CN106961563B - Low-noise wide-dynamic-range image sensor related multi-sampling circuit - Google Patents

Low-noise wide-dynamic-range image sensor related multi-sampling circuit Download PDF

Info

Publication number
CN106961563B
CN106961563B CN201710180039.XA CN201710180039A CN106961563B CN 106961563 B CN106961563 B CN 106961563B CN 201710180039 A CN201710180039 A CN 201710180039A CN 106961563 B CN106961563 B CN 106961563B
Authority
CN
China
Prior art keywords
integration
result
analog
output
integrator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710180039.XA
Other languages
Chinese (zh)
Other versions
CN106961563A (en
Inventor
刘洋
郭杨钰
王欣洋
马成
李杨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Changguang Chenxin Microelectronics Co.,Ltd.
Original Assignee
Changchun Changguangchenxin Optoelectronics Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changchun Changguangchenxin Optoelectronics Technology Co ltd filed Critical Changchun Changguangchenxin Optoelectronics Technology Co ltd
Priority to CN201710180039.XA priority Critical patent/CN106961563B/en
Publication of CN106961563A publication Critical patent/CN106961563A/en
Application granted granted Critical
Publication of CN106961563B publication Critical patent/CN106961563B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

The invention relates to a low-noise wide-dynamic-range image sensor correlation multi-sampling circuit, wherein an integrator integrates pixel signals output by a pixel output buffer; when the integration result is smaller than the set voltage threshold value, the integration control unit controls the integrator to perform integration of the next cycle, otherwise, the integration control unit controls the read control switch to be closed so that the final integration result is output to the analog-to-digital conversion unit, and the integration times are output to the data processing unit; the analog-to-digital conversion unit converts the final integral result into quantization result data and transmits the quantization result data to the data processing unit; and the data processing unit divides the quantized result data by the integration times to obtain the final sampling result data. The invention can carry out integration for different times aiming at different pixel outputs, achieves the purposes of integrating small signals for multiple times and integrating large signals appropriately, and can simultaneously realize low noise and wide dynamic range of the image sensor.

Description

Low-noise wide-dynamic-range image sensor related multi-sampling circuit
Technical Field
The invention belongs to the technical field of semiconductor image sensing, and relates to a circuit for realizing a low-noise wide-dynamic-range image sensor by adopting a correlated multi-sampling technology.
Background
The noise of the sensor can be reduced by the related multiple sampling technology. A typical correlated multiple sampling circuit is shown in fig. 1a, and comprises an integrator and a readout control switch S5, wherein the integrator is composed of an amplifier AMP1, a sampling capacitor C1, a feedback capacitor C2, and four switches S0, S1, S2, S3, and S4; the circuit first resets the C2 and circuit by closing switch S0. Then switch S0 is opened and switches S1 and S3 are closed, as shown in fig. 1 b; after the signal at C1 stabilizes, switches S1 and S3 are opened to sample the pixel signal onto capacitor C1. The switches S2 and S4 are then closed, as shown in fig. 1C, transferring the signal charge to the capacitor C2. By repeating the loop of the phases described in fig. 1b and 1c, the noise on the pixel output buffer can be integrated, and since the uncorrelated noise is averaged after the integration, the equivalent input noise on Vpix (pixel signal) is reduced. The disadvantage is that the effective swing of Vpix decreases with increasing integration times, resulting in a decrease of the overall dynamic range of the sensor.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a low-noise wide-dynamic-range image sensor related multi-sampling circuit, which can keep the output of a pixel unchanged and reduce the equivalent input noise of the pixel, thereby realizing the low noise and wide dynamic range of the image sensor at the same time.
In order to solve the technical problem, the low-noise wide-dynamic-range image sensor correlation multi-sampling circuit comprises an integrator, an integration control unit, a reading control switch, an analog-to-digital conversion unit and a data processing unit; the integrator receives the pixel signal output by the pixel output buffer and integrates the pixel signal; the integration control unit acquires an integration result output by each cycle of integrator, outputs a signal to control the integrator to perform integration of the next cycle when the integration result is smaller than a set voltage threshold, outputs a signal to control the read control switch to be closed when the integration result is larger than or equal to the set voltage threshold so that a final integration result is output to the analog-digital conversion unit, and simultaneously outputs the integration times to the data processing unit; the analog-to-digital conversion unit converts the final integral result into quantization result data and transmits the quantization result data to the data processing unit; and the data processing unit divides the quantized result data by the integration times to obtain the final sampling result data.
The integration control unit comprises a logic circuit and an analog comparator; the analog comparator compares the integration result output by each cycle integrator with a set voltage threshold value and outputs the comparison result to the logic circuit, when the integration result is smaller than the set voltage threshold value, the logic circuit outputs a signal to control the integrator to perform integration of the next cycle, and when the integration result is larger than the set voltage threshold value, the logic circuit outputs a signal to control the read control switch to be closed so that the final integration result is output to the analog-to-digital conversion unit, and meanwhile, the integration times are output to the analog-to-digital conversion unit.
The integral control unit comprises a logic circuit, an analog-to-digital conversion circuit and a digital comparator; the analog-to-digital conversion circuit converts an integration result output by the integrator into a digital signal and outputs the digital signal to the digital comparator; the digital comparator compares the digital signal with a set voltage threshold value and outputs the comparison result to the logic circuit, when the digital signal is smaller than the set voltage threshold value, the logic circuit outputs a signal to control the integrator to perform integration of the next cycle, when the digital signal is larger than the set voltage threshold value, the logic circuit outputs a signal to control the read control switch to be closed so that the final integration result is output to the analog-to-digital conversion unit, and meanwhile, the integration times are output to the analog-to-digital conversion unit.
The invention is invented aiming at the special mechanism of the noise of the image sensor. The total noise of the image sensor has the following characteristics: when the number of photons input to the pixel is small, the total equivalent input noise of the sensor is determined by the readout circuit noise of the pixel, so that the circuit noise needs to be reduced by a noise reduction technology of multiple correlated sampling; when the number of photons input to the pixel is large, the total equivalent input noise of the sensor is determined by the number of photons (shot noise of photons), and the noise of the circuit can be ignored, so that the noise of the readout circuit is reduced without a related multi-sampling circuit. The present invention determines whether to continue executing the integration cycle by monitoring the results of the integrator. Therefore, integration of different times can be carried out aiming at different pixel outputs, and the purposes of integrating small signals for multiple times and integrating large signals appropriately are achieved. The invention can keep the output of the pixel unchanged and reduce the equivalent input noise of the pixel, thereby simultaneously realizing low noise and wide dynamic range of the image sensor.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1a is a schematic diagram of a related art multiple sampling circuit; fig. 1b and fig. 1c are schematic diagrams of two working phases of a related multiple sampling circuit in the prior art.
Fig. 2 is a schematic diagram of the structure of the low-noise wide-dynamic-range image sensor correlated multi-sampling circuit of the present invention.
Fig. 3 is a schematic structural view of embodiment 1 of the present invention.
Fig. 4 is a schematic structural diagram of embodiment 2 of the present invention.
Detailed Description
Example 1
As shown in fig. 2 and 3, the low-noise wide-dynamic-range image sensor correlation multi-sampling circuit of the present invention includes an integrator, an integration control unit, a readout control switch, an analog-to-digital conversion unit, and a data processing unit; the integral control unit comprises a logic circuit and an analog comparator.
The integrator receives and integrates the pixel signal Vpix output by the pixel output buffer; the analog comparator integrates the integration result V output by the integrator in each cycleiAnd a set voltage threshold value V0Making a comparison when ViLess than V0When the voltage is lower than the reference voltage, the logic circuit outputs a signal to control the integrator to perform integration in the next cycle when the voltage is lower than the reference voltageiGreater than or equal to V0When the current time is longer than the preset time, the logic circuit outputs a signal to control the read control switch S5 to be closed so that the final integration result is transmitted to the analog-digital conversion unit, i at the moment is equal to the integration frequency K, and the integration frequency K is transmitted to the data processing unit; the analog-to-digital conversion unit converts the final integral result into quantization result data A and then transmits the quantization result data A to the data processing unit; the data processing unit divides the quantization result data A by the number of integration times to obtain final sampling result data Y.
Example 2
As shown in fig. 2 and 4, the low-noise wide-dynamic-range image sensor correlation multi-sampling circuit of the present invention includes an integrator, an integration control unit, a readout control switch, an analog-to-digital conversion unit, and a data processing unit; the integration control unit comprises a logic circuit, an analog-to-digital conversion circuit and a digital comparator.
The integrator receives and integrates the pixel signal Vpix output by the pixel output buffer; the analog-to-digital conversion circuit converts the integration result output by the integrator into a digital signal Vi' then output to the digital comparator; a digital comparator compares Vi' with a set voltage threshold V0Making a comparison when Vi' less than or equal to V0Time, logic circuitThe output signal controls the integrator to integrate in the next cycle when ViGreater than or equal to V0When the current time is longer than the preset time, the logic circuit outputs a signal to control the read control switch S5 to be closed so that the final integration result is transmitted to the analog-digital conversion unit, i at the moment is equal to the integration frequency K, and the integration frequency K is transmitted to the data processing unit; the analog-to-digital conversion unit converts the final integral result into quantization result data A and then transmits the quantization result data A to the data processing unit; the data processing unit divides the quantization result data A by the number of integration times to obtain final sampling result data Y.
Setting the bit width of K as N-bit, and the bit width of the quantization result data A of the analog-to-digital conversion unit as M-bit ADC, after data processing, the quantization precision of the final result is 1L SB (the minimum quantization step of the M-bit ADC) divided by K (K is maximally equal to 2)N) Therefore, the minimum quantization step is 1L SB/(2)N) Therefore, the total bit width is (M + N) bit.

Claims (3)

1. A low-noise wide-dynamic-range image sensor correlation multi-sampling circuit comprises an integrator and a reading control switch; the pixel integration circuit is characterized by also comprising an integration control unit, an analog-to-digital conversion unit and a data processing unit, wherein the integrator receives and integrates pixel signals output by the pixel output buffer; the integration control unit acquires an integration result output by each cycle of integrator, outputs a signal to control the integrator to perform integration of the next cycle when the integration result is smaller than a set voltage threshold, outputs a signal to control the read control switch to be closed when the integration result is larger than or equal to the set voltage threshold so that a final integration result is output to the analog-digital conversion unit, and simultaneously outputs the integration times to the data processing unit; the analog-to-digital conversion unit converts the final integral result into quantization result data and transmits the quantization result data to the data processing unit; and the data processing unit divides the quantized result data by the integration times to obtain the final sampling result data.
2. The low noise wide dynamic range image sensor correlated multiple sampling circuit of claim 1, wherein said integral control unit comprises a logic circuit and an analog comparator; the analog comparator compares the integration result output by each cycle integrator with a set voltage threshold value and outputs the comparison result to the logic circuit, when the integration result is smaller than the set voltage threshold value, the logic circuit outputs a signal to control the integrator to perform integration of the next cycle, and when the integration result is larger than the set voltage threshold value, the logic circuit outputs a signal to control the read control switch to be closed so that the final integration result is output to the analog-to-digital conversion unit, and meanwhile, the integration times are output to the analog-to-digital conversion unit.
3. The low noise wide dynamic range image sensor correlated multiple sampling circuit of claim 1, wherein said integral control unit comprises a logic circuit, an analog-to-digital conversion circuit, a digital comparator; the analog-to-digital conversion circuit converts an integration result output by the integrator into a digital signal and outputs the digital signal to the digital comparator; the digital comparator compares the digital signal with a set voltage threshold value and outputs the comparison result to the logic circuit, when the digital signal is smaller than the set voltage threshold value, the logic circuit outputs a signal to control the integrator to perform integration of the next cycle, when the digital signal is larger than the set voltage threshold value, the logic circuit outputs a signal to control the read control switch to be closed so that the final integration result is output to the analog-to-digital conversion unit, and meanwhile, the integration times are output to the analog-to-digital conversion unit.
CN201710180039.XA 2017-03-24 2017-03-24 Low-noise wide-dynamic-range image sensor related multi-sampling circuit Active CN106961563B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710180039.XA CN106961563B (en) 2017-03-24 2017-03-24 Low-noise wide-dynamic-range image sensor related multi-sampling circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710180039.XA CN106961563B (en) 2017-03-24 2017-03-24 Low-noise wide-dynamic-range image sensor related multi-sampling circuit

Publications (2)

Publication Number Publication Date
CN106961563A CN106961563A (en) 2017-07-18
CN106961563B true CN106961563B (en) 2020-07-28

Family

ID=59470319

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710180039.XA Active CN106961563B (en) 2017-03-24 2017-03-24 Low-noise wide-dynamic-range image sensor related multi-sampling circuit

Country Status (1)

Country Link
CN (1) CN106961563B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019075749A1 (en) * 2017-10-20 2019-04-25 深圳市汇顶科技股份有限公司 Analog read circuit and image sensing module
CN209285376U (en) * 2018-09-05 2019-08-23 江苏美的清洁电器股份有限公司 A kind of signal processing circuit and device, dust catcher
CN111093043B (en) * 2018-10-24 2021-10-22 宁波飞芯电子科技有限公司 Radiation receiving system and method and sensing array
CN112449125B (en) * 2019-08-29 2022-06-17 天津大学青岛海洋技术研究院 Image sensor reading circuit based on self-adaptive threshold adjustment

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993016552A1 (en) * 1992-02-06 1993-08-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Multiple-sampling process
EP1237357A3 (en) * 2001-03-02 2003-12-10 LENZ, Reimar Digital camera with improved dynamic using CMOS image sensor and method for driving the CMOS image sensor
JP2004032212A (en) * 2002-06-24 2004-01-29 Nippon Hoso Kyokai <Nhk> Imaging device
WO2011119466A3 (en) * 2010-03-22 2011-11-17 Hologic Inc. Decorrelated channel sampling for digital imaging
JP2013098598A (en) * 2011-10-28 2013-05-20 Konica Minolta Advanced Layers Inc Imaging apparatus
CN105323504A (en) * 2014-07-11 2016-02-10 株式会社东芝 Solid-state image pickup device and method of controlling solid-state image pickup device
JP2016042650A (en) * 2014-08-18 2016-03-31 ソニー株式会社 Semiconductor photodetector, radiation counter and control method of semiconductor photodetector
CN105635606A (en) * 2014-11-26 2016-06-01 全视科技有限公司 Method and system for implementing correlated multi-sampling with improved analog-to-digital converter linearity
CN106101585A (en) * 2016-07-27 2016-11-09 中国科学院西安光学精密机械研究所 A kind of low noise CCD camera circuitry

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015023391A (en) * 2013-07-18 2015-02-02 株式会社ニコン Solid-state image pickup device
KR102075093B1 (en) * 2013-08-14 2020-03-03 삼성전자주식회사 Image sensor and analog to digital converter and analog to digital converting method tererof
US20150268360A1 (en) * 2014-03-20 2015-09-24 Texas Instruments Incorporated Multi-sampling in x-ray receiver for noise reduction
FR3023653B1 (en) * 2014-07-09 2017-11-24 Commissariat Energie Atomique CMOS MULTI-SAMPLING SENSOR CORREL

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993016552A1 (en) * 1992-02-06 1993-08-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Multiple-sampling process
EP1237357A3 (en) * 2001-03-02 2003-12-10 LENZ, Reimar Digital camera with improved dynamic using CMOS image sensor and method for driving the CMOS image sensor
JP2004032212A (en) * 2002-06-24 2004-01-29 Nippon Hoso Kyokai <Nhk> Imaging device
WO2011119466A3 (en) * 2010-03-22 2011-11-17 Hologic Inc. Decorrelated channel sampling for digital imaging
JP2013098598A (en) * 2011-10-28 2013-05-20 Konica Minolta Advanced Layers Inc Imaging apparatus
CN105323504A (en) * 2014-07-11 2016-02-10 株式会社东芝 Solid-state image pickup device and method of controlling solid-state image pickup device
JP2016042650A (en) * 2014-08-18 2016-03-31 ソニー株式会社 Semiconductor photodetector, radiation counter and control method of semiconductor photodetector
CN105635606A (en) * 2014-11-26 2016-06-01 全视科技有限公司 Method and system for implementing correlated multi-sampling with improved analog-to-digital converter linearity
CN106101585A (en) * 2016-07-27 2016-11-09 中国科学院西安光学精密机械研究所 A kind of low noise CCD camera circuitry

Also Published As

Publication number Publication date
CN106961563A (en) 2017-07-18

Similar Documents

Publication Publication Date Title
CN106961563B (en) Low-noise wide-dynamic-range image sensor related multi-sampling circuit
CN106470322B (en) Readout circuit for reducing column fixed pattern noise of image sensor
KR102205702B1 (en) Image sensor and method of driving image sensor, and image capturing apparatus using the same
CN211152057U (en) Data converter
CN110351500B (en) CMOS image sensor reading circuit compatible with two exposure modes
US10681297B2 (en) Single-slope comparison device with low-noise, and analog-to-digital conversion device and CMOS image sensor including the same
KR101934260B1 (en) A image sensor
US10326957B2 (en) A/D converter and sensor device using the same
Posch et al. High-DR frame-free PWM imaging with asynchronous AER intensity encoding and focal-plane temporal redundancy suppression
KR20190020408A (en) Two-step single-slope comparator with high linearity and cmos image sensor thereof
Zhong et al. A fully dynamic multi-mode CMOS vision sensor with mixed-signal cooperative motion sensing and object segmentation for adaptive edge computing
CN107396009B (en) Pulse frequency modulation type image sensor circuit and processing method thereof
KR20130015162A (en) Ananlog digital converter, image sensor comprising this, and apparatus comprising the image sensor
US10498992B2 (en) Single-slope comparison device with low-noise, and analog-to-digital conversion device and CMOS image sensor including the same
KR20140146864A (en) Programmable gain amplifier and devices having the same
KR20190021664A (en) Two-step single-slope comparator with high-resolution and high-speed, and cmos image sensor thereof
KR20170124668A (en) Comparator and operating method, and cmos image sensor thereof using that
CN111385502A (en) Fast correlation multi-sampling method combined with two-step ADC
CN114402531A (en) Fast multisampling in image sensors
KR102514432B1 (en) Comparator and operating method, and cmos image sensor thereof using that
US20100225509A1 (en) Analog-digital converter with pipeline architecture associated with a programmable gain amplifier
US9961288B2 (en) Image sensor and imaging device comprising oversampling AD converter and recursive AD converter
CN106998433A (en) Related multiple repairing weld method and circuit for wide dynamic range imaging sensor
US10594333B1 (en) Analog-to-digital conversion circuit and image sensor including the same
KR101241501B1 (en) Converter circuit and method of driving thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CB03 Change of inventor or designer information

Inventor after: Liu Yang

Inventor after: Guo Yangyu

Inventor after: Wang Xinyang

Inventor after: Ma Cheng

Inventor after: Li Yang

Inventor before: Liu Yang

Inventor before: Guo Yangyu

Inventor before: Wang Xinyang

Inventor before: Ma Cheng

Inventor before: Li Yang

CB03 Change of inventor or designer information
CP03 Change of name, title or address

Address after: Office Buildings 1 and 5, Phase I, Optoelectronic Information Industry Park, No. 7691 Ziyou Road, Changchun Economic and Technological Development Zone, Jilin Province, 130000

Patentee after: Changchun Changguang Chenxin Microelectronics Co.,Ltd.

Address before: No. 588, Yingkou Road, Jingkai District, Changchun City, Jilin Province, 130033

Patentee before: Changchun Changguangchenxin Optoelectronics Technology Co.,Ltd.

CP03 Change of name, title or address