CN106978582A - Film build method and film formation device - Google Patents
Film build method and film formation device Download PDFInfo
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- CN106978582A CN106978582A CN201610917404.6A CN201610917404A CN106978582A CN 106978582 A CN106978582 A CN 106978582A CN 201610917404 A CN201610917404 A CN 201610917404A CN 106978582 A CN106978582 A CN 106978582A
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- workpiece
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- sputtering
- film forming
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Even if the present invention provides a kind of film build method and film formation device of the reflectivity that metallic film can be also improved in the case where performing sputtering at high speed.The film build method of the present invention includes：Heating process, by the temperature below the softening temperature of resinous workpiece heat to the resin for constituting the workpiece；Process is moved into, the workpiece heated by heating process is moved into film forming chamber room；Process is depressurized, to being depressurized in film forming chamber room；Non-reactive gas supply step, non-reactive gas are supplied to film forming chamber room；Plasma process, high frequency voltage is applied to the plasma electrode being disposed in film forming chamber room；And sputtering process, to comprising target material and the sputtering electrode that is disposed in film forming chamber room applies voltage.
Description
Technical field
The present invention relates to one kind using sputtering (sputtering) come the film forming to resinous workpiece formation metallic film
Method and film formation device.
Background technology
For example, glass is used before the optical element such as reflection shield (reflector) or meters of the headlamp of automobile always
The inorganic material base material such as glass.However, for the light-weighted demand for the purpose of fuel efficiency to improve automobile etc., and enter
The displacement gone to resin base material.In addition, previously for metal film film forming more use plating, but in recent years in order to reduce environment
Load and carrying out the displacement to dry processes such as sputtering methods.Accordingly, with respect to this part, finished for minute surface or make it
Purpose with metal-like, and target (target) is used as by the use of using metals such as aluminium to the resin through ejection formation
Sputtering film forming.
In addition, after the film forming using sputtering, in order to which the oxidation or protection surface that prevent metal film are injury-free etc., and it is many
Perform and utilize the silica diaphragm of plasma activated chemical vapour deposition (Chemical Vapor Deposition, CVD) etc.
Film forming.That is, another film formation device is transported to using the workpiece after the film forming of sputtering, and entered in the chamber of the film formation device
Row utilizes the plasma CVD of the monomer gas such as HMDSO (six-methyl-two-siloxanes (hexamethyldisiloxane)),
Thus the surface after the film forming using sputtering carries out the film forming of diaphragm.
It is also proposed that there is the film forming and composite membrane-forming or the device of polymerization film formation performed in same chamber using sputtering.Patent
There is following film formation device disclosed in document 1, sputtering is configured to advise by it with electrode and composite membrane-forming or polymerization film formation with electrode
The position that set a distance is separated.It is first, workpiece is oppositely disposed with sputtering electrode in the film formation device, and by inert gas
After in introduction chamber room, DC voltage is applied to sputtering electrode and the film forming using sputtering is performed.Then, move workpiece and by work
Part is oppositely disposed with electrode with composite membrane-forming or polymerization film formation, and by after in the monomer gas introduction chamber such as HMDSO room, to compound
Film forming or polymerization film formation apply high frequency voltage with electrode, so as to perform composite membrane-forming or polymerization film formation.Remember in the patent document 1
In the film formation device of load, with without using target on configuration flashboard (shutter) composition.
In this sputtering for resinous workpiece, it must make to turn into high vacuum in chamber in the past, so processing is needed
Will be for a long time.In contrast, in the film formation device described in patent document 2, by with the surface relative to target material
Product and mode as every 1 square centimeter more than 25 watts of input power are to sputtering electrode application DC voltage, and by chamber
Inside be set to 0.1 Pascal less than 1.0 Pascals pressure in the case of, also can the suitably shape on resinous workpiece
Into metallic film, the high-speed sputtering the time required to shortening film forming can be realized.
In addition, in the case of this formation metallic film to resinous workpiece, it is known that if when starting sputtering in work
There is moisture in the surface of part, then can produce problems with：The reflectivity on the surface of the metallic film after sputtering declines, or produces gold
The surface of category film looks the phenomenon for being referred to as xanthochromia with yellow.
Therefore, in patent document 3, disclose to possess and be connected to the pre- of film forming chamber via gate valve (gate valve)
The film formation device of standby chamber and the preparation chamber depressurization unit depressurized to the preparation chamber.In addition, in patent document 4
In, disclose the film formation device for starting sputtering when the partial pressure of oxygen or the partial pressure of moisture turn into below setting value.And then, in patent
In document 5, disclose when the amount of oxygen or moisture turns into below setting value relative to the ratio between amount of atom for constituting metallic film
Start the film formation device of sputtering.
[prior art literature]
[patent document]
[patent document 1] Japanese Patent Laid-Open 2011-58048 publications
[patent document 2] International Publication WO2015/037315A1 publications
[patent document 3] Japanese Patent Laid-Open 2015-101768 publications
[patent document 4] Japanese Patent Laid-Open 2015-113513 publications
[patent document 5] Japanese Patent Laid-Open 2015-151618 publications
[patent document 6] International Publication WO2013/136576A1 publications
The content of the invention
[invention problem to be solved]
The patent document 3 to the invention described in patent document 5 is can to improve the reflection of the metallic film after sputtering
The excellent invention of rate, but the problem of can produce film forming the required time is elongated altogether.This problem is needed in the sputtering as in the past
It is not a problem, but is splashed for the high speed that is able to carry out as described in patent document 2 as described in the case of wanting for a long time
For the film formation device penetrated, the problem of but producing the obstacle as high-speed sputtering.
In addition, in order to perform sputtering at high speed, and must rapidly to being depressurized in chamber, but in this case, because every
Hot cooling effect and the condensation and the attachment to workpiece surface for easily producing moisture in chamber, so described problem becomes particularly
It is significant.
In the case where producing this problem, as described above, the reflectivity on the surface of metallic film after sputtering declines, or
The surface that person produces metallic film looks the phenomenon for being referred to as xanthochromia with yellow.
There is following record in patent document 6：Near setting film formation device at Jet forming machine, and will be by ejection formation
The workpiece of machine ejection formation directly moves into film formation device, thus the workpiece after the adsorbed gas of moisture etc. is attached to ejection formation
Before, by the work transporting into film formation device.But, there is also can not be near setting film formation device at Jet forming machine
Situation.
The present invention is to solve the problem and winner, it is therefore intended that provide it is a kind of can in the case where performing sputtering
Improve the film build method and film formation device of the reflectivity of metallic film.
[means for solving problem]
1st invention is a kind of using the film build method for sputtering the film to form metal to resinous workpiece, and including：
Heating process, by the temperature below the softening temperature of resinous workpiece heat to the resin for constituting the workpiece；Process is moved into, will
The workpiece heated by the heating process is moved into chamber；Process is depressurized, to being depressurized in the chamber；Sputtering
Process, to comprising target material and the sputtering electrode that is disposed in the chamber applies voltage, and is carried out to heated workpiece
Sputtering；And process is taken out of, the workpiece after the completion of film forming is taken out of out of described chamber.
2nd invention is further included between the decompression process and the sputtering process：Gas supply step, gas is supplied
In to the chamber；And plasma treatment operation, high-frequency electrical is applied to the plasma electrode being disposed in the chamber
Pressure.
3rd invention will be decompressed to 0.1 Pascal less than 1.0 Paasches in the decompression process in the chamber
The pressure of card, and in the sputtering process, turn into every 1 square centimeter 25 with the surface area relative to the target material
The mode of input power more than watt, DC voltage is applied to the sputtering electrode.
4th invention is in the heating process, when it is that T Celsius spends to constitute the softening temperature of resin of the workpiece, with
Scope more than T/2 degree Celsius and below T degree Celsius is heated to the workpiece.
5th invention is in the heating process, by the workpiece heat to more than 40 degree Celsius.
The resin of the composition workpiece in 6th invention is makrolon.
7th invention is a kind of using sputtering come the film build method of the film to resinous workpiece formation metal, and it includes：
Process is moved into, the workpiece is moved into chamber；Process is depressurized, to being depressurized in the chamber；Sputtering process, to including target
Material material and the sputtering electrode application voltage being disposed in the chamber；And take out of process, by the workpiece after the completion of film forming from
Take out of, also, further included between the decompression process and the sputtering process in the chamber：Gas supply step, by gas
Body is supplied to the chamber；And plasma treatment operation, the plasma electrode being disposed in the chamber is applied
High frequency voltage.
8th invention be it is a kind of utilize sputtering come to resinous workpiece formation metal film film formation device, its feature
It is possess：Heating part, by the temperature below the softening temperature of the workpiece heat to the resin for constituting the workpiece；Chamber, is received
Receive the workpiece heated by the heating part；Sputtering electrode, comprising target material, and is disposed in the chamber；And
Power supply, applies voltage to the sputtering electrode and heated workpiece is sputtered.
9th invention is more standby：Gas supply part, is provided gas tangentially in the chamber；Plasma electrode, is disposed in institute
State in chamber；And high frequency electric source, to the plasma electrode apply high frequency voltage and to sputtering before workpiece progress
Corona treatment.
[The effect of invention]
According to the 1st invention, the 4th invention, the 5th invention and the 8th invention, by by resinous workpiece heat to softening temperature
Following temperature, even if so as to can also prevent moisture to the knot on the surface of workpiece in the case of being depressurized in chamber
Dew, and the moisture on the surface for being attached to workpiece can be removed.Metallic film formed by sputtering is utilized thereby, it is possible to improve
Reflectivity.
, can be further by performing plasma process before sputtering according to the 2nd invention, the 7th invention and the 9th invention
Remove the moisture on the surface for remaining in resinous workpiece.Metal foil formed by sputtering is utilized thereby, it is possible to further improve
The reflectivity of film.
According to the 3rd invention, when performing the film forming using high-speed sputtering under partial vacuum by high input power, it is not required to
The time needed for the removal of moisture is wanted, so as to perform the film forming using sputtering with shorter time.
According to the 6th invention, attachment of moisture can not be made in the surface of the workpiece of makrolon, and utilized and splashed by film forming portion
Penetrate to form metallic film.Therefore, it is possible to prevent the surface in makrolon from hydrolyzing, so that by metallic film with securely
The state for being close contact in makrolon is formed.
Brief description of the drawings
Fig. 1 is the synoptic diagram of the film formation device of the present invention.
Fig. 2 is the block diagram for the control system for representing the film formation device of the present invention.
Fig. 3 is the flow chart for the film build method for representing the 1st embodiment of the present invention.
Fig. 4 is the curve map for representing to be formed at the reflectivity of the aluminium on the workpiece W of makrolon surface.
Fig. 5 is the curve map for representing to be formed at the reflectivity of the aluminium on the workpiece W of methacrylic resin surface.
Fig. 6 is the flow chart for the film build method for representing the 2nd embodiment of the present invention.
Fig. 7 is the curve map for representing to be formed at the reflectivity of the aluminium on the workpiece W of makrolon surface.
Fig. 8 is the curve map for representing to be formed at the reflectivity of the aluminium on the workpiece W of makrolon surface.
【Primary clustering symbol description】
10：Film forming chamber
11：Body
12：Entrance side opening/closing portion
13：Workpiece mounting portion
14、15：Filler
16：Outlet side opening/closing portion
19：Grounding parts
21：Electrode portion
22：Target material
23：Sputtering electrode
24：Plasma electrode
31、34、39、48、49：Open and close valve
32：Flow rate regulating valve
33：The supply unit of non-reactive gas
35：Flow rate regulating valve
36：The supply unit of unstrpped gas
37：Turbomolecular pump
38：Auxiliary pump
41：Dc source
45：High frequency electric source
46：Matching box
51：Flashboard
52：Supporting part
53：Cylinder
54：Piston rod
61：Conveying unit
62：Workpiece introduction part
63：Oven
64：Heater
90：Control unit
91：Transport mechanism drive division
92：Open and close valve drive division
93：Opening/closing portion drive division
94：Electrode drive portion
W：Workpiece
S11~S19, S21~S30：Step
Embodiment
Hereinafter, embodiments of the present invention are illustrated based on accompanying drawing.Fig. 1 is the summary of the film formation device of the present invention
Figure.
The film formation device of the embodiment performs the film forming using sputtering to resinous workpiece W with utilizing plasma
CVD film forming.Furthermore, as workpiece W material, such as using makrolon.Makrolon is not only cheap, and with machinery
The characteristic that intensity is strong, weatherability transparency is high.In addition, the makrolon have sputtering when and metallic film adhesion it is high
Characteristic.But, if moisture is present in the surface of makrolon in sputtering, not only the reflectivity of metallic film declines, and
Following phenomenon is produced sometimes：Because sputtering when energy trigger hydrolysis, the surface deterioration of makrolon, so as to cause metal foil
Film is peeled off.
Furthermore, it is possible to use methacrylic acid (polymethyl methacrylate (polymethyl methacrylate,
PMMA)) resin is used as workpiece W material instead of makrolon.Not only cheap but also transparency is high for methacrylic resin, therefore
And it is used for speculum (mirror) etc., in addition, there is feeling of high class because of transparency, so the also container of cosmetics to be used in
Deng demand uprise.In addition, being used as workpiece W material, it is possible to use acrylonitrile-butadiene-styrene resin
Other resins such as (acrylonitrile-butadiene-styrene resin, ABS resin).
As shown in figure 1, the film formation device possesses film forming chamber 10, the film forming chamber 10 is opened comprising body 11 with entrance side
Closing part 12 and outlet side opening/closing portion 16.The film forming chamber 10 is connected via conveying unit 61 with workpiece introduction part 62.
The workpiece introduction part 62 receives workpiece W from the oven 63 of the heating part as the present invention.The oven 63 has
The composition of having heaters 64 is arranged in peripheral part, the workpiece W being accommodated in after its internal ejection formation is heated to constituting workpiece W
Resin softening point below temperature.Workpiece W is removed between oven 63 and workpiece introduction part 62 by special carrying device
Send.Furthermore, workpiece W can be also transported to workpiece introduction part 62 from oven 63 by operator.
As be described hereinafter, in the oven 63, come to add workpiece W after the times of 10 minutes to or so a few hours
Heat.On the other hand, the film formation device as be described hereinafter as can carry out high-speed sputtering, film formation process was completed with time of 1 minute or so.
Therefore, as the oven 63, with following composition：Can store in the lump than in film formation device once can film forming workpiece W
More workpiece W, and heated.
Constituting the entrance side opening/closing portion 12 of a part for film forming chamber 10 can move between move-in position and closing position
Dynamic, the move-in position is the position for moving into heated resinous workpiece W in oven 63, and the closing position is
The position of closed film forming chamber 10 is constituted via filler (packing) 14 between body 11.In entrance side opening/closing portion
12 are moved in the state of move-in position, are formed in the left lateral sides of film forming chamber 10 and move into workpiece W to film forming chamber 10 and open
Oral area.
Similarly, position and closing position can taken out of by constituting the outlet side opening/closing portion 16 of a part for film forming chamber 10
Between move, the position that takes out of is the position for taking out of the resinous workpiece W after film forming, and the closing position is and body
The position of closed film forming chamber 10 is constituted between 11 via filler 15.It is moved in outlet side opening/closing portion 16 and takes out of position
In the state of, the opening portion that workpiece W is taken out of from film forming chamber 10 is formed in the right side side of film forming chamber 10.
Multiple workpiece W thereon will be loaded from workpiece introduction part 62 to transport workpiece W workpiece mounting portion 13, via
Conveying unit 61 is transported to film forming chamber 10, in addition, the workpiece mounting portion 13 by multiple workpiece W after film forming from film forming chamber 10
Take out of.The workpiece mounting portion 13 is configured to：Using the cantilevered drive mechanism being disposed in workpiece introduction part 62, and in workpiece
Workpiece W in introduction part 62 receive position, in film forming chamber 10 into film location and by workpiece W from film forming chamber 10 to
Moved between what the opposite side of workpiece introduction part 62 took out of take out of position.Moreover, the shift action of the workpiece mounting portion 13 is by aftermentioned
The drive control of transport mechanism drive division 91.
In addition, the film formation device possesses sputtering electrode 23, the sputtering electrode 23 includes electrode portion 21 and target material 22.
The sputtering electrode 23 is installed on the body 11 of film forming chamber 10 via the insulating component for eliminating diagram.Furthermore, constitute film forming
The body 11 of chamber 10 is grounded using grounding parts 19.The sputtering electrode 23 is connected to dc source 41.
Furthermore, as the dc source 41, using every 1 square can be turned into the surface area relative to target material 22
The mode of centimetres more than 25 watts of input power, DC voltage person is applied to sputtering electrode 23.That is, the dc source 41 is relative
Every 1 square centimeter more than 25 watts are inputted as the input power to sputtering electrode 23 in the surface area of target material 22.Target
Material material 22 uses Al (aluminium).Furthermore, it is possible to use Al alloys replace Al.In addition, it is possible to use Cr (chromium) or stainless steel
(SUS) Al or Al alloys are replaced.
And then, the film formation device possesses plasma electrode 24.The plasma electrode 24 is identical with sputtering electrode 23, warp
The body 11 of film forming chamber 10 is installed on by eliminating the insulating component of diagram.In addition, the plasma electrode 24 is with matching
Case (matching box) 46 and high frequency electric source 45 are connected.
The body 11 of film forming chamber 10 is constituted via open and close valve 31 and flow rate regulating valve 32 with argon gas, nitrogen, oxygen etc.
The supply unit 33 of non-reactive gas is connected.In addition, the body 11 for constituting film forming chamber 10 is adjusted via open and close valve 34 and flow
Valve 35 and be connected with the supply unit 36 of unstrpped gas.As the unstrpped gas, HMDSO is used.But, as long as being the gas containing Si
Body, then can also be used HMDS (six-methyl-two-silazane (hexamethyldisilazane)) etc. to replace HMDSO.And then,
The body 11 for constituting film forming chamber 10 is connected via open and close valve 39 with turbomolecular pump 37, and the turbomolecular pump 37 is via opening and closing
Valve 48 and be connected with auxiliary pump 38.And then, body 11 of the auxiliary pump 38 via open and close valve 49 also with composition film forming chamber 10
Connection.
In addition, the film formation device possesses flashboard 51, the flashboard 51 can utilize the driving of cylinder 53, and in such as Fig. 1
Covered as shown in dotted line by being abutted with sputtering electrode 23 target material 22 abutted position, with as shown in solid lines in fig. 1 as
Lifted between the retreating position supported near the bottom of film forming chamber 10 by supporting part 52.The flashboard 51 be the conductor such as metal,
And the material comprising nonmagnetic material.
Fig. 2 is the block diagram for the control system for representing the film formation device of the present invention.
The film formation device possesses the control unit 90 being integrally controlled to device, and the control unit 90 possesses：Execution logic
The central processing unit (central processing unit, CPU) of computing, storage have the operation program needed for the control of device
Read-only storage (read only memory, ROM), in control temporary transient data storage etc. random access memory (random
Access memory, RAM) etc..The control unit 90 is connected with following portion：Transport mechanism drive division 91, to making shown in Fig. 1
Workpiece mounting portion 13 move transport mechanism be driven control；Open and close valve drive division 92, to open and close valve 31, open and close valve 34,
Control is opened and closed in open and close valve 39, open and close valve 48, open and close valve 49 etc.；Opening/closing portion drive division 93, to entrance side opening/closing portion 12 and goes out
Control is opened and closed in mouth side opening/closing portion 16；And electrode drive portion 94, sputtering electrode 23 and plasma electrode 24 are driven
Dynamic control.In addition, the control unit 90 is optionally also connected with oven 63.
Then, to being illustrated using the film forming action with the film formation device constituted as described above.Fig. 3 is to represent this hair
The flow chart of the film build method of the 1st bright embodiment.
When performing film forming action using the film formation device, the workpiece W through ejection formation is transported to oven 63, and it is right
Workpiece W is heated (step S11).Constitute workpiece W resin softening temperature be T degree Celsius in the case of, now plus
Hot temperature is preferably the scope more than T/2 degree Celsius and below T degree Celsius.If the temperature exceedes T degree Celsius, workpiece W is produced
The problem of deformation etc..If in addition, the temperature is less than T/2 degree Celsius, preventing moisture from becoming to the function of the condensation on workpiece W surface
Obtain insufficient, and can not fully remove the moisture on the surface for being attached to workpiece W.In addition, for other viewpoints, the temperature is excellent
Elect the scope below more than 40 degree Celsius and T degree Celsius as.When workpiece W temperature turns into more than 40 degree, moisture can be prevented
To the condensation on workpiece W surface, and the moisture on the surface for being attached to workpiece W can be removed.
Furthermore, the softening temperature for constituting workpiece W resin is the temperature for being also referred to as heat resisting temperature etc..Softening temperature by
Molecular weight (degree of polymerization) or supply water or additive influence and occur change to a certain degree, but still to be (poly- by the resin
Compound) species and the temperature that substantially determines, be in the case of polycarbonate 120 degree Celsius~140 degree Celsius or so, in first
It is 80 degree~100° centigrade Celsius or so in the case of base acrylic resin or ABS resin.Therefore, in the situation of makrolon
Under, as long as being heated with 60 degree Celsius~140 degree Celsius of scope in the oven 63, in methacrylic resin or
In the case of ABS resin, as long as being heated with the scope of 40 degree~100° centigrade Celsius.
In addition, the oven 63 is preferred to workpiece W heat time, the time that workpiece W is arranged in oven 63
For 10 minutes to a few hours or so.In the case of being shorter than the time in the heat time, prevent moisture to the knot on workpiece W surface
The function of dew becomes insufficient, and can not fully remove the moisture on the surface for being attached to workpiece W.In addition, long in the heat time
In the case of the time, the surfaction of workpiece W resin is constituted, so as to form the decline of the reflectivity after metallic film.
Furthermore, in this embodiment, utilize 63 pairs of the oven with the composition that having heaters 64 is arranged in peripheral part
Workpiece W is heated, but the heating part that other are constituted such as with hot plate can also be used.
If workpiece W heating terminates, the workpiece W after heating is transported to workpiece introduction part 62 from oven 63.Then,
Workpiece W is moved into film forming chamber 10 (step S12) from workpiece introduction part 62.From oven 63 to 10 pairs of works of film forming chamber
The conveyance that part W is carried out is preferably to be performed within the time that workpiece W does not turn cold substantially.Accordingly, it would be desirable to will be taken out of from oven 63
Workpiece W transport immediately to film forming chamber 10.
In workpiece W conveyance, entrance side opening/closing portion 12 is set to be moved to after move-in position, as shown in phantom in Figure 1, will
Be placed in workpiece mounting portion 13 workpiece W be configured in film forming chamber 10 with 23 pairs of sputtering electrode to position.In addition, as schemed
Shown in solid in 1, flashboard 51 is configured at the retreating position near the bottom of film forming chamber 10.In this condition, the work of cylinder 53
Stopper rod (cylinder rod) 54 turns into the intrinsic contraction state for being incorporated in cylinder 53.
If workpiece W is moved in film forming chamber 10, entrance side opening/closing portion 12 is configured at closing position.Furthermore, in order to
The interference of entrance side opening/closing portion 12 and workpiece mounting portion 13 is avoided, and otch etc. is formed on entrance side opening/closing portion 12.Then, will
0.1 Pascal is decompressed in film forming chamber 10 to the low vacuum (step S13) of 1 Pascal or so.Utilizing turbomolecular pump 37
Decompression before, be carried out at high speed using the auxiliary pumps such as rotary pump 38 and be decompressed to 100 Pascals or so.Thereafter, using maximum exhaust speed
Spend for every 1 second more than 300 liters of turbomolecular pump 37, so will can be decompressed to the time of 20 seconds or so in film forming chamber 10
0.1 Pascal to 1 Pascal or so low vacuum.
In the decompression, produced because of heat-insulated cooling effect the condensation of moisture in film forming chamber 10 with to workpiece W surface
Attachment.Especially, in order to perform processing as the film formation device such as the present invention at high speed, and need rapid to subtracting in chamber
Pressure, in this case, easily produces the condensation and the attachment on the surface to workpiece W of the moisture in chamber.However, as described above,
Workpiece W is pre-heated to the temperature below the softening point of resin, so moisture can be prevented to the condensation on workpiece W surface.
If film forming chamber 10 is through decompression, by opening open and close valve 31, and using the argon gas for example as inert gas from non-
The supply unit 33 of reactant gas is supplied to film forming chamber 10, and turns into 0.5 Pascal with the vacuum in film forming chamber 10
The mode of~3 Pascals makes in film forming chamber 10 by argon gas full of (step S14).
Then, sputter process (step S15) is performed.When carrying out sputter process, DC voltage is assigned from dc source 41
Give to sputtering electrode 23.Thus, the film as the Al of target material 22 is formed on workpiece W surface by the use of sputtering phenomenon.
Furthermore, in the sputter process process, turned into the surface area relative to the target material 22 of sputtering electrode 23
The mode of every 1 square centimeter more than 25 watts of input power, sputtering electrode 23 is put on from dc source 41 by DC voltage.
Thus, even if in the case of being low vacuum in the film forming chamber 10, also can resinous workpiece W surface suitable form Al
Film.Furthermore, it is this perform sputter process using big input power in the case of, it is non-cohesive in moisture as described
The film forming using sputtering is performed in the state of workpiece W surface, so reflectivity can be improved.In addition, in makrolon
In the case of workpiece W, it can prevent from hydrolyzing on surface, so as to prevent peeling-off using metallic film formed by sputtering
Phenomenon.
If completing the film forming using sputtering by the process, then, the utilization plasma of Si oxides is performed
CVD film forming.In the case where performing plasma CVD film forming, as shown in solid lines in fig. 1, workpiece mounting portion 13 will be placed in
Workpiece W be configured in film forming chamber 10 with 24 pairs of plasma electrode to position.In addition, as shown in phantom in Figure 1, will
Flashboard 51 is configured at the abutted position for abutting and covering target material 22 with sputtering electrode 23.
In this condition, by opening open and close valve 34, and using the supply unit as the HMDSO of unstrpped gas from unstrpped gas
36 supplies are set to the Pascal's (step of 0.1 Pascal~10 in film forming chambers 10, and by the vacuum in film forming chamber 10
S16).Then high frequency voltage is assigned from the plasma electrode 24 of high frequency electric source 45 via matching box 46, thus performs and utilize
The film forming (plasma polymerization processing) (step S17) of ionomer cvd.Thus, reacted and made by raw material by plasma CVD
The diaphragm of gas is piled up in workpiece W surface (surface of Al film).
If being completed using the film forming of plasma CVD, to being exhausted in film forming chamber 10.Then, by outlet side
Opening/closing portion 16, which is configured at, to take out of behind position, as shown in phantom in Figure 1, workpiece mounting portion 13 is moved to the outer of film forming chamber 10
Portion, thus, using the transport mechanism for eliminating diagram, the workpiece W after the completion of the film forming that will be placed in workpiece mounting portion 13 is removed
Go out (step S18).
Then, judge whether the processing to whole workpiece W terminates (step S19).Terminate in the processing to whole workpiece W
In the case of, stop device.On the other hand, in the case where there is untreated workpiece W, it is back to step S1.
Fig. 4 is the curve map for representing to be formed at the reflectivity of the aluminium on the workpiece W of makrolon surface.It is horizontal in the figure
Axle represents wavelength [nm], and the longitudinal axis represents reflectivity [%].In addition, in the figure, symbol A is represented in oven 63 without heating
Situation, symbol B represents that workpiece W is heated to 40 degree Celsius of situation in oven 63, and symbol C is represented in oven 63
Workpiece W is heated to 60 degree Celsius of situation, symbol D represents that workpiece W is heated to 80 degree Celsius of situation in oven 63.
As shown in the drawing, in the case where being heated to workpiece W, aluminium film can be made to maintain high reflectivity.Work
Part W heating-up temperature is higher, and the effect is more significant.On the other hand, in the case where not heated to workpiece W, aluminium film
Reflectivity, especially in the obvious step-down of short wavelength side.
Fig. 5 is the curve map for representing to be formed at the reflectivity of the aluminium on the workpiece W of methacrylic resin surface.The figure
In, transverse axis also illustrates that wavelength [nm], and the longitudinal axis also illustrates that reflectivity [%].In addition, in the figure, symbol A is also illustrated in oven 63
In without heating situation, symbol B is also illustrated in oven 63 and workpiece W is heated to 40 degree Celsius of situation, symbol C
Workpiece W is heated to 60 degree Celsius of situation by expression in oven 63, and symbol D, which is also illustrated in oven 63, adds workpiece W
The situation of heat to 80 degree Celsius.
As illustrated, use methacrylic resin as workpiece W material when, also heated to workpiece W
In the case of, aluminium film can be made to maintain high reflectance.Workpiece W heating-up temperature is higher, and the effect is more significant.But, adding
When hot temperature is 60 degree Celsius and 80 degree Celsius, the reflectivity is reversed.Speculate that its reason is：By methacrylic resin
In the case of being heated to softening temperature nearby, workpiece W surface becomes coarse.On the other hand, workpiece W is not being heated
In the case of, the reflectivity of aluminium film, especially in the obvious step-down of short wavelength side.
Then, another embodiment of the present invention is illustrated.Fig. 6 be represent the present invention the 2nd embodiment into
The flow chart of film method.
In 2nd embodiment, when performing film forming action using film formation device, the workpiece W through ejection formation is transported
Heated (step S21) to oven 63, and to workpiece W.Heating-up temperature now and heat time and the 1st embodiment party
Formula is same.Thus, moisture can be prevented to the condensation on workpiece W surface in the same manner as the 1st embodiment, and can go
Except the moisture on the surface for being attached to workpiece W.
If workpiece W heating terminates, the workpiece W after heating is transported to workpiece introduction part 62 from oven 63.Then,
The workpiece W is moved into film forming chamber 10 (step S22) from workpiece introduction part 62.Should be from oven 63 to 10 pairs of film forming chamber
The conveyance that workpiece W is carried out is identical with the 1st embodiment, is preferably to be performed within the time that workpiece W does not turn cold substantially.Therefore,
Need immediately to transport to film forming chamber 10 from the workpiece W that oven 63 takes out of.
Low vacuum (step S23) of 0.1 Pascal to 1 Pascal or so will be decompressed in film forming chamber 10.In the decompression
When, condensing and the attachment to workpiece W surface for the moisture in film forming chamber 10 is produced because of heat-insulated cooling effect.Especially, in order to
Perform processing at high speed such as the film formation device of the present invention, and need rapidly to being depressurized in chamber, but in this case, become
Obtain the condensation and the attachment to workpiece W surface of the moisture easily produced in chamber.However, in a same manner as in the first embodiment, workpiece
W is pre-heated to the temperature below the softening point of resin, so moisture can be prevented to the condensation on workpiece W surface.
If through decompression in film forming chamber 10, by opening open and close valve 31, and using for example, non-reactive gas as
The argon gas of inert gas is supplied to film forming chamber 10 from the supply unit 33 of non-reactive gas, and with true in film forming chamber 10
Reciprocal of duty cycle turns into the mode of the Pascal of 0.5 Pascal~3, makes in film forming chamber 10 to be full of (step S24) by argon gas.
As the non-reactive gas, using in corona treatment will not because of reaction workpiece W Surface Creation
Film person.As the non-reactive gas, can as described above as using argon gas, nitrogen, oxygen etc..
Then, corona treatment (step S25) is performed.When performing corona treatment, via matching box 46 from height
The plasma electrode 24 of frequency power 45 assigns high frequency voltage.Thus, perform using non-reactive gas as discharge gas etc.
Gas ions processing.By the corona treatment, and effectively remove the micro water on the surface for remaining in resinous workpiece W
Point.
Then, sputter process (step S26) is performed.Later process is quoted and said due to identical with the 1st embodiment
It is bright.
Fig. 7 and Fig. 8 are the curve maps for representing to be formed at the reflectivity of the aluminium on the workpiece W of makrolon surface.The figure
In, transverse axis represents wavelength [nm], and the longitudinal axis represents reflectivity [%].Furthermore, Fig. 7 represents to repeat for a long time illustrated before
The situation into film process of 1st embodiment, Fig. 8 represent to repeat for a long time the 2nd embodiment into film process
Situation.
, can by the temperature being heated to resinous workpiece W below softening temperature according to the 1st embodiment
Moisture is prevented to the condensation on workpiece W surface, and can remove the moisture on the surface for being attached to workpiece W, so can improve
Utilize the reflectivity of metallic film formed by sputtering.However, in the case where continuously performing into film process, moisture can be accumulated in
In film forming chamber 10, the moisture becomes easily to be attached to workpiece W surface.
In contrast, in the case where performing corona treatment before sputter process such as the 2nd embodiment, can
Effectively remove the moisture on the surface for remaining in workpiece W.Therefore, formed as shown in figure 8, can further improve using sputtering
Metallic film reflectivity.
Furthermore, in said embodiment, to applying the present invention to continuously perform utilization in same film forming chamber 10
The film forming of sputtering and the situation of the film formation device of the film forming using plasma CVD are illustrated, but can also answer the present invention
Film formation device for only performing the film forming using sputtering.In 2nd embodiment, by being heated and being carried out to workpiece etc.
Gas ions processing, and the moisture for being attached to workpiece is removed, but workpiece can not also be heated and only carry out corona treatment
Make a return journey moisture removal.
Claims (9)
1. a kind of film build method, it is that it is special come the film build method of the film to resinous workpiece formation metal using sputtering
Levy and be, including：
Heating process, by the temperature below the softening temperature of the resinous workpiece heat to the resin for constituting the workpiece；
Process is moved into, the workpiece heated by the heating process is moved into chamber；
Process is depressurized, to being depressurized in the chamber；
Sputtering process, to comprising target material and the sputtering electrode that is disposed in the chamber applies voltage, and to heated
The workpiece is sputtered；And
Process is taken out of, the workpiece after the completion of film forming is taken out of out of described chamber.
2. film build method according to claim 1, it is characterised in that its decompression process and the sputtering process it
Between, further include：
Gas supply step, is provided gas tangentially in the chamber；And
Plasma treatment operation, high frequency voltage is applied to the plasma electrode being disposed in the chamber.
3. film build method according to claim 1 or 2, it is characterised in that：
In the decompression process, pressure of 0.1 Pascal less than 1.0 Pascals will be decompressed in the chamber, and
And
In the sputtering process, turn into every 1 square centimeter more than 25 watts with the surface area relative to the target material
Input power mode, to the sputtering electrode apply DC voltage.
4. film build method according to claim 1 or 2, it is characterised in that：
In the heating process, when constituting the softening temperature of resin of the workpiece and being spent for T Celsius, with T/2 degree Celsius with
Scope below T degree upper and Celsius is heated to the workpiece.
5. film build method according to claim 1 or 2, it is characterised in that：
In the heating process, by the workpiece heat to more than 40 degree Celsius.
6. film build method according to claim 1 or 2, it is characterised in that：
The resin for constituting the workpiece is makrolon.
7. a kind of film build method, it is that it is special come the film build method of the film to resinous workpiece formation metal using sputtering
Levy and be, including：
Process is moved into, the workpiece is moved into chamber；
Process is depressurized, to being depressurized in the chamber；
Sputtering process, to comprising target material and the sputtering electrode that is disposed in the chamber applies voltage；And
Process is taken out of, the workpiece after the completion of film forming is taken out of out of described chamber；And
Further included between the decompression process and the sputtering process：
Gas supply step, is provided gas tangentially in the chamber；And
Plasma treatment operation, high frequency voltage is applied to the plasma electrode being disposed in the chamber.
8. a kind of film formation device, it is that it is special come the film formation device of the film to resinous workpiece formation metal using sputtering
Levy and be, possess：
Heating part, by the temperature below the softening temperature of the workpiece heat to the resin for constituting the workpiece；
Chamber, stores the workpiece heated by the heating part；
Sputtering electrode, comprising target material, and is disposed in the chamber；And
Power supply, applies voltage to the sputtering electrode and the heated workpiece is sputtered.
9. film formation device according to claim 8, it is characterised in that it is more standby：
Gas supply part, is provided gas tangentially in the chamber；
Plasma electrode, is disposed in the chamber；And
High frequency electric source, to the plasma electrode apply high frequency voltage and to sputtering before the workpiece progress plasma
Body processing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015212521A JP6555078B2 (en) | 2015-10-29 | 2015-10-29 | Deposition method |
| JP2015-212521 | 2015-10-29 |
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| JP (1) | JP6555078B2 (en) |
| CN (1) | CN106978582A (en) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111771426A (en) * | 2018-02-27 | 2020-10-13 | 夏普株式会社 | Method and apparatus for manufacturing display device |
| CN113265626A (en) * | 2020-02-14 | 2021-08-17 | 芝浦机械电子装置株式会社 | Film forming apparatus and method for removing moisture in film forming apparatus |
| US12043898B2 (en) | 2020-02-14 | 2024-07-23 | Shibaura Mechatronics Corporation | Film formation apparatus and moisture removal method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7451436B2 (en) | 2020-02-14 | 2024-03-18 | 芝浦メカトロニクス株式会社 | Film deposition equipment and method for removing moisture from film deposition equipment |
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| CN113265626A (en) * | 2020-02-14 | 2021-08-17 | 芝浦机械电子装置株式会社 | Film forming apparatus and method for removing moisture in film forming apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI615489B (en) | 2018-02-21 |
| JP2017082291A (en) | 2017-05-18 |
| JP6555078B2 (en) | 2019-08-07 |
| TW201716605A (en) | 2017-05-16 |
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Application publication date: 20170725 |