72, as microwave modulated signal access and pick out electrode；Second graphene is micro-
Extend out connection the first grounding electrode 81, second ground connection electricity in the both sides of first electrode 71 and second electrode 72 respectively with line 6
The grounding electrode 83 of pole 82 and the 3rd, the 4th grounding electrode 84, constitute GSG electrode structures with first electrode and second electrode respectively.
The strip optical waveguide 2 is one of silicon, silicon nitride material.
First dielectric isolation layer 41, the material of the second dielectric isolation layer 42 are silicon nitride, alundum (Al2O3), nitrogen
Change one or a combination set of boron material body.
The material of the dielectric fill layer 32 of first dielectric fill layer 31 and second is Si oxide, silicon nitrogen oxidation
One or a combination set of thing, boron nitride or HSQ materials body.
The thickness of second dielectric isolation layer 42 is 5nm~120nm.
The first electrode 71, second electrode 72, the first grounding electrode 81, the second grounding electrode 82, the 3rd grounding electrode
83rd, the material of the 4th grounding electrode 84 is one or a combination set of gold, silver, copper, platinum, titanium, nickel, cobalt, palladium body.
An electrode is used as the access electrode of microwave signal, another electrode in the first electrode 71, second electrode 72
It is used as the extraction electrode of microwave signal；First grounding electrode 81, the second grounding electrode 82, the 3rd grounding electrode the 83, the 4th
Grounding electrode 84 is as grounding electrode；First grounding electrode 81, the second grounding electrode 82 in the both sides of first electrode 71,
Collectively form GSG electrode structures；3rd grounding electrode 83, the 4th grounding electrode 84 are collectively formed in the both sides of second electrode 72
GSG electrode structures；Two GSG electrode structures and the first graphene microstrip line 5, the second graphene microstrip line 6 and dielectric isolation
Layer collectively forms microstrip line travelling wave electric pole structure；Two GSG electrode structures are compatible with existing GSG microwave probes test interface.
The present invention optical modulator operation principle be：When device works, bias voltage is carried in by GSG microwave probes
On GSG electrodes, by changing voltage, the complex dielectric permittivity of dynamic tuning graphene, so as to influence suction of the strip optical waveguide to light
Receive.Effective refractive index real part correspond to the phase place change of optical signal, and its imaginary part correspond to the decay of optical signal.First graphene
Microstrip line 5 is both as the transmission line of microwave signal, and as the absorption controlled material of optical signal, when applying bias voltage is operated in
During some point so that graphene-strip optical waveguide (the first graphene microstrip line 5, the second graphene microstrip line 6 and strip light
Waveguide 2) there is stronger absorption to optical signal, strip optical waveguide is exported almost without optical signal, is " Off State "；And change
When change applying bias voltage is operated in another point so that graphene-strip optical waveguide is very small to optical signal absorption, light letter
Number from strip optical waveguide output, be " On State ".Thus, it can be achieved to believe light by regulating and controlling the optical characteristics of graphene
Number modulation function.As a result of travelling wave electric pole structure, its modulation bandwidth is no longer limited by the limitation of RC constants, and it modulates band
Width can be estimated by equation below:
Wherein c is the ray velocity in vacuum, and L is effective modulation areas length of modulation areas, nmFor having for microwave signal
Imitate refractive index, n0For the effective refractive index of light wave in the waveguide.Graphene has stronger interaction with optical signal, thus only needs
Graphene length L that will be shorter is that stronger light absorbs can be achieved, i.e., matched without strict phase velocity, i.e., | nm-n0| without very
Small value, you can realize the modulation bandwidth of ultra-wide.
Technical scheme is further illustrated with reference to specific embodiment：The present embodiment one kind is based on strip-shaped convection
The structural representation for the graphene microstrip line traveling wave absorption-type optical modulator led as shown in Figure 1, Figure 2 and Figure 3.Use wavelength for
1.55 μm of light wave, is accessed, the height and width of strip optical waveguide 2 are respectively 220nm from any one port of strip optical waveguide 2
And 500nm, it is Si materials；First dielectric fill layer 31, the second dielectric fill layer 32 are HSQ materials；First dielectric
Separation layer 41, the second dielectric isolation layer 42 are respectively the thick hBN materials of 5nm, 20nm；First graphene microstrip line 5, the second stone
The material of black alkene microstrip line 6 is single-layer graphene, and its specific micro-strip line pattern can be defined by beamwriter lithography, then by oxygen etc.
Gas ions etch away the graphene of redundance to obtain；First electrode 71, second electrode 72, the first grounding electrode 81,
The material of two grounding electrodes 82, the 3rd grounding electrode 83 and the 4th grounding electrode 84 be in palladium metal plated with gold as contact
Electrode；The two ends of first graphene microstrip line 5 each extend over out connection first electrode 71 and second electrode 72, are adjusted as microwave
The access electrode and extraction electrode of signal processed；One end of second graphene microstrip line 6 has in the left and right sides of first electrode 61 prolongs
The first grounding electrode 81 of connection and the second grounding electrode 82 are stretched, GSG electricity is constituted as grounding electrode, and with first electrode 71
Pole structure；The connection that extended out in the left and right sides of second electrode 72 of the other end of second graphene microstrip line 6 the 3rd connects
The grounding electrode 84 of ground electrode 83 and the 4th, GSG electrode structures are constituted as grounding electrode, and with second electrode 72.
Fig. 4 is the equivalent circuit diagram of graphene microstrip line traveling wave electrode of the embodiment of the present invention.Graphene and metal electrode it
Between have an ohmic contact resistance Rc, the width of the first graphene microstrip line 5 is 5 μm, the first graphene microstrip line 5 and the second graphene
The thickness of the second dielectric layer 92 between microstrip line 6 is 20nm, and according to microstrip line traveling wave line model, the first graphene is micro-
The traveling wave line characteristic impedance Z constituted with the graphene microstrip line 6 of line 5 and second0The Ω of ≈ 3, and the total impedance of whole modulator
Value is constituted together with ohmic contact resistance and traveling wave line characteristic impedance between graphene and metal electrode, to reach
Impedance matching, reduces microwave reflection, the total impedance value of whole modulator should be close to 50 Ω.Between graphene and metal electrode
Ohmic contact resistance Rc value sizes, are closely related with the good contact of graphene and metal, and have graphene-metal contact
Face is wider, and its ohmic contact resistance Rc values are smaller, can be by formula Rc=Rg-m/ W estimations, wherein Rg-mIt is connecing for graphene and metal
Get an electric shock and hinder, its value size is general in the change of 100~3000 Ω μ ms, and relevant with the quality of grapheme material, W is graphite
The interface width of alkene-metal, thus we can be designed by the width of the contact surface of graphene-metal reasonable in design
The size of rational Rc values, to realize impedance matching, improves modulation efficiency.
Fig. 5 is the effective refractive index of TE moulds of the embodiment of the present invention with the variation diagram of graphene chemical potential energy.The present embodiment
Waveguiding structure only supports TE basic modes to transmit, when graphene chemical potential energy is in 0~0.4eV, TE Effective indexes imaginary values ratio
Larger, when graphene chemical potential energy is in 0.5~1eV, TE Effective index imaginary values are smaller, and graphite alkylene is chosen respectively
Potential energy is learned in 0eV and 0.7eV as " Off " and " On " state, optical signal passes through the normalized output power during optical modulator
Change curve is as shown in Figure 6.When the graphene overlay length for being covered in strip optical waveguide is 200 μm, the light modulation structure can
22.2dB extinction ratio is realized, and insertion loss only has 0.72dB.
It was found from formula (1), when L=250 μm, even if the effective refractive index difference between microwave and light wave is 2, the light modulation
The 3dB modulation bandwidths of device may be up to 267.2GHz.And the effective refractive index difference between microwave and light wave can be according to insulating barrier material
The selection of material and further reduce, realize microwave signal and the speeds match of lightwave signal, it is possible to realize higher modulation
Bandwidth.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (9)
1. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide, it is characterised in that including substrate
Layer (1), is arranged on strip optical waveguide (2) and dielectric fill layer on substrate layer (1) surface, is arranged on strip optical waveguide (2)
On microstrip line travelling wave electric pole structure；Microstrip line travelling wave electric pole structure includes setting successively in strip optical waveguide (2) from top to bottom
The the first graphene microstrip line (5) and the second graphene microstrip line (6) put, isolation strip optical waveguide (2), the first graphene micro-strip
The first electrode connected on the dielectric isolation layer of line (5) and the second graphene microstrip line (6), the first graphene microstrip line (5)
(71) and second electrode (72), respectively in the both sides of first electrode (71) and second electrode (72), the second graphene microstrip line (6)
The first grounding electrode (81), the second grounding electrode (82), the 3rd grounding electrode (83) and the 4th grounding electrode (84) of upper connection.
2. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 1,
It is characterized in that：The surface of substrate layer (1) is divided into two parts by the strip optical waveguide (2)；The dielectric fill layer includes
The first dielectric fill layer (31) and the second dielectric fill layer (32) isolated by strip optical waveguide (2)；The substrate layer (1)
Material be silica.
3. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 1,
It is characterized in that：The strip optical waveguide (2) is isolated with the first graphene microstrip line (5) by the first dielectric isolation layer (41),
First graphene microstrip line (5) is isolated with the second graphene microstrip line (6) by the second dielectric isolation layer (42), and described first
Dielectric isolation layer (41), the material of the second dielectric isolation layer (42) are one of silicon nitride, alundum (Al2O3), boron nitride material
Or its assembly.
4. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 1,
It is characterized in that：The strip optical waveguide (2) is one of silicon, silicon nitride material.
5. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 2,
It is characterized in that：The material of first dielectric fill layer (31) and the second dielectric fill layer (32) is Si oxide, silicon
One or a combination set of nitrogen oxides, boron nitride or hydrogen silsesquioxane material body.
6. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 3,
It is characterized in that：The thickness of second dielectric isolation layer (42) is 5nm~120nm.
7. a kind of graphene microstrip line traveling wave absorption-type light modulation based on strip optical waveguide according to claim 1,2
Device, it is characterised in that：The first electrode (71), second electrode (72), the first grounding electrode (81), the second grounding electrode
(82), the 3rd grounding electrode (83), the 4th grounding electrode (84) material for one of gold, silver, copper, platinum, titanium, nickel, cobalt, palladium or its
Assembly.
8. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 2,
It is characterized in that：The first graphene microstrip line (5) is to the first dielectric fill layer (31) and the second dielectric fill layer
(32) side extend, extend the second dielectric isolation layer (42) afterwards two ends respectively with first electrode (71) and second electrode (72)
It is connected, an electrode is used as the access electrode of microwave signal, another electrode in first electrode (71) and second electrode (72)
It is used as the extraction electrode of microwave signal；Along the bearing of trend of the first graphene microstrip line (5), the second graphene microstrip line (6) point
Do not extend the second dielectric isolation layer (42) and connect the first grounding electrode (81), the second grounding electrode (82), the 3rd ground connection electricity
Pole (83) and the 4th grounding electrode (84), first grounding electrode (81), the second grounding electrode (82), the 3rd grounding electrode
(83), the 4th grounding electrode (84) is as grounding electrode.
9. a kind of graphene microstrip line traveling wave absorption-type optical modulator based on strip optical waveguide according to claim 8,
It is characterized in that：First grounding electrode (81), the second grounding electrode (82) are collectively formed in the both sides of first electrode (71)
GSG electrode structures；3rd grounding electrode (83), the 4th grounding electrode (84) collectively form GSG in the both sides of second electrode (72)
Electrode structure.
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| US11860502B2 (en) | 2019-12-05 | 2024-01-02 | Fundació Institut De Ciències Fotòniques | Electro-optical modulator and a method for obtaining an electro-optical modulator |
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